CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout
|
|
- Coleen Carson
- 5 years ago
- Views:
Transcription
1 CMOS Static RAM 1 Meg (K x -Bit) Revolutionary Pinout IDT714 Features K x advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/gnd) for reduced noise Equal access and cycle times Commercial: //2 Industrial: /2 One Chip Select plus one Output Enable pin Bidirectional inputs and outputs directly TTL-compatible Low power coumption via chip deselect Available in a 32-pin 4 mil Plastic SOJ Description The IDT714 is a 1,4,576-bit high-speed static RAM organized as K x It is fabricated using high-performance, high-reliability CMOS technology This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high-speed memory needs The JEDEC centerpower/gnd pinout reduces noise generation and improves system performance The IDT714 has an output enable pin which operates as fast as 6, with address access times as fast as available All bidirectional inputs and outputs of the IDT714 are TTL-compatible and operation is from a single 5V supply Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation The IDT714 is packaged in a 32-pin 4 mil Plastic SOJ Functional Block Diagram A DECODER 1,4,576-BIT MEMORY ARRAY A16 I/O -I/O7 I/O CONTROL, WE OE CONTROL LOGIC 3514 drw Integrated Device Technology, Inc 1 APRIL 213 DSC-3514/11
2 IDT714 CMOS Static RAM 1 Meg (K x -bit) Revolutionary Pinout Commercial and Industrial Temperature Ranges Pin Configuration A A1 A2 A3 I/O I/O1 VCC GND I/O2 I/O3 WE A4 A5 A SO A7 17 SOJ Top View A16 A A14 A13 OE I/O7 I/O6 GND VCC I/O5 I/O4 A A11 A1 A9 A 3514 drw 2, Absolute Maximum Ratings (1) Symbol Rating Value Unit VTERM (2) Terminal Voltage with Respect to GND 1 Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device This is a stress rating only and functional operation of the device at these or any other conditio above those indicated in the operational sectio of this specification is not implied Exposure to absolute maximum rating conditio for extended periods may affect reliabilty 2 VTERM must not exceed Vcc + 5V Capacitance (TA = +25 C, f = 1MHz) -5 to +7 (2) V TA Operating Temperature to +7 o C TBIAS TSTG Temperature Under Bias Storage Temperature -55 to +5 o C -55 to +5 o C PT Power Dissipation 125 W IOUT DC Output Current 5 ma 3514 tbl 2 Truth Table (1,2) OE WE I/O Function L L H DATAOUT Read Data L X L DATAIN Write Data L H H High-Z Output Disabled H X X High-Z Deselected - Standby (ISB) VHC (3) X X High-Z Deselected - Standby (ISB1) 1 H = VIH, L = VIL, x = Don't care 2 VLC = 2V, VHC = VCC -2V 3 Other inputs VHC or VLC 3514 tbl 1 Symbol Parameter (1) Conditio Max Unit CIN Input Capacitance VIN = 3dV pf CI/O I/O Capacitance VOUT = 3dV pf 3514 tbl 3 NOTE: 1 This parameter is guaranteed by device characterization, but is not production tested Recommended Operating Temperature and Supply Voltage Grade Temperature GND VCC Commercial C to +7 C V 5V ± 1% Industrial 4 C to +5 C V 5V ± 1% 3514 tbl 4 Recommended DC Operating Conditio Symbol Parameter Min Typ Max Unit VCC Supply Voltage V GND Ground V VIH Input High Voltage 22 VCC +5 V VIL Input Low Voltage -5 (1) V 3514 tbl
3 IDT 714 CMOS Static RAM 1 Meg (K x -bit) Revolutionary Pinout Commercial and Industrial Temperature Ranges DC Electrical Characteristics (VCC = 5V ± 1%, Commercial and Industrial Temperature Ranges) Symbol Parameter Test Conditio Min Max Unit ILI Input Leakage Current VCC = Max, VIN = GND to VCC 5 µa ILO Output Leakage Current VCC = Max, = VIH, VOUT = GND to VCC 5 µa VOL Output Low Voltage IOL = ma, VCC = Min 4 V VOH Output High Voltage IOH = 4mA, VCC = Min 24 V 3514 tbl 6 DC Electrical Characteristics (1) (VCC = 5V ± 1%, VLC = 2V, VHC = VCC 2V) 714S 714S 714S2 Symbol Parameter Com'l Com'l Ind Com'l Ind Unit ICC ISB Dynamic Operating Current ma < VIL, Outputs Open, VCC = Max, f = fmax (2) Standby Power Supply Current (TTL Level) ma > VIH, Outputs Open, VCC = Max, f = fmax (2) ISB1 Full Standby Power Supply Current (CMOS Level) > VHC, Outputs Open, VCC = Max, f = (2) VIN < VLC or VIN > VHC ma 1 All values are maximum guaranteed values 2 fmax = 1/tRC (all address inputs are cycling at fmax); f = mea no address input lines are changing 3514 tbl 7 AC Test Conditio Input Pulse Levels Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels AC Test Load GND to 3V 3 15V 15V See Figure 1 and tbl AC Test Loads 5V 5V 4Ω 4Ω DATA OUT DATA OUT 3pF 255Ω 3514 drw 3 5pF* 255Ω 3514 drw 4 Figure 1 AC Test Load *Including jig and scope capacitance Figure 2 AC Test Load (for tclz, tolz, tchz, tohz, tow, and twhz) 642 3
4 IDT714 CMOS Static RAM 1 Meg (K x -bit) Revolutionary Pinout Commercial and Industrial Temperature Ranges AC Electrical Characteristics (VCC = 5V ± 1%, Commercial and Industrial Temperature Ranges) 714S (2) 714S 714S2 Symbol Parameter Min Max Min Max Min Max Unit READ CYCLE trc Read Cycle Time 2 taa Address Access Time 2 ta Chip Select Access Time 2 tclz (1) Chip Select to Output in Low-Z tchz (1) Chip Deselect to Output in High-Z 6 7 toe Output Enable to Output Valid 6 7 tolz (1) Output Enable to Output in Low-Z tohz (1) Output Disable to Output in High-Z toh Output Hold from Address Change tpu (1) Chip Select to Power-Up Time tpd (1) Chip Deselect to Power-Down Time 2 WRITE CYCLE twc Write Cycle Time 2 taw Address Valid to End of Write tcw Chip Select to End of Write tas Address Set-up Time twp Write Pulse Width twr Write Recovery Time tdw Data Valid to End-of-Write 6 9 tdh Data Hold Time tow (1) Output active from End-of-Write twhz (1) Write Enable to Output in High-Z 5 5 NOTE: 1 This parameter guaranteed with the AC load (Figure 2) by device characterization, but is not production tested 2 There is no industrial temperature offering for the speed grade 3514 tbl
