Two-wire Serial EEPROM AT24C01A AT24C02 AT24C04 AT24C08 (1) AT24C16 (2)
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- Wesley Haynes
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1 Features Low-voltage and Standard-voltage Operation.7 (V CC =.7V to.v).8 (V CC =.8V to.v) Internally Organized 8 x 8 (K), 6 x 8 (K), x 8 (4K), 04 x 8 (8K) or 048 x 8 (6K) Two-wire Serial Interface Schmitt Trigger, Filtered Inputs for Noise Suppression Bidirectional Data Transfer Protocol 00 khz (.8V) and 400 khz (.V,.7V, V) Compatibility Write Protect Pin for Hardware Data Protection 8-byte Page (K, K), 6-byte Page (4K, 8K, 6K) Write Modes Partial Page Writes Allowed Self-timed Write Cycle ( ms max) High-reliability Endurance: Million Write Cycles Data Retention: 00 Years Automotive Grade, Extended Temperature and Lead-free/Halogen-free Devices Available 8-lead PDIP, 8-lead JEDEC SOIC, 8-lead MAP, -lead SOT, 8-lead TSSOP and 8-ball dbg Packages Die Sales: Wafer Form, Waffle Pack and Bumped Wafers Description The AT4C0A/0/04/08/6 provides 04/048/4096/89/684 bits of serial electrically erasable and programmable read-only memory (EEPROM) organized as 8/6//04/048 words of 8 bits each. The device is optimized for use in many industrial and commercial applications where low-power and low-voltage operation are essential. The AT4C0A/0/04/08/6 is available in space-saving 8-lead PDIP, 8-lead JEDEC SOIC, 8-lead MAP, -lead SOT (AT4C0A/AT4C0/AT4C04), 8- lead TSSOP, and 8-ball dbg packages and is accessed via a Two-wire serial interface. In addition, the entire family is available in.7v (.7V to.v) and.8v (.8V to.v) versions. 8-lead TSSOP 8-lead SOIC Table. Pin Configuration Pin Name A0 - NC Function Address Inputs Serial Data Serial Clock Input Write Protect No Connect Ground Power Supply A0 A 4 8-ball dbg lead PDIP Bottom View A0 A A0 A 4 8-lead MAP Bottom View lead SOT A0 A Two-wire Serial EEPROM K (8 x 8) K (6 x 8) 4K ( x 8) 8K (04 x 8) 6K (048 x 8) AT4C0A AT4C0 AT4C04 AT4C08 () AT4C6 () Note:. This device is not recommended for new designs. Please refer to AT4C08A.. This device is not recommended for new designs. Please refer to AT4C6A. A0 A
2 Absolute Maximum Ratings Operating Temperature... C to + C Storage Temperature... 6 C to +0 C Voltage on Any Pin with Respect to Ground....0V to +7.0V Maximum Operating Voltage... 6.V *NOTICE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. DC Output Current....0 ma Figure. Block Diagram AT4C0A/0/04/08/6
3 AT4C0A/0/04/08/6 Pin Description SERIAL CLOCK (): The input is used to positive edge clock data into each EEPROM device and negative edge clock data out of each device. SERIAL DATA (): The pin is bidirectional for serial data transfer. This pin is open-drain driven and may be wire-ored with any number of other open-drain or opencollector devices. DEVICE/PAGE ADDRESSES (, A, A0): The, A and A0 pins are device address inputs that are hard wired for the AT4C0A and the AT4C0. As many as eight K/K devices may be addressed on a single bus system (device addressing is discussed in detail under the Device Addressing section). The AT4C04 uses the and A inputs for hard wire addressing and a total of four 4K devices may be addressed on a single bus system. The A0 pin is a no connect. The AT4C08 only uses the input for hardwire addressing and a total of two 8K devices may be addressed on a single bus system. The A0 and A pins are no connects. The AT4C6 does not use the device address pins, which limits the number of devices on a single bus to one. The A0, A and pins are no connects. WRITE PROTECT (): The AT4C0A/0/04/6 has a write protect pin that provides hardware data protection. The write protect pin allows normal read/write operations when connected to ground (). When the write protect pin is connected to V CC, the write protection feature is enabled and operates as shown in Table. Table. Write Protect Pin Status Part of the Array Protected 4C0A 4C0 4C04 4C08 () 4C6 () At V CC Full (K) Array Full (K) Array Full (4K) Array Normal Read/ Write Operation Upper Half (8K) Array At Normal Read/Write Operations Notes:. This device is not recommended for new designs. Please refer to AT4C08A.. This device is not recommended for new designs. Please refer to AT4C6A. Memory Organization AT4C0A, K SERIAL EEPROM: Internally organized with 6 pages of 8 bytes each, the K requires a 7-bit data word address for random word addressing. AT4C0, K SERIAL EEPROM: Internally organized with pages of 8 bytes each, the K requires an 8-bit data word address for random word addressing. AT4C04, 4K SERIAL EEPROM: Internally organized with pages of 6 bytes each, the 4K requires a 9-bit data word address for random word addressing. AT4C08, 8K SERIAL EEPROM: Internally organized with 64 pages of 6 bytes each, the 8K requires a 0-bit data word address for random word addressing. AT4C6, 6K SERIAL EEPROM: Internally organized with 8 pages of 6 bytes each, the 6K requires an -bit data word address for random word addressing.
