2SK522. Silicon N-Channel Junction FET. Application. Outline. VHF amplifier, Mixer, local oscillator SPAK. 1. Gate 2. Source 3.
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1 Silicon N-Channel Junction FET Application VHF amplifier, Mixer, local oscillator Outline SPAK Gate. Source 3. Drain
2 Absolute Maximum Ratings (Ta = C) Item Symbol Ratings Unit Gate to drain voltage V GDO 30 V Gate current I G ma Drain current I D 0 ma Channel power dissipation Pch 00 mw Channel temperature Tch 10 C Storage temperature Tstg to +10 C Electrical Characteristics (Ta = C) Item Symbol Min Typ Max Unit Test conditions Gate to drain breakdown V (BR)GDO 30 V I G = 0 µa, I S = 0 voltage Gate cutoff current I GSS na V GS = 0. V, V DS = 0 Drain current I DSS * ma V DS = V, Gate to source cutoff voltage V GS(off) 3 V V DS = V, I D = µa Forward transfer admittance y 8 ms V fs DS = V,, f = 1 khz Input capacitance Ciss 6.8 pf V DS = V,, f = 1 MHz Reverse transfer capacitance Crss 0.1 pf Power gain PG 0 7 db V DS = V,, f = 0 MHz Noise figure NF 1.7. db Note: 1. The is grouped by I DSS as follows. Drain D E F I DSS 4 to 8 6 to to 0
3 Channel Power Dissipation Pch (mw) Maximum Channel Power Dissipation Curve Ambient Temperature Ta ( C) Drain Current I D (ma) Typical Output Characteristics (1) 0. V Pch = 00 mw Typical Output Characteristics () 1 Typical Transfer Characteristics Drain Current I D (ma) V Drain Current I D (ma) V DS = V F E D Gate to Source Voltage V GS (V) 3
4 Forward Transfer Admittance yfs (ms) 1 Forward Transfer Admittance vs. f = 1 khz Ta = C C 7 C 0 1 Forward Transfer Admittance yfs (ms) Forward Transfer Admittance vs. Drain Current V DS = V f = 1 khz Drain Current I D (ma) Input Capacitance Ciss (pf) 0 Input Capacitance vs. f = 1 MHz Reverse Transfer Capacitance Crss (pf) Reverse Transfer Capacitance vs. f = 1 MHz
5 00 Output Capacitance vs. 30 Power Gain vs. Output Capacitance Coss (pf) f = 1 MHz Power Gain PG (db) 0 f = 0 MHz Noise Figure vs. Noise Figure NF (db) 6 4 f = 0 MHz
6 SG Output Impedance 0 Power Gain and Noise Figure Test Circuit Shield.4 D.U.T. 3.0 C 4,700 1 L 1 C L 1,000 0 V.V S.G. V DD Unit R : Ω C : pf C 1, C : 0 to 30pF Max Variable Air L 1 : 3. T φ1 mmφ Copper Ribbon, Tin plated mm Inside dia. L : 4. T φ1 mmφ Copper Ribbon, Tin plated mm Inside dia. 6
7 4. Max. Max Unit: mm 0.6 Max 0.4 ± Max 14. Min 3. Max 0.4 ± Hitachi Code JEDEC EIAJ Weight (reference value) SPAK 0. g
8 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi s or any third party s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party s rights, including intellectual property rights, in connection with use of the information contained in this document.. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., -6-, Ohte-machi, Chiyoda-ku, Tokyo , Japan Tel: Tokyo (03) Fax: (03) URL NorthAmerica : Europe : Asia (Singapore) : Asia (Taiwan) : Asia (HongKong) : Japan : For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 9134 Tel: <1> (408) Fax: <1>(408) Hitachi Europe GmbH Electronic components Group Dornacher Stra e 3 D-86 Feldkirchen, Munich Germany Tel: <49> (89) Fax: <49> (89) Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (168) 8000 Fax: <44> (168) 7783 Hitachi Asia Pte. Ltd. 16 Collyer Quay #0-00 Hitachi Tower Singapore Tel: 3-0 Fax: Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei () Tel: <886> () Fax: <886> () Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <8> () Fax: <8> () Telex: 4081 HITEC HX Copyright ' Hitachi, Ltd., All rights reserved. Printed in Japan.
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