SiPMs: parameters and applications
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1 SiPMs: parameters and applications Elena Popova Moscow Engineering and Physics Institute Международный Байкальский семинар по космомикрофизике июля 212
2 Outline What is it SiPM? SiPM s main parameters Parameters sensitivity Manufacturers and experiments Electronics Summary Elena Popova, MEPhI Baikal July 212 2
3 Silicon Photomultiplier (SiPM) Around 199 the initial prototypes of SiPM (MRS Metal- Resistor Semiconductor APD s) were invented in Russia (V.Golovin,Z.Sadygov,N.Yusipov(Russian patent#172831, from1/11/1989) They had : Too difficult and unreproducible technology Too low light detection efficiency (of about 1%) Unclear operational principle But nevertheless they look very promising detectors for Experimental Physics! Elena Popova, MEPhI Baikal July 212 3
4 Homage of Boris Dolgoshein (193-21) Professor MEPHI Head of the particle-physics department of MEPHI Inventor of streamer chamber (1962) Developer and pioneer of Transition Radiation Detector (TRD) prof.dolgoshein started to develop novel photodetecrors which he called Silicon Photomultipliers (SiPM) since 1993 Elena Popova, MEPhI Baikal July 212 4
5 Silicon Photomultiplier (SiPM) pixel The novel type of photon s detector Multipixel device with common readout h Scope signal Amplitude spectrum 1 pe 1 pe 8 R 5 2 pe Counts 6 substrate 3 pe 4 4 pe 2 U 6V C hannel Each pixel p-n-junction in selfquenching Geiger mode Pixels number: 1 1/mm2 All pixels are equal Pixels are independent from each other Signal is sum of all fired pixels Elena Popova, MEPhI Baikal July 212 Pixel signal - or 1 5 But SiPM is analogue device
6 Silicon Photomultiplier (SiPM) low intensity light Response function for SiPMs with different pixel numbers light dark light and dark signals are identical more intensive light Number of pixels fired Number of photoelectrons light dark N firedcells N total 1 e N photon N total PDE Response function depends on total number of pixels inside SiPM Elena Popova, MEPhI Baikal July Saturation correction is possible
7 Main SiPM s parameters Events Events Light <N pixel > =1 3 Dark <N pixel >=.3 Photon Detection Efficiency PDE Gain G Crosstalk xt Dark rate f QDC channel Intrinsic jitter t SiPM s single pixel spectra is very useful thing for precise measurements! There are allow us to determine all main SiPM parameters. Quite important PDE, gain and xt are measured independently Elena Popova, MEPhI Baikal July 212 7
8 Main SiPM s parameters. Gain vs Voltage for different T 18 Events Events Light <N fired pixel > = Gain 1 Dark <N fired pixel >=.3 Pixel gain T = +2 U bd =34,15 T = +15 U bd =34,4 T = +1 U bd =33,91 T = +5 U bd =33,79 T = U bd =33,65 T = -5 U bd =33,49 T = -1 U bd =33,36 T = -2 U bd =33,8 T = -3 U bd =32,81 T = -4 U bd =32,53 T = -5 U bd =32,26 T = -6 U bd =31,98 T = -7 U bd =31,71 T = -8 U bd =31,43 G C pixel QDC channel (U - U q breakdown We need to collect SiPM s spectra for different voltages ) 32,5 35, 37,5 4, Bias voltage U, V U breakdown G= Overvoltage U=U-U breakdown With temperature decreasing U breakdown decreases too temperature sensitivity Ubreakdown and U are needed for different type SiPM comparison Elena Popova, MEPhI Baikal July 212 8
9 Events Events P(o) Main SiPM s parameters. PDE QDC channel Light <N pixel > =1 Dark <N pixel >=.3 PDE N fired_pixel N photons <N photons > - we need a calibrated photodetector For <N fired_pixel > assume Poisson distribution of photons: P( n, ) n e n! We can find <N pixel > from zero peak N probability: P (, N ) e pixel Imoprtant no signal, no crosstalk!!! pixel It means that true number of initially fired pixels from light pulse which is free from crosstalk and afterpulsing can be determined as: N fired _ pixel S ln( S ped _ light total _ light S ) ln( S ped _ dark total _ dark P.Eckert, et al. Characterisation studies of silicon photomultipliers. Nucl. Instr. Meth. Phys. Res. A62 (29), Elena Popova, MEPhI Baikal July )
