1SS106. Silicon Schottky Barrier Diode for Various Detector, High Speed Switching

Similar documents
1SS286. Silicon Schottky Barrier Diode for Various Detector, High Speed Switching

HSM88WK. Proof against high voltage. MPAK package is suitable for high density surface mounting and high speed assembly.

HSM107S. Silicon Schottky Barrier Diode for System Protection. ADE F(Z) Rev 6 Sep Features. Ordering Information.

1S2075(K) Silicon Epitaxial Planar Diode for High Speed Switching. ADE A (Z) Rev. 1 Aug Features. Ordering Information.

HZ-P Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter

HZM6.8WA. Silicon Epitaxial Planar Zener Diode for Surge Absorb. ADE A(Z) Rev 1 Feb. 1, Features. Ordering Information.

Unit: mm Max Max Max Min 5.06 Max Min ± ± 0.10

2SB727(K) Silicon PNP Epitaxial. Medium speed and power switching complementary pair with 2SD768(K) Base 2. Collector (Flange) 3.

2SK213, 2SK214, 2SK215, 2SK216

2SK439. Silicon N-Channel MOS FET. Application. Outline. VHF amplifier SPAK. 1. Gate 2. Source 3. Drain

HD74HC174. Hex D-type Flip-Flops (with Clear) ADE (Z) 1st. Edition Sep Description. Features. Function Table

2SK2220, 2SK2221. Silicon N-Channel MOS FET. ADE (Z) 1st. Edition Mar Application. Features. Outline

HD74HC09. Quad. 2-input AND Gates (with open drain outputs) Features. Pin Arrangement

HD74HC74. Dual D-type Flip-Flops (with Preset and Clear)

2SK1056, 2SK1057, 2SK1058

HD74HC00. Quad. 2-input NAND Gates. Features. Pin Arrangement

2SK522. Silicon N-Channel Junction FET. Application. Outline. VHF amplifier, Mixer, local oscillator SPAK. 1. Gate 2. Source 3.

HD74HC273. Octal D-type Flip-Flops (with Clear) ADE (Z) 1st. Edition Sep Description. Features. Function Table

HD74HC of-8-line Data Selector/Multiplexer. Description. Features. Function Table

HD74HC bit Parallel-out Shift Register. ADE (Z) 1st. Edition Sep Description. Features. Function Table

HD74AC240/HD74ACT240

HL6321G/22G. AlGaInP Laser Diodes

Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.

Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.

Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.

2SJ76, 2SJ77, 2SJ78, 2SJ79

2SD2103. Silicon NPN Triple Diffused. Application. Outline. Low frequency power amplifier TO-220FM Base 2. Collector 3. Emitter 2.

Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply. Type No. Mark Package Code HZS Series Type No. MHD B 7

HM6264B Series. 64 k SRAM (8-kword 8-bit)

Silicon Planar Zener Diode for Low Noise Application. Part No. Cathode Band Package Name Package Code HZ-L Series Navy blue DO-35 GRZZ0002ZB-A 7 B 2

HL6319G/20G. 638nm / 10mW AlGaInP Laser Diode

Old Company Name in Catalogs and Other Documents

DF2S6.8FS DF2S6.8FS. 1. Applications. 2. Packaging and Internal Circuit Rev.5.0. Start of commercial production.

DF2S16FS DF2S16FS. 1. Applications. 2. Packaging and Internal Circuit Rev Toshiba Corporation

3. Absolute Maximum Ratings (Note) (Unless otherwise specified, T a = 25 ) Symbol V ESD. P PK I PP T j T stg

DATA SHEET ZENER DIODES 1 W DO-41 GLASS SEALED PACKAGE

DF10G7M1N DF10G7M1N. 1. Applications. 2. Packaging and Internal Circuit Rev.5.0. Start of commercial production

Outline Drawings [mm] Connection diagram TFP. Item Symbols Conditions Ratings Units Repetitive peak reverse voltage VRRM 120 V