4 Table. Pin Capacitance () Applicable over recommended operating range from T A = C, f =.0 MHz, V CC = +.8V. Symbol Test Condition Max Units Conditions C I/O Input/Output Capacitance () 8 pf V I/O = 0V C IN Input Capacitance (A 0, A, A, ) 6 pf V IN = 0V Note:. This parameter is characterized and is not 00% tested. Table 4. DC Characteristics Applicable over recommended operating range from: T AI = 40 C to +8 C, V CC = +.8V to +.V, V CC = +.8V to +.V (unless otherwise noted) Symbol Parameter Test Condition Min Typ Max Units V CC Supply Voltage.8. V V CC Supply Voltage.. V V CC Supply Voltage.7. V V CC4 Supply Voltage 4.. V I CC Supply Current V CC =.0V READ at 00 khz ma I CC Supply Current V CC =.0V WRITE at 00 khz.0.0 ma I SB Standby Current V CC =.8V V IN = V CC or V SS µa I SB Standby Current V CC =.V V IN = V CC or V SS µa I SB Standby Current V CC =.7V V IN = V CC or V SS µa I SB4 Standby Current V CC =.0V V IN = V CC or V SS µa I LI Input Leakage Current V IN = V CC or V SS µa I LO Output Leakage Current V OUT = V CC or V SS µa V IL Input Low Level () 0.6 V CC x 0. V V IH Input High Level () V CC x 0.7 V CC + 0. V V OL Output Low Level V CC =.0V I OL =. ma 0.4 V V OL Output Low Level V CC =.8V I OL = 0. ma 0. V Note:. V IL min and V IH max are reference only and are not tested. 4 AT4C0A/0/04/08/6
5 AT4C0A/0/04/08/6 Table. AC Characteristics Applicable over recommended operating range from T AI = 40 C to +8 C, V CC = +.8V to +.V, V CC = +.7V to +.V, CL = TTL Gate and 00 pf (unless otherwise noted) Symbol Parameter.8-volt.,.7,.0-volt Min Max Min Max f Clock Frequency, () khz t LOW Clock Pulse Width Low 4.7. µs t HIGH Clock Pulse Width High µs t I Noise Suppression Time () 00 0 ns t AA Clock Low to Data Out Valid µs t BUF Time the bus must be free before a new transmission can start () 4.7. µs t HD.STA Start Hold Time µs t SU.STA Start Setup Time µs t HD.DAT Data In Hold Time 0 0 µs t SU.DAT Data In Setup Time ns t R Inputs Rise Time ().0 0. µs t F Inputs Fall Time () ns t SU.STO Stop Setup Time µs t DH Data Out Hold Time 00 0 ns t WR Write Cycle Time ms Endurance ().0V, C, Byte Mode M M Note:. The 4C0A/0/04 bearing the process letter D on the package (the mark is located in the lower right corner on the top side of the package), guarantees 400 khz (..0V).. This parameter is characterized and is not 00% tested. Units Write Cycles
6 AT4C0A/0/04/08/6 AT4C0A Ordering Information () Ordering Code Package Operation Range AT4C0A-0PI-.7 AT4C0A-0SI-.7 AT4C0A-0TI-.7 AT4C0A-0PI-.8 AT4C0A-0SI-.8 AT4C0A-0TI-.8 AT4C0A-0PU-.7 () AT4C0A-0PU-.8 () AT4C0A-0SU-.7 () AT4C0A-0SU-.8 () AT4C0A-0TU-.7 () AT4C0A-0TU-.8 () AT4C0A-0TSU-.8 () AT4C0AU-0UU-.8 () AT4C0AY-0YU-.8 () AT4C0A-W.7- () AT4C0A-W.8- () TS 8U 8Y Die Sale Die Sale Lead-free/Halogen-free/ Notes:. For.7V devices used in the 4.V to.v range, please refer to performance values in the AC and DC characteristics table.. U designates Green Package & RoHS compliant.. Available in waffle pack and wafer form; order as SL79 for wafer form. Bumped die available upon request. Please contact Serial EEPROM Marketing. Package Type 8-lead, 0.00" Wide, Plastic Dual Inline Package (PDIP) 8-lead, 0.0" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC) 8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP) 8Y 8-lead, 4.90 mm x.00 mm Body, Dual Footprint, Non-leaded, Miniature Array Package (MAP) TS -lead,.90 mm x.60 mm Body, Plastic Thin Shrink Small Outline Package (SOT) 8U- 8-ball, die Ball Grid Away Package (dbg) Options.7 Low-voltage (.7V to.v).8 Low-voltage (.8V to.v)
7 AT4C0 Ordering Information () Ordering Code Package Operation Range AT4C0-0PI-.7 AT4C0N-0SI-.7 AT4C0-0TI-.7 AT4C0-0PI-.8 AT4C0N-0SI-.8 AT4C0-0TI-.8 AT4C0-0PU-.7 () AT4C0-0PU-.8 () AT4C0N-0SU-.7 () AT4C0N-0SU-.8 () AT4C0-0TU-.7 () AT4C0-0TU-.8 () AT4C0Y-0YU-.8 () AT4C0-0TSU-.8 () AT4C0U-0UU-.8 () AT4C0-W.7- () AT4C0-W.8- () 8Y TS 8U- Die Sale Die Sale Lead-free/Halogen-free/ Notes:. For.7V devices used in the 4.V to.v range, please refer to performance values in the AC and DC characteristics table.. U designates Green Package & RoHS compliant.. Available in waffle pack and wafer form; order as SL79 for wafer form. Bumped die available upon request. Please contact Serial EEPROM Marketing. Package Type 8-lead, 0.00" Wide, Plastic Dual Inline Package (PDIP) 8-lead, 0.0" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC) 8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP) 8Y 8-lead, 4.90 mm x.00 mm Body, Dual Footprint, Non-leaded, Miniature Array Package (MAP) TS -lead,.90 mm x.60 mm Body, Plastic Thin Shrink Small Outline Package (SOT) 8U- 8-ball, die Ball Grid Away Package (dbg) Options.7 Low-voltage (.7V to.v).8 Low-voltage (.8V to.v) 4 AT4C0A/0/04/08/6
