256M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE W29GL256P

256M-BIT 30-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE W29GL256P

Table of Contents 1 GENERAL DESCRIPTION 1 2 FEATURES 1 3 PIN CONFIGURATION 2 4 BLOCK DIAGRAM 3 5 PIN DESCRIPTION 3 6 ARRAY ARCHITECTURE 4 61 Sector Address Table 4 7 FUNCTIONAL DESCRIPTION 5 71 Device Bus Operation 5 72 Instruction Definitions 6 721 Reading Array Data 6 722 Page Mode Read 7 723 Device Reset Operation 8 724 Standby Mode 8 725 Output Disable Mode 8 726 Write Operation 8 727 Byte/Word Selection 9 728 Automatic Programming of the Memory Array 9 729 Erasing the Memory Array 10 7210 Erase Suspend/Resume 11 7211 Sector Erase Resume 11 7212 Program Suspend/Resume 12 7213 Program Resume 12 7214 Write Buffer Programming Operation 12 7215 Buffer Write Abort 13 7216 Accelerated Programming Operation 13 7217 Automatic Select Bus Operation 13 7218 Automatic Select Operations 14 7219 Automatic Select Instruction Sequence 14 7220 Enhanced Variable IO (EVIO) Control 15 7221 Hardware Data Protection Options 15 7222 Inherent Data Protection 15 7223 Power Supply Decoupling 15 73 Enhanced Sector Protect/Un-protect 16 731 Lock Register 17 732 Individual (Non-Volatile) Protection Mode 18 74 Security Sector Flash Memory Region 21 741 Factory Locked: Security Sector Programmed and Protected at factory 21 742 Customer Lockable: Security Sector Not Programmed or Protected 21 75 Instruction Definition Tables 22 76 Common Flash Memory Interface (CFI) Mode 26 761 Query Instruction and Common Flash memory Interface (CFI) Mode 26 i Revision A

8 ELECTRICAL CHARACTERISTICS 30 81 Absolute Maximum Stress Ratings 30 82 Operating Temperature and Voltage 30 83 DC Characteristics 31 84 Switching Test Circuits 32 841 Switching Test Waveform 32 85 AC Characteristics 33 851 Instruction Write Operation 34 852 Read / Reset Operation 35 853 Erase/Program Operation 37 854 Write Operation Status 46 855 WORD/BYTE CONFIGURATION (#BYTE) 50 856 DEEP POWER DOWN MODE 52 857 WRITE BUFFER PROGRAM 52 86 Recommended Operating Conditions 53 861 At Device Power-up 53 87 Erase and Programming Performance 54 88 Data Retention 54 89 Latch-up Characteristics 54 810 Pin Capacitance 54 9 PACKAGE DIMENSIONS 55 91 TSOP 56-pin 14x20mm 55 92 Low-Profile Fine-Pitch Ball Grid Array, 64-ball 11x13mm (LFBA64) 56 10 ORDERING INFORMATION 57 101 Ordering Part Number Definitions 57 102 Valid Part Numbers and Top Side Marking 58 11 HISTORY 59 ii Revision A

List of Figures Figure 3-1 LFBGA64 TOP VIEW 2 Figure 3-2 56-PIN STANDARD TSOP (TOP VIEW) 2 Figure 4-1 Block Diagram 3 Figure 7-1 Enhanced Sector Protect/Un-protect IPB Program Algorithm 16 Figure 7-2 Lock Register Program Algorithm 17 Figure 7-3 IPB Program Algorithm 19 Figure 8-1 Maximum Negative Overshoot 30 Figure 8-2 Maximum Positive Overshoot 30 Figure 8-3 Switch Test Circuit 32 Figure 8-4 Switching Test Waveform 32 Figure 8-5 Instruction Write Operation Waveform 34 Figure 8-6 Read Timing Waveform 35 Figure 8-7 #RESET Timing Waveform 36 Figure 8-8 Automatic Chip Erase Timing Waveform 37 Figure 8-9 Automatic Chip Erase Algorithm Flowchart 38 Figure 8-10 Automatic Sector Erase Timing Waveform 39 Figure 8-11 Automatic Sector Erase Algorithm Flowchart 40 Figure 8-12 Erase Suspend/Resume Flowchart 41 Figure 8-13 Automatic Program Timing Waveform 42 Figure 8-14 Accelerated Program Timing Waveform 42 Figure 8-15 CE# Controlled Write Timing Waveform 43 Figure 8-16 Automatic Programming Algorithm Flowchart 44 Figure 8-17 Silicon ID Read Timing Waveform 45 Figure 8-18 Data# Polling Timing Waveform (During Automatic Algorithms) 46 Figure 8-19 Status Polling for Word Programming/Erase 47 Figure 8-20 Status Polling for Write Buffer Program Flowchart 48 Figure 8-21 Toggling Bit Timing Waveform (During Automatic Algorithms) 49 Figure 8-22 Toggle Bit Algorithm 50 Figure 8-23 #BYTE Timing Waveform For Read operations 51 Figure 8-24 Page Read Timing Waveform 51 Figure 8-25 Deep Power Down mode Waveform 52 Figure 8-26 Write Buffer Program Flowchart 52 Figure 8-27 AC Timing at Device Power-Up Reference to #RESET 53 Figure 9-1 TSOP 56-pin 14x20mm 55 Figure 10-1 Ordering Part Numbering 57 iii Revision A

