Latches SEU en techno IBM 130nm pour SLHC/ATLAS. CPPM, Université de la méditerranée, CNRS/IN2P3, Marseille, France
|
|
- Adela Floyd
- 5 years ago
- Views:
Transcription
1 Latches SEU en techno IBM 130nm pour SLHC/ATLAS CPPM, Université de la méditerranée, CNRS/IN2P3, Marseille, France
2 Outline Introduction Description of the DICE latch Different implemented layouts for the DICE latch Measurement and comparison of implemented latches Proposed implementation for the pixel configuration block Conclusion 2/11
3 Introduction hardened by design (HBD) approaches are used to reduce the effect of single bit upsets. Dual Interlocked Cell (DICE) latches have redundant storage nodes dual node and theoretically restores the original state when an upset occurs in one node. The upset may appear if the charge collected in two nodes exceed the critical value test circuits using the130 nm CMOS process designed in order to study the effect of layout techniques on the tolerance of the DICE latch to single event upsets. Irradiation tests were carried out using IRRAD3 beam line of the Proton Synchrotron (PS) facility at CERN. The test beam provides a beam of 24 GeV protons Proposed structure for : Pixel configuration block Global configuration block 3/11
4 Dice Latch description inb The DICE latch is based on the conventional cross coupled inverter latch structure If we assume a positive upset pulse on the node X2 load outb MP3 is blocked (ON -> OFF) avoiding the propagation of this perturbation to the node X3 MP1 MP2 MP3 MP4 X1 X2 X3 X MN1 MN2 MN3 MN4 load out For a single node, the critical charge is very high (~1 pc) If 2 sensitive nodes of the cell storing the same logic state (X1-X3) or (X2-X4) are corrupted due to the effect of a single particle impact, the immunity is lost and the Dice latch is upset. in The critical charge becomes low (~40 fc) when a charge from upset is collected by a sensitive node pair 4/11
5 Sensitive areas inb For out =1 Sensitive pair node load MP1 MP2 MP3 MP4 OFF ON OFF ON X1 1 X2 0 X3 1 X4 0 outb out X1=X3=1 and X2=X4=0 Sensitive area corresponds to the OFF transistor drain area Sensitive area has to be minimized ON OFF ON OFF MN1 MN2 MN3 MN4 Spatial separation for the drain of MN1-MN3, MN2-MN4 load Contacted guard ring and nwell separation for pmos MP1-MP3, MP2-MP4 in 5/11
6 Test Set up Control room irradiation area LabWindows software PCIMCIA acquisition board TTL -LVDS LVDS signals LVDS-TTL Serial link A Current supply control ~20 meters error_in parity_in TRL error parity TRL error parity TRL TRL error_out parity_out Readback Load serin D Q D Q D Q ck DFF ck DFF ck DFF ck DFF D Q serout clk Reset TRL : Triple redundant latch DFF : Standard Flip Flop 231 cells 6/11
7 Layouts implemented in the chip SEU1 FEI3_DICE latch (latch 1) Latch type area 1->0 Cross section (cm²/bit) Latch 1 54 µm² Latch Area = 54 µm² Latch 5 48 µm² Improved DICE latch (latch 5) Measurements made in 2007 for the chip SEU1 Latch Area = 48 µm² 7/11
8 Layouts implemented in the chip SEU2 Different layout versions were implemented in the SEU2 chip Latch 5: pmos in same nwell, enclosed and separated nmos with guard ring (pmos separation: 8µm, nmos separation: 2.4µm) Same schematic but different layout Latch type area Cross section cm²/bit 1->0 0->1 1->0 and 0->1 Latch 5.2: pmos in isolated nwell, enclosed nmos with guard ring (pmos separation: 4µm, nmos separation: 8µm) Latch 5 48 µm² (1.5 ± 0.1) (2.2 ± 0.3) (5.9 ± 0.5) Latch µm² (3.4 ± 0.6) (4.2 ± 0.4) (3.6 ± 0.5) Latch µm² (3.0 ± 0.6) (3.3 ± 0.3)10-16 (2.4 ± 0.5) Measurements made in 2008 for the chip SEU2 Latch 5.3: same structure like latch 5.2 with interleaved layout Pmos separation: 5.4µm, nmos separation: 9µm) 8/11
9 «SEULATCH_wGate» schematic Old schematic New schematic A modified schematic is proposed : Remove the «latchclear» signal We add a readback option for all latches to improve tests The latch clear operation can be done by loading pattern FEI4-Proto DICE latch 36µm² 9/11
10 proposed layout Configbloc_wGate 22µm A1 C2 50µm 30µm B1 C1 D2 A2 D1 B2 150µm 37µm A1 C2 E1 F1 G2 H2 B1 D2 G1 I2 C1 A2 H1 E2 D1 B2 I1 F2 A1 DICE latch A2 Interleaved structure In order to improve the SEU tolerance we are using interleaved layout for each latch in the pixel configuration block 1 elementary cell 10/11
