UNIT V (PROGRAMMABLE LOGIC DEVICES)

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2 UNIT V (PROGRAMMABLE LOGIC DEVICES) Introduction There are two types of memories that are used in digital systems: Random-access memory(ram): perform both the write and read operations. Read-only memory(rom): perform only the read operation. The read-only memory is a programmable logic device. Other such units are the programmable logic array(pla), the programmable array logic(pal), and the fieldprogrammable gate array(fpga). Array logic A typical programmable logic device may have hundreds to millions of gates interconnected through hundreds to thousands of internal paths. In order to show the internal logic diagram in a concise form, it is necessary to employ a special gate symbology applicable to array logic. Programmable Read Only Memory (PROM) A block diagram of a ROM is shown below. It consists of k address inputs and n data outputs. The number of words in a ROM is determined from the fact that k address input lines are needed to specify 2k words. SIETK Dept. of ECE P a g e 120

3 Construction of ROM Each output of the decoder represents a memory address. Each OR gate must be considered as having 32 inputs. A 2k X n ROM will have an internal k X 2k decoder and n OR gates. Truth table of ROM A programmable connection between to lines is logically equivalent to a switch that can be altered to either be close or open.intersection between two lines is sometimes called a cross-point. SIETK Dept. of ECE P a g e 121

4 Programming the ROM In Table 7-3, 0 no connection 1 connection Address 3 = is permanent storage using fuse link Combinational circuit implementation The internal operation of a ROM can be interpreted in two way: First, a memory unit that contains a fixed pattern of stored words. Second, implements a combinational circuit Fig may be considered as a combinational circuit with eight outputs, each being a function of the five input variables. Example Design a combinational circuit using a ROM. The circuit accepts a 3-bit number and generates an output binary number equal to the square of the input number. SIETK Dept. of ECE P a g e 122

5 Derive truth table first Types of ROMs The required paths in a ROM may be programmed in four different ways. 1. Mask programming: fabrication process 2. Read-only memory or PROM: blown fuse /fuse intact 3. Erasable PROM or EPROM: placed under a special ultraviolet light for a given period of time will erase the pattern in ROM. 4. Electrically-erasable PROM(EEPROM): erased with an electrical signal instead of ultraviolet light. SIETK Dept. of ECE P a g e 123

6 Combinational PLDs A combinational PLD is an integrated circuit with programmable gates divided into an AND array and an OR array to provide an AND-OR sum of product implementation. PROM: fixed AND array constructed as a decoder and programmable OR array. PAL: programmable AND array and fixed OR array. PLA: both the AND and OR arrays can be programmed. SIETK Dept. of ECE P a g e 124

7 Programmable Logic Array Fig.7-14, the decoder in PROM is replaced by an array of AND gates that can be programmed to generate any product term of the input variables. The product terms are then connected to OR gates to provide the sum of products for the required Boolean functions. The output is inverted when the XOR input is connected to 1 (since x 1 = x ). The output doesn t change and connect to 0 (since x 0 = x). F1 = AB +AC+A BC F2 = (AC+BC) SIETK Dept. of ECE P a g e 125

8 Programming Table 1. First: lists the product terms numerically 2. Second: specifies the required paths between inputs and AND gates 3. Third: specifies the paths between the AND and OR gates 4. For each output variable, we may have a T(ture) or C(complement) for programming the XOR gate Simplification of PLA Careful investigation must be undertaken in order to reduce the number of distinct product terms, PLA has a finite number of AND gates. Both the true and complement of each function should be simplified to see which one can be expressed with fewer product terms and which one provides product terms that are common to other functions. Example Implement the following two Boolean functions with a PLA: F1(A, B, C) = (0, 1, 2, 4) F2(A, B, C) = (0, 5, 6, 7) The two functions are simplified in the maps of Fig.7-15 PLA table by simplifying the function Both the true and complement of the functions are simplified in sum of products. We can find the same terms from the group terms of the functions of F1, F1,F2 and F2 which will make the minimum terms. F1 = (AB + AC + BC) F2 = AB + AC + A B C SIETK Dept. of ECE P a g e 126

9 PLA implementation SIETK Dept. of ECE P a g e 127

10 Programmable Array Logic The PAL is a programmable logic device with a fixed OR array and a programmable AND array. When designing with a PAL, the Boolean functions must be simplified to fit into each section. Unlike the PLA, a product term cannot be shared among two or more OR gates. Therefore, each function can be simplified by itself without regard to common product terms. The output terminals are sometimes driven by three-state buffers or inverters. Example SIETK Dept. of ECE P a g e 128