8 AT4C0A/0/04/08/6 AT4C04 Ordering Information () Ordering Code Package Operation Range AT4C04-0PI-.7 AT4C04N-0SI-.7 AT4C04-0TI-.7 AT4C04-0PI-.8 AT4C04N-0SI-.8 AT4C04-0TI-.8 AT4C04-0PU-.7 () AT4C04-0PU-.8 () AT4C04N-0SU-.7 () AT4C04N-0SU-.8 () AT4C04-0TU-.7 () AT4C04-0TU-.8 () AT4C04Y-0YU-.8 () AT4C04-0TSU-.8 () AT4C04U-0UU-.8 () AT4C04-W.7- () AT4C04-W.8- () 8Y TS 8U- Die Sale Die Sale Lead-free/Halogen-free/ Notes:. For.7V devices used in the 4.V to.v range, please refer to performance values in the AC and DC characteristics table.. U designates Green Package & RoHS compliant.. Available in waffle pack and wafer form; order as SL79 for wafer form. Bumped die available upon request. Please contact Serial EEPROM Marketing. Package Type 8-lead, 0.00" Wide, Plastic Dual Inline Package (PDIP) 8-lead, 0.0" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC) 8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP) 8Y 8-lead, 4.90 mm x.00 mm Body, Dual Footprint, Non-leaded, Miniature Array Package (MAP) TS -lead,.90 mm x.60 mm Body, Plastic Thin Shrink Small Outline Package (SOT) 8U- 8-ball, die Ball Grid Away Package (dbg) Options.7 Low-voltage (.7V to.v).8 Low-voltage (.8V to.v)
9 AT4C08 () Ordering Information Ordering Code () Package Operation Range AT4C08-0PI-.7 AT4C08N-0SI-.7 AT4C08-0TI-.7 AT4C08-0PI-.8 AT4C08N-0SI-.8 AT4C08-0TI-.8 Notes:. This device is not recommended for new designs. Please refer to AT4C08A.. For.7V devices used in the 4.V to.v range, please refer to performance values in the AC and DC characteristics table. Package Type 8-lead, 0.00" Wide, Plastic Dual Inline Package (PDIP) 8-lead, 0.0" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC) 8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP) Options.7 Low-voltage (.7V to.v).8 Low-voltage (.8V to.v) 6 AT4C0A/0/04/08/6
10 AT4C0A/0/04/08/6 AT4C6 () Ordering Information Ordering Code () Package Operation Range AT4C6-0PI-.7 AT4C6N-0SI-.7 AT4C6-0TI-.7 AT4C6-0PI-.8 AT4C6N-0SI-.8 AT4C6-0TI-.8 Notes:. This device is not recommended for new designs. Please refer to AT4C6A.. For.7V devices used in the 4.V to.v range, please refer to performance values in the AC and DC characteristics table. Package Type 8-lead, 0.00" Wide, Plastic Dual Inline Package (PDIP) 8-lead, 0.0" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC) 8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP) Options.7 Low-voltage (.7V to.v).8 Low-voltage (.8V to.v) 7
11 Packaging Information PDIP E E N Top View c ea End View D D e A COMMON DIMENSIONS (Unit of Measure = inches) SYMBOL MIN NOM MAX NOTE A b b b c b 4 PLCS b b L D D 0.00 E E Side View e 0.00 BSC ea 0.00 BSC 4 L Notes: R. This drawing is for general information only; refer to JEDEC Drawing MS-00, Variation BA, for additional information.. Dimensions A and L are measured with the package seated in JEDEC seating plane Gauge GS-.. D, D and E dimensions do not include mold Flash or protrusions. Mold Flash or protrusions shall not exceed 0.00 inch. 4. E and ea measured with the leads constrained to be perpendicular to datum.. Pointed or rounded lead tips are preferred to ease insertion. 6. b and b maximum dimensions do not include Dambar protrusions. Dambar protrusions shall not exceed 0.00 (0. mm). Orchard Parkway San Jose, CA 9 TITLE, 8-lead, 0.00" Wide Body, Plastic Dual In-line Package (PDIP) DRAWING NO. 0/09/0 REV. B 8 AT4C0A/0/04/08/6
12 TSSOP Pin indicator this corner E E L N Top View L End View b e D Side View A COMMON DIMENSIONS (Unit of Measure = mm) SYMBOL MIN NOM MAX NOTE D , E 6.40 BSC E , A b e 0.6 BSC L L.00 REF Notes:. This drawing is for general information only. Refer to JEDEC Drawing MO-, Variation AA, for proper dimensions, tolerances, datums, etc.. Dimension D does not include mold Flash, protrusions or gate burrs. Mold Flash, protrusions and gate burrs shall not exceed 0. mm (0.006 in) per side.. Dimension E does not include inter-lead Flash or protrusions. Inter-lead Flash and protrusions shall not exceed 0. mm (0.00 in) per side. 4. Dimension b does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the b dimension at maximum material condition. Dambar cannot be located on the lower radius of the foot. Minimum space between protrusion and adjacent lead is 0.07 mm.. Dimension D and E to be determined at Datum Plane H. /0/0 R Orchard Parkway San Jose, CA 9 TITLE, 8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP) DRAWING NO. REV. B 0 AT4C0A/0/04/08/6