DF2B6M4SL DF2B6M4SL. 1. General. 2. Applications. 3. Features. 4. Packaging Rev.4.0. Start of commercial production

SOD-723 Electrostatic discharge *2 ESD ±30 kv Junction temperature Tj 150 C

PMEG2010EH; PMEG2010EJ; PMEG2010ET

TOSHIBA Schottky Barrier Diode CMS16

TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CMS05

DZ5X120D0R Silicon epitaxial planar type

TOSHIBA Zener Diode Silicon Epitaxial Type. CRY62 to CRZ39

DUAL REVERSIBLE MOTOR DRIVER MB3863

DZ4J036K0R Silicon epitaxial planar type

pcs / reel (standard) Temperature coefficient of zener voltage *3 SZ IZ = 5 ma Terminal Capacitance Ct VR = 0 V, f = 1 MHz

Packaging 1. Cathode 2. Anode V Zener operating resistance. 120 Reverse current IR VR = 1 V

DZ L Silicon epitaxial planar type

Old Company Name in Catalogs and Other Documents

DZ2S180C0L Silicon epitaxial planar type

ZENER DIODES RD2.0S to RD150S

300 Zener rise operating resistance RZK IZ = 0.5 ma. 300 Reverse current A Temperature coefficient of zener voltage *3 SZ IZ = 2 ma

Old Company Name in Catalogs and Other Documents

PMEG1030EH; PMEG1030EJ

1.0 V Zener voltage *1, *2 VZ IZ = 5 ma Zener operating resistance RZ IZ = 5 ma. 40 Zener rise operating resistance RZK IZ = 0.

20 Zener rise operating resistance RZK IZ = 0.5 ma. 60 Reverse current. 0.1 A Temperature coefficient of zener voltage *3 SZ IZ = 5 ma IR VR = 4 V

1Z6.2~1Z390, 1Z6.8A~1Z30A

Zener diode KDZ22B KDZ22B. Diodes. Rev.F 1/4. Applications Dimensions (Unit : mm) Land size figure (Unit : mm) Voltage regulation

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

Low forward voltage Ultra small SMD plastic package Low capacitance Flat leads: excellent coplanarity and improved thermal behavior

PMEG3015EH; PMEG3015EJ

Zener diode TDZ30 TDZ30. Diodes. Rev.D 1/4. Applications Dimensions (Unit : mm) Land size figure (Unit : mm) Constant voltage control

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

CRY62~CRZ47 CRY62~CRZ47. Applications: Communication, Control and Measurement Equipment Constant Voltage Regulation Transient Suppressors

DATA SHEET ZENER DIODES 1.0 W PLANAR TYPE 2-PIN SMALL POWER MINI MOLD. Parameter Symbol Ratings Unit Remarks

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

FM1233A 3-Pin µc Supervisor Circuit

Connecting EPSON Display Controllers to Topway LCD Panels

RN1601, RN1602, RN1603 RN1604, RN1605, RN1606

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

Dimensions (Unit : mm) Each lead has same dimension. ROHM : UMD4 JEDEC : SOT-343 JEITA : SC-82 dot (year week factory) 1Pin Mark

Zener diode CDZ3.6B CDZ3.6B. Diodes 1/4. Applications Dimensions (Unit : mm) Land size figure (Unit : mm) Constant voltage control

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SGU04FU IN A GND

VHF variable capacitance double diode. Electronic tuning in FM radio applications.

PESDALC143T5VU Low Capacitance ESD Protector

Zener diode PTZ5.1B PTZ5.1B. Diodes. Rev.F 1/4. Applications Dimensions (Unit : mm) Land size figure (Unit : mm) Voltage regulation

PESDUC2FD5VB ESD Protector

Low forward voltage Ultra small SMD plastic package Low capacitance Flat leads: excellent coplanarity and improved thermal behavior.

