Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply. Type No. Mark Package Code HZS Series Type No. MHD B 7

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Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply Features REJ3G184-3Z (Previous: ADE-28-12B) Rev.3. Mar.11.24 Low leakage, low zener impedance and maximum power dissipation of 4 mw are ideally suited for stabilized power supply, etc. Wide spectrum from 1.6V through 38V of zener voltage provide flexible application. Suitable for 5mm-pitch high speed automatic insertion. Ordering Information Type No. Mark Package Code HZS Series Type No. MHD Pin Arrangement B 7 2 1 2 Type No. Cathode band 1. Cathode 2. Anode Rev.3., Mar.11.24, page 1 of 6

Absolute Maximum Ratings Item Symbol Value Unit Power dissipation Pd 4 mw Junction temperature Tj 2 C Storage temperature Tstg 55 to +175 C Electrical Characteristics Zener Voltage Reverse Current Dynamic Resistance V Z (V)* 1 Condition I R (µa) Condition r d (Ω) Condition Type Grade Min Max I Z (ma) Max V R (V) Max I Z (ma) HZS2 HZS3 HZS4 HZS5 Note: A1 1.6 1.8 A2 1.7 1.9 A3 1.8 2. B1 1.9 2.1 B2 2. 2.2 B3 2.1 2.3 C1 2.2 2.4 C2 2.3 2.5 C3 2.4 2.6 A1 2.5 2.7 A2 2.6 2.8 A3 2.7 2.9 B1 2.8 3. B2 2.9 3.1 B3 3. 3.2 C1 3.1 3.3 C2 3.2 3.4 C3 3.3 3.5 A1 3.4 3.6 A2 3.5 3.7 A3 3.6 3.8 B1 3.7 3.9 B2 3.8 4. B3 3.9 4.1 C1 4. 4.2 C2 4.1 4.3 C3 4.2 4.4 A1 4.3 4.5 A2 4.4 4.6 A3 4.5 4.7 B1 4.6 4.8 B2 4.7 4.9 B3 4.8 5. 1. ed with DC. 5 25.5 1 5 5 5.5 1 5 5 5.5 1 5 5 5 1. 1 5 5 5 1.5 1 5 Rev.3., Mar.11.24, page 2 of 6

Zener Voltage Reverse Current Dynamic Resistance V Z (V)* 1 Condition I R (µa) Condition r d (Ω) Condition Type Grade Min Max I Z (ma) Max V R (V) Max I Z (ma) HZS5 HZS6 HZS7 HZS9 HZS11 HZS12 Note: C1 4.9 5.1 C2 5. 5.2 C3 5.1 5.3 A1 5.2 5.5 A2 5.3 5.6 A3 5.4 5.7 B1 5.5 5.8 B2 5.6 5.9 B3 5.7 6. C1 5.8 6.1 C2 6. 6.3 C3 6.1 6.4 A1 6.3 6.6 A2 6.4 6.7 A3 6.6 6.9 B1 6.7 7. B2 6.9 7.2 B3 7. 7.3 C1 7.2 7.6 C2 7.3 7.7 C3 7.5 7.9 A1 7.7 8.1 A2 7.9 8.3 A3 8.1 8.5 B1 8.3 8.7 B2 8.5 8.9 B3 8.7 9.1 C1 8.9 9.3 C2 9.1 9.5 C3 9.3 9.7 A1 9.5 9.9 A2 9.7 1.1 A3 9.9 1.3 B1 1.2 1.6 B2 1.4 1.8 B3 1.7 11.1 C1 1.9 11.3 C2 11.1 11.6 C3 11.4 11.9 A1 11.6 12.1 A2 11.9 12.4 A3 12.2 12.7 B1 12.4 12.9 B2 12.6 13.1 B3 12.9 13.4 1. ed with DC. 5 5 1.5 1 5 5 5 2. 4 5 5 1 3.5 15 5 5 1 5. 2 5 5 1 7.5 25 5 5 1 9.5 35 5 Rev.3., Mar.11.24, page 3 of 6

Zener Voltage Reverse Current Dynamic Resistance V Z (V)* 1 Condition I R (µa) Condition r d (Ω) Condition Type Grade Min Max I Z (ma) Max V R (V) Max I Z (ma) HZS12 HZS15 HZS16 HZS18 HZS2 HZS22 HZS24 HZS27 HZS3 HZS33 HZS36 C1 13.2 13.7 C2 13.5 14. C3 13.8 14.3 1 14.1 14.7 2 14.5 15.1 3 14.9 15.5 1 15.3 15.9 2 15.7 16.5 3 16.3 17.1 1 16.9 17.7 2 17.5 18.3 3 18.1 19. 1 18.8 19.7 2 19.5 2.4 3 2.2 21.1 1 2.9 21.9 2 21.6 22.6 3 22.3 23.3 1 22.9 24. 2 23.6 24.7 3 24.3 25.5 1 25.2 26.6 2 26.2 27.6 3 27.2 28.6 1 28.2 29.6 2 29.2 3.6 3 3.2 31.6 1 31.2 32.6 2 32.2 33.6 3 33.2 34.6 1 34.2 35.7 2 35.3 36.8 3 36.4 38. Notes: 1. ed with DC. 2. Type No. is as follows; HZS2B1, HZS2B2, HZS36-3. 5 1 9.5 35 5 5 1 11. 4 5 5 1 12. 45 5 5 1 13. 55 5 2 1 15. 6 2 2 1 17. 65 2 2 1 19. 7 2 2 1 21. 8 2 2 1 23. 1 2 2 1 25. 12 2 2 1 27. 14 2 Rev.3., Mar.11.24, page 4 of 6

Main Characteristic 1 2 1 3 HZS2B2 HZS4B2 HZS6B2 HZS9B2 HZS12B2 HZS16-2 HZS2-2 HZS24-2 HZS3-2 HZS36-2 Zener Current I Z (A) 1 4 1 5 1 6 1 7 1 8 5 1 15 2 25 3 35 4 Zener Voltage V Z (V) Fig.1 Zener current vs. Zener voltage Zener Voltage Temperature Coefficient γ Z (%/ C).1.8.6.4 %/ C 5 4 3 2 mv/ C.2.2.4.6.8.1 5 1 15 2 25 3 35 1 1 2 3 4 5 4 Zener Voltage V Z (V) Fig.2 Temperature Coefficient vs. Zener voltage Zener Voltage Temperature Coefficient γ Z (mv/ C) Power Dissipation Pd (mw) 5 4 3 2 1 l = 1 mm (Publication value) 5 1 l 2.5 mm 3 mm Printed circuit board 1 18 1.6t mm Material: paper phenol l = 5 mm 15 Ambient Temperature Ta ( C) 2 Fig.3 Power Dissipation vs. Ambient Temperature Rev.3., Mar.11.24, page 5 of 6

Package Dimensions As of January, 23 Unit: mm 26. Min 2.4 Max 26. Min φ.4 2. φ Package Code JEDEC JEITA Mass (reference value) MHD Conforms.84 g Rev.3., Mar.11.24, page 6 of 6

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