Migrating from MX30LF2G(4G)28AB to MX30LF2G(4G)18AC

Similar documents
Migrating from MX60LF8G28AB to MX60LF8G18AC

Migrating from MX30LF1G08AA to MX30LF1G18AC

Migrating from MX30LF1G08AA to MX30LF1GE8AB

2. General Features The two devices have a different page size and block size. Feature differences are highlighted in Bold Italic type in Table 2-1.

Comparing Spansion S34ML04G100 with Macronix MX30LF4G18AC

Comparing Toshiba TC58NVG0S3Exxxx with Macronix MX30LF1G08AA

Comparing Toshiba TC58NVG1S3E with Macronix MX30LF2G18AC

Both flash device families have similar features and functions as shown in Table 2-1.

Comparing Toshiba TC58BVG1S3HTAI0 with Macronix MX30LF2GE8AB

Comparing Spansion S29AL008J with Macronix MX29LV800C

Migrating from MX29GL256E to MX29GL256F

Comparing Spansion S29AL016J with Macronix MX29LV160D

Improving NAND Throughput with Two-Plane and Cache Operations

Comparison of MX25V1035F with MX25L1006E/1021E and MX25V1006E

Comparison of MX25V4035F with MX25L4006E and MX25V4006E

Macronix High Density Serial Flash Addressing

Macronix MX25Lxxx45G Serial Flash DTR Introduction

Comparison of MX25V8035F with MX25L8006E/08E and MX25V8006E

Serial Flash Secured OTP Area Introduction

Read-While-Write, Multiplexed, Burst Mode, Flash Memory

Comparison of MX25L3233F/73F/36F and MX25L32xxD/xxE

Industrial Temperature, 3 Volt, MCP Products - Parallel NOR Flash + Pseudo Static RAM (psram)

Replacing Spansion S29GL_S with Macronix MX29GL_F

SLC NAND FLASH and LPDDR2 162-Ball MCP (Multi-Chip Package)

Comparison of MX25L6433F/73F/36F and MX25L64xxE

Comparing Micron N25Q128A with Macronix MX25L12835F

Comparison of MX25L6435E and MX25L6445E

How to handle the spare-byte area of Macronix 36nm NAND Flash

Macronix Serial Flash Multi-I/O Introduction

Migrating from MX25U25635F to MX25U25645G

Comparison of MX25U4033E and MX25U4035

Using Erase Suspend and Erase Resume Functions in NOR Flash

Migrating from MX25L25635F to MX25L25645G/MX25L25673G

MX60LF8G18AC. 3V, 8G-bit NAND Flash Memory MX60LF8G18AC. P/N: PM2192 REV. 1.1, January 24,

MX30LF1208AA 512M-bit NAND Flash Memory

Comparing Micron N25Q032A / N25Q064A with Macronix MX25U3235F / MX25U6435F

The Comparison of MX25L12835E/36E/45E and MX25L12835F/33F

1G-BIT 3.3V NAND FLASH MEMORY

W29N08GV W29N08GV 8G-BIT 3.3V NAND FLASH MEMORY 2 CHIP STACKED 8G-BIT. Release Date: May 17 th, Revision C

W29N02KVxxAF 2G-BIT 3.3V NAND FLASH MEMORY. Release Date: November 7 th, Revision A

MX30LF2G18AC MX30LF4G18AC. 3V, 2G/4G-bit NAND Flash Memory. MX30LFxG18AC P/N: PM2129 REV. 1.1, NOV. 18,

W29N02GW/Z W29N02GW/Z 2G-BIT 1.8V NAND FLASH MEMORY. Release Date: December 4 th, Revision E

W29N08GV W29N08GV NAND FLASH MEMORY. 2 chip stack 8G-Bit. Release Date: August 26 th Revision A

MX30LF2G28AB MX30LF4G28AB. 3V, 2G/4G-bit NAND Flash Memory. MX30LFxG28AB. P/N: PM2029 REV. 1.3, February 08,

Spansion SLC NAND Flash Memory for Embedded

W29N04GV W29N04GV 4G-BIT 3.3V NAND FLASH MEMORY. Release Date: February 9 th, Revision B

Spansion SLC NAND Flash Memory for Embedded

MX35LF1GE4AB MX35LF2GE4AB. 3V, 1Gb/2G-bit Serial NAND Flash Memory. MX35LFxGE4AB. P/N: PM2128 REV. 1.5, June 07,

ONFI Standards and What They Mean to Designers

NAND32GW3F4A. 32-Gbit (4 x 8 Gbits), two Chip Enable, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories.

