2-Wire Serial EEPROM AT24C02A AT24C04A AT24C08A AT24C02A/04A/ 08A. Features. Description. Pin Configurations. 2K (256 x 8) 4K (512 x 8) 8K (1024 x 8)
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- Elfreda McKenzie
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1 Features Write Protect Pin for Hardware Data Protection Utilizes Different Array Protection Compared to the A24C02/04/08 Low Voltage and tandard Voltage Operation 5.0 (V CC = 4.5V to 5.5V) 2.7 (V CC = 2.7V to 5.5V) 2.5 (V CC = 2.5V to 5.5V) 1.8 (V CC = 1.8V to 5.5V) Internally Organized 256 x 8 (2K), 512 x 8 (4K) or 1024 x 8 (8K) 2-Wire erial Interface chmitt rigger, Filtered Inputs for Noise upperssion Bidirectional Data ransfer Protocol 100 khz (1.8V, 2.5V, 2.7V) and 400 khz (5V) Compatibility 8-Byte Page (2K), 16-Byte Page (4K, 8K) Write Modes Partial Page Writes Are Allowed elf-imed Write Cycle (10 ms max) High Reliability Endurance: 1 Million Write Cycles Data Retention: 100 Years ED Protection: >3000V Automotive Grade and Extended emperature Devices Available 8-Pin and 14-Pin JEDEC OIC, 8-Pin PDIP, and 8-Pin OP Packages Description he A24C02A/04A/08A provides 2048/4096/8192 bits of serial electrically erasable and programmable read only memory (EEPROM) organized as 256/512/1024 words of 8 bits each. he device is optimized for use in many industrial and commercial applications where low power and low voltage operation are essential. he A24C02A/04A/08A is available in space saving 8-pin PDIP, 8-pin and 14-pin JEDEC OIC, and 8-pin OP packages and is accessed via a 2-wire serial interface. In addition, the entire family is available in 5.0V (4.5V to 5.5V), 2.7V (2.7V to 5.5V), 2.5V (2.5V to 5.5V) and 1.8V (1.8V to 5.5V) versions. 2-Wire erial EEPROM 2K (256 x 8) 4K (512 x 8) 8K (1024 x 8) A24C02A A24C04A A24C08A Pin Configurations Pin Name Function A0 - A2 Address Inputs DA erial Data CL erial Clock Input WP Write Protect A0 A1 A2 GND 8-Pin PDIP VCC WP CL DA A24C02A/04A/ 08A NC No Connect 8-Pin OIC 14-Pin OIC A0 A1 A2 GND VCC WP CL DA NC A0 A1 NC A2 GND NC NC VCC WP NC CL DA NC A0 A1 A2 GND 8-Pin OP VCC WP CL DA Rev. 0976B 07/98 1
2 Absolute Maximum Ratings* Operating emperature C to +125 C torage emperature C to +150 C Voltage on Any Pin with Respect to Ground V to +7.0V Maximum Operating Voltage V *NOICE: tresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. his is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. DC Output Current ma Block Diagram Pin Description ERIAL CLOCK (CL): he CL input is used to positive edge clock data into each EEPROM device and negative edge clock data out of each device. ERIAL DAA (DA): he DA pin is bidirectional for serial data transfer. his pin is open-drain driven and may be wire-ored with any number of other open-drain or open collector devices. DEVICE/PAGE ADDREE (A2, A1, A0): he A2, A1 and A0 pins are device address inputs that are hard wired for the A24C02A. As many as eight 2K devices may be addressed on a single bus system (device addressing is discussed in detail under the Device Addressing section). he A24C04A uses the A2 and A1 inputs for hard wire addressing and a total of four 4K devices may be addressed on a single bus system. he A0 pin is a no connect. he A24C08A only uses the A2 input for hardwire addressing and a total of two 8K devices may be addressed on a single bus system. he A0 and A1 pins are no connects. WRIE PROEC (WP): he A24C02A/04A/08A has a Write Protect pin that provides hardware data protection. he Write Protect pin allows normal read/write operations when connected to ground (GND). When the Write Protect 2 A24C02A/04A/08A
3 A24C02A/04A/08A pin is connected to V CC, the write protection feature is enabled and operates as shown in the following table. WP Pin tatus At V CC At GND Part of the Array Protected 24C02A 24C04A 24C08A Upper Half (1K) Array Upper Half (2K) Array Normal Read/Write Operations Full (8K) Array Memory Organization A24C02A, 2K ERIAL EEPROM: Internally organized with 256 pages of 1-byte each, the 2K requires an 8 bit data word address for random word addressing. A24C04A, 4K ERIAL EEPROM: he 4K is internally organized with 256 pages of 2-bytes each. Random word addressing requires a 9 bit data word address. A24C08A, 8K ERIAL EEPROM: he 8K is internally organized with 4 blocks of 256 pages of 4-bytes each. Random word addressing requires a 10 bit data word address. Pin Capacitance Applicable over recommended operating range from A = 25 C, f = 1.0 MHz, V CC = +1.8V. ymbol est Condition Max Units Conditions C I/O Input/Output Capacitance (DA) 8 pf V I/O = 0V C IN Input Capacitance (A 0, A 1, A 2, CL) 6 pf V IN = 0V Note: 1. his parameter is characterized and is not 100% tested. DC Characteristics Applicable over recommended operating range from: AI = -40 C to +85 C, V CC = +1.8V to +5.5V, AC = 0 C to +70 C, V CC = +1.8V to +5.5V (unless otherwise noted). ymbol Parameter est Condition Min yp Max Units V CC1 upply Voltage V V CC2 upply Voltage V V CC3 upply Voltage V V CC4 upply Voltage V I CC upply Current V CC = 5.0V READ at 100 khz ma I CC upply Current V CC = 5.0V WRIE at 100 khz ma I B1 tandby Current V CC = 1.8V V IN = V CC or V µa I B2 tandby Current V CC = 2.5V V IN = V CC or V µa I B3 tandby Current V CC = 2.7V V IN = V CC or V µa I B4 tandby Current V CC = 5.0V V IN = V CC or V µa I LI Input Leakage Current V IN = V CC or V µa I LO Output Leakage Current V OU = V CC or V µa V IL Input Low Level (1) -0.6 V CC x 0.3 V V IH Input High Level (1) V CC x 0.7 V CC V V OL2 Output Low Level V CC = 3.0V I OL = 2.1 ma 0.4 V V OL1 Output Low Level V CC = 1.8V I OL = 0.15 ma 0.2 V Note: 1. V IL min and V IH max are reference only and are not tested. 3
