Enterprise Data Integrity and Increasing the Endurance of Your Solid-State Drive MEMS003

Similar documents
NVMHCI: The Optimized Interface for Caches and SSDs

Data center day. Non-volatile memory. Rob Crooke. August 27, Senior Vice President, General Manager Non-Volatile Memory Solutions Group

Kirk Skaugen Senior Vice President General Manager, PC Client Group Intel Corporation

Solid-State Drives for Servers and Clients: Why, When, Where and How

Thunderbolt Technology Brett Branch Thunderbolt Platform Enabling Manager

The Heart of A New Generation Update to Analysts. Anand Chandrasekher Senior Vice President, Intel General Manager, Ultra Mobility Group

Data Centre Server Efficiency Metric- A Simplified Effective Approach. Henry ML Wong Sr. Power Technologist Eco-Technology Program Office

Performance Monitoring on Intel Core i7 Processors*

Mobile World Congress Claudine Mangano Director, Global Communications Intel Corporation

32nm Westmere Family of Processors

Hardware and Software Co-Optimization for Best Cloud Experience

Innovation Accelerating Mission Critical Infrastructure

Technology is a Journey

Server Efficiency: A Simplified Data Center Approach

Unlocking the Future with Intel

JOE NARDONE. General Manager, WiMAX Solutions Division Service Provider Business Group October 23, 2006

Carsten Benthin, Sven Woop, Ingo Wald, Attila Áfra HPG 2017

Solid-State Drive System Optimizations In Data Center Applications

Using Wind River Simics * Virtual Platforms to Accelerate Firmware Development

Interconnect Bus Extensions for Energy-Efficient Platforms

Rack Scale Architecture Platform and Management

Building a Firmware Component Ecosystem with the Intel Firmware Engine

DisplayPort: Foundation and Innovation for Current and Future Intel Platforms

Using Wind River Simics * Virtual Platforms to Accelerate Firmware Development PTAS003

Extending Energy Efficiency. From Silicon To The Platform. And Beyond Raj Hazra. Director, Systems Technology Lab

Programming Larrabee: Beyond Data Parallelism. Dr. Larry Seiler Intel Corporation

Nokia Conference Call 1Q 2012 Financial Results

Nex t MADE IN JAPAN. Copyright 2003 Hitachi Global Storage Technologies

Introduction to the NVMe Working Group Initiative

NOKIA FINANCIAL RESULTS Q3 / 2012

Sensors on mobile devices An overview of applications, power management and security aspects. Katrin Matthes, Rajasekaran Andiappan Intel Corporation

Steve Milligan President & Chief Executive Officer. April 22, 2010

Forging a Future in Memory: New Technologies, New Markets, New Applications. Ed Doller Chief Technology Officer

Non-Volatile Memory Cache Enhancements: Turbo-Charging Client Platform Performance

Risk Factors. Rev. 4/19/11

SanDisk Enterprise Storage Solutions

Intel Architecture Press Briefing

The Transition to PCI Express* for Client SSDs

SSDs Going Mainstream Do you believe? Tom Rampone Intel Vice President/General Manager Intel NAND Solutions Group

Nokia Conference Call Fourth Quarter 2010 and Full Year 2010 Financial Results

Intel European Investor Meeting

Drive Recovery Panel

Lenovo ThinkCentre M90z with Intel vpro Technology. Stefan Richards Intel Corporation Business Client Platform Division

Hitachi Announces the Conclusion of Absorption-Type Company Split Agreement Relating to Reorganization of the Healthcare Business

Nokia Conference Call Second Quarter 2010 Financial Results

Hitachi Received Notice of Request for Arbitration

Hitachi Announces 2018 Mid-term Management Plan

Entry-level Intel RAID RS3 Controller Family

Intel Desktop Board DZ68DB

Intel Extreme Memory Profile (Intel XMP) DDR3 Technology

Hitachi Completes Transfer of Hard Disk Drive Business to Western Digital

G i v e Y o u r H a r d D r i v e w h a t i t s B e e n M i s s i n g P e r f o r m a n c e The new Synapse

Risk Factors. Rev. 4/19/11

Understanding Windows To Go

GUID Partition Table (GPT)

Intel 945(GM/GME)/915(GM/GME)/ 855(GM/GME)/852(GM/GME) Chipsets VGA Port Always Enabled Hardware Workaround

Hitachi Announces Consolidated Financial Results for Fiscal 2017

Intel and the Future of Consumer Electronics. Shahrokh Shahidzadeh Sr. Principal Technologist

