Migrating from Macronix MX29GL-G/F and MX68GL-G Devices to MT28EW NOR Flash Devices

Transcription

1 Technical Note TN-13-38: Migrating MX29GL-G/F and MX68GL-G to MT28EW Introduction Migrating from Macronix MX29GL-G/F and MX68GL-G Devices to MT28EW Introduction This technical note describes the process for converting a system design for the Macronix MX29GL-G/F and MX68GL-G devices to a system design for the MT28EW parallel NOR Flash devices, 128Mb, 256Mb, 512Mb, and 1Gb densities. MT28EW high reliability and performance are ensured through advanced technology and product design improvements. MT28EW features a large buffer size of up to 512 words for advanced program performance. Erase performance is improved to meet all variable system design considerations. And MT28EW supports both x8 and x16 data bus for legacy controller compatibility. This document was written using device information available at publication time. In case of inconsistency, information contained in the relevant MT28EW data sheet supersedes the information in this technical note. Generally, the Macronix MX68GL-G/F and MX29GL-G devices include similar functionality, and their specific differences are not addressed here. Also this technical note does not provide detailed MT28EW device information. The standard density-specific MT28EW device data sheet provides a complete description of device functionality, operating modes, and specifications. 1 Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by Micron without notice. Products are only warranted by Micron to meet Micron's production data sheet specifications. All information discussed herein is provided on an "as is" basis, without warranties of any kind.

2 Comparative Overview Table 1: Part Number Comparison Density The MT28EW device, featuring high program and erase performance, is compatible with the MX29GL-G/F 128Mb, 256Mb, and 512Mb devices. Micron supports a monolithic 1Gb device while Macronix MX68GL supports a stacked 512Mb/512Mb device. To integrate line items on a variety of customer applications, this document combines presentation of the MT28EW device speed and voltage options. Package Type TN-13-38: Migrating MX29GL-G/F and MX68GL-G to MT28EW Comparative Overview Micron Part Number Macronix 1Gb 56-pin TSOP (14mm x 20mm) MT28EW01GABA1HJS-0SIT MX68GL1G0GHT2I-10G MT28EW01GABA1LJS-0SIT MX68GL1G0GUT2I-11G MX68GL1G0GLT2I-10G MX68GL1G0GDT2I-11G 64-ball LBGA (11mm x 13mm) MT28EW01GABA1HPC-0SIT MX68GL1G0GHXFI-10G MT28EW01GABA1LPC-0SIT MX68GL1G0GUXFI-11G MX68GL1G0GLXFI-10G MX68GL1G0GDXFI-11G 512Mb 56-pin TSOP (14mm x 20mm) MT28EW512ABA1HJS-0SIT MX29GL512GHT2I-10G MT28EW512ABA1LJS-0SIT MX29GL512GUT2I-11G MX29GL512GLT2I-10G MX29GL512GDT2I-11G 64-ball LBGA (11mm x 13mm) MT28EW512ABA1HPC-0SIT MX29GL512GHXFI-10G MT28EW512ABA1LPC-0SIT MX29GL512GUXFI-11G MX29GL512GLXFI-10G MX29GL512GDXFI-11G 256Mb 56-pin TSOP (14mm x 20mm) MT28EW256ABA1HJS-0SIT MX29GL256FHT2I-90Q MT28EW256ABA1LJS-0SIT MX29GL256FUT2I-11G MX29GL256FLT2I-90Q MX29GL256FDT2I-11G 64-ball LBGA (11mm x 13mm) MT28EW256ABA1HPC-0SIT MX29GL256FHXFI-90Q MT28EW256ABA1LPC-0SIT MX29GL256FUXFI-11G MX29GL256FLXFI-90Q MX29GL256FDXFI-11G 2