11 Future Finalize proposal layout in FEI4-P2 for several columns Fit SEU tolerant latch in the pixel dedicated area Finalize interconnections to realize an interleaved structure Fit SEU tolerant latch for global configuration block Using triple redundant latch Prepare future radiations tests: work with a higher frequency (40MHz) 11/11
ATMEL ATF280E Rad Hard SRAM Based FPGA. Bernard BANCELIN ATMEL Nantes SAS, Aerospace Business Unit
ATMEL ATF280E Rad Hard SRAM Based FPGA Bernard BANCELIN ATMEL Nantes SAS, Aerospace Business Unit Overview Atmel FPGA Key Points and Architecture ATF280E Radiation Test Results 2 Overview Atmel FPGA Key
More informationRTG4 PLL SEE Test Results July 10, 2017 Revised March 29, 2018 Revised July 31, 2018
RTG4 PLL SEE Test Results July 10, 2017 Revised March 29, 2018 Revised July 31, 2018 Radiation Group 1 I. Introduction This document disseminates recently acquired single-event-effects (SEE) data on the
More informationRadiation-Hard ASICS for Optical Data Transmission in the First Phase of the LHC Upgrade
Radiation-Hard ASICS for Optical Data Transmission in the First Phase of the LHC Upgrade A. Adair, W. Fernando, K.K. Gan, H.P. Kagan, R.D. Kass, H. Merritt, J. Moore, A. Nagarkar, S. Smith, M. Strang The
More informationHigh temperature / radiation hardened capable ARM Cortex -M0 microcontrollers
High temperature / radiation hardened capable ARM Cortex -M0 microcontrollers R. Bannatyne, D. Gifford, K. Klein, C. Merritt VORAGO Technologies 2028 E. Ben White Blvd., Suite #220, Austin, Texas, 78741,
More informationResults on Array-based Opto-Links
Results on Array-based Opto-Links, H.P. Kagan, R.D. Kass, H. Merritt, J. Moore, A. Nagarkar, D. Pignotti, S. Smith, M. Strang The Ohio State University P. Buchholz, A. Wiese, M. Ziolkowski Universität
More informationPrototype Opto Chip Results
Prototype Opto Chip Results K.K. Gan, H.P. Kagan, R.D. Kass, J. Moore, S. Smith The Ohio State University Nov 5, 2008 K.K. Gan ATLAS Tracker Upgrade Workshop 1 Outline Introduction VCSEL driver chip PIN
More informationAnalysis and Design of Low Voltage Low Noise LVDS Receiver
IOSR Journal of Electronics and Communication Engineering (IOSR-JECE) e-issn: 2278-2834,p- ISSN: 2278-8735.Volume 9, Issue 2, Ver. V (Mar - Apr. 2014), PP 10-18 Analysis and Design of Low Voltage Low Noise
More information3. Implementing Logic in CMOS
3. Implementing Logic in CMOS 3. Implementing Logic in CMOS Jacob Abraham Department of Electrical and Computer Engineering The University of Texas at Austin VLSI Design Fall 27 September, 27 ECE Department,
More informationInitial Single-Event Effects Testing and Mitigation in the Xilinx Virtex II-Pro FPGA
Initial Single-Event Effects Testing and Mitigation in the Xilinx Virtex II-Pro FPGA J. George 1, S. Rezgui 2, G. Swift 3, C. Carmichael 2 For the North American Xilinx Test Consortium 1 The Aerospace
More information16th Microelectronics Workshop Oct 22-24, 2003 (MEWS-16) Tsukuba Space Center JAXA
16th Microelectronics Workshop Oct 22-24, 2003 (MEWS-16) Tsukuba Space Center JAXA 1 The proposed presentation explores the use of commercial processes, including deep-sub micron process technology, package
More informationCMS Tracker PLL Reference Manual
CMS Tracker PLL Reference Manual P. Placidi, A. Marchioro and P. Moreira CERN - EP/MIC, Geneva Switzerland July 2 Version 2. Clock and Trigger Distribution 3 ASIC architecture...4 I2C Interface 6 Tracker
More informationModules and Front-End Electronics Developments for the ATLAS ITk Strips Upgrade
Modules and Front-End Electronics Developments for the ATLAS ITk Strips Upgrade Carlos García Argos, on behalf of the ATLAS ITk Collaboration University of Freiburg International Conference on Technology
More information6. Latches and Memories
6 Latches and Memories This chapter . RS Latch The RS Latch, also called Set-Reset Flip Flop (SR FF), transforms a pulse into a continuous state. The RS latch can be made up of two interconnected
More informationPrototype of SRAM by Sergey Kononov, et al.
