HT24LC02. CMOS 2K 2-Wire Serial EEPROM. Pin Assignment. Features. General Description. Block Diagram. Pin Description

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CMOS K -Wire Serial EEPROM Features Operating voltage.v~5.5v for temperature 0C to+70c.4v~5.5v for temperature 40C to+85c Low power consumption Operation: 5mA max. Standby: 5A max. Internal organization: 568 -wire serial interface Write cycle time: 5ms max. Automatic erase-before-write operation Partial page write allowed 8-byte Page write modes Write operation with built-in timer Hardware controlled write protection 40-year data retention 10 6 erase/write cycles per word Commercial temperature range (40C to+85c 8-pin DIP/SOP/TSSOP package General Description The HT4LC0 is a K-bit serial read/write non-volatile memory device using the CMOS floating gate process. Its 048 bits of memory are organized into 56 words and each word is 8 bits. The device is optimized for use in many industrial and commercial applications where low power and low voltage operation are essential. Up to eight HT4LC0 devices may be connected to the same -wire bus. The HT4LC0 is guaranteed for 1M erase/write cycles and 40-year data retention. Block Diagram Pin Assignment 5 + 9 1 + JH C E? A HO + JH C E? : - + 0 8 K F - - 4 HH= O = C A * K B ; - + 8 5 5! " & % $ # 8 + + 9 5 + 0 6 " + & 1 5 6 5 5 @ @ HA I I + K JA H 5 A I A 4 9 + JH 8 + + 8 5 5 Pin Description Pin Name I/O Description A0~A I Address inputs SDA I/O Serial data inputs/output SCL I Serial clock data input WP I Write protect VSS Negative power supply ground VCC Positive power supply Rev. 1.30 1 June 7 007

Absolute Maximum Ratings Supply Voltage...V SS 0.3V to V SS +6.0V Input Voltage...V SS 0.3V to V CC +0.3V Storage Temperature...50C to15c Operating Temperature...40C to85c Note: These are stress ratings only. Stresses exceeding the range specified under Absolute Maximum Ratings may cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability. D.C. Characteristics Symbol Parameter V CC Test Conditions Conditions Min. Typ. Max. Unit V CC Operating Voltage 0C to+70c. 5.5 V 40C to+85c.4 5.5 V I CC1 Operating Current 5V Read at 100kHz ma I CC Operating Current 5V Write at 100kHz 5 ma V IL Input Low Voltage 1 0.3V CC V V IH Input High Voltage 0.7V CC V CC +0.5 V V OL Output Low Voltage.4V I OL =.1mA 0.4 V I LI Input Leakage Current 5V V IN =0 or V CC 1 A I LO Output Leakage Current 5V V OUT =0 or V CC 1 A I STB1 Standby Current 5V V IN =0 or V CC 5 A I STB Standby Current.4V V IN =0 or V CC 4 A C IN Input Capacitance (See Note f=1mhz 5C 6 pf C OUT Output Capacitance (See Note f=1mhz 5C 8 pf Note: These parameters are periodically sampled but not 100% tested Rev. 1.30 June 7 007

A.C. Characteristics Symbol Parameter Remark Standard Mode* V CC =5V10% Min. Max. Min. Max. Unit f SK Clock Frequency 100 400 khz t HIGH Clock High Time 4000 600 ns t LOW Clock Low Time 4700 100 ns t r SDA and SCL Rise Time Note 1000 300 ns t f SDA and SCL Fall Time Note 300 300 ns t HD:STA START Condition Hold Time After this period the first clock pulse is generated 4000 600 ns t SU:STA START Condition Setup Time Only relevant for repeated START condition 4000 600 ns t HD:DAT Data Input Hold Time 0 0 ns t SU:DAT Data Input Setup Time 00 100 ns t SU:STO STOP Condition Setup Time 4000 600 ns t AA Output Valid from Clock 3500 900 ns t BUF Bus Free Time Time in which the bus must be free before a new transmission can start 4700 100 ns t SP Input Filter Time Constant (SDA and SCL Pins Noise suppression time 100 50 ns t WR Write Cycle Time 5 5 ms Note: These parameters are periodically sampled but not 100% tested * The standard mode means V CC =.V to 5.5V at Ta= 0Cto+70C V CC =.4V to 5.5V at Ta= 40Cto+85C For relative timing refer to timing diagrams Rev. 1.30 3 June 7 007

