HD74HC09. Quad. 2-input AND Gates (with open drain outputs) Features. Pin Arrangement

Similar documents
HD74HC00. Quad. 2-input NAND Gates. Features. Pin Arrangement

HD74HC of-8-line Data Selector/Multiplexer. Description. Features. Function Table

HD74HC174. Hex D-type Flip-Flops (with Clear) ADE (Z) 1st. Edition Sep Description. Features. Function Table

HD74HC74. Dual D-type Flip-Flops (with Preset and Clear)

Unit: mm Max Max Max Min 5.06 Max Min ± ± 0.10

HD74AC240/HD74ACT240

HD74HC bit Parallel-out Shift Register. ADE (Z) 1st. Edition Sep Description. Features. Function Table

HD74HC273. Octal D-type Flip-Flops (with Clear) ADE (Z) 1st. Edition Sep Description. Features. Function Table

1S2075(K) Silicon Epitaxial Planar Diode for High Speed Switching. ADE A (Z) Rev. 1 Aug Features. Ordering Information.

Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.

HSM88WK. Proof against high voltage. MPAK package is suitable for high density surface mounting and high speed assembly.

HSM107S. Silicon Schottky Barrier Diode for System Protection. ADE F(Z) Rev 6 Sep Features. Ordering Information.

2SK439. Silicon N-Channel MOS FET. Application. Outline. VHF amplifier SPAK. 1. Gate 2. Source 3. Drain

2SK213, 2SK214, 2SK215, 2SK216

Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.

2SK1056, 2SK1057, 2SK1058

1SS286. Silicon Schottky Barrier Diode for Various Detector, High Speed Switching

1SS106. Silicon Schottky Barrier Diode for Various Detector, High Speed Switching

Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.

2SK522. Silicon N-Channel Junction FET. Application. Outline. VHF amplifier, Mixer, local oscillator SPAK. 1. Gate 2. Source 3.

HZM6.8WA. Silicon Epitaxial Planar Zener Diode for Surge Absorb. ADE A(Z) Rev 1 Feb. 1, Features. Ordering Information.

2SK2220, 2SK2221. Silicon N-Channel MOS FET. ADE (Z) 1st. Edition Mar Application. Features. Outline

2SB727(K) Silicon PNP Epitaxial. Medium speed and power switching complementary pair with 2SD768(K) Base 2. Collector (Flange) 3.

HZ-P Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter

HL6321G/22G. AlGaInP Laser Diodes

2SJ76, 2SJ77, 2SJ78, 2SJ79

2SD2103. Silicon NPN Triple Diffused. Application. Outline. Low frequency power amplifier TO-220FM Base 2. Collector 3. Emitter 2.

HM6264B Series. 64 k SRAM (8-kword 8-bit)

Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply. Type No. Mark Package Code HZS Series Type No. MHD B 7

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SGU04FU IN A GND

HL6319G/20G. 638nm / 10mW AlGaInP Laser Diode

Silicon Planar Zener Diode for Low Noise Application. Part No. Cathode Band Package Name Package Code HZ-L Series Navy blue DO-35 GRZZ0002ZB-A 7 B 2

DUAL REVERSIBLE MOTOR DRIVER MB3863

TC4049BP,TC4049BF, TC4050BP,TC4050BF

S1F77330 Series Technical Manual

Battery-Voltage. 16K (2K x 8) Parallel EEPROMs AT28BV16. Features. Description. Pin Configurations

FM1233A 3-Pin µc Supervisor Circuit

2-wire Serial EEPROM Smart Card Modules AT24C32SC AT24C64SC

Particle Beam Therapy System

TD6127BP TD6127BP. ECL Prescaller For Communications Radio. Features TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic

S5U1C88000P Manual (S1C88 Family Peripheral Circuit Board)

2-wire Serial EEPROM AT24C512. Preliminary. 2-Wire Serial EEPROM 512K (65,536 x 8) Features. Description. Pin Configurations.

