Comparing Toshiba TC58NVG0S3Exxxx with Macronix MX30LF1G08AA

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1. Introduction Comparing Toshiba TC58NVG0S3Exxxx with Macronix MX30LF1G08AA APPLICATION NOTE This application note is to compare the Toshiba TC58NVG0S3Exxxx with Macronix MX30LF1G08AA, 3V 1Gb SLC NAND Flash. The document does not provide detailed information on the individual devices, but highlights the similarities and differences between them. The comparison covers the general features, performance, command codes and other differences. The information provided is based on the data available at the time the document was released. The Toshiba TC58NVG0S3Exxxx and Macronix MX30LF1G08AA datasheets may override this application note if there is a different description for the same specification in the datasheets. 2. General Feature Comparison The table below compares the general features of the two NAND devices. Basically, the main features are the same except for some differences which are highlighted in yellow. Part Name TC58NVG0S3Exxxx MX30LF1G08AA Voltage 2.7V-3.6V 2.7V-3.6V Bus Width x8 x8 Operating Temperature -40 C to 85 C -40 C to 85 C Memory Cell Array (128M+4M) x 8bit (128M+4M) x 8bit Page Size (2K+64)B (2K+ 64)B Block Size (128K +4K)B (128K+4K)B Cache Read/Program (2K+64)B (2K+64)B Two Plane Read/Program Yes No Page Copy Yes No ECC 1b/512B 1b/528B Data Retention Not Specified 10Y Endurance Not Specified 100K Package 48TSOP (12x20mm) 63-TFBGA (9x11mm) 48TSOP (12x20mm) 63-VFBGA (9x11mm) Publication Number: AN161V3 1

3. Main Performance Comparison There are some minor performance differences between the two devices. The system might need to consider the following parameter tolerances while using both devices. Performance Min. Typ. Max. Min. Typ. Max. Access Time Program Time Random 25us 25us Sequential 25ns 30ns Page Program 300us 700us 250us 700us Cache Program 700us 4us 700us Erase Time Block 2.5ms 10ms 2ms 3ms Power Consumption Standby (TTL) N/A 1mA Standby (CMOS) 50uA 10uA 50uA Active Read 30mA 15mA 30mA Active Write 30mA 15mA 30mA Input Leakage ± 10uA ± 10uA Output Leakage ± 10uA ± 10uA Partial PGM Cycle 4 cycles 4 cycles Publication Number: AN161V3 2

4. Command Set Comparison The differences are highlighted in yellow in the table below. Command 1st cmd cycle 2nd cmd cycle 1st cmd cycle 2nd cmd cycle READ page 00h 30h 00h 30h Read ID 90h - 90h - Reset FFh - FFh - Page Program 80h 10h 80h 10h Block Erase 60h D0h 60h D0h Read Status Register 70h - 70h - Serial Data Input (*redundant, has already been combined with other 80h - - - command) Random Data Input 85h - 85h - Random Read Data Output 05h E0h 05h E0h Cache Program 80h 15h 80h 15h Cache Read Start 31h - 00h 31h Cache Read Exit 3Fh - 34h - Multi-plane Page Program Read for Page Copy (2) with Data Out Auto Program with Data Cache during Page Copy (2) Auto Program for Last Page during Page Copy (2) Status Read for Multi-Page Program or Multi Block Erase 80h 11h - - 81h 15h - - 81h 10h - - 00h 3Ah - - 8Ch 15h - - 8Ch 10h - - 71h - - - Publication Number: AN161V3 3

5. Status Register Comparison The main key register bits are compatible. However, the TC58NVG0S3E provides additional status register bits (read with the 71h command) to indicate the two-plane operation status, which the MX30LF1G08AA does not support and is not specified in this article. SR[0] Program/Erase pass or fail Program/Erase pass or fail SR[1] Cache program pass or fail Cache program pass or fail SR[2] Not Used Not Used SR[3] Not Used Not Used SR[4] Not Used Not Used SR[5] Ready/Busy Ready/Busy for internal controller operation SR[6] Data Cache Ready/Busy Ready/Busy SR[7] Write Protect Write Protect 6. Package Pin/Ball Definition Comparison The physical dimensions are similar to each other. For detailed information, please refer to the individual datasheets. The table below shows that only 1 pin/ball definition is different between the devices. DNU means Do Not Use in the Macronix pin/ball definition, and the pin/ball should not be connected to any signal or power trace on the board. The functions of the TC58NVG0S3E and MX30LF1G08AA I/O pins are the same but their naming is different. The TC58NVG0S3E has its I/O pins named IO1 to IO8. Whereas the MX30LF1G08AA has its I/O pins named IO0 to IO7. TSOP #35 pin NC DNU FBGA #G3 NC DNU Publication Number: AN161V3 4

7. Device Identification Comparison The lengths of the device ID for the TC58NVG0S3E and MX30LF1G08AA differ by one byte. The ID of the Toshiba TC58NVG0S3E begins with a one-byte manufacturer code followed by a four-byte device ID. The ID of the Macronix MX30LF1G08AA begins with a one-byte manufacturer code followed by a three-byte device ID. See the table below. Device ID x8 98h / D1h / (See Note) C2h / F1h / 80h / 1Dh 1st byte Manufacturer code Manufacturer code 2nd byte Device ID Device ID bit 1-0 Die number Die number bit 3-2 Cell Structure Cell Structure 3rd byte bit 5-4 not defined Number of concurrently programmed pages bit 6 not defined Interleaved programming between diverse devices bit 7 not defined Cache program Device ID Definition bit 1-0 Page size Page size bit 2 not defined Size of spare area 4th byte bit 7, 3 not defined Sequential Read Cycle Time bit 5-4 Block Size (exclude spare area) Block Size (exclude spare area) bit 6 not defined Organization bit 1-0 not defined N/A 5th byte bit 3-2 Plane Number N/A bit 6-4 not defined N/A bit 7 not defined N/A Note: The 3rd to 5th bytes of Toshiba ID do not specify a certain value. Publication Number: AN161V3 5

8. Summary The Macronix MX30LF1G08AA is highly compatible with the Toshiba TC58NVG0S3E device, but the two devices have some specification differences. Please refer to the individual datasheets for details. 9. References The following datasheets were used for preparing this comparison note: Datasheet Location Date Issued Version MX30LF1G08AA Macronix Website Sept. 2014 1.5 TC58NVG0S3ETA00 Website Mar. 2011 1.08 TC58NVG0S3EBAI4 Website Mar. 2011 1.60 For more functional and parametric specifications, please refer to the datasheet on the Macronix Website at http://www.macronix.com/ and go to: Products/ NAND Flash/ SLC NAND. 10. Revision History Revision No. Description Page Date REV. 1 Initial Release ALL May 23, 2012 REV. 2 1. Typo corrections 2. Updated datasheet version 5 6 May 15, 2014 REV. 3 Title modifications 1 Apr. 18, 2016 Publication Number: AN161V3 6

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