PRATHYUSHA INSTITUTE OF TECHNOLOGY AND MANAGEMENT
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1 PRATHYUSHA INSTITUTE OF TECHNOLOGY AND MANAGEMENT DEPARTMENT OF INFORMATION TECHNOLOGY Staff Name: Prof. S. Athinarayanan UNIT IV PART A Branch: ECE / V Sem 1. Define Memory Access Time and Memory Cycle Time. Memory Access Time is the time interval between the initiation and completion of Read or Write Operation Memory Cycle Time is the minimum Time interval required between initiation of Two successive memory operation. 2. Define Latency and bandwidth. Latency is the time interval, it takes to transfer a word of data from the memory Bandwidth is the amount of bytes of data transferred in one second. 3. Compare Static RAM and Dynamic RAM. PARAMETER STATIC RAM DYNAMIC RAM 1. Cell Type Flip Flop Cell Capacitor Storage Cell 2. Speed Fast Slow 3. Refreshing Not Required Required 4. Density Less More 5. Cost More Less 4. What is the maximum size of the address space generated in a processor with has 32 bit address? The maximum size of the address space generated in a processor with has 32 bit address = 2 32 = 4 Giga Locations. 5. What will be the number of address and data lines required for a 512K X 8 memory system? No. of address lines = 19 No. of data lines = 8 EC2303 / Computer Architecture and Organization 1
2 6. How many 128 X 4 RAM memory chips are required to build RAM memory system of 1K bytes? Total No. of Chips = Total Memory Bits / Memory Bits per chip No. of Chips Required = (1024 X 8) / (128 X 4) = How many memory chips are required to construct 8M X 32 memory using 512K X 8 chip? No. of Memory Chips required = (8M X 32) / (512 X 8) = How many 128 X 8 RAM chips are needed to provide a memory capacity of 4K bytes? No. of Memory Chips required = (4096 X 8) / (128 X 8) = An application program in a computer with cache uses 1400 instruction fetch from cache and 100 from main memory. What is hit ratio? Hit Ratio = No. of Instruction fetch from cache / Total no. of instructions = 1400 / 1500 = % 10. Show how the virtual address translation divides the 32bit address with page size 16K. Page size = 16K No. of address bits = 14 No. of bits for page numbers = = 18 bits Page Number Page offset Explain the two possible address assignment for bytes with a word of 32bits. Big-endian: The lower address is assigned to the most significant part of the word. Little-endian: The Lower address is assigned to the least significant part of the word. Big-endian Arrangement Little-endian Arrangement Word address Byte address Word address Byte address k -4 2 k -4 2 k -3 2 k -2 2 k k -4 2 k -1 2 k -2 2 k -3 2 k -4 EC2303 / Computer Architecture and Organization 2
3 12. Consider a two level cache with access time 5 nsec and 80 nsec respectively. If the hit ratio are 95% and 75% respectively in the two caches and main memory access time is 250 nsec. What is the effective access time? Access Time = H1T1 + H2 (1 H1)T2 + (1 H1)(1 H2)T3 =.95(5) + (1 -.95).75 X 80 -> (1-.95) (1-.75)250 = = nsec 13. Define Locality of Reference. The locality of reference can be grouped into two types: i) Spatial locality ii) Instruction in close proximity to the recently executed instruction is likely to be executed soon Temporal locality Recently an executed instruction is likely to be executed again very soon. 14. What are the cache write protocols? Briefly explain. There are two types of cache write protocols i) Write Thru: ii) The Cache locations and the main memory location are updated simultaneously. Write Back: Here the cache location is updated and it is marked dirty. The main memory location is updated later when the block is marked dirty is to be removed from the cache to make room for a new block. 15. What are the cache mapping algorithms? 1. Direct Mapping 2. Associative Cache 3. Set Associative Cache 16. Give the expression for average access time for a memory system with cache. The effective access time T av = hc + (1 h)m where c be the access time to cache M be the access time of Main memory h be the hit ratio EC2303 / Computer Architecture and Organization 3
4 17. What are memory interleaving and its advantage? In Memory interleaving the successive address are located in successive modules. i.e. the low order address select the module, the high order address select the word within the block. This results in faster transfer of Block of Data. This method is called Interleaving. 18. Compute the number of external pins required for 1K X 1 memory chip. No. of external pins required = 15 (Address Lines 10, Data Line 1, Control Line 2[R/W & CS], power and ground 2) 19. Compare Static and CMOS RAM. Parameter Static (Pipolar) CMOS 1 Power dissipation More than CMOS Minimum 2 Speed Fast Slow compared to Pipolar 20. What is SIMM & DIMM? What are the advantages of SIMM & DIMM? SIMM Single Inline Memory Module DIMM Dual Inline Memory Module The memory chips are mounted on a small PCB which in turn plugs into socket on the mother board, such memory modules are called SIMM & DIMM SIMM uses 100 pin & DIMM uses 168 pin socket Advantages: Modules occupy less motherboard space allow easy upgradation allow each troubleshooting and maintenance 21. What are the programs included in IBM-PC BIOS chip? a. Boot loader b. BIOS (Basic Input & Output System) c. POST (Power On Self Test) EC2303 / Computer Architecture and Organization 4