4 AC Characteristics Applicable over recommended operating range from A = -40 C to +85 C, V CC = +1.8V to +5.5V, CL = 1 L Gate and 100 pf (unless otherwise noted). 2.7-, 2.5-, 1.8-volt 5.0-volt ymbol Parameter Min Max Min Max Units f CL Clock Frequency, CL khz t LOW Clock Pulse Width Low µs t HIGH Clock Pulse Width High µs t I Noise uppression ime (1) ns t AA Clock Low to Data Out Valid µs t BUF ime the bus must be free before a new transmission can start (1) µs t HD.A tart Hold ime µs t U.A tart et-up ime µs t HD.DA Data In Hold ime 0 0 µs t U.DA Data In et-up ime ns t R Inputs Rise ime (1) µs t F Inputs Fall ime (1) ns t U.O top et-up ime µs t DH Data Out Hold ime ns t WR Write Cycle ime ms Endurance (1) 5.0V, 25 C, Page Mode 1M 1M Note: 1. his parameter is characterized and is not 100% tested. Write Cycles Device Operation CLOCK and DAA RANIION: he DA pin is normally pulled high with an external device. Data on the DA pin may change only during CL low time periods (refer to Data Validity timing diagram). Data changes during CL high periods will indicate a start or stop condition as defined below. AR CONDIION: A high-to-low transition of DA with CL high is a start condition which must precede any other command (refer to tart and top Definition timing diagram). OP CONDIION: A low-to-high transition of DA with CL high is a stop condition. After a read sequence, the stop command will place the EEPROM in a standby power mode (refer to tart and top Definition timing diagram). ACKNOWLEDGE: All addresses and data words are serially transmitted to and from the EEPROM in 8 bit words. he EEPROM sends a zero to acknowledge that it has received each word. his happens during the ninth clock cycle. ANDBY MODE: he A24C02A/04A/08A features a low power standby mode which is enabled: (a) upon power-up and (b) after the receipt of the OP bit and the completion of any internal operations. MEMORY REE: After an interruption in protocol, power loss or system reset, any 2-wire part can be reset by following these steps:(a) Clock up to 9 cycles, (b) look for DA high in each cycle while CL is high and then (c) create a start condition as DA is high. 4 A24C02A/04A/08A
5 A24C02A/04A/08A Bus iming (CL: erial Clock, DA: erial Data I/O) Write Cycle iming (CL: erial Clock, DA: erial Data I/O) CL DA 8th BI ACK WORD n t WR (1) OP CONDIION AR CONDIION Note: 1. he write cycle time t WR is the time from a valid stop condition of a write sequence to the end of the interval clear/write cycle. 5
6 Data Validity tart and top Definition Output Acknowledge 6 A24C02A/04A/08A
7 A24C02A/04A/08A Device Addressing he 2K, 4K and 8K EEPROM devices all require an 8 bit device address word following a start condition to enable the chip for a read or write operation (refer to Figure 1). he device address word consists of a mandatory one, zero sequence for the first four most significant bits as shown. his is common to all the EEPROM devices. he next 3 bits are the A2, A1 and A0 device address bits for the 2K EEPROM. hese 3 bits must compare to their corresponding hard-wired input pins. he 4K EEPROM only uses the A2 and A1 device address bits with the third bit being a memory page address bit. he two device address bits must compare to their corresponding hard-wired input pins. he A0 pin is no connect. he 8K EEPROM only uses the A2 device address bit with the next 2 bits being for memory page addressing. he A2 bit must compare to its corresponding hard-wired input pin. he A1 and A0 pins are no connect. he eighth bit of the device address is the read/write operation select bit. A read operation is initiated if this bit is high and a write operation is initiated if this bit is low. Upon a compare of the device address, the EEPROM will output a zero. If a compare is not made, the chip will return to a standby state. Write Operations BYE WRIE: A write operation requires an 8 bit data word address following the device address word and acknowledgement. Upon receipt of this address, the EEPROM will again respond with a zero and then clock in the first 8 bit data word. Following receipt of the 8 bit data word, the EEPROM will output a zero and the addressing device, such as a microcontroller, must terminate the write sequence with a stop condition. At this time the EEPROM enters an internally-timed write cycle, t WR, to the nonvolatile memory. All inputs are disabled during this write cycle and the EEPROM will not respond until the write is complete (refer to Figure 2). PAGE WRIE: he 2K EEPROM is capable of an 8-byte page write, and the 4K and 8K devices are capable of 16- byte page writes. A page write is initiated the same as a byte write, but the microcontroller does not send a stop condition after the first data word is clocked in. Instead, after the EEPROM acknowledges receipt of the first data word, the microcontroller can transmit up to seven (2K) or fifteen (4K, 8K) more data words. he EEPROM will respond with a zero after each data word received. he microcontroller must terminate the page write sequence with a stop condition (refer to Figure 3). he data word address lower three (2K) or four (4K, 8K) bits are internally incremented following the receipt of each data word. he higher data word address bits are not incremented, retaining the memory page row location. When the word address, internally generated, reaches the page boundary, the following byte is placed at the beginning of the same page. If more than eight (2K) or sixteen (4K, 8K) data words are transmitted to the EEPROM, the data word address will roll over and previous data will be overwritten. ACKNOWLEDGE POLLING: Once the internally-timed write cycle has started and the EEPROM inputs are disabled, acknowledge polling can be initiated. his involves sending a start condition followed