ATP Industrial Grade Horizontal SATA DOM Specification
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1 Version 3.1 ATP Electronics, Inc.
2 CONTENT Disclaimer... 1 Revision History ATP Industrial Grade Horizontal SATA DOM Overview ATP Product Image Introduction Main Features Product Specification Block Diagram Environment Specifications IOPS Performance Maximum Read/Write Performance Electrical Characteristics Reliability Write/Erase Endurance Certification and compliance SATA DOM Pin Assignment Pin Location Pin Assignment Command Set ATA Command Set Identity Device Data Smart Information Smart Subcommand Sets SMART Read Data (Subcommand Doh) SMART Attribute Mechanical Information Physical Dimension Specifications Mechanical Form Factor (Units in mm) ATP Electronics, Inc.
3 Disclaimer ATP Electronics Inc. shall not be liable for any errors or omissions that may appear in this document, and disclaims responsibility for any consequences resulting from the use of the information set forth herein. ATP may make changes to specifications and product descriptions at any time, without notice. The information in this paper is furnished for informational use only so ATP assumes no responsibility or liability for any errors or inaccuracies that may appear in this document. All parts of the ATP documentation are protected by copyright law and all rights are reserved. This documentation may not, in whole or in part, be copied, photocopied, reproduced, translated, or reduced to any electronic medium or machine-readable form without prior consent, in writing, from ATP Electronics, Inc. The information set forth in this document is considered to be Proprietary and Confidential property owned by ATP. Copyright ATP All rights reserved. Revision History Date Version Revision History May 30 th, New BOM Release Mar. 17 th, Removed Full Disk Encryption feature - Update ATP branch office information - Added feature descriptions of PowerProtector and AutoRefresh ATP Confidential ATP Electronics, Inc. Page 1 of 18
4 1.0 ATP Industrial Grade Horizontal SATA DOM Overview 1.1 ATP Product Image Figure 1-1: ATP Product Image (reference only) Note: ATP P/N AF2GSSEI-RABXP AF4GSSEI-RACXP AF8GSSEI-RACXP AF16GSSEI-RACXP GB = 1,000,000,000 Byte Table 1-1: Capacities CAPACITY 2GB 4GB 8GB 16GB ATP Confidential ATP Electronics, Inc. Page 2 of 18
5 1.2 Introduction The ATP Industrial Grade Horizontal SATA DOM is a high performance and high capacity mass storage solution in mini form factor. Utilizing SLC (Single Level Cell) NAND flash components, ATP Industrial Grade Horizontal SATA DOM provides outstanding performance and proven reliability for products operating. ATP Industrial Grade Horizontal SATA DOM is perfect for industrial applications such as transportation, industrial PC, healthcare, telecommunications, and other harsh environments where data integrity and consistent performance is mission critical. 1.3 Main Features Capacity: 2GB~16GB SLC (Single Level Cell) NAND flash memory Operating temperature: -40 to 85 Maximum performance: Sequential read up to 80 MB/s, sequential write up to 65 MB/s Compliant with Serial ATA Revision 2.6. Support PIO mode 0~4, MDMA mode 0~2, UDMA mode 0~6 Compatible with SATA 1.5Gbps and SATA 3Gbps interface rate Hardware BCH ECC, correct up to 24-bit ECC per 1024 bytes of data SMART function support by ATA CMD Enhanced endurance by Global wear-leveling AutoRefresh, automatic data protection in read operation PowerProtector Gen. 2, data integrity under power-cycling CE, FCC certification ATP Confidential ATP Electronics, Inc. Page 3 of 18
6 PowerProtector Power Cycling Protection The unstable power conditions of outdoor applications such as transportation, telecommunications/networking and embedded systems run the risk of data loss and drive corruption during a sudden power failure. A standalone hardware design is the ideal configuration for power backup, ensuring a sufficient amount of reserve power during any power abnormalities and minimizing the consequent host re-designs for adding new features. During a sudden power failure, the abnormality is discovered by a power loss detection circuit and activates the power protection mechanism. The device then draws power from power protection reservoir, where the reserve power is stored. The reserve power gives enough time for the flash device to conclude the last writing command without losing any data. AutoRefresh Technology Data Integrity Protection Over time the error bits accumulate to the threshold in the flash memory cell and