5 IDT 714 CMOS Static RAM 1 Meg (K x -bit) Revolutionary Pinout Commercial and Industrial Temperature Ranges Timing Waveform of Read Cycle No 1 (1) taa trc OE toe tolz DATAOUT (3) ta tclz HIGH IMPEDANCE tchz tohz DATAOUT VALID VCC SUPPLY CURRENT ICC ISB tpu tpd 3514 drw 5 Timing Waveform of Read Cycle No 2 (1,2,4) trc taa DATAOUT toh PREVIOUS DATAOUT VALID toh DATAOUT VALID 3514 drw 6 1 WE is HIGH for Read Cycle 2 Device is continuously selected, is LOW 3 Address must be valid prior to or coincident with the later of traition LOW; otherwise taa is the limiting parameter 4 OE is LOW 5 Traition is measured ±2mV from steady state 642 5
6 IDT714 CMOS Static RAM 1 Meg (K x -bit) Revolutionary Pinout Commercial and Industrial Temperature Ranges Timing Waveform of Write Cycle No 1 (WE Controlled Timing) (1,2,4) twc taw WE tas twhz (2) twp twr tow tchz DATAOUT (3) HIGH IMPEDANCE tdw tdh (3) DATAIN DATAIN VALID 3514 drw 7 Timing Waveform of Write Cycle No 2 ( Controlled Timing) (1,4) twc taw WE tas tcw twr tdw tdh DATAIN DATAIN VALID 3514 drw 1 A write occurs during the overlap of a LOW and a LOW WE 2 OE is continuously HIGH During a WE controlled write cycle with OE LOW, twp must be greater than or equal to twhz + tdw to allow the I/O drivers to turn off and data to be placed on the bus for the required tdw If OE is HIGH during a WE controlled write cycle, this requirement does not apply and the minimum write pulse is the specified twp 3 During this period, I/O pi are in the output state, and input signals must not be applied 4 If the LOW traition occurs simultaneously with or after the WE LOW traition, the outputs remain in a high impedance state must be active during the tcw write period 5 Traition is measured ±2mV from steady state 642 6
7 IDT 714 CMOS Static RAM 1 Meg (K x -bit) Revolutionary Pinout Commercial and Industrial Temperature Ranges Ordering Information 714 Device Type S Power XX Speed X Package X X Process/ Temperature Range X Blank Tube or Tray Tape and Reel Blank I Commercial (C to +7C) Industrial ( 4C to +5C) G Green Y 4-mil SOJ (SO32-3) * 2 Speed in nanoseconds 3514 drw 9 * No industrial temp on speed 642 7
8 IDT714 CMOS Static RAM 1 Meg (K x -bit) Revolutionary Pinout Commercial and Industrial Temperature Ranges Datasheet Document History /5/99: Updated to new format Pg 3 Removed military entries on DC table Pg 4 Removed Note 1 and renumbered footnotes Pg 6 Revised footnotes on Write Cycle No 1 diagram /13/99: Pg Added Datasheet Document History 9/3/99: Pg 1, 3, 4, 7 Added,, and 2 industrial temperature speed grade offerings 2/1/: Pg 3 Revise ISB for Industrial Temperature offerings to meet commerical specificatio 3/14/: Pg 3 Revised ISB to accomidate speed functionality 4/1/: Pg4 Tightened taw, tcw, twp and tdw within the AC Electrical Characteristics /9/: Not recommended for new desig 2/1/1: Removed "Not recommended for new desig" 1/23/: Pg7 Removed "IDT" from the orderable part number 4/2/13: Pg1 Removed speed from the Industrial temp offering Removed IDT in reference to fabrication Pg3 Removed the industrial speed grade information from the DC Electrical Chars table 7 Pg4 Added footnote 2 to AC Electrical Chars table 9 to indicate that there is no industrial speed Pg7 Added Tape & Reel and Green designators to the ordering information Added a footnote to the ordering information to indicate that there is no industrial speed offering CORPORATE HEADQUARTERS for SALES: 624 Silver Creek Valley Road or San Jose, CA fax: wwwidtcom for Tech Support: sramhelp@idtcom The IDT logo is a registered trademark of Integrated Device Technology, Inc 642
IDT71V124SA/HSA. 3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout
33V CMOS Static RAM 1 Meg (K x -Bit) Center Power & Ground Pinout IDT71VSA/HSA Features K x advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/gnd) for reduced noise Equal access
More informationIDT71016S/NS. CMOS Static RAM 1 Meg (64K x 16-Bit)
CMOS Static RAM 1 Meg (4K x 1-Bit) IDT711S/NS Features 4K x 1 advanced high-speed CMOS Static RAM Equal access and cycle times Commercial and Industrial: //2 One Chip Select plus one Output Enable pin
More information3.3V CMOS Static RAM for Automotive Applications 4 Meg (256K x 16-Bit)
.V CMOS Static RAM for Automotive Applicatio Meg (25K x -Bit) IDTVYS IDTVYL Features 25K x advanced high-speed CMOS Static RAM JEDEC Center Power / GND pinout for reduced noise. Equal access and cycle
More informationIDT7134SA/LA. HIGH-SPEED 4K x 8 DUAL-PORT STATIC SRAM
Features High-speed access : 5/45//7 (max.) Industrial: / (max.) Commercial: 2//5/45//7 (max.) Low-power operation IDT714 Active: 7mW (typ.) Standby: 5mW (typ.) IDT714 Active: 7mW (typ.) Standby: 1mW (typ.)
