Micron part numbers e MMC registers Multilevel cell (MLC) to single-level cell (pslc) setting flow

Similar documents
Technical Note. Refresh Features for Micron e.mmc Automotive 5.0 Devices. Introduction. TN-FC-54: Refresh Features for e.mmc Automotive 5.

Enabled (both during preconditioning and measurement) 4KB for random writes, 2MB for sequential writes

Technical Note. Refresh Features for Micron e.mmc Automotive 5.1 Devices. Introduction. TN-FC-60: Refresh Features for e.mmc Automotive 5.

Technical Note. Booting from Embedded MMC (e.mmc) Introduction. TN-FC-06: Booting from Embedded MMC. Introduction

Command Register Settings Description Notes

Monitoring Ready/Busy Using the READ STATUS (70h) Command

MMC power. NAND Flash power

MMC Controller and 64GB NAND Flash

Product Brief LPDDR2-PCM and Mobile LPDDR2 121-Ball MCP

Maximum Monolithic Density Density Number of Stacks N25Q512Axxx. 512Mb 2 256Mb N25Q00AAxxx 1Gb 4 MT25Qxs01Gxxx. 1Gb 2 512Mb MT25Qxs02Gxxx 2Gb 4

Technical Note. Improving Random Read Performance Using Micron's SNAP READ Operation. Introduction. TN-2993: SNAP READ Operation.

MT29F4G08AAA, MT29F8G08BAA, MT29F8G08DAA, MT29F16G08FAA, MT29F8G08MAA, MT29F16G08QAA,

Ultra e.mmc 4.41 I/F

Technical Note Designing for High-Density DDR2 Memory

Embedded Multi-Media Card

Technical Note. One-Time Programmable (OTP) Operations. Introduction. TN-29-68: 2Gb: x8, x16 NAND Flash Memory. Introduction

e.mmc 4.41 I/F Preliminary Data Sheet February 2010

Technical Note. Migrating from Micron M29W Devices to MT28EW NOR Flash Devices. Introduction. TN-13-50: Migrating M29W to MT28EW NOR Flash Devices

Overview. TN-29-08: Hamming Codes for NAND Flash Memory Devices Overview

(Altera ) SoC FPGA Platforms

Technical Note. Migrating from S29GL-S Devices to MT28FW NOR Flash Devices. Introduction. TN-13-41: Migrating S29GL-S to MT28FW NOR Flash Devices

Parallel NOR and PSRAM 56-Ball MCP Combination Memory

Parallel NOR and PSRAM 88-Ball MCP Combination Memory

GLS85VM1016B / 1032B / 1064B Industrial Temp emmc NANDrive

Technical Note NAND Flash Performance Increase with PROGRAM PAGE CACHE MODE Command

Technical Note. Maximize SPI Flash Memory Design Flexibility With a Single Package. Introduction

GLS85VM1004A / 1008A / 1016A / 1032A Industrial Temp emmc NANDrive

Migrating from Macronix MX29GL-G/F and MX68GL-G Devices to MT28EW NOR Flash Devices

SMART Self-Test Reference for P400e SATA SSDs

Technical Note Using Micron Asynchronous PSRAM with the NXP LPC2292 and LPC2294 Microcontrollers

Technical Note. Enabling On-Die ECC NAND with JFFS2. Introduction. TN-29-75: Enabling On-Die ECC NAND with JFFS2. Introduction.

Technical Note Using CellularRAM to Replace UtRAM

DDR2 SDRAM UDIMM MT16HTF25664AZ 2GB MT16HTF51264AZ 4GB For component data sheets, refer to Micron s Web site:

Technical Note. SMART Command Feature Set for the Introduction. TN-FD-34: 5100 SSD SMART Implementation. Introduction

Technical Note. SMART Command Feature Set for the M500DC. Introduction. TN-FD-26: M500DC SSD SMART Implimentation. Introduction

Technical Note. SMART Command Feature Set for the M510DC. Introduction. TN-FD-33: M510DC SSD SMART Implementation. Introduction

TwinDie 1.35V DDR3L SDRAM

NAND Flash Performance Improvement Using Internal Data Move

e.mmc 4.51 I/F Released Data Sheet Feb 2013

Micron Memory Support for NXP i.mx8 Platforms

Technical Note. J3F 32Mb, 64Mb, 256Mb Parallel NOR Flash Memory Software Device Drivers. Introduction. TN-12-50: J3F Software Device Drivers

Selecting a Flash Memory Solution for Embedded Applications

e.mmc 4.5 I/F Released Data Sheet V1 Aug 2012

Migrating from Spansion Am29F to Micron M29F NOR Flash Memories

1. The values of t RCD and t RP for -335 modules show 18ns to align with industry specifications; actual DDR SDRAM device specifications are 15ns.

