1K-16K UNI/O Serial EEPROM Family Data Sheet
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1 11AA010/11LC010 11AA080/11LC080 11AA00/11LC00 11AA160/11LC160 11AA040/11LC040 1K-16K UNI/O Serial EEPROM Family Data Sheet Features: Single I/O, UNI/O Serial Interface Bus Low-Power CMOS Technology - 1 active current, typical - 1 µa standby current (max.) (I-temp) 18 x 8 through,048 x 8 Bit Organizations Schmitt Trigger Inputs for Noise Suppression Output Slope Control to Eliminate Ground Bounce 100 kbps Max. Bit Rate Equivalent to 100 khz Clock Frequency Self-Timed Write Cycle (including Auto-Erase) Page-Write Buffer for up to 16 Bytes STATUS Register for Added Control: - Write enable latch bit - Write-In-Progress bit Block Write Protection - Protect none, 1/4, 1/ or all of array Built-in Write Protection - Power-on/off data protection circuitry - Write enable latch High Reliability - Endurance: 1,000,000 erase/write cycles - Data retention: > 00 years - ESD protection: > 4,000 -lead SOT- Package 8-lead PDIP, SOIC, MSOP, TDFN Packages Pb-Free and RoHS Compliant Available Temperature Ranges: - Industrial (I): -40 C to +8 C - Automotive (E): -40 C to +1 C Description: The Microchip Technology Inc. 11AAXXX/11LCXXX (11XX * ) devices are a family of 1 Kbit through 16 Kbit Serial Electrically Erasable PROMs. The devices are organized in blocks of x8-bit memory and support the patented** single I/O UNI/O serial bus. By using Manchester encoding techniques, the clock and data are combined into a single, serial bit stream (SCIO), where the clock signal is extracted by the receiver to correctly decode the timing and value of each bit. Low- design permits operation down to 1.8 (for 11AAXXX devices), with standby and active currents of only 1 ua and 1, respectively. The 11XX family is available in standard packages including 8-lead PDIP and SOIC, and advanced packaging including -lead SOT-, 8-lead TDFN, and 8-lead MSOP. Package Types (not to scale) SS SS 1 4 MSOP (MS) TDFN (MN) CC SCIO SS 1 8 CC SCIO SS PDIP/SOIC (P, SN) SOT (TT) CC SCIO CC 1 SCIO Pin Function Table Name Function SCIO Serial Clock, Data Input/Output SS Ground CC Supply oltage * 11XX is used in this document as a generic part number for the 11 series devices. ** Microchip s UNI/O Bus products are covered by the following patent issued in the U.S.A.: 7,76, Microchip Technology Inc. Preliminary DS067E-page 1
2 DEICE SELECTION TABLE Part Number Density (bits) Organization CC Range Page Size (Bytes) Temp. Ranges Packages 11LC010 1K 18 x I,E P, SN, MS, MN, TT 11AA010 1K 18 x I P, SN, MS, MN, TT 11LC00 K 6 x I,E P, SN, MS, MN, TT 11AA00 K 6 x I P, SN, MS, MN, TT 11LC040 4K 1 x I,E P, SN, MS, MN, TT 11AA040 4K 1 x I P, SN, MS, MN, TT 11LC080 8K 1,04 x I,E P, SN, MS, MN, TT 11AA080 8K 1,04 x I P, SN, MS, MN, TT 11LC160 16K,048 x I,E P, SN, MS, MN, TT 11AA160 16K,048 x I P, SN, MS, MN, TT DS067E-page Preliminary 008 Microchip Technology Inc.