FM4428 8KBits Memory Card Chip

74VCX00 Low Voltage Quad 2-Input NAND Gate with 3.6V Tolerant Inputs and Outputs

Connecting EPSON Display Controllers to Topway LCD Panels

LC79431KNE. CMOS LSI Dot-Matrix LCD Drivers. Ordering number : ENA2124

SY89645L. General Description. Features. Block Diagram. Applications. Markets. Precision Low Skew, 1-to-4 LVCMOS/LVTTL-to-LVDS Fanout Buffer

S1V3G340 External SPI-Flash Select Guide

STA400EP Enhanced Plastic Dual 2:1 Analog Mux with IEEE

FM Bytes Memory Card Chip. Datasheet. Dec Datasheet. FM Bytes Memory Card Chip Ver 3.0 1

MB85R1001A. 1 M Bit (128 K 8) Memory FRAM CMOS. DS v01-E DESCRIPTIONS FEATURES FUJITSU SEMICONDUCTOR DATA SHEET

2-wire Serial EEPROM AT24C01A AT24C02 AT24C04 AT24C08 AT24C16

74ABT General description. 2. Features and benefits. 3. Ordering information. Quad 2-input AND gate

4/5 Bit Multiplexed, 1 Bit Latched Port with Standard 2-Wire Bus Interface and Non-Volatile Latches

BIPOLAR ANALOG INTEGRATED CIRCUIT

32Mb Advanced LPSRAM (2M word x 16bit / 4M word x 8bit)

1-Megabit (128K x 8) Low Voltage Paged Parallel EEPROMs

DS3668 Quad Fault Protected Peripheral Driver

TCK22xxxG, TCK2065G, TCK1024G

2-wire Serial EEPROM AT24C512

LAPIS Semiconductor ML9298

MB85R1002A. 1 M Bit (64 K 16) Memory FRAM CMOS. DS v01-E DESCRIPTIONS FEATURES FUJITSU SEMICONDUCTOR DATA SHEET

3-wire Serial EEPROMs AT93C46 AT93C56 AT93C57 AT93C66

S1V30080 Series I2C Interface Sample Program Specifications

FM93C46A/56A/66A Three-wire Serial EEPROM

256K (32K x 8) 3-volt Only Flash Memory

2-wire Serial EEPROMs AT24C128 AT24C256. Features. Description. Pin Configurations. 128K (16,384 x 8) 256K (32,768 x 8)

Features. Applications

For S1C63 Family Flash microcontroller Multiple-Programming ROM Writer Software (GW63)

74F00 Quad 2-Input NAND Gate

Obsolete Product(s) - Obsolete Product(s)

CD4010C Hex Buffers (Non-Inverting)

Asynchronous SRAM Operating Voltage: 5V Read Access Time: 40 ns Write Cycle Time: 30 ns Very Low Power Consumption (Pre-RAD)

HT93LC56. CMOS 2K 3-Wire Serial EEPROM. Features. General Description. Block Diagram. Pin Assignment

Is Now Part of To learn more about ON Semiconductor, please visit our website at

MC74F620 MC74F623 OCTAL BUS TRANSCEIVER WITH 3-STATE OUTPUTS (INVERTING AND NONINVERTING)

1-megabit (64K x 16) 5-volt Only Flash Memory AT49F1024 AT49F1025

When is Data Susceptible to Corruption

MX23L M-BIT MASK ROM (8/16-BIT OUTPUT) FEATURES PIN CONFIGURATION PIN DESCRIPTION 44 SOP ORDER INFORMATION

PI3B3253. Description. Features. Pin Configuration (QSOP, TSSOP) Block Diagram. Pin Configuration (UQFN) Truth Table (1)

Features INSTRUCTION DECODER CONTROL LOGIC AND CLOCK GENERATORS COMPARATOR AND WRITE ENABLE EEPROM ARRAY READ/WRITE AMPS DATA IN/OUT REGISTER 16 BITS

Design Kit (for ANSOFT Designer TM / Nexxim TM ) User s Manual

Two-wire Serial EEPROM Smart Card Modules 128K (16,384 x 8) 256 (32,768 x 8) AT24C128SC AT24C256SC. Features. Description VCC NC

VSS VSS D15/A-1 D7 D14 D6 D13 D5 D12 D4 VCC VCC VSS VSS NC A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 CE BYTE A16 A15 A14 A13 A12 A11 A10 A19 VSS A21 A20

3. Absolute Maximum Ratings (Note) (Unless otherwise specified, T a = 25 ) Symbol V ESD. P PK I PP T j T stg

Old Company Name in Catalogs and Other Documents

FSA. Library Link. Rev.1.0

Battery-Voltage. 256K (32K x 8) Parallel EEPROMs AT28BV256. Features. Description. Pin Configurations

Is Now Part of To learn more about ON Semiconductor, please visit our website at

TCS40DPR. Digital Output Magnetic Sensor. Feature. Marking Pin Assignment (Top View) Function Table PA8

DF2B6M4SL DF2B6M4SL. 1. General. 2. Applications. 3. Features. 4. Packaging Rev.4.0. Start of commercial production