Technical Note. Client SATA SSD SMART Attribute Reference. Introduction. TN-FD-22: Client SATA SSD SMART Attribute Reference.

User Guide. Storage Executive. Introduction. Storage Executive User Guide. Introduction

Technical Note. Enabling SD/uSD Card Lock/Unlock Feature in Linux. Introduction. TN-SD-01: Enabling SD/uSD Card Lock/Unlock in Linux.

Micron Memory Support for NXP i.mx6 Platforms

Options. Data Rate (MT/s) CL = 3 CL = 2.5 CL = 2-40B PC PC PC

* Performance and power specifications subject to change

Technical Note. Migrating from Micron M25P to Micron MT25Q 128Mb. Introduction. TN-25-34: Migrating from M25P to MT25Q 128Mb.

Mobile LPDDR (only) 152-Ball Package-on-Package (PoP) TI-OMAP MT46HxxxMxxLxCG MT46HxxxMxxLxKZ

Micron Quad-Level Cell Technology Brings Affordable Solid State Storage to More Applications

Industrial emmc 4.5 Specification (Pseudo SLC)

Technical Note. SMART Command Feature Set for the eu500. Introduction. TN-FD-35: eu500 eusb SMART Commands. Introduction

e.mmc 4.51 with HS200 I/F Released Data Sheet December 2013

Technical Note Using CellularRAM Memory to Replace Single- and Dual-Chip Select SRAM

Technical Note. Design Considerations when using NOR Flash on PCBs. Introduction and Definitions

DDR SDRAM UDIMM MT16VDDT6464A 512MB MT16VDDT12864A 1GB MT16VDDT25664A 2GB

DDR SDRAM SODIMM MT8VDDT1664H 128MB 1. MT8VDDT3264H 256MB 2 MT8VDDT6464H 512MB For component data sheets, refer to Micron s Web site:

User Guide. Storage Executive Command Line Interface. Introduction. Storage Executive Command Line Interface User Guide Introduction

Technical Note. GDDR5X: The Next-Generation Graphics DRAM. Introduction. TN-ED-02: GDDR5X: The Next-Generation Graphics DRAM.

Enhanced Serial Peripheral Interface (espi)

DDR SDRAM UDIMM MT8VDDT3264A 256MB MT8VDDT6464A 512MB For component data sheets, refer to Micron s Web site:

Technical Note. Reset Configurations for MT25Q, MT25T, and N25Q Flash Memory Devices. Introduction

Memory Device Evolution

Technical Note. Migrating from Micron M25PE to Micron MT25Q 128Mb. Introduction. TN-25-36: Migrating from M25PE to MT25Q 128Mb.

Power-Up, Power-Down, and Brownout Considerations on MT25Q, MT25T, and MT35X NOR Flash Memory

THIS SPEC IS OBSOLETE

SST39LF010/020/040 and SST39VF010/020/040

DDR SDRAM UDIMM. Draft 9/ 9/ MT18VDDT6472A 512MB 1 MT18VDDT12872A 1GB For component data sheets, refer to Micron s Web site:

SLC vs MLC: Considering the Most Optimal Storage Capacity

TwinDie 1.35V DDR3L SDRAM

DDR SDRAM SODIMM MT16VDDF6464H 512MB MT16VDDF12864H 1GB

TOSHIBA e-mmc Module. THGBM3G4D1FBAIG has the JEDEC/MMCA Version 4.41 interface with either 1-I/O, 4-I/O and 8-I/O mode support. Vss RFU RFU RFU.