3 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings ( ) CC...6. SCIO w.r.t. SS to CC+1.0 Storage temperature C to 10 C Ambient temperature under bias C to 1 C ESD protection on all pins... 4 k NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended period of time may affect device reliability. TABLE 1-1: DC CHARACTERISTICS Electrical Characteristics: DC CHARACTERISTICS Industrial (I): CC =. to. TA = -40 C to +8 C CC = 1.8 to. TA = -0 C to +8 C Automotive (E): CC =. to. TA = -40 C to +1 C Param. No. Sym. Characteristic Min. Max. Units Test Conditions D1 IH High-level input 0.7*CC CC+1 D IL Low-level input D HYS Hysteresis of Schmitt Trigger inputs (SCIO) D4 OH High-level output D OL Low-level output D6 IO Output current limit (Note ) D7 ILI Input leakage current (SCIO) D8 CINT Internal Capacitance (all inputs and outputs) D9 ICC Read Read Operating Current D10 ICC Write Write Operating Current *CC 0.*CC CC. CC <. 0.0*cc CC. (Note 1) CC -0. CC ±4 ± IOH = -00 μa, CC =. IOH = -00 μa, cc =. IOI = 00 μa, CC =. IOI = 00 μa, cc =. CC =. (Note 1) cc =. (Note 1) ±1 μa IN = SS or CC 7 pf TA = C, FCLK = 1 MHz, CC =.0 (Note 1) D11 Iccs Standby Current 1 μa CC=.; FBUS=100 khz, CB=100 pf CC=.; FBUS=100 khz, CB=100 pf CC =. CC =. CC =. TA = 1 C 1 μa CC =. TA = 8 C D1 ICCI Idle Mode Current 0 μa CC =. Note 1: This parameter is periodically sampled and not 100% tested. : The SCIO output driver impedance will vary to ensure IO is not exceeded. 008 Microchip Technology Inc. Preliminary DS067E-page
4 TABLE 1-: AC CHARACTERISTICS AC CHARACTERISTICS Param. No. TABLE 1-: AC TEST CONDITIONS AC Waveform: LO = 0. HI = CC - 0. CL = 100 pf Timing Measurement Reference Level Input Output Electrical Characteristics: Industrial (I): CC =. to. TA = -40 C to +8 C CC = 1.8 to. TA = -0 C to +8 C Automotive (E): CC =. to. TA = -40 C to +1 C Sym. Characteristic Min. Max. Units Test Conditions 1 FBUS Serial bus frequency khz TE Bit period µs TIJIT Input edge jitter tolerance ±0.08 UI (Note ) 4 FDRIFT Serial bus frequency drift ±0.7 % per byte rate tolerance FDE Serial bus frequency drift ± % per limit command 6 TOJIT Output edge jitter ±0. UI (Note ) 7 TR SCIO input rise time 100 ns (Note 1) 8 TF SCIO input fall time 100 ns (Note 1) 9 TSTBY Standby pulse time 600 µs 10 TSS Start header setup time 10 µs 11 THDR Start header low pulse µs time 1 TSP Input filter spike suppression (SCIO) 0 ns (Note 1) 1 TWC Write cycle time (byte or page) 10 ms ms Write, WRSR commands ERAL, SETAL commands 14 Endurance (per page) 1M cycles C, CC =. (Note ) Note 1: This parameter is periodically sampled and not 100% tested. : This parameter is not tested but ensured by characterization. For endurance estimates in a specific application, please consult the Total Endurance Model which can be obtained on Microchip s web site: : A Unit Interval (UI) is equal to 1-bit period (TE) at the current bus frequency. 0. CC 0. CC DS067E-page 4 Preliminary 008 Microchip Technology Inc.
5 N NOTE 1 E1 1 D E A A A1 L c b1 b e eb DS067E-page 4 Preliminary 008 Microchip Technology Inc.
6 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. X X /XXX Device Tape & Reel Temperature Package Range Device: 11AA010 = 1 Kbit, 1.8 UNI/O Serial EEPROM 11LC010 = 1 Kbit,. UNI/O Serial EEPROM 11AA00 = Kbit, 1.8 UNI/O Serial EEPROM 11LC00 = Kbit,. UNI/O Serial EEPROM 11AA040 = 4 Kbit, 1.8 UNI/O Serial EEPROM 11LC040 = 4 Kbit,. UNI/O Serial EEPROM 11AA080 = 8 Kbit, 1.8 UNI/O Serial EEPROM 11LC080 = 8 Kbit,. UNI/O Serial EEPROM 11AA160 = 16 Kbit, 1.8 UNI/O Serial EEPROM 11LC160 = 16 Kbit,. UNI/O Serial EEPROM Examples: a) 11AA010-I/P = 1 Kbit, 1.8 Serial EEPROM, Industrial temp., PDIP package b) 11LC160T-E/TT = 16 Kbit,. Serial EEPROM, Extended temp., Tape & Reel, SOT- package c) 11AA080-I/MS = 8 Kbit, 1.8 Serial EEPROM, Industrial temp., MSOP package d) 11LC00T-I/SN = Kbit,. Serial EEPROM, Industrial temp., Tape & Reel, SOIC package e) 11AA040T-I/MNY = 4 Kbit, 1.8 Serial EEPROM, Industrial temp., Tape and Reel, x mm TDFN package, Nickel Palladium Gold finish Tape & Reel: T = Tape and Reel Blank = Tube Temperature Range: I = -40 C to +8 C (Industrial) E = -40 C to +1 C (Extended) Package: P = 8-lead Plastic DIP (00 mil body) SN = 8-lead Plastic SOIC (.90 mm body) MS = 8-lead Plastic Micro Small Outline (MSOP) MNY (1) = 8-lead x mm TDFN TT = -lead SOT (Tape and Reel only) Note 1: Y indicates a Nickel Palladium Gold (NiPdAu) finish. 008 Microchip Technology Inc. Preliminary DS067E-page
24AA64/24LC64/24FC64. 64K I 2 C Serial EEPROM. Device Selection Table. Description: Features: Package Types. Block Diagram. Max.
