GRF2051. Ultra-Low Noise Amplifier; Tuning Range: GHz. Features. Applications. Preliminary. Product Description. Functional Block Diagram Ven

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Ultra-Low Noise Amplifier; Tuning Range: 0.7 3.8 GHz Package: 2.0 x 2.0 mm QFN-12 Product Description Features Reference Condition: 1.9 GHz, 5.0 V and 70 ma Gain: 19.2 db Eval Board NF: 0.37 db De-embedded NF: 0.27 db IIP3: +20.0 dbm IP1dB: +3.2 dbm Flexible Bias Voltage and Current Process: GaAs phemt is an ultra-low noise amplifier designed for wireless infrastructure and other high performance RF applications requiring the absolute lowest possible NF, high gain and outstanding linearity. Broadband external matches deliver outstanding RF performance over 0.7 to 3.8 GHz. Configured as a first stage LNA, linear driver or cascaded gain block, the flexible biasing capability offers high levels of reuse both within a design and across platforms. For higher gain applications from 1.5 GHz up to 4.5 GHz, the pin compatible GRF2052 should be used. Consult with the GRF applications engineering team for application notes, custom tuning/evaluation board data and device s-parameters. Functional Block Diagram Ven NC NC Applications First Stage LNA for Infrastructure, Small Cells and Cellular Repeaters Distributed Antenna Systems (DAS) NC 1 RFin NC NC RFout/Vdd NC Military-Grade GPS Fast Switching TDD Systems NC NC NC 2.0 mm x 2.0 mm QFN-12 Guerrilla RF Proprietary Information. Guerrilla RF TM and the composite logo of Guerrilla RF TM are trademarks of Guerrilla RF, LLC. 2014 Guerrilla RF, LLC. All rights reserved. Revision Date: 11/05/2015 Please contact Guerrilla RF at (+1) 336-510-7840 or sales@guerrilla-rf.com 1 of 17

Absolute Ratings: Parameter Symbol Min. Max. Unit Supply Voltage Vdd 0 7.0 V RF Input Power: (Load VSWR < 2:1; VD: 5.0 volts) PIN MAX +20 dbm Operating Temperature (Package Heat Sink) TAMB -40 +105 C Storage Temperature TSTG -40 +150 C Maximum Channel Temperature (MTTF > 10^6 Hours) Tmax +170 C Maximum Dissipated Power PDISS MAX 500 mw Electrostatic Discharge: Charged Device Model: (TBD) CDM Class 4: 1000 V Human Body Model: (TBD) HBM Class 1B: 500 V Machine Model: (TBD) MM Class A: 50 V Caution! ESD Sensitive Device Exceeding Absolute Maximum Rating conditions may cause permanent damage to the device. Revision Date:11/05/2015 Please contact Guerrilla RF at (+1) 336-510-7840 or sales@guerrilla-rf.com 2 of 17

Pin Out (Top View) 1 Pin Assignments: Pin Name Description Note 1 NC No Connect or Ground No internal connection to die 2 RF_In RF Input External match must provide DC block 3 NC No Connect or Ground No internal connection to die 4 NC No Connect or Ground No internal connection to die 5 NC No Connect or Ground No internal connection to die 6 NC No Connect or Ground No internal connection to die 7 NC No Connect or Ground No internal connection to die 8 RF_Out/VDD RF Output Provide device Vdd via external bias inductor 9 NC No Connect or Ground No internal connection to die 10 NC No Connect or Ground No internal connection to die 11 NC No Connect or Ground No internal connection to die 12 VENABLE Enable Voltage Input Venable and series resistor set Iddq. Venable < 0.2 volts disables device. PKG GND Ground Provides DC and RF ground for LNA, as well as thermal heat sink. BASE Revision Date:11/05/2015 Please contact Guerrilla RF at (+1) 336-510-7840 or sales@guerrilla-rf.com 3 of 17