Embedded and Removable Flash Memory Storage Solutions for Mobile Handsets and Consumer Electronics

Optimize your system designs using Flash memory

MT51J256M32 16 Meg x 32 I/O x 16 banks, 32 Meg x 16 I/O x 16 banks. Options 1. Note:

inand Extreme TM e.mmc 5.0 with HS400 Interface

GLS85LP0512P / 1002P / 1004P / 1008P Industrial Grade PATA NANDrive

NAND Flash and Mobile LPDRAM 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP )

Technical Note DDR2 (Point-to-Point) Package Sizes and Layout Basics

Technical Note. Software Driver for M29EW NOR Flash Memory. Introduction. TN-13-12: Software Driver for M29EW NOR Flash Memory.

Solid State Drives (SSDs) Jin-Soo Kim Computer Systems Laboratory Sungkyunkwan University

NAND Flash-based Storage. Jin-Soo Kim Computer Systems Laboratory Sungkyunkwan University

MLC 2.5 PATA SSD. HERCULES-Q Series. Product Specification MLC APRO RUGGED METAL 2.5 PATA SSD. Version 01V0 Document No. 100-xR2IF-MQTMB June 2016

DDR2 SDRAM UDIMM MT4HTF1664AY 128MB MT4HTF3264AY 256MB MT4HTF6464AY 512MB. Features. 128MB, 256MB, 512MB (x64, SR) 240-Pin DDR2 SDRAM UDIMM.

GLS86FB008G2 / 016G2 / 032G2 / 064G2 Industrial Temp msata ArmourDrive

e-mmc Special Features via TL SEP 2017

How Good Is Your Memory? An Architect s Look Inside SSDs

Macrotron Systems, Inc. Flash Media Products. Part Number Family: 2.5 PATA (IDE) SSD (High Performance Series) PA25SMXXXXXMXXMX

How to Power On and Power Off the M29F Flash Memory Device

Datasheet. Embedded. Storage Solutions. Embedded SATA EDOM SATAIII. SDM0FII-V Series - 1 -

GLS85LS1002A/1004A/1008B/1016B/1032B/1064B Industrial / Commercial Temp SATA NANDrive

Technical Note. Adding ECC to a Data Bus with DDR4 x16 Components. Introduction. TN-40-41: Adding ECC With DDR4 x16 Components.

Technical Note. Migrating from Cypress's FL-S and FS-S to Micron's MT25Q. Introduction

Cervoz Industrial SSD

4 Mbit (x16) Multi-Purpose Flash Plus SST39VF401C / SST39VF402C SST39LF401C / SST39LF402C

SMART Modular emmc v4.51+ Product Family

Transcription:

Technical Note Introduction Migrating from e MMC Version 4.4 to 4.41 Devices Introduction This technical note describes the changes to the JEDEC e MMC specification from version 4.4 to version 4.41. It also discusses the considerations to make when migrating from Micron e MMC TM ver. 4.4 to ver. 4.41 devices, including comparisons of the following: Micron part numbers e MMC registers Multilevel cell (MLC) to single-level cell (pslc) setting flow 1 Products and specifications discussed herein are subject to change by Micron without notice.

JEDEC e MMC Standard Changes The most significant items added to the JEDEC e MMC standard (i.e., JEDEC Standard No. 84-A441), from ver. 4.4 to ver. 4.41, are as follows: Enhanced reliable write: No limit on the size of a reliable write (see the Enhanced Reliable Write section). Background operations: Operations that the device executes when it is not servicing the host (see the Background Operations section). High-priority interrupt (HPI) mechanism: A mechanism that enables servicing highpriority requests by allowing the device to interrupt a lower-priority operation before it is complete (see the High-Priority Interrupt section). Additional changes include: Added clarification for command operation in RPMB partition. Added clarification of address sequence for user area, including enhanced area and error condition for partition configuration. Added clarification for error behavior when partition is configured without setting ERASE_GROUP_DEF and clarification for the device behavior in case the device received a WRITE/ERASE command when the condition of ERASE_GROUP_DEF bit has been changed from the previous power cycle. Added clarification for C_SIZE and SEC_COUNT after configuring partitions. Added clarification for the configuration of boot and alternative boot operation. Added clarification for LOCK_UNLOCK feature of the e MMC. HPI background and one possible solution. Introduced new extended CSD registers. Corrected equation of general purpose partition size and enhanced user data area size. Removed File formats for the e MMC section, formerly section 14. Note: JEDEC e MMC Standard Changes To view all JEDEC e MMC standard changes from ver. 4.4 to 4.41, refer to the Changes from version 4.4 to 4.41 section of JEDEC Standard No. 84-A441. 2

