2SK1056, 2SK1057, 2SK1058
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1 SK6, SK7, SK8 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with SJ160, SJ161 and SJ16 Features Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier
2 SK6, SK7, SK8 Outline TO-3P D G 1 3 S 1. Gate. Source (Flange) 3. Drain Absolute Maximum Ratings (Ta = C) Item Symbol Ratings Unit Drain to source voltage SK6 V DSX V SK7 140 SK8 160 Gate to source voltage V GSS ±1 V Drain current I D 7 A Body to drain diode reverse drain current I DR 7 A Channel dissipation Pch* 1 0 W Channel temperature Tch 10 C Storage temperature Tstg to +10 C Note: 1. Value at T C = C
3 SK6, SK7, SK8 Electrical Characteristics (Ta = C) Item Symbol Min Typ Max Unit Test conditions Drain to source SK6 V (BR)DSX V I D = ma, V GS = V breakdown voltage SK7 140 SK8 160 Gate to source breakdown voltage V (BR)GSS ±1 V I G = ±0 µa, V DS = 0 Gate to source cutoff voltage V GS(off) V I D = 0 ma, V DS = V Drain to source saturation voltage V DS(sat) 1 V I D = 7 A, V GD = 0 * 1 Forward transfer admittance yfs S I D = 3 A, V DS = V * 1 Input capacitance Ciss 600 pf V GS = V, V DS = V, Output capacitance Coss 30 pf f = 1 MHz Reverse transfer capacitance Crss pf Turn-on time t on 180 ns V DD = 0 V, I D = 4 A, Turn-off time t off 60 ns Note: 1. Pulse test 3
4 SK6, SK7, SK8 Channel Dissipation Pch (W) Power vs. Temperature Derating 0 0 Case Temperature T C ( C) 10 0 Maximum Safe Operation Area I D max (Continuous) PW = ms 1 shot DC Operation (T C = C) PW = 0 ms 1 shot PW = 1 s 1 shot Ta = C 0. SK6 SK7 SK Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics V GS = V T C = C Pch = 0 W Drain to Source Voltage V DS (V) V DS = V T C = C Gate to Source Voltage V GS (V) 4
5 SK6, SK7, SK8 Drain to Source Saturation Voltage V DS (on) (V) V GD = 0 Drain to Source Saturation Voltage vs. Drain Current C 7 C T C = C Drain to Source Voltage V DS (V) Drain to Source Voltage vs. Gate to Source Voltage T C = C A A I D = 1 A Gate to Source Voltage V GS (V) Input Capacitance Ciss (pf) Input Capacitance vs. Gate Source Voltage V DS = V f = 1 MHz Gate to Source Voltage V GS (V) Forward Transfer Admittance yfs (S) Forward Transfer Admittance vs. Frequency T C = C V DS = V I D = A k 30 k 0 k 300 k 1 M 3 M M Frequency f (Hz)
6 SK6, SK7, SK8 00 Switching Time vs. Drain Current Switching Time ton,toff (ns) t on t off Switching Time Test Circuit Output R L = Ω Input PW = 0µs duty ratio = 1 % 0 Ω 0 V Input Waveforms 90 % % t on t off Output % 90 % 6
7 1.6 ± 0.3 φ3. ± 0..0 ± ± Unit: mm Max ± ± ± ± ± ± 0..4 ± 0. Hitachi Code JEDEC EIAJ Weight (reference value) TO-3P Conforms.0 g
8 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi s or any third party s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party s rights, including intellectual property rights, in connection with use of the information contained in this document.. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., -6-, Ohte-machi, Chiyoda-ku, Tokyo , Japan Tel: Tokyo (03) Fax: (03) URL NorthAmerica : Europe : Asia (Singapore) : Asia (Taiwan) : Asia (HongKong) : Japan : For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 9134 Tel: <1> (408) Fax: <1>(408) Hitachi Europe GmbH Electronic components Group Dornacher Stra e 3 D-86 Feldkirchen, Munich Germany Tel: <49> (89) Fax: <49> (89) Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (168) 8000 Fax: <44> (168) 7783 Hitachi Asia Pte. Ltd. 16 Collyer Quay #0-00 Hitachi Tower Singapore Tel: 3-0 Fax: Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei () Tel: <886> () Fax: <886> () Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <8> () Fax: <8> () Telex: 4081 HITEC HX Copyright ' Hitachi, Ltd., All rights reserved. Printed in Japan.
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