RClamp0582N RailClamp Low Capacitance TVS Diode Array

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1 - Raillamp Description Raillamp TS arrays are ultra low capacitance ESD protection devices designed to protect high speed data interfaces. This series has been specifically designed to protect sensitive components which are connected to high-speed data and transmission lines from overvoltage caused by ESD (electrostatic discharge), DE (able Discharge Events), and EFT (electrical fast transients). The monolithic design incorporates surge rated, low capacitance steering diodes and a TS diode in a single package. Each line has a typical capacitance of <.2pF to ground. The capacitance of each line is well matched for consistant signal balance. A connection to the TS is provided for protection of external voltage buses, such as those found in USB applications. They may be used to meet the ESD iunity requirements of IE -4-2, Level 4 (±k air, ±8k contact discharge). The Rlamp 82N is qualified to AE-Q Grade (-4 to +2 o ) and is supplied in a -pin SLP2N package. It measures.2 x. x.8. Rlamp82N Raillamp Low apacitance TS Diode Array Features ESD protection for high-speed data lines to IE -4-2 (ESD) ±2k (air), ±2k (contact) IE -4-4 (EFT) 4A (/ns) Qualified to AE-Q Grade (-4 to +2 o ) Array of surge rated diodes with internal TS Diode Small package saves board space Protects two I/O lines and a power line Low capacitance:.2pf typical Low clamping voltage Solid-state silicon-avalanche technology Mechanical haracteristics SLP2N Package Pb-Free, Halogen Free, RoHS/WEEE ompliant Nominal Dimensions:.2 x. x.8 Lead Pitch:.4 Lead Finish: NiPdAu Marking : Marking ode Packaging : Tape and Reel Applications Automobile USB MM/SD Port Automobile ideo Ports ircuit Diagram Pin onfiguration GND (Pin ) Bus (Pin ) 4 N (Pin 2) I/O 2 (Pin ) N (Pin 3) I/O (Pin 4) Revision /2/22

2 Rlamp82N Absolute Maximum Ratings Rating Rating Symbol alue Units Peak Peak Pulse Power (tp = 8/2µs) Pulse urrent (tp = 8/2µs) P pk 2 Watts I PP A ESD per IE -4-2 (Air) ESD per IE -4-2 (ontact) ESD ±2 ±2 k Operating Temperature T J - to +2 Storage Temperature T STG to + - Electrical haracteristics (T=2 O unless otherwise specified) Parameter Symbol onditions Minimum Typical Maximum Units Reverse Stand-Off oltage RWM Pin to GND. Reverse Breakdown oltage I t = ma;pin to GND B O T=-4 to 2 O R Reverse Leakage urrent I R WM =., R Pin to GND T=2 O.. µ A T=2 O.2 ua I lamping oltage PP = A, tp = 8/2µ s Any I/O pin to Ground I lamping oltage PP = A, tp = 8/2µ s Any I/O pin to Ground 2 Junction apacitance j R =, f = MHz Any I/O pin to Ground R =, f = MHz Between I/O pins.2. pf.2. pf 22 Semtech orporation. 2

3 Rlamp82N Typical haracteristics Non-Repetitive Peak Pulse Power vs. Pulse Time Power Derating urve 2 Peak Pulse Power - P PP (kw). % Rated Power or I PP (%) Pulse Duration - tp (µs) lamping oltage vs. Peak Pulse urrent I/O to Gnd - Pin 4, to Pin Ambient Temperature T A ( O ) Normalize apacitance vs. Reverse oltage I/O to Gnd - Pin 4, to Pin lamping oltage - () 2 T A =2 O Waveform Parameters: tr = 8µs; td = 2µs Line to GND; (Pin 4 or to Pin ) Peak Pulse urrent - I PP (A) apacitance - j (pf) TS to GND Line to GND T A =2 O f = MHz Reverse oltage - R () 3 ESD lamping (ontact per IE -4-2) Insertion Loss H S2 LOG db / REF db : db 8 MHz lamp oltage () 2 2 T A = 2 O. Waveform ns/ns. orrected for 4dB attenuation. Measured with Ω, 4dB attenuator; Ω Scope Input Impedance. lamp voltage measured at 3ns ESD Surge (k) 22 Semtech orporation. 3 db - db -2 db -8 db -24 db -3 db -3 db -42 db -48 db MHz MHz MHz GHz START. 3 MHz STOP 3. MHz 3 GHz 2: -.2 db 9 MHz 3: -.32 db.8 GHz 4: db 2. GHz