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24AA01/24LC01B. 1K I 2 C Serial EEPROM. Description: Device Selection Table. Features: Package Types. Block Diagram. Part Number.
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25AA160A/B, 25LC160A/B
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93AA56A/B/C, 93LC56A/B/C, 93C56A/B/C
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I 2 C Serial EEPROM Family Data Sheet
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25AA040/25LC040/25C040
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Features Fast Read Access Time - 70 ns 5-Volt Only Reprogramming Sector Program Operation Single Cycle Reprogram (Erase and Program) 1024 Sectors (128 bytes/sector) Internal Address and Data Latches for
GT24C64 2-WIRE. 64K Bits. Serial EEPROM
GT24C64 2-WIRE 64K Bits Serial EEPROM Copyright 2013 Giantec Semiconductor Inc. (Giantec). All rights reserved. Giantec reserves the right to make changes to this specification and its products at any
A24C08. AiT Semiconductor Inc. ORDERING INFORMATION
DESCRIPTION The provides 8192 bits of serial electrically erasable and programmable read-only memory (EEPROM), organized as 1024 words of 8 bits each. The device is optimized for use in many industrial
S-2900A. Rev CMOS 512-bit SERIAL E 2 PROM
Rev.1.11 CMOS 512-bit SERIAL E 2 PROM S-29A The S-29A is a wide operating voltage range, low power consumption 512-bit E 2 PROM. The organization is 64-word 8-bit, and can be read or written serially.
XL93LC46/46A. 1,024-Bit Serial Electrically Erasable PROM with 2V Read Capability. EXEL Microelectronics, Inc. PIN CONFIGURATIONS
EXEL Microelectronics, Inc. 1,024-Bit Serial Electrically Erasable PROM with 2V Read Capability FEATURES 2.7 to 5.5V Operation (XL93LC46) 4.5 to 5.5V Operation (XL93LC46A) Extended Temperature Range: -40
FM24C32A/64A 2-Wire Serial EEPROM
FM24C32A/64A 2-Wire Serial EEPROM Nov. 2009 FM24C32A/64A 2-Wire Serial EEPROM Ver 1.5 1 INFORMATION IN THIS DOCUMENT IS INTENDED AS A REFERENCE TO ASSIST OUR CUSTOMERS IN THE SELECTION OF SHANGHAI FUDAN
PI4IOE5V bit I 2 C-bus and SMBus low power I/O port with interrupt and reset
Features Operation power supply voltage from 2.3V to 5.5V 2-bit I 2 C-bus GPIO with interrupt and reset 5V tolerant I/Os Active Low interrupt output Active Low reset input Polarity inversion register Low
GT24C256 2-WIRE. 256K Bits. Serial EEPROM
GT24C256 2-WIRE 256K Bits Serial EEPROM Copyright 2013 Giantec Semiconductor Inc. (Giantec). All rights reserved. Giantec reserves the right to make changes to this specification and its products at any
A24C64. AiT Semiconductor Inc. ORDERING INFORMATION
DESCRIPTION provides 65536 bits of serial electrically erasable and programmable read-only memory (EEPROM) organized as 8192 words of 8 bits each. The is optimized for use in many industrial and commercial
128Kx8 CMOS MONOLITHIC EEPROM SMD
128Kx8 CMOS MONOLITHIC EEPROM SMD 5962-96796 WME128K8-XXX FEATURES Read Access Times of 125, 140, 150, 200, 250, 300ns JEDEC Approved Packages 32 pin, Hermetic Ceramic, 0.600" DIP (Package 300) 32 lead,
AT29C K (32K x 8) 5-volt Only CMOS Flash Memory. Features. Description. Pin Configurations
Features Fast Read Access Time - 70 ns 5-Volt-Only Reprogramming Page Program Operation Single Cycle Reprogram (Erase and Program) Internal Address and Data Latches for 64-Bytes Internal Program Control