by the device address word. he read/write bit is representative of the operation desired. Only if the internal write cycle has completed will the EEPROM respond with a zero allowing the read or write sequence to continue. Read Operations Read operations are initiated the same way as write operations with the exception that the read/write select bit in the device address word is set to one. here are three read operations: current address read, random address read and sequential read. CURREN ADDRE READ: he internal data word address counter maintains the last address accessed during the last read or write operation, incremented by one. his address stays valid between operations as long as the chip power is maintained. he address roll over during read is from the last byte of the last memory page to the first byte of the first page. he address roll over during write is from the last byte of the current page to the first byte of the same page. Once the device address with the read/write select bit set to one is clocked in and acknowledged by the EEPROM, the current address data word is serially clocked out. he microcontroller does not respond with an input zero but does generate a following stop condition (refer to Figure 4). RANDOM READ: A random read requires a dummy byte write sequence to load in the data word address. Once the device address word and data word address are clocked in and acknowledged by the EEPROM, the microcontroller must generate another start condition. he microcontroller now initiates a current address read by sending a device address with the read/write select bit high. he EEPROM acknowledges the device address and serially clocks out the data word. he microcontroller does not respond with a zero but does generate a following stop condition (refer to Figure 5). EQUENIAL READ: equential reads are initiated by either a current address read or a random address read. After the microcontroller receives a data word, it responds 7
8 with an acknowledge. As long as the EEPROM receives an acknowledge, it will continue to increment the data word address and serially clock out sequential data words. When the memory address limit is reached, the data word Figure 1. Device Address address will roll over and the sequential read will continue. he sequential read operation is terminated when the microcontroller does not respond with a zero but does generate a following stop condition (refer to Figure 6). 2K A 2 A 1 A 0 R/W MD LB 4K A 2 A 1 P0 R/W 8K A 2 P1 P0 R/W Figure 2. Byte Write A R W RI DEVICE E ADDRE WORD ADDRE DAA O P DA LINE M L R A M L A A B / C B B CK CK BW K Figure 3. Page write A R W RI DEVICE ADDRE E WORD ADDRE (n) DAA (n) DAA (n + 1) DAA (n + x) O P DA LINE M B L R A A A A A / C CK CK CK CK B W K 8 A24C02A/04A/08A
9 A24C02A/04A/08A Figure 4. Current Address Read A R EAD R DEVICE ADDRE O P DA LINE M B L R / BW A C K DAA N O A C K Figure 5. Random Read W RI A R DEVICE ADDRE E WORD ADDRE n A R DEVICE ADDRE R EA D O P DA LINE M B L B R / W A M L A M L A DAA n N C B B CK B B CK O K A C K DUMMY WRIE Figure 6. equential Read 9
10 A24C02A Ordering Information t WR (max) (ms) I CC (max) (µa) I B (max) (µa) A24C02A-10PC A24C02AN-10C A24C02A-10C A24C02A-10C f MAX (khz) Ordering Code Package Operation Range A24C02A-10PI A24C02AN-10I A24C02A-10I A24C02A-10I A24C02A-10PC-2.7 A24C02AN-10C-2.7 A24C02A-10C-2.7 A24C02A-10C A24C02A-10PI-2.7 A24C02AN-10I-2.7 A24C02A-10I-2.7 A24C02A-10I A24C02A-10PC-2.5 A24C02AN-10C-2.5 A24C02A-10C-2.5 A24C02A-10C A24C02A-10PI-2.5 A24C02AN-10I-2.5 A24C02A-10I-2.5 A24C02A-10I A24C02A-10PC-1.8 A24C02AN-10C-1.8 A24C02A-10C-1.8 A24C02A-10C A24C02A-10PI-1.8 A24C02AN-10I-1.8 A24C02A-10I-1.8 A24C02A-10I-1.8 Package ype 8-Lead, 0.300" Wide, Plastic Dual Inline Package (PDIP) 8-Lead, 0.150" Wide, Plastic Gull Wing mall Outline (JEDEC OIC) 14-Lead, 0.150" Wide, Plastic Gull Wing mall Outline (OIC) 8-Lead, 0.170" Wide, hin hrink mall Outline Package (OP) Options Blank tandard Operation (4.5V to 5.5V) -2.7 Low-Voltage (2.7V to 5.5V) -2.5 Low-Voltage (2.5V to 5.5V) -1.8 Low-Voltage (1.8V to 5.5V) 10 A24C02A/04A/08A
11 A24C04A Ordering Information t WR (max) (ms) I CC (max) (µa) I B (max) (µa) A24C04A-10PC A24C04AN-10C A24C04A-10C A24C04A-10C A24C02A/04A/08A f MAX (khz) Ordering Code Package Operation Range A24C04A-10PI A24C04AN-10I A24C04A-10I A24C04A-10I A24C04A-10PC-2.7 A24C04AN-10C-2.7 A24C04A-10C-2.7 A24C04A-10C A24C04A-10PI-2.7 A24C04AN-10I-2.7 A24C04A-10I-2.7 A24C04A-10I A24C04A-10PC-2.5 A24C04AN-10C-2.5 A24C04A-10C-2.5 A24C04A-10C A24C04A-10PI-2.5 A24C04AN-10I-2.5 A24C04A-10I-2.5 A24C04A-10I A24C04A-10PC-1.8 A24C04AN-10C-1.8 A24C04A-10C-1.8 A24C04A-10C A24C04A-10PI-1.8 A24C04AN-10I-1.8 A24C04A-10I-1.8 A24C04A-10I-1.8 Package ype 8-Lead, 0.300" Wide, Plastic Dual Inline Package (PDIP) 8-Lead, 0.150" Wide, Plastic Gull Wing mall Outline (JEDEC OIC) 14-Lead, 0.150" Wide, Plastic Gull Wing mall Outline (OIC) 8-Lead, 0.170" Wide, hin hrink mall Outline Package (OP) Options Blank tandard Operation (4.5V to 5.5V) -2.7 Low-Voltage (2.7V to 5.5V) -2.5 Low-Voltage (2.5V to 5.5V) -1.8 Low-Voltage (1.8V to 5.5V) 11
12 A24C08A Ordering Information t WR (max) (ms) I CC (max) (µa) I B (max) (µa) A24C08A-10PC A24C08AN-10C A24C08A-10C A24C08A-10C f MAX (khz) Ordering Code Package Operation Range A24C08A-10PI A24C08AN-10I A24C08A-10I A24C08A-10I A24C08A-10PC-2.7 A24C08AN-10C-2.7 A24C08A-10C-2.7 A24C08A-10C A24C08A-10PI-2.7 A24C08AN-10I-2.7 A24C08A-10I-2.7 A24C08A-10I A24C08A-10PC-2.5 A24C08AN-10C-2.5 A24C08A-10C-2.5 A24C08A-10C A24C08A-10PI-2.5 A24C08AN-10I-2.5 A24C08A-10I-2.5 A24C08A-10I A24C08A-10PC-1.8 A24C08AN-10C-1.8 A24C08A-10C-1.8 A24C08A-10C A24C08A-10PI-1.8 A24C08AN-10I-1.8 A24C08A-10I-1.8 A24C08A-10I-1.8 Package ype 8-Lead, 0.300" Wide, Plastic Dual Inline Package (PDIP) 8-Lead, 0.150" Wide, Plastic Gull Wing mall Outline (JEDEC OIC) 14-Lead, 0.150" Wide, Plastic Gull Wing mall Outline (OIC) 8-Lead, 0.170" Wide, hin hrink mall Outline Package (OP) Options Blank tandard Operation (4.5V to 5.5V) -2.7 Low-Voltage (2.7V to 5.5V) -2.5 Low-Voltage (2.5V to 5.5V) -1.8 Low-Voltage (1.8V to 5.5V) 12 A24C02A/04A/08A