5 22. Compare SRAM, DRAM and hard disk Technology with respect to Speed, Size and Cost. Comparison of SRAM, DRAM and Hard Disk Technology Technology Speed Size Cost SRAM Fast Memory Large memory impractical only small Costly due to 6Transistor cell DRAM Slow Compared To SRAM Moderately large memory can be built Cost less due to 1Transistor cell HARD DISK Much slower due to rotational access time A huge memory can be built Lower cost compared to semi conductor memory 23. Draw the memory hierarchy diagram. Memory Hierarchy EC2303 / Computer Architecture and Organization 5
6 24. Draw the SRAM & DRAM cell diagram. Bipolar Static RAM CMOS STATIC RAM Asynchronous Dynamic RAM (DRAM) EC2303 / Computer Architecture and Organization 6
7 25. What are Cache replacement algorithms? Cache Replacement Algorithms 1. first in first out 2. Least Recently used 3. Random Replacement 26. What is RAM & Serial Access Memory? In Random Access Memory (RAM) any location can be accessed for a Read or Write operation in some fixed time that is independent of location s address. In Serial Access Memory the access time depends on the address or position of the data. EC2303 / Computer Architecture and Organization 7
8 PART B 1. Explain the connection between memory and the processor with suitable diagram. Connection of the memory to processor - Data transfer between the memory and the processor takes place through memory address register (MAR) and memory data Register (MDR) - If k be the number address bits, MAR is k bits long. - If n is the number of data bits, MDR is n bits long. - The memory unit may contain upto to 2 K locations - During the memory cycle, n bits of data are transferred between the memory and the processor - The transfer takes place over the processor bus which has o k address lines o n data lines o Control lines (R/W, MFC, etc) 2. Briefly explain memory read, memory write and Block Transfer. Memory Read: Memory Read operation is performed by the processor (1) by loading the address in MAR (2) Set R/W to 1. Memory responds by placing the data from the addressed location onto the data lines and confirms this by setting MFC signal to 1. Processor loads the data into MDR upon receipt of MFC signal. Memory Write: - Processor writes data into a memory location by loading the address of location into MAR and loading the data into MDR - Write operation sets R/W line to 0. Block Transfer: Refer to Read or Write operation of consecutive address locations in the main memory. EC2303 / Computer Architecture and Organization 8
9 3. Explain internal organization of 16 X 8 memory chip with suitable diagram. Fig gives the internal organization of a small memory chip consisting of 16 words of 8 bit each. Each row of cells constitute a memory word All cells of a row are connected to a common line known as word line which is driven by address decoder Every column of cells are connected to sense / write circuit by two lines. The sense / write circuit is connected to data input / output lines of the chip. During Read, the information stored in the cells selected by the word line transmits this information to the output lines During write operation the sense / write circuit receive input information and store it in the cells selected by word line Internal Orgranisation of 16 X 8 memory chip EC2303 / Computer Architecture and Organization 9
10 4. Explain internal organization of 2M X 8 dynamic memory chip. Internal Organization of 2M X 8 Dynamic Memory Chip - Total number of cells = 16M - The cells are organized in = 4K X 4K array - The number of row = 4K - The number of cells in a row = 4K - The number of address bits to select a row = 12 - The number of address bits to select a byte in a row = 9 - Total address bits = 21 - A9 20 (12) to select a row - A0 8 (09) to select a byte in a row of 4096 bits Internal Organization of 2M X 8 Dynamic Memory Chip 5. Give the classification of Read only memory technologies and explain each. Classification of Read Only Memory (ROM) a. ROM (Read Only Memory) b. PROM (Programmable Read Only Memory) c. EPROM (Erasable Programmable Read Only Memory) d. EEPROM (Electrical Erasable Programmable Read Only Memory) e. FLASH Memory EC2303 / Computer Architecture and Organization 10