More informationHIGH-SPEED 4K x 8 FourPort TM STATIC RAM
Features High-speed access Commercial: // (max.) Industrial: (max.) ow-power operation IDT754 Active: 75mW (typ.) tandby: 7.5mW (typ.) IDT754 Active: 75mW (typ.) tandby: mw (typ.) True FourPort memory
More informationLP621024E-I Series 128K X 8 BIT CMOS SRAM. Document Title 128K X 8 BIT CMOS SRAM. Revision History. AMIC Technology, Corp.
128K X 8 BIT CMOS SRAM Document Title 128K X 8 BIT CMOS SRAM Revision History Rev. No. History Issue Date Remark 0.0 Initial issue January 14, 2008 Preliminary 1.0 Final version release September 21, 2010
More informationAS6C K X 8 BIT LOW POWER CMOS SRAM
REVISION HISTORY Revision Description Issue Date Rev. 1.0 Rev. 1.1 Initial Issue Add package 48-ball 8mm 10mm TFBGA Revised ORDERING INFORMATION in page 11 Jan.09.2012 July.12.2013 0 FEATURES Fast access
More information8K X 8 BIT LOW POWER CMOS SRAM
February 2007 FEATURES Access time :55ns Low power consumption: Operation current : 15mA (TYP.), VCC = 3.0V Standby current : 1µ A (TYP.), VCC = 3.0V Wide range power supply : 2.7 ~ 5.5V Fully Compatible
More informationAS6C6264 8K X 8 BIT LOW POWER CMOS SRAM REVISION HISTORY. Feb
REVISION HISTORY Revision Description Issue Date 1.0 Initial issue Feb 2007 2.0 Add-in industrial temperature option for 28-pin 600 July 2017 mil PDIP. Standby current(isb1) reduced to be 20uA for I-grade
More informationCMOS SyncFIFO 64 x 8, 256 x 8, 512 x 8, 1,024 x 8, 2,048 x 8 and 4,096 x 8 LEAD FINISH (SnPb) ARE IN EOL PROCESS - LAST TIME BUY EXPIRES JUNE 15, 2018
CMOS SyncFIFO 64 x 8, 256 x 8, 512 x 8, 1,024 x 8, 2,048 x 8 and 4,096 x 8 LEAD FINISH (SnPb) ARE IN EOL PROCESS - LAST TIME BUY EXPIRES JUNE 15, 2018 IDT72420 IDT72200 IDT72210 IDT72220 IDT72230 IDT72240
More informationHIGH SPEED 128K (8K X 16 BIT) IDT70825S/L SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM )
HIGH SPEED 18K (8K X 16 BIT) SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Features High-speed access Commercial: ///4 (max.) Low-power operation IDT78S Active: 77mW (typ.) Standby: mw (typ.) IDT78L
More informationD0 - D8 INPUT REGISTER. RAM ARRAY 64 x 9, 256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9, 8,192 x 9 OUTPUT REGISTER RESET LOGIC RCLK REN1
CMOS SyncFIFO 64 x 9, 256 x 9, 512 x 9, 1,24 x 9, 2,48 x 9, 4,96 x 9 and 8,192 x 9 LEAD FINISH (SnPb) ARE IN EOL PROCESS - LAST TIME BUY EXPIRES JUNE 15, 218 FEATURES: 64 x 9-bit organization (IDT72421)
More informationIDT7132SA/LA IDT7142SA/LA
HIGH SPEED 2K x 8 DUAL PORT STATIC RAM IDT7132/ IDT7142/ Features High-speed access Commercial: //35/55/1 (max.) Industrial: (max.) : /35/55/1 (max.) Low-power operation IDT7132/42 Active: 3mW (typ.) Standby:
More informationVERY LOW POWER 1.8V 16K/8K/4K x 16 DUAL-PORT STATIC RAM
VERY LOW POWER 1.8V 16K/8K/4K x 16 DUAL-PORT STATIC RAM IDT70P264/254/244L DATASHEET Features True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access
More informationHIGH SPEED 4K X 8 DUAL-PORT STATIC RAM WITH SEMAPHORE
HIGH SPEED 4K X 8 DUAL-PORT STATIC RAM WITH SEMAPHORE IDT7142/ Features High-speed access Commercial: 2//5/45//7 (max.) Industrial: (max.) Low-power operation IDT7142 Active: 7mW (typ.) Standby: 5mW (typ.)