13 A24C02A/04A/08A Packaging Information, 8-Lead, 0.300" Wide, Plastic Dual Inline Package (PDIP) Dimensions in Inches and (Millimeters) JEDEC ANDARD M-001 BA, 8-Lead, 0.150" Wide, Plastic Gull Wing mall Outline (JEDEC OIC) Dimensions in Inches and (Millimeters).400 (10.16).355 (9.02).020 (.508).013 (.330) PIN (7.11).240 (6.10) PIN (3.99).150 (3.81).244 (6.20).228 (5.79).300 (7.62) REF.037 (.940).027 (.690).050 (1.27) BC.210 (5.33) MAX EAING PLANE.100 (2.54) BC.196 (4.98).189 (4.80).068 (1.73).053 (1.35).150 (3.81).115 (2.92).012 (.305).008 (.203).070 (1.78).045 (1.14).015 (.380) MIN.022 (.559).014 (.356).325 (8.26).300 (7.62) 0 15 REF.430 (10.9) MAX.010 (.254).004 (.102) 0 REF.010 (.254) (.203).050 (1.27).016 (.406), 14-Lead, 0.150" Wide, Plastic Gull Wing mall Outline (OIC) Dimensions in Inches and (Millimeters), 8-Lead, 0.170" Wide, Plastic hin mall Outline Package (OP) Dimensions in Millimeters and (Inches)*.020 (.508).013 (.330) PIN 1 PIN (4.01).152 (3.86).244 (6.20).228 (5.79) 6.50 (.256) 6.25 (.246).050 (1.27) BC 0.30 (.012) 0.19 (.008).344 (8.74).337 (8.56).068 (1.73).053 (1.35) 1.05 (.041) 0.80 (.033) 3.10 (.122) 2.90 (.114) 1.20 (.047) MAX.010 (.249).004 (.102).65 (.026) BC 0.15 (.006) 0.05 (.002) 0 8 REF.050 (1.27).016 (.406).010 (.249).008 (.191) 0 8 REF 4.5 (.177) 4.3 (.169) 0.75 (.030) 0.45 (.018) *Controlling dimension: millimeters 0.20 (.008) 0.09 (.004) 13
14 14 A24C02A/04A/08A
15 A24C02A/04A/08A 15
16 Atmel Headquarters Corporate Headquarters 2325 Orchard Parkway an Jose, CA EL (408) FAX (408) Europe Atmel U.K., Ltd. Coliseum Business Centre Riverside Way Camberley, urrey GU15 3YL England EL (44) FAX (44) Atmel Operations Atmel Colorado prings 1150 E. Cheyenne Mtn. Blvd. Colorado prings, CO EL (719) FAX (719) Atmel Rousset Zone Industrielle Rousset Cedex, France EL (33) FAX (33) Asia Atmel Asia, Ltd. Room 1219 Chinachem Golden Plaza 77 Mody Road simshatsui East Kowloon, Hong Kong EL (852) FAX (852) Japan Atmel Japan K.K. onetsu hinkawa Bldg., 9F hinkawa Chuo-ku, okyo Japan EL (81) FAX (81) Fax-on-Demand North America: 1-(800) International: 1-(408) literature@atmel.com Web ite BB 1-(408) Atmel Corporation Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company s standard warranty which is detailed in Atmel s erms and Conditions located on the Company s website. he Company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel s products are not authorized for use as critical components in life support devices or systems. Marks bearing and/or are registered trademarks and trademarks of Atmel Corporation. erms and product names in this document may be trademarks of others. Printed on recycled paper. 0976B 07/98
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Features Low-voltage and Standard-voltage Operation, V CC = 2.7V to 5.5V Internally Organized 16,384 x 8 and 32,768 x 8 2-wire Serial Interface Schmitt Trigger, Filtered Inputs for Noise Suppression Bi-directional
More information24C08/24C16. Two-Wire Serial EEPROM. Preliminary datasheet 8K (1024 X 8)/16K (2048 X 8) General Description. Pin Configuration
Two-Wire Serial EEPROM Preliminary datasheet 8K (1024 X 8)/16K (2048 X 8) Low-voltage Operation 1.8 (VCC = 1.8V to 5.5V) Operating Ambient Temperature: -40 C to +85 C Internally Organized 1024 X 8 (8K),
More informationBattery-Voltage. 256K (32K x 8) Parallel EEPROMs AT28BV256. Features. Description. Pin Configurations
Features Single 2.7V - 3.6V Supply Fast Read Access Time - 200 ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Internal Control Timer Fast Write Cycle Times Page Write
More information2-Wire Serial EEPROM AT24C01. Features. Description. Pin Configurations. 1K (128 x 8)
Features Low Voltage and Standard Voltage Operation 2.7 (V CC = 2.7V to 5.5V) 1.8 (V CC = 1.8V to 5.5V) Internally Organized 128 x 8 2-Wire Serial Interface Bidirectional Data Transfer Protocol 100 khz
More informationTwo-wire Serial EEPROM Smart Card Modules 1K (128 x 8) 2K (256 x 8) 4K (512 x 8) 8K (1024 x 8) 16K (2048 x 8)
Features Low-voltage and Standard-voltage Operation, VCC = 2.7V 5.5V Internally Organized 128 x 8 (1K), 256 x 8 (2K), 512 x 8 (4K), 1024 x 8 (8K), or 2048 x 8 (16K) Two-wire Serial Interface Schmitt Trigger,
More informationDIP Top View VCC WE A17 NC A16 A15 A12 A14 A13 A8 A9 A11 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 I/O1 I/O2 GND.
Features Fast Read Access Time - 70 ns 5-volt Only Reprogramming Sector Program Operation Single Cycle Reprogram (Erase and Program) 1024 Sectors (256 bytes/sector) Internal Address and Data Latches for
More information4-Megabit (512K x 8) 5-volt Only 256-Byte Sector Flash Memory AT29C040A. Features. Description. Pin Configurations
Features Fast Read Access Time - 120 ns 5-Volt Only Reprogramming Sector Program Operation Single Cycle Reprogram (Erase and Program) 2048 Sectors (256 bytes/sector) Internal Address and Data Latches for
More information1-Megabit (128K x 8) 5-volt Only Flash Memory AT29C010A. Features. Description. Pin Configurations
Features Fast Read Access Time - 70 ns 5-Volt Only Reprogramming Sector Program Operation Single Cycle Reprogram (Erase and Program) 1024 Sectors (128 bytes/sector) Internal Address and Data Latches for
More information2-wire Serial EEPROM AT24C21. 2-Wire, 1K Serial EEPROM. Features. Description. Not Recommended for New Designs. Pin Configurations.
