2SB727(K) Silicon PNP Epitaxial. Medium speed and power switching complementary pair with 2SD768(K) Base 2. Collector (Flange) 3.

Similar documents
1SS286. Silicon Schottky Barrier Diode for Various Detector, High Speed Switching

2SK2220, 2SK2221. Silicon N-Channel MOS FET. ADE (Z) 1st. Edition Mar Application. Features. Outline

HZ-P Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter

1S2075(K) Silicon Epitaxial Planar Diode for High Speed Switching. ADE A (Z) Rev. 1 Aug Features. Ordering Information.

1SS106. Silicon Schottky Barrier Diode for Various Detector, High Speed Switching

2SK1056, 2SK1057, 2SK1058

Unit: mm Max Max Max Min 5.06 Max Min ± ± 0.10

2SK213, 2SK214, 2SK215, 2SK216

HSM88WK. Proof against high voltage. MPAK package is suitable for high density surface mounting and high speed assembly.

HSM107S. Silicon Schottky Barrier Diode for System Protection. ADE F(Z) Rev 6 Sep Features. Ordering Information.

HZM6.8WA. Silicon Epitaxial Planar Zener Diode for Surge Absorb. ADE A(Z) Rev 1 Feb. 1, Features. Ordering Information.

2SK439. Silicon N-Channel MOS FET. Application. Outline. VHF amplifier SPAK. 1. Gate 2. Source 3. Drain

HD74HC174. Hex D-type Flip-Flops (with Clear) ADE (Z) 1st. Edition Sep Description. Features. Function Table

2SK522. Silicon N-Channel Junction FET. Application. Outline. VHF amplifier, Mixer, local oscillator SPAK. 1. Gate 2. Source 3.

2SD2103. Silicon NPN Triple Diffused. Application. Outline. Low frequency power amplifier TO-220FM Base 2. Collector 3. Emitter 2.

HD74HC74. Dual D-type Flip-Flops (with Preset and Clear)

HD74HC00. Quad. 2-input NAND Gates. Features. Pin Arrangement

HD74HC273. Octal D-type Flip-Flops (with Clear) ADE (Z) 1st. Edition Sep Description. Features. Function Table

HD74HC09. Quad. 2-input AND Gates (with open drain outputs) Features. Pin Arrangement

HD74AC240/HD74ACT240

HD74HC bit Parallel-out Shift Register. ADE (Z) 1st. Edition Sep Description. Features. Function Table

HD74HC of-8-line Data Selector/Multiplexer. Description. Features. Function Table

HL6321G/22G. AlGaInP Laser Diodes

Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.

Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.

Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.

2SJ76, 2SJ77, 2SJ78, 2SJ79

Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply. Type No. Mark Package Code HZS Series Type No. MHD B 7

HM6264B Series. 64 k SRAM (8-kword 8-bit)

RN1601, RN1602, RN1603 RN1604, RN1605, RN1606

HL6319G/20G. 638nm / 10mW AlGaInP Laser Diode

RN1101MFV,RN1102MFV,RN1103MFV RN1104MFV,RN1105MFV,RN1106MFV

Silicon Planar Zener Diode for Low Noise Application. Part No. Cathode Band Package Name Package Code HZ-L Series Navy blue DO-35 GRZZ0002ZB-A 7 B 2

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

TP805 OPTO INTERRUPTER

2PB709ARL; 2PB709ASL

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PNP 500 ma, 50 V resistor-equipped transistor; R1 = 2.2 kω, R2 = open

TOSHIBA Zener Diode Silicon Epitaxial Type. CRY62 to CRZ39

TD62M8600FG TD62M8600FG 8CH LOW SATURATION VOLTAGE SOURCE DRIVER FEATURES SCHEMATICS PIN CONNECTION (TOP VIEW)

CRY62~CRZ47 CRY62~CRZ47. Applications: Communication, Control and Measurement Equipment Constant Voltage Regulation Transient Suppressors

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

1Z6.2~1Z390, 1Z6.8A~1Z30A

3. Absolute Maximum Ratings (Note) (Unless otherwise specified, T a = 25 ) Symbol V ESD. P PK I PP T j T stg

BD135/137/139. Symbol Parameter Test Condition Min. Typ. Max. Units V CEO (sus) Collector-Emitter Sustaining Voltage : BD135 : BD137 : BD139

Old Company Name in Catalogs and Other Documents

Old Company Name in Catalogs and Other Documents

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

Outline Drawings [mm] Connection diagram TFP. Item Symbols Conditions Ratings Units Repetitive peak reverse voltage VRRM 120 V