Nominal Operating Parameters: Parameter Symbol Specification Min. Typ. Max. Unit Condition Gain Mode (Venable high) Vdd = 5.0 V, TA = 25 C Test Frequency Ftest 1900 MHz 1700 2700 MHz Tune Evaluation Board Gain S21 19.3 db Input Return Loss S11-10 db Output Return Loss S22-15 db Evaluation Board Noise Figure NF 0.37 db Evaluation Board SMA to SMA De-embedded Noise Figure NF 0.27 db Device Pin 2 to Pin 8 Input 3rd Order Intercept Point IIP3 +20.0 dbm +3 dbm POUT per tone at 2 MHz Spacing (1899 and 1901 MHz) Input 1dB Compression Point IP1dB +3.2 dbm Switching Rise Time TRISE 500 ns Switching Fall Time TFALL 500 ns Supply Current Idd 70 ma Adjustable for optimal IP3 Enable Current Ienable 2 ma Thermal Data Thermal Resistance (measured via IR scan) Θjc 118 ᵒC/W On standard evaluation board Channel Temperature @ +85 C Reference Tchannel +126 ᵒC Vdd: 5.0 V; Iddq: 70 ma; No RF; (Package Heat Sink) Pdiss: 350 mw Multi-Band, Measured Performance Summary Table: Tune (MHz) Reference Freq. (MHz) Gain (db) Eval Board NF (db) IP1dB (dbm) IIP3 (dbm) Bias Condition (V/mA) 700-960 700 24.8 0.46-6.0 +12.0 5.0/70 700-960 824 23.5 0.33-3.3 +13.9 5.0/70 700-960 960 22.2 0.28-1.3 +16.0 5.0/70 1500-1700 (GPS) 1575 19.0 0.35 TBD TBD 3.3/20 1700-2700 1700 20.1 0.29 +2.2 +18.5 5.0/70 1700-2700 1900 19.3 0.37 +3.6 +21.0 5.0/70 1700-2700 2300 17.5 0.42 +5.6 +26.6 5.0/70 1700-2700 2500 16.8 0.45 +6.0 +27.0 5.0/70 1700-2700 2700 16.0 0.48 +7.2 +28.5 5.0/70 3400-3800 3400 15.0 0.50 +8.0 +25.0 5.0/70 3400-3800 3600 14.7 0.65 +8.5 +25.5 5.0/70 3400-3800 3800 14.2 0.65 +9.0 +26.0 5.0/70 Revision Date:11/05/2015 Please contact Guerrilla RF at (+1) 336-510-7840 or sales@guerrilla-rf.com 4 of 17

Evaluation Board Data: 1700 2700 MHz Tune 0.5 Evaluation Board Noise Figure vs. Frequency 0.45 0.4 NF (db) 0.35 0.3 5.0V/70mA 0.25 0.2 1710 1880 1960 2140 2300 2700 Freq (MHz) Evaluation Board Gain vs. Frequency 21 20 19 18 Gain (db) 17 16 15 5.0V 70mA 14 13 12 11 1710 1880 1960 2140 2300 2700 Frequency (MHz) Revision Date:11/05/2015 Please contact Guerrilla RF at (+1) 336-510-7840 or sales@guerrilla-rf.com 5 of 17

Evaluation Board IP1dB vs. Frequency 8 7 6 IP1dB (dbm) 5 4 3 5.0V 70mA 2 1 0 1710 1880 1960 2140 2300 2700 Frequency (MHz) Evaluation Board OP1dB vs. Frequency 22.5 22 OP1dB (dbm) 21.5 5.0V 70mA 21 20.5 1710 1880 1960 2140 2300 2700 Frequency (MHz) Revision Date:11/05/2015 Please contact Guerrilla RF at (+1) 336-510-7840 or sales@guerrilla-rf.com 6 of 17

Evaluation Board IIP3 vs. Frequency IIP3 (dbm) 30 28 26 24 22 20 18 16 14 12 10 1710 1880 1960 2140 2300 2700 Frequency (MHz) 5.0V 70mA OIP3 (dbm) 45 44 43 42 41 40 39 38 37 36 Evaluation Board OIP3 vs. Frequency 1710 1880 1960 2140 2300 2700 Frequency (MHz) 5.0V 70mA Revision Date:11/05/2015 Please contact Guerrilla RF at (+1) 336-510-7840 or sales@guerrilla-rf.com 7 of 17

Evaluation Board S-Parameters and Stability Mu Factor: 1.7 2.7 GHz Tune Note: Mu >= 1.0 implies unconditional stability Revision Date:11/05/2015 Please contact Guerrilla RF at (+1) 336-510-7840 or sales@guerrilla-rf.com 8 of 17

Evaluation Board Data: 3400-3800 MHz Tune Evaluation Board NF vs. Frequency 1 0.9 0.8 0.7 NF (db) 0.6 0.5 0.4 0.3 0.2 0.1 0 3400 3600 3800 Freq (MHz) Evaluation Board Gain vs. Frequency 20 19 18 17 Gain (db) 16 15 14 13 12 11 10 3400 3600 3800 Freq (MHz) Revision Date:11/05/2015 Please contact Guerrilla RF at (+1) 336-510-7840 or sales@guerrilla-rf.com 9 of 17