Features 2-wire Serial Interface Schmitt Trigger, Filtered Inputs For Noise Suppression DDC1 / DDC2 Interface Compliant for Monitor Identification Low-voltage Operation 2.5 (V CC = 2.5V to 5.5V) Internally
More information64K (8K x 8) Low-voltage Parallel EEPROM with Page Write and Software Data Protection AT28LV64B. 3-Volt, 64K E 2 PROM with Data Protection
Features Single 3.3V ± 10% Supply Hardware and Software Data Protection Low-power Dissipation 15mAActiveCurrent 20 µa CMOS Standby Current Fast Read Access Time - 200 ns Automatic Page Write Operation
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FM24C02A 2-Wire Serial EEPROM Apr. 2010 FM24C02A 2-wrie Serial EEPROM Ver 1.3 1 INFORMATION IN THIS DOCUMENT IS INTENDED AS A REFERENCE TO ASSIST OUR CUSTOMERS IN THE SELECTION OF SHANGHAI FUDAN MICROELECTRONICS
More informationSPI Serial EEPROMs AT25010 AT25020 AT SPI, 1K Serial E 2 PROM. Features. Description. Pin Configurations 8-Pin PDIP. 1K (128 x 8) 2K (256 x 8)
Features Serial Peripheral Interface (SPI) Compatible Supports SPI Modes (,) and 3 (1,1) Low-Voltage and Standard-Voltage Operation 5. (V CC = 4.5V to 5.5V).7 (V CC =.7V to 5.5V) 1.8 (V CC = 1.8V to 3.6V).1
More informationFM24C02B/04B/08B/16B 2-Wire Serial EEPROM
FM24C02B/04B/08B/16B 2-Wire Serial EEPROM Sep. 2009 FM24C02B/04B/08B/16B 2-Wire Serial EEPROM Ver 1.7 1 INFORMATION IN THIS DOCUMENT IS INTENDED AS A REFERENCE TO ASSIST OUR CUSTOMERS IN THE SELECTION
More informationBL24C02/BL24C04/BL24C08/BL24C16
BL24C02/BL24C04/BL24C08/BL24C16 2K bits (256 X 8) / 4K bits (512 X 8) / 8K bits (1024 X 8) / 16K bits (2048 X 8) Two-wire Serial EEPROM Features Two-wire Serial Interface VCC = 1.8V to 5.5V Bi-directional
More information4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory AT49BV040 AT49BV040T AT49LV040 AT49LV040T
Features Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) Fast Read Access Time 70 ns Internal Program Control and Timer 16K Bytes Boot Block with Lockout Fast Chip Erase Cycle Time
More information2-wire Serial EEPROM AT24C01A AT24C02 AT24C04 AT24C08 AT24C16
Features Low-voltage and Standard-voltage Operation 2.7(V CC =2.7Vto5.5V) 1.8(V CC =1.8Vto5.5V) Internally Organized 128 x 8 (1K), 256 x 8 (2K), 512 x 8 (4K), 1024 x 8 (8K) or 2048 x 8 (16K) 2-wire Serial
More informationDIP Top View A18 A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND VCC A17 A14 A13 A8 A9 A11 A10 I/O7 I/O6 I/O5 I/O4 I/O3 VCC A18 A17
Features Single-voltage Operation 5V Read 5V Reprogramming Fast Read Access Time 55 ns Internal Program Control and Timer 16-Kbyte Boot Block with Lockout Fast Erase Cycle Time 10 seconds Byte-by-byte
More informationSOIC VCC RESET A11 A10 A9 A8 A7 A6 A5 A4 A12 A13 A14 A15 A16 A17 A18 A19 NC NC NC NC I/O0 RDY/BUSY I/O1 I/O7 I/O6 I/O5 I/O4 VCC I/O2 I/O3 GND GND
Features Single Voltage Operation 5V Read 5V Reprogramming Fast Read Access Time - 90 ns Internal Program Control and Timer 16K Bytes Boot Block With Lockout Fast Erase Cycle Time - 10 seconds Byte-By-Byte
More informationTwo-Wire Serial EEPROM AT24C164 (1)
Features Low Voltage and Standard Voltage Operation 2.7 (V CC = 2.7V to 5.5V) 1.8 (V CC = 1.8V to 5.5V) Internally Organized 2048 x 8 (16K) Two-Wire Serial Interface Schmitt Trigger, Filtered Inputs for
More informationFM24C1024A. Apr Data Sheet. Data Sheet FM24C1024A 2-wrie Serial EEPROM Ver 1.1 1
FM24C1024A 2-Wire Serial EEPROM Apr. 2013 FM24C1024A 2-wrie Serial EEPROM Ver 1.1 1 INFORMATION IN THIS DOCUMENT IS INTENDED AS A REFERENCE TO ASSIST OUR CUSTOMERS IN THE SELECTION OF SHANGHAI FUDAN MICROELECTRONICS
More information1-megabit (64K x 16) 5-volt Only Flash Memory AT49F1024 AT49F1025
Features Single-voltage Operation 5V Read 5V Reprogramming Fast Read Access Time 35 ns Internal Program Control and Timer 8K Word Boot Block with Lockout Fast Erase Cycle Time 10 seconds Word-by-word Programming
More informationTwo-wire Serial EEPROM AT24C01A AT24C02 AT24C04 AT24C08 (1) AT24C16 (2)
Features Low-voltage and Standard-voltage Operation.7 (V CC =.7V to.v).8 (V CC =.8V to.v) Internally Organized 8 x 8 (K), 6 x 8 (K), x 8 (4K), 04 x 8 (8K) or 048 x 8 (6K) Two-wire Serial Interface Schmitt
More informationSPI Serial EEPROMs AT25010 AT25020 AT SPI, 1K Serial E 2 PROM
Features Serial Peripheral Interface (SPI) Compatible Supports SPI Modes (,) and 3 (1,1) Low-voltage and Standard-voltage Operation 5. (V CC = 4.5V to 5.5V) 2.7 (V CC = 2.7V to 5.5V) 3. MHz Clock Rate
More informationWhen is Data Susceptible to Corruption
Parallel EEPROM Data Protection Advantages of EEPROMs EEPROMs provide the memory solution wherever reprogrammable, nonvolatile memory is required. They are easy to use, requiring little or no support hardware
More information2-wire Serial EEPROM AT24C01A AT24C02 AT24C04 AT24C08 AT24C16. Features. Description. Pin Configurations. 1K (128 x 8) 2K (256 x 8) 4K (512 x 8)
