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1 January
2 Company Highlights Business Start : August, 1997 Collected Capital : NT$ 2.415B (US$ 75M) ISO 9001 Certification : August 2000 Revenue in 2007 : NT$ 6.85B (US$ 210M) IPO : March 2002 Major Wafer Foundries : PSC, NTC, SMIC, ProMos Number of Employees : 282 (Engineering Team : 196) Location : HsinChu Science Park, HsinChu, Taiwan Page 2
3 FAB Partners Powerchip Semiconductor Corp. (PSC) 300mm & 200mm Fab. NanYa Technology Corp. (NTC) 200mm Fab. ProMos Technologies Inc. (PMS) 300mm Fab. Semiconductor Manufacturing International Corp. (SMIC) 300mm & 200mm Fab. Page 3
4 Assembly & Testing Partners Assembly House : Siliconwave Precision Industries Ltd. (SPIL), Advanced Semiconductor Engineering Inc. (ASE), and TICP Testing House : ChipMos and KYEC Page 4
5 DRAM Product Categories SDRAM DDR/DDR2 Mobile SD/DDR Flash NOR Parallel NOR Serial PSRAM Page 5
6 Product Roadmap SDRAM E/S M/P Mode Density Configuration Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 16Mb 32Mb 1Mx16 2.5/3.3V 143/200MHz 50TSOPII, 60FBGA 2Mx16 2.5/3.3V 143/200MHz 54TSOPII, 54FBGA 1Mx32 2.5/3.3V 143/166/200MHz 90FBGA 0.15um SDRAM 64Mb 128Mb 256Mb 4Mx16 2.5/3.3V 143/200MHz 54TSOPII, 54FBGA 2Mx32 2.5/3.3V 143/166/200MHz 86TSOPII, 90FBGA 8Mx16 2.5/3.3V 143/166/200MHz 54TSOPII, 54FBGA 4Mx32 3.3V 143/166MHz 86TSOPII, 90FBGA 16Mx16 3.3V 143/166MHz 54TSOPII, 54FBGFA 0.07um 0.07um Page 6
7 Product Roadmap DDR SDRAM E/S M/P Mode Density Configuration Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 32Mb 1Mx32 2.5V 333/400MHz 100LQFP 64Mb 4Mx16 2.5V 333/400MHz 66TSOPII, 60BGA 0.07um DDR SDRAM 128Mb 8Mx16 2.5V 333/400MHz 66TSOPII, 60BGA 4Mx32 2.5V 333/400/500/555MHz 144FBGA/100LQFP 256Mb 16Mx16 2.5V 333/400/500MHz 66TSOPII 8Mx32 2.5V 400MHz 144FBGA 0.07um 512Mb 32Mx16 2.5V 333/400MHz 144FBGA Page 7
8 Product Roadmap DDR2 SDRAM E/S M/P Mode Density Configuration DDR2 SDRAM 128Mb 256Mb 8Mx16 1.8V 667/800MHz 84FBGA 16Mx16 1.8V 667/800MHz 84FBGA Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 0.07um 0.07um 512Mb 32Mx16 1.8V 667/800MHz 84FBGA 0.07um Page 8
9 Product Roadmap Mobile SD/DDR Mode Density Configuration Mobile SDRAM Mobile DDR SDRAM 16Mb 32Mb 64Mb 128Mb 64Mb 128Mb 1Mx16 1.8/2.5V 100/133/166MHz KGD,60FBGA,50TSOPII 2Mx16 1.8/2.5V 100/133MHz KGD,54TSOPII,54FBGA 1Mx32 1.8/2.5V 100/133MHz KGD,90FBGA 4Mx16 1.8/2.5V 100MHz KGD,54TSOPII,54FBGA 2Mx32 1.8/2.5V 100MHz KGD,90FBGA 8Mx16 1.8/2.5V 100/133MHz KGD,54TSOPII,54FBGA 2Mx32 1.8/2.5V 133/166MHz KGD,90FBGA 8Mx16 1.8/2.5V 200/266MHz KGD,66TSOPII Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 0.15um Page 9 E/S 2010 M/P
10 Product Roadmap NOR Flash E/S M/P Mode Density Configuration Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 8Mb 512Kx16 / 1Mx8 2.7~3.6V, 70ns 48TSOP-I 0.18um 16Mb 1Mx16 / 2Mx8 2.7~3.6V, 70ns 48TSOP-I 0.18um 0.13um BIOS, Code Flash (Parallel) 32Mb 2Mx16 / 4Mx8 2.7~3.6V, 70ns 48TSOP-I 2Mx16 2.7~3.6V, 70ns page mode, Multi-bank 0.13um 0.13um 2Mx ~1.95V, 80Mhz Burst ADM, Multi-bank Page 10