4 Rlamp82N Typical haracteristics apacitance (pf) apacitance v Temperature R=; Line to Line R=.; Line to Line R=; Pin to GND R=.; Pin to GND - Temperature ( O ) Forward oltage - f ().2..8 F v Temperature T A =2 O I F =ma Pins, 4 or to Pin. - Temperature ( O ) Breakdown oltage v Temperature Leakage urrent v Temperature Breakdown oltage - br () 2 9 br Pin4 or to Pin br Pin to Pin Ibr = ma Leakage urrent - Ir (na) 2 2 R =. Pin 4, or to 8 - Temperature ( O ) - Temp. ( ) rosstalk Pin 4 to Pin 22 Semtech orporation. 4

5 Rlamp82N Applications Information Information Device onnection Options for Protection of Two High-Speed Data Lines Data line inputs are normally connected at pins 4 & with the outputs connected at pins 2 & 3. Pin is connected to ground. Note that the circuit at the ground pin is identical to the circuit at each data input/output pin. This is done to further reduce capacitance. The connection to ground should be made directly to a ground plane. The path length should also be kept as short as possible to minimize parasitic inductance. Pin can be connected to cc biased or left not connected depending upon the application. Protecting USB 2. Interfaces The USB interface consists of Data (D- and D+) lines and a.2 voltage bus. Since these pins are part of the connector, they are vulnerable to ESD and cable discharge events. The Rlamp82NQ is designed to protect all four USB connections (, D-, D+, and Gnd). Each device will protect one USB port. When the voltage on the data lines exceed the bus voltage (plus one diode drop), the internal rectifiers are forward biased conducting the transient current away from the protected controller chip. The TS diode directs the surge to ground. The TS diode also acts to suppress ESD strikes directly on the voltage bus. Thus, both power and data pins are protected with a single device. Figure - Pin onfiguration & ircuit Diagram 4 Figure 2 - USB 2. High Speed Protection GND (Pin ) Bus (Pin ) N (Pin 2) D+ or D- (Pin ) N (Pin 3) D+ or D- (Pin 4) USB ontroller D- D+ Pin Pin Pin 2 Pin Pin 3 Pin 4 USB onnector bus D- D+ Gnd 22 Semtech orporation.

6 Rlamp82N Outline Drawing - SLP2N aaa A2 A PIN INDIATOR (LASER MARK) D A B E A SEATING PLANE DIMENSIONS INHES MILLIMETERS DIM MIN NOM MAX MIN NOM MAX A A A2 (.) (.3) b D E e. BS.4 BS L N aaa.3.8 bbb.4. D/2 E/2 2 LxN N bxn e bbb A B Land Pattern - SLP2N NOTES:. ONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). P DIMENSIONS () X G Y Z DIM G P X Y Z INHES (.34) MILLIMETERS (.87) NOTES:. ONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. THIS LAND PATTERN IS FOR REFERENE PURPOSES ONLY. ONSULT YOUR MANUFATURING GROUP TO ENSURE YOUR OMPANY'S MANUFATURING GUIDELINES ARE MET. 22 Semtech orporation.

7 Rlamp82N Marking odes Ordering Information Part Number Qty per Reel Reel Size Rlamp82N.TT 3, 7 Inch Raillamp and Rlamp are marks of Semtech orporation YYWW = Date ode Tape and Reel Specification Pin Location User Direction of feed A B K Device Orientation in Tape.2 ±..4 ±..74 ±. Tape Width B, (Max) D D E F K (MAX) P P P 2 T(MAX) W (.) ( ).8 ±. (.3).7±. (.9±.4) 3.±. (.38±.2) 2.4 (.94) 4.±. (.7±.- 4) 4.±. (.7±.- 4) 2.±. (.79±.2).4 (.) (.32±.2- ) ontact Information Semtech orporation Protection Products Division 2 Flynn Road, amarillo, A 932 Phone: (8)498-2 FAX (8) Semtech orporation. 7

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