Driving SSD Storage into Today s Embedded Systems Computing Architecture s

Technology challenges and trends over the next decade (A look through a 2030 crystal ball) Al Gara Intel Fellow & Chief HPC System Architect

Intel vpro Technology Virtual Seminar 2010

Technical Notes. Considerations for Choosing SLC versus MLC Flash P/N REV A01. January 27, 2012

Theory and Practice of the Low-Power SATA Spec DevSleep

SanDisk Overview. Mike Chenery Senior Fellow. 5th Annual Needham HDD & Memory Conference Boston, MA. November 3, 2011

Evolving Small Cells. Udayan Mukherjee Senior Principal Engineer and Director (Wireless Infrastructure)

Introducing and Validating SNIA SSS Performance Test Suite Esther Spanjer SMART Modular

SATA 1.8-inch and 2.5-inch MLC Enterprise SSDs for System x Product Guide

Guardian Technology Platform Webcast

EMC Corporation. Tony Takazawa Vice President, EMC Investor Relations. August 5, 2008

Intel Desktop Board DP55SB

Nokia Conference Call First Quarter 2010 Financial Results

Interface Trends for the Enterprise I/O Highway

Intel Cache Acceleration Software for Windows* Workstation

White Paper: Increase ROI by Measuring the SSD Lifespan in Your Workload

SSD ENDURANCE. Application Note. Document #AN0032 Viking SSD Endurance Rev. A

Mobility: Innovation Unleashed!

Välkommen. Intel Anders Huge

Quick Reference This guide is written for technically qualified personnel with experience installing and configuring desktop boards.

Frequently Asked Questions. s620 SATA SSD Enterprise-Class Solid-State Device

Extremely Fast Distributed Storage for Cloud Service Providers

It Takes Guts to be Great

The Drive Interface Progress Cycle

Understanding SSD overprovisioning

Intel Server Board S3000PT Spares/Parts List and Configuration Guide for Production Products

Consolidated Financial Results for the Second Quarter, Fiscal 2018

Solid State Drives: The MLC Challenge. By Don Barnetson Sr. Director of Marketing Sandisk Corporation

Intel Transparent Computing

Tech Talk on HPC. Ken Claffey. VP, Cloud Systems. May 2016

PRESS RELEASE April 19, 2011

Expand Your HPC Market Reach and Grow Your Sales with Intel Cluster Ready

msata Mini Embedded Flash Module Engineering Specification

KVM for IA64. Anthony Xu

Intel Atom Processor Based Platform Technologies. Intelligent Systems Group Intel Corporation

LSI and HGST accelerate database applications with Enterprise RAID and Solid State Drives

Intel Desktop Board D945GCCR

Intel Desktop Board DG41RQ

Intel Desktop Board DH55TC

2008 Mobile World Congress. February 12, Barcelona

Hitachi Announces Consolidated Financial Results for the First Quarter of Fiscal 2006

Intel Desktop Board D946GZAB

Transcription:

SF 2009 Enterprise Data Integrity and Increasing the Endurance of Your Solid-State Drive James Myers Manager, SSD Applications Engineering, Intel Cliff Jeske Manager, SSD development, Hitachi GST MEMS003

Agenda Enterprise Endurance & Data Integrity What is SSD Endurance? Impacts on Endurance Validating SSD Endurance Enterprise Data Integrity Features Hitachi SAS SSD Case Study 2

Enterprise Endurance & Data Integrity What is SSD Endurance? Impacts on Endurance Validating SSD Endurance Enterprise Data Integrity Features Hitachi SAS SSD Case Study 3

What is SSD Endurance? Enterprise SSD Endurance can be defined as the total amount of random host data which can be written within the life of the drive X25-E* 32 GB 1 Petabytes 64 GB 2 Petabytes Hitachi SAS SSD* e.g. 100 GB 10 Petabytes X25-M* 80 GB 7.5 Terabytes 160 GB 15 Terabytes 4 *Intel X25-M Mainstream Solid-State Drive *Intel X25-E Extreme SATA Solid-State Drive *Other names and brands may be claimed as the property of others Enterprise Endurance specified as 4K writes written randomly to all LBAs, queue depth 32, Write Cache enabled, Client Endurance not shown

Why Endurance Matters with SSDs Under demanding enterprise workloads, SSDs based on flash can wear out There can be greater than 10X difference in endurance between SSD models in enterprise workloads To ensure the best SSD value, choose and configure the SSD to match the endurance needs of the application Understanding elements which impact SSD endurance enable ROI optimization 5

