Mälu interfeisid Arvutikomponendid Ergo Nõmmiste

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1 Mälu interfeisid Arvutikomponendid Ergo Nõmmiste

2 Mälu liigid Read-only memory (ROM) Flash memory (EEPROM) Static random access memory (SRAM) Dynamic random access memoty (DRAM) 1 kbaidine mälu vajab 10 aadressbitti, 1Mbaidine 20 aadressbitti Chip select (CS), Chip Enable (CE), Select (S)

3 ROM EPROM-erasable programmable readonly memory; PROMprogrammable readonly memory; RMM- read mostly memory (flash memory); EEPROMelectrically erasable programmable ROM; 2716, 2k*8 EPROM EAROM- electrically alterable ROM

4 EEPROM EEPROM transistor on nagu NMOS transistor, aga kahe paisuga, teine nendest on nn. ujuv (floating) ning pole ühendatud mingi muu transistori osaga. Programmeerimisel antakse V e-le normaalsest kõrgem pinge (tavaliselt 12 V). Selle tagajärjel tekib Fowler- Nordheim tunneleerimine, kus osa elektrone liigub isoleeritud alasse. Normaaloperatsioonis ei lase need tunneleerunud elektronid enam teisi elektrone kanalisse ja transistor on välja lülitatud. Kustutamine toimub vastandpolaarse pingega.

5 ROM aegdiagramm

6 Staatiline RAM (SRAM) k*8 SRAM Juurdepääsu aeg alla 250 ns

7 Staatiline RAM (SRAM) k*8 SRAM. Juurdepääsu aeg 100 ns. Tänapäevaste SRAM-ide juurdepääsu ajad on alla 10ns.

8 Dünaamilised RAM-id (DRAM) k*1 DRAM 70 ns juurdepääsuaeg CAS- column address strobe RAS- row address strobe Värskendamine (refresh) on vajalik iga mõne ms järgi

9 SIMM- Single in-line Memory Modules 30 pinnine SIMM on organiseeritud kui 4M*9 maatriks, 72 pinnine kui 4M*36 maatriks

10 DIMM- Dual in-line Memory Modules 168 bitine DIMM

11 Aadresside dekodeerimine Lihtne NAND dekooder, mid saab kasutada 2716 EPROM kivide dekodeerimiseks aadresside vahemikus FF800H-FFFFFH

12 74LS dekooder

13 74LS dekoodri kasutamine k*8 mälusegmendi dekodeerimiseks Valitud aadresside vahemik on F0000H-FFFFFH

14 Topelt 2-4 dekooder (74LS139)

15 PROM-i kasutamine dekoodrina TPB28L42 512*8 PROM kui aadressdekooder

16 PROM-i kasutamine dekoodrina 82S147 PROM programmeerimine dekoodrina

17 PLA (programmable logic array) kasutamine dekoodrina Kolm terminit, mis tegelikult on sama funktsiooniga: PLA- programmable logic array; PAL- programmable array logic; GAL- gated array logic Sisuliselt on nad kombinatoorsete loogikaskeemide programmeeritavad maatriksid. Näiteks PAL16L8-10 fikseeritud sisendit, kask fikseeritud väljundit ja 6 pinni, mida saab programmeerida kas sisendi või väljundina.

18 PAL 16L8 kasutamine dekoodrina Dekodeeritakse kaheksa 2784 (8k*8) mäluelementi

19 8088 ja mälu interfeisid (baidi laiused) (4k * 8) EPROM kivi ühendatud 8088 protsessoriga. Kuna 2732 on aeglasem kui nõutud, on vajalik genereerida 1 (200ns) ooteolek.

20 SRAM (32k*8) ühendamine 8088-ge Kuna SRAM on kiire, siis ooteolekuid ei pea genereerima

21 8088 ühendamine flash mäluga 28F400 28F400 on kasutatav kas 512k*8 või 256k*16 konfiguratsioonis. VPP = 12V ja PWD (power down) kasutatakse programmeerimisel.

22 Paarsuskontroll 9 bitine paarsusgeneraator/detektor

23 Paarsuskontroll 64kbaiti mälusüsteem, mis sisaldab paarsuskontrolli

24 Veaparandus ja 74LS636 kivi Töötab, kui on vead ühes bitis, kahe biti vea korral korrektsioon ei õnnestu. ECC (error correction code). 8 andmete I/O pinni, viis kontroll I/O pinni, kaks kontrollpinni (S0 ja S1), kaks veaväljundit-single error flag SEF ja double error flag (DEF)

25 Vea detekteerimine ja parandus kasutades 74LS636 kivi

26 8086, ja mälu interfeisid (sõna laiused) Paaris- ja paaritud aadressid

27 Eraldi dekoodrid mälu blokkidele (banks) 64 kb mälukivid. 24 bitine aadresssiin. Kogu mälu suurus on 1 Mb, aadresside vahemik H- 0FFFFFH

28 Eraldi kirjutamisstroobid mälublokkidele Alternatiiv iga mälubloki eraldi dekodeerimisele on kasutada kirjutamisstroobi.

29 Eraldi kirjutamisstroobid mälublokkidele Mälu paigutub aadressidele H-06FFFFH Mälukivid on Kb kivid

30 Mälusüsteem 8086 protsessorile on 16k*8 EPROM (paigutub aadressidele F0000H-FFFFFH), on 32*8 SRAM, (paigutub aadressidele 00000H-1FFFFH)

31 Mälusüsteem protsessorile on 64k*8 EPROM (paigutub aadressidele FC0000H-FFFFFFH), on 32*8 SRAM, (paigutub aadressidele H-01FFFFH)

32 32 bitised mälu interfeisid (80386DX ja 80486) Mälublokke juhitakse bus enable (BE) signaalidega, mitte aadresssiini bittidega A0 ja A1

33 Kirjutusstroobid (writestrobes) 32 bitisele süsteemile

34 Näide SRAM mälust protsessorile 256kb SRAM mälu (8 kivi 32k*8) 32 bitisele siinile. Mälu paigutub aadressidele H-0203FFFFH

35 64 bitine mälu interfeis (alates Pentiumist)

36 Kirjutusstroobid 64 bitise interfeisi korral

37 Näide mälusüsteemist alates Pentiumist on 64k*8 EPROM. Dekooder paigutab nad aadressidele FFF80000H- FFFFFFFFH

38 DRAM i värskendamine (refreshing) 256*1 DRAM i sisemine struktuur. Värskendamine toimub kas lugemis- või kirjutamistsüklite ajal. Mäluelementide, mida hetkel ei loeta ega kirjutada värskendamine saab toimuda paralleelselt aktiviseerides RAS stroobi. Mälu 256k*1 korral peab RAS stroob ilmnema vähemalt 15.6 µs järel. See teeb 5MHz kellaga protsessorile 5% ajakaotuse.

39 DRAM i värskendamine (refreshing) Aegdiagramm

40 Mälukontroller 82C08 Omab 18 aadressbitti (AL0-8 ja AH0-8). Aadressväljundid DRAM-I jaoks on AO0-AO8. RAS ja CAS genereeritakse sisemiselt CLK, S1 ja S2 signaalide abil. AA/XA kasutatakse kui on vaja genereerida ooteolekuid.

41 Näide 82C08 kasutamisest 1Mb mälusüsteem kasutab 4*256k SIMM i. Mälu on dekodeeritud aadressidele H-0FFFFFH

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