FEATURES Print What is 3D V-NAND and how does it differ from existing technology? Samsung s unique and innovative 3D V-NAND ash memory architecture is a breakthrough in overcoming the density limitations, performance and endurance of today s conventional planar NAND architecture. 3D V-NAND is fabricated by stacking 32 cell layers vertically over one another rather than decreasing the cells dimensions and trying to t itself onto a xed horizontal space resulting in higher density and better performance utilising a smaller footprint. Optimise daily computing with TurboWrite technology for unrivalled read/write speeds Achieve the ultimate read/write performance to maximise your everyday computing experience with
Samsung s TurboWrite technology. You not only obtain more than a 10% better user experience than 840 EVO* but up to 1.9x faster random write speeds for 120/250 GB models** as well. The 850EVO delivers the top of its class performance in sequential read (540 MB/s) and write (520 MB/s) speeds. Plus, you also gain optimised random performance in all QD for client PC usage scenario. * PCmark7 (250 GB ): 6,700 (840 EVO) > 7,600 (850 EVO) ** Random Write (QD32,120 GB): 36,000 IOPS (840 EVO) > 88,000 IOPS (850 EVO) Get into the fast lane with the improved RAPID mode Samsung s Magician software which provides Rapid Mode for 2x faster processing data speeds* on a system level by utilising unused PC memory (DRAM) as cache storage. The newest Magician increased the maximum memory usage in Rapid mode from 1 GB, in the previous 840 EVO version, to up to 4 GB with the 850 EVO when implementing 16 GB of DRAM. You also get a 2x performance* boost in all random Queue depth. * PCMARK7 RAW (250 GB): 7,500 > 15,000 (Rapid mode)
Guaranteed endurance and reliability bolstered by 3D V-NAND technology The 850 EVO delivers guaranteed endurance and reliability by doubling the TBW* compared to the previous generation 840 EVO** backed by an industry leading 5 year warranty. The 850 EVO through minimised performance degradation allows sustained performance improvements of up to 30% over the 840 EVO proving to be one of the most dependable storage devices***. * TBW: Total Bytes Written ** TBW: 43 (840 EVO) > 75 (850 EVO 120/250 GB),150 (850 EVO 500/1TB) *** Sustained Performance (250 GB): 3,300 IOPS (840 EVO) > 6,500 IOPS (850 EVO), Performance measured after 12 hours Random Write test Compute longer with improved energy efficiency backed by 3D V-NAND
The 850 EVO delivers signi cantly longer battery life on your notebook with a controller optimised for 3D V- NAND now enabling Device Sleep at a highly efficient 2mW. The 850 EVO is now 25% more power efficient to the 840 EVO during write operations* thanks to 3D V-NAND only consuming half the energy than that of Planar 2D NAND. * Power (250 GB): 3.2 Watt (840 EVO) > 2.4 Watt (850 EVO) Secure valuable data The 850 EVO comes forti ed with the latest hardware-based full disk encryption engine. Protect against overheating The 850 EVO s Dynamic Thermal Guard constantly monitors and maintains ideal temperatures for the drive to operate in optimal conditions for the integrity of your data.
Level up to 850 EVO without any hassle In three simple steps the Samsung s One-stop Install Navigator software easily allows you to migrate all the data and applications from the existing primary storage to the 850 EVO. Acquire an integrated in-house solution Samsung is the only SSD brand to design and manufacture all its components in-house allowing complete optimised integration.