11 Product Roadmap NOR Flash E/S M/P Mode Density Configuration Q3 Q4 Q1 Q2 Q3 Q4 Q3 Q4 4Mb F25L V 8-lead SOIC 150/200 mil DIP 300 mil 0.18um 0.13um 8Mb F25L V 8-lead SOIC 200 mil 0.18um 0.13um SPI Flash (Serial) 16Mb F25L V 8-lead SOIC 200 mil 0.18um 0.13um 32Mb F25L V 8-lead SOIC 200 mil 0.13um 64Mb F25L V 8-lead SOIC 200 mil Page 11
12 Product Roadmap PSRAM Density Configuration E/S M/P Q3 Q4 Q1 Q2 Q3 Q4 Q3 Q4 2Mb 4Mb 8Mb 16Mb 2MX16, 3.0V, 70ns 32Mb KGD, 48FBGA Page kX16, 3.0V, 55/70ns KGD, 48FBGA 256kX16, 3.0V, 70ns KGD, 48FBGA 256kX16, 1.8V, 70ns ADMUX/nonMUX KGD, 48FBGA 512kX16, 3.0V, 70ns KGD, 48FBGA 512kX16, 1.8V, 70ns ADMUX/nonMUX KGD, 48FBGA 1MX16, 3.0V, 70ns KGD, 48FBGA 1MX16, 1.8V, 70ns ADMUX/nonMUX KGD, 48FBGA 0.165um 0.165um 0.165um 0.125um 0.125um 0.125um 0.125um
13 Summary Top notch and well experienced memory design and product development team. Stable and committed foundry support. Experienced semiconductor executives in management team. Well-planned products and technology roadmap for specialty memory offering. Strong manufacturing capability with stringent quality and reliability assurance. Prompt customer services and FAE support. Stable and committed design on product development service. Well-experienced support on co-work of MCP/MCM development. Page 13
14 Appendix DRAM & Flash Product Part Number Naming System Page 14
15 Elite Semiconductor Memory Technology Inc. Part Number Naming system Memory Product M XX X AABBCC (D)V -SS(K) P Configuration AA: Density in Mb 1: 1Mb 4: 4Mb 16: 16Mb 32: 32Mb 64: 64Mb 128: 128Mb 256: 256Mb BB: I/O pin number 8: x8 16: x16 32: x32 CC: Address 64: 64k 256: 256k 512: 512k 1: 1M 2: 2M 4: 4M 8: 8M 16: 16M 32: 32M Option Speed related option Package type Q: QFP L: LQFP F: TQFP T: TSOP P: SOP J: SOJ C: CSP B: BGA S: STSOP N: PLCC D: PDIP Product family 10: Fast Page DRAM 11: EDO DRAM 12: SDRAM 13: DDR SDRAM Speed/Frequency 14: DDR2 SDRAM ns/400MHz 21: Asyn SRAM Version 3 3ns/333MHz 22: Syn SRAM Major 23: Low power SRAM ns/300MHz 24: Pseudo SRAM Version ns/275MHz 32: SGRAM Change 4 4ns/250MHz 33: DDR SGRAM 5: 5ns/200MHz 52: Mobile SDRAM Design Option 6: 6ns/166MHz 53: Mobile DDR Pseudo SRAM 7: 7ns/143MHz Operation Voltage S: Single CE 7.5: 7.5ns/133MHz B : 5V D: Dual CE 10: 10ns/100MHz L : 3.3V M: A/DMux 25: 25ns S : 2.5V EDO DRAM 35: 35ns D: 1.8-2V S: Self refresh 45: 45ns Page 15
16 Elite Semiconductor Memory Technology Inc. Part Number Naming system F XX X AAA (W) A - SS (K) P (S) EFST Flash Memory Product Product family 25: NOR-type Serial Flash 49: NOR-type Parallel Flash 59: NAND-Type Flash Operation Voltage B : 5V L : 3.3V S : 2.5V D: 1.8-2V Configuration AAA: Density in Mb 002: 2Mb, x8 I/O non-uniform sector 040: 4Mb, x8 I/O uniform sector 400: 4Mb, x16 I/O x16/x8 I/O Option Code I U : Upper boot B : Bottom boot Version Major Version Change Speed 55: 55ns 70: 70ns 90: 100ns Working Temperature Blank : 0~70C I : -40~85C Package type Q: QFP L: LQFP F: TQFP T: TSOP P: SOP J: SOJ C: CSP B: BGA S: STSOP N: PLCC D: PDIP C: SOIC Option Code II Sorted by different program Page 16
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