Memory Selection Guide

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1 FLASH Network FCRAM SRAM NOR Flash Multi-Chip Packages Memory Selection Guide PSRAM NAND Flash Memory Cards

2 Toshiba offers one of the widest varieties of memory products of any semiconductor manufacturer. Based on the three core memory technologies: DRAM (dynamic random access memory), SRAM (static random access memory), and Flash, Toshiba probably has a solution that can meet your requirements. The memory products have been segmented into application specific areas: file memory for data storage needs, mobile memory for low power or space constrained applications, and high performance DRAM for high speed requirements. File Memory (Data Storage) CompactFlash FLASH NAND SD Mobile Memory (Handheld and Wireless) DRAM FLASH PSRAM NOR Multi-Chip Packages SRAM Low Power Asynchronous High Performance DRAM (High Speed) DRAM FCRAM XDR

3 File Memory Products NAND flash is highest density non-volatile memory available today. Typically used in mass storage applications such as memory cards, USB drives, and solid-state storage systems. Low voltage NAND and BGA packages are also available. NAND Flash Part Number Density Process Pkg-Pins Vdd Status *1 Comments TC58DVM72A1FT00 128Mb 0.13µm FT MP Not for new designs TC58DVM72A1FTI0 128Mb 0.13µm FT MP I temp, not for new designs TC58DVM82A1FT00 256Mb 0.13µm FT MP Small block *2 TC58DVM82A1FTI0 256Mb 0.13µm FT MP I temp, small block *2 TC58DVM92A1FT00 512Mb 0.13µm FT MP Small block *2 TC58DVM92A1FTI0 512Mb 0.13µm FT MP I temp, small block *2 TC58DVG02A1FT00 1Gb 0.13µm FT MP Small block *2 TC58DVG02A1FTI0 1Gb 0.13µm FT MP I temp, small block *2 TC58NVG0S3AFT05 1Gb 0.13µm FT MP Large block TC58NVG0S3AFTI5 1Gb 0.13µm FT MP I temp, large block TC58NVG0S3BFT00 1Gb 90nm FT CS Large block TH58NVG1S3AFT05 2Gb 0.13µm FT MP Large block TC58NVG1S3BFT00 2Gb 90nm FT CS Large block TH58NVG2S3BFT00 4Gb 90nm FT CS Large block *1 Please call for latest status (CS=customer samples,mp=mass production, EOL=end of life) *2 Large block NAND recommended for all new designs. CompactFlash is a small form-factor memory card commonly found in consumer products such as digital cameras, and increasingly used in embedded applications as a solid state disk drive because it recognizes standard ATA commands like an IDE disk drive and has a True IDE mode. CompactFlash TM Part Number Capacity Status *1 Technology Comments THNCF128MMG 128MB MP MLC Standard, lead-free THNCF128MDG 128MB MP SLC Premium, lead-free THNCF128MDGI 128MB MP SLC Premium, I temp., lead-free THNCF256MMG 256MB MP MLC Standard, lead-free THNCF256MDG 256MB MP SLC Premium, lead-free THNCF256MDGI 256MB MP SLC Premium, I temp., lead-free THNCF512MMG 512MB MP MLC Standard, lead-free THNCF512MDG 512MB MP SLC Premium, lead-free THNCF512MDGI 512MB MP SLC Premium, I temp., lead-free THNCF1G02MG 1GB MP MLC Standard, lead-free THNCF1G02DG 1GB MP SLC Premium, lead-free THNCF1G02DGI 1GB MP SLC Premium, I temp., lead-free *1 Please call for latest status (CS=customer samples,mp=mass production, EOL=end of life) For embedded or industrial applications, the SLC-based CF cards is recommended.

4 The SD (Secure Digital) card is the world s most popular memory card. It has been designed into a vast array of consumer products and the number of products continues to grow. To ensure compatibility, product manufacturers must be members of the SD Association ( in order to get SD card specifications and market SD products. SD Card TM Part Number Capacity Status *1 Comments SD-M MB MP Standard (blue) SD-M MB MP Standard (blue) SD-F MB MP High Performance (white) SD-M MB MP Standard (blue) SD-F MB MP High Performance (white) SD-M MB MP Standard (blue) SD-F MB MP High Performance (white) SD-M01GS 1GB MP Standard (blue) *1 Please call for latest status (MP=mass production,eol=end of life)

