How to migrate to Numonyx Axcell M29EW (SBC) from Spansion S29GL flash (32-, 64- and 128-Mbit) Application Note May 2010

Similar documents
AN2685 Application note

AN3102 Application note

Conversion Guide (256-Mbit): Numonyx Embedded Flash Memory (J3 v. D, 130 nm) to Numonyx StrataFlash Embedded Memory (J3-65 nm)

AN2663 Application note

Technical Note. Migrating from S29GL-S Devices to MT28FW NOR Flash Devices. Introduction. TN-13-41: Migrating S29GL-S to MT28FW NOR Flash Devices

AN Migration Guide

AN Migration Guide

Technical Note. Migrating from Micron M29W Devices to MT28EW NOR Flash Devices. Introduction. TN-13-50: Migrating M29W to MT28EW NOR Flash Devices

Migration Guide for Numonyx StrataFlash Wireless Memory (L18/L30) to Numonyx StrataFlash Embedded Memory (P30)

NAND32GW3F4A. 32-Gbit (4 x 8 Gbits), two Chip Enable, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories.

Migrating from Macronix MX29GL-G/F and MX68GL-G Devices to MT28EW NOR Flash Devices

Migration Guide: Numonyx StrataFlash Embedded Memory (P30) to Numonyx StrataFlash Embedded Memory (P33)

Migrating from S29GL-S Device to MT28EW NOR Flash Device MT28EW NOR Flash Devices

Migrating from Spansion Am29F to Micron M29F NOR Flash Memories

3 Volt Intel StrataFlash Memory to Motorola MC68060 CPU Design Guide

Conversion Guide: Numonyx StrataFlash Wireless Memory (L18) 130 nm to 65 nm

Spansion* Flash Memory to Numonyx StrataFlash Wireless Memory (L) Migration Guide Application Note #309205

S29GL064S MirrorBit Eclipse Flash

3 Volt Intel StrataFlash Memory to i960 H CPU Design Guide

This user manual describes the VHDL behavioral model for NANDxxxxxBxx flash memory devices. Organization of the VHDL model delivery package

Parallel NOR Flash Embedded Memory

S29GL-N MirrorBit Flash Family

S29GL01GS/S29GL512S S29GL256S/S29GL128S 1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/ 256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte), 3.0 V, GL-S Flash Memory

Common Flash Interface (CFI) and Command Sets

Parallel NOR Flash Embedded Memory

Publication Number S29GLxxxP_00 Revision A Amendment 0 Issue Date October 29, 2004

GL-S MirrorBit Eclipse Flash Non-Volatile Memory Family

1 Gbit (128 Mbyte), 512 Mbit (64 Mbyte) GL-T MirrorBit Eclipse Flash

S70GL-S MirrorBit Eclipse Flash Non-Volatile Memory Family

M29W320DT M29W320DB. 32 Mbit (4Mbx8 or 2Mbx16, Non-uniform Parameter Blocks, Boot Block), 3V Supply Flash memory. Feature summary

Migration Guide: Numonyx Synchronous StrataFlash Memory (K3) to Numonyx StrataFlash Wireless (L18/L30) Memory

Maximum Read Access Times Random Access Time (t ACC ) Page Access Time (t PACC )

Parallel NOR Flash Automotive Memory

Application Note Software Device Drivers for the M29Fxx Flash Memory Device

Legal Lines and Disclaimers INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH NUMONYX PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL

Distinctive Characteristics. Datasheet. Architectural Advantages. Software & Hardware Features. Performance Characteristics PRELIMINARY

Comparing Spansion S29AL016J with Macronix MX29LV160D

Comparing Spansion S29AL008J with Macronix MX29LV800C

APPLICATION NOTE Using the Intel StrataFlash Memory Write Buffer

Am29LV640MH/L Data Sheet

S29GL-A MirrorBit Flash Family

Numonyx Axcell P33-65nm Flash Memory

Numonyx Axcell TM Flash Memory (P30-65nm)

Forging a Future in Memory: New Technologies, New Markets, New Applications. Ed Doller Chief Technology Officer

DatasheetDirect.com. Visit to get your free datasheets. This datasheet has been downloaded by