11 PAL Table z has four product terms, and we can replace by w with two product terms, this will reduce the number of terms for z from four to three. PAL implementation SIETK Dept. of ECE P a g e 129

12 Fuse map for example Sequential Programmable Devices Sequential programmable devices include both gates and flip-flops. There are several types of sequential programmable devices, but the internal logic of these devices is too complex to be shown here. We will describe three major types without going into their detailed construction. 1. Sequential (or simple) Programmable Logic Device (SPLD) 2. Complex Programmable Logic Device (CPLD) 3. Field Programmable Gate Array (FPGA) SIETK Dept. of ECE P a g e 130

13 FPLS The first programmable device developed to support sequential circuit implementation is the field-programmable logic sequencer (FPLS).A typical FPLS is organized around a PLA with several outputs driving flip-flops. The flip-flops are flexible in that they can be programmed to operate as either JK or D type. The FPLS did not succeed commercially because it has too many programmable connections. SPLD Each section of an SPLD is called a macrocell. A macrocell is a circuit that contains a sumof-products combinational logic function and an optional flip-flop. We will assume an AND- OR sum of products but in practice, it can be any one of the two-level implementation. Macrocell Fig.7-19 shows the logic of a basic macrocell. The AND-OR array is the same as in the combinational PAL shown in Fig CPLD A typical SPLD has from 8 to 10 macrocells within one IC package. All the flip-flops are connected to the common CLK input and all three-state buffers are controlled by the EO input. The design of a digital system using PLD often requires the connection of several devices to produce the complete specification. For this type of application, it is more economical to use a complex programmable logic device (CPLD). A CPLD is a collection of individual PLDs on a single integrated circuit. SIETK Dept. of ECE P a g e 131

14 Fig.7-20 shows a general configuration of a CPLD. It consists of multiple PLDs interconnected through a programmable switch matrix. 8 to 16 macrocell per PLD. Gate Array The basic component used in VLSI design is the gate array. A gate array consists of a pattern of gates fabricated in an area of silicon that is repeated thousands of times until the entire chip is covered with the gates. Arrays of one thousand to hundred thousand gates are fabricated within a single IC chip depending on the technology used. FPGA FPGA is a VLSI circuit that can be programmed in the user s location. A typical FPGA logic block consists of look-up tables, multiplexers, gates, and flip-flops. Look-up table is a truth table stored in a SRAM and provides the combinational circuit functions for the logic block. Differential of RAM and ROM in FPGA The advantage of using RAM instead of ROM to store the truth table is that the table can be programmed by writing into memory. The disadvantage is that the memory is volatile and presents the need for the look-up table content to be reloaded in the event that power is disrupted. SIETK Dept. of ECE P a g e 132

15 Comparison between PROM, PLA and PAL SIETK Dept. of ECE P a g e 133

16 UNIT V ROMs SIETK Dept. of ECE P a g e 134

17 UNIT V (MEMORIES) Introduction There are two types of memories that are used in digital systems: Random-access memory (RAM): perform both the write and read operations. Read-only memory (ROM): perform only the read operation. The read-only memory is a programmable logic device. Other such units are the programmable logic array (PLA), the programmable array logic (PAL), and the fieldprogrammable gate array (FPGA). Random-Access Memory A memory unit stores binary information in groups of bits called words. 1 byte = 8 bits 1 word = 2 bytes The communication between a memory and its environment is achieved through data input and output lines, address selection lines, and control lines that specify the direction of transfer. Content of a memory Each word in memory is assigned an identification number, called an address, starting from 0 up to 2k-1, where k is the number of address lines. The number of words in a memory with one of the letters K=210, M=220, or G= K = 216 2M = 221 4G = 232 SIETK Dept. of ECE P a g e 135

18 Write and Read operations Transferring a new word to be stored into memory: 1. Apply the binary address of the desired word to the address lines. 2. Apply the data bits that must be stored in memory to the data input lines. 3. Activate the write input. Transferring a stored word out of memory: 1. Apply the binary address of the desired word to the address lines. 2. Activate the read input. SIETK Dept. of ECE P a g e 136