Prototype of SRAM by Sergey Kononov, et al. 1. Project Overview The goal of the project is to create a SRAM memory layout that provides maximum utilization of the space on the 1.5 by 1.5 mm chip. Significant
More informationESA-CNES Deep Sub-Micron program ST 65nm. Laurent Dugoujon Remy Chevallier STMicroelectronics Grenoble, France.
ESA-CNES Deep Sub-Micron program ST 65nm Laurent Dugoujon Remy Chevallier STMicroelectronics Grenoble, France. Agenda 2 Presentation DSM 65nm challenges DSM 65nm Supply-chain actors ESA-CNES 65nm Program
More informationFaults are often modeled according two fault models: Bit-set (resp. Bit-reset) Bit-flip
FDTC 2013 Fault Model Analysis of Laser-Induced Faults in SRAM Memory Cells Cyril Roscian, Alexandre Sarafianos, Jean-Max Dutertre, Assia Tria Secured Architecture and System Laboratory Centre Microélectronique
More informationFile: 'ReportV37P-CT89533DanSuo.doc' CMPEN 411, Spring 2013, Homework Project 9 chip, 'Tiny Chip' fabricated through MOSIS program
MOSIS Chip Test Report Dan Suo File: 'ReportV37P-CT89533DanSuo.doc' CMPEN 411, Spring 2013, Homework Project 9 chip, 'Tiny Chip' fabricated through MOSIS program Technology: 0.5um CMOS, ON Semiconductor
More informationNevis ADC Design. Jaroslav Bán. Columbia University. June 4, LAr ADC Review. LAr ADC Review. Jaroslav Bán
Nevis ADC Design Columbia University June 4, 2014 Outline The goals of the project Introductory remarks The road toward the design Components developed in Nevis09, Nevis10 and Nevis12 Nevis13 chip Architecture
More informationMöglichkeiten der Fehlersuche / Fehlerbehebung am fertigen ASIC Chip
Möglichkeiten der Fehlersuche / Fehlerbehebung am fertigen ASIC Chip am Beispiel des Beetle readout chip GSI Darmstadt former: MPI for Nuclear Physics, Heidelberg Agenda Unsightly behaviours - patches
More informationComparison of SET-Resistant Approaches for Memory-Based Architectures
Comparison of SET-Resistant Approaches for Memory-Based Architectures Daniel R. Blum and José G. Delgado-Frias School of Electrical Engineering and Computer Science Washington State University Pullman,
More informationA Configurable Radiation Tolerant Dual-Ported Static RAM macro, designed in a 0.25 µm CMOS technology for applications in the LHC environment.
A Configurable Radiation Tolerant Dual-Ported Static RAM macro, designed in a 0.25 µm CMOS technology for applications in the LHC environment. 8th Workshop on Electronics for LHC Experiments 9-13 Sept.
More informationA Double-Node-Upset Self-Recoverable Latch Design for High Performance and Low Power Application
> REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER (DOUBLE-CLICK HERE TO EDIT) < 1 A Double-Node-Upset Self-Recoverable Latch Design for High Performance and Low Power Application Aibin Yan, Kang
More informationSecure Smartcard Design against Laser Fault Injection. FDTC 2007, September 10 th Odile DEROUET
Secure Smartcard Design against Laser Fault Injection FDTC 2007, September 10 th Odile DEROUET Agenda Fault Attacks on Smartcard Laser Fault Injection Our experiment Background on secure hardware design
More informationSketch A Transistor-level Schematic Of A Cmos 3-input Xor Gate
Sketch A Transistor-level Schematic Of A Cmos 3-input Xor Gate DE09 DIGITALS ELECTRONICS 3 (For Mod-m Counter, we need N flip-flops (High speeds are possible in ECL because the transistors are used in
More informationThe CCU25: a network oriented Communication and Control Unit integrated circuit in a 0.25 µm CMOS technology.