Evaluation Board IP1dB vs. Frequency 10 9 IP1dB (dbm) 8 7 6 5 3400 3600 3800 Freq (MHz) Evaluation Board OP1dB vs. Frequency 23 22 OP1dB (dbm) 21 20 19 18 3400 3600 3800 Freq (MHz) Revision Date:11/05/2015 Please contact Guerrilla RF at (+1) 336-510-7840 or sales@guerrilla-rf.com 10 of 17

Evaluation Board IIP3 vs. Frequency 30 29 28 27 IIP3 (dbm) 26 25 24 23 22 21 20 3400 3600 3800 Freq (MHz) Evaluation Board OIP3 vs. Frequency OIP3 (dbm) 45 44 43 42 41 40 39 38 37 36 35 3400 3600 3800 Freq (MHz) Revision Date:11/05/2015 Please contact Guerrilla RF at (+1) 336-510-7840 or sales@guerrilla-rf.com 11 of 17

Evaluation Board S-Parameters and Stability Mu Factor: 3.4 3.8 GHz Tune Note: Mu >= 1.0 implies unconditional stability Revision Date:11/05/2015 Please contact Guerrilla RF at (+1) 336-510-7840 or sales@guerrilla-rf.com 12 of 17

M5 Ven Vdd M7 M8 BOM (0402 Package): M1: 12 pf (High Q) M2: DNP M3: 2.0 nh Wire wound M5: See bias R table M7: 0.1 uf M8: 330 pf M9: 3.3 nh M10: 2.7 pf M11: DNP M9 1 RFin M1 M3 M10 RFout M2 M11 Application Schematic: (1.7 to 2.7 GHz) M5 Ven Vdd M7 M8 BOM (0402 Package): M1: 3.6 pf (High Q) M2: DNP M3: 0 Ohm M5: See bias R table M7: 0.1 uf M8: 10 pf M9: 1.5 nh M10: 2.2 pf M11: DNP M9 1 RFin M1 M3 M10 RFout M2 M11 Application Schematic: (3.4 to 3.8 GHz) Revision Date:11/05/2015 Please contact Guerrilla RF at (+1) 336-510-7840 or sales@guerrilla-rf.com 13 of 17

M5 Ven Vdd M7 M8 BOM (0402 Package): M1: 22 pf (High Q) M2: 0.5 pf (High Q) M3: 2.7 nh Wire wound M5: See bias R table M7: 0.1 uf M8: 330 pf M9: 3.3 nh//500 Ohm M10: 2.7 pf M11: 1.0 pf M9 1 RFin M1 M3 M10 RFout M2 M11 Application Schematic: Low Current GPS (1500 to 1700 MHz) M5 Ven Vdd M7 M8 BOM (0402 Package): M1: 39 pf (High Q) M2: 15 nh Wire Wound M3: 18 pf (High Q) M5: See bias R table M7: 0.1 uf M8: 330 pf M9: 18 nh Chip M10: 3.3 pf M11: 330 Ohm Note: extra resistor parallel to M9 M9 200 Ohm 1 RFin M1 M3 M10 RFout M2 M11 Application Schematic: (700 to 960 MHz) Revision Date:11/05/2015 Please contact Guerrilla RF at (+1) 336-510-7840 or sales@guerrilla-rf.com 14 of 17

Theory of Operation: The is a single-stage, high-performance, ultra-low noise linear amplifier that is suitable for a wide range of high performance applications. With simple external matching, the device can be tuned to cover 0.7 to 3.8 GHz. This device is the intermediate gain member of the GRF205X family of LNA optimized as follows: : Optimized for 700 960 MHz (Single Tune) : Optimized for 1.5 to 1.7 GHz low current GPS (Single Tune) : Optimized for 1.7 to 2.7 GHz (Single Tune) : Optimized for 3.4 to 3.8 GHz (Single Tune) GRF2052: Optimized for 2.5 to 2.7 GHz (Single Tune) GRF2052: Optimized for 3.4 to 3.8 GHz (Single Tune) The device Iddq can be set independently from the supply voltage Vdd via the bias resistor (M5) in series with Venable. This allows the device Iddq to be optimized to meet a given linearity requirement with the highest possible efficiency. For a given Venable, increasing this resistor will result in lower Iddq. Bias Resistor Table: Device Vdd Venable M5 (ohms) Iddq (ma) Device Vdd Venable M5 (ohms) Iddq (ma) 5.0 5.0 500 96 4.0 4.0 200 98 5.0 5.0 1000 73 4.0 4.0 500 76 5.0 5.0 1500 60 4.0 4.0 1000 56 5.0 5.0 2000 50 4.0 4.0 1500 45 5.0 5.0 2500 44 4.0 4.0 2000 38 5.0 5.0 3000 39 4.0 4.0 2500 33 5.0 5.0 3500 36 4.0 4.0 3000 30 5.0 5.0 4000 33 Device Vdd Venable M5 (ohms) Iddq (ma) Device Vdd Venable M5 (ohms) Iddq (ma) 3.3 3.3 100 90 1.8 1.8 0 50 3.3 3.3 200 80 1.8 1.8 100 43 3.3 3.3 300 73 1.8 1.8 300 34 3.3 3.3 500 62 1.8 1.8 500 30 3.3 3.3 1000 45 3.3 3.3 1500 36 3.3 3.3 2000 30 Revision Date:11/05/2015 Please contact Guerrilla RF at (+1) 336-510-7840 or sales@guerrilla-rf.com 15 of 17

