RF ESD Protection Strategies The Design and Performance Trade-off Challenges

Size: px
Start display at page:

Download "RF ESD Protection Strategies The Design and Performance Trade-off Challenges"

Transcription

1 RF ESD Protection Strategies The Design and Performance Trade-off Challenges Ph.Jansen, S.Thijs, D.Linten, M.I.Natarajan V.Vassilev, M.Liu, D.Trémouilles, S.Decoutere, G.Groeseneken T.Nakaie, M.Sawada, T.Hasebe A.Concannon, V.Vashchenko, M.ter Beek

2 Outline of Presentation Introduction Key performance parameters Diode protection with Power Clamp Inductor protection with Power Clamp Full circuit ESD co-design Partial circuit ESD co-design Conclusions CICC05 - IMEC 2

3 Introduction: RF circuit design Integrated RF 5.5 GHz 90nm CMOS technology BiCMOS technology Typical design for performance: Large gain Low noise Linearity But ESD protection is often overlooked CICC05 - IMEC 3

4 Introduction: RF circuit design Common issues of ESD protection: Extra input capacitance Gain reduction Noise increase Comparison of advantages and disadvantages of several ESD protection strategies CICC05 - IMEC 4

5 Introduction: ESD protection V DD, p1 V DD V DD, p2 Diode protection with power clamp Zap RF IN ESD1 ESD2 B A L G L LOAD C 1 C L 2 S ESD5 ESD3 ESD4 RF OUT Inductor protection with power clamp Distributed protection Resonant and cancellation V SS, p1 V SS, p2 Co-design V SS CICC05 - IMEC 5

6 Key performance parameters Performance figure Target Value f C ) f C S11 S22 S21 S12 NF IIP3 Ptot Area ESD protection level 5.5 GHz < -10 db < -10 db > 15 db < -30 db < 3 db As high as possible As low as possible As small as possible > 2 kv HBM CICC05 - IMEC 6

7 Key performance parameters Low-power RF Figure-Of-Merit FOM 1 [ mw 1 ] = Gain[ abs] ( NF[ abs] 1). P [ mw ] Brederlow s RF Figure-Of-Merit DC FOM 2 [ GHz] = Gain[ abs]. IIP3[ mw ]. fc[ GHz] ( NF[ abs] 1). P [ mw ] DC CICC05 - IMEC 7

8 Diode protection with Power Clamp BiCMOS LNA F c = 5.5 GHz Pn and Np diodes of 71μm 2 (~100fF) S21 reduction NF: +0.4 db FOM 2 increase 50V -> 3kV HBM Gain (S21), Input reflection (S11) [db] S21 S Frequency [GHz] CICC05 - IMEC 8

9 Diode protection with Power Clamp 90nm CMOS LNA F c = 5 GHz Pn and Np diodes of 65μm 2 (~100fF) S21 reduction NF: +0.6 db FOM 2 increase <50V -> 500V HBM Insufficient: Why? Frequency [GHz] CICC05 - IMEC Frequency [GHz] 9 Gain (S21), Input reflection (S11) [db] Noise figure 50 Ω [db] ESD protected LNA Reference LNA ESD protected LNA Reference LNA

10 Diode protection with Power Clamp V DD, p1 V DD V DD, p2 Insufficient protection ESD current path B Zap RF IN ESD1 ESD2 B A L G L LOAD C 1 C L 2 S ESD5 ESD3 ESD4 RF OUT Parasitic current path A V SS, p1 V SS V SS, p2 CICC05 - IMEC 10

11 Diode protection with Power Clamp Insufficient protection: BiCMOS LNA: parasitic ESD current flows through L G, emitter diode and L S to ground 90nm CMOS LNA: parasitic ESD current loads gate capacitor and builds up overvoltage Solutions: On-chip capacitor Series resistor CICC05 - IMEC 11

12 Inductor protection with Power Clamp V DD CA I BIAS C DEC M 1' L load M ESD R B M 2 C 1 RF IN A D 5 D 4 RF OUT C pad L ESD C c L g M 1 D 1 D 3 D 2 L s C 2 C pad CICC05 - IMEC 12

13 Inductor protection with Power Clamp Addition of inductor as plug-n-play Diverts ESD current to ground Is transparent for the RF signal Inductor selection: S11 input matching Over-voltage at the gate during ESD Parasitic resistance of the inductor during ESD and in RF operation CICC05 - IMEC 13

14 Inductor protection with Power Clamp 0-5 S11 (db) no inductor 1nH inductor 2nH inductor 3nH inductor 5nH inductor Frequency (GHz) CICC05 - IMEC 14

15 Inductor protection with Power Clamp Vgate (V) nH inductor 3nH inductor 2nH inductor 1nH inductor Time (s) CICC05 - IMEC 15

16 Inductor protection with Power Clamp M ESD L ESD CICC05 - IMEC 16

17 Inductor protection with Power Clamp Measurement results Gain (S21), Input reflection (S11) [db] ESD protected LNA Reference LNA Frequency [GHz] Noise figure 50 Ω [db] ESD protected LNA Reference LNA Frequency [GHz] CICC05 - IMEC 17

18 Inductor protection with Power Clamp Gate over-voltage protection Add a minimum size reverse diode at the gate to block negative over-voltage Add two minimum size forward diodes at the gate, biased at 0.6V to block positive over-voltage These diodes are placed right in front of the gate CICC05 - IMEC 18

19 Inductor protection with Power Clamp V in C c V gate M 2 L g M 1 L ESD L s Schematic with additional diodes to clamp the voltage at M1 CICC05 - IMEC 19

20 Inductor protection with Power Clamp Circuit LNA ESD-LNA ESD-LNA no ESD w/o diodes with diodes Vdd [Volt] Current [ma] Gain [db] S11 [db] S22 [db] S12 [db] NF [db] dB CP [dbm] IIP3 [dbm] TLP [A] HBM [kv] MM [V] CICC05 - IMEC 20

21 Inductor protection with Power Clamp Measurement results Gain (S21), Input reflection (S11) [db] ESD protected LNA Reference LNA Frequency [GHz] Noise figure 50 Ω [db] ESD protected LNA Reference LNA Frequency [GHz] CICC05 - IMEC 21

22 Full circuit ESD co-design ESD protection is integrated into the matching circuit Typical matching circuit is extended to include ESD protection CICC05 - IMEC 22