More informationRev. No. History Issue Date Remark
128K X 8 BIT LOW VOLTAGE CMOS SRAM ocument Title 128K X 8 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. History Issue ate Remark 0.0 Initial issue February 19, 2002 Preliminary 0.1 Add 32L Pb-Free
More informationCMOS SyncFIFO 64 X 9, 256 x 9, 512 x 9, 1,024 X 9, 2,048 X 9, 4,096 x 9 and 8,192 x 9
Integrated Device Technology, Inc. CMOS SyncFIFO 64 X 9, 256 x 9, 512 x 9, 1,24 X 9, 2,48 X 9, 4,96 x 9 and 8,192 x 9 IDT72421 IDT7221 IDT72211 IDT72221 IDT72231 IDT72241 IDT72251 FEATURES: 64 x 9-bit
More information4Mb Async. FAST SRAM Specification
S6R4008V1M, S6R4016V1M, S6R4008C1M S6R4016C1M 4Mb Async. FAST SRAM Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO NETSOL PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING
More information64K x 16 1Mb Asynchronous SRAM
TSOP, FP-BGA Commercial Temp Industrial Temp 64K x 16 1Mb Asynchronous SRAM GS71116AGP/U 7, 8, 10, 12 ns 3.3 V V DD Center V DD and V SS Features Fast access time: 7, 8, 10, 12 ns CMOS low power operation:
More information256K x 16 4Mb Asynchronous SRAM
FP-BGA Commercial Temp Industrial Temp 256K x 16 4Mb Asynchronous SRAM GS74117AX 8, 10, 12 ns 3.3 V V DD Center V DD and V SS Features Fast access time: 8, 10, 12 ns CMOS low power operation: 130/105/95
More informationLP62S16256G-I Series. Document Title 256K X 16 BIT LOW VOLTAGE CMOS SRAM. Revision History. Rev. No. History Issue Date Remark
Preliminary 256K X 16 BIT LOW VOLTAGE CMOS SRAM ocument Title 256K X 16 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. History Issue ate Remark 0.0 Initial issue June 2, 2006 Preliminary PRELIMINARY
More information512K x 8 4Mb Asynchronous SRAM
SOJ, TSOP, FP-BGA Commercial Temp Industrial Temp 512K x 8 4Mb Asynchronous SRAM GS74108ATP/J/X 8, 10, 12 ns 3.3 V V DD Center V DD and V SS Features Fast access time: 8, 10, 12 ns CMOS low power operation:
More informationHIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM
HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM IDT713/ IDT714/ Features High-speed access Commercial: //35/55/1 (max.) Industrial: /55/1 (max.) Military: /35/55/1 (max.) Low-power operation IDT713/IDT714 Active:
More informationHIGH SPEED 2K X 8 DUAL-PORT STATIC RAM WITH INTERRUPTS
Features High-speed access Commercial: //35/55 (max.) Industrial: /55 (max.) Low-power operation IDT71321/IDT71421 Active: 3mW (typ.) Standby: 5mW (typ.) IDT71321/421 Active: 3mW (typ.) Standby: 1mW (typ.)
More informationMOS INTEGRATED CIRCUIT
DATA SHEET 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT MOS INTEGRATED CIRCUIT µpd43256b Description The µpd43256b is a high speed, low power, and 262,144 bits (32,768 words by 8 bits) CMOS static RAM. Battery
More informationQUICKSWITCH PRODUCTS HIGH-SPEED CMOS 10-BIT BUS SWITCH WITH FLOW-THROUGH PINOUT
QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 10-BIT BUS SWITCH WITH FLOW-THROUGH PINOUT IDTQS361 FEATURES: Enhanced N channel FET with no inherent diode to Vcc 5Ω bidirectional switches connect inputs to outputs
More information4Mb Async. FAST SRAM A-die Specification
S6R4008V1A, S6R4016V1A, S6R4008C1A, S6R4016C1A, S6R4008W1A S6R4016W1A 4Mb Async. FAST SRAM A-die Specification NETSOL RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
More informationQUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH DOUBLE-WIDTH BUS SWITCH
QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH DOUBLE-WIDTH BUS SWITCH IDTQS32X245 FEATURES: Enhanced N channel FET with no inherent diode to Vcc 5Ω bidirectional switches connect inputs to outputs Dual
More informationCMOS SRAM. K6T4008C1B Family. Document Title. Revision History. 512Kx8 bit Low Power CMOS Static RAM. Revision No. History. Remark. Draft Date 0.
Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft December 7, 1996 Advance 0.1 Revise - Changed Operating current by reticle
More informationAS7C34098A-8TIN 256K X 16 BIT HIGH SPEED CMOS SRAM
REVISION HISTORY Revision Description Issue Date Rev. 1.0 Initial Issue Jul.12.2012 Rev. 1.1 V CC - 0.2V revised as 0.2V for TEST CONDITION Jul.19.2012 of Average Operating Power supply Current Icc1 on
More informationAT28C16. 16K (2K x 8) CMOS E 2 PROM. Features. Description. Pin Configurations
Features Fast Read Access Time - 150 ns Fast Byte Write - 200 µs or 1 ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor
More informationCMOS PARALLEL-TO-SERIAL FIFO 1,024 x 16
CMOS PARALLEL-TO-SERIAL FIFO IDT72125 FEATURES: 25ns parallel port access time, 35ns cycle time 50MHz serial shift frequency ide x16 organization offering easy expansion Low power consumption (50mA typical)
More informationHIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM
HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM IDT713/ IDT714/ Features High-speed access Commercial: ///55/1 (max.) Industrial: /55/1 (max.) Military: //55/1 (max.) Low-power operation IDT713/IDT714 Active:
More informationMOS INTEGRATED CIRCUIT
DATA SHEET 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT MOS INTEGRATED CIRCUIT μpd43256b Description The μpd43256b is a high speed, low power, and 262,144 bits (32,768 words by 8 bits) CMOS static RAM. Battery
More informationFAST CMOS OCTAL BUFFER/LINE DRIVER
FAST CMOS OCTAL BUFFER/LINE DRIVER IDT54/74FCT244T/AT/CT FEATURES: Std., A, and C grades Low input and output leakage 1µA (max.) CMOS power levels True TTL input and output compatibility: VOH = 3. (typ.)
More informationQUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH DOUBLE-WIDTH BUS SWITCH
QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH DOUBLE-WIDTH BUS SWITCH IDTQS32X2245 FEATURES: Enhanced N channel FET with no inherent diode to Vcc Dual '245 function 25Ω resistor for low noise Low propagation
More information512Kx8 Monolithic SRAM, SMD
512Kx Monolithic SRAM, SMD 5962-956 FEATURES Access Times of,, 2,, 35, 45, 55 Data Retention Function (LPA version) TTL Compatible Inputs and Outputs Fully Static, No Clocks Organized as 512Kx Commercial,
More informationQUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUADRUPLE BUS SWITCH WITH INDIVIDUAL ACTIVE LOW ENABLES
QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUADRUPLE BUS SWITCH WITH INDIVIDUAL ACTIVE LOW ENABLES IDTQS315 FEATURES: Enhanced N channel FET with no inherent diode to Vcc Pin compatible with the 74 15 function
More informationIDT54/74FCT541/A/C FAST CMOS OCTAL BUFFER/LINE DRIVER DESCRIPTION: FUNCTIONAL BLOCK DIAGRAM
FAST CMOS OCTAL BUFFER/LINE DRIVER IDT/7FCT/A/C FEATURES: IDT/7FCT equivalent to FAST speed and drive IDT/7FCTA % faster than FAST IDT/7FCTC up to % faster than FAST IOL = ma (commercial) and 8mA (military)
More informationIDT54/74FCT244/A/C FAST CMOS OCTAL BUFFER/LINE DRIVER DESCRIPTION: FUNCTIONAL BLOCK DIAGRAM FEATURES: OEA OEB DA1 OA1 DB1 OB1 DA2 OA2 OB2 DB2 DA3 OA3
FAST CMOS OCTAL BUFFER/LINE DRIVER IDT/7FCT/A/C FEATURES: IDT/7FCTA equivalent to FAST speed and drive IDT/7FCTA % faster than FAST IDT/7FCTC up to % faster than FAST IOL = ma (commercial) and 8mA (military)
More information16Mb(1M x 16 bit) Low Power SRAM
16Mb(1M x 16 bit) Low Power SRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING
More informationIDT7130SA/LA IDT7140SA/LA
HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM IDT713/ IDT714/ Features High-speed access : ///1 (max.) Industrial: /1 (max.) Commercial: ////1 (max.) Low-power operation IDT713/IDT714 Active: mw (typ.) Standby:
More informationCMOS SyncFIFO 64 X 9, 256 x 9, 512 x 9, 1024 X 9, 2048 X 9 and 4096 x 9
Integrated evice Technology, Inc. CMOS SyncFIFO 64 X 9, 256 x 9, 512 x 9, 124 X 9, 248 X 9 and 496 x 9 IT72421 IT7221 IT72211 IT72221 IT72231 IT72241 FEATURES: 64 x 9-bit organization (IT72421) 256 x 9-bit
More informationMOS INTEGRATED CIRCUIT
DATA SHEET 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION MOS INTEGRATED CIRCUIT µpd444012a-x Description The µpd444012a-x is a high speed, low power, 4,194,304 bits (262,144
More informationQUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH 32-BIT MULTIWIDTH BUS SWITCHES
QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH 3-BIT MULTIWIDTH BUS SWITCHES IDTQS3X5 FEATURES: Enhanced N channel FET with no inherent diode to Vcc Bidirectional switches connect inputs to outputs Zero
More information128Kx8 CMOS MONOLITHIC EEPROM SMD
128Kx8 CMOS MONOLITHIC EEPROM SMD 5962-96796 WME128K8-XXX FEATURES Read Access Times of 125, 140, 150, 200, 250, 300ns JEDEC Approved Packages 32 pin, Hermetic Ceramic, 0.600" DIP (Package 300) 32 lead,
More informationFAST CMOS OCTAL BUFFER/LINE DRIVER
FAST CMOS OCTAL BUFFER/LINE DRIVER IDT74FCT240A/C FEATURES: IDT74FCT240A 25% faster than FAST IDT74FCT240C up to 55% faster than FAST 64mA IOL CMOS power levels (1mW typ. static) Meets or exceeds JEDEC
More informationQUICKSWITCH PRODUCTS 2.5V/3.3V 20-BIT HIGH BANDWIDTH BUS SWITCH
QUICKSWITCH PRODUCTS 2.5V/3.3V 20-BIT HIGH BANDWIDTH BUS SWITCH IDTQS32XVH34 FEATURES: N channel FET switches with no parasitic diode to VCC Isolation under power-off conditions No DC path to VCC or GND
More informationQUICKSWITCH PRODUCTS 2.5V / 3.3V 8:1 MUX / DEMUX HIGH BANDWIDTH BUS SWITCH
QUICKSWITCH PRODUCTS 2.5V / 3.3V 8:1 MUX / DEMUX HIGH BANDWIDTH BUS SWITCH IDTQS3VH251 FEATURES: N channel FET switches with no parasitic diode to VCC Isolation under power-off conditions No DC path to
More informationQUICKSWITCH PRODUCTS 2.5V / 3.3V 16-BIT HIGH BANDWIDTH BUS SWITCH
QUICKSWITCH PRODUCTS 2.5V / 3.3V 16-BIT HIGH BANDWIDTH BUS SWITCH IDTQS32XVH245 FEATURES: N channel FET switches with no parasitic diode to VCC Isolation under power-off conditions No DC path to VCC or
More informationHIGH-SPEED 128K x 8 DUAL-PORT STATIC RAM
Features True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access Commercial: /20 (max.) Industrial: 20 (max.) Low-power operation IDT7009L Active: 1W
More informationHIGH-SPEED 3.3V 1K X 8 DUAL-PORT STATIC RAM
HIGH-PEED 3.3V 1K X 8 DUA-PORT TATIC RAM Features High-speed access Commercial: //55 (max.) ow-power operation IDT71V Active: 3mW (typ.) tandby: 5mW (typ.) IDT71V Active: 3mW (typ.) tandby: 1mW (typ.)
