AN1839 APPLICATION NOTE How to Use a Small Page ST NAND Flash Memory in an Application Designed for a Toshiba Device This Application Note describes how to use an STMicroelectronics Small Page (528 Byte/ 264 Word Page) NAND Flash memory, to replace an equivalent Toshiba memory, in a application initially designed for a Toshiba device. For further information, please refer to ST s NAND128-A, NAND256-A, NAND512-A, NAND01G-A, 528 Byte/ 264 Word Page datasheet. INTRODUCTION The ST NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses NAND cell technology. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 528 (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width. Thanks to the high density, low cost per bit and fast sequential read and write speeds, these ST Small Page NAND Flash memories are particularly suited for code and data storage. They are fully compatible with the Toshiba 528 Byte/264 Word Page family of NAND Flash memories and can be used to replace them in any application. Table 1. and Table 2., list the NAND 528 Byte/264 Word Page Flash memory products, from 128 Mbit up to 1 Gbit, offered by STMicroelectronics and Toshiba. The part numbering schemes used by STMicroelectronics and Toshiba are described in Table 3. and Table 4., respectively. November 2004 1/11
TABLE OF CONTENTS INTRODUCTION................................................................... 1 Table 1. ST Nand Flash 528 Byte / 264 Word Page Family.............................. 3 Table 2. Toshiba Nand Flash 528 Byte / 264 Word Page Family.......................... 4 Table 3. ST Part Numbering Scheme............................................... 5 Table 4. Toshiba Part Numbering Scheme........................................... 6 EQUIVALENT PARTS............................................................... 6 Table 5. Replacement Parts Table, Package Compatibility............................... 6 DC and AC PARAMETERS.......................................................... 7 Table 6. AC Characteristics for Operation............................................ 7 ABSOLUTE MAXIMUM RATINGS.....................................................7 Table 7. Absolute Maximum Ratings................................................ 7 POWER-UP....................................................................... 8 SOFTWARE COMPATIBILITY........................................................ 8 Commands.................................................................... 8 Bus Operations................................................................ 8 Status Register................................................................ 9 Table 8. Status Register Comparison............................................... 9 Manufacturer and Device Codes..................................................9 Table 9. ST and Toshiba Device and Manufacturer Codes............................... 9 CONCLUSION.................................................................... 10 REFERENCES................................................................... 10 Table 10. Datasheets used for Benchmarking......................................... 10 REVISION HISTORY............................................................... 10 Table 11. Document Revision History............................................... 10 2/11
Table 1. ST Nand Flash 528 Byte / 264 Word Page Family Part Number Density Bus Width 128Mbit Page Size Block Size Memory Array V DD Range (in V) Temperature Range AN1839 - APPLICATION NOTE Timings Page Program Typical (µs) Block Erase Typical (ms) Program /Erase Cycles Reliability Data Retention (in years) NAND128R3A 1.7 to 1.95 200 2 100,000 10 x8 512+16 16K+512 NAND128W3A 32 2.7 to 3.6 200 2 100,000 10 Pages x 1024 NAND128R4A 1.7 to 1.95 200 2 100,000 10 x16 256+8 8K+256 Words Words NAND128W4A 2.7 to 3.6 200 2 100,000 10 NAND256R3A 1.7 to 1.95 200 2 100,000 10 x8 512+16 16K+512 NAND256W3A 32 2.7 to 3.6 200 2 100,000 10 Pages x 2048 NAND256R4A 1.7 to 1.95 200 2 100,000 10 x16 256+8 8K+256 Words Words NAND256W4A 2.7 to 3.6 200 2 100,000 10 256Mbit Grade 1: 0 to 70 C Grade 6: -40 to 85 C Package Type NAND512R3A x8 512+16 16K+512 1.7 to 1.95 200 2 100,000 10 32 NAND512W3A Pages x 2.7 to 3.6 200 2 100,000 10 NAND512R4A 4096 x16 256+8 8K+256 1.7 to 1.95 200 2 100,000 10 Words Words NAND512W4A 2.7 to 3.6 200 2 100,000 10 512Mbit NAND512R3A 1.7 to 1.95 200 2 100,000 10 x8 512+16 16K+512 NAND512W3A 32 2.7 to 3.6 200 2 100,000 10 Pages x 4096 NAND512R4A 1.7 to 1.95 200 2 100,000 10 x16 256+8 8K+256 Words Words NAND512W4A 2.7 to 3.6 200 2 100,000 10 512Mbit NAND01GR3A x8 512+16 1.7 to 1.95 200 2 100,000 10 16K+512 NAND01GW3A 32 2.7 to 3.6 200 2 100,000 10 Pages x 8192 NAND01GR4A x16 256+8 1.7 to 1.95 200 2 100,000 10 8K+256 Words Words NAND01GW4A 2.7 to 3.6 200 2 100,000 10 1Gbit VFBGA63 VFBGA63 VFBGA63 VFBGA63 TFBGA63 TFBGA63 TFBGA63 TFBGA63 3/11