19 Commercial memory sometimes provide the two control inputs for reading and writing in a somewhat different configuration in table 7-1. Timing Waveforms (write) The access time and cycle time of the memory must be within a time equal to a fixed number of CPU clock cycles. The memory enable and the read/write signals must be activated after the signals in the address lines are stable to avoid destroying data in other memory words. Enable and read/write signals must stay active for at least 50ns. SIETK Dept. of ECE P a g e 137

20 Timing Waveforms (read) The CPU can transfer the data into one of its internal registers during the negative transition of T3. Types of memories In random-access memory, the word locations may be thought of as being separated in space, with each word occupying one particular location. In sequential-access memory, the information stored in some medium is not immediately accessible, but is available only certain intervals of time. A magnetic disk or tape unit is of this type. In a random-access memory, the access time is always the same regardless of the particular location of the word. In a sequential-access memory, the time it takes to access a word depends on the position of the word with respect to the reading head position; therefore, the access time is variable. Static RAM SRAM consists essentially of internal latches that store the binary information. The stored information remains valid as long as power is applied to the unit. SRAM is easier to use and has shorter read and write cycles. Low density, low capacity, high cost, high speed, high power consumption. Dynamic RAM DRAM stores the binary information in the form of electric charges on capacitors. The capacitors are provided inside the chip by MOS transistors. The capacitors tend to discharge with time and must be periodically recharged by refreshing the dynamic memory. DRAM SIETK Dept. of ECE P a g e 138

21 offers reduced power consumption and larger storage capacity in a single memory chip. High density, high capacity, low cost, low speed, low power consumption. Types of memories Memory units that lose stored information when power is turned off are said to be volatile. Both static and dynamic, are of this category since the binary cells need external power to maintain the stored information. Nonvolatile memory, such as magnetic disk, ROM, retains its stored information after removal of power. Memory decoding The equivalent logic of a binary cell that stores one bit of information is shown below. Read/Write = 0, select = 1, input data to S-R latch Read/Write = 1, select = 1, output data from S-R latch 4X4 RAM *Refer SR latch with NOR gates There is a need for decoding circuits to select the memory word specified by the input address. During the read operation, the four bits of the selected word go through OR gates to the output terminals. During the write operation, the data available in the input lines are transferred into the four binary cells of the selected word. A memory with 2k words of n bits per word requires k address lines that go into kx2k decoder SIETK Dept. of ECE P a g e 139

22 Coincident decoding A decoder with k inputs and 2k outputs requires 2k AND gates with k inputs per gate. Two decoding in a two-dimensional selection scheme can reduce the number of inputs per gate. 1K-word memory, instead of using a single 10X1024 decoder, we use two 5X32 decoders. SIETK Dept. of ECE P a g e 140

23 Address multiplexing DRAMs typically have four times the density of SRAM. The cost per bit of DRAM storage is three to four times less than SRAM. Another factor is lower power requirement. Address multiplexing will reduce the number of pins in the IC package. In a two-dimensional array, the address is applied in two parts at different times, with the row address first and the column address second. Since the same set of pins is used for both parts of the address, so can decrease the size of package significantly. Address multiplexing for 64K DRAM After a time equivalent to the settling time of the row selection, RAS goes back to the 1 level. Registers are used to store the addresses of the row and column. CAS must go back to the 1 level before initialing another memory operation. Internal Structure of ROM An array of semiconductor devices diodes transistors SIETK Dept. of ECE P a g e 141

24 field effect transistors 2N words by M bits Data can be read but not changed (normal operating conditions) N input bits 2N words by M bits Implement M arbitrary functions of N variables Example 8 words by 5 bits: SIETK Dept. of ECE P a g e 142

25 ROM Memory Array Alternate view Each possible horizontal/vertical intersection indicates a possible connection. Or gates at bottom output the word selected by the decoder (32 x 8) SIETK Dept. of ECE P a g e 143

26 Commercial ROM types EPROM Uses a floating gate for the FET at each bit location. User uses a programming voltage that causes a temporary breakdown in the dielectric between the gate and the floating gate to charge it. When programming voltage is removed the charge stays. How long? EPROM manufacturers guaranteeǁ properly programmed bit has 70% of charge after 10 years. Use UV light to erase. SIETK Dept. of ECE P a g e 144

27 EEPROM Electrically Erasable PROM. Like the EPROM only electrically erasable in circuit. Many times referred to a flashǁ programmable memory. Very slow on writes so not a substitute for RAM. General Block Diagram of ROM Timing Diagram of ROM SIETK Dept. of ECE P a g e 145