More informationFAST CMOS SYNCHRONOUS PRESETTABLE BINARY COUNTERS
Integrated Device Technology, Inc. FAST CMOS SYNCHRONOUS PRESETTABLE BINARY COUNTERS IDT54/74FCT161/A/C IDT54/74FCT163/A/C FEATURES: IDT54/74FCT161/163 equivalent to FAST speed IDT54/74FCT161A/163A 35%
More informationLOW-VOLTAGE OCTAL BUS SWITCH
LOW-VOLTAGE OCTAL BUS ITCH IDT74CBTLV44 FEATURES: Pin-out compatible with standard '44 Logic products 5Ω A/B bi-directional switch Isolation under power-off conditions Over-voltage tolerant Latch-up performance
More informationLY62W K X 16 BIT LOW POWER CMOS SRAM
REVISION ISTORY Revision Description Issue Date Initial Issue Jul.13.2011 0 FEATURES Fast access time : 55/70ns ow power consumption: Operating current : 45/30mA (TYP.) Standby current : 10A (TYP.) -version
More informationLY61L102416A 1024K X 16 BIT HIGH SPEED CMOS SRAM
REVISION ISTORY Revision Description Issue Date Rev. 1.0 Initial Issued Jan.09. 2012 Rev. 1.1 Add 48 pin BGA package type. Mar.12. 2012 Rev. 1.2 1. VCC - 0.2V revised as 0.2 for TEST July.19. 2012 CONDITION
More informationAT29C K (32K x 8) 5-volt Only CMOS Flash Memory. Features. Description. Pin Configurations
Features Fast Read Access Time - 70 ns 5-Volt-Only Reprogramming Page Program Operation Single Cycle Reprogram (Erase and Program) Internal Address and Data Latches for 64-Bytes Internal Program Control
More informationQUICKSWITCH PRODUCTS 2.5V / 3.3V 20-BIT DUAL PORT, HIGH BANDWIDTH BUS SWITCH
QUICKSWITCH PRODUCTS 2.5V / 3.3V 20-BIT DUAL PORT, HIGH BANDWIDTH BUS SWITCH IDTQS3VH1662 FEATURES: N channel FET switches with no parasitic diode to Vcc Isolation under power-off conditions No DC path
More informationIS62WV12816DALL/DBLL IS65WV12816DALL/DBLL
IS62WV12816DALL/DBLL IS65WV12816DALL/DBLL 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM JUNE 2013 FEATURES High-speed access time: 35ns, 45ns, 55ns CMOS low power operation 36 mw (typical) operating
More information3.3V CMOS OCTAL BIDIRECTIONAL TRANSCEIVER
. CMOS OCTAL IDIRECTIONAL TRANSCEIVER. CMOS OCTAL IDIRECTIONAL TRANSCEIVER IDT7FCT/A FEATURES: 0. MICRON CMOS Technology ESD > 00 per MIL-STD-, Method 0; > 0 using machine model (C = 00pF, R = 0) VCC =.
More information3.3V CMOS 1-TO-5 CLOCK DRIVER
3. CMOS 1-TO-5 CLOCK DRIVER 3. CMOS 1-TO-5 CLOCK DRIVER IDT74FCT38075 FEATURES: Advanced CMOS Technology Guaranteed low skew < 100ps (max.) Very low duty cycle distortion< 250ps (max.) High speed propagation
More informationQUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH
QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH IDTQS3XVH25 FEATURES: N channel FET switches with no parasitic diode to VCC Isolation under power-off conditions No DC path to VCC or 5V
More informationQUICKSWITCH PRODUCTS 2.5V / 3.3V 8-BIT HIGH BANDWIDTH BUS SWITCH
QUICKSWITCH PRODUCTS 2.5V / 3.3V -BIT HIGH BANDWIDTH BUS SWITCH IDTQS3VH244 FEATURES: N channel FET switches with no parasitic diode to VCC Isolation under power-off conditions No DC path to VCC or GND
More informationWhite Electronic Designs
White Electronic Desig 512Kx8 STATIC RAM CMOS, MODULE FEATURES 512Kx8 bit CMOS Static Random Access Memory Access Times 2 through 1 Data Retention Function (EDI8F8512LP) TTL Compatible Inputs and Outputs
More informationCMOS SyncFIFO TM 256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18, and 4,096 x 18 INPUT REGISTER WRITE CONTROL LOGIC
CMOS SyncFIFO TM 256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18, and 4,096 x 18 IDT72205LB, IDT72215LB, IDT72225LB, IDT72235LB, IDT72245LB LEAD FINISH (SnPb) ARE IN EOL PROCESS - LAST TIME BUY EXPIRES JUNE
More informationLOW-VOLTAGE 10-BIT BUS SWITCH
LOW-VOLTAGE 0-BIT BUS ITCH IDT74CBTLV84 FEATURES: 5Ω A/B bi-directional bus switch Isolation under power-off conditions Over-voltage tolerant Latch-up performance exceeds 00mA VCC =.V -.6V, Normal Range
More informationLOW-VOLTAGE 24-BIT BUS EXCHANGE SWITCH
LOW-VOLTAGE 4-BIT BUS EXCHANGE ITCH LOW-VOLTAGE 4-BIT BUS EXCHANGE ITCH IDT74CBTLV6 FEATURES: 5Ω A/B bi-directional switch Isolation Under Power-Off Conditions Over-voltage tolerant Latch-up performance
More informationAT28C K (32K x 8) Paged CMOS E 2 PROM. Features. Description. Pin Configurations
AT28C256 Features Fast Read Access Time - 150 ns Automatic Page Write Operation Internal Address and Data Latches for 64-Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: 3 ms
More informationQUICKSWITCH PRODUCTS 2.5V / 3.3V 24-BIT HIGH BANDWIDTH BUS SWITCH