10 Main SiPM s parameters. PDE Spectral PDE for latest MEPhI/MPI SiPM produced in cooperation with Excelitas 1 micron pixel size, geometrical efficiency 8% PDE, % =435 nm =595 nm PDE, % Comparison with reference XP22 (error=17%) at MEPHI PIN 1x1 at MEPhI (error=7%) at MEPHI PIN 18x18 at MPI (error=15%) at MPI PDE for U=38V (U=4,7V) Overvoltage U, V Wavelength, nm Elena Popova, MEPhI Baikal July 212 1
11 Main SiPM s parameters. Dark rate SiPM 1x1 mm 2, 1 3 pixels From dark spectrum on the base of Poisson distribution: dark rate f= <n dark >/T, where T integration time Dark rate, MHz / mm 2 1,1,1 T=+2,7 C (U bd =6,27) T=+9,9 C (U bd =59,81) T=-6,4 C (U bd =58,82) T=-21,6 C (U bd =58,2) T=-36,5 C (U bd =57,15) T=-5 C (U bd =56,23) 1E Overvoltage U, V,,5 1, 1,5 2, 2,5 3, DR typically mm -2 (room T) Gain, 1 6 Cooling helps(-5 C) DR increases with overvoltage(tunneling)->deep cooling may not help! Elena Popova, MEPhI Baikal July
12 Main SiPM s parameters. Crosstalk Elena Popova, MEPhI Baikal July
13 Events Main SiPM s parameters. Crosstalk Xt and light signal n o x t s u p p re ssio n U = 6 4,7 V U b d = 6,7 4 G a in =,8 *1 7 N p ixe l = 4, Xt and dark rate MEPhI/MPI T = -61 C no OC suppression with OC suppression Poisson Q D C c h a n. w ith x t su p p res sio n U = 3 5,5 V U b d = 3 1,5 G a in = 1,6 2 *1 7 Dark count, Hz Events 2 N pix el = 4, P. Buzhan et al. / NIM A 61 (29) Q D C c h an. (IMAGING21 Stockholm, Sweden June 8 11, 21 B.Dolgoshein Silicon Photomultiplier ) Threshould, pixels Main protection from crosstalk optical trenches between the SiPM pixels But only trenches are not enough! Elena Popova, MEPhI Baikal July
14 Main SiPM s parameters. Crosstalk Crosstalk from light spectra V.Balagura, et al. Study of Scintillator Strip with Wavelength Shifting Fiber and Silicon Photomultiplier. NIM A564 (26) S.Vinogradov et al."probability distribution and noise factor of solid state photomultiplier signals with cross-talk and afterpulsing ". Nuclear Science Symposium Conference Record (NSS/MIC), 29 IEEE Xt=N >1.5 /N >.5 crosstalk from dark rate P.Eckert, et al. Characterisation studies of silicon photomultipliers. NIM A62 (29), ,5,4 Crosstalk for latest MEPhI/MPI SiPM produced in cooperation with Excelitas and MPPC 1 micron pixel size, geometrical efficiency 8% Crosstalk xt,3,2,1 MPPC S C No354 3x3mm2 MPPC S U No.5 1x1mm2 SiPM 1B 3x3mm2 SiPM 1B 1x1mm2, Overvoltage U, V 6th NDIP 211 E. Popova et al. Large area UV SiPMs with extremely low cross-talk Elena Popova, MEPhI Baikal July
15 Count Main SiPM s parameters. Intrinsic jitter. 1x1mm 2 Laser in single photon mode 3x3mm2 Room temperature Temperature -4C x 1 m m p ix e ls (4 2 m ) F W H M = 1 4 p s events U=38 V FWHM = 25 ps T D C c h a n n e l ( 1 c h = 5 p s ) ps/ch Jitter vs light intensity. 35ps FWHM timing resolution was measured with1μm SPAD using single photons A.Gulinatti, P.Maccagnani, I.Rech, M.Ghioni and S.Cova ~ 1 N phe Elena Popova, MEPhI Baikal July
16 32 Voltage stability SiPM 1B for 5V (15%) overvoltage latest MEPhI/MPI SiPM produced in cooperation with Excelitas 16,12 12 Gain * Overvoltage (U), V Relative gain variation, %/1mV dg 2.% ( 5V ) GdU 1mV 6 crosstalk xt,1,8,6,4,2, Overvoltage, V dxt xtdu Relative xt variation, %/1mV 5.6% ( 5V ) 1mV PDE(435nm), % Relative pde variation, %/1mV d du.25% ( 5V ) 1mV 6th NDIP 211 E. Popova et al. Large area UV SiPMs with extremely low cross-talk Overvoltage, V Elena Popova, MEPhI Baikal July
17 Temperature stability SiPM 1B latest MEPhI/MPI SiPM produced in cooperation with Excelitas V=4V (12%) overvoltage for T=2ºC 33,6 2 4 Ubreakdown (V) 33,4 33,2 33, mV/ºC Pixel gain v a r =, 5 % / C 2 32, Temperature, C T e m p e r a tu r e T, C Number of pixels fired (595nm) 1,65 1,6 1,55 var =,2 % / C Crosstalk Elena Popova, MEPhI Baikal July , 5, 4, 3 var = 2,1 % / C, Tem perature T, C T em perature T, C 6th NDIP 211 E. Popova et al. Large area UV SiPMs with extremely low cross-talk
18 Elena Popova, MEPhI Baikal July
19 Elena Popova, MEPhI Baikal July
20 Physical HCAL Prototype Event reconstruction Data monitor Prototype has been successfully tested at DESY, CERN and FNAL during last years Elena Popova, MEPhI Baikal July 212 2