3 TN-13-38: Migrating MX29GL-G/F and MX68GL-G to MT28EW Comparative Overview Table 1: Part Number Comparison (Continued) Density Package Type Micron Part Number Macronix 128Mb 56-pin TSOP (14mm x 20mm) MT28EW128ABA1HJS-0SIT MX29GL128FHT2I-70G MT28EW128ABA1LJS-0SIT MX29GL128FHT2I-90G MX29GL128FUT2I-90G MX29GL128FUT2I-11G MX29GL128FLT2I-70G 64-ball LBGA (11mm x 13mm) MT28EW128ABA1HPC-0SIT MX29GL128FHXFI-70G Note: MT28EW128ABA1LPC-0SIT MX29GL128FHXFI-90G MX29GL128FUXFI-11G MX29GL128FLXFI-70G MX29GL128FLXFI-90G MX29GL128FDXFI-11G 1. For valid combination details, refer to or contact Micron sales. Micron MT28EW and Macronix MX29GL-G/F device features are compatible. The MT28EW device provides a larger read page size and program buffer size, but no software updates are required during migration. However, software updates that leverage these MT28EW features can yield improved read performance. To configure MT28EW device software, query CFI word address 4Ch (x16) or 98h (x16) for larger read page size; query CFI word address 2Ah (x16) or 54h (x8) for larger program buffer size option, in either x8 or x16 mode. Table 2: Feature Comparison Feature MT28EW MX29GL-G MX29GL-F Notes Process 45nm 55nm 75nm Density 128Mb 128Mb Package 256Mb 256Mb 512Mb 512Mb 1Gb 512Mb/512Mb stack 64-ball LBGA (11mm x 13mm) 56-pin TSOP (14mm x 20mm) 64-ball LBGA (11mm x 13mm) 56-pin TSOP (14mm x 20mm) 64-ball LBGA (11mm x 13mm) 56-pin TSOP (14mm x 20mm) 56-ball FBGA (7mm x 9mm) 1 Block architecture Uniform 128KB Uniform 128KB Uniform 128KB Data bus x8 and x16 x8 and x16 x8 and x16 MFG ID 89h C2h C2h Page read size 16 words 16 words 8 words 3

4 TN-13-38: Migrating MX29GL-G/F and MX68GL-G to MT28EW Comparative Overview Table 2: Feature Comparison (Continued) Feature MT28EW MX29GL-G MX29GL-F Notes Program write buffer size 256-byte (x8) 512-word (x16) 256-word (x16) 32-word (x16) Extended memory block 128 words ( ) 512 words ( ) 128 words ( ) CFI version Revision 1.3 Revision 1.5 Revision 1.3 CFI table area 10h~50h 10h~79h 10h~50h V CC 2.7V to 3.6V 2.7V to 3.6V 2.7V to 3.6V V CCQ 1.65~V CC 1.65~V CC 1.65~V CC Accelerated voltage 8.5V~9.5V 9.5V~10.5V 9.5V~10.5V 2 Hardware protection Yes Yes Yes Individual block write protection Yes Yes Yes Multiblock erase Yes No Yes Status polling Data polling Dat polling and status register Data polling Unlock bypass Yes No No Chip erase Yes Yes Yes Blank check Yes Yes No 3 CRC Yes No No 3 Notes: 1. Contact Micron sales for detailed information. 2. To prevent damaging the device, designs applying V PP /WP# voltages higher than 9.5V (MAX) should be modified. V PP /WP# should not remain at V PPH for more than 80 hours cumulative. 3. Refer to the data sheet for detailed BLANK CHECK command sets. 4