List of Tables Table 5-1 Pin Description 3 Table 6-1 Sector Address 4 Table 7-1 Device Bus Operation 5 Table 7-2 Device Bus Operation (continue) 5 Table 7-3 Polling During Embedded Program Operation 9 Table 7-4 Polling During Embedded Sector Erase Operation 10 Table 7-5 Polling During Embedded Chip Erase Operation 11 Table 7-6 Polling During Embedded Erase Suspend 11 Table 7-7 Polling During Embedded Program Suspend 12 Table 7-8 Polling Buffer Write Abort Flag 13 Table 7-9 Auto Select for MFR/Device ID/Secure Silicon/Sector Protect Read 14 Table 7-10 Lock Register Bits 17 Table 7-11 Sector Protection Status Table 20 Table 7-12 Factory Locked: Security Sector 21 Table 7-13 ID Reads, Sector Verify, and Security Sector Entry/Exit 22 Table 7-14 Program, Write Buffer, CFI, Erase and Suspend 23 Table 7-15 Deep Power Down 23 Table 7-16 Lock Register and Global Non-Volatile 24 Table 7-17 IPB Functions 24 Table 7-18 Volatile DPB Functions 25 Table 7-19 CFI Mode: ID Data Values 26 Table 7-20 CFI Mode: System Interface Data Values 27 Table 7-21 CFI Mode: Device Geometry Data Values 28 Table 7-22 CFI mode: Primary Vendor-Specific Extended Query Data Values 29 Table 8-1 Absolute Maximum Stress Ratings 30 Table 8-2 Operating Temperature and Voltage 30 Table 8-3 DC Characteristics 31 Table 8-4 Test Specification 32 Table 8-5 AC Characteristics 34 Table 8-6 AC Characteristics #RESET and RY/#BY 35 Table 8-7 AC Characteristics Word/Byte Configuration (#BYTE) 50 Table 8-8 AC Characteristics for Deep Power Down 52 Table 8-9 AC Characteristics at Device Power Up 53 Table 8-10 AC Characteristics for Erase and Programming Performance 54 Table 8-11 Data Retention 54 Table 8-12 Latch-up Characteristics 54 Table 8-13 Pin Capacitance 54 Table 10-1 Valid Part Numbers and Markings 58 Table 11-1 Revision History 59 iv Revision A

GENERAL DESCRIPTION The W29GL256P Parallel Flash memory provides a storage solution for embedded system applications that require better performance, lower power consumption and higher density The device has a random access speed of 90ns and a fast page access speed of 25ns, as well as significantly faster program and erase time than the products available on the market today The W29GL256P also offers special features such as Compatible Manufacturer ID that makes the device industry standard compatible without the need to change firmware 1 FEATURES 64k-Word/128k-Byte uniform sector architecture Total 256 uniform sectors 32-Word/64-Byte write buffer Reduces total program time for multiple-word updates 8-Word/16-Byte page read buffer Secured Silicon Sector area Programmed and locked by the customer or during production 128-word/256-byte sector for permanent, safe identification using an 8-word/16-byte random electronic serial number Enhanced Sector Protect using Dynamic and Individual mechanisms Polling/Toggling methods are used to detect the status of program and erase operation Suspend and resume commands used for program and erase operations More than 100,000 erase/program cycles More than 20-year data retention Software and Hardware write protection Write-Protect all or a portion of memory Enable/Disable protection with #WP pin Top or bottom array protection Low power consumption Deep power down mode Industrial temperature range Faster Erase and Program time Erase is 15x faster than industry standard Program is 2x faster than industry standard Allows for improved production throughput and faster field updates CFI (Common Flash Interface) support Single 3V Read/Program/Erase (27-36V) Enhanced Variable IO control All input levels (address, control, and DQ) and output levels are determined by voltage on the EVIO input EVIO ranges from 165 to VCC #WP/ACC Input Accelerates programming time (when VHH is applied) for greater throughput during system production Protects first or last sector regardless of sector protection settings Hardware reset input (#RESET) resets device Ready/#Busy output (RY/#BY) detects completion of program or erase cycle Packages 56-pin TSOP 64-ball LFBGA 1 Revision A

2 PIN CONFIGURATION Figure 2-1 LFBGA64 TOP VIEW Figure 2-2 56-PIN STANDARD TSOP (TOP VIEW) 2 Revision A

3 BLOCK DIAGRAM Figure 3-1 Block Diagram 4 PIN DESCRIPTION SYMBOL PIN NAME A0-A23 Address Inputs DQ0-DQ14 Data Inputs/Outputs DQ15/A-1 Word mode DQ15 is Data Input/Output Byte mode A-1 is Address Input #CE Chip Enable #OE Output Enable #WE Write Enable #WP/ACC Hardware Write Protect/ Acceleration Pin #BYTE Byte Enable #RESET Hardware Reset RY/#BY Ready/Busy Status VCC Power Supply EVIO Enhanced Variable IO Supply VSS Ground NC No Connection Table 4-1 Pin Description 3 Revision A

5 ARRAY ARCHITECTURE 51 Sector Address Table Sector Sector Address A23-A16 Sector Size (KByte/KWord) X8 Start / Finish X16 Start / Finish SA00 0000000 128/64 000000h 01FFFFh 000000h 00FFFFh SA01 0000001 128/64 020000h 03FFFFh 010000h 01FFFFh SA254 11111110 128/64 1FC0000h 1FDFFFFh FE0000h FEFFFFh SA255 11111111 128/64 1FE0000h 1FFFFFFh FF0000h FFFFFFh Table 5-1 Sector Address Note: The address range [A23:A-1] in byte mode (#BYTE = VIL) or [A23:A0] in word mode (#BYTE = VIH) 4 Revision A

6 FUNCTIONAL DESCRIPTION 61 Device Bus Operation (4) Data I/O Mode Select #Reset #CE #WE #OE Address DQ[7:0] Device Reset Standby Mode Output Disable #BYTE VIL L X X X X High-Z High-Z VCC±03V VCC±03V X X X High-Z High-Z H L H H X High-Z High-Z VIH Data I/O DQ[15:8] High- Z High- Z High- Z #WP/ACC Read Mode H L H L AIN DOUT DOUT L/H DQ[14:8]=High- Write H L L H AIN DIN DIN Note Z (1,2) Accelerated H L L H AIN DIN DQ15=A-1 DIN VHH Program Table 6-1 Device Bus Operation Notes: 1 The first or last sector was protected if #WP/ACC=VIL 2 When #WP/ACC = VIH, the protection conditions of the outmost sector depends on previous protection conditions Refer to the enhanced protect feature 3 DQ[15:0] are input (DIN) or output (DOUT) pins according to the requests of instruction sequence, sector protection, or data polling algorithm 4 In Word Mode (Byte#=VIH), the addresses are A23 to A0 In Byte Mode (Byte#=VIL), the addresses are A23 to A-1 (DQ15), Description Control Inputs A23 ~12 A11 ~10 A9 A8 ~7 A6 A5 ~4 A3 ~2 A1 A0 DQ [7:0] L/H H L/H DQ[15:8] #CE #WE #OE BYTE WORD Read Silicon ID Manufacturer Code L H L X X VHH X L X L L L EF X 00 Device ID Cycle 1 L H L X X VHH X L X L L H 7E X 22 Cycle 2 L H L X X VHH X L X H H L 22 X 22 Cycle 3 L H L X X VHH X L X H H H 01 X 22 Sector Lock Status Verification (1) L H L SA X VHH X L X L H L 01/00 X X Secure Sector (H) (2) L H L X X VHH X L X L H H 99/19 X X Secure Sector (L) (2) L H L X X VHH X L X L H H 89/09 X X Table 6-2 Device Bus Operation (continue) Notes: 1 Sector unprotected code:00h Sector protected code:01h 2 Factory locked code: #WP protects high address sector: 99h #WP protects low address sector: 89h Factory unlocked code: #WP protects high address sector: 19h #WP protects low address sector: 09h 5 Revision A