23 Full circuit ESD co-design Schematic including the ESD protection into the matching circuit CICC05 - IMEC 23

24 Full circuit ESD co-design Circuit LNA no ESD ESD-LNA Co-design Vdd [Volt] Current [ma] Gain [db] S11 [db] S22 [db] S12 [db] NF [db] dB CP [dbm] IIP3 [dbm] -1-5 HBM [kv] CICC05 - IMEC 24

25 Full circuit ESD co-design Measurement results Gain (S21), Input reflection (S11) [db] ESD protected LNA Reference LNA Frequency [GHz] Noise figure 50 Ω [db] ESD protected LNA Reference LNA Frequency [GHz] CICC05 - IMEC 25

26 Partial circuit ESD co-design Determine parasitic loading due to the ESD protection and other parasitics Take this value into account for input/output matching Opposite to previous methods Determine ESD robustness Optimize LNA for this robustness CICC05 - IMEC 26

27 Partial circuit ESD co-design V CC V CC L bw L bw bonding wire bondpad D ESD1 L o R o D ESD1 In C d L bwin V Bias2 V Bias1 Q 2 C o R L L bwout C d Out Q 1 Q buf D ESD2 L e1 L e2 V Bias3 L buf on-chip D ESD2 L bw L bw CICC05 - IMEC 27

28 Partial circuit ESD co-design Measurement results for an ultra wideband LNA in 0.35μm BiCMOS technology Gain (db) NF (db) Frequency (GHz) CICC05 - IMEC 28

29 Conclusions Comparison of 4 RF ESD protection strategies with respect to their respective performance trade-offs Discussion of the limiting factors and proposal of solutions for further improvement Review of the performance parameters for 90nm CMOS LNA s at 5 GHz CICC05 - IMEC 29

30 Conclusions Circuit LNA LNA ESD-LNA ESD-LNA ESD-LNA diodes inductor inductor co-design w/o diodes with diodes Vdd [V] Current [ma] Gain [db] S11 [db] S22 [db] S12 [db] NF [db] dB CP [dbm] IIP3 [dbm] TLP [A] HBM [kv] MM [V] CICC05 - IMEC 30

Chapter 2 On-Chip Protection Solution for Radio Frequency Integrated Circuits in Standard CMOS Process

Chapter 2 On-Chip Protection Solution for Radio Frequency Integrated Circuits in Standard CMOS Process Chapter 2 On-Chip Protection Solution for Radio Frequency Integrated Circuits in Standard CMOS Process 2.1 Introduction Standard CMOS technologies have been increasingly used in RF IC applications mainly

More information

ESD Protection Structure with Inductor-Triggered SCR for RF Applications in 65-nm CMOS Process

ESD Protection Structure with Inductor-Triggered SCR for RF Applications in 65-nm CMOS Process ESD Protection Structure with Inductor-Triggered SCR for RF Applications in 65-nm CMOS Process Chun-Yu Lin 1, Li-Wei Chu 1, Ming-Dou Ker 1, Ming-Hsiang Song 2, Chewn-Pu Jou 2, Tse-Hua Lu 2, Jen-Chou Tseng

More information

ESD Protection Circuits: Basics to nano-metric ASICs

ESD Protection Circuits: Basics to nano-metric ASICs ESD Protection Circuits: Basics to nano-metric ASICs Manoj Sachdev University of Waterloo msachdev@ece.uwaterloo.ca September 2007 1 Outline Group Introduction ESD Basics Basic ESD Protection Circuits

More information

ESD Protection Design on T/R Switch with Embedded SCR in CMOS Process

ESD Protection Design on T/R Switch with Embedded SCR in CMOS Process ESD Protection Design on T/R Switch with Embedded SCR in CMOS Process Tao-Yi Hung and Ming-Dou Ker Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan Abstract- ESD protection design

More information

Power IC 용 ESD 보호기술. 구용서 ( Yong-Seo Koo ) Electronic Engineering Dankook University, Korea

Power IC 용 ESD 보호기술. 구용서 ( Yong-Seo Koo ) Electronic Engineering Dankook University, Korea Power IC 용 ESD 보호기술 구용서 ( Yong-Seo Koo ) Electronic Engineering Dankook University, Korea yskoo@dankook.ac.kr 031-8005-3625 Outline Introduction Basic Concept of ESD Protection Circuit ESD Technology Issue

More information

ESD Protection Design With Low-Capacitance Consideration for High-Speed/High- Frequency I/O Interfaces in Integrated Circuits

ESD Protection Design With Low-Capacitance Consideration for High-Speed/High- Frequency I/O Interfaces in Integrated Circuits Recent Patents on Engineering 2007, 1, 000-000 1 ESD Protection Design With Low-Capacitance Consideration for High-Speed/High- Frequency I/O Interfaces in Integrated Circuits Ming-Dou Ker* and Yuan-Wen

More information

Application Note No. 103

Application Note No. 103 Application Note, Rev. 1., June 27 Application Note No. 13 ESD and Antenna Protection using Infineon ESDP8RFL RF & Protection Devices Edition 27-6-27 Published by Infineon Technologies AG 81726 München,

More information

Optimization of Broadband RF Performance and ESD Robustness by π-model Distributed ESD Protection Scheme

Optimization of Broadband RF Performance and ESD Robustness by π-model Distributed ESD Protection Scheme Optimization of Broadband RF Performance and ESD Robustness by π-model Distributed ESD Protection Scheme Ming-Dou Ker and Bing-Jye Kuo Nanoelectronics and Gigascale Systems Laboratory, Institute of Electronics,

More information

MMA043AA Datasheet 0.5 GHz 12 GHz GaAs phemt MMIC Wideband Low-Noise Amplifier

MMA043AA Datasheet 0.5 GHz 12 GHz GaAs phemt MMIC Wideband Low-Noise Amplifier MMA043AA Datasheet 0.5 GHz 12 GHz GaAs phemt MMIC Wideband Low-Noise Amplifier Microsemi Corporate Headquarters One Enterprise, Aliso Viejo, CA 92656 USA Within the USA: +1 (800) 713-4113 Outside the USA:

More information

6 Channel EMI Filter Array with ESD Protection

6 Channel EMI Filter Array with ESD Protection 6 Channel EMI Filter Array with ESD Protection Features Six channels of EMI filtering for data ports Pi-style EMI filters in a capacitor-resistor-capacitor (C-R-C) network Greater than 32dB attenuation

