NAND Flash Memory / NAND

Transcription

1 SEMICONDUCTOR GENERAL CATALOG 東芝半導体製品総覧表 2017 年 1 月版 Memory メモリ NAND Flash Memory /NAND 型フラッシュメモリ SCA0004I

2 NAND Flash Memory / NAND SLC Small Block / SLC 512 Mbits (max) (μs) ZTC58DVM92A5TA K to to 70 TSOP I 48-P ZTC58DVM92A5TAI K to to 85 TSOP I 48-P ZTC58DVM92A5BAJ K to to 85 P-TFBGA AZ SLC Large Block / SLC 1 Gbits 2 Gbits 4 Gbits 8 Gbits 16 Gbits 32 Gbits (max) (μs) ZTC58NVG0S3HTA K + 8K to to 70 TSOP I 48-P ZTC58NVG0S3HTAI K + 8K to to 85 TSOP I 48-P ZTC58NVG0S3HBAI K + 8K to to 85 P-VFBGA Z TC58NVG0S3HBAI K + 8K to to 85 P-TFBGA CZ ZTC58NVG1S3HTA K + 8K to to 70 TSOP I 48-P ZTC58NVG1S3HTAI K + 8K to to 85 TSOP I 48-P ZTC58NVG1S3HBAI K + 8K to to 85 P-VFBGA ZTC58NVG1S3HBAI K + 8K to to 85 P-TFBGA CZ Z TC58NVG2S0HTA K + 16K to to 70 TSOP I 48-P ZTC58NVG2S0HTAI K + 16K to to 85 TSOP I 48-P ZTC58NVG2S0HBAI K + 16K to to 85 P-VFBGA ZTC58NVG2S0HBAI K + 16K to to 85 P-TFBGA CZ ZTH58NVG3S0HTA K + 16K to to 70 TSOP I 48-P ZTH58NVG3S0HTAI K + 16K to to 85 TSOP I 48-P ZTH58NVG3S0HBAI K + 16K to to 85 P-VFBGA ZTH58NVG3S0HBAI K + 16K to to 85 P-TFBGA CZ ZTH58NVG4S0FTA K K to to 70 TSOP I 48-P C ZTH58NVG4S0FTAK K K to to 85 TSOP I 48-P C ZTH58NVG4S0FBAID K K to to 85 P-TFBGA ZTH58NVG4S0HTA K + 16K to to 70 TSOP I 48-P C ZTH58NVG4S0HTAK K + 16K to to 85 TSOP I 48-P C ZTH58NVG5S0FTA K K to to 70 TSOP I 48-P C ZTH58NVG5S0FTAK K K to to 85 TSOP I 48-P C The above flash memories in BGA packages are also available in 1.8-V versions. For details, contact your local sales representative. BGA 1.8 V 2

3 SLC Large / SLC (Legacy Interface) 32 Gbits 64 Gbits (max) (μs) Z TC58NVG5H2HTA M + 128K to to 70 TSOP I 48-P C Z TC58NVG5H2HTAI M + 128K to to 85 TSOP I 48-P C Z TH58NVG6H2HTA M + 128K to to 70 TSOP I 48-P C Z TH58NVG6H2HTAK M + 128K to to 85 TSOP I 48-P C Z TH58NVG7H2HTA M + 128K to to 70 TSOP I 48-P C 128 Gbits Z TH58NVG7H2HTAK M + 128K to to 85 TSOP I 48-P C (Toggle Interface) 64 Gbits Access Time Program/Erase Time (typ.) (max) (μs) Supply Z TH58TEG6H2HBA4C M + 128K 5 to to 3.6 Z TH58TEG6H2HBAMC M + 128K 5 to to 3.6 Z TH58TEG7H2HBA8C M + 128K 5 to to Gbits Z TH58TEG7H2HBASC M + 128K 5 to to 3.6 Z TH58TEG8H2HBA M + 128K 5 to to Gbits Z TH58TEG8H2HBAS M + 128K 5 to to 3.6 I/O Port Power Supply 0 to 70 P-TFBGA to 85 P-TFBGA to 70 P-TFBGA to 85 P-TFBGA to 70 P-FBGA BZ 40 to 85 P-FBGA BZ 3