62 Instruction Definitions The device operation can be initiated by writing specific address and data commands or sequences into the instruction register The device will be reset to reading array data when writing incorrect address and data values or writing them in the improper sequence The addresses will be latched on the falling edge of #WE or #CE, whichever happens later; while the data will be latched on the rising edge of #WE or #CE, whichever happens first Please refer to timing waveforms 621 Reading Array Data The default state after power up or a reset operation is the Read mode To execute a read operation, the chip is enabled by setting #CE and #OE active and #WE high At the same time, the required address or status register location is provided on the address lines The system reads the addressed location contents on the Data IO pins after the tce and toe timing requirements have been met Output data will not be accessible on the Data IO pins if either the device or it s outputs are not enabled by #CE or #OE being High, and the outputs will remain in a tri-state condition When the device completes an embedded memory operation (ie, Program, automatic Chip Erase or Sector Erase) successfully, it will return to the Read mode and from any address in the memory array the data can be read However, If the embedded operation fails to complete, by verifying the status register bit DQ5 (exceeds time limit flag) going high during the operations, at this time system should execute a Reset operation causing the device to return to Read mode Some operating states require a reset operation to return to Read mode such as: Time-out condition during a program or erase failed condition, indicated by the status register bit DQ5 going High during the operation Failure during either of these states will prevent the device from automatically returning to Read mode During device Auto Select mode or CFI mode, a reset operation is required to terminate their operation In the above two situations, the device will not return to the Read mode unless a reset operation is executed (either hardware reset or software reset instruction) or the system will not be able to read array data The device will enter Erase-Suspended Read mode if the device receives an Erase Suspend instruction while in the Sector Erase state The erase operation will pause (after a time delay not exceeding 20µs) prior to entering Erase-Suspend Read mode At this time data can be programmed or read from any sector that is not being erased Another way to verify device status is to read the addresses inside the sectors being erased This will only provide the contents of the status register Program operation during Erase-Suspend Read mode of valid sector(s) will automatically return to the Erase-Suspend Read mode upon successful completion of the program operation An Erase Resume instruction must be executed to exit the Erase-Suspended Read mode, at which time suspended erase operations will resume Erase operation will resume where it left off and continue until successful completion unless another Erase Suspend instruction is received 6 Revision A

622 Page Mode Read The Page Mode Read has page sizes of 16 bytes or 8 words The higher addresses A[23:3] accesses the desired page To access a particular word or byte in a page, it is selected by A[2:0] for word mode and A[2:0,A-1] for byte mode Page mode can be turned on by keeping page-read address constant and changing the intra-read page addresses The page access time is taa or tce, followed by tpa for the page read time When #CE toggles, access time is taa or tce 7 Revision A

623 Device Reset Operation Pulling the #RESET pin Low for a period equal to or greater than trp will return the device to Read mode If the device is performing a program or erase operation, the reset operation will take at most a period of tready1 before the device returns to Read mode The RY/#BY pin will remain Low (Busy Status) until the device returns to Read mode Note, the device draws larger current if the #RESET pin is held at voltages greater that GND+03V and less than or equal to VIL When the #RESET pin is held a GND±03V, the device only consumes Reset (ICC5) current It is recommended to tie the system reset signal to the #RESET pin of the flash memory This allows the device to be reset with the system and puts it in a state where the system can immediately begin reading boot code from it Executing the Reset instruction will reset the device back to the Read mode in the following situations: During an erase instruction sequence, before the full instruction set is completed Sector erase time-out period Erase failed, while DQ5 is High During program instruction sequence, before the full instruction set is completed, including the erase-suspended program instruction Program failed, while DQ5 is High as well as the erase-suspended program failure Auto-select mode CFI mode The user must issue a reset instruction to reset the device back to the Read mode when the device is in Auto-Select mode or CFI mode, or when there is a program or erase failure (DQ5 is High) When the device is performing a Programming (not program fail) or Erasing (Not erase fail) function, the device will ignore reset commands 624 Standby Mode Standby mode is entered when both #RESET and #CE are driven to VCC ±300mV (inactive state) At this time output pins are placed in the high impedance state regardless of the state of the #WE or #OE pins and the device will draw minimal standby current (ICC4) If the device is deselected during erase or program operation, the device will draw active current until the operation is completed 625 Output Disable Mode The #OE pin controls the state of the Data IO pins If #OE is driven High (VIH), all Data IO pins will remain at high impedance and if driven Low, the Data IO pins will drive data ( #OE has no affect on the RY/BY# output pin) 626 Write Operation To execute a write operation, Chip Enable (#CE) pin is driven Low and the Output Enable (#OE) is pulled high to disable the Data IO pins to a high impedance state The desired address and data should be present on the appropriate pins Addresses are latched on the falling edge of either #WE or #CE and Data is latched on the rising edge or either #CE or #WE To see an example, please refer to timing diagrams in Figure 8-5 and Figure 8-15 If an invalid write instruction, not defined in this datasheet is written to the device, it may put the device in an undefined state 8 Revision A