13 TS SOT e 4 C E E C L L Top View End View b A Seating Plane e A NOTES:. This drawing is for general information only. Refer to JEDEC Drawing MO-9, Variation AB, for additional information.. Dimension D does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not exceed 0. mm per end. Dimension E does not include interlead flash or protrusion. Interlead flash or protrusion shall not exceed 0. mm per side.. The package top may be smaller than the package bottom. Dimensions D and E are determined at the outermost extremes of the plastic body exclusive of mold flash, tie bar burrs, gate burrs, and interlead flash, but including any mismatch between the top and bottom of the plastic body. 4. These dimensions apply to the flat section of the lead between 0.08 mm and 0. mm from the lead tip.. Dimension "b" does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the "b" dimension at maximum material condition. The Dambar cannot be located on the lower radius of the foot. Minimum space between protrusion and an adjacent lead shall not be less than 0.07 mm. D Side View COMMON DIMENSIONS (Unit of Measure = mm) SYMBOL MIN NOM MAX NOTE A.0 A c D.90 BSC, E.80 BSC, E.60 BSC, L 0.60 REF e 0.9 BSC e.90 BSC b , R 0 E. Cheyenne Mtn. Blvd. Colorado Springs, CO TITLE TS, -lead,.60 mm Body, Plastic Thin Shrink Small Outline Package (SHRINK SOT) 6//0 DRAWING NO. REV. POTS A AT4C0A/0/04/08/6
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Description The ACE24AC02A1 is 2048 bits of serial Electrical Erasable and Programmable Read Only Memory, commonly known as EEPROM. They are organized as 256 words of 8 bits (1 byte) each. The devices
More information1-Megabit (128K x 8) Low Voltage Paged Parallel EEPROMs AT28LV010
BDTIC www.bdtic.com/atmel Features Single 3.3V ± 10% Supply Fast Read Access Time 200 ns Automatic Page Write Operation Internal Address and Data Latches for 128 Bytes Internal Control Timer Fast Write
More information2-wire Serial EEPROM Smart Card Modules AT24C32SC AT24C64SC
Features Low-voltage and Standard-voltage Operation 5.0 (V CC = 4.5V to 5.5V) 2.7 (V CC = 2.7V to 5.5V) Internally Organized 4096 x 8, 8192 x 8 2-wire Serial Interface Schmitt Trigger, Filtered Inputs
More informationACE24AC128 Two-wire Serial EEPROM
Description The ACE24AC128 series are 131,072 bits of serial Electrical Erasable and Programmable Read Only Memory, commonly known as EEPROM. They are organized as 16,384 words of 8 bits (one byte) each.
More informationACE24AC64 Two-wire Serial EEPROM
Description The ACE24AC64 series are 65,536 bits of serial Electrical Erasable and Programmable Read Only Memory, commonly known as EEPROM. They are organized as 8192 words of 8 bits (one byte) each. The
More informationACE24AC16B Two-wire Serial EEPROM
Description The ACE24AC16B is 16,384 bits of serial Electrical Erasable and Programmable Read Only Memory, commonly known as EEPROM. They are organized as 2,048 words of 8 bits (1 byte) each. The devices
More informationGT24C WIRE. 1024K Bits. Serial EEPROM
GT24C1024 2-WIRE 1024K Bits Serial EEPROM Copyright 2013 Giantec Semiconductor Inc. (Giantec). All rights reserved. Giantec reserves the right to make changes to this specification and its products at
More informationTwo-wire Serial EEPROM
Features Low-voltage and Standard-voltage Operation V CC = 1.7V to 5.5V Internally Organized as 32,768 x 8 Two-wire Serial Interface Schmitt Trigger, Filtered Inputs for Noise Suppression Bidirectional
More informationACE24AC02A3C Two-wire Serial EEPROM
Description The ACE24AC02A3C is 2048 bits of serial Electrical Erasable and Programmable Read Only Memory, commonly known as EEPROM. They are organized as 256 words of 8 bits (1 byte) each. The devices
More informationGT24C64 2-WIRE. 64K Bits. Serial EEPROM
GT24C64 2-WIRE 64K Bits Serial EEPROM Copyright 2013 Giantec Semiconductor Inc. (Giantec). All rights reserved. Giantec reserves the right to make changes to this specification and its products at any
More informationBattery-Voltage. 16K (2K x 8) Parallel EEPROMs AT28BV16. Features. Description. Pin Configurations
Features 2.7 to 3.6V Supply Full Read and Write Operation Low Power Dissipation 8 ma Active Current 50 µa CMOS Standby Current Read Access Time - 250 ns Byte Write - 3 ms Direct Microprocessor Control
More informationTwo-wire Serial EEPROM 4K (512 x 8) 8K (1024 x 8) AT24C04B AT24C08B. Features. Description. Low-voltage and Standard-voltage Operation 1.