QUICKSWITCH PRODUCTS 2.5V / 3.3V 24-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: N channel FET switches with no parasitic diode to Vcc Isolation under power-off conditions No DC path to Vcc or 5V tolerant in
More informationACT S512K32 High Speed 16 Megabit SRAM Multichip Module
ACT S512K32 High Speed 16 Megabit SRAM Multichip Module Features 4 Low Power CMOS 512K x 8 SRAMs in one MCM Factory configured as 512K x 32; User configurable as 1M x 16 or 2M x 8 Input and Output TTL
More informationIDT74FST BIT 2:1 MUX/DEMUX SWITCH
16-BIT 2:1 MUX/DEMUX SWITCH IDT74FST163233 FEATURES: Bus switches provide zero delay paths Low switch on-resistance TTL-compatible input and output levels ESD > 200 per MIL-STD-883, Method 3015; > 20 using
More information2-Megabit (256K x 8) 5-volt Only CMOS Flash Memory AT29C020. Features. Description. Pin Configurations
Features Fast Read Access Time - 90 ns 5-Volt-Only Reprogramming Sector Program Operation Single Cycle Reprogram (Erase and Program) 1024 Sectors (256 bytes/sector) Internal Address and Data Latches for
More informationAS6C TINL 16M Bits LOW POWER CMOS SRAM
REVISION ISTORY Revision Description Issue Date Initial Issue Jan. 09. 2012 0 FEATURES Fast access time : 55ns ow power consumption: Operating current : 45mA (TYP.) Standby current : 4 A (TYP.) S-version
More informationEFA PAEA WCLKB WENB1 WENB2 FFA WRITE CONTROL LOGIC WRITE POINTER RESET LOGIC RSB
3.3 VOLT DUAL CMOS SyncFIFO DUAL 256 X, DUAL 512 X, DUAL 1,24 X, DUAL 2,48 X, DUAL 4,6 X, DUAL 8,12 X LEAD FINISH (SnPb) ARE IN EOL PROCESS - LAST TIME BUY EXPIRES JUNE 15, 218 FEATURES: The IDT72V81 is
More informationRev. No. History Issue Date Remark
Preliminary 512K X 8 OTP CMOS EPROM Document Title 512K X 8 OTP CMOS EPROM Revision History Rev. No. History Issue Date Remark 0.0 Initial issue June 17, 1998 Preliminary 1.0 Change CE from VIL to VIH
More informationDatasheetArchive.com. Request For Quotation
atasheetarchive.com Request For uotation Order the parts you need from our real-time inventory database. Simply complete a request for quotation form with your part information and a sales representative
More informationLY62L409716A 4M X 16 BIT LOW POWER CMOS SRAM
Y62409716A 4M 16 BIT OW POWER CMOS SRAM REVISION ISTORY Revision Description Issue Date Rev. 1.0 Initial Issue Jun.08.2017 yontek Inc. reserves the rights to change the specifications and products without
More informationProduct Change Notification (PCN)
Product Change Notification (PCN) Alliance Memory Inc. 511 Taylor Way, Suite 1, San Carlos, CA 94070 Main +1(650)610-6800 FAX +1(650)620-9211 Date: June 1, 2017 PCN TRACKING NO:PCN-29052017-01 Subject:
More informationIDT70V18L. HIGH-SPEED 3.3V 64K x 9 DUAL-PORT STATIC RAM
HIGH-SPEED 3.3V 64K x 9 DUAL-PORT STATIC RAM IDT70V18L LEAD FINISH (SnPb) ARE IN EOL PROCESS - LAST TIME BUY EXPIRES JUNE, 2018 Features True Dual-Ported memory cells which allow simultaneous access of
More informationLY62L102516A 1024K x 16 BIT LOW POWER CMOS SRAM
Y62102516A 1024K x 16 BIT OW POWER CMOS SRAM REVISION ISTORY Revision Description Issue Date Rev. 1.0 Initial Issue Jan. 09. 2012 Rev. 1.1 Deleted WRITE CYCE Notes : 1.WE#,, B#, UB# must be high or must
More informationHIGH SPEED 64K (4K X 16 BIT) IDT70824S/L SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM )
HIGH PEED 64K (4K X 16 BIT) IDT784/ EQUENTIA ACCE RANDOM ACCE MEMORY (ARAM ) Features High-speed access : /4 (max.) Commercial: ///4 (max.) ow-power operation IDT784 Active: 77mW (typ.) tandby: mw (typ.)
More informationIDT74LVC245A 3.3V CMOS OCTAL BUS TRANSCEIVER WITH 3-STATE OUTPUTS AND 5 VOLT TOLERANT I/O
3.3V CMOS OCTAL BUS TRANSCEIVER WITH 3-STATE OUTPUTS AND 5 T TOLERANT I/O IDT74LVC245A FEATURES: 0.5 MICRON CMOS Technology ESD > 200 per MIL-STD-883, Method 3015; > 20 using machine model (C = 200pF,
More informationWhite Electronic Designs
256Kx32 Static RM CMOS, High Speed Module FETURES 256Kx32 bit CMOS Static Random ccess Memory ccess Times: 12, 15, 20, and 25ns Individual Byte Selects Fully Static, No Clocks TTL Compatible I/O High Density
More informationLY62L K X 16 BIT LOW POWER CMOS SRAM
REVISION ISTORY Revision Description Issue Date Rev. 1.0 Initial Issue Jul.25.2004 Rev. 1.1 Revised Package Outline Dimension(TSOP-II) Apr.12.2007 Rev. 1.2 Added ISB1/IDR values when TA = 25 and TA = 40
More informationIDT74LVC541A 3.3V CMOS OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS AND 5 VOLT TOLERANT I/O
3.3V CMOS OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS AND 5 T TOLERANT I/O IDT74LVC541A FEATURES: 0.5 MICRON CMOS Technology ESD > 200 per MIL-STD-883, Method 3015; > 20 using machine model (C = 200pF, R