QFN-12 Package Dimensions Revision Date:11/05/2015 Please contact Guerrilla RF at (+1) 336-510-7840 or sales@guerrilla-rf.com 16 of 17

Data Sheet Release Status: Advance Preliminary Released Notes S-parameter and NF data based on EM simulations for the fully packaged device using foundry supplied transistor s-parameters. Linearity estimates based on device size, bias condition and experience with related devices. All data based on evaluation board measurements in the Guerrilla RF Applications Lab. All data based on device qualification data. Typically, this data is nearly identical to the data found in the preliminary version. Max and min values for key RF parameters are included. Information in this datasheet is specific to the Guerrilla RF, LLC ( Guerrilla RF ) product identified. This datasheet, including the information contained in it, is provided by Guerrilla RF as a service to its customers and may be used for informational purposes only by the customer. Guerrilla RF assumes no responsibility for errors or omissions on this datasheet or the information contained herein. Information provided is believed to be accurate and reliaible, however, no responsibility is assumed by Guerrilla RF for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. Guerrilla RF assumes no liability for any datasheet, datasheet information, materials, products, product information, or other information provided hereunder, including the sale, distribution, reproduction or use of Guerrilla RF products, information or materials. No license, whether express, implied, by estoppel, by implication or otherwise is granted by this datasheet for any intellectual property of Guerrilla RF, or any third party, including without limitation, patents, patent rights, copyrights, trademarks and trade secrets. All rights are reserved by Guerrilla RF. All information herein, products, product information, datasheets, and datasheet information are subject to change and availability without notice. Guerrilla RF reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Guerrilla RF may further change its datasheet, product information, documentation, products, services, specifications or product descriptions at any time, without notice. Guerrilla RF makes no commitment to update any materials or information and shall have no responsibility whatsoever for conflicts, incompatibilities, or other difficulties arising from any future changes. GUERRILLA RF INFORMATION, PRODUCTS, PRODUCT INFORMATION, DATASHEETS AND DATASHEET INFORMATION ARE PROVIDED AS IS AND WITHOUT WARRANTY OF ANY KIND, WHETHER EXPRESS, IMPLIED, STATUTORY, OR OTHERWISE, INCLUDING FITNESS FOR A PARTICULAR PURPOSE OR USE, MERCHANTABILITY, PERFORMANCE, QUALITY OR NON-INFRINGEMENT OF ANY INTELLECTUAL PROPERTY RIGHT; ALL SUCH WARRANTIES ARE HEREBY EXPRESSLY DISCLAIMED. GUERRILLA RF DOES NOT WARRANT THE ACCURACY OR COMPLETENESS OF THE INFORMATION, TEXT, GRAPHICS OR OTHER ITEMS CONTAINED WITHIN THESE MATERIALS. GUERRILLA RF SHALL NOT BE LIABLE FOR ANY DAMAGES, INCLUDING BUT NOT LIMITED TO ANY SPECIAL, INDIRECT, INCIDENTAL, STATUTORY, OR CONSEQUENTIAL DAMAGES, INCLUDING WITHOUT LIMITATION, LOST REVENUES OR LOST PROFITS THAT MAY RESULT FROM THE USE OF THE MATERIALS OR INFORMATION, WHETHER OR NOT THE RECIPIENT OF MATERIALS HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGE. Customers are solely responsible for their use of Guerrilla RF products in the Customer s products and applications or in ways which deviate from Guerrilla RF s published specifications, either intentionally or as a result of design defects, errors, or operation of products outside of published parameters or design specifications. Customers should include design and operating safeguards to minimize these and other risks. Guerrilla RF assumes no liability or responsibility for applications assistance, customer product design, or damage to any equipment resulting from the use of Guerrilla RF products outside of stated published specifications or parameters. Revision Date:11/05/2015 Please contact Guerrilla RF at (+1) 336-510-7840 or sales@guerrilla-rf.com 17 of 17