11 a. ROM (Read Only Memory) Read Only Memory CELL - ROM Cell used only one transistor and storage element - The Logic 0 is stored, if storage element is shorted - The logic 1 is stored, if storage element is open - Read operation is done by activating word line - Write operation is performed during manufacturing Advantage: Less costly for large volume production Disadvantage: Not programmable b. PROM (Programmable Read Only Memory) - This allows data to be written by user - Programmability is achieved by inserting a fuse at point P - Before programming, the memory contain all 0 s and user can insert 1 by burning the fuse by high current Advantage: Programmable by user Disadvantage: Once programmed, chip content can not be altered, i.e. can not be reprogrammed c. EPROM (Erasable Programmable Read Only Memory) - Here stored data can be erased and new data can be written - The fuse in the PROM is replace by a special Transistor (which can act as a open switch or closed switch) - Here data can be written by injecting current pulse like PROM (0 to 1) - The memory content can be erased by exposing to ultraviolet. During erasing trapped charge dissipate and cell becomes 0. - Hence EPROM chip are mounted with transparent window. Advantage: Reprogramming makes flexible for development EC2303 / Computer Architecture and Organization 11
12 Disadvantage: Erasure need chip to remove from the board and exposure to UV light. d. EEPROM - Here both programming and erasing is done with electric pulse - The voltages needed for erasing, writing and reading are different Advantage: Reprogramming can be done on board (new version of program can be loaded online) Disadvantage: Costly compared to EPROM Different voltage for Erasing and Writing & Erasing e. FLASH This is similar to EEPROM except - In EEPROM, it is possible to read and write the content of a single cell - In flash, it is possible to read the content of a single cell but it is possible to write entire block of cells. - Before writing, the previous contents of the block are erased. Advantage: - has higher density which leads to higher capacity and lower cost per bit than EEPROM - Reprogramming on board - Low power consumption hence used in battery operated device Disadvantage: A single cell can not be written, only entire block can be written. Examples 1. Flash cards / Pen Drives, Flash drives 6. What is cache memory and explain the various mapping algorithms. A small, fast memory introduced between the processor and the main memory is called cache memory which improves the effective speed of the memory. EC2303 / Computer Architecture and Organization 12
13 Use of a Cache Memory CACHE MAPPING ALGORITHM The correspondence between the main memory and cache is specified by MAPPING FUNCTION The Popular mapping functions are a. Direct mapping b. Associative mapping c. Set associative mapping Direct Mapped Cache a. DIRECT MAPPING This is explained by taking a specific example Consider a cache consisting of 128 blocks of 16 words for a total of 2048 words and assume that the main memory is 64K words EC2303 / Computer Architecture and Organization 13
14 Both main memory and cache memory is divided into blocks of size equal to 16 words Here block j of main memory maps to (block j mod 128) of cache. Main memory blocks 0, 128, 256 loaded into cache block 0 Main memory blocks 1, 129, 257 loaded into cache block 1 and so on Placement of a block in the cache is determined from memory address Memory address is divided into three fields as shown in figure Lower order 4 bit select one of 16 words within a block Next 7 bits select cache block Next 5 bit decides block from which segment is mapped to cache. During processing higher order 5 bits are compared with tag bits of cache block pointed by 7 bit cache block field If match desired word is in the block Cache Hit If not desired word is brought from main memory and loaded to cache Cache Miss Advantages: It is easy to implement. Disadvantages: Contention b. ASSOCIATIVE MAPPING EC2303 / Computer Architecture and Organization 14
15 Associative Mapping - Here any main memory block can be loaded into any cache block - which block of main memory is loaded in each cache block is indicated by Tag bits (12 bits) - During operation the Tag bits of the address received will be compared to the Tag bits of each block of the cache to see the desired block is in cache - This is called Associative Mapping Technique - The new block has to be brought into the cache has to replace the existing block only if the cache is full and we use Replacement algorithm c. SET ASSOCIATIVE MAPPING Set Associative Mapping This mapping is the combination of direct mapping and associative mapping technique. The same cache size 2K words organized into two blocks per set. Block j of main block is mapped into (j mod 64) of cache block - memory blocks 0, 64, 128 mapped to cache set 0 and they can occupy either of two blocks position within the set - memory blocks 1, 65, 129 mapped to cache set 1 and so on During operation 6 bit set field give the set which contain the data and 6 bit Tag of address is associatively compared to the tags of the two blocks of the set to check the desired data is in cache. EC2303 / Computer Architecture and Organization 15