3 VOLT FlashFile MEMORY 28F004S3, 28F008S3, 28F016S3 SPECIFICATION UPDATE. Release Date: February, Order Number:

cfeon Top Marking Example: cfeon Part Number: XXXX-XXX Lot Number: XXXXX Date Code: XXXXX

GL-S MirrorBit Eclipse Flash Non-Volatile Memory Family

Parallel NOR Flash Automotive Memory

Quick Guide to Common Flash Interface

Replacing Spansion S29GL_S with Macronix MX29GL_F

Am29LV640MT/B Data Sheet

Am29LV320MT/B Data Sheet

S29AL008J. 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory. Data Sheet

IS29GL Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only FEATURES GENERAL DESCRIPTION

Spansion SLC NAND Flash Memory for Embedded

S29JL032H. 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory. Data Sheet

Am29BDD160G Data Sheet

Parallel NOR Flash Embedded Memory

Parallel NOR Flash Automotive Memory

Micron Parallel NOR Flash Embedded Memory

Micron Parallel NOR Flash Embedded Memory

8-Mbit (1M 8-Bit/512K 16-Bit), 3 V, Boot Sector Flash

S29JL064H. 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory. Data Sheet

64 Mbit (8 M x 8-Bit/4 M x 16-Bit), 3 V Simultaneous Read/Write Flash

64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection AT28BV64B

Am29F160D. For More Information Please contact your local sales office for additional information about Spansion memory solutions.

Application Note C Library Source Code for M29W256 Flash Memory Using the Flash Device Driver Software Interface

Parallel NOR and PSRAM 56-Ball MCP Combination Memory

Numonyx Flash Memory (P33-65nm)

Am29DL640G. Data Sheet

Am29F160D. 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS

5 VOLT FlashFile MEMORY 28F004S5, 28F008S5, 28F016S5 (x8) SPECIFICATION UPDATE

Am29DL800B. 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS

Am29LV116D. 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS

Parallel NOR Flash Embedded Memory

S29AL004D. 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory. Data Sheet

Spansion SLC NAND Flash Memory for Embedded

AT49BV004(T) TSOP Top View Type 1 1. AT49BV4096A(T) TSOP Top View Type 1 A16 BYTE GND I/O7 I/O14 I/O6 I/O13 I/O5 I/O12 I/O4 VCC I/O11 I/O3 I/O10 I/O2

Micron Parallel NOR Flash Embedded Memory (P30-65nm)

64 Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 / SST38VF6402 / SST38VF6403 / SST38VF6404

Am29F032B Data Sheet. Continuity of Specifications. For More Information. The following document contains information on Spansion memory products.

S29AL016D. Distinctive Characteristics. 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory.

4-Megabit (512K x 8) 5-volt Only CMOS Flash Memory AT49F040 AT49F040T AT49F040/040T AT49F040/040T. Features. Description. Pin Configurations

1 Gbit, 2 Gbit, 4 Gbit SLC NAND Flash for Embedded

S29GL-P MirrorBit Flash Family

W29GL032C 32M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE. Publication Release Date: August 2, 2013 Revision H

Intel Wireless Flash Memory (W18/W30 SCSP)

Not Recommended for New Design

2Mb Ultra-Low Power Asynchronous CMOS SRAM. Features. Power Supply (Vcc)

Am29LV081B. 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS

8-Mbit (1M 8-Bit/512K 16-Bit), 3 V, Boot Sector Flash

Am29LV800B Data Sheet

S29AL016M. 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) 3.0 Volt-only Boot Sector Flash Memory featuring MirrorBit TM technology. Distinctive Characteristics

64-megabit (4M x 16) 3-volt Only Flash Memory AT49BV642D AT49BV642DT

16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

DatasheetDirect.com. Visit to get your free datasheets. This datasheet has been downloaded by

4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 1.8 Volt-only

Parallel NOR and PSRAM 88-Ball MCP Combination Memory

CAT28C K-Bit Parallel EEPROM

Transcription:

How to migrate to Numonyx Axcell M29EW (SBC) from Spansion S29GL flash (32-, 64- and 128-Mbit) Application Note - 309014 May 2010 Application Note May 2010 1 309014-02