627 Byte/Word Selection To choose between the Byte or Word mode, the #BYTE input pin is used to select how the data is input/output on the Data IO pins and the organization of the array data If the #BYTE pin is driven High, Word mode will be selected and all 16 Data IO pins will be active If the #BYTE is pulled Low, Byte mode will be active and only Data IO DQ[7:0] will be active The remaining Data IO pins (DQ[14:8]) will be in a high impedance state and DQ15 becomes the A-1 address input pin 628 Automatic Programming of the Memory Array To program the memory array in Byte or Word mode, refer to the Instruction Definition Tables for correct cycle defined instructions that include the 2 unlocking instruction cycles, the A0h program cycle instruction and subsequent cycles containing the specified address location and the byte or word desired data content, followed by the start of the embedded algorithm to automatically program the array Once the program instruction sequence has been executed, the internal state machine commences execution of the algorithms and timing necessary for programming and cell verification Included in this operation is generating suitable program pulses, checking cell threshold voltage (VT) margins, and if any cells do not pass verification or have acceptable margins, repetitive program pulse sequence will be cycled again The internal process mechanisms will protect cells that do pass margin and verification tests from being over-programmed by prohibiting further program pulses to passing cells as failing cells continue to be run through the internal programming sequence until the pass This feature allows the user to only perform the auto-programming sequence once and the device state machine takes care of the program and verification process Array bits during programming can only change a bit status of 1 (erase state) to a 0 (programmed state) It is not possible to do the reverse with a programming operation This can only be done by first performing an erase operation Keep in mind, the internal write verification only checks and detects errors in cases where a 1 is not successfully programmed to 0 During the embedded programming algorithm process any commands written to the device will be ignored, except hardware reset or a program suspend instruction Hardware reset will terminate the program operation after a period of time, not to exceed 10µs If in the case a Program Suspend was executed, the device will enter the program suspend read mode When the embedded program algorithm is completed or the program is terminated by a hardware reset, the device will return to Read mode The user can check for completion by reading the following bits in the status register, once the embedded program operation has started: Status DQ7 DQ6 DQ5 DQ1 RY/#BY 1 In progress DQ7# Toggling 0 0 0 Exceeded time limit DQ7# Toggling 1 N/A 0 Table 6-3 Polling During Embedded Program Operation Note: 1 RY/#BY is an open drain output pin and should be connected to VCC through a high value pull-up resistor 9 Revision A

629 Erasing the Memory Array Sector Erase and Chip Erase are the two possible types of erase operations executed on the memory array Sector Erase operation erases one or more selected sectors and this can be simultaneous Chip Erase operation erases the entire memory array, except for any protected sectors 6291 Sector Erase The sector erase operation returns all selected sectors in memory to the 1 state, effectively clearing all data This action requires six instruction cycles to commence the erase operation The unlock sequence is the first two cycles, followed by the configuration cycle, the fourth and fifth are also unlock cycles, and the Sector Erase instruction is the sixth cycle An internal 50µs time-out counter is started once the sector erase instruction sequence has been completed During this time, additional sector addresses and Sector Erase commands may be issued, thus allowing for multiple sectors to be selected and erased simultaneously Once the 50µs time-out counter has reached its limit, no additional command instructions will be accepted and the embedded sector erase algorithm will commence Note, that the 50µs time-out counter restarts after every sector erase instruction sequence The device will abort and return to Read mode, if any instruction other than Sector Erase or Erase Suspend is attempted during the time-out period Once the embedded sector erase algorithm begins, all instructions except Erase Suspend or Hardware Reset will be ignored The hardware reset will abort the erase operation and return the device to the Read mode The embedded sector erase algorithm status can be verified by the following: Status DQ7 DQ6 DQ5 DQ3 1 DQ2 RY/#BY 2 Time-out period 0 Toggling 0 0 Toggling 0 In progress 0 Toggling 0 1 Toggling 0 Exceeded time limit 0 Toggling 1 1 Toggling 0 Table 6-4 Polling During Embedded Sector Erase Operation Note: 1 The DQ3 status bit is the 50µs time-out indicator When DQ3=0, the 50µs time-out counter has not yet reached zero and the new Sector Erase instruction maybe issued to specify the address of another sector to be erased When DQ3=1, the 50µs time-out counter has expired and the Sector Erase operation has already begun Erase Suspend is the only valid instruction that maybe issued once the embedded erase operation is underway 2 RY/#BY is an open drain output pin and should be connected to VCC through a high value pull-up resistor 3 When an attempt is made to erase only protected sector(s), the erase operation will abort thus preventing any data changes in the protected sector(s) DQ7 will output 0 and DQ6 will toggle briefly (100µs or less) before aborting and returning the device to Read mode If unprotected sectors are also specified, however, they will be erased normally and the protected sector(s) will remain unchanged 4 DQ2 is a localized indicator showing a specified sector is undergoing erase operation or not DQ2 toggles when user reads at the addresses where the sectors are actively being erased (in erase mode) or to be erased (in erase suspend mode) 10 Revision A

6292 Chip Erase The Chip Erase operation returns all memory locations containing a bit state of 0 to the 1 state, effectively clearing all data This action requires six instruction cycles to commence the erase operation The unlock sequence is the first two cycles, followed by the configuration cycle, the fourth and fifth are also unlock cycles, and the sixth cycle initiates the chip erase operation Once the chip erase algorithm begins, no other instruction will be accepted However, if a hardware reset is executed or the operating voltage is below acceptable levels, the chip erase operation will be terminated and automatically returns to Read mode The embedded chip erase algorithm status can be verified by the following: Status DQ7 DQ6 DQ5 DQ2 RY/#BY 1 In progress 0 Toggling 0 Toggling 0 Exceeded time limit 0 Toggling 1 Toggling 0 Table 6-5 Polling During Embedded Chip Erase Operation Note: 1 RY/#BY is an open drain pin and should be connected to VCC through a high value pull-up resistor 6210 Erase Suspend/Resume If there is a sector erase operation in progress, an Erase Suspend instruction is the only valid instruction that may be issued Once the Erase Suspend instruction is executed during the 50µs time-out period following a Sector Erase instruction, the time-out period will terminate right away and the device will enter Erase-Suspend Read mode If an Erase Suspend instruction is executed after the sector erase operation has started, the device will not enter Erase-Suspended Read mode until approximately 20µs (5µs typical) time has elapsed To determine the device has entered the Erase-Suspend Read mode, use DQ6, DQ7 and RY/#BY status to verify the state of the device Once the device has entered Erase-Suspended Read mode, it is possible to read or program any sector(s) except those being erased by the erase operation Only the contents of the status register is present when attempting to read a sector that has been scheduled to erase or be programmed when in the suspend mode A resume instruction must be executed and recommend checking DQ6 toggle bit status, before issuing another erase instruction The status register bits can be verified to determine the current status of the device: Status DQ7 DQ6 DQ5 DQ3 DQ2 DQ1 RY/#BY Erase suspend read in erase suspended sector 1 No toggle 0 N/A Toggle N/A 1 Erase suspend read in non-erase suspended sector Data Data DataData Data Data 1 Erase suspend program in non-erase suspended sector DQ7# Toggle 0 N/A N/A N/A 0 Table 6-6 Polling During Embedded Erase Suspend Instruction sets such as read silicon ID, sector protect verify, program, CFI query and erase resume can also be executed during Erase-Suspend mode, except sector and chip erase 6211 Sector Erase Resume Only in the Erase-Suspended Read mode can the Sector Erase Resume instruction be a valid command Once erase resumes, another Erase Suspend instruction can be executed, but allow a 400µs interval between Erase Resume and the next Erase Suspend instruction 11 Revision A