Functional Description Serial clock (SCL The SCL input is used for positive edge clock data into each EEPROM device and negative edge clock data out of each device. Serial data (SDA The SDA pin is bidirectional for serial data transfer. The pin is open-drain driven and may be wired-or with any number of other open-drain or open collector devices. A0 A1 A The A A1 and A0 pins are device address inputs that are hard wired for the HT4LC0. As many as eight K devices may be addressed on a single bus system (the device addressing is discussed in detail under the Device Addressing section. Write protect (WP The HT4LC0 has a write protect pin that provides hardware data protection. The write protect pin allows normal read/write operations when connected to the V SS. When the write protect pin is connected to Vcc the write protection feature is enabled and operates as shown in the following table. WP Pin Protect Array Status At V CC At V SS Full Array (K Memory Organization Normal Read/Write Operations HT4LC0 K Serial EEPROM Internally organized with 56 8-bit words the K requires an 8-bit data word address for random word addressing. Device Operations Clock and data transition Data transfer may be initiated only when the bus is not busy. During data transfer the data line must remain stable whenever the clock line is high. Changes in data line while the clock line is high will be interpreted as a START or STOP condition. Start condition A high-to-low transition of SDA with SCL high is a start condition which must precede any other command (refer to Start and Stop Definition Timing diagram. Stop condition A low-to-high transition of SDA with SCL high is a stop condition. After a read sequence the stop command will place the EEPROM in a standby power mode (refer to Start and Stop Definition Timing Diagram. Acknowledge All addresses and data words are serially transmitted to and from the EEPROM in 8-bit words. The EEPROM sends a zero to acknowledge that it has received each word. This happens during the ninth clock cycle. 5 +? @ EJE Device Addressing The K EEPROM devices all require an 8-bit device address word following a start condition to enable the chip for a read or write operation. The device address word consist of a mandatory one zero sequence for the first four most significant bits (refer to the diagram showing the Device Address. This is common to all the EEPROM device. The next three bits are the A A1 and A0 device address bits for the K EEPROM. These three bits must compare to their corresponding hard-wired input pins. The 8th bit of device address is the read/write operation select bit. A read operation is initiated if this bit is high and a write operation is initiated if this bit is low. If the comparison of the device address succeed the EEPROM will output a zero at ACK bit. If not the chip will return to a standby state. Write Operations = J= = M A @ J? D = C A @ @ HA I I H =? M A @ C A L = E@ + I J= JA A L E? A @ @ HA I I 5 J F? @ EJE Byte write A write operation requires an 8-bit data word address following the device address word and acknowledgment. Upon receipt of this address the EEPROM will again respond with a zero and then clock in the first 8-bit data word. After receiving the 8-bit data word the EEPROM will output a zero and the addressing device such as a microcontroller must terminate the write sequence with a stop condition. At this time the EEPROM enters an internally-timed write cycle to the non-volatile memory. All inputs are disabled during this write cycle and EEPROM will not respond until the write is completed (refer to Byte write timing. 4 9 Rev. 1.30 4 June 7 007