Enterprise Endurance & Data Integrity What is SSD Endurance? Impacts on Endurance Validating SSD Endurance Enterprise Data Integrity Features Hitachi SAS SSD Case Study 6

What Impacts Endurance? Technology Block erase cycles (SLC vs MLC ) Write Workload Random vs Sequential Spare Area Capacity reserve / work space Managed by: Firmware Algorithms Efficiency of writes (Write amplification) and wearleveling Delivers: Drive Endurance Drive design and arch matters! Lower write amplification Fewer cycles Faster write perf High Random Writes = Endurance Efficiency 7

Technology Effects on Endurance SLC (Single Level Cell) Two electrical states Larger electrical separation of states Faster write performance Enhanced data retention 10X program / erase endurance Distribution SLC: 2 levels 1 bit/cell 1 0 Vt MLC (Multi-Level Cell) Four electrical states 2X the bit density per cell Slower write performance Greater ECC requirements Compute application cost optimization Distribution MLC: 4 levels 2 bit/cell 11 10 01 00 Vt MLC offers 2X capacity at reduced endurance 8

Write Workload Affects Endurance 25X Seq vs Rnd 370TB - X25-M * (160G) Boot Drive Portal Social DB VoD Portal Search 100% Sequential HPC Data Table Web Caching 10PB - X25-E * (64G) 15TB 370TB 2PB 10PB FSI - Trade logging OTLP 5X Seq vs Rnd 15TB - X25-M * (160G) 100% Random 2PB - X25-E * (64G) Enterprise Endurance improves 5-25X for sequential workloads 9 *Intel X25-M Mainstream Solid-State Drive *Intel X25-E Extreme SATA Solid-State Drive Note: Endurance shown assumes 100% of data locations written with 4k write transfer sizes

Spare Area Affects Endurance Increasing spare area increases endurance Spare area beyond 27% of native capacity has diminishing returns Adjust Intel SSD spare area by limiting drive capacity ATA8-ACS Host Protected Area feature set is used (SET MAX ADDRESS) Use ATA8-ACS SECURITY ERASE UNIT prior to limiting capacity Setting partition to smaller size after erase is an option (less robust) 6 Endurance scaling w/ over provisioning Normalized Endurance 5 4 3 2 1 0 4KB Write 100% Random Workload 7% 17% 27% % Spare Area Intel SSD Technology allows adjusting capacity to provide up to 3.5X improvement in endurance 10 Enterprise Endurance specified with 4K writes written randomly to all LBAs, queue depth of 32, Write Cache enabled Client Endurance not shown

Case Study: 144 GB User Capacity User Capacity of 144 GB Native 160 GB capacity reduced by 16 GB Spare area increase to 17% 42 TB endurance capability! Endurance increased by 27 TB 2.8X improvement! Sequential write capability unchanged 8.8X Seq vs Rnd 370TB - X25-M * (144G) 15TB Boot Drive 50TB Portal Social DB VoD Portal Search 370TB 100% Sequential 42TB - X25-M * (144G) 100% Random 10% capacity reduction provides 2.8X Enterprise Endurance gains! 11 *Intel X25-M Mainstream Solid-State Drive Note: Assumed that the drive is written to through 100% span with 100% 4k random or sequential write transfer sizes

Case Study: 128 GB User Capacity User Capacity of 128 GB Native 160 GB capacity reduced by 32 GB Spare area increase to 27% 53 TB endurance capability! Endurance increased by 38 TB 3.5X improvement! Sequential write capability unchanged 6.6X Seq vs Rnd 370TB - X25-M * (128G) 15TB Boot Drive 50TB Portal Social DB VoD Portal Search 370TB 100% Sequential 53TB - X25-M * (128G) 100% Random Intel X25-M* SSDs allow users to configure endurance to meet application requirements 12 *Intel X25-M Mainstream Solid-State Drive Note: Assumed that the drive is written to through 100% span with 100% 4k random or sequential write transfer sizes

Enterprise Endurance & Data Integrity What is SSD Endurance? Impacts on Endurance Validating SSD Endurance Enterprise Data Integrity Features Hitachi SAS SSD Case Study 13

