Data center day. Non-volatile memory. Rob Crooke. August 27, Senior Vice President, General Manager Non-Volatile Memory Solutions Group

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Transcription:

Non-volatile memory Rob Crooke Senior Vice President, General Manager Non-Volatile Memory Solutions Group August 27, 2015

THE EXPLOSION OF DATA Requires Technology To Perform Random Data Access, Low Queue Depth and Cache Line Size Optimally Many Industries Are Seeking the Ideal Memory Financial Services Fraud Detection Online Advertising Scientific Research Gaming

B GB data center growth projections 60.0 Data Center SSD GB SAM 50.0 40.0 30.0 20.0 10.0 0.0 2013 2014 2015 2016 2017 2018 2019 PCIe SAS SATA Source: Forward Insight Q2 15

Latency (us) 10,000 Transition to NVMe 100 175 SSD NAND technology offers ~100X reduction in latency versus HDD 150 125 100 NVMe eliminates ~20 µs of latency today 75 50 25 Drive Latency Controller Latency (ie. SAS HBA) Software Latency 0 HDD +SAS/SATA SSD NAND +SAS/SATA SSD NAND +NVMe Technology claims are based on comparisons of latency, density and write cycling metrics amongst memory technologies recorded on published specifications of in-market memory products against internal Intel specifications.

Customer inspired HPC BIG DATA SDI Enterprise IT Cloud Service Provider Telco Service Provider Government Academia & Science

Transition from HDD to NAND Sata SSD Microsoft SQL for Big Data Analytics HPC Performance /Hour Time to Answer Performance Server Efficiency BIG DATA x2.7 0.70 x5.8 x2 SDI Queries/hr Reduce query time from 55 to 38 min Throughput of legacy solution Need 2 SATA servers in order to complete the work of 4 HDD legacy servers Enterprise IT Source : http://www.principledtechnologies.com/lenovo/rd650_storage_performance_0415.pdf Cloud Service Provider Telco Service Provider Government Academia & Science

Acceleration from HDD to NAND NVMe SSD Microsoft SQL for Big Data Analytics HPC Performance /Hour Time to Answer Performance Server Efficiency BIG DATA x7 1/2 x16.6 x4 SDI Queries/hr Reduce query time to 28 minutes, cutting the total time to answer in half Throughput of legacy solution Only need 1 server to do the work of 4 previous servers Enterprise IT Source : http://www.principledtechnologies.com/lenovo/rd650_storage_performance_0415.pdf Cloud Service Provider Telco Service Provider Government Academia & Science

3D Xpoint TECHNOLOGY Breaks The Memory Storage Barrier SRAM Latency: 1X Size of Data: 1X DRAM Latency: ~10X Size of Data: ~100X STORAGE 3D XPoint Latency: ~100X Size of Data: ~1,000X NAND SSD Latency: ~100,000X Size of Data: ~1,000X HDD Latency: ~10 MillionX Size of Data: ~10,000X Technology claims are based on comparisons of latency, density and write cycling metrics amongst memory technologies recorded on published specifications of in-market memory products against internal Intel specifications.

The breakthrough A new class of non-volatile memory Media 1000X faster THAN NAND 1000X endurance OF NAND 10X denser THAN DRAM Nand-like densities and dram-like speeds

Latency (us) 10,000 Transition to NVMe 100 175 SSD NAND technology offers ~100X reduction in latency versus HDD 150 125 100 NVMe eliminates ~20 µs of latency today 75 50 25 Drive Latency Controller Latency (ie. SAS HBA) Software Latency 0 HDD +SAS/SATA SSD NAND +SAS/SATA SSD NAND +NVMe Technology claims are based on comparisons of latency, density and write cycling metrics amongst memory technologies recorded on published specifications of in-market memory products against internal Intel specifications.

Memory connected dimms offer <1µ s latency Latency (us) 90 35 30 25 20 15 10 5 Drive Latency Controller Firmware NVM Tread NVM xfer Access time to <1µs 3D XPoint based SSDs provide ~10x latency reduction vs NAND SSDs Software latency dominates and storage requires large data access granularity DIMM memory eliminates software latency and permits small granularity cache line access Drive Latency Software Latency 0 SSD NAND +NVMe SSD 3D XPoint +NVMe DIMM Memory Technology claims are based on comparisons of latency, density and write cycling metrics amongst memory technologies recorded on published specifications of in-market memory products against internal Intel specifications.