6212 Program Suspend/Resume Once a program operation is in progress, a Program Suspend is the only valid instruction that maybe executed Verifying if the device has entered the Program-Suspend Read mode after executing the Program-Suspend instruction, can be done by checking the RY/#BY and DQ6 Programming should halt within 15µs maximum (5µs typical) Any sector(s) can be read except those being program suspended Trying to read a sector being program suspended is invalid Before another program operation can be executed, a Resume instruction must be performed and DQ6 toggling bit status has to be verified Use the status register bits shown in the following table to determine the current state of the device: Status DQ7 DQ6 DQ5 DQ3 DQ2 DQ1 RY/#BY Program suspend read in program suspended sector Invalid 1 Program suspend read in non-program suspended sector Data Data Data Data Data Data 1 Table 6-7 Polling During Embedded Program Suspend Instruction sets such as read silicon ID, sector protect verify, program, CFI query can also be executed during Program/Erase-Suspend mode 6213 Program Resume The program Resume instruction is valid only when the device is in Program-Suspended mode Once the program resumes, another Program Suspend instruction can be executed Insure there is at least a 5µs interval between Program Resume and the next Suspend instruction 6214 Write Buffer Programming Operation Write Buffer Programming Operation, programs 64bytes or 32words in a two step programming operation To begin execution of the Write Buffer Programming, start with the first two unlock cycles, the third cycle writes the programming Sector Address destination followed by the Write Buffer Load Instruction (25h) The fourth cycle repeats the Sector Address, while the write data is the number of intended word locations to be written minus one (Example, if the number of word locations to be written is 9, then the value would be 8h) The 5 th cycle is the first starting address/data set This will be the first pair to be programmed and consequentially, sets the write-buffer-page address Repeat Cycle 5 format for each additional address/data sets to be written to the buffer Keep in mind all sets must remain within the write buffer page address range If not, operation will ABORT The write-buffer-page is selected by choosing address A[23:5] The second step will be to program the contents of the write buffer page This is done with one cycle, containing the sector address that was used in step one and the Write to Buffer Program Confirm instruction (29h) Standard suspend/resume commands can be used during the operation of the write-buffer Also, once the write buffer programming operation is finished, it ll return to the normal READ mode Write buffer programming can be conducted in any sequence However the CFI functions, autoselect, Secured Silicon sector are not functional when program operation is in progress Multiple write buffer programming operations on the same write buffer address range without intervention erase is accessible Any bit in a write buffer address range cannot be programmed from 0 back to 1 12 Revision A

6215 Buffer Write Abort Write Buffer Programming Sequence will ABORT, if the following condition takes place: The word count minus one loaded is bigger than the page buffer size (32) during, Number of Locations to Program Sector Address written is not the same as the one specified during the Write-Buffer-Load instruction If the Address/Data set is not inside the Write Buffer Page range which was set during cycle 5 s first initial write-buffer-page select address/data set No Program Confirm Instruction after the assigned number of data load cycles After Write Buffer Abort, the status register will be DQ1=1, DQ7 = DATA# (last address loaded), DQ6=toggle, DQ5=0 This status represents a Write Buffer Programming Operation was ABORTED A Write-to-Buffer-Abort Reset instruction sequence has to be written to reset the device back to the read array mode DQ1 is the bit for Buffer Write Abort When DQ1=1, the device will abort from buffer write operation and go back to read status register shown in the following table: Status DQ7 DQ6 DQ5 DQ3 DQ2 DQ1 RY/#BY Buffer Write Busy DQ7# Toggle 0 N/A N/A 0 0 Buffer Write Abort DQ7# Toggle 0 N/A N/A 1 0 Buffer Write Exceeded Time Limit DQ7# Toggle 1 N/A N/A 0 0 Table 6-8 Polling Buffer Write Abort Flag 6216 Accelerated Programming Operation The device will enter the Accelerated Programming mode by applying high voltage (VHH) to the #WP/ACC pin Accelerated Programming mode allows the system to skip the normal unlock sequences instruction and program byte/word locations directly The current drawn from the #WP/ACC pin during accelerated programming is no more that IACC1 Important Note: Do not exceed 10 accelerated programs per sector (#WP/ACC should not be held at VHH for any other function except for programming or damage to the device may occur) 6217 Automatic Select Bus Operation There are basically two methods to access Automatic Selection Operations; Automatic Select Instructions through software commands and High Voltage applied to A9 See Automatic Select Instruction Sequence later on in this section for details of equivalent instruction operations that do not require the use of VHH The following five bus operations require A9 to be raised to VHH 62171 Sector Lock Status Verification To verify the protected state of any sector using bus operations, execute a Read Operation with VHH applied to A9, the sector address present on address pins A[23:12], address pins A6, A3, A2, and A0 held Low, and address pins A1 held High If DQ0 is Low, the sector is considered not protected, and if DQ0 is High, the sector is considered to be protected 62172 Read Silicon Manufacturer ID Code Winbond s 29GL-P/29GL-S families of Parallel Flash memories feature an Industry Standard compatible Manufacturer ID code of EFh To verify the Silicon Manufacturer ID code, execute a Read Operation with VHH applied to the A9 pin and address pins A6, A3, A2, A1 and A0 are held Low The ID code can then be read on data bits DQ[7:0] 13 Revision A