The 25: a network oriented Communication and Control Unit integrated circuit in a 0.25 µm CMOS technology. C. Paillard, C. Ljuslin, A. Marchioro CERN, 1211 Geneva 23, Switzerland Christian.Paillard@cern.ch
More informationInvestigation of Proton Induced Radiation Effects in 0.15 µm Antifuse FPGA
Investigation of Proton Induced Radiation Effects in 0.15 µm Antifuse FPGA Vlad-Mihai PLACINTA 1,2, Lucian Nicolae COJOCARIU 1, Florin MACIUC 1 1. Horia Hulubei National Institute for R&D in Physics and
More informationImproving the Fault Tolerance of a Computer System with Space-Time Triple Modular Redundancy
Improving the Fault Tolerance of a Computer System with Space-Time Triple Modular Redundancy Wei Chen, Rui Gong, Fang Liu, Kui Dai, Zhiying Wang School of Computer, National University of Defense Technology,
More informationReliability Improvement in Reconfigurable FPGAs
Reliability Improvement in Reconfigurable FPGAs B. Chagun Basha Jeudis de la Comm 22 May 2014 1 Overview # 2 FPGA Fabrics BlockRAM resource Dedicated multipliers I/O Blocks Programmable interconnect Configurable
More informationHamming FSM with Xilinx Blind Scrubbing - Trick or Treat
Hamming FSM with Xilinx Blind Scrubbing - Trick or Treat Jano Gebelein Infrastructure and Computer Systems in Data Processing (IRI) Frankfurt University Germany January 31st, 2012 Mannheim, Germany 1 Outline
More informationElectromagnetic Compatibility ( EMC )
Electromagnetic Compatibility ( EMC ) ESD Strategies in IC and System Design 8-1 Agenda ESD Design in IC Level ( ) Design Guide Lines CMOS Design Process Level Method Circuit Level Method Whole Chip Design
More informationEE 330 Spring 2018 Laboratory 2: Basic Boolean Circuits
EE 330 Spring 2018 Laboratory 2: Basic Boolean Circuits Contents Objective:... 2 Part 1: Introduction... 2 Part 2 Simulation of a CMOS Inverter... 3 Part 2.1 Attaching technology information... 3 Part
More informationNEPP Independent Single Event Upset Testing of the Microsemi RTG4: Preliminary Data
NEPP Independent Single Event Upset Testing of the Microsemi RTG4: Preliminary Data Melanie Berg, AS&D in support of NASA/GSFC Melanie.D.Berg@NASA.gov Kenneth LaBel, NASA/GSFC Jonathan Pellish, NASA/GSFC
More informationIntroduction to laboratory exercises in Digital IC Design.
Introduction to laboratory exercises in Digital IC Design. A digital ASIC typically consists of four parts: Controller, datapath, memory, and I/O. The digital ASIC below, which is an FFT/IFFT co-processor,
More informationSense Amplifiers 6 T Cell. M PC is the precharge transistor whose purpose is to force the latch to operate at the unstable point.
Announcements (Crude) notes for switching speed example from lecture last week posted. Schedule Final Project demo with TAs. Written project report to include written evaluation section. Send me suggestions
More informationDevelopment and implementation of the treatment control system in Shanghai Proton Therapy Facility
Development and implementation of the treatment control system in Shanghai Proton Therapy Facility Ming Liu Electronics Group, Division of Beam Diagnostics & Control Technology Shanghai Synchrotron Radiation
More informationCS250 VLSI Systems Design Lecture 9: Memory
CS250 VLSI Systems esign Lecture 9: Memory John Wawrzynek, Jonathan Bachrach, with Krste Asanovic, John Lazzaro and Rimas Avizienis (TA) UC Berkeley Fall 2012 CMOS Bistable Flip State 1 0 0 1 Cross-coupled
More informationOutline of Presentation Field Programmable Gate Arrays (FPGAs(
FPGA Architectures and Operation for Tolerating SEUs Chuck Stroud Electrical and Computer Engineering Auburn University Outline of Presentation Field Programmable Gate Arrays (FPGAs( FPGAs) How Programmable
More informationA Possible Redundancy System for Opto-Links
A Possible Redundancy System for Opto-Links A. Adair, W. Fernando, K.K. Gan, H.P. Kagan, R.D. Kass, H. Merritt, J. Moore, A. Nagarkar, S. Smith, M. Strang The Ohio State University P. Buchholz, A. Wiese,
More informationSpaceWire IP Cores for High Data Rate and Fault Tolerant Networking
SpaceWire IP Cores for High Data Rate and Fault Tolerant Networking E. Petri 1,2, T. Bacchillone 1,2, N. E. L Insalata 1,2, T. Cecchini 1, I. Del Corona 1,S. Saponara 1, L. Fanucci 1 (1) Dept. of Information
More informationSEE Tolerant Self-Calibrating Simple Fractional-N PLL
SEE Tolerant Self-Calibrating Simple Fractional-N PLL Robert L. Shuler, Avionic Systems Division, NASA Johnson Space Center, Houston, TX 77058 Li Chen, Department of Electrical Engineering, University
More informationMicrocomputers. Outline. Number Systems and Digital Logic Review
Microcomputers Number Systems and Digital Logic Review Lecture 1-1 Outline Number systems and formats Common number systems Base Conversion Integer representation Signed integer representation Binary coded
More informationTransient Latch-up in Large NFET Switch Arrays. Nathaniel Peachey, RFMD, Inc. Rick Phelps, IBM, Inc.