DF10G7M1N DF10G7M1N. 1. Applications. 2. Packaging and Internal Circuit Rev.5.0. Start of commercial production

DF2S6.8FS DF2S6.8FS. 1. Applications. 2. Packaging and Internal Circuit Rev.5.0. Start of commercial production.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

DUAL REVERSIBLE MOTOR DRIVER MB3863

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

DATA SHEET ZENER DIODES 1 W DO-41 GLASS SEALED PACKAGE

DF2B6M4SL DF2B6M4SL. 1. General. 2. Applications. 3. Features. 4. Packaging Rev.4.0. Start of commercial production

TD62382AP,TD62382AF TD62382AP/AF 8CH LOW INPUT ACTIVE SINK DRIVER FEATURES PIN CONNECTION (TOP VIEW) SCHEMATICS (EACH DRIVER)

DF2S16FS DF2S16FS. 1. Applications. 2. Packaging and Internal Circuit Rev Toshiba Corporation

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

CRY62~CRZ47 CRY62~CRZ47. Use in Communication, Automation and Measurement Equipment Constant Voltage Regulation Transient Suppressors

300 V, 100 ma PNP high-voltage transistor

TD62384APG,TD62384AFG TD62385APG,TD62385AFG

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

ZENER DIODES RD2.0S to RD150S

BD243/A/B/C. Symbol Parameter Value Units V CBO Collector-Base Voltage : BD243 : BD243A : BD243B : BD243C

Technical Data Sheet 5mm Phototransistor T-1 3/4

TOSHIBA Schottky Barrier Diode CMS16

General Purpose, Low Noise NPN Silicon Bipolar Transistor. Technical Data AT AT-41533

Low Current, High Performance NPN Silicon Bipolar Transistor. Technical Data AT AT-32033

TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CMS05

XBP4SMAJ Series APPLICATIONS FEATURES PIN CONFIGRATION MARKING ABSOLUTE MAXIMUM RATINGS. 400W Transient Voltage Suppressor (TVS) 1/5.

DATA SHEET ZENER DIODES 1.0 W PLANAR TYPE 2-PIN SMALL POWER MINI MOLD. Parameter Symbol Ratings Unit Remarks

FM1233A 3-Pin µc Supervisor Circuit

Zener diode TDZ30 TDZ30. Diodes. Rev.D 1/4. Applications Dimensions (Unit : mm) Land size figure (Unit : mm) Constant voltage control

Old Company Name in Catalogs and Other Documents

Technical Data Sheet 3mm Phototransistor T-1

Technical Data Sheet 3mm Phototransistor T-1

45 V, 100 ma NPN general-purpose transistors

02DZ2.0~02DZ24 02DZ2.0~02DZ24. Constant Voltage Regulation Applications Reference Voltage Applications. Maximum Ratings (Ta = 25 C)

02DZ2.0~02DZ24 02DZ2.0~02DZ24. Constant Voltage Regulation Applications Reference Voltage Applications. Absolute Maximum Ratings (Ta = 25 C)

SMP75. Trisil for telecom equipment protection. Features. Description. Applications. Benefits

NSVF4015SG4. RF Transistor for Low Noise Amplifier. 12 V, 100 ma, f T = 10 GHz typ.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

Zener diode KDZ22B KDZ22B. Diodes. Rev.F 1/4. Applications Dimensions (Unit : mm) Land size figure (Unit : mm) Voltage regulation

DZ L Silicon epitaxial planar type

Packaging 1. Cathode 2. Anode V Zener operating resistance. 120 Reverse current IR VR = 1 V

TA75W393FU TA75W393FU. Dual Voltage Comparator. Features. Marking (Top View) Pin Connection (Top View)

BAT42W/BAT43W SURFACE MOUNT SCHOTTKY BARRIER DIODE

Zener diode CDZ3.6B CDZ3.6B. Diodes 1/4. Applications Dimensions (Unit : mm) Land size figure (Unit : mm) Constant voltage control

Is Now Part of. To learn more about ON Semiconductor, please visit our website at

Maintenance/ Discontinued

Dimensions (Unit : mm) Each lead has same dimension. ROHM : UMD4 JEDEC : SOT-343 JEITA : SC-82 dot (year week factory) 1Pin Mark

Technical Data Sheet Opto Interrupter

DZ2S180C0L Silicon epitaxial planar type

TCS40DPR. Digital Output Magnetic Sensor. Feature. Marking Pin Assignment (Top View) Function Table PA8

SOD-723 Electrostatic discharge *2 ESD ±30 kv Junction temperature Tj 150 C

Transcription:

Silicon PNP Epitaxial ADE-208-857 (Z) 1st. Edition Sep. 2000 Application Medium speed and power switching complementary pair with 2SD768(K) Outline TO-220AB 2 1 1 2 1. Base 2. Collector (Flange). Emitter 1 kω (Typ) 400 Ω (Typ) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage V CBO 120 V Collector to emitter voltage V CEO 120 V Emitter to base voltage V EBO 7 V Collector current I C 6 A Collector peak current I C(peak) 10 A Collector power dissipation P C * 1 40 W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Note: 1. Value at T C = 25 C

Electrical Characteristics (Ta = 25 C) Item Symbol Min Typ Max Unit Test conditions Collector to emitter breakdown V (BR)CEO 120 V I C = 25 ma, R BE = voltage Emitter to base breakdown voltage V (BR)EBO 7 V I E = 50 ma, I C = 0 Collector cutoff current I CBO 100 µa V CB = 120 V, I E = 0 I CEO 10 µa V CE = 100 V, R BE = DC current transfer ratio h FE 1000 20000 V CE = V, I C = A* 1 Collector to emitter saturation V CE(sat)1 1.5 V I C = A, I B = 6 ma* 1 voltage V CE(sat)2.0 V I C = 6 A, I B = 60 ma* 1 Base to emitter saturation V BE(sat)1 2.0 V I C = A, I B = 6 ma* 1 voltage V BE(sat)2.5 V I C = 6 A, I B = 60 ma* 1 Turn on time t on 1.0 µs I C = A, I B1 = I B2 = 6 ma Turn off time t off.0 µs Note: 1. Pulse test Collector power dissipation Pc (W) 60 40 20 Maximum Collector Dissipation Curve 0 50 100 150 Case Temperature T C ( C) Collector Current I C (A) 0 10 1.0 0. 0.1 Area of Safe Operation I C (max) (Continuous) i C (peak) Ta = 25 C 1 Shot pulse DC Operation (T C = 25 C) PW = 10 ms 0.0 1 10 0 100 00 1,000 Collector to emitter Voltage V CE (V) 1 ms 1 µs 100 µs 2

Collector Current I C (A) 5 4 2 1 Typical Output Characteristics T C = 25 C 0.9 0.8 0.6 0.5 0.4 0. 0.2 0.7 I B = 0.1 ma 0 1 2 4 5 Collector to emitter Voltage V CE (V) DC current transfer ratio h FE 10,000,000 1,000 00 DC Current Transfer Ratio vs. Collector Current T C = 75 C 25 25 V CE = V 100 0.1 0. 1.0 10 Collector current I C (A) Collector to emitter saturation voltage V CE (sat) (V) Base to emitter saturation voltage V BE (sat) (V) Saturation Voltage vs. Collector Current 10 1.0 0. V BE (sat) T C = 25 C V CE (sat) l C /l B = 200 l C /l B = 1,000 1,000 200 500 0.1 0.1 0. 1.0 10 Collector current I C (ma) 500 Switching time t (µs) 10 1.0 0. 0.1 Switching Time vs. Collector Current V CC = 0 V 0.0 I CC = 500 I B1 = 500 I B2 Ta = 25 C 0.01 0.1 0. 1.0 10 Collector current I C (ma) t f t on t stg

Thermal resistance θ j-c ( C/W) 10 1.0 0. 0.1 0.0 Transient Thermal Resistance 1-1,000 s 1-1,000 ms T C = 25 C 0.01 1 10 100 1,000 (s) 1 10 100 1,000 (ms) Time t 4

Package Dimensions Unit: mm 11.5 MAX 2.79 ± 0.2 10.16 ± 0.2 9.5 8.0 φ.6 +0.1-0.08 4.44 ± 0.2 1.26 ± 0.15 18.5 ± 0.5 7.8 ± 0.5 1.27 6.4 +0.2 0.1 1.5 MAX 0.76 ± 0.1 14.0 ± 0.5 15.0 ± 0. 2.7 MAX 2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) TO-220AB Conforms Conforms 1.8 g 5

Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi s or any third party s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (0) 270-2111 Fax: (0) 270-5109 URL NorthAmerica : http://semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia : http://sicapac.hitachi-asia.com Japan : http://www.hitachi.co.jp/sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 9514 Tel: <1> (408) 4-1990 Fax: <1>(408) 4-022 Hitachi Europe GmbH Electronic Components Group Dornacher Straβe D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 0 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 04918 Tel : <65>-58-65/58-8577 Fax : <65>-58-69/58-877 URL : http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-666 Fax : <886>-(2)-2718-8180 Telex : 2222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-75-9218 Fax : <852>-(2)-70-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 6