Features Low-voltage and Standard-voltage Operation.8 (V CC =.8V to 5.5V) Internally Organized 52 x 8 (4K), or 024 x 8 (8K) Two-wire Serial Interface Schmitt Trigger, Filtered Inputs for Noise Suppression
More informationTwo-wire Serial EEPROM Smart Card Modules 128K (16,384 x 8) 256 (32,768 x 8) AT24C128SC AT24C256SC. Features. Description VCC NC
Features Low-voltage and Standard-voltage Operation, V CC = 2.7V to 5.5V Internally Organized 16,384 x 8 and 32,768 x 8 2-wire Serial Interface Schmitt Trigger, Filtered Inputs for Noise Suppression Bi-directional
More informationTwo-wire Serial EEPROM Smart Card Modules 1K (128 x 8) 2K (256 x 8) 4K (512 x 8) 8K (1024 x 8) 16K (2048 x 8)
Features Low-voltage and Standard-voltage Operation, VCC = 2.7V 5.5V Internally Organized 128 x 8 (1K), 256 x 8 (2K), 512 x 8 (4K), 1024 x 8 (8K), or 2048 x 8 (16K) Two-wire Serial Interface Schmitt Trigger,
More information16-megabit 2.5-volt or 2.7-volt DataFlash AT45DB161D
Features Single 2.5V - 3.6V or 2.7V - 3.6V Supply RapidS Serial Interface: 66 MHz Maximum Clock Frequency SPI Compatible Modes 0 and 3 User Configurable Page Size 512 Bytes per Page 528 Bytes per Page
More information3-wire Serial EEPROMs AT93C46 AT93C56 AT93C57 AT93C66
Features Low-voltage and Standard-voltage Operation 5.0 (V CC = 4.5V to 5.5V) 2.7 (V CC = 2.7V to 5.5V) 2.5 (V CC = 2.5V to 5.5V) 1.8 (V CC = 1.8V to 5.5V) User-selectable Internal Organization 1K: 128
More information8-megabit 2.5-volt or 2.7-volt DataFlash AT45DB081D
Features Single 2.5V or 2.7V to 3.6V Supply RapidS Serial Interface: 66 MHz Maximum Clock Frequency SPI Compatible Modes 0 and 3 User Configurable Page Size 256 Bytes per Page 264 Bytes per Page Page Size
More informationFM24C32A/64A 2-Wire Serial EEPROM
FM24C32A/64A 2-Wire Serial EEPROM Nov. 2009 FM24C32A/64A 2-Wire Serial EEPROM Ver 1.5 1 INFORMATION IN THIS DOCUMENT IS INTENDED AS A REFERENCE TO ASSIST OUR CUSTOMERS IN THE SELECTION OF SHANGHAI FUDAN
More information3-Wire Serial EEPROM AT93C46C
Features Low-Voltage and Standard-Voltage Operation 2.7(V CC =2.7Vto5.5V) 2.5(V CC =2.5Vto5.5V) 3-Wire Serial Interface Schmitt Trigger, Filtered Inputs for Noise Suppression 2MHzClockRate(5V) Self-Timed
More information1-megabit (64K x 16) 5-volt Only Flash Memory AT49F1024A Features Description Pin Configurations
BDTIC www.bdtic.com/atmel Features Single-voltage Operation 5V Read 5V Reprogramming Fast Read Access Time 45 ns Internal Program Control and Timer 8K Word Boot Block with Lockout Fast Erase Cycle Time
More informationBattery-Voltage. 256K (32K x 8) Parallel EEPROMs AT28BV256. Features. Description. Pin Configurations
Features Single 2.7V - 3.6V Supply Fast Read Access Time - 200 ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Internal Control Timer Fast Write Cycle Times Page Write
More informationIntegrated circuit 93C56
Integrated circuit 93C56 Features Low Voltage and Standard Voltage Operation 5.0 (V CC = 4.5V to 5.5V) 2.7 (V CC = 2.7V to 5.5V) 2.5 (V CC = 2.5V to 5.5V) 1.8 (V CC = 1.8V to 5.5V) User Selectable Internal
More informationAT24C01D and AT24C02D
AT24C01D and AT24C02D I 2 C-Compatible (2-wire) Serial EEPROM 1-Kbit (128 x 8) or 2-Kbit (256 x 8) DATASHEET Features Low voltage operation 1.7V (V CC = 1.7V to 3.6V) Internally organized 128 x 8 (1K)
More informationLow Voltage Operation. Internally Organized as 4,096 x 8 (32K) I 2 C-compatible (2-wire) Serial Interface
AT24C32E I 2 C-Compatible (2-wire) Serial EEPROM 32-Kbit (4,096 x 8) DATASHEET Features Low Voltage Operation V CC = 1.7V to 3.6V Internally Organized as 4,096 x 8 (32K) I 2 C-compatible (2-wire) Serial
More informationGT24C32A 2-WIRE. 32K Bits. Serial EEPROM
GT24C32A 2-WIRE 32K Bits Serial EEPROM Copyright 2013 Giantec Semiconductor Inc. (Giantec). All rights reserved. Giantec reserves the right to make changes to this specification and its products at any
More information1-Megabit (128K x 8) Low Voltage Paged Parallel EEPROMs
Features Single 3.3V ± 10% Supply Fast Read Access Time - 200 ns Automatic Page Write Operation Internal Address and Data Latches for 128 Bytes Internal Control Timer Fast Write Cycle Time Page Write Cycle