Table 2. Toshiba Nand Flash 528 Byte / 264 Word Page Family Part Number Density Bus Width Page Size Block Size Memory Array V CC Range (in V) Temperature Range Timing Page Program Typical Block Erase Typical Program/ Erase Cycles Reliability Package type TC58DVM72A 128 Mbit x8 512+16 16K+512 32 Pages x 1024 2.7 to 3.6 200 ~ 300 µs 2ms 100K TSOP(1)48 TC58DVM82A TC58DVM92A 512 Mbit 256 Mbit x8 512+16 x8 512+16 16K+512 16K+512 32 Pages x 2048 32 Pages x 4096 2.7 to 3.6 2.7 to 3.6 0 to 70 200 ~ 300 µs 200 ~ 300 µs 2ms 100K TSOP(1)48 2ms 100K TSOP(1)48 TC58DVG02A 1 Gbit x8 512+16 16K+512 32 Pages x 8192 2.7 to 3.6 200 ~ 300 µs 2ms 100K TSOP(1)48 4/11
Table 3. ST Part Numbering Scheme Example: NAND 512 R 3 A 0 A ZA 1 T Device Type NAND = NAND Flash Memory Density 128 = 128 Mbit 256 = 256 Mbit 512 = 512 Mbit 01G = 1 Gbit Operating Voltage R = V DD = 1.7 to 1.95V W = V DD = 2.7 to 3.6V Bus Width 3 = x8 4 = x16 Family Identifier A = 528 Byte / 264 Word Page family Device Options 0 = No Options 1 = Automatic Page 0 Read at Power-up 2 = Chip Enable Don t Care Enabled 3 = Chip Enable Don t Care Enabled and Automatic Page 0 Read at Power-up Product Version A = 120nm process technology (Single Die 128Mb, 256Mb, 512Mb) (Dual Die 512Mb, 1Gb) Package N = 12 x 20mm V = 12 x 17 x 0.65mm (128Mbit, 256Mbit and 512Mbit devices) ZA = 8 x 10 x 1mm, 6x8 ball array, 0.8mm pitch (128Mbit and 256Mbit devices) ZB = TFBGA55 8 x 10 1.2mm, 6x8 ball array, 0.8mm pitch (512Mbit Dual Die Devices) ZA = VFBGA63 8.5 x 15 x 1mm, 6x8 ball array, 0.8mm pitch (512Mbit devices) ZB = TFBGA63 8.5 x 15 x 1.2mm, 6x8 ball array, 0.8mm pitch (1Gbit Dual Die devices) Temperature Range 1 = 0 to 70 C 6 = 40 to 85 C Option Blank = Standard Packing T = Tape & Reel Packing E = Lead Free Package, Standard Packing F = Lead Free Package, Tape & Reel Packing 5/11
Table 4. Toshiba Part Numbering Scheme Example: TC58 D V M9 2 AQ Device Type TC58 = Toshiba CMOS Flash Memory Type of Flash Memory D = NAND (Small Block) Operating Voltage V = 3.3V Density M7 = 128 Mbit M8 = 256 Mbit M9 = 512 MBit G0 = 1 Gbit Cell Level 2 = 2 level 4 = 4 level Organization A = x8, page: 528B, Block: 16KB F = x16, page: 256W, Block: 16KB EQUIVALENT PARTS Table 5. shows that for each Toshiba part, an equivalent STMicroelectronics Small Page NAND Flash memory can be used as a replacement. Table 5. Replacement Parts Table, Package Compatibility Toshiba Part Number ST Package Bus Width Pin (ST) ST Toshiba Replacement Instruction TC58DVM72A NAND128 TSOP x8 6 NC GND No action required TC58DVM82A NAND256 TSOP x8 6 NC GND No action required TC58DVM92A NAND512 TSOP x8 6 NC GND No action required TC58DVG02A NAND01G TSOP x8 6 NC GND No action required 6/11
DC AND AC PARAMETERS The DC characteristics are fully compatible. AN1839 - APPLICATION NOTE For AC Characteristics, overall the two NAND Flash memory families are electrically compatible, however there are a few minor differences that must be taken into account when using STMicroelectronics Small Page NAND Flash memories instead of the equivalent Toshiba parts. These differences are highlighted in Table 6. Table 6. AC Characteristics for Operation ST Symbol Toshiba Parameter ST Toshiba Unit t BLBH1 t R Data Transfer from Cell to Register 12 25 µs t RLRH t RP Read Enable Pulse Width 30 35 ns t WHBL t WB Write Enable High to busy 100 200 ns t WHRL t WHR Write Enable High to Read Enable Low 80 30 ns t RHBL t RB Read Enable High to Ready/Busy Low 100 200 ns t EHBH t CRY Chip Enable High to Ready 60+t r 1000+t r ns Note: The shaded areas highlight the differences. ABSOLUTE MAXIMUM RATINGS The two NAND Flash memory families can endure the same electrical and thermal stress, and are compatible in terms of absolute maximum ratings. Table 7. shows the minor differences that need to be taken into account. Table 7. Absolute Maximum Ratings Symbol Rating ST Toshiba Unit V DD, V CC Power Supply Voltage 0.6 to 4.6 0.6 to 4.6 V V I/O Input/Output Voltage 0.6 to 4.6 0.6 to 4.6 V T BIAS Operating Temperature 50 to 125 0 to 70 C V I/O undershoot 2.0V for max 20ns NA I/O I/O overshoot +2.0V for max 20ns NA Note: The shaded areas highlight the differences. 7/11
