Spansion* Flash Memory to Numonyx StrataFlash Wireless Memory (L) Migration Guide Application Note #309205

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* Flash Memory to Numonyx StrataFlash Wireless Memory (L) Migration Guide Application Note #309205 309205-01

INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH NUMONYX PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY NumonyxLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN NUMONYX'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, NUMONYX ASSUMES NO LIABILITY WHATSOEVER, AND NUMONYX DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY, RELATING TO SALE AND/OR USE OF NUMONYX PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER NumonyxLECTUAL PROPERTY RIGHT. Numonyx products are not intended for use in medical, life saving, life sustaining, critical control or safety systems, or in nuclear facility applications. Numonyx B.V. may make changes to specifications and product descriptions at any time, without notice. Numonyx B.V. may have patents or pending patent applications, trademarks, copyrights, or other Numonyxlectual property rights that relate to the presented subject matter. The furnishing of documents and other materials and information does not provide any license, express or implied, by estoppel or otherwise, to any such patents, trademarks, copyrights, or other Numonyxlectual property rights. Designers must not rely on the absence or characteristics of any features or instructions marked reserved or undefined. Numonyx reserves these for future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them. Contact your local Numonyx sales office or your distributor to obtain the latest specifications and before placing your product order. Copies of documents which have an order number and are referenced in this document, or other Numonyx literature may be obtained by visiting the Numonyx website at http://www.numonyx.com. Numonyx, the Numonyx logo, and StrataFlash are trademarks or registered trademarks of Numonyx B.V. or its subsidiaries in other countries. *Other names and brands may be claimed as the property of others. Copyright 2009, Numonyx B.V., All Rights Reserved. Migration Guide February 2009 2 309205-01

Contents 1.0 Introduction...5 2.0 Differences Between Flash Memory Devices...6 2.1 Features...6 2.2 Performance and Block Size Comparisons...7 2.3 Device Identifiers...7 2.4 Device Command Codes...8 3.0 Register... 10 4.0 Configuration Registers... 11 5.0 Software Considerations... 12 5.1 Numonyx FDI... 13 6.0 Summary... 14 February 2009 Migration Guide 309205-01 3

Revision History Date of Revision Revision Description February 2009 01 Initial Release Migration Guide February 2009 4 309205-01

1.0 Introduction A system design can migrate from a * S29xxxxxR/S71xxxxxR and S72xxxxxR (R- 65nm devices) flash memory device, to a Numonyx Wireless flash memory L Family device. This migration has negligible impact on system performance. This application note provides the following information about migrating from a to a Numonyx L flash memory device: Compares the features and performance of family of devices to Numonyx L family. Differences between the Numonyx L flash memory device and the flash memory device. Software Considerations. Before you use this document, become familiar with the Numonyx L wireless flash memory and the Flash memory devices, as described in the datasheets for each device. The Numonyx LR Flash device is a 1.8V device Vs. the Numonyx LT device is a 3V device. Note: This application note is based on information available at the time of publication, for the Numonyx Wireless Flash Memory (L) and the * S29xxxxxR,S71xxxxxR and S72xxxxxR flash memory devices. This application note might not reflect changes in specifications to either device. Refer to the appropriate documents from the respective manufacturer for the most current information about each device, before finalizing any design. February 2009 Migration Guide Order Number: 309205-01 5

2.0 Differences Between Flash Memory Devices 2.1 Features This section describes key differences between the Numonyx L and the Flash memory devices. Table 1 compares the feature sets for the Numonyx L and the Flash memory devices. Table 1: Feature Comparison for Flash Memory Devices Program Erase Feature Type Numonyx Wireless Flash Memory(L) * Flash Memory Word Program Buffered Program Unlock Bypass Program X Block Erase Chip Erase X Suspend Program/Erase Suspend Block Locking/ Unlocking Lock Block Unlock Block Lock-down Block X Fast Write Simultaneous Read While Write Fast Read Burst Interface ADMUX Non MUX Migration Guide February 2009 6 Order Number: 309205-01