Table of Contents Revision History..................................................... 3 1 Introduction................................................ 4 2 Brief Comparison........................................... 5 3 Hardware Considerations..................................... 6 3.1 Signal Description Difference.................................. 10 3.2 Mechanical Differences....................................... 10 3.3 ICC Difference............................................. 11 3.4 Device Capacitance Difference................................. 12 4 Performance Differences.................................... 13 4.1 Write Performance.......................................... 13 4.2 Power-on and Reset Timings.................................. 13 5 Software Considerations.................................... 15 5.1 Manufacturer ID and Other Autoselect Information................. 15 5.2 Autoselect Entry Comparison.................................. 16 5.3 CFI Difference.............................................. 16 5.4 Password Access........................................... 17 5.5 Power-Loss Recovery........................................ 17 Appendix A Additional Information.................................... 18 309014-02 2

Revision History Revision History Date of Revision Revision Description Jun 2009 Rev01 Initial Release May 2010 Rev02 Updated density to include 32M, 64M and 128M. Updated package, block Architecture information in Table 1: General Feature Comparison. Added 48B BGA and 48L TSOP layout information in Section 3: Hardware Considerations. Added Signal description comparison at Section 3.1: Signal Description Difference. Updated TSOP major dimension comparison in Table 3: TSOP Dimension Comparison. Updated I CC comparison information in Table 4: ICC Comparison. Updated capacitance comparison information in Table 5: Capacitance Comparison. Added a note to state 1µs delay after Error bit (DQ5) set to issue Read/Reset command (F0h). Updated write performance information in Table 6: Write Performance Comparison. Updated power-on and reset timing Comparison information in Table 7: Power-on and Reset Timing Comparison. Update autoselect information comparison information in Table 8: Autoselect Information Comparison (16-bit mode). Added Autoselect Entry Comparison at Section 5.2: Autoselect Entry Comparison. Updated CFI difference comparison information in Table 10: CFI Difference Comparison. Added order number and document/tool information in Section Appendix A: Additional Information. Added the power-loss recovery in Section 5.5: Power-Loss Recovery. 309014-02 3

Introduction How to migrate to M29EW (SBC) from S29GL flash 1 Introduction Note: This application note describes how to convert a system design from Spansion S29GL (including P series and N series) Flash to Numonyx Axcell TM M29EW (SBC) Flash. This document was written based on device information available at the time. The 32-, 64- and 128-Mbit SBC M29EW Datasheet may override this application note if there is a different description for the same items in the datasheet. SBC in this document refers to Single Bit per Cell. 4 309014-02

Brief Comparison 2 Brief Comparison The M29EW (SBC) flash memory device is manufactured on leading 65nm process lithography and is compatible to S29GL flash memory device. Table 1 is a major feature comparison between the three devices. Table 1. General Feature Comparison Features M29EW (SBC) S29GL-P S29GL-N Process Technology 65nm SBC 90nm Mirror-bit 110nm Mirror-bit Package Block Architecture 64-Ball Fortified BGA 48-Ball BGA 56-Lead TSOP 48-Lead TSOP 128-Mbit 64-Mbit 32-Mbit Uniform 128KB Uniform 64KB Boot: 64KB (main block) and 8KB (boot block) Uniform 64KB Boot: 64KB (main block) and 8KB (boot block) 64-Ball Fortified BGA 56-Lead TSOP Uniform 128KB (128-Mbit only) 64-Ball Fortified BGA 48-Ball BGA 56-Lead TSOP 48-Lead TSOP 128- Mbit 64-Mbit 32-Mbit Page Read Size 8-Word 8-Word 8-Word Max. Program Buffer Size 256-Word 32-Word 16-Word Uniform 128KB Uniform 64K Boot: 64KB (main block) and 8KB (boot block) Uniform 64K Boot: 64KB (main block) and 8KB (boot block) Typical Single Word Program 15µs per Word 60µs per Word 60µs per Word Typical Program Speed with full buffer 1.11µs per Word 15µs per Word 15µs per Word Random Access Time (1) 1.8V V CCQ : 65ns 3.0V V CCQ : 60ns 1.8V V CCQ : 110ns 3.0V V CCQ : 100ns 1.8V V CCQ : 110ns 3.0V V CCQ : 100ns Typical Block Erase Time 0.5s 0.5s 0.5s Extended Memory Block 128 Words 128 Words 128 Words Support for Common Flash Interface Yes Yes Yes Hardware Protection of Highest/Lowest Block or Top/Bottom two Blocks Yes Yes Yes Software Protection and Password Protect Yes Yes Yes Password Access Yes No No 1. The random access time of M29EW device varies according to different packages: BGA (3V: 60ns and 1.8V: 65ns) and TSOP (3V: 70ns and 1.8V: 75ns). 309014-02 5