More information

GRF2051. Ultra-Low Noise Amplifier; Tuning Range: GHz. Features. Applications. Preliminary. Product Description. Functional Block Diagram Ven

GRF2051. Ultra-Low Noise Amplifier; Tuning Range: GHz. Features. Applications. Preliminary. Product Description. Functional Block Diagram Ven Ultra-Low Noise Amplifier; Tuning Range: 0.7 3.8 GHz Package: 2.0 x 2.0 mm QFN-12 Product Description Features Reference Condition: 1.9 GHz, 5.0 V and 70 ma Gain: 19.2 db Eval Board NF: 0.37 db De-embedded

More information

GRF2505. Linear PA Driver/Ultra-low Noise Amplifier; GHz. Features. Applications. Preliminary. Product Description. Functional Block Diagram

GRF2505. Linear PA Driver/Ultra-low Noise Amplifier; GHz. Features. Applications. Preliminary. Product Description. Functional Block Diagram Linear PA Driver/Ultra-low Noise Amplifier; 4.0-6.0 GHz Package: 6-Pin DFN Product Description Features Broadband: 4.0 GHz to 6.0 GHz 0.80 db Noise Figure at 5.5 GHz 13.2 db gain, +33 dbm OIP3 and +20.5

More information

LCD and Camera EMI Filter Array with ESD Protection

LCD and Camera EMI Filter Array with ESD Protection LCD and Camera EMI Filter Array with ESD Protection Features Six and eight channels of EMI filtering with integrated ESD protection 0.4mm pitch, 15-bump, 2.360mm x 1.053mm footprint Chip Scale Package

More information

GRF3044. Preliminary. Broadband Gain Block 100 MHz to 12.0 GHz. Product Description. Features. Applications

GRF3044. Preliminary. Broadband Gain Block 100 MHz to 12.0 GHz. Product Description. Features. Applications Product Description is a broadband low noise gain block designed for applications up to 11.0 GHz, exhibiting a typical low noise figure (NF) of 1.8 db along with high gain. Features Reference: 4.0 GHz;

More information

MMA044AA Datasheet 6 GHz 18 GHz GaAs phemt MMIC Wideband Low-Noise Amplifier

MMA044AA Datasheet 6 GHz 18 GHz GaAs phemt MMIC Wideband Low-Noise Amplifier MMA044AA Datasheet 6 GHz 18 GHz GaAs phemt MMIC Wideband Low-Noise Amplifier Microsemi Corporate Headquarters One Enterprise, Aliso Viejo, CA 92656 USA Within the USA: +1 (800) 713-4113 Outside the USA:

More information

PAPER Impedance-Isolation Technique for ESD Protection Design in RF Integrated Circuits

PAPER Impedance-Isolation Technique for ESD Protection Design in RF Integrated Circuits IEICE TRANS. ELECTRON., VOL.E92 C, NO.3 MARCH 2009 341 PAPER Impedance-Isolation Technique for ESD Protection Design in RF Integrated Circuits Ming-Dou KER a), Member and Yuan-Wen HSIAO, Nonmember SUMMARY

More information

GRF4042. Low Noise Amplifier with Bypass & Guerrilla Armor ; GHz. Features. Applications. Preliminary. Product Description

GRF4042. Low Noise Amplifier with Bypass & Guerrilla Armor ; GHz. Features. Applications. Preliminary. Product Description Preliminary Low Noise Amplifier with Bypass & Guerrilla Armor ; 0.4 2.7 GHz Package: 2.0 x 2.0 mm QFN-12 Product Description Features 0.7 GHz to 2.7 GHz (Single Tune) Bypass + Guerrilla Armor NF: 0.85

More information

STF701. T-Filter with TVS Diode Array For EMI Filtering and ESD Protection. PROTECTION PRODUCTS Description. Features. Mechanical Characteristics

STF701. T-Filter with TVS Diode Array For EMI Filtering and ESD Protection. PROTECTION PRODUCTS Description. Features. Mechanical Characteristics Description The STF701 is a low pass T-filter with integrated TVS diodes. It is designed to provide bi-directional filtering of unwanted EMI/RFI signals and electrostatic discharge (ESD) protection in

More information

1, 2, 4 and 8-Channel Very Low Capacitance ESD Protectors

1, 2, 4 and 8-Channel Very Low Capacitance ESD Protectors 1, 2, 4 and 8-Channel Very Low Capacitance ESD Protectors CM1210 Features 1,2,4 and 8 channels of ESD protection Very low loading capacitance (1.0pF typical) ±6 kv ESD protection per channel (IEC 61000-4-2

More information

GRF2133. Preliminary. Ultra-High Gain LNA Tuning Range: 0.1 to 2.7 GHz. Product Description. Features. Applications

GRF2133. Preliminary. Ultra-High Gain LNA Tuning Range: 0.1 to 2.7 GHz. Product Description. Features. Applications Product Description is a broadband linear gain block featuring ultra-high gain and sub 0.85 db noise figure for small cell, cellular booster, wireless infrastructure and other high performance applications.

More information

PART TOP VIEW ADDR2 ADDR3 ADDR4 SELECT S/H CONFIG V L DGND V SS AGND IN CH. Maxim Integrated Products 1

PART TOP VIEW ADDR2 ADDR3 ADDR4 SELECT S/H CONFIG V L DGND V SS AGND IN CH. Maxim Integrated Products 1 9-675; Rev ; 4/ 32-Channel Sample/Hold Amplifier General Description The MAX567 contains 32 sample-and-hold amplifiers driven by a single multiplexed input. The control logic addressing the outputs is

More information

GRF2013. Released. Broadband Linear Gain Block 0.05 to 8.0 GHz. Product Description. Features. Applications

GRF2013. Released. Broadband Linear Gain Block 0.05 to 8.0 GHz. Product Description. Features. Applications Product Description is a broadband gain block with low noise figure and high linearity designed for small cell, wireless infrastructure and other high performance applications. It exhibits outstanding

More information

CM1461. Praetorian C-L-C LCD and Camera EMI Filter Array with ESD Protection

CM1461. Praetorian C-L-C LCD and Camera EMI Filter Array with ESD Protection Praetorian C-L-C LCD and Camera EMI Filter Array with ESD Protection Product Description The CM1461 is a family of pi style EMI filter arrays with ESD protection, which integrates four, six and eight filters

More information

ADVANCED ESD PROTECTION

ADVANCED ESD PROTECTION ADVANCED ESD PROTECTION June 8, 21 Prof. Albert Wang Dept. of Electrical Engineering University of California 417 EBU2, Riverside, CA 92521 Email: aw@ee.ucr.edu Tel: (951) 827-2555 http://www.ee.ucr.edu/~aw

More information

UMD 1423 UNITED MICRO DEVICE INC. Pi filter array with ESD protection. PRODUCT DESCRIPTION APPLICATIONS. This device has 20-bumps 4.