Transient Latch-up in Large NFET Switch Arrays Nathaniel Peachey, RFMD, Inc. Rick Phelps, IBM, Inc. Biography Nathaniel (Nate) Peachey received his Ph.D. in Physical Chemistry in 1994 from the University
More informationMEMORIES. Memories. EEC 116, B. Baas 3
MEMORIES Memories VLSI memories can be classified as belonging to one of two major categories: Individual registers, single bit, or foreground memories Clocked: Transparent latches and Flip-flops Unclocked:
More informationMemory. Outline. ECEN454 Digital Integrated Circuit Design. Memory Arrays. SRAM Architecture DRAM. Serial Access Memories ROM
ECEN454 Digital Integrated Circuit Design Memory ECEN 454 Memory Arrays SRAM Architecture SRAM Cell Decoders Column Circuitry Multiple Ports DRAM Outline Serial Access Memories ROM ECEN 454 12.2 1 Memory
More informationCurrent status of SOI / MPU and ASIC development for space
The 23rd Microelectronics Workshop Current status of SOI / MPU and ASIC development for space Nov. 11 th 2010 Electronic Devices and Materials Group Aerospace Research and Development Directorate, JAXA
More informationOutline. Parity-based ECC and Mechanism for Detecting and Correcting Soft Errors in On-Chip Communication. Outline
Parity-based ECC and Mechanism for Detecting and Correcting Soft Errors in On-Chip Communication Khanh N. Dang and Xuan-Tu Tran Email: khanh.n.dang@vnu.edu.vn VNU Key Laboratory for Smart Integrated Systems
More informationSingle Event Latchup Power Switch Cell Characterisation
Single Event Latchup Power Switch Cell Characterisation Vladimir Petrovic, Marko Ilic, Gunter Schoof Abstract - In this paper are described simulation and measurement processes of a power switch cell used
More informationRadiation-Hard/High-Speed Parallel Optical Links
Radiation-Hard/High-Speed Parallel Optical Links K.K. Gan, H. Kagan, R. Kass, J. Moore, D.S. Smith The Ohio State University P. Buchholz, M. Ziolkowski Universität Siegen July 3, 2013 K.K. Gan RD13 1 Outline
More informationMCC-DSM Specifications
DETECTOR CHIP BUMP ELECTRONIC CHIP MCC Design Group Receiver Issue: Revision: 0.1 Reference: ATLAS ID-xx Created: 30 September 2002 Last modified: 7 October 2002 03:18 Edited By: R. Beccherle and G. Darbo
More informationSINGLE BOARD COMPUTER FOR SPACE
SINGLE BOARD COMPUTER FOR SPACE Proven in Space Best Single Event Performance Seamless Error Correction Wide Range of Processing Power Highest Design Margin SCS750 FLIGHT MODULE Overview of Specifications
More informationDesign Status of the CERN-SRAM macrocell
Design Status of the CERN-SRAM macrocell IBM 0.25 µm User Group Meeting Imperial College, London June 2002 KLOUKINAS Kostas EP/CME-PS CERN-SRAM specifications Scalable Design Configurable Bit organization
More informationMemory in Digital Systems
MEMORIES Memory in Digital Systems Three primary components of digital systems Datapath (does the work) Control (manager) Memory (storage) Single bit ( foround ) Clockless latches e.g., SR latch Clocked
More informationAutomatic Stress Effects Computation Based On A Layout Generation Tool For Analog IC
2010 IEEE International Behavioral Modeling and Simulation Conference Modeling for Physical Design Session Automatic Stress Effects Computation Based On A Layout Generation Tool For Analog IC Stephanie
More informationCMOS Process Flow. Layout CAD Tools
CMOS Process Flow See supplementary power point file for animated CMOS process flow (see class ece410 website and/or* http://www.multimedia.vt.edu/ee5545/): This file should be viewed as a slide show It
More informationStudy on FPGA SEU Mitigation for Readout Electronics of DAMPE BGO Calorimeter
Study on FPGA SEU Mitigation for Readout Electronics of AMPE BGO Calorimeter Zhongtao Shen, Changqing Feng, Shanshan Gao, eliang Zhang, i Jiang, Shubin Liu, i An Abstract The BGO calorimeter, which provides
More informationCPE/EE 427, CPE 527, VLSI Design I: Tutorial #1, Full Custom VLSI (inverter layout)
CPE/EE 427, CPE 527, VLSI Design I: Tutorial #1, Full Custom VLSI (inverter layout) Joel Wilder, Aleksandar Milenkovic, ECE Dept., The University of Alabama in Huntsville Adapted from Virginia Tech, Dept.
