The 3D-Memory Evolution ISC 2015 /, Director Marcom + SBD EMEA
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Samsung Memory More Speed. Less Energy.
The Density / Bandwidth / Performance Challenge Stacked DRAM is needed to meet density requirements due to slow scaling TSV 3DS DRAM can meet both high density and speed requirements Slowdown in Capacity Growth Rate Perf. Limitation of Conv. Stack Tech. Module Density 32GB Introduction 64GB Introduction Yearly Speed Requirement [Mbps] Speed Requirement 2993 DRAM Density 2667 4Gb 8Gb 2400 2Gb 32GB= 2Gb 4stack 4Gb 2stack 64GB= 4Gb 4stack 8Gb 2stack 2133 DDP Speed Limit 2002 2004 2006 2008 2010 2012 2014 2016 2018 2014 2015 2016 2017
Samsung TSV 3DS Technology for Next Gen. DRAM TSV 3DS is stacked DRAM dies with Through-Silicon-Via connections Conventional Stack Solutions <QDP Wire-bond Package> TSV Solutions <4H TSV Package> RDL 2) Wire-Bond Slave Chip Master Chip TSV VIA <QDP LRDIMM> <3DS TSV RDIMM> Memory Controller Data Buffer DRAM Memory Controller Integrated Buffer Less I/O power DRAM (Master) Number of loading limits high speed operations Only master chip communicates with controller regardless of number of stacking 6 / 16 1) 3DS: 3 Dimensional Stack 2) RDL: Re-Distribution Layer
*3DS TSV DRAM More Bandwith at High Densities Conventional Stack DRAM 3DS 4H DRAM (TSV) Improved Turn-around Time I/O buffer on DIMM causes inefficiencies Seamless Read/Write among DRAMs Improved Bandwidth 2.400 Mbps DDP Speed Limit 2.993 2.667 2.400 Mbps Ability to follow upcoming requirements 9.9W Improved Energy Efficiency DIMM power for 1 DIMM per channel 7.5W DIMM power for 1 DIMM per channel
System Power[Watt] System Power Bandwidth[GB/s] PoC Results with Real-world HPC Servers and Workloads Lenovo-Samsung-SAP carried out PoC and DDR4 3DS TSV RDIMM consumes 30% less power than DDR3 QDP LRDIMM in SAP HANA scenario ATOS-Samsung PoC demonstrates that DDR4 3DS TSV RDIMM provides 36% more bandwidth at 27% less power consumption Lenovo-Samsung-SAP PoC ATOS-Samsung PoC High-Volume Order-to-Cash SAP S/4HANA Scenario 25M memory allocation/de-allocation, Memory Speed 1333Mbps* 288 240 176 128 112 76 256 224 168 DDR4 3DS RDIMM 1600 (POR+1) DDR4 3DS RDIMM 1333 (POR) DDR3 QDP LRDIMM 1066 (POR) Time DDR4 3DS RDIMM @ HSW(CPU 50%) DDR3 QDP LRDIMM @ IVB (CPU 80%) DDR3 QDP LRDIMM @ HSW (CPU 50%) -Haswell-EX Server, 4 CPU, 96DIMMs *DDR3 LRDIMM POR speed is 1066Mbps. 1720 1700 1640 1620 1720 1680 2340 2220 2360 -Measurements were obtained on a 4 socket systems with 96 DIMMs of 64GB capacity
High Bandwidth TSV DRAM Solution HBM Memory Bandwidth HBM is TSV stacked DRAM with a silicon interconnect to the processor High bandwidth through a wide data bus, enabled by TSV and a Silicon Interposer HBM and Bandwidth Requirement 300 [GB/s] HBM(High Bandwidth Memory) Buffer-die(Logic)+Core-die(DRAM) Processor DRAM Logic Si Interposer DDR3/4, WIO2 2015 2016 2017 2018 2019 HBM GDDR5 HBM x4ea (1TB/s, 2Gbps) GDDR5 x12ea (384GB/s, 8Gbps) Bandwidth and Power Gains [GB/s] 17,1 19,2 240 288 512 DDR3 DDR4 GDDR5 GDDR5 HBM [(GB/s)/Watt] GDDR5 5Gbps Bandwidth Trend HBM Enables Bandwidth of 512GB/s Bandwidth/Power GDDR5 6Gbps 1.8x higher 1.9x higher HBM
A complete SSD Lineup for every Task Adapted to different workloads and all in 3D V-NAND: SATA SAS PCIe High End DB / Application Server Cloud Server, Storage SM863 PM1635 PM1725 Main Stream CDN, VoD, Web, File Server PM863 PM1633 PM953
LP-NVMe SSD For Big Data and Hyperscale Needs SAMSUNG low power NVMe SSD is widely deployed in hyperscale data centers and big data analytics systems NVMe SSD vs. SATA SSD 480/960/1920 GB IOPS SATA SSD NVMe SSD 1.9 x Higher 3.2 x Higher High Performance (SM953- Seq. R/W: 1.75/0.85 GB/s) Low Active Power < 8W Database OLTP Decision Support System
Ultra Highend Performance: Enterprise Class NVMe SSD World 1 st NVMe in 2014 and 2 nd gen. NVMe was released early this year SAMSUNG NVMe SSD demonstrates ultra low latency and high performance The Benefits of NVMe SSD Low Latency High Performance 1.6/3.2/6.4TB SAS SSD NVMe SSD 2.1 x Faster 4 x Higher 3.4 x Higher World 1 st NVMe SSD in 2014 High Performance (SM1715- Seq. R/W: 3/2.2 GB/s) Affordable Endurance by V-NAND Latency Ran. Read Ran. Write
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