2.2 Performance and Block Size Comparisons Table 2: Performance Comparison Between the * Family and Numonyx L Family of Devices Flash Memory Function Family Numonyx L Family L18 Devices LR Devices LT Devices Program 2.4usec/byte 0.42usec/byte 1.25usec/byte 1.25usec/byte Read Speed 104MHz 110MHz/83MHz 66MHz/54MHz 52MHz Block Erase 0.8sec/block 0.8sec/block 1.5sec/block 1.5sec/block Max Synch Latency/ Initial Synch Access Time 75ns 100ns 70/85ns 85ns Read Access Times Current Consumption (typical values) Max Synch Burst Access/ CLK to output valid Max Asynch Access Time/ Initial Asynch Access Time Max OE# Access Time/ OE# low to output valid Cont. Burst Read 7.6nx 2.3 Device Identifiers 6ns @ 110MHz 9ns @ 83MHz Each flash memory device has a manufacturer ID. To retrieve the manufacturer ID, read address 00h after issuing a Read Device Identifier command on Numonyx flash memory devices, or after an Autoselect command on flash memory devices. Table 3 shows the manufacturer ID codes for Numonyx and flash memory devices. 14ns 17ns 80ns 100ns 70/85ns 85ns 15ns 20ns 20ns 25ns 32mA @104MHz 30mA @110MHz 26mA @83MHz 30mA @66MHz 28mA @54MHz 23mA @52MHz Program/Erase 20mA 36.5mA 20mA 8mA Standby Mode 20uA 50uA 70uA 25uA Block/Sector Size(Main Block) 128Kbytes 128Kbytes 128Kbytes 128Kbytes Block/Sector Size(Parameter Block) 32Kbytes 32Kbytes (N/A for 512M) 32Kbytes 32Kbytes Table 3: Manufacturer ID Codes Manufacturer Numonyx(L Devices) Numonyx(LR/LT Devices) Identifier 89h 20h 01h Each flash memory device is uniquely defined using a device ID. Similar to retrieving the manufacturer ID codes, the device ID is also read at address 01h after issuing the Read Device Identifier or the Autoselect command. Table 4 and Table 5 list the device ID codes for the Numonyx L and the R - 65nm devices. February 2009 Migration Guide Order Number: 309205-01 7

Note: Table 4: Three read cycles (or device ID codes) are required to successfully identify a flash memory device; the three device ID codes are read at addresses 01h, 0Eh, and 0Fh. Device ID Codes, Numonyx Strataflash Wireless Memory (L) Device Type Device Density Identifier (ADMUX) Identifier (Non MUX) 128-Mbit(Top) 882Eh 88C4h LR LT L 128-Mbit(Bottom) 882Fh 88C5h 256-Mbit(Top) 881Ch 880Dh 256-Mbit(Bottom 881Dh 880Eh 128-Mbit(Top) N/A 88C4h 128-Mbit(Bottom) N/A 88C5h 256-Mbit(Top) 8981h 8987h 256-Mbit(Bottom) 8985h 8989h 512-Mbit(Symmetrical) 8982h 898Ah Table 5: Device ID Codes, * Flash Memory (R - 65nm devices) Device Type Device Density Identifier Cycle 1 Cycle 2 Cycle 3 128-Mbit 3A7Eh 3A35h 3A03h NS R WS-R VS/XS-R 256-Mbit 397Eh 3917h 3903h 512-Mbit 387Eh 3816h 3803h 1-Gbit 377Eh 3715h 3703h 128-Mbit 007Eh 0027h 0003h 256-Mbit 007Eh 0026h 0003h 512-Mbit 007Eh 0025h 0003h 1-Gbit 007Eh 0024h 0003h 128-Mbit 007Eh 256-M bit 007Eh 0063h/Top 0065h/Bottom 0064h/Top 0066h/Bottom 0001h 0001h 2.4 Device Command Codes The command codes between the Numonyx and the flash memory devices also differ. Table 6 lists the command codes for the common flash memory functions on both devices. Migration Guide February 2009 8 Order Number: 309205-01