21 3x3 mm2 SiPM application for TOF TOF for MIP(3GeV electron beam, DESY) Sigma= =66ps Constant fraction discriminator SiPM: MIP signal is appr.1 mv w/o amplification Timing resolution between : PMT(FEU 187)+Cherenkov radiator and SiPM 3x3mm2+BC418 3x3x4 mm3 Results: - sigma(pmt+ch.rad)=48,5ps - sigma(electronics) =32ps Sigma(SiPM+BC418)=33ps Baikal July 212 Elena Popova, MEPhI 4th NDIP,Beaune-25 B. Dolgoshein, Large area SiPM s 21
22 SiPM s in space! International Space Station: launched by 15th of April,25 Space experiment LAZIO (MEPHI-INFN Collaboration) Latitude particle flux dependence Scientific goal:the measurement of low energy particle fluxes and radiation monitoring by apparatus,including sci tile+wls fiber+sipm hodoscope system Technological goal: test of SiPM s in space flight conditions 4th NDIP,Beaune-25 Elena Popova, MEPhI B. Dolgoshein, Large area SiPM s Baikal July
23 Cooled SiPM matrixes modules for astropartical applications Amplitude, V MEPhI/MPI SiPMs with area 5x5mm2 and FE electronics,1, -,1 5 Ohm FWHM=15ns -,2 -,3 -,4 -,5 Amplitude, V ,1,8 4 5 Time, ns ~ 7 Ohm +shaper FWHM=2,5ns,6,4,2, -,2 -, LIGHT27 Cooled SiPM matrixes module Elena october Popova, 27 MEPhIVI Int.Workshop Baikal July Time, ns 23
24 Excelitas tecnologies Almost ready for market! Final product in end of 212 Addressing the needs of molecular imaging and PET communities. Now Excelitas starts Cherenkov SiPM project Elena Popova, MEPhI Baikal July
25 Hamamatsu Photonics Most widely used SiPMs Large dynamic range Multichannels for tracker A lot of different modifications but No optical crosstalk protection Elena Popova, MEPhI Baikal July
26 FACT camera (First G-APD Cherenkov Telescope ) Hamamatsu MPPC Elena Popova, MEPhI Baikal July
27 Elena Popova, MEPhI Baikal July
28 RICH with multilayer aerogel radiator M.Barnyakov Budker Institute of Nuclear Physics, Novosibirsk Elena Popova, MEPhI Boreskov Institute Baikal of Catalysis, July 212 Novosibirsk 28 PhotoDet212
29 SiPM electronics Elena Popova, MEPhI Baikal July
30 SiPM electronics Elena Popova, MEPhI Baikal July 212 3
31 SiPM main features Sensitivity to single photons Possibility to measure light intensity Excellent amplitude resolution Negligible nuclear counting effect Immunity to magnetic fields up to 7 T Compactness Low weight Low power consumption (~5W) Low voltage supply (2-1V) Fast signal (~1 ns front) Simple FE electronics Room temperature operation Elena Popova, MEPhI Baikal July
32 Summary SiPMs are very promising, fast developing new solid state photodetectors Photon detection efficiency at the level of PMT and higher A lot of different variations concerned to SiPMs parameters and packages SiPMs are commersially available and used in real experiments Elena Popova, MEPhI Baikal July
33 Backup slides Elena Popova, MEPhI Baikal July
34 Elena Popova, MEPhI Baikal July
35 Crosstalk and Excess noise factor For light distributed according to Poisson law,5 1,6 1,5 Crosstalk xt,4,3,2 MPPC S C No354 3x3mm2 MPPC S U No.5 1x1mm2 SiPM 1B 3x3mm2 SiPM 1B 1x1mm2 ENF 1,4 1,3 1,2 MPPC S C No354 3x3mm2 MPPC S U No.5 1x1mm2 SiPM 1B 3x3mm2 SiPM 1B 1x1mm2,1 1,1, N ENF ( fired _ pixels out in / / Overvoltage U, V A A out in 2 ) Mean A 1e ENF N Overvoltage U, V Elena Popova, MEPhI Baikal July , Mean 2 ( ) exp er N 1 xt N initially fired pixels calculated from probability Xt crosstalk A 1e amplitude of single pixel N fired _ pixels
36 Elena Popova, MEPhI Baikal July
37 Elena Popova, MEPhI Baikal July
38 p-n-junction based detectors n E - + depletion region p Impact Ionization Avalanche multiplication Geiger discharge Geiger mode features R U Output signal doesn t depend from input Output signal value Q is determined by charge accumulated on pixel capacitance Q = C pixel (V- V breackdown ) Gain 1 PIN APD Geiger mode Breackdown Voltage U М= Q/е pixel gain М= Discharge duration of about 1 ns (selfquenching due to resistor) Elena Popova, MEPhI Baikal July Theoretical and experimental investigations from nineteen sixties
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