POWER-UP The two NAND Flash memory families have the same supply voltage threshold (below this threshold all internal NAND Flash memory functions are disabled) but they do not have the same recovery time. Power-up Recovery time: ST 10µs Toshiba 100µs STMicroelectronics Small Page devices have an additional feature compared to Toshiba devices, the Automatic Page 0 Read at Power-Up option. For more details, please refer to the NAND128-A, NAND256- A, NAND512-A, NAND01G-A, 528 Byte/ 264 Word Page datasheet. SOFTWARE COMPATIBILITY This section shows the command set differences between STMicroelectronics Small Page and Toshiba NAND Flash memories and highlights the aspects that must be considered when replacing the software drivers. Commands Toshiba devices support the Multiplane command, which is not available in ST devices. The Multiplane operations listed below are not recognized by ST devices and should not be used: Multiplane Copyback Program: 03h; Multiplane Status Read: 71h; Multiplane Program Sequence: 80h - 11h: Multiplane Block Erase Sequence: 60h - 60h. All other commands are fully compatible. Bus Operations STMicroelectronics Small Page and Toshiba NAND Flash memories are fully compatible for all Bus Operations. In both families several bus cycles are required to input the addresses. The number of cycles required depends on the bus width and density of the device (see ST s NAND128-A, NAND256-A, NAND512-A, NAND01G-A, 528 Byte/ 264 Word Page datasheet for more details). 8/11
Status Register Both the ST and Toshiba devices contain a Status Register which provides information on the current or previous program or erase operation. For many operations, the Status Register needs to be read in order to check the progress and result of the operation. The Toshiba NAND Flash memory family provides two commands for reading the Status Register: command code 70h returns information about Generic Errors and about the busy and Write Protection statuses of the device. This command code corresponds to the Read Status Register command of the STMicroelectronics Small Page NAND Flash devices and returns the same information. The two commands are fully compatible. command code 71h gives information about Multiplane operations, so this command is not compatible with STMicroelectronics Small Page NAND Flash devices. For other operations, Status Register bits SR0, SR6 and SR7 are used. These bits have the same meaning in ST and Toshiba devices. Table 8. Status Register Comparison Status Register Bits ST (70h) Toshiba (70h) Toshiba (71h) 0 Generic Error Total Pass/Fail Total Pass/Fail 1 2 3 Reserved Reserved Multiplane operation 4 5 Reserved 6 Program/Erase/ReadController Device Operation Ready/Busy Device Operation Ready/Busy 7 Write Protection Write Protect Write Protect Manufacturer and Device Codes ST and Toshiba devices have different Manufacturer and Device Codes. They are summarized in Table 9. Table 9. ST and Toshiba Device and Manufacturer Codes Device Bus Width V DD, V CC Device Code Manufacturer Code ST Toshiba ST Toshiba 128 Mbit x8 3V 73h 20h 98h 256 Mbi x8 3V 75h 20h 98h 512 Mbit x8 3V 76h 20h 98h 1 Gbit x8 3V 79h 20h 98h 9/11
CONCLUSION STMicroelectronics Small Page (528 Byte/264 Word Page) NAND Flash memories are compatible with the equivalent Toshiba family of NAND Flash memories. By taking into account the few minor differences highlighted in this document, the ST devices can be used as replacements in applications initially designed for Toshiba devices. REFERENCES Table 10. shows the datasheets that were used for the benchmarking done in this document. There is also another benchmarking Application Note, AN1838 How to Use a Small Page ST NAND Flash Memory in an Application Designed for a Samsung Device. Table 10. Datasheets used for Benchmarking Title Description Version Date ST NAND128-A, NAND256-A, NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit ( x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 8.0 01-Oct-2004 TC58DVM72A 128-MBit (16M x 8 Bits) CMOS NAND E 2 PROM - 2003-03-19 Toshiba TC58DVM82A 256-MBit (32M x 8 Bits) CMOS NAND E 2 PROM - 2003-03-25 TC58DVM92A 512-MBit (64M x 8 Bits) CMOS NAND E 2 PROM - 2003-07-11 TC58DVG02A 1-GBit (128M x 8 Bits) CMOS NAND E 2 PROM - 2003-11-11 REVISION HISTORY Table 11. Document Revision History Date Version Revision Details 13-Apr-2004 1.0 First issue. 02-Nov-2004 2.0 This document applies to the Small Page, 528 Byte/264 Word Page NAND Flash family only. Table 1., ST Nand Flash 528 Byte / 264 Word Page Family updated. Product Version updated in Table 3., ST Part Numbering Scheme. Table 6., AC Characteristics for Operation updated. References to Cache Program command removed. Table 10., Datasheets used for Benchmarking updated. 10/11
If you have any questions or suggestions concerning the matters raised in this document, please refer to the MPG request support web page: http://www.st.com/askmemory Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners 2004 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 11/11