62173 Read Silicon Device ID Code To verify the Silicon Device ID Codes, execute a Read Operation with VHH applied to the A9 pin and address pins A6, A3, A2, A1, and A0 have several bit combinations to return the Winbond Device ID codes of 7Eh, 22h or 01h, which is shown on the data bits DQ[7:0] See Table 7-2 62174 Read Indicator Bit DQ7 for Security Sector High and Low Address To verify that the Security Sector has been factory locked, execute a Read Operation with VHH applied to A9, address pins A6, A3, and A2 are held Low, and address pins A1 and A0 are held High If the Security Sector has been factory locked, the code 99h(Highest Address Sector) or 89h(Lowest Address Sector) will be shown on the data bits DQ[7:0] Otherwise, the factory unlocked code of 19h(H)/09(L) will be shown 6218 Automatic Select Operations The Automatic Select instruction show in Table 7-13 can be executed if the device is in one of the following modes; Read, Program Suspended, Erase-Suspended Read, or CFI At which time the user can issue (two unlock cycles followed by the Automatic Select instruction 90h) to enter Automatic Select mode Once in the Automatic Select mode, the user can query the Manufacturer ID, Device ID, Security Sector locked status, or Sector protected status multiple times without executing the unlock cycles and a Automatic Select instruction (90h) again Once in Automatic Select mode, executing a Reset instruction (F0h) will return the device back to the valid mode from which it left when the Automatic Select mode was first executed Another way previously mentioned to enter Automatic Select mode is to use one of the bus operation shown Table 7-2 in Device Bus Operation Once the high voltage (VHH) is removed from the A9 pin, the device will return back to the valid mode from which it left when the Automatic Select mode was first executed 6219 Automatic Select Instruction Sequence Accessing the manufacturer ID, device ID, and verifying whether or not secured silicon is locked and whether or not a sector protected is the purpose of Automatic Select mode There are four instruction cycles that comprise the Automatic Select mode The first two cycles are write unlock commands, followed by the Automatic Select instruction (90h) The fourth cycle is a read cycle, and the user may read at any address any number of times without entering another instruction sequence To exit the Automatic Select mode and back to read array, the Reset instruction is necessary No other instructions are allowed except the Reset Instruction once Automatic Select mode has been selected Refer to the following table for more detailed information Manufacturer ID Device ID W29GL256P Secure Silicon Address Data (hex) Representation Word X00 EF Byte X00 EF Word X01/0E/0F 227E/2222/2201 Byte X02/1C/1E 7E/22/01 Word Byte X03 X06 99/19(H) 89//09(L) 99/19(H) 89/09(L) Factory locked/unlocked Factory locked/unlocked Word (Sector address) X02 00/01 Unprotected/protected Sector Protect Verify Byte Sector address) X04 00/01 Unprotected/protected Table 6-9 Auto Select for MFR/Device ID/Secure Silicon/Sector Protect Read 14 Revision A

6220 Enhanced Variable IO (EVIO) Control The Enhanced Variable IO (EVIO) control allows the host system to set the voltage levels that the device generates and tolerates on all inputs and outputs (address, control, and DQ signals) EVIO range is 165 to VCC For example, a EVIO of 165-36 volts allows for I/O at the 18 or 3 volt levels, driving and receiving signals to and from other 18 or 3 V devices on the same data bus 6221 Hardware Data Protection Options Hardware Data Protection is the second of the two main sector protections offered by the W29GL256 62211 #WP/ACC Option By setting the #WP/ACC pin to VIL, the highest or lowest sector (device specific) is protected from all erase/program operations If #WP/ACC is set High, the highest and Lowest sector revert back to the previous protected/unprotected state Note: The max input load current can increase, if #WP/ACC pin is at VIH when the device is put into standby mode 62212 VCC Write Protect This device will not accept any write instructions when VCC is less that VWPT (VCC Write Protect Threshold) This prevents data from inadvertently being altered during power-up, power-down, a temporary power loss or to the low level of VCC If VCC is lower that VWPT, the device automatically resets itself and will ignore write cycles until VCC is greater than VWPT Once VCC rises above VWPT, insure that the proper signals are on the control pins to avoid unexpected program or erase operations 62213 Write Pulse Glitch Protection Pulses less than 5ns are viewed as glitches for control signals #CE, #WE, and #OE and will not be considered for valid write cycles 62214 Power-up Write Inhibit The device ignores the first instruction on the rising edge of #WE, if upon powering up the device, #WE and #CE are set at VIL and #OE is set at VIH 62215 Logical Inhibit A write cycle is ignored when either #CE is at VIH, #WE is at VIH, or #OE is at VIL A valid write cycle requires both #CE and #WE are at VIL with #OE at VIH 6222 Inherent Data Protection The device built-in mechanism will reset to Read mode during power up to avoid accidental erasure or programming 62221 Instruction Completion Invalid instruction sets will result in the memory returning to read mode Only upon a successful completion of a valid instruction set will the device begin its erase or program operation 62222 Power-up Sequence The device is placed in Read mode, during power-up sequence 6223 Power Supply Decoupling To reduce noise effects, a 01µF capacitor is recommended to be connected between VCC and GND 15 Revision A

63 Enhanced Sector Protect/Un-protect This device is set from the factory in the Individual Protection mode of the Enhanced Sector Protect scheme The user can disable or enable the programming or erasing operation to any individual sector or whole chip The figure below helps describe an overview of these methods The device defaults to the Individual mode and all sectors are unprotected when shipped from the factory The following flow chart shows the detailed algorithm of Enhanced Sector Protect: Start Individual Protection Mode (Default) Set IPB Lock Bit IPB=0 IPB lock Bit locked All IPB not changeable IPB=1 IPB Lock bit Unlocked IPB is Changeable Dynamic Write Protect bit (DPB) DPB=0 Sector Protect DPB=1 Sector Unprotect Sector Array Individual Protect bit (IPB) IPB=0 Sector Protect IPB=1 Sector Unprotect DPB 0 DPB 1 DPB 2 DPB + n SA 0 SA 1 SA 2 SA + n IPB 0 IPB 1 IPB 2 IPB + n Figure 6-1 Enhanced Sector Protect/Un-protect IPB Program Algorithm 16 Revision A