More informationSAN FRANCISCO, CA, USA. Ediz Cetin & Oliver Diessel University of New South Wales
SAN FRANCISCO, CA, USA Ediz Cetin & Oliver Diessel University of New South Wales Motivation & Background Objectives & Approach Our technique Results so far Work in progress CHANGE 2012 San Francisco, CA,
More informationExpected feedback from 3D for SLHC Introduction. LHC 14 TeV pp collider at CERN start summer 2008
Introduction LHC 14 TeV pp collider at CERN start summer 2008 Gradual increase of luminosity up to L = 10 34 cm -2 s -1 in 2008-2011 SLHC - major increase of luminosity up to L = 10 35 cm -2 s -1 in 2016-2017
More informationPOWER ANALYSIS RESISTANT SRAM
POWER ANALYSIS RESISTANT ENGİN KONUR, TÜBİTAK-UEKAE, TURKEY, engin@uekae.tubitak.gov.tr YAMAN ÖZELÇİ, TÜBİTAK-UEKAE, TURKEY, yaman@uekae.tubitak.gov.tr EBRU ARIKAN, TÜBİTAK-UEKAE, TURKEY, ebru@uekae.tubitak.gov.tr
More informationCMOS INVERTER LAYOUT TUTORIAL
PRINCESS SUMAYA UNIVERSITY FOR TECHNOLOGY CMOS INVERTER LAYOUT TUTORIAL We will start the inverter by drawing a PMOS. The first step is to draw a poly layer. Click on draw a rectangle and choose the poly
More informationLab 2. Standard Cell layout.
Lab 2. Standard Cell layout. The purpose of this lab is to demonstrate CMOS-standard cell design. Use the lab instructions and the cadence manual (http://www.es.lth.se/ugradcourses/cadsys/cadence.html)
More informationSingle-Strip Static CMOS Layout
EE244: Design Technology for Integrated Circuits and Systems Outline Lecture 6.2 Regular Module Structures CMOS Synthetic Libraries Weinberger Arrays Gate Matrix Programmable Logic Array (PLA) Storage
More informationPLAs & PALs. Programmable Logic Devices (PLDs) PLAs and PALs
PLAs & PALs Programmable Logic Devices (PLDs) PLAs and PALs PLAs&PALs By the late 1970s, standard logic devices were all the rage, and printed circuit boards were loaded with them. To offer the ultimate
More informationMemory in Digital Systems
MEMORIES Memory in Digital Systems Three primary components of digital systems Datapath (does the work) Control (manager) Memory (storage) Single bit ( foround ) Clockless latches e.g., SR latch Clocked
More informationRadiation hard design in CMOS image sensors. Bart Dierickx, Caeleste CPIX Workshop sept 2014, Bonn
Radiation hard design in CMOS image sensors Bart Dierickx, Caeleste CPIX Workshop 15-17 sept 2014, Bonn Outline Introduction Total dose Total ionizon dose TID Displacement damage DD Single events SEU single
More informationUNIT 6 CIRCUIT DESIGN
UNIT 6 CIRCUIT DESIGN 1 2 HIERARCHY DESIGN CMOS LOGIC CIRCUIT DESIGN Learning outcomes FOR HIERARCHY DESIGN Student should be able to: Define hierarchy design. Explain the levels of hierarchical design.
More informationDigital Fundamentals. Integrated Circuit Technologies
Digital Fundamentals Integrated Circuit Technologies 1 Objectives Determine the noise margin of a device from data sheet parameters Calculate the power dissipation of a device Explain how propagation delay
More information! Memory. " RAM Memory. " Serial Access Memories. ! Cell size accounts for most of memory array size. ! 6T SRAM Cell. " Used in most commercial chips
ESE 57: Digital Integrated Circuits and VLSI Fundamentals Lec : April 5, 8 Memory: Periphery circuits Today! Memory " RAM Memory " Architecture " Memory core " SRAM " DRAM " Periphery " Serial Access Memories
More informationESE570 Spring University of Pennsylvania Department of Electrical and System Engineering Digital Integrated Cicruits AND VLSI Fundamentals
University of Pennsylvania Department of Electrical and System Engineering Digital Integrated Cicruits AND VLSI Fundamentals ESE570, Spring 2019 HW5: Delay and Layout Sunday, February 17th Due: Friday,
More informationLEON3-Fault Tolerant Design Against Radiation Effects ASIC
LEON3-Fault Tolerant Design Against Radiation Effects ASIC Microelectronic Presentation Days 3 rd Edition 7 March 2007 Table of Contents Page 2 Project Overview Context Industrial Organization LEON3-FT
More information250nm Technology Based Low Power SRAM Memory