16 - The number of blocks per set is a parameter that can be selected to suit the requirement of a particular computer - A cache that has K blocks per set is referred as a K way set associative cache. 7. What is virtual memory and explain the virtual memory address translation. In a Computer system (without virtual storage) the program size is limited by the physical memory available in the system. However the virtual memory system extends the apparent size of the physical memory equal to the address space of the processor. The address translation from the virtual address to the physical address is carried out by a unit called Memory Management Unit (MMU) as shown in diagram below. Virtual Memory Organisation EC2303 / Computer Architecture and Organization 16
17 ADDRESS TRANSLATION The address translation is shown in figure below. Virtual Memory Address Translation Programs and data composed of fixed length unit called PAGES Page table is used to keep address of main memory location for each page and its status the page table kept in the main memory Page Table Base Register: Starting address of page table is stored in this register To get the page table entry for a virtual address, the virtual page number is added to the content of page table base register. The page table entry gives the physical page number. This physical page number to which virtual address offset is added to give the physical address of main memory When the processor generates a virtual address the page table entry confirms that the page is not available in memory is called PAGE FAULT. To Speedup the Address Translation Every time the CPU generate virtual address; MMU has to translate the virtual address to physical address, for this page table entry corresponding to virtual address page has to be read from page table. EC2303 / Computer Architecture and Organization 17
18 Use of an associative mapped TLB To avoid this access time and degradation of performance, recently translated virtual page and its corresponding physical page is kept in a buffer and this buffer is called Translation Look aside Buffer (TLB) When a processor i.e. MMU finds the page table entries in TLB, it does not have to access the page table and saves substantial access time. 8. List three secondary storage devices and briefly explain Magnetic Hard Disk. Secondary Storage Devices - A huge amount of cost effective storage is provided by secondary storage devices. - Popular secondary storage devices. o Magnetic Hard Disk o Magnetic Tape o Optical Disks EC2303 / Computer Architecture and Organization 18
19 i) Magnetic Hard Disk Medium: The storage medium in a magnetic disk consists of one or more disk mounted on a common spindle. A thin magnetic film is deposited on each disk usually on both sides The common spindle is connected to a rotary drive so that magnetic surface is in close proximity to read / write head - Digital information is stored on the magnetic film by applying current pulse - Read / Write head must be maintained at a very small distance in order to achieve high density and reliable read / write operation. - During reading the change in magnetic field caused by the film movement induce the voltage in the coil. Winchester Technology: In modern disk units, the disk and the read / write are placed in a sealed air filtered enclosure. This approach is called Winchester Technology. - In this approach Read / Write heads can be more closer to the surface - Since the head are closer, data density can be more. EC2303 / Computer Architecture and Organization 19
20 Data Organization: Organization of One Surface of a Disk - Each surface is divided into concentric tracks and each track is divided into sector - The set of corresponding tracks on all surfaces form a cylinder. - The data on all tracks of a cylinder can be accessed without moving read / write head. - The data are accessing by specifying surface no, track no, sector no. - Each sector usually contain 512 bytes of sector data - The data is preceded by sector head (Sector No & Track No) - Error correcting code bits are used to detect & correct errors Access Time The Access time for a hard disk consists of two components. 1. Seek Time: Time required to move read / write head to proper tack. Average 5.8 msec. 2. Rotational Delay: Also called Latency Time. The amount of time that lapses after the head is positioned over the current track until the starting position of addressed sector passes under read / write head. The access time can be defined as sum of Seek Time -> Rotational Delay Components of Disk Storage System The disk system consists of three parts 1. Disk: The assembly of disk platters 2. Drive: The mechanisms that spin the disk moves the read / write head & disk is called drive 3. Disk Controller: The electronic circuit which control the drive is called Disk Controller. EC2303 / Computer Architecture and Organization 20