631 Lock Register User can choose Secured Silicon Sector Protection Bit for security sector protection method via setting the Lock Register bit, DQ0 Lock Register is a 16-bit one time programmable register Once programmed DQ0, will be locked in that mode permanently Once the Instruction Set Entry instruction sequence for the Lock Register Bits is issued, all sectors read and write functions are disabled until Lock Register Exit sequence has been executed The memory sectors and extended memory sector protection is configured using the Lock Register Table 6-10 DQ[15:1] Don t Care Lock Register Bits DQ0 Secured Silicon Sector Protection Bit Start Write Data AAh, Address 555h Write Data 55h, Address2AAh Lock Register instruction set entry Write Data 40h, Address 555h Write Data A0h, Address don t care Write Program Data, Address don t care Lock Register data program Data # Polling Algorithm Done YES NO NO DQ5=1 YES Fail Pass Exit lock Register instruction Reset instruction Figure 6-2 Lock Register Program Algorithm 17 Revision A

632 Individual (Non-Volatile) Protection Mode 6321 Individual Protection Bits (IPB) The Individual Protection Bit (IPB) is a nonvolatile bit, one bit per sector, with endurance equal to that of the Flash memory array Before erasing, IPB preprogramming and verification is managed by the device, so no monitoring is necessary The Individual Protection Bits are set sector by sector by the IPB program instruction Once a IPB is set to 0, the linked sector is protected, blocking any program and/or erase functions on that sector The IPB cannot be erased individually, but executing the All IPB Erase instruction will erase all IPB simultaneously Read and write functions are disabled when IPB programming is going on for all sectors until this mode exits In case one of the protected sectors need to be unprotected, first, the IPB Lock Bit must be set to 1 by performing one of the following: power-cycle the device or perform a hardware reset Second, an All IPB Erase instruction needs to be performed Third, Individual Protection Bits need to be set once again to reflect the desired settings and finally, the IPB Lock Bit needs to be set once again which locks the Individual Protection Bits and the device functions normally once again Executing an IPB Read instruction to the device is required to verify the programming state of the IPB for any given sector Refer to the IPB Program Algorithm flow chart below for details Note: While IPB Lock Bit is set, Program and/or erase instructions will not be executed and times out without programming and/or erasing the IPB For best protection results, it is recommended to execute the IPB Lock Bit Set instruction early on in the boot code Also, protect the boot code by holding WP#/ACC = VIL Note that the IPB and DPB bits perform the same when WP#/ACC = VHH, and when WP#/ACC =VIH While in the IPB command mode, read within that sector will bring the IPB status back for that sector All Read must be executed by the read mode Issuing the IPB Instruction Set Exit will reset the device to normal read mode enabling reads and writes for the array 6322 Dynamic Protection Bits (DPB) Dynamic Protection allows the software applications to easily protect sectors against unintentional changes, although, the protection can be readily disabled when changes are needed All Dynamic Protection Bits (DPB) are individually linked to their associated sectors and these volatile bits can be modified individually (set or cleared) The DPB provide protection schemes for only unprotected sectors that have their associated IPB cleared To change a DPB, the DPB Instruction Set Entry must be executed first and then either the DPB Set (programmed to 0 ) or DPB Clear (erased to 1 ) commands have to be executed This places each sector in the protected or unprotected state separately To exit the DPB mode, execute the DPB Instruction Set Exit instruction Note: When the parts are first shipped, the IPB are cleared (erased to 1 ) and upon power up or reset, the DPB can be set or cleared 18 Revision A

IPB instruction set entry Program IPB Read DQ[7:0] twice NO DQ6=Toggle? YES DQ5=1? NO Wait 500µs YES Read DQ[7:0] twice Read DQ[7:0] twice NO DQ6=Toggle? YES DQ0= 1 (Erase) or 0 (Program) NO Pass YES Program Fail Write Reset CMD IPB instruction set Exit Figure 6-3 IPB Program Algorithm Note: 1 IPB program/erase status polling flowchart: Check DQ6 toggle, when DQ6 stop toggle, the read status is 00h/01h (00h for program and 01h for erase, otherwise the status is fail and exit 6323 Individual Protection Bit Lock Bit The Individual Protection Bit Lock Bit (IPBLK) is a global lock bit to control all IPB states It is a singular volatile bit If the IPBLK is set ( 0 ), all IPB are locked and all sectors are protected or unprotected according to their individual IPB When IPBLK=1 (cleared), all IPB are unlocked and allowed to be set or cleared To clear the IPB Lock Bit, a hardware reset or a power-up cycle must be executed 19 Revision A

Sector Protection Status DPB IPBLK IPB Sector Status clear clear clear Unprotect, DPB and IPB are changeable clear clear set Protect, DPB and IPB are changeable clear set clear Unprotect, DPB is changeable clear set set Protect, DPB is changeable set clear clear Protect, DPB and IPB are changeable set clear set Protect, DPB and IPB are changeable set set clear Protect, DPB is changeable set set set Protect, DPB is changeable Table 6-11 Sector Protection Status Table 20 Revision A

64 Security Sector Flash Memory Region An extra memory space length of 128 words is used as the Security Sector Region which can be factory locked or customer lockable To enquire about the lock status of the device, the customer can issue a Security Sector Protect Verify or Security Sector Factory Protect Verify using Automatic Select Address 03h and DQ7 The security sector region is unprotected when shipped from factory and the security silicon indicator bit (DQ7) is set to "0" for a customer lockable device The security sector region is protected when shipped from factory and the security silicon sector indicator bit is set to "1" for a factory-locked device 641 Factory Locked: Security Sector Programmed and Protected at factory In a factory locked device, the Security Sector is permanently locked prior to factory shipment The ESN occupies addresses 00000h to 0000Fh in byte mode or 00000h to 00007h in word mode since the device has a 16-byte (8-word) ESN(Electronic Serial Number) in the security region Security Silicon Sector Address Range 000000h-000007h 000008h-00007Fh Table 6-12 Standard Factory Locked ESN Inaccessible Factory Locked: Security Sector Express Flash Factory Locked ESN or Determined by Customer Determined by Customer 642 Customer Lockable: Security Sector Not Programmed or Protected Customer Lockable Determined by Customer Important Notice; Once the security silicon sector is protected (Lock Register OTP DQ0 = 0, Security Sector indicator DQ7 bit= 0 ), there is no way to unprotect the security silicon sector and the contents of the memory region can no longer be programmed Once the security silicon is locked and verified, an Exit Security Sector Region instruction must be executed to get back to the Read Array mode A power cycle, or a hardware reset will also return the device to read array mode This region can act as extra memory space when this security feature is not utilized It is important to note, the security sector region is a One Time Programmable (OTP) region You can overwrite a WORD, but you cannot change the state of a programmed cell 21 Revision A