Page write The K EEPROM is capable of an 8-byte page write. A page write is initiated the same as byte write but the microcontroller does not send a stop condition after the first data word is clocked in. Instead after the EEPROM acknowledges the receipt of the first data word the microcontroller can transmit up to seven more data words. The EEPROM will respond with a zero after each data word received. The microcontroller must terminate the page write sequence with a stop condition. The data word address lower three (K bits are internally incremented following the receipt of each data word. The higher data word address bits are not incremented retaining the memory page row location (refer to Page write timing. Acknowledge polling To maximise bus throughput one technique is to allow the master to poll for an acknowledge signal after the start condition and the control byte for a write command have been sent. If the device is still busy implementing its write cycle then no ACK will be returned. The master can send the next read/write command when the ACK signal has finally been received. Write protect The HT4LC0 has a write-protect function and programming will then be inhibited when the WP pin is connected to VCC. Under this mode the HT4LC0 is used as a serial ROM. Read operations The HT4LC0 supports three read operations namely current address read random address read and sequential read. During read operation execution the read/write select bit should be set to 1. 5 A @ 9 HEJA + = @ 5 A @ 5 J F + @ EJE J 1 EJE= JA 9 HEJA + O? A 5 A @ 5 A @ + JH * O JA M EJD 4 9 + ; A I A N J F A H= JE Current address read The internal data word address counter maintains the last address accessed during the last read or write operation incremented by one. This address stays valid between operations as long as the chip power is maintained. The address roll over during read from the last byte of the last memory page to the first byte of the first page. The address roll over during write from the last byte of the current page to the first byte of the same page. Once the device address with the read/write select bit set to one is clocked in and acknowledged by the EEPROM the current address data word is serially clocked out. The microcontroller should respond a No ACK (High signal and following stop condition (refer to Current read timing. Acknowledge Polling Flow * O JA 9 H EJA 6 E E C A L E? A = @ @ HA I I 9 H@ = @ @ HA I I 6 5 4 9 + + + 5 J F = C A 9 H EJA 6 E E C A L E? A = @ @ HA I I 9 H@ = @ @ HA I I 6 6 6 N 5 + + 5 J F + + + K H H A J4 A = @ 6 E E C A L E? A = @ @ HA I I 6 5 J F 5 + + Rev. 1.30 5 June 7 007

Random read A random read requires a dummy byte write sequence to load in the data word address which is then clocked in and acknowledged by the EEPROM. The microcontroller must then generate another start condition. The microcontroller now initiates a current address read by sending a device address with the read/write select bit high. The EEPROM acknowledges the device address and serially clocks out the data word. The microcontroller should respond with a no ACK signal (high followed by a stop condition. (refer to Random read timing. Sequential read Sequential reads are initiated by either a current address read or a random address read. After the microcontroller receives a data word it responds with an acknowledgment. As long as the EEPROM receives an acknowledgment it will continue to increment the data word address and serially clock out sequential data words. When the memory address limit is reached the data word address will roll over and the sequential read continues. The sequential read operation is terminated when the microcontroller responds with a no ACK signal (high followed by a stop condition. 4 = @ 4 A = @ 6 E E C A L E? A = @ @ HA I I 9 H@ = @ @ HA I I 5 + A L E? A = @ @ HA I I 5 + 6 5 J F + + 5 A G K A JE= 4 A = @ 6 E E C A L E? A = @ @ HA I I 6 6 6 N 5 J F 5 + + + Timing Diagrams JB JH J0 1/ 0 5 + J 9 J5 7 5 6 J0 5 6 J0 6 J5 7 6 J5 7 5 6 7 6 J5 J 8 = E@ 8 = E@ J* 7. 5 + & JD > EJ + 9 H@ 5 J F + @ EJE J9 4 + @ EJE Note: The write cycle time t WR is the time from a valid stop condition of a write sequence to the end of the valid start condition of sequential command. Rev. 1.30 6 June 7 007

Package Information 8-pin DIP (300mil Outline Dimensions * & # " 0 + - / = 1. Symbol Dimensions in mil Min. Nom. Max. A 355 375 B 40 60 C 15 135 D 15 145 E 16 0 F 50 70 G 100 H 95 315 I 335 375 0 15 Rev. 1.30 7 June 7 007

8-pin SOP (150mil Outline Dimensions & # * " + + / 0 -. = Symbol Dimensions in mil Min. Nom. Max. A 8 44 B 149 157 C 14 0 C 189 197 D 53 69 E 50 F 4 10 G 8 H 4 1 0 10 Rev. 1.30 8 June 7 007

8-pin TSSOP Outline Dimensions & # - " A * 4 O " + 4-4 5 - + G Symbol Dimensions in mm Min. Nom. Max. A 1.05 1.0 A1 0.05 0.15 A 0.95 1.05 B 0.5 C 0.11 0.15 D.90 3.10 E 6.0 6.60 E1 4.30 4.50 e 0.65 L 0.50 0.70 L1 0.90 1.10 y 0.10 0 8 Rev. 1.30 9 June 7 007