eventually become uncorrectable despite using the ECC engine. In the traditional handling method, the data is moved to a different location in the flash memory; despite the corrupted data is beyond repaired before the transition. The situation is worse in frequent read applications, such as navigation systems or OS boot-up devices. The map or operation system is preloaded into the storage media and there may be one time write and following by read operation only. Read disturbance is the result of electrical interference from multiple read operations in surrounding pages. After NAND flash accumulates 100,000 read cycles, uncorrectable ECC errors may occur in the affected pages which results in data failure in the same block. To prevent data corruption, ATP memory product monitors the error bit levels in each read operation; when it reaches the preset threshold value, AutoRefresh is activated by programming the data into another block before the data is corrupted. After the re-programming operation is completed, the controller reads the data and compares the data/parity to ensure data integrity. Owing to different user experiences, please contact ATP for AutoRefresh in real applications. ATP Confidential ATP Electronics, Inc. Page 4 of 18
7 2.0 Product Specification 2.1 Block Diagram ATP Industrial Grade Horizontal SATA DOM consists of below functional blocks. The advanced architecture is optimized to provide highest data reliability and transfer performance. Figure 2-1: ATP SATA DOM Embedded Module SATA Host Device SATA II controller High Performance Processor Core SRAM ROM ECC Engine Flash SLC NAND Flash Controller Memory Voltage Regulator (5V to 3.3V/ 1.8V) 2.2 Environment Specifications Table 2-1 Type Standard Temperature Operating -40 o C to 85 o C Non-Operating -40 o C to 85 o C Humidity Operating 25 o C, 8% to 95%, noncondensing Non-Operating 40 o C, 8% to 93%, noncondensing Vibration Operating sine 16.4G, 10~2000Hz Shock Operating Half sine 1500G/0.5ms Altitude Operating Non-Operating 80,000 feet Max. 80,000 feet Max. ATP Confidential ATP Electronics, Inc. Page 5 of 18
8 2.3 IOPS Performance Type 4K Random Read IOPS Table 2-2 Up to 3,500 IOPS Value Note: IOPS: Input/Output operations per second tested by I/O meter on highest density. 2.4 Maximum Read/Write Performance Crystal Disk Mark Table 2-3 Type 2GB 4GB 8GB 16GB Sequential Read (MB/s) Sequential Write(MB/s) Electrical Characteristics Table 2-4 Parameter Symbol Min Typ Max Unit Remark Supply voltage V CC V Table2-5 Parameter Symbol Min Typ Max Unit Remark Sustained write power P W W RMS value Sustained read power P R W RMS value Idle power P S W RMS value 2.6 Reliability Type MTBF (@ 25 o C) 1 Table2-6 >2,000,000 hours Value Data Retention (@ 40 o C) 10 years (with 10% P/E cycle) Notes: The Mean Time between Failures (MTBF) is calculated using a prediction methodology, Telcordia SR-332, which based on reliability data of the individual components in the SATA DOM. It assumes nominal voltage, with all other parameters within specified range. ATP Confidential ATP Electronics, Inc. Page 6 of 18
9 2.7 Write/Erase Endurance 1 Table 2-7 ATP Industrial Grade Horizontal SATA DOM Specification Type Endurance Technology SSD Endurance Value Enhanced global dynamic and static wear-leveling algorithm SLC Flash block in 2/4GB versions: 60,000 P/E cycles SLC Flash block in 8/16GB versions: 100,000 P/E cycles 2GB: 24TB random write 48TB sequential write 4GB: 48TB random write 96TB sequential write 8GB: 160TB random write 320TB sequential write 16GB: 320TB random write 640TB sequential write Note: Endurance for the SATA DOM can be predicted based on the usage conditions applied to the device, the internal NAND component cycles, the write amplification factor, and the wear leveling efficiency of the drive. 2.8 Certification and compliance Table 2-9 Mark/Approval Documentation Certification The CE marking (also known as CE mark) is a mandatory conformance mark on many products placed on the single market in the European Economic Area (EEA). The CE marking certifies that a product has met Yes EU consumer safety, health or environmental requirements. CE stands for Conformité Européenne, "European conformity" in French. FCC Part 15 Class B was used for Evolution of United States (US) Emission Standards for Commercial Electronic Products, The United States (US) covers all types of unintentional radiators under Subparts A and B Yes (Sections 15.1 through ) of FCC 47 CFR Part 15, usually called just FCC Part 15 ATP Confidential ATP Electronics, Inc. Page 7 of 18