Table 6: Comparison of Numonyx and Command Sets Command Sequence Device Bus Cycles First Second Third Fourth Addr Data Addr Data Addr Data Addr Data Read Array Numonyx XX FF RA RD Read ID Program Buffered Program Block Erase Chip Erase Lock Block Unlock Block Lockdown Block Erase Suspend Program Suspend Erase Resume Program Resume Numonyx XX 90 IA ID X55 90 Numonyx WA 40/10 WA WD 555 AAA Notes: 1. All numbers shown are in hexadecimal representation. 2. XX = Any valid address within the flash memory device. IA = Identification code address offset. RA = Address of the location to be read 25 2AA 554 Numonyx WA E8 WA N-1 555 AAA 25 2AA 554 Numonyx BA 20 BA D0 Numonyx 555 AAA N/A 555 AAA 80 80 2AA 554 2AA 554 Numonyx BA 60 BA 01 555 AAA 60 2AA 554 Numonyx BA 60 BA D0 555 AAA 60 2AA 554 Numonyx BA 60 BA 2F N/A Numonyx XX B0 XXX B0 Numonyx XX B0 XXX 51 Numonyx XX D0 000 30 Numonyx XX D0 000 50 WC PA PD PA PD WC PA PD PA PD 30 10 60 SLA 60 60 SLA 60 February 2009 Migration Guide Order Number: 309205-01 9

RD = Read Data from location RA during read operation RR = Read Register value ID = Identifier data. WA = Word address of the memory location where data is written. WD = Word data. WC = Word count. BA = Address within the block. N = Word Count of the data to be loaded into the write buffer. Migration Guide February 2009 10 Order Number: 309205-01

3.0 Register The Numonyx L family devices have exactly the same status register bits with the exception of status register bit 3. Table 7 Register Bits Comparison below compares the status register bits for Vs. Numonyx devices. Table 7: Register Bits Comparison SR Bit 7 6 5 4 3 2 1 0 SR Device Ready Erase Suspend Erase Program RFU 1 Program Suspend Sector/ Block Lock Bank/ Partition Numonyx L & LR/LT Families SR Device Ready Erase Suspend Erase Program Program/ Erase Voltage Error Program Suspend Sector/ Block Lock Bank/ Partition 1. SR bit 3 is RFU on Devices and For Numonyx L family Bit3 represents VPPS and indicates the value of Vpp Voltage. If VPPS = 0, the Vpp voltage value is within acceptable limits of program and erase operations. If VPPS = 1, the Vpp voltage is less than Vpplk during program/erase operation. February 2009 Migration Guide Order Number: 309205-01 11

4.0 Configuration Registers The Configuration Registers are very similar for and Numonyx L family for all bits except bit 7 and bit 3. The CR Bit 7 is output drive strength bit on devices and is a reserved bit on the L devices whereas the CR Bit 3 is reserved on devices and is a Burst Wrap bit on L devices. The Configuration Register has bits 14,9,7,6 and 3 different on the LR/LT family devices as against devices. Table 8 Configuration Register Bits Comparison below compares the different configuration registers between and Numonyx L Family devices. Table 8: Configuration Register Bits Comparison SR Bit 15 14 13-11 10 9 8 7 6 5-4 3 2-0 CR Synch/ Asynch Read Mode Read Wait States/ Latency Count RDY/ WAIT Polarity Reserved RDY/ WAIT Timing 1 Output Drive Strength Reserved Burst Length Numonyx L Family RCR Synch/ Asynch Read Mode Read Wait States/ Latency Count RDY/ WAIT Polarity Reserved RDY/ WAIT Timing Reserved Burst Wrap Burst Length Numonyx LR/LT Families RCR Synch/ Asynch Read Mode Reserved Read Wait States/ Latency Count RDY/ WAIT Polarity Data Out Configurat ion RDY/ WAIT Timing Burst Type Valid Clock Edge Reserved Burst Wrap Burst Length 1. For Devices, CR Bit 8 = 0 means RDY is active one clock cycle before valid data and CR Bit 8 = 1 means RDY is active with valid data whereas for Numonyx devices, CR Bit 8 = 0 means WAIT is active with valid data and CR Bit 8 = 1 means WAIT is active one clock cycle before valid data Migration Guide February 2009 12 Order Number: 309205-01