SST 29EE V-only 1 Megabit Page Mode EEPROM
Data Sheet SST 29EE010 July 1996 5.1 Features: Single 5.0-Volt Read and Write Operations CMOS SuperFlash EEPROM Technology Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention Low
FM24C Kb FRAM Serial Memory Features
256Kb FRAM Serial Memory Features 256Kbit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 10 Billion (10 10 ) Read/Writes 45 year Data Retention NoDelay Writes Advanced High-Reliability
GT24C02. 2-Wire. 2Kb Serial EEPROM (Smart Card application)
ADVANCED GT24C02 2-Wire 2Kb Serial EEPROM (Smart Card application) www.giantec-semi.com a0 1/19 Table of Content 1 FEATURES...3 2 DESCRIPTION...4 3 PIN CONFIGURATION...5 4 PIN DESCRIPTIONS...6 5 BLOCK
GT24C WIRE. 1024K Bits. Serial EEPROM
GT24C1024 2-WIRE 1024K Bits Serial EEPROM Copyright 2013 Giantec Semiconductor Inc. (Giantec). All rights reserved. Giantec reserves the right to make changes to this specification and its products at
FM24CL64 64Kb Serial 3V F-RAM Memory Features
64Kb Serial 3V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits Unlimited Read/Write Cycles 45 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric
Pm39LV512 / Pm39LV010 / Pm39LV020 / Pm39LV040
512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory FEATURES Single Power Supply Operation - Low voltage range: 2.7 V - 3.6 V Memory Organization - Pm39LV512: 64K x 8 (512 Kbit) - Pm39LV010:
Am27C Megabit (128 K x 16-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION BLOCK DIAGRAM V CC V SS V PP
FINAL Am27C2048 2 Megabit (128 K x 16-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS Fast access time Speed options as fast as 55 ns Low power consumption 100 µa maximum CMOS standby current JEDEC-approved
Drawing code Package Tape Reel 8-Pin DIP DP008-F 8-Pin SOP(JEDEC) FJ008-A FJ008-D FJ008-D 8-Pin TSSOP FT008-A FT008-E FT008-E
Rev. 3.2_ CMOS SERIAL E 2 PROM Features The is a high speed, low current consumption, 8 K-bit serial E 2 PROM with a wide operating voltage range. It is organized as 512-word 16-bit respectively. Each
ICE27C Megabit(128KX8) OTP EPROM
1- Megabit(128KX8) OTP EPROM Description The is a low-power, high-performance 1M(1,048,576) bit one-time programmable read only memory (OTP EPROM) organized as 128K by 8 bits. It is single 5V power supply
FM93C46A/56A/66A Three-wire Serial EEPROM
FM93C46A/56A/66A Three-wire Serial EEPROM May. 203 FM93C46A/56A/66A Three-wire Serial EEPROM Ver..0 INFORMATION IN THIS DOCUMENT IS INTENDED AS A REFERENCE TO ASSIST OUR CUSTOMERS IN THE SELECTION OF SHANGHAI
FM24C1024A. Apr Data Sheet. Data Sheet FM24C1024A 2-wrie Serial EEPROM Ver 1.1 1
FM24C1024A 2-Wire Serial EEPROM Apr. 2013 FM24C1024A 2-wrie Serial EEPROM Ver 1.1 1 INFORMATION IN THIS DOCUMENT IS INTENDED AS A REFERENCE TO ASSIST OUR CUSTOMERS IN THE SELECTION OF SHANGHAI FUDAN MICROELECTRONICS
1-megabit (64K x 16) 5-volt Only Flash Memory AT49F1024A Features Description Pin Configurations
BDTIC www.bdtic.com/atmel Features Single-voltage Operation 5V Read 5V Reprogramming Fast Read Access Time 45 ns Internal Program Control and Timer 8K Word Boot Block with Lockout Fast Erase Cycle Time
DatasheetArchive.com. Request For Quotation