28 Access time from address taa Access time from chip select - tacs Output-enable time - toe Output-disable time - toz Output-hold time - toh R/W Memory Memory to store and retrieve data when more than F/Fs. A few types Static RAM SRAM As long as power is maintained data is held SRAM data storage SIETK Dept. of ECE P a g e 146

29 static RAM chip Internal an arrangement of storage structures SRAM Timing Timing for read DRAM Next step in memory is Synchronous SRAM which has a clocked interface for control, address and data. Then comes DRAM dynamic ram. In DRAM data is stored in a semiconductor capicator. SIETK Dept. of ECE P a g e 147

30 DRAM Read A read sees the bit line precharged to high. The word line is then activated. If cell stores a 0 then there is a small drop on the voltage on the bit line. This is monitored by a sense amp which provides the value stored. Value must be written back after the read. DRAM Refresh Charge stored leaks off over time. Must restore the values stored a 4096 row DRAM it refresh every 64ms and thus each row every 15.6 usec. Larger DRAMs are banks of smaller. DDR SDRAM Double data rate SDRAM. Double the data transfer rate of an SDRAM by transferring on both edges of the clock. Access and setup times are the same as SRAM. Increased data throughput as data is transferred in blocks. DRAM structure and operation Write operation Setting the word line to 1.To store a 1, a HIGH voltage is placed on the bit line, which charges the capacitor through the onǁ transistor. To store a 0, a LOW voltage is placed on the bit line, which discharges the capacitor through the onǁ transistor. Read operation The bit line is first precharged to a voltage halfway between HIGH and LOW. The word line is set HIGH so that the precharged bit line is pulled slightly higher or slightly lower. A sense amplifier detects this small change and recovers a 1 or 0 accordingly. Reading a DRAM cell destroy the original voltage stored on the capacitor, the DRAM cell must be written back the original data after reading. Internal structure of a 64Kx1 DRAM Multiplexed address inputs. SIETK Dept. of ECE P a g e 148

31 RAS_L: Row address strobe to store the higher order bits of the address into the row-address register. CAS_L: Column address strobe to store the lower order bits of the address into the columnaddress register. Row latches: the latches used to store data input/output from the memory array. RAM Cells Static RAM (SRAM): The basic element of a static RAM cell is the D-Latch. Data remains stored in the cell until it is intentionally modified. SRAM is fast (Access time: 1ns). SRAM needs more space on the semiconductor chip than DRAM. SRAM more expensive than DRAM SRAM needs more space than DRAM SRAM consumes power only when accessed. SRAM is used as a Cache Dynamic RAM (DRAM): DRAM stores data in the form of electric charges in capacitors. Charges leak out, thus need to refresh data every few ms. DRAM is slow (Access time: 60ns). DRAM needs less space on the semiconductor chip than SRAM. DRAM less expensive than SRAM DRAM needs less space than SRAM DRAM needs to be refreshed DRAM is used as the main memory Types of semiconductor memory devices: Static RAM Static RAM (also called SRAM)devices retain their data for as long as the DC power is applied. The most common family of SRAM are the 61XXX, 62XXX or the CMOS SIETK Dept. of ECE P a g e 149

32 62CXXX series, where XXX indicates the memory capacity in Kbits. Some members of this family are the following: 6116/6216(2Kx8) 61256/62256(32Kx8) 6164/6264 (8Kx8) / (128Kx8) These series of SRAM devices are pin compatible with the 27XXX series of EPROMs, with the difference that the WR signal is replaced by the programming voltage pin (Vpp) on the EPROM. This allows a single socket on the PCB hold either a SRAM, during system development, or an EPROM, after the operation of the program is verified to be the expected one. Static RAM is fast with access times much less than 100ns. SRAM chips with access times less than 10ns are often used as cache memory in computers. DYNAMIC RAM CELL ARRAY Asynchronous DRAM This is the basic form, from which all others are derived. An asynchronous DRAM chip has power connections, some number of address inputs (typically 12), and a few (typically 1 or 4) bidirectional data lines. There are four active low control signals: /RAS, the Row Address Strobe. The address inputs are captured on the falling edge of /RAS, and select a row to open. The row is held open as long as /RAS is low. /CAS, the Column Address Strobe. The address inputs are captured on the falling edge of /CAS, and select a column from the currently open row to read or write. /WE, Write Enable. This signal determines whether a given falling edge of /CAS is a read (if high) or write (if low). If low, the data inputs are also captured on the falling edge of /CAS. /OE, Output Enable. This is an additional signal that controls output to the data I/O pins. The data pins are driven by the DRAM chip if /RAS and /CAS are low, and /WE is high, and /OE is low. In many applications, /OE can be permanently connected low (output always enabled), but it can be useful when connecting multiple memory chips in parallel. SIETK Dept. of ECE P a g e 150

