HZ-P Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter

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Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter ADE-208-123D (Z) Rev.4 Sep. 2000 Features Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. Glass package DO-41 structure ensures high reliability. Ordering Information Type No. Mark Package Code Type No. DO-41 Outline 2.0 1 B 2 Type No. Cathode band 1. Cathode 2. Anode

Absolute Maximum Ratings (Ta = 25 C) Item Symbol Value Unit Power dissipation Pd 0.8 W Junction temperature Tj 175 C Storage temperature Tstg 55 to +175 C Electrical Characteristics (Ta = 25 C) Zener Voltage Reverese Current Dynamic Resistance V Z (V)* 1 I R (µa) r d (Ω) Type Grade Min Max I Z (ma) Max V R (V) Max I Z (ma) HZ2.0 BP 1.88 2.12 40 200 0.5 25 40 CP 2.00 2.24 HZ2.2 BP 2.08 2.33 40 200 0.7 20 40 CP 2.20 2.45 HZ2.4 BP 2.28 2.56 40 200 1.0 15 40 CP 2.40 2.70 HZ2.7 BP 2.5 2.9 40 200 1.0 15 40 CP 2.7 3.1 HZ3.0 BP 2.8 3.2 40 0 1.0 15 40 CP 3.0 3.4 HZ3.3 BP 3.1 3.5 40 80 1.0 15 40 CP 3.3 3.7 HZ3.6 BP 3.4 3.8 40 60 1.0 15 40 CP 3.6 4.0 HZ3.9 BP 3.7 4.1 40 40 1.0 15 40 CP 3.9 4.4 HZ4.3 BP 4.0 4.5 40 20 1.0 15 40 CP 4.3 4.8 HZ4.7 BP 4.4 4.9 40 20 1.0 40 CP 4.7 5.2 Note: 1. ed with DC. Rev.4, Sep. 2000, page 2 of 8

Electrical Characteristics (cont) (Ta = 25 C) Zener Voltage Reverese Current Dynamic Resistance V Z (V)* 1 I R (µa) r d (Ω) Type Grade Min Max I Z (ma) Max V R (V) Max I Z (ma) HZ5.1 BP 4.8 5.4 40 20 1.0 8 40 CP 5.1 5.7 HZ5.6 BP 5.3 6.0 40 20 1.5 8 40 CP 5.6 6.3 HZ6.2 BP 5.8 6.6 40 20 3.0 6 40 CP 6.2 7.0 HZ6.8 BP 6.4 7.2 40 20 3.5 6 40 CP 6.8 7.7 HZ7.5 BP 7.0 7.9 40 20 4.0 4 40 CP 7.5 8.4 HZ8.2 BP 7.7 8.7 40 20 5.0 4 40 CP 8.2 9.3 HZ9.1 BP 8.5 9.6 40 20 6.0 6 40 CP 9.1.2 HZ BP 9.4.6 40 7.0 6 40 CP.0 11.2 HZ11 BP.4 11.6 20 8.0 8 20 CP 11.0 12.3 HZ12 BP 11.4 12.6 20 9.0 8 20 CP 12.0 13.5 HZ13 BP 12.4 14.1 20.0 20 CP 13.3 15.0 HZ15 BP 13.8 15.6 20 11.0 20 CP 14.7 16.5 HZ16 BP 15.3 17.1 20 12.0 12 20 CP 16.2 18.3 HZ18 BP 16.8 19.1 20 13.0 12 20 CP 18.0 20.3 HZ20 BP 18.8 21.2 20 15.0 14 20 CP 20.0 22.4 Note: 1. ed with DC. Rev.4, Sep. 2000, page 3 of 8

Electrical Characteristics (cont) (Ta = 25 C) Zener Voltage Reverese Current Dynamic Resistance V Z (V)* 1 I R (µa) r d (Ω) Type Grade Min Max I Z (ma) Max V R (V) Max I Z (ma) HZ22 BP 20.8 23.3 17.0 14 CP 22.0 24.5 HZ24 BP 22.8 25.6 19.0 16 CP 24.0 27.6 HZ27 BP 25.1 28.9 21.0 16 CP 27.0 30.8 HZ30 BP 28.0 32.0 23.0 18 CP 30.0 34.0 HZ33 BP 31.0 35.0 25.0 18 CP 33.0 37.0 HZ36 BP 34.0 38.0 27.0 20 CP 36.0 40.0 Notes: 1. ed with DC. 2. Type No. is as follows; HZ2.0BP, HZ2.0CP, HZ36BP, HZ36CP. Rev.4, Sep. 2000, page 4 of 8

Main Characteristic -1 HZ2.7BP HZ3.0BP -2-3 HZ5.1BP HZ18BP HZ24BP HZ36BP Zener Current I Z (A) -4-5 -6-7 -8 0 5 15 20 25 30 35 40 Zener Voltage V Z (V) 45 Fig.1 Zener current Vs. Zener voltage 0. 50 1.0 Zener Voltage Temperature Coefficient (%/ C) z γ 0.08 0.06 0.04 0.02 0 0.02 0.04 0.06 %/ C mv/ C 40 30 20 0 20 30 Zener Voltage Temperature Coefficient γ z (mv/ C) Power Dissipation P (W) d 0.8 0.6 0.4 0.2 l=mm without heat sink l l l=5mm l=mm l=25mm 0.08 0. 50 0 5 15 20 25 30 35 40 Zener Voltage V Z (V) 40 Infinite Heat Sink Plate 0 0 50 0 150 Ambient Temperature Ta ( C) 200 Fig.2 Temperature Coefficient Vs. Zener voltage Fig.3 Power Dissipation Vs. Ambient Temperature Rev.4, Sep. 2000, page 5 of 8

Nonrepetitive Surge Reverses Power P RSM (W) 4 3 2 1.0 t P RSM Ta = 25 C nonrepetitive HZ3.0BP HZ18BP HZ36BP -5-4 -3-2 -1 1.0 Time t (s) Fig.4 Surge Reverse Power Ratings (Reference Data) Transient Thermal Impedance Z th ( C/W) 3 2 Infinite Heat Sink Plate 1.0 3 2 1 1.0 2 3 Time t (s) Fig.5 Transient Thermal Impedance HZ36BP HZ2.7BP HZ18BP mm mm Rev.4, Sep. 2000, page 6 of 8

Package Dimensions Unit: mm 26.0 Min 5.2 Max 26.0 Min φ0.8 φ 3.0 Hitachi Code JEDEC EIAJ Mass (reference value) DO-41 Conforms Conforms 0.38 g Rev.4, Sep. 2000, page 7 of 8

Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi s or any third party s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi s sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 0-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-59 URL NorthAmerica : http://semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia : http://sicapac.hitachi-asia.com Japan : http://www.hitachi.co.jp/sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher Straße 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (5), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 4.0 Rev.4, Sep. 2000, page 8 of 8