More informationGT24C256 2-WIRE. 256K Bits. Serial EEPROM
GT24C256 2-WIRE 256K Bits Serial EEPROM Copyright 2013 Giantec Semiconductor Inc. (Giantec). All rights reserved. Giantec reserves the right to make changes to this specification and its products at any
More information1-Megabit (128K x 8) 5-volt Only Flash Memory AT29C010A. Features. Description. Pin Configurations
Features Fast Read Access Time - 70 ns 5-Volt Only Reprogramming Sector Program Operation Single Cycle Reprogram (Erase and Program) 1024 Sectors (128 bytes/sector) Internal Address and Data Latches for
More information4-Megabit (512K x 8) 5-volt Only 256-Byte Sector Flash Memory AT29C040A. Features. Description. Pin Configurations
Features Fast Read Access Time - 120 ns 5-Volt Only Reprogramming Sector Program Operation Single Cycle Reprogram (Erase and Program) 2048 Sectors (256 bytes/sector) Internal Address and Data Latches for
More informationACE24C512C Two-wire serial EEPROM
Description The ACE24C512C is a 512-Kbit I 2 C-compatible Serial EEPROM (Electrically Erasable Programmable Memory) device. It contains a memory array of 64 K 8 bits, which is organized in 128-byte per
More information64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection AT28BV64B
Features Single 2.7V to 3.6V Supply Hardware and Software Data Protection Low Power Dissipation 15mA Active Current 20µA CMOS Standby Current Fast Read Access Time 200ns Automatic Page Write Operation
More information256K (32K x 8) 3-volt Only Flash Memory
Features Single Supply Voltage, Range 3V to 3.6V 3-Volt Only Read and Write Operation Software Protected Programming Low Power Dissipation 15 ma Active Current 40 µa CMOS Standby Current Fast Read Access
More information512K bitstwo-wire Serial EEPROM
General Description The provides 524,288 bits of serial electrically erasable and programmable read-only memory (EEPROM), organized as 65,536 words of 8 bits each. The device is optimized for use in many
More information1-Megabit (128K x 8) 5-volt Only Flash Memory AT29C010A. Features. Description. Pin Configurations
Features Fast Read Access Time - 70 ns 5-Volt Only Reprogramming Sector Program Operation Single Cycle Reprogram (Erase and Program) 1024 Sectors (128 bytes/sector) Internal Address and Data Latches for
More informationI²C-Compatible (2-Wire) Serial EEPROM 8-Kbit (1,024 x 8)
I²C-Compatible (2-Wire) Serial EEPROM 8-Kbit (1,024 x 8) Features Low-Voltage Operation: Vcc = 1.7V to 3.6V Internally Organized as 1,024 x 8 (8K) Industrial Temperature Range -40 C to +85 C I 2 C-Compatible
More informationLow Voltage Operation. Internally Organized as 1,024 x 8 (8K) I 2 C-compatible (2-wire) Serial Interface
AT24C08D I 2 C-Compatible (2-wire) Serial EEPROM 8-Kbit (1,024 x 8) DATASHEET Features Low Voltage Operation V CC = 1.7V to 3.6V Internally Organized as 1,024 x 8 (8K) I 2 C-compatible (2-wire) Serial
More informationAT24C01D and AT24C02D
AT24C01D and AT24C02D I 2 C-Compatible (2-wire) Serial EEPROM 1-Kbit (128 x 8) or 2-Kbit (256 x 8) DATASHEET Features Low Voltage Operation 1.7V (V CC = 1.7V to 3.6V) Internally Organized 128 x 8 (1K)
More informationFM24C1024A. Apr Data Sheet. Data Sheet FM24C1024A 2-wrie Serial EEPROM Ver 1.1 1
FM24C1024A 2-Wire Serial EEPROM Apr. 2013 FM24C1024A 2-wrie Serial EEPROM Ver 1.1 1 INFORMATION IN THIS DOCUMENT IS INTENDED AS A REFERENCE TO ASSIST OUR CUSTOMERS IN THE SELECTION OF SHANGHAI FUDAN MICROELECTRONICS
More informationRM24C64C. 64Kbit 2.7V Minimum Non-volatile Serial Memory I 2 C Bus. Features. Description
64Kbit 2.7V Minimum Non-volatile Serial Memory I 2 C Bus Features Memory array: 64Kbit EEPROM-compatible serial memory Single supply voltage: 2.7V - 3.6V 2-wire I 2 C interface Compatible with I 2 C bus
More informationTwo-wire Serial Electrically Erasable and Programmable Read-only Memory
Features Low-voltage and standard-voltage operation V CC = 1.7V to 5.5V Internally organized as 16,384 x 8 Two-wire serial interface Schmitt trigger, filtered inputs for noise suppression Bidirectional
More information24AA16/24LC16B. 16K I 2 C Serial EEPROM. Device Selection Table. Description: Features: Package Types. Block Diagram. Temp. Ranges.