Features Low-voltage and Standard-voltage Operation 2.7 (V CC = 2.7V to 5.5V) 1.8 (V CC = 1.8V to 5.5V) Internally Organized 128 x 8 (1K), 256 x 8 (2K), 512 x 8 (4K), 1024 x 8 (8K) or 2048 x 8 (16K) 2-wire
More information2-wire Serial EEPROM AT24C1024. Features. Description. Pin Configurations. 1M (131,072 x 8)
Features Low-voltage Operation 2.7 (V CC = 2.7V to 5.5V) Internally Organized 3,072 x 8 2-wire Serial Interface Schmitt Triggers, Filtered Inputs for Noise Suppression Bi-directional Data Transfer Protocol
More information1-megabit (64K x 16) 3-volt Only Flash Memory AT49LV1024 AT49LV1025
Features Single-voltage Operation 3V Read 3.1V Programming Fast Read Access Time 55 ns Internal Program Control and Timer 8K Word Boot Block with Lockout Fast Erase Cycle Time 10 seconds Word-by-Word Programming
More information512K bitstwo-wire Serial EEPROM
General Description The provides 524,288 bits of serial electrically erasable and programmable read-only memory (EEPROM), organized as 65,536 words of 8 bits each. The device is optimized for use in many
More informationFM24C32A/64A 2-Wire Serial EEPROM
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More information4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory AT49BV040 AT49LV040
Features Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) Fast Read Access Time 70 ns Internal Program Control and Timer 16K Bytes Boot Block with Lockout Fast Chip Erase Cycle Time
More information2-Wire Serial EEPROM 32K (4096 x 8) 64K (8192 x 8) AT24C32A AT24C64A. Features. Description. Pin Configurations
Features Low-Voltage and Standard-Voltage Operation 2.7 (V CC = 2.7V to 5.5V) 1.8 (V CC = 1.8V to 5.5V) Low-Power Devices (I SB = 6 µa @ 5.5V) Available Internally Organized 4096 x 8, 8192 x 8 2-Wire Serial
More informationA24C08. AiT Semiconductor Inc. ORDERING INFORMATION
DESCRIPTION The provides 8192 bits of serial electrically erasable and programmable read-only memory (EEPROM), organized as 1024 words of 8 bits each. The device is optimized for use in many industrial
More information3-Wire Serial EEPROM AT93C46C
Features Low-Voltage and Standard-Voltage Operation 2.7(V CC =2.7Vto5.5V) 2.5(V CC =2.5Vto5.5V) 3-Wire Serial Interface Schmitt Trigger, Filtered Inputs for Noise Suppression 2MHzClockRate(5V) Self-Timed
More informationFPGA Configuration EEPROM Memory AT17C65 AT17LV65 AT17C128 AT17LV128 AT17C256 AT17LV256
Features EE Programmable 65,536 x 1-, 131,072 x 1-, and 262,144 x 1-bit Serial Memories Designed to Store Configuration Programs for Field Programmable Gate Arrays (FPGAs) In-System Programmable via 2-wire
More information256K (32K x 8) Paged Parallel EEPROMs AT28C256. Features. Description
Features Fast Read Access Time - 150 ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: 3 ms or 10 ms
More informationParallel EEPROM Die Products. Die Products. Features. Description. Testing
Features High Performance CMOS Technology Low Power Dissipation - Active and Standby Hardware and Software Data Protection Features DATA Polling for End of Write Detection High Reliability Endurance: 10
More informationA24C02. AiT Semiconductor Inc. ORDERING INFORMATION
DESCRIPTION provides 2048 bits of serial electrically erasable and programmable read-only memory (EEPROM), organized as 256 words of 8 bits each. The device is optimized for use in many industrial and
More information256 (32K x 8) High-speed Parallel EEPROM AT28HC256
Features Fast Read Access Time 70 ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: 3 ms or 10 ms Maximum
More informationFPGA Configuration EEPROM Memory AT17C020A AT17LV020A
Features Serial EEPROM Family for Configuring Altera FLEX Devices Simple Interface to SRAM FPGAs EE Programmable 2M-bit Serial Memories Designed to Store Configuration Programs for Field Programmable Gate
More information8-Megabit 5-volt Only Serial DataFlash AT45D081. Features. Description
Features Single 4.5V - 5.5V Supply Serial Interface Architecture Page Program Operation Single Cycle Reprogram (Erase and Program) 4096 Pages (264 Bytes/Page) Main Memory Two 264-Byte SRAM Data Buffers
More informationFM24C04A/08A 2-Wire Serial EEPROM
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More informationACE24C512C Two-wire serial EEPROM
Description The ACE24C512C is a 512-Kbit I 2 C-compatible Serial EEPROM (Electrically Erasable Programmable Memory) device. It contains a memory array of 64 K 8 bits, which is organized in 128-byte per
More informationFremont Micro Devices, Inc.
FEATURES Low voltage and low power operations: FT24C02/04/08/16: V CC = 2.5V to 5.5V FT24C02A/04A/08A/16A: V CC = 1.8V to 5.5V Maximum Standby current < 1µA (typically 0.02µA and 0.06µA @ 1.8V and 5.5V
More informationACE24AC128 Two-wire Serial EEPROM
Description The ACE24AC128 series are 131,072 bits of serial Electrical Erasable and Programmable Read Only Memory, commonly known as EEPROM. They are organized as 16,384 words of 8 bits (one byte) each.