5 Hardware and Mechanical Considerations Packages and Ballouts Input/Output Capacitance TN-13-38: Migrating MX29GL-G/F and MX68GL-G to MT28EW Hardware and Mechanical Considerations The MT28EW device is available in 56-pin TSOP and 64-ball LBGA packages, both RoHS compliant and halogen-free. MT28EW pin and ball assignments and package physical dimensions are compatible with MX29GL-G/F and MX68GL-G pin and ball assignments and packages. Table 3: Input/Output Capacitance Comparison Parameter MT28EW MX29GL-G (512Mb) MX29GL-F (256Mb) Min Max Min Max Min Max C IN pf C OUT pf Power Supply Decoupling Flash memory devices require careful power supply decoupling. This prevents external transient noise from affecting its operations and internally generated transient noise from affecting other devices in the system. Ceramic chip capacitors of 0.01μF to 0.1μF should be used between each V CC, V CCQ, and V PP supply connection or system ground pin. These high-frequency, inherently low-inductance capacitors should be placed either as close as possible to the device package, or on the opposite side of the printed circuit board (PCB), near the center of the device package footprint. Larger electrolytic or tantalum bulk capacitors (4.7μF to 33.0μF) should also be distributed as needed throughout the system to compensate for voltage sags and surges caused by circuit trace inductance. Transient current magnitudes depend on the capacitive and inductive loading on the device s outputs. For best signal integrity and device performance, high-speed design rules should be used when designing the PCB. Final signal reflections (overshoot and undershoot) may vary by each system. Unit 5

6 Software Considerations TN-13-38: Migrating MX29GL-G/F and MX68GL-G to MT28EW Software Considerations Command Set MT28EW command sets are compatible with those of the MX29GL-G/F device except for the ENTER/CLEAR STATUS REGISTER commands (70h/71h) and the specific PRO- GRAM SUSPEND/RESUME commands (51h/50h) supported by MX29GL-G. Common commands, B0h/30h for ERASE SUSPEND/ RESUME and PROGRAM SUS- PEND/ RESUME, are supported by Micron and Macronix parts. In addition, both Micron and Macronix parts support the basic data polling method. Therefore, most system designs will not need software modifications. Manufacturer ID and Auto Select Comparison MT28EW device ID (base +01h/0Eh/0Fh) and block protection (block address +02h) are fully compatible with those of the MX29GL-G/F device. The MT28EW manufacturer ID and protection register indicator are different from the MX29GL-G ID and indicator, but the same as the MX29GL-F ID and indicator. System design software modifications should be very limited. To obtain the device ID of the secure version of MT28EW, contact your local Micron sales offices for the Security Addendum. Table 4: Auto Select Comparison Word Mode Description Address MT28EW MX29GL-G MX29GL-F Manufacturer ID (Base) + 00h 0089h 00C2h 00C2h Protection register indicator (V PP /WP# locks highest block) Protection register indicator (V PP /WP# locks lowest block) Factory locked (Base) + 03h 0099h Register might differ by 0099h Factory unlocked 0019h configuration 0019h Factory locked 0089h Register might differ by 0089h Factory unlocked 0009h configuration 0009h 6

7 TN-13-38: Migrating MX29GL-G/F and MX68GL-G to MT28EW Software Considerations CFI Comparison MT28EW and MX29GL-G/F CFI differences exist because of the different device performance characteristics. Table 5: CFI Comparison Address (x16) Description MT28EW MX29GL-G MX29GL-F Notes 1Dh V PPH (programming) supply minimum Bits[7:4] hex value in volts 1Eh V PPH (programming) supply maximum PROGRAM/ERASE voltage Bits[3:0] BCD value in 100mV Bits[7:4] hex value in volts Bits[3:0] BCD value in 100mV Fh Typical timeout for single byte/word PROGRAM = 2 n µs h Typical timeout for maximum size BUFFER PROGRAM = 2 n µs h Typical timeout for individual BLOCK ERASE = 2 n ms h Typical timeout for full-chip ERASE = 2 n ms 23h 24h 25h Maximum timeout for byte/word PROGRAM = 2 n times typical timeout Maximum timeout for BUFFER PROGRAM = 2 n times typical timeout Maximum timeout per individual BLOCK ERASE = 2 n times typical timeout 128Mb 000F Mb Mb Gb h Maximum timeout for chip ERASE = 2 n times typical timeout Ah Maximum number of bytes in multiplebyte x8 mode write = 2 n x16 mode 000A 43h Major version number, ASCII h Minor version number, ASCII h Address sensitive unlock bits Bits[1:0] 001C 001C 0014 Silicon revision number bits 0 = Required 1 = Not required Bits[7:2] 4Ch Page mode 00 = Not supported = 4-word page 02 = 8-word page 03 = 16-word page 7