Hardware Considerations How to migrate to M29EW (SBC) from S29GL flash 3 Hardware Considerations The M29EW (SBC) device is ball/pin compatible to the S29GL series flash, in the 64-Ball Fortified BGA, 48-Ball BGA, 56-Lead TSOP and 48-Lead TSOP packages. Figure 1, Figure 2, Figure 3 and Figure 4 show the ball/pin details of all packages. Figure 1. M29EW (SBC) 64-Ball Fortified BGA Ball Layout (top and bottom views) 1 2 3 4 5 6 7 8 8 7 6 5 4 3 2 1 A A3 A7 RY/BY# WE# A9 A13 A13 A9 WE# RY/BY# A7 A3 A B C A4 A17 Vpp/ WP# RST# A2 A6 A18 A21 A8 A10 A12 A14 A22 A22 A12 A14 A8 A10 RST# Vpp/ WP# A21 A18 A17 A6 A4 A2 B C D A1 A5 A20 A19 A11 A15 Vccq Vccq A15 A 11 A19 A20 A5 A1 D E A0 D0 D2 D5 D7 A16 Vss Vss A16 D7 D5 D2 D0 A0 E F Vccq CE# D8 D10 D12 D14 BYTE# BYTE# D14 D12 D10 D8 CE# Vccq F G OE# D9 D11 Vcc D13 D15 / A-1 D15/ A-1 D13 Vcc D11 D9 OE# G H Vss D1 D3 D4 D6 Vss Vss D6 D4 D3 D1 Vss H Fortified BGA Top View - Ball side down Fortified BGA Bottom View-Ball side up 1. A-1 is the least significant address bit in x8 mode. 2. A21 is valid for 64-Mbit density and above; otherwise, it is not connected internally but. 3. A22 is valid for 128-Mbit density; otherwise, it is not connected internally but. 4. stands for Reserved for Future Use. 6 309014-02

Hardware Considerations Figure 2. M29EW (SBC) 48-Ball BGA Ball Layout (top and bottom views) 1 2 3 4 5 6 6 5 4 3 2 1 A A A3 A7 RY/BY# WE# A9 A13 A13 A9 WE# RY/BY# A7 A3 B C A4 A17 Vpp/ RST# WP# A8 A12 A12 A8 RST# Vpp/ WP# A17 A4 B C A2 A6 A18 A21 A10 A14 A14 A10 A21 A18 A6 A2 D D A1 A5 A20 A19 A11 A15 A15 A11 A19 A20 A5 A1 E A0 D0 D2 D5 D7 A16 A16 D7 D5 D2 D0 A0 E F F CE# D8 D10 D12 D14 BYTE# BYTE# D14 D12 D10 D8 CE# G H OE# D9 D11 Vcc D13 D15/ A-1 D15 /A-1 D13 Vcc D11 D9 OE# G H Vss D1 D3 D4 D6 Vss Vss D6 D4 D3 D1 Vss BGA Top View- Ball side down BGA Bottom View- Ball side up 1. A-1 is the least significant address bit in x8 mode. 2. A21 is valid for 64-Mbit density; otherwise, it is not connected internally but. 3. stands for Reserved for Future Use. 309014-02 7