5 Mobile Memory Products PSRAMs (Pseudo Static RAM) are typically used in low power SRAM applications where high density is important. They are basically low power DRAMs with an SRAM interface and include self refresh circuitry. PSRAM Part Number Density Process Org. Vdd Pkg-Pins Status *1 Comments TC51WHM516AXBN 32Mbit 0.175µm 2Mx BGA(6x7) MP TC51WKM516AXBN 32Mbit 0.175µm 2Mx BGA(6x7) MP TC51WHM616AXBN 64Mbit 0.175µm 4Mx BGA(8x11) MP TC51WKM616AXBN 64Mbit 0.175µm 4Mx BGA(8x11) MP TC51WHM716AXBN 128Mbit 0.175µm 8Mx BGA(9x12) MP TC51YNM716AXBN 128Mbit 0.175µm 8Mx BGA(9x12) CS *1 Please call for latest status (CS=customer samples,mp=mass production,eol=end of life) SRAM SRAMs continue to be used in variety of applications. These are low power asynchronous SRAMs designed for 1.8V, 3V, and 5V applications. Part Number Density Process Org. Pkg-Pins Vdd Status *1 Comments TC55NEM208AFPN 4Mbit 0.15µm 512Kx8 SOP-32 5 ES TC55NEM208AFPV 4Mbit 0.15µm 512Kx8 SOP ES TC55NEM208AFTN 4Mbit 0.15µm 512Kx8 TSOP ES TC55NEM208ATGN 4Mbit 0.15µm 512Kx8 TSOP ES lead-free TC55NEM208AFTV 4Mbit 0.15µm 512Kx8 TSOP ES TC55NEM208ATGV 4Mbit 0.15µm 512Kx8 TSOP ES lead-free TC55VEM208ASTN 4Mbit 0.15µm 512Kx8 TSOP MP TC55VCM208ASTN 4Mbit 0.15µm 512Kx8 TSOP MP TC55NEM216ASTV 4Mbit 0.15µm 256Kx16 TSOP ES TC55NEM216ASGV 4Mbit 0.15µm 256Kx16 TSOP ES lead-free TC55NEM216AFTN 4Mbit 0.15µm 256Kx16 TSOP ES TC55NEM216ATGN 4Mbit 0.15µm 256Kx16 TSOP ES lead-free TC55NEM216AFTV 4Mbit 0.15µm 256Kx16 TSOP ES TC55NEM216ATGV 4Mbit 0.15µm 256Kx16 TSOP ES lead-free TC55VCM216ASTN 4Mbit 0.15µm 256Kx16 TSOP MP TC55VEM216ABXN 4Mbit 0.15µm 256Kx16 BGA(6.5x8) 3 MP TC55YEM216ABXN 4Mbit 0.15µm 256Kx16 BGA(6.5x8) 1.8 MP TC55VBM316AFTN 8Mbit 0.15µm 512Kx16/1Mx8 TSOP MP TC55VBM316ASTN 8Mbit 0.15µm 512Kx16/1Mx8 TSOP MP TC55VEM316AXGN 8Mbit 0.15µm 512Kx16 BGA(8x11) 3 MP lead-free TC55YEM316AXGN 8Mbit 0.15µm 512Kx16 BGA(8x11) 1.8 CS lead-free TC55VBM416AFTN 16Mbit 0.15µm 1Mx16/2Mx8 TSOP MP TC55VEM416AXGN 16Mbit 0.15µm 1Mx16 BGA(8x11) 3 MP lead-free TC55YEM416AXGN 16Mbit 0.15µm 1Mx16 BGA(8x11) 1.8 CS lead-free *1 Please call for latest status (CS=customer samples,mp=mass production,eol=end of life)