10 3.0 SATA DOM Pin Assignment 3.1 Pin Location The following figure shows the pin location of both signal and power connectors of SATA DOM. P2 P1 S1 S7 Figure Pin Assignment There are total of 7 pins in the signal segment and 2 pins in the power segment. The pin definitions are shown in Table 3-1 Table 3-1 Group Pin No. 1 Function Description S1 GND Ground S2 A+ Differential signal pair A S3 A- Signal S4 GND Ground Segment S5 B- Differential signal pair B S6 B+ S7 GND Ground Power Segment P1 Vcc 5V power input P2 GND Ground Notes: Signal Pin with a 1.27 mm pitch. Power Pin with a 1.25 mm pitch ATP Confidential ATP Electronics, Inc. Page 8 of 18
11 Long cable Group No. Function Description C1 C1 1,2 NC No connect 3 GND Ground 4 Vcc 5V power 1 Vcc 5V power 2 GND Ground Short cable Group No. Function Description C1 C2 1 Vcc 5V power 2 GND Ground 1 Vcc 5V power 2 GND Ground 4.0 Command Set 4.1 ATA Command Set ATP Industrial Grade SATA DOM support the commands show in the following table Table 4-1 Command Code Protocol General Feature Set Execute Drive Diagnostic 90h Device diagnostic Flush Cache E7h Non-data Identify Device ECh PIO data-in ATP Confidential ATP Electronics, Inc. Page 9 of 18
12 Command Code Protocol Initialize Drive Parameters 91h Non-data Read DMA C8h DMA Read Multiple C4h PIO data-in Read Sector(s) 20h or 21h PIO data-in Read Verify Sector(s) 40h or 41h Non-data Set Feature EFh Non-data Set Multiple Mode C6h Non-data Write DMA CAh DMA Write Multiple C5h PIO data-out Write Sector(s) 30h or 31h PIO data-out NOP 00h Non-data Read Buffer E4h PIO data-in Write Buffer E8h PIO data-out Power Management Feature Set Check Power Mode E5h or 98h Non-data Idle E3h or 97h Non-data Idle Immediate E1h or 95h Non-data Sleep E6h or 99h Non-data Standby E2h or 96h Non-data Standby Immediate E0h or 94h Non-data Security Mode Feature Set Security Set Password F1h PIO data-out Security Unlock F2h PIO data-out Security Erase Prepare F3h Non-data Security Erase Unit F4h PIO data-out Security Freeze Lock F5h Non-data Security Disable Password F6h PIO data-out SMART Feature Set SMART Disable Operation B0h Non-data SMART Enable/Disable Autosave B0h Non-data SMART Enable Operations B0h Non-data SMART Return Status B0h Non-data SMART Execute Off-Line Immediate B0h Non-data SMART Read Data B0h PIO data-in SMART Read Threshold B0h PIO data-in ATP Confidential ATP Electronics, Inc. Page 10 of 18
13 Command Code Protocol SMART Save Attribute Values B0h Non-data Host Protected Area Feature Set Read Native Max Address F8h Non-data Set Max Address F9h Non-data Set Max Set Password F9h PIO data-out Set Max Lock F9h Non-data Set Max Freeze Lock F9h Non-data Set Max Unlock F9h PIO data-out 4.2 Identity Device Data Word Address Default Value Total Bytes 0 044Ah 2 General Configuration Data Field Type Information 1 XXXXh 2 Default number of cylinders h 2 Reserved 3 00XXh 2 Default number of heads h 2 Obsolete h 2 Obsolete 6 XXXXh 2 Default number of sectors per track 7-8 XXXXh h 2 Obsolete Number of sectors per card (Word 7 = MSW, Word 8 = LSW) XXXXh 20 Serial number in ASCII (Right justified) h 2 Obsolete h 2 Obsolete h 2 Obsolete XXXXh 8 Firmware revision in ASCII. Big Endian Byte Order in Word XXXXh 40 Model number in ASCII (Left justified) Big Endian Byte Order in Word h 2 Maximum number of sectors on Read/Write Multiple command h 2 Reserved 49 0F00h 2 Capabilities h 2 Capabilities h 2 PIO data transfer cycle timing mode ATP Confidential ATP Electronics, Inc. Page 11 of 18
14 Word Default Value Total Address Bytes h 2 Obsolete h 2 Field validity Data Field Type Information 54 XXXXh 2 Current numbers of cylinders 55 XXXXh 2 Current numbers of heads 56 XXXXh 2 Current sectors per track XXXXh 4 Current capacity in sectors (LBAs) (Word57=LSW, Word58=MSW) h 2 Multiple sector setting XXXXh h 2 Reserved h 2 Total number of sectors addressable in LBA Mode (Word60=LSW, Word61=MSW) Multiword DMA transfer Supports MDMA Mode 0, 1, and h 2 Advanced PIO modes supported h 2 Minimum Multiword DMA transfer cycle time per word h 2 Recommended Multiword DMA transfer cycle time h 2 Minimum PIO transfer cycle time without flow control h 2 Minimum PIO transfer cycle time with lordy flow control 69~ h Reserved h Queue depth Serial ATA capabilities 0006h Support Serial ATA Gen Support Serial ATA Gen2 0206h Support receipt of host-initiated interface power management requests h 2 Reserved h 2 SMART Read Data h 2 Reserved 80 01FCh 2 Major version number (ATA8-ACS) h 2 Minor version number Bh 2 Command sets supported h 2 Command sets supported h 2 Command sets supported 2 85~87 XXXXh 6 Command set/feature enabled ATP Confidential ATP Electronics, Inc. Page 12 of 18