Monitoring Intel SSD Endurance Intel provides SMART attributes which allow monitoring of write usage and endurance SMART Address E1h E9h Attribute Name Host Writes Media Wear Indicator Detailed Description Number of Logical Block Addresses (LBAs/512 byte sectors) written by the host. Raw value field is increased by 1 for every 65,535 LBAs written by the host. Value reports percentage of endurance remaining, decreasing from 100% with use. Value based on average Program / Erase cycles consumed vs. capability Intel SMART attributes allow users to ensure the endurance capability meets the application need 14

Endurance Summary Enterprise SSD endurance defined Enterprise SSD endurance is defined as drive write capability for small data transfers written randomly Extending the life of your SSD Intel SSD endurance is managed by efficient firmware algorithms which minimize write amplification technology, write workload, and spare area impact endurance capability Intel Technology allows adjusting user capacity to increase endurance capability to meet application requirements Monitoring endurance Intel SSDs provide SMART attributes for monitoring host activity and SSD wear 15 Enterprise Endurance specified with 4K writes written randomly to all LBAs, queue depth of 32, Write Cache enabled Client Endurance not shown

Enterprise Endurance & Data Integrity What is SSD Endurance? Impacts on Endurance Validating SSD Endurance Enterprise Data Integrity Features Hitachi SAS SSD Case Study 16

Hitachi GST SAS SSD * Dual Port 6G SAS SSD Large capacities High performance with superior reliability SLC capacity provisioned for high performance and data reliability Marketed and sold by Hitachi GST for the Enterprise Joint Development between Hitachi GST and Intel Integrating Hitachi GST s Enterprise HDD products and Intel s and management 17 *Other names and brands may be claimed as the property of others

Hitachi GST SAS SSD SDRAM Scratch Pad SAS SAS Controller Processor SAS PHY Data Link & Transport Management T10 support ECC Encryption Channel Mgmt sss Channel High performance with superior reliability delivered by Dual Port 6Gb SAS T10 end to end data protection Extended Data ECC Power Loss detect and protect 18

Dual Port 6Gb SAS SAS SAS Port A SAS PHY Link & Transport Port B SAS PHY Link & Transport Controller Data Management sss ECC Channel Mgmt Channel Dual Port 6Gb SAS for performance and reliability Two completely independent 6Gbps port controls for data transfers Either port can be utilized as a fail over port to improve system level reliability in the event of a failed port or host channel 19

End to End Data Protection & Extended ECC SAS SAS CRC Generator / Checker CRC Generator / Checker Controller sss Extended ECC Channel SSD CRC protects customer data path CRC uniquely seeded and stored with customer data Customer CRC accompanies data and stored to T10 end to end protection checking option Extended ECC increases data recovery capability ECC written to with customer data 20

Power Loss Detect and Protect 12v Voltage Detector Switch sss SSD Power Regulation 5v Power Back-up Power Loss Detect circuit monitors incoming power Detect circuit switches to Power back-up at low voltage detect SSD operates under back-up completing cached operations safely Allowance for hot unplug while writing 21

Call to Action Intel SSDs meet the challenging endurance requirements of enterprise workloads Understand your application needs and choose the best Intel SSD to match Adjust capacity as needed to stretch endurance and maximize ROI Use SMART features to monitor SSD endurance Future SSD technologies enhance data integrity capability Look for new Hitachi GST SAS SSDs * based on Intel technology 22 *Other names and brands may be claimed as the property of others

Want More Info on SSDs? Attend or download these SSD-related sessions Tuesday, Sept 22 nd EBLS001 - Extending Battery Life of Mobile PCs: An Overview Wednesday, Sept 23 rd MEMS001 - Designing Solid-State Drives into Data Center Solutions MEMS002 - Understanding the Performance of Solid-State Drives in the Enterprise MEMS003 - Enterprise Data Integrity and Increasing the Endurance of Your Solid-State Drive MEMS004 - Future Solid-State Drive Innovations MEMQ002 - Open Q&A for SSD sessions Thursday, Sept 24 th MPTS006 - Extreme Notebook Design: Architecting the Most Powerful Mobile Platforms for Gaming & Workstation Applications RESS006 - Differentiated Storage Services: Making the Most of Solid-State Drives STOS004 - Intel Modular Server with Intel Solid-State Drives Visit our Booth #532 on Level 1 of the Tech Showcase SSD vs HDD comparisons, gaming demo and more! Visit us online at www.intel.com/go/ssd Product briefs, datasheets, whitepapers, videos, technical support 23