Enhanced Reliable Write JEDEC e MMC Standard Changes A reliable write is a multiple-block write with a predefined block count that includes reliable write parameters. This transaction is similar to a basic, predefined multiple-block write because the host must use the SET_BLOCK_COUNT command CMD23 immediately preceding the WRITE_MULTIPLE_BLOCK command CMD25. A reliable write differs from the predefined multiple-block write as follows: A logical address points to the old data, which must remain unchanged until new data is written to the same logical address and is successfully programmed. This ensures that the target address updated by the reliable write transaction never contains undefined data. Data must remain valid even if a sudden power loss occurs during programming. The reliable write has two implementations: legacy (supported by both ver. 4.4 and 4.41 of the JEDEC e MMC standard) and enhanced (supported only by JEDEC e MMC standard ver. 4.41). The type of reliable write that is supported by a JEDEC e MMC standard ver. 4.41 device is indicated by the EN_REL_WR bit in the WR_REL_PARAM (EXT_CSD [166]). The two cases are shown as follows: 1. EN_REL_WR = 0 At a maximum, two sizes of reliable write transactions are supported: 512B and the reliable write sector count (REL_WR_SEC_C) parameter in EXT_CSD [222] multiplied by 512B. The function is activated by setting the reliable write request parameter (bit 31) to 1 in the SET_BLOCK_COUNT command (CMD23) argument. The REL_WR_SEC_C parameter in EXT_CSD indicates the supported write sector count. The RELIABLE WRITE function is only supported under the following conditions: The length of the WRITE operation equals the supported reliable write size or 512B. The start address of the RELIABLE WRITE operation is aligned to the length of the operation (i.e., the RELIABLE WRITE start address is always a multiple of its own length). The reliable write request is active. When the RELIABLE WRITE function is not supported, the transaction is handled as a basic, predefined multiple-block write case. When the length of the WRITE operation is set to 0, the operation is executed as a basic, open-ended multiple-block-write case, even when the reliable write request is active. 2. EN_REL_WR = 1 The reliable write size has no limit. The function is activated by setting the reliable write request parameter (bit 31) to 1 in the SET_BLOCK_COUNT command (CMD23) argument. Reliable write transactions must be sector-aligned; if a reliable write is not sector-aligned, the error bit 19 is set and the transaction does not complete. If a power failure occurs during a RELIABLE WRITE operation, each sector modified by the operation is atomic. After the power failure, sectors modified by the interrupted RELIABLE WRITE operation may contain old data or new data. 3

JEDEC e MMC Standard Changes When a RELIABLE WRITE operation is interrupted by an HPI operation, the sectors that the register marks as complete contain new data and the remaining sectors contain old data. The REL_WR_SEC_C register should be set to 1 and has no impact on the RELIA- BLE WRITE operation. 4

Background Operations JEDEC e MMC Standard Changes Devices must perform several internal maintenance operations. In order to reduce latencies during time-critical operations like READ and WRITE, it is best to execute maintenance operations at other times, like when the host is not being serviced. Operations are separated into two types: Foreground operations: Operations that require the device to service the host, such as READ or WRITE commands. Background operations: Operations that the device executes when not servicing the host. Since foreground operations are higher priority than background operations, the host may interrupt ongoing background operations using the HPI mechanism (see the High- Priority Interrupt section). When the device is not needed by the host, the host writes any value to BKOPS_START (EXT_CSD [164]), which manually starts background operations. Since the device stays busy until the background operations are complete, the host can use any system idle time to allow the device to perform background operations. The host sets bit [0] of BKOPS_EN (EXT_CSD [163]) to communicate to the device that background operations are going to start periodically. The device can then delay some maintenance operations until the host writes to BKOPS_START. The device reports background operation status in bits [1:0] of BKOPS_STATUS (EXT_CSD [246]). These bits represent the urgency of the background operations. There are four status levels: 1. 0x0: No operations required 2. 0x1: Operations outstanding non critical 3. 0x2: Operations outstanding performance being impacted 4. 0x3: Operations outstanding critical The host checks the status periodically and starts background operations as needed. This allows enough time for the device to perform its maintenance operations, which helps to reduce latencies during the foreground operations. If the status is level 4 (i.e., critical), some operations may extend beyond their original timeouts because of maintenance operations that can no longer be delayed. Ideally, the host gives the device enough time for background operations to avoid reaching a critical status in the first place. To allow the host to quickly detect the higher levels, the bit 6 (URGENT_BKOPS) in the card status is set whenever the status reaches level 4. So, if URGENT_BKOPS is set, the device needs background operations urgently. This allows the hosts to detect urgent levels on every R1-type response. The host still reads the full status from the BKOPS_STATUS byte periodically and starts background operations as needed. The background operations can start in the following modes: Default (automatic) mode: When the URGENT_BKOPS bit is high, the host sends a PROGRAM or ERASE command to the card, and during the busy, starts a refresh. Manual mode: When the URGENT_BKOPS bit is high, the host must set the bit (BKOPS_START) with CMD6, so after the read, during the busy of CMD6, the card starts a refresh. The background operations feature is optional in JEDEC e MMC ver. 4.41; it is supported in Micron e MMC. 5