IOSR Journal of VLSI and Signal Processing (IOSR-JVSP) Volume 5, Issue 1, Ver. I (Jan - Feb. 2015), PP 01-10 e-issn: 2319 4200, p-issn No. : 2319 4197 www.iosrjournals.org 250nm Technology Based Low Power
More informationFABRICATION TECHNOLOGIES
FABRICATION TECHNOLOGIES DSP Processor Design Approaches Full custom Standard cell** higher performance lower energy (power) lower per-part cost Gate array* FPGA* Programmable DSP Programmable general
More informationResults of Radiation Test of the Cathode Front-end Board for CMS Endcap Muon Chambers
Results of Radiation Test of the Cathode Front-end Board for CMS Endcap Muon Chambers B. Bylsma 1, L.S. Durkin 1, J. Gu 1, T.Y. Ling 1, M. Tripathi 2 1 Department of Physics, Ohio State University, Columbus,
More informationCMP annual meeting, January 23 rd, 2014
J.P.Nozières, G.Prenat, B.Dieny and G.Di Pendina Spintec, UMR-8191, CEA-INAC/CNRS/UJF-Grenoble1/Grenoble-INP, Grenoble, France CMP annual meeting, January 23 rd, 2014 ReRAM V wr0 ~-0.9V V wr1 V ~0.9V@5ns
More information9. SEU Mitigation in Cyclone IV Devices
9. SEU Mitigation in Cyclone IV Devices May 2013 CYIV-51009-1.3 CYIV-51009-1.3 This chapter describes the cyclical redundancy check (CRC) error detection feature in user mode and how to recover from soft
More informationMicroelectronics Presentation Days March 2010
Microelectronics Presentation Days March 2010 FPGA for Space Bernard Bancelin for David Dangla Atmel ASIC BU Aerospace Product Line Everywhere You Are Atmel Radiation Hardened FPGAs Re-programmable (SRAM
More informationLogic Circuits II ECE 2411 Thursday 4:45pm-7:20pm. Lecture 3
Logic Circuits II ECE 2411 Thursday 4:45pm-7:20pm Lecture 3 Lecture 3 Topics Covered: Chapter 4 Discuss Sequential logic Verilog Coding Introduce Sequential coding Further review of Combinational Verilog
More informationLatch-up Verification / Rule Checking Throughout Circuit Design Flow
Latch-up Verification / Rule Checking Throughout Circuit Design Flow Michael Khazhinsky ESD and Latch-up Design Silicon Labs April 2016 Motivation The verification of latch-up protection networks in modern
More informationRadiation test and application of FPGAs in the Atlas Level 1 Trigger.
Radiation test and application of FPGAs in the Atlas Level 1 Trigger. V.Bocci (1), M. Carletti (2), G.Chiodi (1), E. Gennari (1), E.Petrolo (1), A.Salamon (1), R. Vari (1),S.Veneziano (1) (1) INFN Roma,
More informationChapter 8. Coping with Physical Failures, Soft Errors, and Reliability Issues. System-on-Chip EE141 Test Architectures Ch. 8 Physical Failures - P.
Chapter 8 Coping with Physical Failures, Soft Errors, and Reliability Issues System-on-Chip EE141 Test Architectures Ch. 8 Physical Failures - P. 1 1 What is this chapter about? Gives an Overview of and
More informationTitle Laser testing and analysis of SEE in DDR3 memory components
Title Laser testing and analysis of SEE in DDR3 memory components Name P. Kohler, V. Pouget, F. Wrobel, F. Saigné, P.-X. Wang, M.-C. Vassal pkohler@3d-plus.com 1 Context & Motivation Dynamic memories (DRAMs)
More informationThe Phase-2 ATLAS ITk Pixel Upgrade
The Phase-2 ATLAS ITk Pixel Upgrade T. Flick (University of Wuppertal) - on behalf of the ATLAS collaboration 14th Topical Seminar on Innovative Particle and Radiation Detectors () 03.-06. October 2016
More informationEECS 151/251A: SRPING 2017 MIDTERM 1
University of California College of Engineering Department of Electrical Engineering and Computer Sciences E. Alon Thursday, Mar 2 nd, 2017 7:00-8:30pm EECS 151/251A: SRPING 2017 MIDTERM 1 NAME Last First
More informationLA-UR- Title: Author(s): Intended for: Approved for public release; distribution is unlimited.
LA-UR- Approved for public release; distribution is unlimited. Title: Author(s): Intended for: Los Alamos National Laboratory, an affirmative action/equal opportunity employer, is operated by the Los Alamos
More informationLecture 13: SRAM. Slides courtesy of Deming Chen. Slides based on the initial set from David Harris. 4th Ed.