Hardware Considerations How to migrate to M29EW (SBC) from S29GL flash Figure 3. M29EW (SBC) 56-Lead TSOP Pin Layout A 22 A 15 A 14 A 13 A 12 A 11 A 10 A 9 A 8 A19 A 20 WE# RST# A 21 V PP/WP# RY/BY# A 18 A 17 A 7 A 6 A 5 A 4 A 3 A 2 A 1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 56-Lead TSOP Pinout 14 mm x 20 mm Top View 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 A 16 BYTE# V SS DQ 15 / A -1 DQ 7 DQ 14 DQ 6 DQ 13 DQ 5 DQ 12 DQ 4 V CC DQ 11 DQ 3 DQ10 DQ 2 DQ 9 DQ1 DQ 8 DQ 0 OE# V SS CE# A 0 V CCQ 1. A-1 is the least significant address bit in x8 mode. 2. A21 is valid for 64-Mbit density and above; otherwise, it is not connected internally but. 3. A22 is valid for 128-Mbit density; otherwise, it is not connected internally but. 4. stands for Reserved for Future Use. 8 309014-02

Hardware Considerations Figure 4. M29EW (SBC) 48-Lead TSOP Pin Layout A15 A14 A13 A12 A11 A10 A9 A8 A19 A20 WE# RST# A21 V PP/WP# RY/BY# A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48-Lead TSOP Pinout 12 mm x 20 mm Top View 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 BYTE# Vss DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 Vcc DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# Vss CE# A0 1. A-1 is the least significant address bit in x8 mode. 2. A21 is valid for 64-Mbit density; otherwise, it is not connected internally but. 3. stands for Reserved for Future Use. 309014-02 9

Hardware Considerations How to migrate to M29EW (SBC) from S29GL flash 3.1 Signal Description Difference Table 2. M29EW (SBC) Table 2 gives a comparison between the M29EW (SBC) and S29GL signals. On both devices, the V PP function allows the memory to use an external high voltage power supply to reduce the time required for fast program operations. The Write Protect (WP) function provides a hardware method of protecting the highest, lowest, top two or bottom two blocks. When V PP /WP is Low, V IL, the highest, lowest, top two or bottom two blocks are protected on both the M29EW (SBC) and S29GL devices. When V PP /WP is High, V IH, the memory reverts to the previous protection status of the highest, lowest, top two or bottom two blocks. When V PP /WP# pin is raised to V PPH, the memory automatically enters the Unlock Bypass mode for both the M29EW (SBC) and S29GL devices. Signal Description Comparison Name A0-Amax (1) S29GL Address inputs Description Direction DQ0-DQ7 Data inputs/outputs I/O DQ8-DQ14 Data inputs/outputs I/O 1. A22, A21 and A20 are maximum address pins for 128-Mbit, 64-Mbit and 32-Mbit density respectively. Input DQ15/A-1 Data input/output or address input I/O or input CE# Chip Enable Input OE# Output Enable Input WE# Write Enable Input RST# RESET# Reset Input RY/BY# Ready/Busy output Output BYTE# Byte/word organization select Input VCCQ VIO Input/output buffer supply voltage Supply VCC Supply voltage Supply V PP /WP# WP#/ACC Acceleration Input/Write Protect Input VSS Ground - NC Not connected - 3.2 Mechanical Differences The M29EW (SBC) 48-Lead TSOP package has the same mechanical dimensions as S29GL 48-Lead TSOP package. The M29EW (SBC) 56-Lead TSOP package has a few mechanical dimensions that are different from S29GL 56-Lead TSOP package. Table 3 shows the major dimension comparison between M29EW (SBC) and S29GL TSOP devices. 10 309014-02

Hardware Considerations The M29EW (SBC) 64-Ball Fortified BGA package and 48-Ball BGA package have the same mechanical dimensions as S29GL 64-Ball Fortified BGA package and 48-Ball BGA package respectively. Figure 5. 56-Lead TSOP and 48-Lead TSOP, package outline A2 1 N e E B N/2 D1 D A CP DIE C TSOP-b A1 α L Table 3. TSOP Dimension Comparison Symbol M29EW (SBC) (Typical in millimeters) S29GL-P (Typical in millimeters) S29GL-N (Typical in millimeters) A2 B 56-Lead TSOP 0.995 56-Lead TSOP 1.00 56-Lead TSOP 1.00 48-Lead TSOP 1.00 48-Lead TSOP 1.00 56-Lead TSOP 0.15 56-Lead TSOP 0.22 56-Lead TSOP 0.22 48-Lead TSOP 0.22 48-Lead TSOP 0.22 3.3 I CC Difference Table 4 compares the I CC values for the M29EW (SBC) and S29GL devices. The I CCStandby difference has minimal system impact because the lower I CCRead, I CCWrite, and I CCErase specs of M29EW (SBC) provide for better overall system power consumption. 309014-02 11