UMD 1423 UNITED MICRO DEVICE INC. Pi filter array with ESD protection. PRODUCT DESCRIPTION APPLICATIONS. This device has 20-bumps 4. PRODUCT DESCRIPTION UMD1423 is a Pi filter array with TVS diodes for ESD protection. This device has six Pi filters integrated along with four channels of ESD protection. The Pi filters have values of

More information

GRF2870 Guerrilla Bloc Ultra-LNA GHz

GRF2870 Guerrilla Bloc Ultra-LNA GHz Product Description is a fully integrated amplifier offering industry leading ultra-low noise and high linearity over 0.6 to 1.0 GHz with no external matching or bias de-coupling required. Features Reference:

More information

GRF4142. Preliminary. LNA/Driver w/bypass Tuning Range: 0.1 to 3.8 GHz. Product Description. Features. Applications

GRF4142. Preliminary. LNA/Driver w/bypass Tuning Range: 0.1 to 3.8 GHz. Product Description. Features. Applications Product Description Features Reference: 3.3V/50mA/1.9 GHz Gain: 15.3 db is a low noise amplifier (LNA) with low loss bypass which requires only a single control input. It is designed for high performance

More information

GRF2012. Released. Broadband Linear Gain Block 0.05 to 3.8 GHz. Product Description. Features. Applications

GRF2012. Released. Broadband Linear Gain Block 0.05 to 3.8 GHz. Product Description. Features. Applications Product Description Features Reference: 5V/90mA/900 MHz Gain: 14.8 db OIP3: 40.0 dbm OP1dB: 23.0 dbm NF: 2.7 db Reference: 8V/100mA/900 MHz is a broadband gain block with low noise figure and industry

More information

Lecture 20: Package, Power, and I/O

Lecture 20: Package, Power, and I/O Introduction to CMOS VLSI Design Lecture 20: Package, Power, and I/O David Harris Harvey Mudd College Spring 2004 1 Outline Packaging Power Distribution I/O Synchronization Slide 2 2 Packages Package functions

More information

Data Sheet 6GX. MGA MHz MHz Flat Gain High Linearity Gain Block. Features. Description. Specifications. Applications.

Data Sheet 6GX. MGA MHz MHz Flat Gain High Linearity Gain Block. Features. Description. Specifications. Applications. MGA-30689 40MHz - 3000MHz Flat Gain High Linearity Gain Block Data Sheet Description Avago Technologies MGA-30689 is a flat gain, high linearity, low noise, 22dBm Gain Block with good OIP3 achieved through

More information

High Performance Analog Solutions for Digital World ESD & EMI Product Presentation

High Performance Analog Solutions for Digital World ESD & EMI Product Presentation ESD & EMI Product Presentation Union Semiconductor Inc. UNION ESD Products 50nm ESD Protechtion Area Gate Oxide Thickness Trend: Chip size decreases to minimum Impact: 12.5nm 8nm Gate Oxide Thickness 4.15nm

More information

XRD8775 CMOS 8-Bit High Speed Analog-to-Digital Converter

XRD8775 CMOS 8-Bit High Speed Analog-to-Digital Converter CMOS 8-Bit High Speed Analog-to-Digital Converter April 2002-4 FEATURES 8-Bit Resolution Up to 20MHz Sampling Rate Internal S/H Function Single Supply: 5V V IN DC Range: 0V to V DD V REF DC Range: 1V to

More information

Design of local ESD clamp for cross-power-domain interface circuits

Design of local ESD clamp for cross-power-domain interface circuits This article has been accepted and published on J-STAGE in advance of copyediting. Content is final as presented. IEICE Electronics Express, Vol.* No.*,*-* Design of local ESD clamp for cross-power-domain

More information

Upstream USB Port Terminator

Upstream USB Port Terminator Upstream Port Terminator Features One upstream port terminator, EMI filter and transient overvoltage protector in a single surfacemount package Compact SC70 or SOT3 package saves board space and lowers

More information

GRF2072. Preliminary. Ultra-Low Noise Amplifier Tuning Range: GHz. Product Description. Features. Applications

GRF2072. Preliminary. Ultra-Low Noise Amplifier Tuning Range: GHz. Product Description. Features. Applications Product Description Features Reference: 5V/70mA/2.5 GHz Gain: 19.8 db Eval Board NF: 0.55 db OP1dB: 20.0 dbm OIP3: 37.5 dbm Flexible Bias Voltage and Current Process: GaAs phemt is a broadband, linear,

More information

2 Channel Headset EMI Filter with ESD Protection

2 Channel Headset EMI Filter with ESD Protection 2 Channel Headset EMI Filter with ESD Protection Features Two channels of EMI filtering, one for a microphone and one for an earpiece speaker Pi-style EMI filters in a capacitor-resistor-capacitor (C-R-C)

More information

GRF5110. Preliminary dbm Power-LNA Tuning Range: GHz. Product Description

GRF5110. Preliminary dbm Power-LNA Tuning Range: GHz. Product Description Preliminary Product Description is a high linearity PA /Linear Driver with low noise figure (NF). It delivers excellent P1dB, IP3 and NF over a wide range of frequencies with fractional bandwidths of roughly

More information

Headset/Speaker EMI Filter with ESD Protection CM1416/D. Features. Product Description. Applications. ±30kV ESD protection on each channel per

Headset/Speaker EMI Filter with ESD Protection CM1416/D. Features. Product Description. Applications. ±30kV ESD protection on each channel per Headset/Speaker EMI Filter with ESD Protection CM1416 Features Functionally and pin compatible with the CSPEMI201A and CM1411 OptiGuard coated for improved reliability at assembly Two channels of EMI filtering