4 BENAND TM BENAND (Built-in ECC NAND) is a family of flash memories with ECC functionality that provides a standard raw NAND flash interface. As is the case with traditional NAND flash memories, wear leveling and bad-block management are the responsibility of a host controller. However, BENAND removes the burden of ECC from the host controller, simplifying the use of advanced SLC NAND flash memories. BENAND Built-in ECC NAND ECC NAND NAND ECC SLC NAND (typ.) (μs) ZTC58BVG0S3HTA K + 4K to to 70 TSOP I 48-P Gbits ZTC58BVG0S3HTAI K + 4K to to 85 TSOP I 48-P ZTC58BVG0S3HBAI K + 4K to to 85 P-VFBGA Z TC58BVG0S3HBAI K + 4K to to 85 P-TFBGA CZ ZTC58BVG1S3HTA K + 4K to to 70 TSOP I 48-P Gbits ZTC58BVG1S3HTAI K + 4K to to 85 TSOP I 48-P ZTC58BVG1S3HBAI K + 4K to to 85 P-VFBGA ZTC58BVG1S3HBAI K + 4K to to 85 P-TFBGA CZ ZTC58BVG2S0HTA K + 8K to to 70 TSOP I 48-P Gbits ZTC58BVG2S0HTAI K + 8K to to 85 TSOP I 48-P ZTC58BVG2S0HBAI K + 8K to to 85 P-VFBGA ZTC58BVG2S0HBAI K + 8K to to 85 P-TFBGA CZ ZTH58BVG3S0HTA K + 8K to to 70 TSOP I 48-P Gbits ZTH58BVG3S0HTAI K + 8K to to 85 TSOP I 48-P ZTH58BVG3S0HBAI K + 8K to to 85 P-VFBGA ZTH58BVG3S0HBAI K + 8K to to 85 P-TFBGA CZ BENAND TM is a trademark of TOSHIBA CORPORATION. The above flash memories in BGA packages are also available in 1.8-V versions. For details, contact your local sales representative. BENAND BGA 1.8 V Serial Interface NAND Serial Interface NAND flash memories are compatible with Serial Peripheral Interface (SPI) that is commonly used as a general interface. Serial Interface NAND SLC NAND SPI Access Time Supply (min)(ns) TC58CVG0S3 HQAIE * K + 4K 2.7 to to 85 P-SOP Gbits TC58CVG0S3 HRAIG * K + 4K 2.7 to to 85 P-WSON TC58CYG0S3 HQAIE * K + 4K 40 to 85 P-SOP TC58CYG0S3 HRAIG * K + 4K 40 to 85 P-WSON TC58CVG1S3 HQAIE * K + 4K 2.7 to to 85 P-SOP Gbits TC58CVG1S3 HRAIG * K + 4K 2.7 to to 85 P-WSON TC58CYG1S3 HQAIE * K + 4K 40 to 85 P-SOP TC58CYG1S3 HRAIG * K + 4K 40 to 85 P-WSON TC58CVG2S0 HQAIE * K + 8K 2.7 to to 85 P-SOP Gbits TC58CVG2S0 HRAIG * K + 8K 2.7 to to 85 P-WSON TC58CYG2S0 HQAIE * K + 8K 40 to 85 P-SOP TC58CYG2S0 HRAIG * K + 8K 40 to 85 P-WSON *: New product / 4