15 Word Default Value Total Data Field Type Information Address Bytes Fh 2 Ultra DMA supported and selected h 2 Time required for Security erase unit completion h 2 Time required for Enhanced security erase unit completion h 2 Current Advanced power management value 92 FFFEh 2 Master Password Revision Code 93~ h 70 Reserved h 2 Security status 129~ h 62 Vendor unique bytes h 2 Power requirement description h 2 Reserved h 2 Key management schemes supported h 2 CF Advanced True lde Timing Mode Capability and Setting 164~ h 106 Reserved h 2 Non-rotating media(ssd) 218~ h 76 Reserved 4.3 Smart Information ATP Industrial Grade SATA DOM supports S.M.A.R.T. ATA feature set in IDE mode, AHCI mode, not support in RAID mode Smart Subcommand Sets In order to select a subcommand the host must write the subcommand code to the device's Features Register before issuing the SMART Function Set command. The subcommands are listed below. Table 4-3 Command SMART READ DATA SMART READ ATTRIBUTE THRESHOLD SMART ENABLE/DISABLE AUTOSAVE SMART SAVE ATTRIBUTE VALUES SMART EXECUTE OFF-LINE IMMIDIATE Command Code D0h D1h D2h D3h D4h ATP Confidential ATP Electronics, Inc. Page 13 of 18
16 RESERVED RESERVED SMART ENABLE OPERATIONS SMART DISABLE OPERATIONS SMART RETURN STATUS D5h D6h D8h D9h DAh Note: If the reserved size is below a threshold, status can be read from the Cylinder Register using the Return Status command (DAh) SMART Read Data (Subcommand Doh) The following 512 bytes make up the device SMART data structure. Users can obtain the data using the Read Data command (D0h). Table 4-4 Byte F/V Description 0~1 X Revision code 2~361 X Vendor Specific 362 V Off-line data collection status 363 X Self-test execution status byte 364~365 V Total time in seconds to complete off-line data collection activity 366 X Vendor Specific 367 F Off-line data collection capability 368~369 F SMART capability 370 F Error logging capability: 7-1 = Reserved 0-1 = Device error logging supported 371 X Vendor Specific 372 F Short self-test routine recommended polling time (in minutes) 373 F Extended self-test routine recommended polling time (in minutes) 374 F Conveyance self-test routine recommended polling time (in minutes) 375~385 R Reserved 386~395 F Firmware Version/Date Code ATP Confidential ATP Electronics, Inc. Page 14 of 18
17 Byte F/V Description 396~397 F Reserved 398~399 F Reserved 400~406 F SMI2244LT 407~415 X Vendor specific 416 F Reserved 417 F Program/write the strong page only 418~419 V Number of spare block 420~423 V Average erase count 424~510 X Vendor Specific 511 V Data structure checksum Notes: 1. F=content (byte) is fixed and does not change 2. V=content (byte) is variable and maybe change depending on the state of the device or the command executed by the device 3. X= content (byte) is vendor specific and maybe fixed or variable 4. R=content (byte) is reserved and shall be zero SMART Attribute The following table defines the vendor specific data in byte 2 to 361 of the 512-byte SMART data. ID Value (hex) Raw Attribute Value Attribute Name 1 01 MSB Read error rate 5 Reallocated sectors 05 LSB MSB count 9 09 LSB MSB Reserved 12 0C LSB MSB Power cycle count 160 Uncorrectable A0 LSB MSB sector count when read/write 161 Number of valid A1 LSB MSB spare block 162 Number of child A2 LSB MSB pair 163 Number of initial A3 LSB MSB invalid block 164 A4 LSB MSB Total erase count ATP Confidential ATP Electronics, Inc. Page 15 of 18
18 ID Value (hex) Raw Attribute Value Attribute Name A5 LSB MSB A6 LSB MSB A7 LSB MSB C0 LSB MSB C2 MSB C3 LSB MSB C4 LSB MSB Maximum erase count Minimum erase count Average erase count Power-off retract count Controlled temperature (Fixed at 27 o C) Hardware ECC Recovered Reallocation Event count 198 C6 LSB MSB Reserved C7 LSB MSB F1 LSB MSB F2 LSB MSB UltraDMA CRC error count Total LBAs written (each write unit=32mb) Total LBAs read (each write unit=32mb) 5.0 Mechanical Information 5.1 Physical Dimension Specifications Table 5-1 Type Value SATA DOM Length Width Thickness mm +/- 0.20mm mm +/ mm mm +/- 0.20mm Long cable Length 277.5mm +/- 10mm Short cable Length 85.2mm +/- 5mm ATP Confidential ATP Electronics, Inc. Page 16 of 18
19 5.2 Mechanical Form Factor (Units in mm) Short cable ATP Confidential ATP Electronics, Inc. Page 17 of 18
20 Long cable ATP Confidential ATP Electronics, Inc. Page 18 of 18
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