More information

MBC13720 SiGe:C Low Noise Amplifier with Bypass Switch Device

MBC13720 SiGe:C Low Noise Amplifier with Bypass Switch Device Freescale Semiconductor Data Sheet: Technical Data Document Number: MBC13720 Rev. 4, 09/2011 MBC13720 MBC13720 SiGe:C Low Noise Amplifier with Bypass Switch Device MBC13720NT1 1 1 Refer to Table 1. Package

More information

Prepared by: Jim Lepkowski ON Semiconductor

Prepared by: Jim Lepkowski ON Semiconductor Application Hints for Transient Voltage Suppression Diode Circuits Prepared by: Jim Lepkowski ON Semiconductor APPLICATION NOTE INTRODUCTION Transient Voltage Suppression (TVS) diodes provide a simple

More information

XRD87L85 Low-Voltage CMOS 8-Bit High-Speed Analog-to-Digital Converter

XRD87L85 Low-Voltage CMOS 8-Bit High-Speed Analog-to-Digital Converter Low-Voltage CMOS 8-Bit High-Speed Analog-to-Digital Converter April 2002-1 FEATURES 8-Bit Resolution Up to 10 MHz Sampling Rate Internal S/H Function Single Supply: 3.3V VIN DC Range: 0V to V DD VREF DC

More information

Low Voltage Bandgap References and High PSRR Mechanism

Low Voltage Bandgap References and High PSRR Mechanism Low Voltage Bandgap References and High PSRR Mechanism Vahe Arakelyan 2nd year Master Student Synopsys Armenia Educational Department, State Engineering University of Armenia Moscow March 21-24, 2011 Outline

More information

1 GHz wideband low-noise amplifier with bypass. The LNA is housed in a 6-pin SOT363 plastic SMD package.

1 GHz wideband low-noise amplifier with bypass. The LNA is housed in a 6-pin SOT363 plastic SMD package. Rev. 2 14 September 2010 Product data sheet 1. Product profile 1.1 General description The MMIC is a wideband amplifier with. It is designed specifically for high linearity, low-noise applications over

More information

ESD Protection Scheme for I/O Interface of CMOS IC Operating in the Power-Down Mode on System Board

ESD Protection Scheme for I/O Interface of CMOS IC Operating in the Power-Down Mode on System Board ESD Protection Scheme for I/O Interface of CMOS IC Operating in the Power-Down Mode on System Board Kun-Hsien Lin and Ming-Dou Ker Nanoelectronics and Gigascale Systems Laboratory Institute of Electronics,

More information

GRF2541. Preliminary High Gain, Ultra-LNA w/bypass ac: GHz. Product Description. Features. Applications

GRF2541. Preliminary High Gain, Ultra-LNA w/bypass ac: GHz. Product Description. Features. Applications Product Description GRF2541 is an ultra-low noise amplifier (LNA) with bypass designed for IEEE 802.11a/n/ac/p applications in the 5GHz band (5.1 GHz to 5.925 GHz). The device exhibits outstanding de-embedded

More information

GRF2505. Released. Broadband LNA/Linear Driver 4.0 to 6.0 GHz. Product Description. Features. Applications

GRF2505. Released. Broadband LNA/Linear Driver 4.0 to 6.0 GHz. Product Description. Features. Applications Product Description is a broadband, ultra-low noise, linear amplifier offering the highest levels of performance for demanding 802.11ac and wireless backhaul LNA and PA driver applications. Features Reference:

More information

GRF2243. Preliminary. LNA with Bypass Tuning Range: 0.1 to 5.0 GHz. Product Description. Features. Applications

GRF2243. Preliminary. LNA with Bypass Tuning Range: 0.1 to 5.0 GHz. Product Description. Features. Applications Product Description Features Reference: 3.3V/15mA/2.5 GHz Gain: 19.8 db EVB NF: 0.75 db is a low noise amplifier (LNA) with low loss bypass which requires only a single control input. It is designed for

More information

TABLE OF CONTENTS 1.0 PURPOSE INTRODUCTION ESD CHECKS THROUGHOUT IC DESIGN FLOW... 2

TABLE OF CONTENTS 1.0 PURPOSE INTRODUCTION ESD CHECKS THROUGHOUT IC DESIGN FLOW... 2 TABLE OF CONTENTS 1.0 PURPOSE... 1 2.0 INTRODUCTION... 1 3.0 ESD CHECKS THROUGHOUT IC DESIGN FLOW... 2 3.1 PRODUCT DEFINITION PHASE... 3 3.2 CHIP ARCHITECTURE PHASE... 4 3.3 MODULE AND FULL IC DESIGN PHASE...

More information

Product Datasheet Revision: April 2014

Product Datasheet Revision: April 2014 ALP8 8 GHz Product Datasheet Revision: April 1 Applications W-Band Imaging Sensors Radar X =.mm Y =.8mm Product Features RF frequency: 8 GHz Broadband Operation Linear gain: 9 db, typical Noise Figure:

More information

GRF3014. Preliminary. Broadband Gain Block Near DC to 9.0 GHz. Product Description. Features. Applications

GRF3014. Preliminary. Broadband Gain Block Near DC to 9.0 GHz. Product Description. Features. Applications Product Description is a broadband gain block designed for applications up to 9.0 GHz exhibiting flat gain over the band. Features Reference: 5.0V/45mA/5.0 GHz Gain: 10.0 db OP1dB: 12.4 dbm OIP3: 26.0

More information

CHAPTER 5. Voltage Regulator

CHAPTER 5. Voltage Regulator CHAPTER 5 Voltage Regulator In your robot, the energy is derived from batteries. Specifically, there are two sets of batteries wired up to act as voltage sources; a 9V battery, and two 1.5V batteries in

More information

SKY : 2.4 GHz Low-Noise Amplifier

SKY : 2.4 GHz Low-Noise Amplifier DATA SHEET SKY65405-21: 2.4 GHz Low-Noise Amplifier Applications 802.11b/g/n PC cards, NICs, and USB dongles 802.11b/g/n tablets 802.11b/g/n access points, routers, and gateways 2.4 GHz ISM radios V_ENABLE

More information

GRF4002. Released. Broadband LNA/Linear Driver GHz. Product Description. Features. Applications

GRF4002. Released. Broadband LNA/Linear Driver GHz. Product Description. Features. Applications Product Description Features Reference: 5V/70mA/2.5 GHz EVB NF: 0.85 db Gain: 15.0 db OP1dB: 23.5 dbm OIP3: 36.5 dbm is a broadband low noise gain block designed for small cell, wireless infrastructure