21 9. Briefly Explain about Optical Drives. The popular Optical Storage Devices are a. CD Technology b. DVD Technology c. Blue Ray Technology a. CD Technology (Compact Disk ROM) - CD Technology is based on Laser source (infra red laser) - The Laser beam is directed onto the surface of spinning disk - Physical indentation in the surface are arranged along the track of disk - The reflect the focused beam towards a photo detector which detects stored binary pattern Physical Description - CD is 120mm in diameter and thickness is 1.2mm - Bottom layer is polycarbonate plastic - The surface of plastic is made bit & lands (to reflect data) - A thin layer of aluminum is placed on the top of programmed disk - The laser source and photo detector is place below polycarbonate plastic - when the laser encounts pits & lands get reflected and bright beam - When the laser encounter transistion pit to land or land to pit the reflected light is 180* out of phase and cancel each other and hence dark beam - Actual data of 8bit is converted to 14bit for recording on CD. Data Recording - The data is recorded on spiral tracks - The space between tracks 1.6 Micron - Pits are.5micron wide and.8 to 3 micron long - Data is organized in the form of sectors Speed CD operate at different speed - At basic speed 1x, 75 sectors per second - The data rate is 150 Kbytes - CD is designed for 75 minutes of music and storage capacity of 650 Mbytes - 40x CD has a transfer rate 40 times higher than 1x CDROM Advantage: - Small size - Low cost - Portable EC2303 / Computer Architecture and Organization 21
22 Disadvantage: - 1x data rate is lower - seek time is more CDROM - data is recorded during its manufacturing CD Recordable (CD R) - This can be burned / written with data Disadvantage can not be rewritten CD Rewritable (CD R / W) - This can be used to write multiple times Advantage can be used for taking backup b. DVD Technology (Digital Versatile Disk) - Physical media is identical to CDROM - Capacity o Single Side = 4.7G Bytes o Single Side Double Layer = 8.5 G Bytes o Double Side Single Layer = 9.4 G Bytes o Double Side Double Layer = 17 G Bytes DVD ROM, DVD R, DVD R/W are identical to CD ROM, CD R, CD R/W c. Blue Ray Technology - Physical media is identical to CDROM - Capacity 25 G Bytes - Uses Blue Violet Lasers (405 nanometers) EC2303 / Computer Architecture and Organization 22
23 10. Design 2M X 32 memory system using 512K X 8 static memory chips and draw the diagram. The no. of chips required = 2M X 32 / 512K X 8 = 16. These chips are arranged in four rows and four columns as shown in diagram. Arrangement of memory system 2M X 32 using 512K X 8 static memory chips EC2303 / Computer Architecture and Organization 23
24 11. Explain with diagram about associative memory. Associative Memory Associative memory is one in which any stored item can be accessed directly by using the content of the item generally some specified subfield as an address. Associative memory is also called Content Addressable Memory (CAM) The subfield to address the memory is called Key Organization of Associative Memory Structure of Associative memory The figure shows the structure of an associative memory Each unit of stored information is a fixed length word Any subfield of the word can be chosen as the key The desired key is specified by a mask Register whose content identify the bit position that define the key (need not be adjacent) EC2303 / Computer Architecture and Organization 24
25 The current key is compared simultaneously with all stored words, those that match the key output a match signal which enters a select circuit. The select circuit enables the data field to be accessed Since all words in the memory are required to compare their keys with input key simultaneously each needs its own match circuit The match and select circuits make associative memories more complex and expensive than conventional memories. VLSI Technology makes this associative memory feasible and still costly. Associative Memory Cell The logic circuit of 1 bit Associative memory is shown in diagram. This comprises The cell is D Flip Flop for data storage The match circuit (exclusive Nor gate) for comparing the F/F content to an external data bit D Circuit for reading (Select) Circuit for writing (WE & Select) The results of comparison appears on match output M when M = 1 denotes match and M = 0 denotes no match. The cell is select4ed by addressed for both read and write operation by setting select line S = 1 New data is written into the cell by setting WE = 1 which in turn enables D F/F clock input The stored data can be read out via Q line The mask control line MK is activated (MK = 1) to force the match line M to 0 independent of the data stored in the D F/F MK also disables the input circuit of F/F by forcing CK = 1 Disadvantages o The cell of this type needs about 10 transistors for more than single transistor required for dynamic ram. o Hence the associative memory is costly, large associative memory are rarely used outside cache. EC2303 / Computer Architecture and Organization 25
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