1.8V/3.0V Single-PLL Clock Generator AK8150C

CD4023BC Buffered Triple 3-Input NAND Gate

DDR-3 DIMM Vertical Mount Socket

TA75W393FU TA75W393FU. Dual Voltage Comparator. Features. Marking (Top View) Pin Connection (Top View)

1.8V/3.0V Single-PLL Clock Generator

FM24C04A/08A 2-Wire Serial EEPROM

ICS548A-03 LOW SKEW CLOCK INVERTER AND DIVIDER. Description. Features. Block Diagram DATASHEET

SEIKO EPSON CORPORATION

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74LCXR163245FT

Transcription:

HD74HC09 Quad. 2-input AND Gates (with open drain outputs) Features High Speed Operation: t pd = 8 ns typ (C L = 50 pf) High Output Current: Fanout of 10 LSTTL Loads Wide Operating Voltage: V CC = 2 to 6 V Low Input Current: 1 µa max Low Quiescent Supply Current: I CC (static) = 1 µa max (Ta = 25 C) Pin Arrangement 1A 1 14 V CC 1B 2 13 4B 1Y 3 12 4A 2A 4 11 4Y 2B 5 10 3B 2Y 6 9 3A GND 7 8 3Y (Top view)

HD74HC09 DC Characteristics Ta = 40 to Ta = 25 C +85 C Item Symbol V CC (V) Min Typ Max Min Max Unit Test Conditions Input voltage V IH 2.0 1.5 1.5 V 4.5 3.15 3.15 6.0 4.2 4.2 V IL 2.0 0.5 0.5 V 4.5 1.35 1.35 6.0 1.8 1.8 Output voltage V OL 2.0 0.0 0.1 0.1 V Vin = V IH or V IL I OL = 20 µa Off-state output current 4.5 0.0 0.1 0.1 6.0 0.0 0.1 0.1 4.5 0.26 0.33 I OL = 4 ma 6.0 0.26 0.33 I OL = 5.2 ma Io (off) 6.0 ±0.5 ±5.0 µa Vin = V IH or V IL Vout = V CC or GND Input current Iin 6.0 ±0.1 ±1.0 µa Vin = V CC or GND Quiescent supply current I CC 6.0 1.0 10 µa Vin = V CC or GND, Iout = 0 µa AC Characteristics (C L = 50 pf, Input t r = t f = 6 ns) Ta = 40 to Ta = 25 C +85 C Item Symbol V CC (V) Min Typ Max Min Max Unit Test Conditions Propagation delay t PLH 2.0 90 115 ns time 4.5 10 18 23 6.0 15 20 t PHL 2.0 90 115 ns 4.5 6 18 23 6.0 15 20 Output fall time t THL 2.0 75 95 ns 4.5 5 15 19 6.0 13 16 Input capacitance Cin 5 10 10 pf 2

19.20 20.32 Max 14 8 6.30 7.40 Max 1 1.30 7 2.39 Max 2.54 ± 0.25 0.48 ± 0.10 0.51 Min 2.54 Min 5.06 Max 0 15 0.25 7.62 + 0.10 0.05 DP-14 0.97 g

10.06 10.5 Max 14 8 1.42 Max 1.27 *0.42 ± 0.08 0.40 ± 0.06 0.10 ± 0.10 2.20 Max 5.5 1 7 0.15 *0.22 ± 0.05 0.20 ± 0.04 + 0.20 7.80 0.30 1.15 0.70 ± 0.20 0 8 *Dimension including the plating thickness Base material dimension 0.12 M FP-14DA 0.23 g

8.65 9.05 Max 14 8 3.95 1 7 1.27 *0.40 ± 0.06 0.635 Max 0.14 + 0.04 0.11 1.75 Max *0.20 ± 0.05 6.10 + 0.10 0.30 1.08 0.60 + 0.67 0.20 0 8 0.15 0.25 M *Pd plating FP-14DN 0.13 g

5.00 5.30 Max 14 8 *0.22 +0.08 0.07 0.20 ± 0.06 1 7 0.65 0.13 M 0.83 Max 4.40 6.40 ± 0.20 1.0 1.10 Max 0.10 *0.17 ± 0.05 0.15 ± 0.04 0.07 +0.03 0.04 0 8 0.50 ± 0.10 *Dimension including the plating thickness Base material dimension TTP-14D 0.05 g

Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi s or any third party s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/e/product/sicd_frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Stra e 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.