More information

GRF4002. Broadband LNA/Linear Driver GHz. Features. Applications. Preliminary. Product Description

GRF4002. Broadband LNA/Linear Driver GHz. Features. Applications. Preliminary. Product Description Broadband LNA/Linear Driver 0.1-3.8 GHz Package: 1.5 x 1.5 mm DFN-6 Product Description Features 0.1 GHz to 3.8 GHz (Single Match) NF: 0.75 db @ 2.5 GHz Gain: 15.0 db @ 2.5 GHz OIP3: +37.0 dbm @ 2.5 GHz

More information

HiPAC High Performance Actives & Passives on Chip

HiPAC High Performance Actives & Passives on Chip HiPAC High Performance Actives & Passives on Chip Passive Integration on Silicon Solutions & Target Components to be integrated Solutions Resistors Inductors Transformers Capacitors Diodes Transistors

More information

ESD Protection Device and Circuit Design for Advanced CMOS Technologies

ESD Protection Device and Circuit Design for Advanced CMOS Technologies ESD Protection Device and Circuit Design for Advanced CMOS Technologies Oleg Semenov Hossein Sarbishaei Manoj Sachdev ESD Protection Device and Circuit Design for Advanced CMOS Technologies Authors: Oleg

More information

AS CMOS technologies advanced, the radio-frequency

AS CMOS technologies advanced, the radio-frequency 554 IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, VOL. 12, NO. 3, SEPTEMBER 2012 Design of Compact ESD Protection Circuit for V-Band RF Applications in a 65-nm CMOS Technology Chun-Yu Lin, Member,

More information

Agilent 1GC GHz Integrated Diode Limiter TC231P Data Sheet

Agilent 1GC GHz Integrated Diode Limiter TC231P Data Sheet Agilent 1GC1-8235 0-20 GHz Integrated Diode Limiter TC231P Data Sheet Features Two Independent Limiters for Single ended or Differential Signals Can be Biased for Adjustable Limit Level and Signal Detection

More information

G IP3=38. P1dB= Single. Units

G IP3=38. P1dB= Single. Units Product Description SG0 SG0 is a high performance InGaP HBT amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature

More information

GRF4200. Preliminary. High Gain, Linear Driver Tuning Range: GHz. Product Description. Features. Applications

GRF4200. Preliminary. High Gain, Linear Driver Tuning Range: GHz. Product Description. Features. Applications Product Description Features Reference: 5V/35mA/1.9 GHz EVB NF: 4.0 db Gain: 21.5 db OP1dB: 18.0 dbm is a linear gain block designed for small cell, wireless infrastructure and other high performance applications.

More information

Enables prolonged battery life. Saves DC power consumption when it is not reguired.

Enables prolonged battery life. Saves DC power consumption when it is not reguired. Ultra Low Noise, Low Current, Shutdown Monolithic Amplifier 50Ω 10 to 13 GHz The Big Deal Ultra-low noise figure, 1.3 db Low Current, 13 ma at 3V and 29mA at 5V Excellent ESD protection, Class 1C Small

More information

Impact of Voltage Overshoots on ESD Protection Effectiveness for High Voltage Applications

Impact of Voltage Overshoots on ESD Protection Effectiveness for High Voltage Applications 1 technische universität dortmund International ESD Workshop: 2010 Impact of Voltage Overshoots on ESD Protection Effectiveness for High Voltage Applications Yiqun Cao 1,2, Ulrich Glaser 1, Alevtina Podgaynaya

More information

Low Current, High Performance NPN Silicon Bipolar Transistor. Technical Data AT AT-32033

Low Current, High Performance NPN Silicon Bipolar Transistor. Technical Data AT AT-32033 Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-311 AT-333 Features High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation 9 MHz Performance:

More information

Low-Capacitance, 2/3/4/6-Channel, ±15kV ESD Protection Arrays for High-Speed Data Interfaces

Low-Capacitance, 2/3/4/6-Channel, ±15kV ESD Protection Arrays for High-Speed Data Interfaces 9-739; Rev 5; 6/ General Description The are low-capacitance ±5kV ESD-protection diode arrays designed to protect sensitive electronics attached to communication lines. Each channel consists of a pair

More information

ESD Protection Design for 60-GHz LNA With Inductor-Triggered SCR in 65-nm CMOS Process

ESD Protection Design for 60-GHz LNA With Inductor-Triggered SCR in 65-nm CMOS Process 714 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 60, NO. 3, MARCH 2012 ESD Protection Design for 60-GHz LNA With Inductor-Triggered SCR in 65-nm CMOS Process Chun-Yu Lin, Member, IEEE, Li-WeiChu,

More information

IEC (EFT) 40A

IEC (EFT) 40A Features ESD Protect for high-speed I/O channels Provide ESD protection for each channel to IEC 61000-4- (ESD) ±1kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) 40A (/0ns) IEC 61000-4- (Lightning) 1A (8/0µs)

More information

PART TOP VIEW ADDR2 ADDR3 ADDR4 SELECT S/H CONFIG V L DGND V SS AGND IN N.C. Maxim Integrated Products 1

PART TOP VIEW ADDR2 ADDR3 ADDR4 SELECT S/H CONFIG V L DGND V SS AGND IN N.C. Maxim Integrated Products 1 9-674; Rev ; 4/ 32-Channel Sample/Hold Amplifier General Description The MAX568 contains 32 sample/hold amplifiers and four -of-8 multiplexers. The logic controlling the muxes and sample/hold amplifiers

More information

AZC099-04S 4 IEC (ESD)

AZC099-04S 4 IEC (ESD) Features ESD Protect for 4 high-speed I/O channels Provide ESD protection for each channel to IEC 000-4- (ESD) ±kv (air), ±8kV (contact) IEC 000-4-4 (EFT) (/0ns) Level-3, 0A for I/O, 40A for Power IEC

More information

1000 Base-T, ±15kV ESD Protection LAN Switches

1000 Base-T, ±15kV ESD Protection LAN Switches 19-0624; Rev 0; 8/06 1000 Base-T, ±15kV ESD Protection LAN Switches General Description The meet the needs of high-speed differential switching. The devices handle the needs of Gigabit Ethernet (10/100/1000)