DatasheetArchive.com Request For Quotation Order the parts you need from our real-time inventory database. Simply complete a request for quotation form with your part information and a sales representative
M24M02-A125. Automotive 2-Mbit serial I²C bus EEPROM with 1 MHz clock. Features
Automotive 2-Mbit serial I²C bus EEPROM with 1 MHz clock Features Datasheet - production data SO8 (MN) 150 mil width Compatible with all I 2 C bus modes 1 MHz 400 khz 100 khz Memory array 2 Mbit (256 Kbyte)
16-megabit 2.5-volt or 2.7-volt DataFlash AT45DB161D
Features Single 2.5V - 3.6V or 2.7V - 3.6V Supply RapidS Serial Interface: 66 MHz Maximum Clock Frequency SPI Compatible Modes 0 and 3 User Configurable Page Size 512 Bytes per Page 528 Bytes per Page
PCA bit multiplexed/1-bit latched 5-bit I 2 C EEPROM DIP switch
INTEGRATED CIRCUITS Supersedes data of 2001 Jan 12 2003 Jun 27 Philips Semiconductors FEATURES 4-bit 2-to-1 multiplexer, 1-bit latch DIP switch 5-bit internal non-volatile register Override input forces
A24C02. AiT Semiconductor Inc. ORDERING INFORMATION
DESCRIPTION provides 2048 bits of serial electrically erasable and programmable read-only memory (EEPROM), organized as 256 words of 8 bits each. The device is optimized for use in many industrial and
8 Mbit SPI Serial Flash SST25VF080
FEATURES: 8 Mbit SPI Serial Flash 8 Mb Serial Peripheral Interface (SPI) flash memory Single Voltage Read and Write Operations 2.7-3.6V for Serial Interface Architecture SPI Compatible: Mode 0 and Mode
SST 29EE V-only 512 Kilobit Page Mode EEPROM
Data Sheet SST 29EE512 June 1997 2.1 Features: Single 5.0-Volt Read and Write Operations CMOS SuperFlash EEPROM Technology Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention Low
Am27C128. Advanced Micro Devices. 128 Kilobit (16,384 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION BLOCK DIAGRAM FINAL
FINAL 128 Kilobit (16,384 x 8-Bit) CMOS EPROM Advanced Micro Devices DISTINCTIVE CHARACTERISTICS Fast access time 45 ns Low power consumption 20 µa typical CMOS standby current JEDEC-approved pinout Single
Features INSTRUCTION DECODER CONTROL LOGIC AND CLOCK GENERATORS COMPARATOR AND WRITE ENABLE EEPROM ARRAY READ/WRITE AMPS DATA IN/OUT REGISTER 16 BITS
July 2000 FM9366 (MICROWIRE Bus Interface) 4096- Serial EEPROM General Description FM9366 is a 4096-bit CMOS non-volatile EEPROM organized as 256 x 16-bit array. This device features MICROWIRE interface
PI4IOE5V bit I 2 C-bus and SMBus I/O port with reset. Description. Features. Pin Configuration
Features Operation power supply voltage from 2.3V to 5.5V 8-bit I 2 C-bus GPIO with interrupt and reset 5V tolerant I/Os Polarity inversion register Active LOW Reset Pin Low current consumption 0Hz to
11AA02E48. 2K UNI/O Serial EEPROM with EUI-48 Node Identity DEVICE SELECTION TABLE. Features: Description: Package Types (not to scale)
2K UNI/O Serial EEPROM with EUI-48 Node Identity DEVICE SELECTION TABLE Part Number Density (bits) Organization VCC Range Page Size (Bytes) Temp. Ranges Packages 11AA02E48 2K 256 x 8 1.8-5.5V 16 I SN,
RM25C64C. 64Kbit 2.7V Minimum Non-volatile Serial Memory SPI Bus. Features. Description
64Kbit 2.7V Minimum Non-volatile Serial Memory SPI Bus Features Memory array: 64Kbit EEPROM-compatible serial memory Single supply voltage: 2.7V - 3.6V Serial peripheral interface (SPI) compatible Supports