SD Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-0FM. Base. Collector. Emitter. kω (Typ)
SD Absolute Maximum Ratings (Ta = C) Item Symbol Rating Unit Collector to base V CBO 60 V Collector to emitter V CEO 60 V Emitter to base V EBO 7 V Collector current I C 8 A Collector peak current I C(peak) A Collector power dissipation P C W P C * Junction temperature Tj 0 C Storage temperature Tstg to +0 C Note:. Value at T C = C. Electrical Characteristics (Ta = C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V (BR)CBO 60 V I C. ma, I E Collector to emitter breakdown Emitter to base breakdown V (BR)CEO 60 V I C = ma, R BE = V (BR)EBO 7 V I E ma, I C Collector cutoff current I CBO µa V CB V, I E I CEO V CE V, R BE = DC current transfer ratio h FE 00 0000 V CE = V, I C = 4 A* Collector to emitter saturation V CE(sat). V I C = 4 A, I B = 8 ma* I CE(sat).0 I C = 8 A, I B = 80 ma* Base to emitter saturation V BE(sat).0 V I C = 4 A, I B = 8 ma* V BE(sat). I C = 8 A, I B = 80 ma* Note:. Pulse test. See switching characteristic curve of SD7.
SD 0 Maximum Collector Dissipation Curve Collector power dissipation Pc (W) 0 0 0 0 0 Case temperature T C ( C) 0.0 0. i C (peak) I C (max) Area of Safe Operation DC Operation (T C = C) PW = ms 0. Ta = C shot pulse 0.0 0..0 0 0 00 Collector to emitter V CE (V) µs 0 µs Typical Output Characteristics. 4. T C = C 0. ma I B 0 4 Collector to emitter V CE (V) DC current transfer ratio h FE,000,000,000,000 00 00 V CE = V DC Current Transfer Ratio vs. Collector Current T C = 7 C C C 0 0. 0. 0..0
SD Collector to emitter saturation V CE (sat) (V) Base to emitter saturation V BE (sat) (V) Saturation Voltage vs. Collector Current.0 0. 0. V BE (sat) V CE (sat) 00 00 l C /l B 0 T C = C 0. 0. 0. 0..0 Transient Thermal Resistance Thermal resistance θ j-c ( C/W) TC = C.0 0. 0. m m 0m.0 0 00 Time t (s) 4
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