65 Instruction Definition Tables Automatic Select Instruction Read Mode Reset Mode Silicon ID Device ID Factory Protect Verify Sector Protect Verify Security Sector Region WORD Add BYTE Add WORD XXX BYTE XXX 1st Bus Cycle 2nd Bus Cycle 3rd Bus Cycle 4th Bus Cycle 5th Bus Cycle 6 th Bus Cycle ADD DATA ADD DATA ADD DATA ADD DATA ADD DATA ADD DATA Data Data F0 F0 WORD 555 AA 2AA 55 555 90 X00 EF BYTE AAA AA 555 55 AAA 90 X00 EF WORD 555 AA 2AA 55 555 90 X01 ID1 X0E ID2 X0F ID3 BYTE AAA AA 555 55 AAA 90 X02 ID1 X1C ID2 X1E ID3 WORD 555 AA 2AA 55 555 90 X03 BYTE AAA AA 555 55 AAA 90 X06 99/19(H) 89/09(L) 99/19(H) 89/09(L) WORD 555 AA 2AA 55 555 90 (SA)X02 00/01 BYTE AAA AA 555 55 AAA 90 (SA)X04 00/01 WORD 555 AA 2AA 55 555 88 BYTE AAA AA 555 55 AAA 88 WORD 555 AA 2AA 55 555 90 XXX 00 Exit Security Sector BYTE AAA AA 555 55 AAA 90 XXX 00 Table 6-13 ID Reads, Sector Verify, and Security Sector Entry/Exit 22 Revision A

Instruction Program Write to Buffer Program Write to Buffer Program Abort Reset Write to Buffer Program Confirm Chip Erase Sector Erase CFI Read Program/Erase Suspend 1st Bus Cycle 2nd Bus Cycle 3rd Bus Cycle 4th Bus Cycle 5th Bus Cycle 6 th Bus Cycle ADD DATA ADD DATA ADD DATA ADD DATA ADD DATA ADD DATA WORD 555 AA 2AA 55 555 A0 Add Data BYTE AAA AA 555 55 AAA A0 Add Data WORD 555 AA 2AA 55 SA 25 SA N-1 WA WD WBL WD BYTE AAA AA 555 55 SA 25 SA N-1 WA WD WBL WD WORD 555 AA 2AA 55 555 F0 BYTE AAA AA 555 55 AAA F0 WORD SA 29 BYTE SA 29 WORD 555 AA 2AA 55 555 80 555 AA 2AA 55 555 10 BYTE AAA AA 555 55 AAA 80 AAA AA 555 55 AAA 10 WORD 555 AA 2AA 55 555 80 555 AA 2AA 55 SA 30 BYTE AAA AA 555 55 AAA 80 AAA AA 555 55 SA 30 WORD 55 98 BYTE AA 98 WORD XXX BYTE XXX WORD XXX 30 Program/Erase Resume BYTE XXX 30 Table 6-14 Program, Write Buffer, CFI, Erase and Suspend B0 B0 WA=WRITE ADDRESS, WD=WRITE DATA, SA=SECTOR ADDRESS, N-1=WORD COUNT, WBL=WRITEBUFFER LOCATION, ID1/ID2/ID3: REFER TO Table 7-2 FOR DETAIL ID Instruction 1st Bus Cycle 2nd Bus Cycle 3rd Bus Cycle 4th Bus Cycle 5th Bus Cycle ADD DATA ADD DATA ADD DATA ADD DATA ADD DATA Deep Power Down Table 6-15 WORD 555 AA 2AA 55 XXX B9 ENTER BYTE AAA AA 555 55 XXX B9 WORD XXX AB EXIT BYTE XXX AB Deep Power Down 23 Revision A

Lock Register Global Non-Volatile Instruction Lock Register Instruction Set Entry Program Read Lock Register Instruction Exit IPB Instruction Set Entry IPB Program All IPB Erase 1st Bus Cycle 2nd Bus Cycle 3rd Bus Cycle 4th Bus Cycle 5th Bus Cycle ADD DATA ADD DATA ADD DATA ADD DATA ADD DATA WORD 555 AA 2AA 55 555 40 BYTE AAA AA 555 55 AAA 40 WORD XXX A0 XXX DATA BYTE XXX A0 XXX DATA WORD XXX DATA BYTE XXX DATA WORD XXX 90 XXX 00 BYTE XXX 90 XXX 00 WORD 555 AA 2AA 55 555 C0 BYTE AAA AA 555 55 AAA C0 WORD XXX A0 SA 00 BYTE XXX A0 SA 00 WORD XXX 80 00 30 BYTE XXX 80 00 30 WORD SA 00/01 IPB Status Read BYTE SA 00/01 Table 6-16 Lock Register and Global Non-Volatile Instruction 1st Bus Cycle 2nd Bus Cycle 3rd Bus Cycle 4th Bus Cycle 5th Bus Cycle ADD DATA ADD DATA ADD DATA ADD DATA ADD DATA Global Non- Volatile IPB Instruction Set Exit WORD XXX 90 XXX 00 BYTE XXX 90 XXX 00 Global Volatile Freeze IPB Instruction Set Entry IPB Lock Set IPB Lock Status Read WORD 555 AA 2AA 55 555 50 BYTE AAA AA 555 55 AAA 50 WORD XXX A0 XXX 00 BYTE XXX A0 XXX 00 WORD XXX 00/01 BYTE XXX 00/01 IPB Lock Instruction WORD XXX 90 XXX 00 Set Exit BYTE XXX 90 XXX 00 Table 6-17 IPB Functions 24 Revision A