Lecture 13: SRAM Slides courtesy of Deming Chen Slides based on the initial set from David Harris CMOS VLSI Design Outline Memory Arrays SRAM Architecture SRAM Cell Decoders Column Circuitry Multiple Ports
More informationDevelopment Status for JAXA Critical Parts, 2008
The 21st Microelectronics Workshop Development Status for JAXA Critical Parts, 2008 Oct. 7th 2008 Electronic Components and Devices Group Aerospace Research and Development Directorate, JAXA Hiroyuki SHINDOU
More informationMultiChipSat: an Innovative Spacecraft Bus Architecture. Alvar Saenz-Otero
MultiChipSat: an Innovative Spacecraft Bus Architecture Alvar Saenz-Otero 29-11-6 Motivation Objectives Architecture Overview Other architectures Hardware architecture Software architecture Challenges
More informationFPGA Programming Technology
FPGA Programming Technology Static RAM: This Xilinx SRAM configuration cell is constructed from two cross-coupled inverters and uses a standard CMOS process. The configuration cell drives the gates of
More informationThin n-in-p planar pixel modules for the ATLAS upgrade at HL-LHC
Thin n-in-p planar pixel modules for the ATLAS upgrade at HL-LHC A. Macchiolo, J. Beyer, A. La Rosa, R. Nisius, N. Savic Max-Planck-Institut für Physik, Munich 8 th International Workshop on Semiconductor
More information10. Interconnects in CMOS Technology
10. Interconnects in CMOS Technology 1 10. Interconnects in CMOS Technology Jacob Abraham Department of Electrical and Computer Engineering The University of Texas at Austin VLSI Design Fall 2017 October
More informationAn Energy-Efficient Scan Chain Architecture to Reliable Test of VLSI Chips
An Energy-Efficient Scan Chain Architecture to Reliable Test of VLSI Chips M. Saeedmanesh 1, E. Alamdar 1, E. Ahvar 2 Abstract Scan chain (SC) is a widely used technique in recent VLSI chips to ease the
More informationHighly Reliable Radiation Hardened Memory Cell for FINFET Technology
Highly Reliable Radiation Hardened Memory Cell for FINFET Technology Shantha Devi.P 1, Vennila.P 2, Ramya.M 3, Krishnakumar.S 4 1PG Scholar,Department of ECE,Theni Kammavar Sangam College of Technology,Tamilnadu,India.
More informationRadiation Hardened System Design with Mitigation and Detection in FPGA
Master of Science Thesis in Electrical Engineering Department of Electrical Engineering, Linköping University, 2016 Radiation Hardened System Design with Mitigation and Detection in FPGA Hampus Sandberg
More informationFlash memory cells data loss caused by total ionizing dose and heavy ions
Cent. Eur. J. Phys. 12(10) 2014 725-729 DOI: 10.2478/s11534-014-0503-6 Central European Journal of Physics Flash memory cells data loss caused by total ionizing dose and heavy ions Research Article Andrey
More informationSingle Event Upset Mitigation Techniques for SRAM-based FPGAs
Single Event Upset Mitigation Techniques for SRAM-based FPGAs Fernanda de Lima, Luigi Carro, Ricardo Reis Universidade Federal do Rio Grande do Sul PPGC - Instituto de Informática - DELET Caixa Postal
More informationSummary of Optical Link R&D
Summary of Optical Link R&D K.K. Gan The Ohio State University November 6, 2008 K.K. Gan ATLAS Tracker Upgrade Workshop 1 Outline Introduction Plan for insertable B-layer Status of Versatile Link Project
More informationA Review Paper on Reconfigurable Techniques to Improve Critical Parameters of SRAM
IJSRD - International Journal for Scientific Research & Development Vol. 4, Issue 09, 2016 ISSN (online): 2321-0613 A Review Paper on Reconfigurable Techniques to Improve Critical Parameters of SRAM Yogit
More information8.3.4 The Four-Transistor (4-T) Cell
전자회로 II 제 10 주 1 강 8.3.4 The Four-Transistor (4-T) Cell Static memory design has shorter access times than dynamic design 6-T static cell provides a to drive the sense amplifier Figure 8.19 : 4-T dynamic
More informationMethodology on Extracting Compact Layout Rules for Latchup Prevention in Deep-Submicron Bulk CMOS Technology
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 16, NO. 2, MAY 2003 319 Methodology on Extracting Compact Layout Rules for Latchup Prevention in Deep-Submicron Bulk CMOS Technology Ming-Dou Ker,
More informationTU Wien. Fault Isolation and Error Containment in the TT-SoC. H. Kopetz. TU Wien. July 2007
TU Wien 1 Fault Isolation and Error Containment in the TT-SoC H. Kopetz TU Wien July 2007 This is joint work with C. El.Salloum, B.Huber and R.Obermaisser Outline 2 Introduction The Concept of a Distributed
More information