Hardware Considerations How to migrate to M29EW (SBC) from S29GL flash Table 4. Symbol I CC Comparison M29EW (SBC) S29GL-P S29GL-N Density Test condition Typ Max Typ Max Typ Max Unit 128-Mbit 50 120 1 5 I CCStandby 64-Mbit - 35 120 1 5 µa - - 32-Mbit 35 120 32- and 64-Mbit Random read, - - 25 30 I CCRead 20 25 128-Mbit f = 5MHz 30 55 30 50 I CCWrite I CCErase 32- and 64-Mbit V PP /WP# = V IL - - 50 60 or V 35 50 IH 128-Mbit 50 90 50 90 32- and 64-Mbit V PP /WP# = - - 50 60 26 33 128-Mbit V PPH 50 80 50 90 ma 3.4 Device Capacitance Difference M29EW (SBC) flash has a different input/output capacitance, compared with S29GL flash. Table 5 shows the detail comparison. The minor difference for Input/Output Capacitance won't impact customer's hardware. Table 5. Capacitance Comparison Symbol Parameter Test Condition M29EW (SBC) S29GL-P S29GL-N Min Max Typ Max Density Typ Max Unit C IN C OUT Input Capacitance Output Capacitance V IN = 0V V OUT = 0V TSOP BGA TSOP BGA 2 7 6 10 2 5 10 12 32- and 64-Mbit 6.0 10.0 128-Mbit 6.0 7.5 32- and 64-Mbit TBD TBD 128-Mbit 4.2 5.0 32- and 64-Mbit 6.0 12.0 128-Mbit 8.5 12.0 32- and 64-Mbit TBD TBD 128-Mbit 5.4 6.5 pf 12 309014-02

Performance Differences 4 Performance Differences The M29EW (SBC) device has better program performance vs. S29GL devices. 4.1 Write Performance Note: The M29EW (SBC) has a larger program buffer than the S29GL-P and S29GL-N devices. Modifying system software will greatly improve system performance. Table 6 compares buffer sizes and typical write performance between the three devices. A Read/Reset command (F0h) must be issued with 1µs delay after the Error bit (DQ5) is set during Program/Erase operations. Table 6. Write Performance Comparison Description M29EW (SBC) S29GL-P S29GL-N Program Buffer Size 256-word 32-word 16-word Typical Program Speed with Full Buffer 1.8MB/s 0.133MB/s 0.133MB/s NVPBs Clear Time 0.5s NA NA Erase Suspend Latency 20µs (typ)/25µs (max) 5µs (typ)/20µs (max) 5µs (typ)/20µs (max) Program Suspend Latency 20µs (typ)/25µs (max) 5µs (typ)/15µs (max) 5µs (typ)/20µs (max) 4.2 Power-on and Reset Timings The M29EW (SBC) device has slightly different power-on and reset timing specifications, compared with the S29GL-P and S29GL-N devices. However, the difference has been proven to be of minimal impact on the customer, since many common processors support those parameters. Table 7. Power-on and Reset Timing Comparison Symbol Alt. Parameter Min/Max M29EW (SBC) S29GL-P S29GL-N t VCHPH t VCS V CC power valid to Reset# high (Min) Min 60µs 35µs 50µs t PLRH t READY Reset# low to read mode, during Program or Erase Max 25µs - 20µs Min - 35µs - t PLPH t RP Reset# pulse width Min 100ns 35µs 500ns t PHEL t PHGL t RH Reset# high to Chip Enable low, Output Enable low Min 50ns 200ns 50ns t RHEL RY/BY# high to Chip Enable low, Output Enable t t RB RHGL low Min 0ns 0ns 0ns 309014-02 13

Performance Differences How to migrate to M29EW (SBC) from S29GL flash Figure 6. Power-on and Reset Timing Sequences Vcc RST# tvchph Power-on Timing RY/BY# CE#,OE# RST# tphel tphgl tplph Reset Timing NOT during Program /Erase Operation RY/BY# CE#,OE# tplrh trhel trhgl RST# tplph Reset Timing during Program /Erase Operation 14 309014-02