S1V3G340 External SPI-Flash Select Guide

PESDLC363T5VU ESD Protector

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

Single-Phase 6.0A Glass Passivated Bridge Rectifier

General-purpose Zener diodes in a SOD323F (SC-90) very small and flat lead Surface-Mounted Device (SMD) plastic package.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

Particle Beam Therapy System

BDE2S5.0 BDE2S5.0. ESD Protection Diodes. In Ultra Small DFN1006-2L Package. Package Type DFN1006-2L

SRV05-4A. Green Products. Description. Features. China - Germany - Korea - Singapore - United States - smc-diodes.

ESD NOISE CLIPPING DIODE NNCD2.0DA to NNCD39DA

SMP75. Trisil for telecom equipment protection. Features. Description. Applications. Benefits

Zener diode UDZS15B UDZS15B. Diodes. Rev.C 1/4. Applications Dimensions (Unit : mm) Land size figure (Unit : mm) Constant voltage control 0.9MIN.

PESD5V0U2BT. 1. Product profile. Ultra low capacitance bidirectional double ESD protection diode. 1.1 General description. 1.

Dual back-to-back Zener diode

2SK117 2SK117. Low Noise Audio Amplifier Applications. Maximum Ratings (Ta 25 C) Electrical Characteristics (Ta 25 C)

BAT42W/BAT43W SURFACE MOUNT SCHOTTKY BARRIER DIODE

1N5221B - 1N5263B Zener Diodes

SRV05-4A TVS Arrays. Mechanical Characteristics. Applications

PESDNC553T5VU Normal Capacitance ESD Protector

Transcription:

1SS6 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-153A (Z) Rev. 1 Oct. 1998 Features Detection efficiency is very good. Small temperature coefficient. High reliability with glass seal. Ordering Information Type No. Cathode 2nd band Mark Package Code 1SS6 White White H DO-35 Outline H 1 2 2nd band Cathode band 1. Cathode 2. Anode

1SS6 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Value Unit Reverse voltage V R V Average rectified current I O 30 ma Junction temperature Tj 125 C Storage temperature Tstg 55 to +125 C Electrical Characteristics (Ta = 25 C) Item Symbol Min Typ Max Unit Test Condition Forward current I F 4.5 ma V F = 1V Reverse current I R 70 µa V R = 6V Capacitance C 1.5 pf V R = 1V, f = 1MHz Rectifier efficiency η 70 % Vin = 2Vrms, f = 40MHz, R L = 5kΩ, C L = 20pF ESD-Capability *1 0 V C = 200pF, Both forward and reverse direction 1 pulse. Notes: 1. Failure criterion; I R 140µA at V R = 6V Rev.1, Oct. 1998, page 2 of 5

1SS6 Main Characteristic -1-2 Forward current I F (A) -2-3 -4 Reverse current I R (A) -3-4 -5-5 0 0.4 0.8 1.2 1.6 2.0 Forward voltage V (V) F -6 0 2 4 6 8 Reverse voltage V R (V) Fig.1 Forward current Vs. Forward voltage Fig.2 Reverse current Vs. Reverse voltage f=1mhz 0 Capacitance C (pf) 1.0 Rectifier efficiency η (%) 80 60 40 20-1 -1 1.0 Reverse voltage V R (V) 0 0 0.5 1.0 1.5 2.0 2.5 3.0 Input voltage Vin (Vrms) Fig.3 Capacitance Vs. Reverse voltage Fig.4 Rectifier efficiency Vs. Input voltage Vin Rev.1, Oct. 1998, page 3 of 5

1SS6 Package Dimensions 26.0 Min 4.2 Max 26.0 Min 2.0 0.5 H 1 2 2nd band (White) Cathode band (White) 1. Cathode 2. Anode Hitachi Code JEDECCode EIAJCode Weight(g) DO-35 DO-35 SC-48 0.13 Rev.1, Oct. 1998, page 4 of 5

1SS6 Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi s or any third party s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi s sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 0-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-59 URL NorthAmerica : http://semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia : http://sicapac.hitachi-asia.com Japan : http://www.hitachi.co.jp/sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher Straße 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (5), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 4.0 Rev.1, Oct. 1998, page 5 of 5