8 TN-13-38: Migrating MX29GL-G/F and MX68GL-G to MT28EW Software Considerations Table 5: CFI Comparison (Continued) Address (x16) Description MT28EW MX29GL-G MX29GL-F Notes 4Dh 4Eh V PPH supply minimum PROGRAM/ERASE voltage V PPH supply maximum PROGRAM/ERASE voltage Bits[7:4] hex value in volts Bits[3:0] BCD value in 100mV Bits[7:4] hex value in volts Bits[3:0] BCD value in 100mV A5 00A5 Notes: 1. On MT28EW, the query result from 2Ah is modulated by BYTE# status for x8 and x16 modes, and designs can query the address to get the proper maximum buffer size. 2. Macronix MX29GL-G version includes an extra CFI space 51h~79H with additional information. Extended Memory Block and Lock Register Bits Table 6: Lock Register Bits Word Mode MT28EW and MX29GL-F extended memory blocks are fully compatible (8 words words). However, the MX29GL-G memory block is different (256 words word). MT28EW and MX29GL-F lock register bits definitions are the same. But MX29GL-G lock register bits DQ6 and DQ0 are different. MT28EW nonvolatile protection provides the same function as the MX29GL-G/F solid protection. The MT28EW extended memory block is equivalent to the MX29GL-G/F secure silicon sector. Address MT28EW MX29GL-G MX29GL-F DQ[15:7] Reserved Reserved Reserved DQ6 Reserved Security sector customer lock bit Reserved DQ[5:3} Reserved Reserved Reserved DQ2 DQ1 DQ0 Password protection mode lock bit Password protection mode lock bit Password protection mode lock bit Nonvolatile protection mode lock bit Extended memory protection mode lock bit Solid protection mode lock bit Security sector factory lock bit Solid protection mode lock bit Secured silicon sector protection bit 8

9 Performance Comparison Shown here are key specification differences between MT28EW and MX29GL-G/F. All data sheet parameters should be confirmed using a real application to ensure a successful conversion from MX29GL-G/F to MT28EW. MT28EW features significantly improved program and erase performance. Since program and erase currents are effectively the same for the Micron and Macronix devices, the faster program and erase times of the Micron device can provide a proportional energy reduction. Table 7: Program and Erase Performance Comparison (Word Mode) Parameter Block Erase MT28EW MX29GL-G MX29GL-F Typ Max Typ Max Typ Max Block erase ms Erase timeout µs Program/Erase Suspend Erase suspend latency time µs Program suspend latency time Erase/program or suspend to next resume ( t RES) 1 Program Single word µs Write-to-buffer (256 words) Write-to-buffer (512 words) Blank Check TN-13-38: Migrating MX29GL-G/F and MX68GL-G to MT28EW Performance Comparison Blank check: main block ms Note: 1. This typical value allows an ERASE operation to progress to completion. It is important to note that the algorithm might never finish if the ERASE operation is always suspended less than this specification. Table 8: Read AC Performance Comparison 3V Symbol MT28EW MX29GL-G MX29GL-F Parameter Legacy JEDEC Min Max Min Max Min Max Unit Notes Address valid to output valid t ACC t AVQV 95/70 100/110 70/90 ns 1 Page address access t APA ns OE# LOW to output valid t OE t GLQV ns Note: 1. For MT28EW, 70ns spec is available only for 128Mb/256Mb. 9