6 NOR flash is typically used in lower density code-storage applications instead of NAND flash. Toshiba NOR flash is compatible with the AMD command set and algorithms. NOR Flash Part Number Density Process Org. Pkg-Pins Vdd Status *1 Comments TC58FVB160AFT 16Mb 0.2µm 2Mx8/1Mx16 TSOP MP Bottom boot,i temp TC58FVT160AFT 16Mb 0.2µm 2Mx8/1Mx16 TSOP MP Top boot,i temp TC58FVB160AXB 16Mb 0.2µm 2Mx8/1Mx16 BGA (6x8) MP Bottom boot,i temp TC58FVT160AXB 16Mb 0.2µm 2Mx8/1Mx16 TSOP MP Top boot,i temp TC58FVM5B2ATG 32Mb 0.16µm 4Mx8/2Mx16 TSOP MP Bottom boot,i temp,rww,pm,lf TC58FVM5T2ATG 32Mb 0.16µm 4Mx8/2Mx16 TSOP MP Top boot,i temp,rww,pm,lf TC58FVM5B2AXB 32Mb 0.16µm 4Mx8/2Mx16 BGA MP Bottom boot,i temp,rww,pm TC58FVM5T2AXB 32Mb 0.16µm 4Mx8/2Mx16 BGA MP Top boot,i temp,rww,pm TC58FVM6B2ATG 64Mb 0.16µm 8Mx8/4Mx16 TSOP MP Bottom boot,i temp,rww,pm,lf TC58FVM6T2ATG 64Mb 0.16µm 8Mx8/4Mx16 TSOP MP Top boot,i temp,rww,pm,lf TC58FVM6B2AXB 64Mb 0.16µm 8Mx8/4Mx16 BGA MP Bottom boot,i temp,rww,pm TC58FVM6T2AXB 64Mb 0.16µm 8Mx8/4Mx16 BGA MP Top boot,i temp,rww,pm TC58FVM7B2ATG 128Mb 0.16µm 16Mx8/8Mx16 TSOP MP Bottom boot,i temp,rww,pm,lf TC58FVM7T2ATG 128Mb 0.16µm 16Mx8/8Mx16 TSOP MP Top boot,i temp,rww,pm,lf TC58FVM7B2AXB 128Mb 0.16µm 16Mx8/8Mx16 BGA(8x10) MP Bottom boot,i temp,rww,pm TC58FVM7T2AXB 128Mb 0.16µm 16Mx8/8Mx16 BGA(8x10) MP Top boot,i temp,rww,pm TC58FVM7B4BXG 128Mb 0.13µm 16Mx8/8Mx16 BGA(8x10) 1.8 CS Bottom boot,i temp,rww,pm,bm,lf TC58FVM7T4BXG 128Mb 0.13µm 16Mx8/8Mx16 BGA(8x10) 1.8 CS Top boot,i temp,rww,pm,bm,lf TC58FYM7B4BXG 128Mb 0.13µm 16Mx8/8Mx16 BGA(8x10) 1.8 CS Bottom boot,i temp,rww,pm,bm,lf TC58FYM7T4BXG 128Mb 0.13µm 16Mx8/8Mx16 BGA(8x10) 1.8 CS Top boot,i temp,rww,pm,bm,lf TC58FVM7B5BTG 128Mb 0.13µm 16Mx8/8Mx16 TSOP CS Bottom boot,i temp,rww,pm,lf TC58FVM7T5BTG 128Mb 0.13µm 16Mx8/8Mx16 TSOP CS Top boot,i temp,rww,pm,lf TC58FVM7B5BXG 128Mb 0.13µm 16Mx8/8Mx16 BGA(8x10) CS Bottom boot,i temp,rww,pm,lf TC58FVM7T5BXG 128Mb 0.13µm 16Mx8/8Mx16 BGA(8x10) CS Top boot,i temp,rww,pm,lf *1 Please call for latest status (CS=customer samples,mp=mass production,eol=end of life) (RWW-read while write, PM-page mode, BM-burst mode, LF-lead-free) MCPs (multi-chip package) are chip scale packages (CSPs) that combine multiple dies in one package. Toshiba is one of the largest MCP manufacturers in the world. MCPs are semi-custom products combining 2 or more of the following: low power SRAM, low power DRAM, PSRAM, NOR flash, and NAND flash. Please contact marketing for further information.

7 High Performance DRAM Products Network FCRAM (fast cycle RAM) is a type of DRAM optimized for low random access latency. It is targeted toward networking and very high performance computer applications. Typical DDR DRAM has a random access latency of 50-60ns while Network FCRAM has a random access latency of 20-25ns. Samsung markets this product as Network DRAM and is spec compatible. FCRAM TM Part Number Density Process Org. Pkg-Pins Status *1 Features TC59LM806CFT 256Mb 0.175µm 32Mx8 TSOP2-66 MP SSTL_2,FCRAM 1 TC59LM814CFT 256Mb 0.175µm 16Mx16 TSOP2-66 MP SSTL_2,FCRAM 1 TC59LM818DMB 288Mb 0.13µm 16Mx18 BGA(9x17) MP SSTL_18,HSTL,FCRAM 2 TC59LM836DKB 288Mb 0.13µm 8Mx36 BGA(11x19) MP SSTL_18,HSTL,FCRAM 2 TC59LM905AMB 512Mb 0.13µm 64Mx8 BGA(13x17) SSTL_2,FCRAM 1 TC59LM905AMG 512Mb 0.13µm 64Mx8 BGA(13x17) leadfree,sstl_2,fcram 1 TC59LM906AMG 512Mb 0.13µm 64Mx8 BGA(13x17) MP leadfree,sstl_18,hstl,fcram 1 TC59LM913AMB 512Mb 0.13µm 32Mx16 BGA(13x17) MP SSTL_2,FCRAM 1 TC59LM913AMG 512Mb 0.13µm 32Mx16 BGA(13x17) MP leadfree,sstl_2,fcram 1 TC59LM914AMG 512Mb 0.13µm 32Mx16 BGA(13x17) leadfree,sstl_18,hstl,fcram 1 *1 Please call for latest status (CS=customer samples,mp=mass production,eol=end of life) 576Mb FCRAM 2/2+ is under development and introduction will be in XDR (Xtreme Data Rate) DRAM is the next generation of DRAM designed by Rambus. The XDR DRAM has the highest bandwidth of any DRAM today and is targeted toward consumer graphic and video applications. Engineering samples have been developed, but the first commercial product will be a 256Mb device with engineering samples in Q Please contact marketing for the latest information.

8 Resources For datasheets and application notes, please visit us at:

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