5 e MMC TM e MMC TM is a family of NAND flash memories with control functionality such as ECC, wear leveling and bad-block management. e MMC TM also provides a high-speed memory card interface compliant with JEDEC/MMCA Version 5.0/5.1, eliminating the need for users to be concerned about directly controlling NAND flash memories. Thus, e MMC TM can easily be used as a storage device for embedded applications. NAND JEDEC/MMCA Ver. 5.0/5.1 NAND Class 4 GBytes 8 GBytes 16 GBytes 32 GBytes 64 GBytes e MMC Version Max Data Rate (MB/s) Supply VCC VCCQ Size (mm) Code THGBMDG5D1LBAIT Premium to 3.6, 2.7 to to x 10 x 0.8 P-WFBGA THGBMDG5D1LBAIL Premium to 3.6, 2.7 to to x 13 x 0.8 P-WFBGA THGBMHG6C1LBAIL Premium 5.1 (1) to 3.6, 2.7 to to x 13 x 0.8 P-WFBGA THGBMHG6C1LBAU6 Industrial 5.1 (1) to 3.6, 2.7 to to 105 (2) 11.5 x 13 x 0.8 P-WFBGA THGBMHG7C2LBAIL Supreme 5.1 (1) to 3.6, 2.7 to to x 13 x 0.8 P-WFBGA THGBMHG7C1LBAIL Premium 5.1 (1) to 3.6, 2.7 to to x 13 x 0.8 P-WFBGA THGBMHG7C2LBAU7 Industrial 5.1 (1) to 3.6, 2.7 to to 105 (2) 11.5 x 13 x 1.0 P-VFBGA THGBMHG8C4LBAIR Supreme 5.1 (1) to 3.6, 2.7 to to x 13 x 1.0 P-VFBGA THGBMHG8C2LBAIL Premium 5.1 (1) to 3.6, 2.7 to to x 13 x 0.8 P-WFBGA THGBMHG8C4LBAU7 Industrial 5.1 (1) to 3.6, 2.7 to to 105 (2) 11.5 x 13 x 1.0 P-VFBGA THGBMHG9C4LBAIR Supreme 5.1 (1) to 3.6, 2.7 to to x 13 x 1.0 P-VFBGA THGBMGG9U4 LBAIR Premium to 3.6, 2.7 to to x 13 x 1.0 P-VFBGA THGBMHG9C8LBAU8 Industrial 5.1 (1) to 3.6, 2.7 to to 105 (2) 11.5 x 13 x 1.2 P-TFBGA GBytes THGBMHT0C8LBAIG Supreme 5.1 (1) to 3.6, 2.7 to to x 13 x 1.2 P-TFBGA THGBMGT0U8 LBAIG Premium to 3.6, 2.7 to to x 13 x 1.2 P-TFBGA Note (1): Compliant with the optional command queuing feature and the secure write protection feature of JEDEC e MMC Ver 5.1 / e JEDEC e MMC TM Version 5.1 (2): Tc = 115 C max. MMC TM is a trademark of JEDEC/MMCA. Contact the Toshiba sales representative for sample schedule about products under development. Details about your intended usage would be checked before submitting samples of the industrial class product. e MMC JEDEC/MMCA Industrial UFS Toshiba s Flash memories with an integrated controller provide error correction, wear leveling, bad-block management, etc. They have an interface compliant with JEDEC/UFS Version 2.1, eliminating the need for users to perform NAND-specific control. This simplifies integration of Flash memory storage into embedded applications. NAND JEDEC/UFS Ver. 2.1 NAND UFS Max Data Rate Supply Version (MB/s) VCC VCCQ VCCQ2 Size (mm) Code 32 GBytes THGAF4G8N2LBAIR to 3.6 (1) 25 to x 13 x 1.0 P-VFBGA GBytes THGAF4G9N4LBAIR to 3.6 (1) 25 to x 13 x 1.0 P-VFBGA GBytes THGAF4T0N8LBAIR to 3.6 (1) 25 to x 13 x 1.0 P-VFBGA Note (1): This product supports dual-supply operation at VCC and VCCQ2. VCCQ need not be supplied. / VCC VCCQ2 2 VCCQ Contact the Toshiba sales representative for sample schedule about products under development. 5

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