Software Considerations 5 Software Considerations The command set of M29EW (SBC) flash is fully compatible with that of S29GL-P/S29GL-N devices. Therefore, no command change in software is required to accommodate M29EW (SBC) flash. 5.1 Manufacturer ID and Other Autoselect Information Numonyx and Spansion have different Manufacturer IDs, therefore, a slight modification in the software is required during migration. Table 8 outlines the differences of Autoselect information. Table 8. Autoselect Information Comparison (16-bit mode) Description Address M29EW (SBC) (Hex) S29 GL-P (Hex) S29GL-N (Hex) Manufacturer ID (Base)+00h 0089h 0001h 0001h Device ID Cycle 1 (Base)+01h 227Eh 227Eh 227Eh 128-Mbit 2221h 128-Mbit 2221h Device ID cycle 2 (Base)+0Eh 64-Mbit, boot 2210h 2221h 64-Mbit, boot 2210h 64-Mbit, uniform 220Ch (128- Mbit 64-Mbit, uniform 220Ch 32-Mbit, boot 221Ah only) 32-Mbit, boot 221Ah 32-Mbit, uniform 221Dh 32-Mbit, uniform 221Dh Device ID cycle 3 (Base)+0Fh 128- and 64- Mbit uniform, 64- and 32-Mbit top 64- and 32-Mbit bottom, 32-Mbit uniform 2201h 2200h 2201h (128- Mbit only) 128- and 64- Mbit uniform, 64- and 32-Mbit top 64- and 32-Mbit bottom, 32-Mbit uniform 2201h 2200h Protection Register Indicator V PP /WP # Locks Highest Block (s) (1) V PP /WP # Locks Lowest Block (s) (2) Factory Locked Factory Unlocked Factory Locked Factory Unlocked (Base)+03h 128-Mbit 0099h 0099h 128-Mbit 0098h 64- and 32-Mbit 009Ah - 64- and 32-Mbit 009Ah 128-Mbit 0019h 0019h 128-Mbit 0018h 64- and 32-Mbit 001Ah - 64- and 32-Mbit 001Ah 128-Mbit 0089h 0089h 128-Mbit 0088h 64- and 32-Mbit 008Ah - 64- and 32-Mbit 008Ah 128-Mbit 0009h 0009h 128Mbit 0008h 64- and 32-Mbit 000Ah - 64- and 32-Mbit 000Ah 309014-02 15

Software Considerations How to migrate to M29EW (SBC) from S29GL flash Table 8. Autoselect Information Comparison (16-bit mode) Description Address M29EW (SBC) (Hex) S29 GL-P (Hex) S29GL-N (Hex) Block Protection Unprotected 0000h 0000h 0000h (Base)+02h Protected 0001h 0001h 0001h 1. When VPP/WP# is V IL, the highest (M29EWH) or top two (M29EWT) blocks are protected. 2. When VPP/WP# is V IL, the lowest (M29EWL) or bottom two (M29EWB) blocks are protected. 5.2 Autoselect Entry Comparison The M29EW device does not support 12V V HH on A9 pin to enter Autoselect mode, while normal command sequence (AAh/55h/90h) can enter Autoselect mode. Applying 12V on A9 pin may damage the device. S29GL devices support both methods to enter Autoselect mode. Table 9. Autoselect Entry Comparison Autoselect Entry Mode M29EW (SBC) S29GL-P S29GL-N 12V on A9 pin No Yes Yes Entry Command (90h) Yes Yes Yes 5.3 CFI Difference CFI differences exist between M29EW (SBC) and S29GL-P/S29GL-N due to device features and performance characteristics. The Table 10 outlines the relevant information. Table 10. CFI Difference Comparison Address (HEX) Description M29EW (SBC) (HEX) S29GL-P (HEX) S29GL-N (HEX) 1D 1E VPPH [programming] supply minimum Program / Erase voltage bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 mv VPPH [programming] supply maximum Program / Erase voltage bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 mv 00B5 0000 0000 00C5 0000 0000 1F Typical time-out for single byte/word program = 2 n µs 0004 0006 0007 20 Typical time-out for maximum size buffer program = 2 n µs 0009 0006 0007 21 Typical time-out for individual block erase = 2 n ms 0009 0009 000A 16 309014-02