Legal Disclaimer INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, INTEL ASSUMES NO LIABILITY WHATSOEVER, AND INTEL DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY, RELATING TO SALE AND/OR USE OF INTEL PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. INTEL PRODUCTS ARE NOT INTENDED FOR USE IN MEDICAL, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS. Intel may make changes to specifications and product descriptions at any time, without notice. All products, dates, and figures specified are preliminary based on current expectations, and are subject to change without notice. Intel, processors, chipsets, and desktop boards may contain design defects or errors known as errata, which may cause the product to deviate from published specifications. Current characterized errata are available on request. Performance tests and ratings are measured using specific computer systems and/or components and reflect the approximate performance of Intel products as measured by those tests. Any difference in system hardware or software design or configuration may affect actual performance. Intel, and the Intel logo are trademarks of Intel Corporation in the United States and other countries. *Other names and brands may be claimed as the property of others. Copyright 2009 Intel Corporation. 24

Risk Factors The above statements and any others in this document that refer to plans and expectations for the third quarter, the year and the future are forward-looking statements that involve a number of risks and uncertainties. Many factors could affect Intel s actual results, and variances from Intel s current expectations regarding such factors could cause actual results to differ materially from those expressed in these forward-looking statements. Intel presently considers the following to be the important factors that could cause actual results to differ materially from the corporation s expectations. Ongoing uncertainty in global economic conditions pose a risk to the overall economy as consumers and businesses may defer purchases in response to tighter credit and negative financial news, which could negatively affect product demand and other related matters. Consequently, demand could be different from Intel's expectations due to factors including changes in business and economic conditions, including conditions in the credit market that could affect consumer confidence; customer acceptance of Intel s and competitors products; changes in customer order patterns including order cancellations; and changes in the level of inventory at customers. Intel operates in intensely competitive industries that are characterized by a high percentage of costs that are fixed or difficult to reduce in the short term and product demand that is highly variable and difficult to forecast. Additionally, Intel is in the process of transitioning to its next generation of products on 32nm process technology, and there could be execution issues associated with these changes, including product defects and errata along with lower than anticipated manufacturing yields. Revenue and the gross margin percentage are affected by the timing of new Intel product introductions and the demand for and market acceptance of Intel's products; actions taken by Intel's competitors, including product offerings and introductions, marketing programs and pricing pressures and Intel s response to such actions; and Intel s ability to respond quickly to technological developments and to incorporate new features into its products. The gross margin percentage could vary significantly from expectations based on changes in revenue levels; capacity utilization; start-up costs, including costs associated with the new 32nm process technology; variations in inventory valuation, including variations related to the timing of qualifying products for sale; excess or obsolete inventory; product mix and pricing; manufacturing yields; changes in unit costs; impairments of long-lived assets, including manufacturing, assembly/test and intangible assets; and the timing and execution of the manufacturing ramp and associated costs. Expenses, particularly certain marketing and compensation expenses, as well as restructuring and asset impairment charges, vary depending on the level of demand for Intel's products and the level of revenue and profits. The current financial stress affecting the banking system and financial markets and the going concern threats to investment banks and other financial institutions have resulted in a tightening in the credit markets, a reduced level of liquidity in many financial markets, and heightened volatility in fixed income, credit and equity markets. There could be a number of follow-on effects from the credit crisis on Intel s business, including insolvency of key suppliers resulting in product delays; inability of customers to obtain credit to finance purchases of our products and/or customer insolvencies; counterparty failures negatively impacting our treasury operations; increased expense or inability to obtain short-term financing of Intel s operations from the issuance of commercial paper; and increased impairments from the inability of investee companies to obtain financing. The majority of our non-marketable equity investment portfolio balance is concentrated in companies in the flash memory market segment, and declines in this market segment or changes in management s plans with respect to our investments in this market segment could result in significant impairment charges, impacting restructuring charges as well as gains/losses on equity investments and interest and other. Intel's results could be impacted by adverse economic, social, political and physical/infrastructure conditions in countries where Intel, its customers or its suppliers operate, including military conflict and other security risks, natural disasters, infrastructure disruptions, health concerns and fluctuations in currency exchange rates. Intel's results could be affected by adverse effects associated with product defects and errata (deviations from published specifications), and by litigation or regulatory matters involving intellectual property, stockholder, consumer, antitrust and other issues, such as the litigation and regulatory matters described in Intel's SEC reports. A detailed discussion of these and other risk factors that could affect Intel s results is included in Intel s SEC filings, including the report on Form 10-Q for the quarter ended June 27, 2009. Rev. 8/3/09