5.0 Software Considerations There are several considerations for migrating to Numonyx StrataFlash Wireless Memory (L Family). In this case the block sizes and core functionality are the same so the migration effort is focused on a few changes. Typically the software interface with the flash device is isolated to a low level flash driver. In most cases, the flash driver currently used can be replaced with a Numonyx driver for StrataFlash Wireless Memory. This driver can be downloaded from www.numonyx.com, and provides software functions to interface with the flash. In the case that existing software needs to be modified and the Numonyx driver can not be used, there are only a few isolated changes that need to be made, which are as follows: If the manufacturer and device identifier codes are used to identify the device, the software should be updated to utilize the identifiers for Numonyx. There are two updates needed for this. The first is the command sequence issued to the device should be changed (see Table 6. Comparison of Numonyx and Command Sets). The second change required is to add the resulting values for Numonyx devices (Table 4. Device ID Codes, Numonyx Strataflash Wireless Memory (L), Table 5. Device ID Codes, * Flash Memory (R - 65nm devices)). The flash interface functions used in the software should be updated to use the Numonyx command sequence. This requires updating the commands issued to the flash with Numonyx command sequences (see Table 6. Comparison of Numonyx and Command Sets). The Numonyx device does not have a command comparable to the Chip erase command. This can be replaced with a small section of code that indexes through each block and erases them. The TMPL_EraseAllBlocks function found in the driver available from www.numonyx.com can be used as a sample. In addition to providing drivers, Numonyx also provides complete file systems. Numonyx Flash Data Integrator (Numonyx FDI) is a Numonyx supported code, data, and file manager for use in real-time embedded applications. The Numonyx FDI Data Manager component provides a simple storage API. The Data Manager also includes a high-performance interface for streaming data in voice recording and multimedia applications, as well as packet-size data. The Numonyx FDI Code Manager component allows for direct execution of code, including Java* applets and native CPU software. The Numonyx FDI File Manager component presents a user-friendly POSIXstyle interface for software developers, streamlining the development of data-centric applications. February 2009 Migration Guide Order Number: 309205-01 13

5.1 Numonyx FDI Numonyx FDI is founded upon robust power-loss recovery mechanisms, which ensure that data remains uncorrupted even through fluctuations and failure of power to the system. Additionally, the Numonyx FDI intelligent wear-leveling techniques increase cycling endurance of flash memory blocks. The Numonyx FDI read-while-write (RWW) capabilities are optimized to allow data writes while simultaneously reading code from the same flash memory component. Numonyx FDI acts as a real-time interrupt handler, enabling software-based RWW. In software-based RWW, Numonyx FDI queues data to be written, while code runs directly out of flash memory; when code is not being read, Numonyx FDI performs flash write operations in the background to transfer queue contents to flash memory. When hardware-based RWW is available, Numonyx FDI takes full advantage of the hardware features to reduce interrupt latency. FDI has been ported to every major chipset vendor and is suitable for RTOS and supports L Family. Migration Guide February 2009 14 Order Number: 309205-01

6.0 Summary This application note illustrates that a system design can migrate from Flash Memory to Numonyx Flash memory devices across all densities with minimum software differences. February 2009 Migration Guide Order Number: 309205-01 15

Migration Guide February 2009 16 Order Number: 309205-01

1.0 Introduction...5 2.0 Differences Between Flash Memory Devices...6 2.1 Features...6 2.2 Performance and Block Size Comparisons...7 2.3 Device Identifiers...7 2.4 Device Command Codes...8 3.0 Register... 11 4.0 Configuration Registers... 12 5.0 Software Considerations... 13 5.1 Numonyx FDI... 14 6.0 Summary... 15 February 2009 Application Note 308202-01 1

Application Note February 2009 2 308202-01