6K I C Serial EEPROM Device Selection Table Part Number Features: Vcc Range Max. Clock Frequency Temp. Ranges A6.7-. 00 khz () I LC6B.-. 00 khz I, E Note : 00 khz for
More informationFM24C04A/08A 2-Wire Serial EEPROM
FM24C04A/08A 2-Wire Serial EEPROM Apr. 2013 FM24C04A/08A 2-Wire Serial EEPROM Ver 1.5 1 INFORMATION IN THIS DOCUMENT IS INTENDED AS A REFERENCE TO ASSIST OUR CUSTOMERS IN THE SELECTION OF SHANGHAI FUDAN
More informationDIP Top View VCC WE A17 NC A16 A15 A12 A14 A13 A8 A9 A11 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 I/O1 I/O2 GND.
Features Fast Read Access Time - 70 ns 5-volt Only Reprogramming Sector Program Operation Single Cycle Reprogram (Erase and Program) 1024 Sectors (256 bytes/sector) Internal Address and Data Latches for
More informationDIP Top View A18 A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND VCC A17 A14 A13 A8 A9 A11 A10 I/O7 I/O6 I/O5 I/O4 I/O3 VCC A18 A17
Features Single-voltage Operation 5V Read 5V Reprogramming Fast Read Access Time 55 ns Internal Program Control and Timer 16-Kbyte Boot Block with Lockout Fast Erase Cycle Time 10 seconds Byte-by-byte
More informationFM24CL04 4Kb FRAM Serial Memory
4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits Unlimited Read/Writes 45 Year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process
More informationA24C02. AiT Semiconductor Inc. ORDERING INFORMATION
DESCRIPTION provides 2048 bits of serial electrically erasable and programmable read-only memory (EEPROM), organized as 256 words of 8 bits each. The device is optimized for use in many industrial and
More informationA24C08. AiT Semiconductor Inc. ORDERING INFORMATION
DESCRIPTION The provides 8192 bits of serial electrically erasable and programmable read-only memory (EEPROM), organized as 1024 words of 8 bits each. The device is optimized for use in many industrial
More information64K (8K x 8) Low-voltage Parallel EEPROM with Page Write and Software Data Protection AT28LV64B. 3-Volt, 64K E 2 PROM with Data Protection
Features Single 3.3V ± 10% Supply Hardware and Software Data Protection Low-power Dissipation 15mAActiveCurrent 20 µa CMOS Standby Current Fast Read Access Time - 200 ns Automatic Page Write Operation
More information64K (8K x 8) High Speed Parallel EEPROM with Page Write and Software Data Protection AT28HC64BF
Features Fast Read Access Time 70 ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Fast Write Cycle Times Page Write Cycle Time: 2 ms Maximum (Standard) 1 to 64-byte Page
More informationGT24C02. 2-Wire. 2Kb Serial EEPROM (Smart Card application)
ADVANCED GT24C02 2-Wire 2Kb Serial EEPROM (Smart Card application) www.giantec-semi.com a0 1/19 Table of Content 1 FEATURES...3 2 DESCRIPTION...4 3 PIN CONFIGURATION...5 4 PIN DESCRIPTIONS...6 5 BLOCK
More information64K (8K x 8) Parallel EEPROM with Page Write and Software Data Protection AT28C64B. Features. Description. Pin Configurations
Features Fast Read Access Time 150 ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Fast Write Cycle Times Page Write Cycle Time: 10 ms Maximum (Standard) 2 ms Maximum (Option)
More informationFM24C16C-GTR. 16Kb Serial 5V F-RAM Memory. Features. Description. Pin Configuration NC NC NC VSS VDD WP SCL SDA. Ordering Information.
Preliminary FM24C16C 16Kb Serial 5V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM Organized as 2,048 x 8 bits High Endurance (10 12 ) Read/Write Cycles 36 year Data Retention at +75 C NoDelay
More informationSPI Serial EEPROMs 8K (1024 x 8) 16K (2048 x 8) AT25080B AT25160B. Preliminary
Features Serial Peripheral Interface (SPI) Compatible Supports SPI Modes (,) and 3 (,) Datasheet Describes Mode Operation Low-voltage and Standard-voltage Operation.8 (V CC =.8V to.v) MHz Clock Rate (V)
More information64K (8K x 8) High Speed Parallel EEPROM with Page Write and Software Data Protection AT28HC64BF
Features Fast Read Access Time 70 ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Fast Write Cycle Times Page Write Cycle Time: 2 ms Maximum (Standard) 1 to 64-byte Page
More informationSPI Serial EEPROMs 8K (1024 x 8) 16K (2048 x 8) 32K (4096 x 8) 64K (8192 x 8) AT25080 AT25160 AT25320 AT25640
Features Serial Peripheral Interface (SPI) Compatible Supports SPI Modes (,) and 3 (1,1) Low-voltage and Standard-voltage Operation.7 (V CC =.7V to 5.5V) 1.8 (V CC = 1.8V to 5.5V) 3. MHz Clock Rate (5V)
More informationFM24C Kb FRAM Serial Memory Features
Preliminary FM24C512 512Kb FRAM Serial Memory Features 512Kbit Ferroelectric Nonvolatile RAM Organized as 65,536 x 8 bits High Endurance 10 Billion (10 10 ) Read/Writes 45 year Data Retention NoDelay Writes
More information2-Wire Serial EEPROM AT24C02A AT24C04A AT24C08A AT24C02A/04A/ 08A. Features. Description. Pin Configurations. 2K (256 x 8) 4K (512 x 8) 8K (1024 x 8)