Software Considerations Table 10. CFI Difference Comparison Address (HEX) Description M29EW (SBC) (HEX) S29GL-P (HEX) S29GL-N (HEX) 128-Mbit 0011 22 Typical time-out for full Chip Erase = 2 n ms 64-Mbit 0010 32-Mbit 0009 0013 0000 23 Maximum time-out for byte/word program = 2 n times typical time-out 0004 0003 0003 24 Maximum time-out for buffer program = 2 n times typical time-out 0002 0005 0005 25 Maximum time-out per individual block erase = 2 n times typical time-out 26 Maximum time-out for Chip Erase = 2 n times typical time-out 0003 0003 0004 0002 0002 0000 2A 2B 45 Maximum number of byte in multiple-byte write = 2 n 0008 0000 Address Sensitive Unlock (Bits 1 to 0) 0 = Required, 1 = Not Required Silicon revision number (Bits 7 to 2) 0006 0000 0005 0000 0018 0014 0010 5.4 Password Access Password Access is a security enhancement offered on the M29EW (SBC) device. This feature protects information stored in the main-array blocks by preventing content alteration or reads until a valid 64-bit password is received. Password Access may be combined with Non-Volatile and/or Volatile Protection to create a multi-tiered solution. S29GL-P and S29GL-N series devices don t support this feature. Please contact your Numonyx sales representatives for further details concerning Password Access feature. 5.5 Power-Loss Recovery It is recommended that the user enable robust power-loss recovery in software system, especially during the flash write operations. Please refer to the Application Note 309046 for detail information. 309014-02 17

Additional Information Appendix A Additional Information How to migrate to M29EW (SBC) from S29GL flash Order Number Document / Tool 208031 S29GL-P_00 S29GL-N_00 S29GL-N_01 Numonyx Axcell TM M29EW (SBC) 128-Mbit, 64-Mbit, 32-Mbit (x8 or x16, page) 3V Supply Flash Memory Datasheet SPANSION MirrorBit S29GL-P 1-Gbit, 512-Mbit, 256-Mbit, 128-Mbit 3.0 Volt-only Page Mode Flash Memory Datasheet SPANSION MirrorBit S29GL-N 512-Mbit, 256-Mbit, 128-Mbit 3.0 Volt-only Page Mode Flash Memory Datasheet SPANSION MirrorBit S29GL-N 64-Mbit, 32-Mbit 3.0 Volt-only Page Mode Flash Memory Datasheet 309046 Application Note: Power-Loss Recovery for Nor Flash Memory Notes: 1. Contact your local Numonyx or distribution sales office to request Numonyx documentation. 2. Visit the Numonyx World Wide Web home page at http://www.numonyx.com for further information, technical documentation and tools. 18 309014-02

Please Read Carefully: INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH NUMONYX PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN NUMONYX'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, NUMONYX ASSUMES NO LIABILITY WHATSOEVER, AND NUMONYX DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY, RELATING TO SALE AND/OR USE OF NUMONYX PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. Numonyx products are not intended for use in medical, life saving, life sustaining, critical control or safety systems, or in nuclear facility applications. Numonyx may make changes to specifications and product descriptions at any time, without notice. Numonyx, B.V. may have patents or pending patent applications, trademarks, copyrights, or other intellectual property rights that relate to the presented subject matter. The furnishing of documents and other materials and information does not provide any license, express or implied, by estoppel or otherwise, to any such patents, trademarks, copyrights, or other intellectual property rights. Designers must not rely on the absence or characteristics of any features or instructions marked reserved or undefined. Numonyx reserves these for future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them. Contact your local Numonyx sales office or your distributor to obtain the latest specifications and before placing your product order. Copies of documents which have an order number and are referenced in this document, or other Numonyx literature may be obtained by visiting Numonyx's website at http://www.numonyx.com. Numonyx Axcell is a trademark or registered trademark of Numonyx or its subsidiaries in the United States and other countries. *Other names and brands may be claimed as the property of others. Copyright 2009, Numonyx, B.V., All Rights Reserved. 19