SEMESTER-2 (SYLLABUS)

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1 GOVERNMENT COLLEGE (A) RAJAMAHENDRAVARAM (Affiliated to Adikavi Nannaya University, Rajamahendravaram) CBCS Pattern w.e.f Admitted Batch ELECTRONICS - SEMESTER-2 (SYLLABUS) PAPER II - ELECTRONIC DEVICES & CIRCUITS UNIT- I JUNCTION DIODES: (12 hrs) Basic principles of Semiconductor materials classification energy bands in solids P and N type semiconductor materials energy band diagrams. PN junction diode - P-N junction theory-depletion region, barrier potential, working in forward & reverse bias condition, Junction capacitance, Diode current equation (no derivation), Effect of temperature on reverse saturation current, V-I Characteristics, Zener and Avalanche Break down, Zener diode Construction, Working and V-I characteristics, Voltage regulator using Zener diode - Tunnel diode and varactor Diode - Working & Applications. UNIT- II BIPOLAR JUNCTION TRANSISTS (BJT): (18 hrs) PNP and NPN transistors, current components in BJT, BJT static characteristics (Input and Output), Early effect, CB, CE,CC Configurations (Cut-off, Active and saturation regions), h- parameters, h-parameter equivalent circuit, CE configuration as two port network, The CE amplifier analysis and parameters. Thermal runaway, concept of stability and Stability factor factors affecting stability. Biasing and Load line analysis fixed bias and voltage divider bias arrangements, Transistor as a switch. UNIT - III FIELD EFFECT TRANSlST & UJT: (12 hrs) FET - Construction - Working Drain &Transfer characteristics -Parameters of FET FET as an amplifier. MOSFET- Enhancement MOSFET Depletion MOSFET Construction & Working and drain characteristics- Comparison of FET & BJT. UJT Construction-working, V-I Characteristics, Applications. Small signal FET models. UNIT IV PHOTO ELECTRIC DEVICES: (6 hrs) Structure and operation, characteristics and applications of LDR, Photo Voltaic cell, Photo diode. LED and LCD. Silicon controlled rectifier (SCR) construction, working and V- I characteristics, CRO construction, working and applications. UNIT - V POWER SUPPLIES: (12 hrs) Rectifiers - Half wave, full wave and bridge rectifiers - Efficiency - Ripple factor Regulation. Types of filters- Shunt capacitor, L-Section and π section filters and their working (no derivations) -Three terminal fixed voltage I.C regulators (78XX and 79XX) - Principle and working of switch mode power supplies (SMPS). TEXTBOOKS: 1. Electronic Devices and Circuits David A.Bell, Fifth edition. Oxford university press 2. A.P Malvino, "Principles of Electronics", TMH, 7th edition 3. T.F. Bogart, Beasley, "Electronic Devices and circuits", Pearson Education, 6th Edition 4. N.N. Bhargava, D.C Kulshreshta, and S.C Gupta,"Basic Electronics and Linear Circuits'' TMH 5. T.L.Floyd, "Electronic Devices and circuits", PHI, fifth edition

2 6. V.K. Metha, "Principle of Electronics", S CHAND Co. New edition 7. Godse A.P., Bakshi U.A (1st edition), Electronics Devices, Technical Publications rune. REFERENCE BOOKS: I. Sedha R.S., A TextBook of Applied Electronics, S. Chand & Company Ltd. 2. Jacob Millman and Christos C. Halkias (2008) Integrated Electronics, Tara Mcgraw-Hill 3. Robert L. Boylestad, Louis Nashelsky (10th edition). Electron 4. Devices and Circuit Theory, Dorling Kindersley (India Pvt. Ltd.) 5. Unified Electronics (Circuit analysis and electronic devices) by Agarwal-Arora.