High-Priority Interrupt JEDEC e MMC Standard Changes In some scenarios, different types of data on the device may have different priorities for the host. The high-priority interrupt (HPI) mechanism enables high-priority requests to be serviced by allowing the device to interrupt a lower priority operation before it is actually completed within OUT_OF_INTERRUPT_TIME (EXT_CSD [198]) timeout (order of tens of ms). To complete the original request, the host may need to repeat either part or all of the interrupted operation. The HPI mechanism is enabled issuing CMD12 (STOP_TRANSMISSION) with HPI bit [0] set. Before starting the HPI mechanism, the host enables the HPI mechanism by setting the HPI_EN bit in HPI_MGMT (EXT_CSD [161]). An HPI is only executed during a programming state. It indicates to the device that a higher priority command is pending; therefore, it should interrupt the current operation and return to a transfer state with a different timeout value as soon as possible. If CMD12 is used with an HPI bit set, it differs from the non-hpi command in the allowed state transitions. If an HPI is received in a state other than the programming state: If the state transition is allowed, response is sent but the HPI bit is ignored. If the state transition is not allowed, the command is regarded as an illegal command. The HPI command is accepted as a legal command in the program state. However, only the commands below may be interrupted by HPI: CMD24 (WRITE_BLOCK) CMD25 (WRITE_MULTIPLE_BLOCK) CMD38 (ERASE) CMD6 (SWITCH) May only be interrupted when writing to the BKOPS_START field in EXT_CSD If an HPI is received during commands that cannot be interrupted, the HPI command sends a response but it has no effect and the original command is completed normally possibly exceeding the OUT_OF_INTERRUPT_TIME timeout. If an HPI is supported, REL_WR_SEC_C is always 1. The HPI feature is optional in JEDEC e MMC ver. 4.41; it is supported in Micron e MMC. 6

e MMC ver. 4.4 and ver. 4.41 Features Comparison The table below compares the Micron part numbers of e MMC ver. 4.4 and ver. 4.41. Table 1: Micron Part Numbers Features Comparison Density e MMC ver. 4.4 e MMC ver. 4.41 Micron Part Number Package Dimensions Micron Part Number Package Dimensions 4GB MTFC4GGQDQ-IT 100-ball LBGA, 14x18x1.4 N2M400FDB311A3CE/F 100-ball LBGA, 14x18x1.4 8GB MTFC8GKQDQ-IT 100-ball LBGA, 14x18x1.4 N2M400GDB321A3CE/F 100-ball LBGA, 14x18x1.4 16GB MTFC16GKQDQ-IT 100-ball LBGA, 14x18x1.4 N2M400HDB321A3CE/F 100-ball LBGA, 14x18x1.4 4GB MTFC4GGQDM-IT 153-ball FBGA, 11.5x13x1.2 MTFC4GMVEA-4M IT 153-ball WFBGA, 11.5x13x0.8 4GB MTFC4GGQDI-IT 169-ball FBGA,12x16x1.2 MTFC4GMVEA-4M IT 153-ball WFBGA, 11.5x13x0.8 8GB MTFC8GKQDI-IT 169-ball FBGA, 12x16x1.2 MTFC8GLVEA-4M IT 153-ball WFBGA, 11.5x13x0.8 16GB MTFC16GKQDI-IT 169-ball FBGA, 12x16x1.2 MTFC16GJVEC-4M IT 169-ball WFBGA, 14x18x0.8 32GB MTFC32GKQDH-IT 169-ball FBGA, 12x18x1.4 MTFC32GJVED-4M IT 169-ball VFBGA, 14x18x1.0 Notes: e MMC ver. 4.4 and ver. 4.41 Features Comparison 1. Ver. 4.41 is backward-compatible, which includes ballouts. 2. If your ver. 4.4 device is not listed above, contact your Micron representative for assistance with the Micron part number transition. 3. All dimensions in millimeters (mm). The tables below show the main differences between ECSD and CSD registers from ver. 4.4 to ver. 4.41. Table 2: ECSD Register Comparison Features Micron ver. 4.4 e MMC Micron ver. 4.41 e MMC ECSD Byte 1 High-priority interrupt (HPI) Not supported Supported 503 Background operation Not supported Supported 502 Double data rate (DDR) during boot Maximum timeout for switch CMD when switching partitions Maximum timeout to close a CMD interrupted by HPI Not supported Supported 228 Not defined Defined 199 Not defined Defined 198 DDR Not supported Supported 196 Enhanced reliable write Not supported Supported 2 166.2 Write reliability settings register Not supported Supported 2 167 Enhanced partition feature 1. Different setting flow 3 2. No maximum enhanced size defined in ECSD register; it is deduced by total sector count 1. Different setting flow 3 2. Maximum enhanced size defined in ECSD register 159:157 Notes: 1. See the Extended CSD register section of JEDEC Standard No. 84-A441. 2. See the appropriate Micron data sheet to determine if this feature is enabled. 3. See the MLC to pslc Setting Flow Comparison section of this technical note. 7