More information

RClamp TM 0504M RailClamp Low Capacitance TVS Diode Array PRELIMINARY Features

RClamp TM 0504M RailClamp Low Capacitance TVS Diode Array PRELIMINARY Features Description RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The RClamp series has been specifically designed to protect sensitive components which are connected

More information

1000 Base-T, ±15kV ESD Protection LAN Switch

1000 Base-T, ±15kV ESD Protection LAN Switch 19-0841; Rev 0; 6/07 1000 Base-T, ±15kV ESD Protection LAN Switch General Description The meets the needs of high-speed differential switching, including that of Gigabit Ethernet (10/100/1000) Base-T switching

More information

PAPER MOS-Bounded Diodes for On-Chip ESD Protection in Deep Submicron CMOS Process

PAPER MOS-Bounded Diodes for On-Chip ESD Protection in Deep Submicron CMOS Process IEICE TRANS. ELECTRON., VOL.E88 C, NO.3 MARCH 2005 429 PAPER MOS-Bounded Diodes for On-Chip ESD Protection in Deep Submicron CMOS Process Ming-Dou KER a), Kun-Hsien LIN, and Che-Hao CHUANG, Nonmembers

More information

NANOSCALE CMOS technologies have been used to implement

NANOSCALE CMOS technologies have been used to implement IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 62, NO. 11, NOVEMBER 2014 2723 Design of ESD Protection Diodes With Embedded SCR for Differential LNA in a 65-nm CMOS Process Chun-Yu Lin, Member,

More information

= 25 C) of Demonstration Amplifier. Parameter 500 MHz 1.0 GHz 1.5 GHz 2.0 GHz 2.5 GHz Units. Small Signal Gain

= 25 C) of Demonstration Amplifier. Parameter 500 MHz 1.0 GHz 1.5 GHz 2.0 GHz 2.5 GHz Units. Small Signal Gain Rev 5.0 May 2015 CGH40090PP 90 W, RF Power GaN HEMT Cree s CGH40090PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers

More information

HL2430/2432/2434/2436

HL2430/2432/2434/2436 Features Digital Unipolar Hall sensor High chopping frequency Supports a wide voltage range - 2.5 to 24V - Operation from unregulated supply Applications Flow meters Valve and solenoid status BLDC motors

More information

+14dBm to +20dBm LO Buffers/Splitters with ±1dB Variation

+14dBm to +20dBm LO Buffers/Splitters with ±1dB Variation -24; Rev 2; 3/4 +dbm to +dbm LO Buffers/Splitters General Description The MAX9987 and MAX9988 LO buffers/splitters each integrate a passive two-way power splitter with highisolation input and output buffer

More information

Digital Fundamentals. Integrated Circuit Technologies

Digital Fundamentals. Integrated Circuit Technologies Digital Fundamentals Integrated Circuit Technologies 1 Objectives Determine the noise margin of a device from data sheet parameters Calculate the power dissipation of a device Explain how propagation delay

More information

SCR Device With Double-Triggered Technique for On-Chip ESD Protection in Sub-Quarter-Micron Silicided CMOS Processes

SCR Device With Double-Triggered Technique for On-Chip ESD Protection in Sub-Quarter-Micron Silicided CMOS Processes 58 IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, VOL. 3, NO. 3, SEPTEMBER 2003 SCR Device With Double-Triggered Technique for On-Chip ESD Protection in Sub-Quarter-Micron Silicided CMOS Processes

More information

CM DE. 4-Channel LCD and Camera EMI Filter Array with ESD Protection

CM DE. 4-Channel LCD and Camera EMI Filter Array with ESD Protection CM1408-04DE 4-Channel LCD and Camera EMI Filter Array with ESD Protection Features Four Channels of EMI Filtering with Integrated ESD Protection Pi Style EMI Filters in a Capacitor Resistor Capacitor (C

More information

MMS006AA Datasheet DC 20 GHz GaAs MMIC SP2T Non-Reflective Switch

MMS006AA Datasheet DC 20 GHz GaAs MMIC SP2T Non-Reflective Switch MMS006AA Datasheet DC 20 GHz GaAs MMIC SP2T Non-Reflective Switch Microsemi Corporate Headquarters One Enterprise, Aliso Viejo, CA 92656 USA Within the USA: +1 (800) 713-4113 Outside the USA: +1 (949)

More information

CDMSP M Surface Mount TVS Diode Array

CDMSP M Surface Mount TVS Diode Array *RoHS COMPLIANT Features RoHS compliant* Protects four I/O lines Ultra-low capacitance ~.55 pf ESD protection > kv Surge protection Applications High Definition Multimedia Interface (HDMI) Digital Visual

More information

GRF2073-W. Preliminary. Ultra-LNA: SDARS/Compenser/GPS. Product Description. Features. Automotive Applications

GRF2073-W. Preliminary. Ultra-LNA: SDARS/Compenser/GPS. Product Description. Features. Automotive Applications Product Description Features Reference: 5V/70 ma/2332.5 MHz Gain: 20.5 db NF: 0.40 db OP1dB: 19.8 dbm OIP3: 35.0 dbm is a linear, ultra-low noise amplifier designed for automotive satellite radio multi-stage

More information

GRF2083. Preliminary. Ultra-LNA with Shutdown Tuning Range: 3.0 to 6.0 GHz. Product Description. Features. Applications

GRF2083. Preliminary. Ultra-LNA with Shutdown Tuning Range: 3.0 to 6.0 GHz. Product Description. Features. Applications Product Description Features Reference: 5V/70 ma/3.6 GHz Gain: 17.8 db Eval Board NF: 0.65 db OP1dB: 19.5 dbm OIP3: 36.5 dbm High Isolation Shut Down State Flexible Bias Voltage is a broadband, linear,

More information

CM1409. LCD and Camera EMI Filter Array with ESD Protection

CM1409. LCD and Camera EMI Filter Array with ESD Protection LCD and Camera EMI Filter Array with ESD Protection Product Description The CM1409 is a family of pi style EMI filter arrays with ESD protection, which integrates either six or eight filters (C R C) in

More information

ESD AND OVERVOLTAGE PROTECTION ISSUES IN MODERN IC TECHNOLOGY. Master of Science. VLSI and Embedded Systems

ESD AND OVERVOLTAGE PROTECTION ISSUES IN MODERN IC TECHNOLOGY. Master of Science. VLSI and Embedded Systems ESD AND OVERVOLTAGE PROTECTION ISSUES IN MODERN IC TECHNOLOGY A Thesis submitted in partial fulfillment for the award of degree of Master of Science in VLSI and Embedded Systems Submitted by, Akshaykumar