DDR4 electrical & physical compatible Required support delivered by next generation Intel Xeon platform Up to 4X system memory capacity, at significantly lower cost than DRAM Intel DIMMs Based on 3D XPoint Technology Future Xeon Processor Intel DIMM (based on 3D XPOINT Technology) Can deliver big memory benefits without modifications to OS or applications DDR4 DIMM (acts as write-back cache)

3D Xpoint enables future applications End User possibilities Massive in-memory data base Fast system recovery Low latency High endurance Gaming High fidelity pattern recognition Genomics Amazing new experiences

3D Xpoint a breakthrough in memory technology

Risk Factors The above statements and any others in this document that refer to plans and expectations for the third quarter, the year and the future are forward-looking statements that involve a number of risks and uncertainties. Words such as "anticipates," "expects," "intends," "goals," "plans," "believes," "seeks," "estimates," "continues," "may," "will," "should," and variations of such words and similar expressions are intended to identify such forward-looking statements. Statements that refer to or are based on projections, uncertain events or assumptions also identify forward-looking statements. Many factors could affect Intel's actual results, and variances from Intel's current expectations regarding such factors could cause actual results to differ materially from those expressed in these forward-looking statements. Intel presently considers the following to be important factors that could cause actual results to differ materially from the company's expectations. Demand for Intel's products is highly variable and could differ from expectations due to factors including changes in business and economic conditions; consumer confidence or income levels; the introduction, availability and market acceptance of Intel's products, products used together with Intel products and competitors' products; competitive and pricing pressures, including actions taken by competitors; supply constraints and other disruptions affecting customers; changes in customer order patterns including order cancellations; and changes in the level of inventory at customers. Intel's gross margin percentage could vary significantly from expectations based on capacity utilization; variations in inventory valuation, including variations related to the timing of qualifying products for sale; changes in revenue levels; segment product mix; the timing and execution of the manufacturing ramp and associated costs; excess or obsolete inventory; changes in unit costs; defects or disruptions in the supply of materials or resources; and product manufacturing quality/yields. Variations in gross margin may also be caused by the timing of Intel product introductions and related expenses, including marketing expenses, and Intel's ability to respond quickly to technological developments and to introduce new products or incorporate new features into existing products, which may result in restructuring and asset impairment charges. Intel's results could be affected by adverse economic, social, political and physical/infrastructure conditions in countries where Intel, its customers or its suppliers operate, including military conflict and other security risks, natural disasters, infrastructure disruptions, health concerns and fluctuations in currency exchange rates. Results may also be affected by the formal or informal imposition by countries of new or revised export and/or import and doing-business regulations, which could be changed without prior notice. Intel operates in highly competitive industries and its operations have high costs that are either fixed or difficult to reduce in the short term. The amount, timing and execution of Intel's stock repurchase program could be affected by changes in Intel's priorities for the use of cash, such as operational spending, capital spending, acquisitions, and as a result of changes to Intel's cash flows or changes in tax laws. Intel's expected tax rate is based on current tax law and current expected income and may be affected by the jurisdictions in which profits are determined to be earned and taxed; changes in the estimates of credits, benefits and deductions; the resolution of issues arising from tax audits with various tax authorities, including payment of interest and penalties; and the ability to realize deferred tax assets. Gains or losses from equity securities and interest and other could vary from expectations depending on gains or losses on the sale, exchange, change in the fair value or impairments of debt and equity investments, interest rates, cash balances, and changes in fair value of derivative instruments. Product defects or errata (deviations from published specifications) may adversely impact our expenses, revenues and reputation. Intel's results could be affected by litigation or regulatory matters involving intellectual property, stockholder, consumer, antitrust, disclosure and other issues. An unfavorable ruling could include monetary damages or an injunction prohibiting Intel from manufacturing or selling one or more products, precluding particular business practices, impacting Intel's ability to design its products, or requiring other remedies such as compulsory licensing of intellectual property. Intel's results may be affected by the timing of closing of acquisitions, divestitures and other significant transactions. In addition, risks associated with our proposed acquisition of Altera are described in the Forward Looking Statements paragraph of Intel s press release dated June 1, 2015, which risk factors are incorporated by reference herein. A detailed discussion of these and other factors that could affect Intel's results is included in Intel's SEC filings, including the company's most recent reports on Form 10-Q, Form 10-K and earnings release.

Legal Disclaimers Software and workloads used in performance tests may have been optimized for performance only on Intel microprocessors. Performance tests, such as SYSmark and MobileMark, are measured using specific computer systems, components, software, operations and functions. Any change to any of those factors may cause the results to vary. You should consult other information and performance tests to assist you in fully evaluating your contemplated purchases, including the performance of that product when combined with other products. All dates, forecasts and products specified in this presentation are subject to change without notice. This presentation will not be updated to reflect any such changes. Copyright 2015 Intel Corporation. *Other names and brands may be claimed as the property of others.