Features Write Protect Pin for Hardware Data Protection Utilizes Different Array Protection Compared to the A24C02/04/08 Low Voltage and tandard Voltage Operation 5.0 (V CC = 4.5V to 5.5V) 2.7 (V CC =
More informationHigh- Performance Flash PLD ATF16V8B. Features. Block Diagram. Pin Configurations
Features Industry Standard Architecture Emulates Many 20-Pin PALs Low Cost Easy-to-Use Software Tools High-Speed Electrically Erasable Programmable Logic Devices 7.5 ns Maximum Pin-to-Pin Delay Several
More informationRM25C64C. 64Kbit 2.7V Minimum Non-volatile Serial Memory SPI Bus. Features. Description
64Kbit 2.7V Minimum Non-volatile Serial Memory SPI Bus Features Memory array: 64Kbit EEPROM-compatible serial memory Single supply voltage: 2.7V - 3.6V Serial peripheral interface (SPI) compatible Supports
More information4-Megabit (512K x 8) 5-volt Only CMOS Flash Memory AT49F040 AT49F040T AT49F040/040T AT49F040/040T. Features. Description. Pin Configurations
Features Single Voltage Operation 5V Read 5V Reprogramming Fast Read Access Time - 70 ns Internal Program Control and Timer 16K bytes Boot Block With Lockout Fast Erase Cycle Time - 10 seconds Byte By
More information256K (32K x 8) Paged Parallel EEPROMs AT28C256. Features. Description
Features Fast Read Access Time - 150 ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: 3 ms or 10 ms
More informationFM24C16B-GTR. 16Kb Serial 5V F-RAM Memory. Features. Pin Configuration. Description. Ordering Information NC NC NC VSS VDD WP SCL SDA.
Preliminary FM24C16B 16Kb Serial 5V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM Organized as 2,048 x 8 bits High Endurance (10 12 ) Read/Write Cycles 38 year Data Retention NoDelay Writes
More informationAT49BV004(T) TSOP Top View Type 1 1. AT49BV4096A(T) TSOP Top View Type 1 A16 BYTE GND I/O7 I/O14 I/O6 I/O13 I/O5 I/O12 I/O4 VCC I/O11 I/O3 I/O10 I/O2
Features 2.7V to 3.6V Read/Write Operation Fast Read Access Time - 120 ns Internal Erase/Program Control Sector Architecture One 8K Words (16K bytes) Boot Block with Programming Lockout Two 4K Words (8K
More informationFM24C64C-GTR. 64Kb Serial 5V F-RAM Memory Features. Pin Configuration. Description A0 A1 A2 VSS VDD SCL SDA. Ordering Information.
Preliminary FM24C64C 64Kb Serial 5V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 1 Trillion (10 12 ) Read/Writes 36 Year Data Retention at +75
More information256K (32K x 8) High-speed Parallel EEPROM AT28HC256
Features Fast Read Access Time 70 ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: 3 ms or 10 ms Maximum
More informationI²C-Compatible (2-Wire) Serial EEPROM 16 Kbit (2,048 x 8)
I²C-Compatible (2-Wire) Serial EEPROM 16 Kbit (2,048 x 8) Features Low-Voltage Operation: V CC = 1.7V to 5.5V Internally Organized as 2,048 x 8 (16K) Industrial Temperature Range: -40 C to +85 C I 2 C-Compatible
More informationNot Recommended for New Designs
A PPLICATION NOTE A V A I L A B L E AN20 AN42 48 AN50-53 AN73 AN99 AN115 AN120 AN124 AN133 AN134 AN135 Low Power/2-Wire Serial Bus X9241 Quad Digitally Controlled Potentiometer (XDCP ) FEATURES Four potentiometers
More information4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory AT49BV040 AT49BV040T AT49LV040 AT49LV040T
Features Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) Fast Read Access Time 70 ns Internal Program Control and Timer 16K Bytes Boot Block with Lockout Fast Chip Erase Cycle Time
More information256 (32K x 8) High-speed Parallel EEPROM AT28HC256
Features Fast Read Access Time 70 ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: 3 ms or 10 ms Maximum
More informationA24C64. AiT Semiconductor Inc. ORDERING INFORMATION
DESCRIPTION provides 65536 bits of serial electrically erasable and programmable read-only memory (EEPROM) organized as 8192 words of 8 bits each. The is optimized for use in many industrial and commercial
More information64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection AT28BV64B
Features Single 2.7V to 3.6V Supply Hardware and Software Data Protection Low Power Dissipation 15 ma Active Current 20 µa CMOS Standby Current Fast Read Access Time 200 ns Automatic Page Write Operation
More informationSPI Serial EEPROM AT25010A AT25020A AT25040A. Not Recommended for New Design
Features Serial Peripheral Interface (SPI) Compatible Supports SPI Modes (,) and 3 (1,1) Data Sheet Describes Mode Operation Low-voltage and Standard-voltage Operation 2.7 (V CC = 2.7V to 5.5V) 1.8 (V
More information256 (32K x 8) High-speed Parallel EEPROM AT28HC256N. Features. Description. Pin Configurations
Features Fast Read Access Time 90 ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: 3 ms or 10 ms Maximum
More information