More informationEDI8G322048C DESCRIPTION FEATURES PIN CONFIGURATION PIN NAMES
2048K x 32 Static RM CMOS, High Speed Module FETURES n 2048K x 32 bit CMOS Static n Random ccess Memory ccess Times: 20, 25, and 35ns Individual Byte Selects Fully Static, No Clocks TTL Compatible I/O
More informationLY62L205016A 32M Bits ( 2Mx16 / 4Mx8 Switchable) LOW POWER CMOS SRAM
Y62205016A 32M Bits ( 2Mx16 / 4Mx8 Switchable) OW POWER CMOS SRAM REVISION ISTORY Revision Description Issue Date Rev. 1.0 Initial Issue Sep.06.2012 Rev. 1.1 Add 25 & 40 spec for ISB1 & IDR on page 4 &
More informationIDT74LVC244A 3.3V CMOS OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS, 5 VOLT TOLERANT I/O
3.3V CMOS OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS, 5 T TOLERANT I/O IDT74LVC244A FEATURES: 0.5 MICRON CMOS Technology ESD > 200 per MIL-STD-883, Method 3015; > 20 using machine model (C = 200pF, R = 0)
More informationIDT74CBTLV3257 LOW-VOLTAGE QUAD 2:1MUX/DEMUX BUS SWITCH
LOW-VOLTAGE QUAD 2:1 MUX/DEMUX BUS ITCH LOW-VOLTAGE QUAD 2:1MUX/DEMUX BUS ITCH IDT74CBTLV3257 FEATURES: Functionally equivalent to QS3257 5Ω switch connection between two ports Isolation under power-off
More informationIDT74FCT299/A/C FAST CMOS 8-INPUT UNIVERSAL SHIFT REGISTER DESCRIPTION: FUNCTIONAL BLOCK DIAGRAM
IT74FCT299 A/C FAST CMOS 8-INPUT UNIVERSAL SHIFT REGISTER IT74FCT299/A/C FEATURES: IT74FCT299 equivalent to FAST speed and drive I74FCT299A 25% faster than FAST IT74FCT299C 35% faster than FAST Equivalent
More informationWhite Electronic Designs
12Kx32 EEPROM MODULE, SMD 5962-9455 FEATURES Access Times of 120**, 140, 150, 200, 250, 300ns Packaging: 66-pin, PGA Type, 27.3mm (1.075") square, Hermetic Ceramic HIP (Package 400) 6 lead, 22.4mm sq.
More informationAT24C01A/02/04/08/16. 2-Wire Serial CMOS E 2 PROM. Features. Description. Pin Configurations. 1K (128 x 8) 2K (256 x 8) 4K (512 x 8) 8K (1024 x 8)
AT24C01A/02/04/08/16 Features Low Voltage and Standard Voltage Operation 5.0 (V CC = 4.5V to 5.5V) 2.7 (V CC = 2.7V to 5.5V) 2.5 (V CC = 2.5V to 5.5V) 1.8 (V CC = 1.8V to 5.5V) Internally Organized 128
More informationQUICKSWITCH PRODUCTS HIGH-SPEED CMOS 10-BIT BUS SWITCH
QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 10-BIT BUS SWITCH IDTQS338 FEATURES: Enhanced N channel FET with no inherent diode to Vcc 5Ω bidirectional switches connect inputs to outputs Zero propagation delay,
More informationIDTQS3VH383 QUICKSWITCH PRODUCTS 2.5V/3.3V 8-BIT HIGH BANDWIDTH BUS EXCHANGE BUS SWITCH
QUICKSWITCH PRODUCTS 2.5V/3.3V 8-BIT HIGH BANDWIDTH BUS EXCHANGE BUS SWITCH IDTQS3VH383 FEATURES: N channel FET switches with no parasitic diode to Vcc Isolation under power-off conditions No DC path to
More informationHIGH SPEED 2K X 8 DUAL-PORT STATIC RAM WITH INTERRUPTS
Features High-speed access Commercial: /25/35/55 (max.) Industrial: 25/55 (max.) Low-power operation IDT71321/IDT71421 ctive: 325mW (typ.) Standby: 5mW (typ.) IDT71321/421 ctive: 325mW (typ.) Standby:
More informationMy-MS. MM27C ,072 x 8 CMOS EPROM PRELIMINARY INFORMATION ISSI IS27C010 FEATURES DESCRIPTION FUNCTIONAL BLOCK DIAGRAM
IS27C010 ISSI MM27C010 131,072 x CMOS EPROM PRELIMINARY INFORMATION FEATURES Fast read access time: 90 ns JEDEC-approved pinout High-speed write programming Typically less than 16 seconds 5V ±10% power
More informationFEBRUARY/2008, V 1.c Alliance Memory Inc. Page 1 of 13
128K 16 BIT OW 512K POWER 8CMOS BIT OW SRAMPOWER CMOS SRAM FEATURES Fast access time : 55ns ow power consumption: Operating current : 20/18mA (TYP.) Standby current : 2µA (TYP.) Single 2.7V ~ 5.5V power
More informationLY62L K X 16 BIT LOW POWER CMOS SRAM
Y6225716 256K 16 BIT OW POWER CMOS SRAM REVISION ISTORY Revision Description Issue Date Rev. 1.0 Initial Issue Apr.19.2006 Rev. 2.0 Revised ISB(max) : 0.5mA => 1.25mA May.11.2006 Rev. 2.1 Adding 44-pin
More informationMB85R M Bit (128 K 8) Memory FRAM CMOS DS E DESCRIPTIONS FEATURES FUJITSU SEMICONDUCTOR DATA SHEET
FUJITSU SEMICONDUCTOR DATA SHEET DS05-13103-5E Memory FRAM CMOS 1 M Bit (128 K 8) MB85R1001 DESCRIPTIONS The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words x
More informationIDTQS3257 QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH QUAD 2:1 MUX/DEMUX DESCRIPTION: FUNCTIONAL BLOCK DIAGRAM FEATURES: APPLICATIONS:
HIGH-SPEED CMOS QUICKSWITCH QUAD :1 MUX/DEMUX FEATURES: Enhanced N channel FET with no inherent diode to Vcc 5Ω bidirectional switches connect inputs to outputs Pin compatible with the 7F57, 7FCT57, and
More information