More information

EM8D-100L EMI FILTER/TVS ARRAY DESCRIPTION DFN-16 PACKAGE FEATURES APPLICATIONS MECHANICAL CHARACTERISTICS CIRCUIT DIAGRAM & PIN CONFIGURATION

EM8D-100L EMI FILTER/TVS ARRAY DESCRIPTION DFN-16 PACKAGE FEATURES APPLICATIONS MECHANICAL CHARACTERISTICS CIRCUIT DIAGRAM & PIN CONFIGURATION EMI FILTER/TVS ARRAY DESCRIPTION The is a DFN-16, 8 line low pass filter array with integrated TVS diodes. The is designed to suppress unwanted EMI/RFI signals and provide ESD protection for high-speed

More information

MAX2009/MAX2010 Evaluation Kits

MAX2009/MAX2010 Evaluation Kits 19-2972; Rev 0; 9/03 MAX2009/MAX2010 Evaluation Kits General Description The MAX2009/MAX2010 evaluation kits (EV kits) simplify the evaluation of the MAX2009 and MAX2010. These kits are fully assembled

More information

AZC002-02N Low Capacitance ESD Protection Array For High Speed Data Interfaces Features IEC (ESD) ±15kV (air), ±8kV (contact)

AZC002-02N Low Capacitance ESD Protection Array For High Speed Data Interfaces Features IEC (ESD) ±15kV (air), ±8kV (contact) Features ESD Protect for 2 high-speed I/O channels Provide ESD protection for each channel to IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) (5/50ns) Level-3, 20A for I/O, 40A for

More information

General Purpose, Low Noise NPN Silicon Bipolar Transistor. Technical Data AT AT-41533

General Purpose, Low Noise NPN Silicon Bipolar Transistor. Technical Data AT AT-41533 General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data AT-411 AT-433 Features General Purpose NPN Bipolar Transistor 9 MHz Performance: AT-411: 1 db NF,. db G A AT-433: 1 db NF, 14. db

More information

Latch-Up. Parasitic Bipolar Transistors

Latch-Up. Parasitic Bipolar Transistors Latch-Up LATCH-UP CIRCUIT Latch-up is caused by an SCR (Silicon Controlled Rectifier) circuit. Fabrication of CMOS integrated circuits with bulk silicon processing creates a parasitic SCR structure. The

More information

Typical Performance 1. 2 OIP3 _ measured with two tones at an output of 0 dbm per tone separated by 1 MHz. RFout

Typical Performance 1. 2 OIP3 _ measured with two tones at an output of 0 dbm per tone separated by 1 MHz. RFout Device Features 3 ~ 3.3V supply No Dropping Resistor Required No matching circuit needed Lead-free/Green/RoHS compliant SOT-343 package Product Description BeRex s BGS6 is a high SiGe HBT MMIC amplifier,

More information

LCD & Camera EMI Filter Array with ESD Protection

LCD & Camera EMI Filter Array with ESD Protection LD & amera EMI Filter rray with ESD Protection PRELIMINRY Features Six and eight channels of EMI filtering Utilizes Praetorian inductor-based design technology for true L- filter implementation OptiGuard

More information

SiGe:C Low Noise High Linearity Amplifier

SiGe:C Low Noise High Linearity Amplifier Rev. 2 21 February 212 Product data sheet 1. Product profile 1.1 General description The is a low noise high linearity amplifier for wireless infrastructure applications.the LNA has a high input and output

More information

SRV05-4 RailClamp Low Capacitance TVS Diode Array

SRV05-4 RailClamp Low Capacitance TVS Diode Array Description RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The SR series has been specifically designed to protect sensitive components which are connected to data

More information

PESDR0554S2. 4-Line Low Capacitance TVS Diode Array. Mechanical Characteristics. Description. Applications. Features. Ordering Information

PESDR0554S2. 4-Line Low Capacitance TVS Diode Array. Mechanical Characteristics. Description. Applications. Features. Ordering Information 4-Line Low Capacitance TVS Diode Array Description The is a low capacitance TVS array, utilizing leading monolithic silicon technology to provide fast response time and low ESD clamping voltage, making

More information

ESD Protection Design for Mixed-Voltage I/O Interfaces -- Overview

ESD Protection Design for Mixed-Voltage I/O Interfaces -- Overview ESD Protection Design for Mixed-Voltage Interfaces -- Overview Ming-Dou Ker and Kun-Hsien Lin Abstract Electrostatic discharge (ESD) protection design for mixed-voltage interfaces has been one of the key

More information

Broadband system applications i.e. WCDMA, CATV, etc. General purpose Voltage Controlled Attenuators for high linearity applications

Broadband system applications i.e. WCDMA, CATV, etc. General purpose Voltage Controlled Attenuators for high linearity applications Rev. 2 6 March 2012 Product data sheet 1. Product profile 1.1 General description Quad PIN diode in a SOT753 package. 1.2 Features and benefits 4 PIN diodes in a SOT753 package 300 khz to 4 GHz High linearity

More information

CM1621. LCD and Camera EMI Filter Array with ESD Protection

CM1621. LCD and Camera EMI Filter Array with ESD Protection LCD and Camera EMI Filter Array with ESD Protection Features Six Channels of EMI Filtering with Integrated ESD Protection Pi Style EMI Filters in a Capacitor Resistor Capacitor (C R C) Network ±15 kv ESD

More information

AN BGA GHz 18 db gain wideband amplifier MMIC. Document information. Keywords. BGA3018, Evaluation board, CATV, Drop amplifier.

AN BGA GHz 18 db gain wideband amplifier MMIC. Document information. Keywords. BGA3018, Evaluation board, CATV, Drop amplifier. Rev. 2 8 January 2013 Application note Document information Info Keywords Abstract Content BGA3018, Evaluation board, CATV, Drop amplifier This application note describes the schematic and layout requirements

More information

Single Channel Protector in a SOT-23 Package and a MSOP Package ADG465

Single Channel Protector in a SOT-23 Package and a MSOP Package ADG465 Data Sheet Single Channel Protector in a SOT-23 Package and a MSOP Package FEATURES Fault and overvoltage protection up to ±40 V Signal paths open circuit with power off Signal path resistance of RON with

More information