10 TN-13-38: Migrating MX29GL-G/F and MX68GL-G to MT28EW Power-on and Reset Timings Table 9: Power Consumption Comparison Parameter Read V CC random read current (5Mhz) Symbol MT28EW MX29GL-G MX29GL-F Typ Max Typ Max Typ Max I CC / ma V CC page read current 1 I CC Standby V CC standby current Program/Erase V CC erase/program current 1Gb I CC µa 512Mb Mb Mb I CC ma Unit Note: 1. The page read current spec is based on different read cycles, 13Mhz for MT28EW, 10Mhz for MX29GL-G/F. It also applies to different densities, all densities for MT28EW, 1Gb for MX29GL-G, 256Mb for MX29GL-F. Power-on and Reset Timings Table 10: Reset Timing Comparison Condition/Parameter Because many of the more common processors support the MT28EW timings, there should be no adverse effect from timing differences. Symbol MT28EW MX29GL-G MX29GL-F Legacy JEDEC Min Max Min Max Min Max V CC power valid to RST# HIGH t VCS t VCHPH µs RST# LOW to read mode during program or erase t READY t PLRH µs RST# pulse width t RP t PLPH ns/ 10µs RST# HIGH to CE# LOW, OE# LOW t RH t PHEL, t PHGL 500ns/ 10µs Unit ns ns Low V CC lock-out voltage V LKO V 10

11 System Validation TN-13-38: Migrating MX29GL-G/F and MX68GL-G to MT28EW System Validation Because Linux is a widely used operating system in embedded applications, a systemlevel validation with the following environmental factors is performed on each MT28EW device density. ARM9, 3.3V, x16 I/O, CPU: MHz Memory bus clock: MHz Linux version: and , HZ = 200 File system: JFFS2 and UBIFS MTD Validation The basic functions and stress tests applied by the Linux MTD driver have been performed with Linux test project (LTP) utility. It demonstrates robust compatibility and good performance. Table 11: Typical Write Speed Comparison Size MT28EW MX29GL-F Unit 10KB MB/s 100KB MB MB Notes: 1. Speed is measured through the function that time dd if = /dev/zero of = /dev/mtd0 bs = 1k count = 10/100/1000/4000 conv = sync. The performance is subject to change by different system application. 2. The typical data is measured on limited samples. MTD driver includes a typical delay time probed from CFI 1Fh (x16) after the Flash WRITE operation is initiated. Table 12: Typical Format Speed Comparison Format Size MT28EW MX29GL-F Unit JFFS2 Blank Flash 16MB s 32MB % Dirty Flash 16MB MB UBIFS Blank Flash 16MB MB % Dirty Flash 16MB MB Notes: 1. Speed is measured through the function that time flash_eraseall jq /dev/mtd0;time ubiformat yq /dev/mtd0. The system performance is subject to change by different system application. 2. The typical data is measured on limited samples. MTD driver includes a typical delay time after the Flash ERASE operation is initiated; that is, half of the time-value probed 11

12 TN-13-38: Migrating MX29GL-G/F and MX68GL-G to MT28EW System Validation File System Validation from CFI 21h (x16). It mediates the performance advantage of MT28EW on blank Flash formatting. All file operations including READ, WRITE, and DELETE, and all partition operations including FORMAT, MOUNT, and UNMOUNT have been validated on both the JFFS2 and the UBIFS file system. Stress Tests Stress reliability test is performed to validate the power loss cycling more than 40,000 times on both chip level and system level. The ERASE SUSPEND operation is stressed up to 40,000 cycles. All subsequent READ, WORD PROGRAM, and BUFFER PROGRAM operations after an ERASE SUSPEND command work successfully. 12

13 Related Information TN-13-38: Migrating MX29GL-G/F and MX68GL-G to MT28EW Related Information Table 13: Document List Document/Tool Parallel NOR Flash Embedded Memory MT28EW datasheet (all densities) Macronix MX29GL512G/MX68GL1G0G datasheet rev 1.0 Macronix MX29GL256F rev1.5/mx29gl128f 1.4 datasheet Application Note : Power Loss Recovery for NOR Flash Memory TN-13-30: System Design Considerations with Micron Flash Memory Notes: 1. Contact your local Micron or distribution sales office to request additional documentation. 2. Visit for technical documentation. 13

14 TN-13-38: Migrating MX29GL-G/F and MX68GL-G to MT28EW Revision History Revision History Rev. A 10/14 Initial release 8000 S. Federal Way, P.O. Box 6, Boise, ID , Tel: Sales inquiries: Micron and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. 14