e MMC ver. 4.4 and ver. 4.41 Features Comparison Table 3: CSD Register Comparison Features Micron ver. 4.4 e MMC Micron ver. 4.41 e MMC CSD Bit CSD structure 0x2: CSD version 1.2 0x3: CSD structure version defined in ECSD[194] Drive stage register (DSR) DSR not implemented DSR implemented 76 127:126 8

MLC to pslc Setting Flow Comparison According to the JEDEC standard, the user area may be split into two different types: MLC and enhanced SLC (pslc). It is also possible for either MLC or pslc to take up the entire user area. In an MLC device, each metal-oxide-semiconductor field-effect transistor (MOSFET) can store 2 bits; in a pslc device, each MOSFET can store 1 bit. For this reason, pslc is known to have higher reliability, endurance, and performance compared to MLC. See the related NAND device data sheet for more information. The table below compares the setting flow used to configure the entire user area of a 4GB MLC-based device to pslc mode from ver. 4.4 to ver. 4.41. Table 4: MLC to pslc Setting Flow Comparison Flow Step in ver. 4.4 1 Comments Difference in ver. 4.41 CMD6(175,0x01);cmd13(,); ERASE_GROUP_DEF field (byte 175) CMD13 is not needed CMD6(139,0x00);cmd13(,); ENH_START_ADDR field (bytes[139:136]) CMD13 is not needed CMD6(138,0x00);cmd13(,); Start address 00000 CMD13 is not needed CMD6(137,0x00);cmd13(,); CMD13 is not needed CMD6(136,0x00);cmd13(,); CMD13 is not needed CMD6(142,0x00);cmd13(,); ENH_SIZE_MULT field (bytes[142:140]) CMD13 is not needed CMD6(141,0x00);cmd13(,); CMD13 is not needed CMD6(140,0x39);cmd13(,); Multiplier of 0x000039 CMD13 is not needed; instead of hard coding 0x000039 as a multiplier, read out CMD8 to read ECSD value and determine the maximum supported enhanced size CMD6(156,0x01);cmd13(,); PARTITIONS_ATTRIBUTE field (byte 156) (enhanced user area) CMD6(155,0x01);cmd13(,); PARTITION_SETTING_COMPLETED field (byte 155) Power cycle No extra power cycle needed CMD0 Not needed Pause for 2 or more seconds No delay needed CMD1 can be used to verify that e MMC is ready MLC to pslc Setting Flow Comparison Ready response = 0xc0ff8080 Power cycle Normal init sequence Note: 1. The following code can be used as reference: CMD Number (ESCD Byte Address [decimal],value to Write [hex]) 9

Revision History Revision History Rev. A 08/12 Initial release 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 www.micron.com/productsupport Customer Comment Line: 800-932-4992 Micron and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur. 10