More informationTwo-wire Serial EEPROM AT24C11
Features Low Voltage and Standard Voltage Operation 2.7 (V CC = 2.7V to 5.5V).8 (V CC =.8V to 5.5V) Internally Organized 28 x 8 Two-wire Serial Interface Bidirectional Data Transfer Protocol 400 khz (.8V)
More informationTSSOP CLK/IN IN IN IN IN IN IN IN IN IN IN GND VCC IN I/O I/O I/O I/O I/O I/O I/O I/O IN OE/IN CLK/IN 1 VCC
* Features Industry Standard Architecture Emulates Many 24-pin PALs Low-cost Easy-to-use Software Tools High-speed Electrically-erasable Programmable Logic Devices 7.5 ns Maximum Pin-to-pin Delay Several
More informationSecure Microcontrollers for Smart Cards. AT90SC Summary
Features High-performance, Low-power 8-bit AVR RISC Architecture 120 Powerful Instructions Most Single Clock Cycle Execution Up to 64K Bytes Flash Program Memory Endurance: 10K Write/Erase Cycles Up to
More informationDIP Top View VCC RESET A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND A14 A13 A8 A9 A11 A10 I/O7 I/O6 I/O5 I/O4 I/O3
Features Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV) Fast Read Access Time - 70 ns Internal Program Control and Timer Sector Architecture One 16K Byte Boot Block with Programming
More informationA24C64. AiT Semiconductor Inc. ORDERING INFORMATION
DESCRIPTION provides 65536 bits of serial electrically erasable and programmable read-only memory (EEPROM) organized as 8192 words of 8 bits each. The is optimized for use in many industrial and commercial
More informationACE24AC64 Two-wire Serial EEPROM
Description The ACE24AC64 series are 65,536 bits of serial Electrical Erasable and Programmable Read Only Memory, commonly known as EEPROM. They are organized as 8192 words of 8 bits (one byte) each. The
More informationGT24C02. 2-Wire. 2Kb Serial EEPROM (Smart Card application)
ADVANCED GT24C02 2-Wire 2Kb Serial EEPROM (Smart Card application) www.giantec-semi.com a0 1/19 Table of Content 1 FEATURES...3 2 DESCRIPTION...4 3 PIN CONFIGURATION...5 4 PIN DESCRIPTIONS...6 5 BLOCK
More information2-wire Serial EEPROM AT24C01A AT24C02 AT24C04 AT24C08 (1) AT24C16 (2) Features. Description. Pin Configurations. 1K (128 x 8) 2K (256 x 8)
Features Low-voltage and Standard-voltage Operation 2.7 (V CC = 2.7V to 5.5V) 1.8 (V CC = 1.8V to 5.5V) Internally Organized 128 x 8 (1K), 256 x 8 (2K), 512 x 8 (4K), 1024 x 8 (8K) or 2048 x 8 (16K) 2-wire
More informationTwo-wire Serial EEPROM 4K (512 x 8) 8K (1024 x 8) AT24C04B AT24C08B. Features. Description. Low-voltage and Standard-voltage Operation 1.
Features Low-voltage and Standard-voltage Operation.8 (V CC =.8V to.v) Internally Organized x 8 (K), or 0 x 8 (8K) Two-wire Serial Interface Schmitt Trigger, Filtered Inputs for Noise Suppression Bidirectional
More informationAT45DB Megabit 2.7-Volt Only Serial DataFlash AT45DB041. Features. Description. Pin Configurations
Features Single 2.7V - 3.6V Supply Serial Interface Architecture Page Program Operation Single Cycle Reprogram (Erase and Program) 2048 Pages (264 Bytes/Page) Main Memory Two 264-Byte Data Buffers - Allows
More information256 (32K x 8) High-speed Parallel EEPROM AT28HC256N. Features. Description. Pin Configurations
Features Fast Read Access Time 90 ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: 3 ms or 10 ms Maximum
More information64K (8K x 8) Parallel EEPROM with Page Write and Software Data Protection AT28C64B. Features. Description. Pin Configurations
Features Fast Read Access Time 150 ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Fast Write Cycle Times Page Write Cycle Time: 10 ms Maximum (Standard) 2 ms Maximum (Option)
More informationFM24C128A 2-Wire Serial EEPROM
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More informationGT24C WIRE. 1024K Bits. Serial EEPROM
GT24C1024 2-WIRE 1024K Bits Serial EEPROM Copyright 2013 Giantec Semiconductor Inc. (Giantec). All rights reserved. Giantec reserves the right to make changes to this specification and its products at
More informationGT24C256 2-WIRE. 256K Bits. Serial EEPROM
GT24C256 2-WIRE 256K Bits Serial EEPROM Copyright 2013 Giantec Semiconductor Inc. (Giantec). All rights reserved. Giantec reserves the right to make changes to this specification and its products at any
More informationHighperformance EE PLD ATF16V8B ATF16V8BQ ATF16V8BQL. Features. Block Diagram. All Pinouts Top View
Features Industry-standard Architecture Emulates Many 20-pin PALs Low-cost Easy-to-use Software Tools High-speed Electrically-erasable Programmable Logic Devices 7.5 ns Maximum Pin-to-pin Delay Several
More informationVCC CS SO WP GND HOLD SCK SI VCC HOLD CS SO NC NC SCK SI WP GND
Features Serial Peripheral Interface (SPI) Compatible Supports SPI Modes (,) and 3 (,) Low-voltage and Standard-voltage Operation. (V CC = 4.V to.v). (V CC =.V to.v).8 (V CC =.8V to 3.6V) 3. MHz Clock
More informationACE24AC02A1 Two-wire Serial EEPROM
Description The ACE24AC02A1 is 2048 bits of serial Electrical Erasable and Programmable Read Only Memory, commonly known as EEPROM. They are organized as 256 words of 8 bits (1 byte) each. The devices
More informationACE24AC16B Two-wire Serial EEPROM
Description The ACE24AC16B is 16,384 bits of serial Electrical Erasable and Programmable Read Only Memory, commonly known as EEPROM. They are organized as 2,048 words of 8 bits (1 byte) each. The devices
More informationGT24C64 2-WIRE. 64K Bits. Serial EEPROM
GT24C64 2-WIRE 64K Bits Serial EEPROM Copyright 2013 Giantec Semiconductor Inc. (Giantec). All rights reserved. Giantec reserves the right to make changes to this specification and its products at any
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ATA Series Conversions from Altera FPGA Serial Configuration Memories Introduction The Atmel ATA FPGA Configuration EEPROM () is a serial memory that can be used to load SRAM based FPGAs. This application
More informationACE24AC02A3C Two-wire Serial EEPROM
Description The ACE24AC02A3C is 2048 bits of serial Electrical Erasable and Programmable Read Only Memory, commonly known as EEPROM. They are organized as 256 words of 8 bits (1 byte) each. The devices
More informationEPROM. Application Note CMOS EPROM. Interfacing Atmel LV/BV EPROMs on a Mixed 3-Volt/5- Volt Data Bus