33 DYNAMIC RAM DRAM requires refreshing every 2 to 4 ms. Refreshing occurs automatically during a read or write. Internal circuitry takes care of refreshing cells that are not accessed over this interval. For a 256K X 1 DRAM with 256 rows, a refresh must occur every 15.6us (4ms/256). SIETK Dept. of ECE P a g e 151

34 For the 8086, a read or write occurs every 800ns. This allows 19 memory reads/writes per refresh or 5% of the time. DRAM technologies EDO DRAM SDRAM DRDRAM DDR DRAM Soft errors occur on DRAMs which often require ERROR DETECTION and/or ERROR CORRECTION A DRAM CONTROLLER is required for using DRAM SYNCHRONOUS DYNAMIC RAM In a synchronous DRAM, the control signals are synchronized with the system bus clock and therefore with the microprocessor. It allows pipelined read/write operations Double Data Rate (DDR) DRAM An SDRAM type of memory where data are transferred on both the rising and the falling clock edge, effectively doubling the transfer rate without increasing the clock frequency.ddr-200 means a transfer rate of 200 million transfers per second, at a clock rate of 100 MHz.DDR1 upto 400 MHz.DDR2 standard allows higher clock frequencies. DRAM Refresh circuit : storage decay in ms DRAMs take up much less space, typically ¼ the silicon area of SRAMs or less (one transistor and a capacitor) SIETK Dept. of ECE P a g e 152

35 DRAM Organization Long rows to simplify refresh. Two new signals: RAS, CAS. Row Address Strobe, Column Address Strobe replace Chip Select. RAS, CAS Addressing Even to read 1 bit, an entire 64-bit row is read! Separate addressing into two cycles: Row Address, Column Address. Saves on package pins, speeds RAM access for sequential bits! SIETK Dept. of ECE P a g e 153

36 Write cycle timing RAM Refresh Refresh Frequency :(4ms 64ms) 4096 word RAM -- refresh each word once every 4 ms Assume 120ns memory access cycle This is one refresh cycle every 976 ns (1 in 8 DRAM accesses)! But RAM is really organized into 64 rows This is one refresh cycle every 62.5 ms (1 in 500 DRAM accesses) Large capacity DRAMs have 256 rows, refresh once every 16 ms RAS-only Refresh (RAS cycling, no CAS cycling) External controller remembers last refreshed row Some memory chips maintain refresh row pointer CAS before RAS refresh: if CAS goes low before RAS, then refresh DRAM Technologies Conventional DRAM Fast Page Mode (FPM) DRAM Extended Data Out (EDO) DRAM Synchronous DRAM (SDRAM) SIETK Dept. of ECE P a g e 154

37 Double Data Rate SDRAM (DDR SDRAM) Direct Rambus DRAM (DRDRAM) Synchronous-Link DRAM (SLDRAM) Fast Page Mode (FPM) DRAM Sending the row address just once for many accesses to memory in locations near each other, improving access time Page mode Burst mode access Memory is not read one byte at a time (32 or 64 bits at a time) Several consecutive chunks of memory x-y-y-yǁ for four consecutive accesses SIETK Dept. of ECE P a g e 155

38 Synchronous DRAM Tied to the system clock Burst mode System timing : Internal interleaving New memory standard for modern PCs Speed Access time: 10ns, 12ns, MHz rating: 100 MHz, 133MHz Latency SDRAMs are still DRAMs (10ns means the second, third and fourth access times) 2-clock and 4- clock Circuitry 2-clock: 2 different DRAM chips on the module SIETK Dept. of ECE P a g e 156

39 4-clock: 4 different DRAM chips Packaging Usually comes in DIMM packaging Buffered and unbuffered, 3.3 V and 5.0V Comparison of semiconductor memories SIETK Dept. of ECE P a g e 157