3 GOVERNMENT COLLEGE (AUTONOMOUS), RAJAMAHENDRAVARAM DEPARTMENT OF ELECTRONICS ADDITIONAL INPUTS CLASS SEMESTER PAPER : I B.Sc : II : II (Module II) TITLE OF THE PAPER : ELECTRONIC DEVICES & CIRCUITS TOPICS IN THE UNIVERSITY SYLLABUS ADDITIONAL TOPICS INCLUDED UNDER AUTONOMOUS SETUP 1. JUNCTION DIODES 2. FIELD EFFECT TRANSlST & UJT 1. Basic principles of Semiconductor materials classification energy bands in solids P and N type semiconductor materials energy band diagrams. 2. Small signal FET models.

4 ELECTRONICS LAB II SEMESTER-2 (ELECTRONIC DEVICES&CIRCUITS LAB) Work load: 30 hrs per semester 2 hrs/week (Any Six Experiments should be done) 1. V-I Characteristics of Junction Diode. 2. V-I Characteristics of Zener Diode. 3. Regulated Power Supply using Zener Diode. 4. IC Regulated Power Supply (78XX) 5. BJT input and output Characteristics (CE Configuration) and determination of h-parameters. 6. Characteristics of UJT and determination of its parameters. 7. Characteristics of JFET and determination of its parameters. 8. LDR characteristics 9. Characteristics of L and π section filters using full wave rectifier. LAB MANUALS 1. Zbar, Malvino and Miller, Basic Electronics, A Text Lab Manual, Tata McGraw Hill. 2. Sugaraj Samuel R., Horsley Solomon, B.E.S. Practicals. The valuation of marks for the practical shall be as follows: Experiment 75 marks (i) Circuit diagram with details 13 m (ii) Formulas with units (iii) Tables with parameters and units (iv) Observations and performance (v) Calculations, Graph and Result (vi) Viva Voce (vii) Record 05 m 07 m 15 m 15 m 10 m 10 m

5 GOVERNMENT COLLEGE (A) RAJAMAHENDRAVARAM (Affiliated to Adikavi Nannaya University, Rajamahendravaram) CBCS Pattern w.e.f Admitted Batch ELECTRONICS - SEMESTER-2(MODEL QUESTION PAPER) PAPER II - ELECTRONIC DEVICES & CIRCUITS Time: 3 Hrs Max. Marks: 60 PART A Answer ALL questions. 4 X 8 = 32 Marks 1. (A) ESSAY QUESTIONS FROM UNIT I (B) ESSAY QUESTIONS FROM UNIT I 2. (A) ESSAY QUESTIONS FROM UNIT II (B) ESSAY QUESTIONS FROM UNIT II 3. (A) ESSAY QUESTIONS FROM UNIT III. (B) ESSAY QUESTIONS FROM UNIT III 4.. (A) ESSAY QUESTIONS FROM UNIT IV (B) ESSAY QUESTIONS FROM UNIT V PART B Answer any FIVE questions. 5 X 4 = 20 Marks (FIVE THEY QUESTIONS from each unit and THREE PROBLEMS FROM any unit) 5. Short answer question from UNIT I 6. Short answer question from UNIT II 7. Short answer question from UNIT III 8. Short answer question from UNIT IV 9. Short answer question from UNIT V 10. Problem from UNIT I 11. Problem from UNIT IV 12. Problem from UNIT V

6 PART C Answer all questions 13. Very short answer question from Unit I 14. Very short answer question from Unit II 15. Very short answer question from Unit III 16. Very short answer question from Unit IV 4 x 2 = 8 Marks

S.V.UNIVERSITY, TIRUPATI B.Sc- ELECTRONICS-SYLLABUS SEMESTER: II W.E.F PAPER 2 ELECTRONIC DEVICES&CIRCUITS

S.V.UNIVERSITY, TIRUPATI B.Sc- ELECTRONICS-SYLLABUS SEMESTER: II W.E.F. 2015-16 PAPER 2 ELECTRONIC DEVICES&CIRCUITS 3-2-110 (60hrs) UNIT I(12hrs) JUNCTION DIODES PN junction diode P-N junction theory-depletion