Interfacing Atmel LV/BV EPROMs on a Mixed 3-volt/5-volt Data Bus Introduction Interfacing Atmel Corporation s low voltage (LV/BV) EPROMs on a common data bus with standard 5-volt devices can be achieved
More informationDIP Top View VCC A12 A14 A13 A6 A5 A4 A3 A2 A1 A0 A8 A9 A11 A10 I/O7 I/O6 I/O0 I/O1 I/O2 I/O5 I/O4 I/O3 GND. TSOP Top View Type 1 A11 A9 A8 A13 A14
Features Fast Read Access Time 70 ns 5-volt Only Reprogramming Page Program Operation Single Cycle Reprogram (Erase and Program) Internal Address and Data Latches for 64 Bytes Internal Program Control
More information1-Megabit (128K x 8) 5-volt Only Flash Memory AT29C010A. Features. Description. Pin Configurations
Features Fast Read Access Time - 70 ns 5-Volt Only Reprogramming Sector Program Operation Single Cycle Reprogram (Erase and Program) 1024 Sectors (128 bytes/sector) Internal Address and Data Latches for
More informationFM24C64D 2-Wire Serial EEPROM With Unique ID and Security Sector
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Fremont Micro Devices wo-ire erial EEPOM 512 (8-bit wide) F24512 FEUE Low voltage and low power operations: F24512: V = 1.8V to 5.5V Maximum tandby current < 1µ (typically 0.02µ and 0.06µ @ 1.8V and 5.5V
More informationTwo-wire Serial EEPROM AT24C256B. Not Recommended for New Design
Features Low-voltage and Standard-voltage Operation 1.8 (V CC = 1.8V to 5.5V) Internally Organized as 32,768 x 8 Two-wire Serial Interface Schmitt Trigger, Filtered Inputs for Noise Suppression Bidirectional
More information1-megabit (64K x 16) 3-volt Only Flash Memory AT49BV1024A AT49LV1024A
Features Single-voltage Operation Read/Write Operation: 2.7V to 3.6V (BV). 3.0V to 3.6V(LV) Fast Read Access Time 45 ns Internal Program Control and Timer 8K Word Boot Block with Lockout Fast Erase Cycle
More information64K (8K x 8) High Speed Parallel EEPROM with Page Write and Software Data Protection AT28HC64BF
Features Fast Read Access Time 70 ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Fast Write Cycle Times Page Write Cycle Time: 2 ms Maximum (Standard) 1 to 64-byte Page
More information64K (8K x 8) High Speed Parallel EEPROM with Page Write and Software Data Protection AT28HC64BF
Features Fast Read Access Time 70 ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Fast Write Cycle Times Page Write Cycle Time: 2 ms Maximum (Standard) 1 to 64-byte Page
More informationHT24LC02. CMOS 2K 2-Wire Serial EEPROM. Pin Assignment. Features. General Description. Block Diagram. Pin Description
CMOS K -Wire Serial EEPROM Features Operating voltage.v~5.5v for temperature 0C to+70c.4v~5.5v for temperature 40C to+85c Low power consumption Operation: 5mA max. Standby: 5A max. Internal organization:
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AVR030: Getting Started with C for AVR Features How to Open a New Project Description of Option Settings Linker Command File Examples Writing and Compiling the C Code How to Load the Executable File Into
More informationGT34C02. 2Kb SPD EEPROM
Advanced GT34C02 2Kb SPD EEPROM Copyright 2010 Giantec Semiconductor Inc. (Giantec). All rights reserved. Giantec reserves the right to make changes to this specification and its products at any time without
More informationTwo-wire Serial EEPROM AT24C512
Features Low-voltage and Standard-voltage Operation 2.7 (V CC = 2.7V to 5.5V).8 (V CC =.8V to 3.6V) Internally Organized 65,536 x 8 Two-wire Serial Interface Schmitt Triggers, Filtered Inputs for Noise
More information1-Megabit (128K x 8) Low Voltage Paged Parallel EEPROMs AT28LV010
BDTIC www.bdtic.com/atmel Features Single 3.3V ± 10% Supply Fast Read Access Time 200 ns Automatic Page Write Operation Internal Address and Data Latches for 128 Bytes Internal Control Timer Fast Write
More information8-lead PDIP A0 A1 A2 GND VCC WP SCL SDA. 8-lead dbga2 A0 A1 A2 GND A0 A1 A2 GND. Bottom View. 8-lead Ultra Lead Frame Land Grid Array A0 A1 A2
1. Features Low-voltage and Standard-voltage Operation 1.8 (V CC = 1.8V to 5.5V) Internally Organized as 16,384 x 8 Two-wire Serial Interface Schmitt Trigger, Filtered Inputs for Noise Suppression Bidirectional
More informationMarking side (top view)
BL24C64 64Kbits (8,192 8) Features Compatible with all I 2 C bidirectional data transfer protocol Memory array: 64 Kbits (8 Kbytes) of EEPOM Page size: 32 bytes ingle supply voltage and high speed: 1 MHz
More informationDistributed by: www.jameco.com 1-800-831-4242 he content and copyrights of the attached material are the property of its owner. FM24256 256 Bit 2-Wire Bus Interface erial EEPROM with Write Protect General
More information256K (32K x 8) 5-volt Only Flash Memory AT29C256
Features Fast Read Access Time 70 ns 5-volt Only Reprogramming Page Program Operation Single Cycle Reprogram (Erase and Program) Internal Address and Data Latches for 64 Bytes Internal Program Control
More information512K (64K x 8) 5-volt Only Flash Memory AT29C512
Features Fast Read Access Time 70 ns 5-volt Only Reprogramming Sector Program Operation Single Cycle Reprogram (Erase and Program) 512 Sectors (128 Bytes/Sector) Internal Address and Data Latches for 128
More informationProduct Description. Application Note. AVR360: XmodemCRC Receive Utility for the AVR. Features. Theory of Operation. Introduction
AVR360: XmodemCRC Receive Utility for the AVR Features Programmable Baud Rate Half Duplex 128 Byte Data Packets CRC Data Verification Framing Error Detection Overrun Detection Less than 1k Bytes of Code
More informationOrCAD Support for Atmel PLDs. Application Note. OrCAD Support for Atmel PLDs. Overview
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More informationa Serial Peripheral Interace (SPI). Embedded RISC Microcontroller Core Peripheral
Features Full-duplex, 3-wire Synchronous Data Transfer Master or Slave Operation Maximum Bit Frequency of f CLOCK /4 (in M-bits/second) LSB First or MSB First Data Transfer Four Programmable Bit Rates
More information4-megabit (512K x 8) 5-volt Only 256-byte Sector Flash Memory AT29C040A
Features Fast Read Access Time 90 ns 5-volt Only Reprogramming Sector Program Operation Single Cycle Reprogram (Erase and Program) 2048 Sectors (256 Bytes/Sector) Internal Address and Data Latches for
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