Product Tape and Reel Specifications Reel Dimensions 6 * + 6 SOP 8N Symbol Description Dimensions in mm A Reel Outer Diameter 3301.0 B Reel Inner Diameter 61.5 C Spindle Hole Diameter 13.0+0.5 0. D Key Slit Width.00.15 T1 Space Between Flange 1.8+0.3 0. T Reel Thickness 18.0. TSSOP 8L Symbol Description Dimensions in mm A Reel Outer Diameter 3301.0 B Reel Inner Diameter 61.5 C Spindle Hole Diameter 13.0+0.5 0. D Key Slit Width 0.5 T1 Space Between Flange 1.8+0.3 0. T Reel Thickness 18.0. Rev. 1.30 10 June 7 007

Carrier Tape Dimensions J -. 9 + * SOP 8N Symbol Description Dimensions in mm W Carrier Tape Width 1.0+0.3 0.1 P Cavity Pitch 8.00.1 E Perforation Position 1.750.1 F Cavity to Perforation (Width Direction 5.50.1 D Perforation Diameter 1.550.1 D1 Cavity Hole Diameter 1.5+0.5 P0 Perforation Pitch 4.00.1 P1 Cavity to Perforation (Length Direction.00.1 A0 Cavity Length 6.40.1 B0 Cavity Width 5.00.1 K0 Cavity Depth.10.1 t Carrier Tape Thickness 0.30.05 C Cover Tape Width 9.3 TSSOP 8L Symbol Description Dimensions in mm W Carrier Tape Width 1.0+0.3 0.1 P Cavity Pitch 8.00.1 E Perforation Position 1.750.1 F Cavity to Perforation (Width Direction 5.50.5 D Perforation Diameter 1.5+0.1 D1 Cavity Hole Diameter 1.5+0.1 P0 Perforation Pitch 4.00.1 P1 Cavity to Perforation (Length Direction.00.1 A0 Cavity Length 7.00.1 B0 Cavity Width 3.60.1 K0 Cavity Depth 1.60.1 t Carrier Tape Thickness 0.30.013 C Cover Tape Width 9.3 Rev. 1.30 11 June 7 007

Holtek Semiconductor Inc. (Headquarters No.3 Creation Rd. II Science Park Hsinchu Taiwan Tel: 886-3-563-1999 Fax: 886-3-563-1189 http://www.holtek.com.tw Holtek Semiconductor Inc. (Taipei Sales Office 4F- No. 3- YuanQu St. Nankang Software Park Taipei 115 Taiwan Tel: 886--655-7070 Fax: 886--655-7373 Fax: 886--655-7383 (International sales hotline Holtek Semiconductor Inc. (Shanghai Sales Office 7th Floor Building No.889 Yi Shan Rd. Shanghai China 0033 Tel: 86-1-6485-5560 Fax: 86-1-6485-0313 http://www.holtek.com.cn Holtek Semiconductor Inc. (Shenzhen Sales Office 5/F Unit A Productivity Building Cross of Science M 3rd Road and Gaoxin M nd Road Science Park Nanshan District Shenzhen China 518057 Tel: 86-755-8616-9908 86-755-8616-9308 Fax: 86-755-8616-97 Holtek Semiconductor Inc. (Beijing Sales Office Suite 171 Jinyu Tower A19 West Xuan Wu Men Street Xicheng District Beijing China 100031 Tel: 86-10-6641-0030 86-10-6641-7751 86-10-6641-775 Fax: 86-10-6641-015 Holtek Semiconductor Inc. (Chengdu Sales Office 709 Building 3 Champagne Plaza No.97 Dongda Street Chengdu Sichuan China 610016 Tel: 86-8-6653-6590 Fax: 86-8-6653-6591 Holtek Semiconductor (USA Inc. (North America Sales Office 4679 Fremont Blvd. Fremont CA 94538 Tel: 1-510-5-9880 Fax: 1-510-5-9885 http://www.holtek.com Copyright 007 by HOLTEK SEMICONDUCTOR INC. The information appearing in this Data Sheet is believed to be accurate at the time of publication. However Holtek assumes no responsibility arising from the use of the specifications described. The applications mentioned herein are used solely for the purpose of illustration and Holtek makes no warranty or representation that such applications will be suitable without further modification nor recommends the use of its products for application that may present a risk to human life due to malfunction or otherwise. Holteks products are not authorized for use as critical components in life support devices or systems. Holtek reserves the right to alter its products without prior notification. For the most up-to-date information please visit our web site at http://www.holtek.com.tw. Rev. 1.30 1 June 7 007