1 Gb, 2 Gb, 4 Gb, 3 V, 4-bit ECC, SLC NAND Flash Memory for Embedded

1 Gbit, 2 Gbit, 4 Gbit SLC NAND Flash for Embedded

W29N08GV W29N08GV NAND FLASH MEMORY. 2 chip stack 8G-Bit. Release Date: August 26 th Revision A

NAND Flash Module DESCRIPTION: FEATURES: 69F96G24, 69F192G24

Comparing Micron N25Q128A with Macronix MX25U12835F

NAND Flash Module DESCRIPTION: FEATURES: 69F12G24, 69F24G24

1Gbit NAND FLASH FMND1GXXX3D. 3V/1.8V, x8/x16 1G-BIT NAND FLASH. Rev.09 (Sep ) 1

Comparing Spansion S26KS512S with Macronix MX25UM51245G

W29N01HZ/W W29N01HZ/W 1G-BIT 1.8V NAND FLASH MEMORY. Release Date: January, 11 th, Revision E

W29N01HZ/W W29N01HZ/W 1G-BIT 1.8V NAND FLASH MEMORY. Release Date: September, 20 th, Revision D

EN27LN1G08 EN27LN1G08. 1 Gigabit (128 Mx 8), 3.3 V NAND Flash Memory. Features

NAND Design-In Notice

EN27LN2G08 EN27LN2G08. 2 Gigabit (256M x 8), 3.3 V NAND Flash Memory. Features

W29N01HV W29N01HV 1G-BIT 3.3V NAND FLASH MEMORY. Release Date: Oct 15, Revision A

APPLICATION NOTE Migrating to MX25L3206E from MX25L3205D

KFG1G16Q2B. 1Gb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

AN1839 APPLICATION NOTE How to Use a Small Page ST NAND Flash Memory in an Application Designed for a Toshiba Device

APPLICATION NOTE Migrating to MX25L1606E / MX25L8006E from MX25L1605D / MX25L8005

2Gb NAND FLASH H27U2G8_6F2C H27S2G8_6F2C

ESMT. F59L1G81A Flash 1 Gbit (128M x 8) 3.3V NAND Flash Memory FEATURES ORDERING INFORMATION GENERAL DESCRIPTION

Conversion Guide (256-Mbit): Numonyx Embedded Flash Memory (J3 v. D, 130 nm) to Numonyx StrataFlash Embedded Memory (J3-65 nm)

Cervoz Industrial Embedded Module

1Gb SLC NAND Flash Specification

Pre-enabling designs with ONFI (Open NAND Flash Interface) Shahed Ameer Applications Engineer Flash Memory Group, Intel

F20 64Gb MLC NAND Flash Memory Legacy TSOP

NAND Flash Module DESCRIPTION: FEATURES: 29F32G08. DDC s 32 Gb high density NAND flash features a x8 wide bus.

ADVANCED DATASHEET. IS34MC01GA08/16 3.3V 1Gb SLC NAND Flash Memory Specification and Technical Notes. Page 1

AN2685 Application note

Technical Note. Migrating from Micron M29W Devices to MT28EW NOR Flash Devices. Introduction. TN-13-50: Migrating M29W to MT28EW NOR Flash Devices

Cervoz Industrial SSD

Product Specification

Virtium eusb Flash Module. Product Specification VUS 200 Series

Cervoz Industrial SSD

NAND Flash Module DESCRIPTION: FEATURES: 69F64G16, 69F128G16, 69F256G16. DDC s 64, 128, and 256 Gb high density NAND flash features a x8 wide bus.

Datasheet. Embedded Storage Solutions. Industrial. SATA III 2.5 Solid State Drive. SED2FIV Series CSXXXXXRC-XX09XXXX. 04 Jul 2016 V1.

Technical Note. Migrating from S29GL-S Devices to MT28FW NOR Flash Devices. Introduction. TN-13-41: Migrating S29GL-S to MT28FW NOR Flash Devices

Cervoz Industrial Memory Card

Cervoz Industrial Embedded Module

KFM1G16Q2A KFN2G16Q2A 1Gb MuxOneNAND A-die

Migration Guide for Numonyx StrataFlash Wireless Memory (L18/L30) to Numonyx StrataFlash Embedded Memory (P30)

Cervoz Industrial Memory Card

F59L1G81MA (2Y) Flash 1 Gbit (128M x 8) 3.3V NAND Flash Memory

ESMT (Preliminary) F50L2G41XA (2B)

Cervoz Industrial Embedded Module

Pm39F010 / Pm39F020 / Pm39F040

AN Migration Guide

3V 2G-BIT (2 x 1G-BIT) SERIAL SLC NAND FLASH MEMORY WITH

F59D2G81A / F59D2G161A Flash 2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory

Migrating from Spansion Am29F to Micron M29F NOR Flash Memories

MX25L5121E MX25L1021E MX25L5121E, MX25L1021E DATASHEET

Transcription:

Migrating from MX30LF2G(4G)28AB to MX30LF2G(4G)18AC 1. Introduction This application note is a migration guide for migrating Macronix MX30LF2G(4G)28AB to MX30LF2G(4G)18AC 2Gb(4Gb) SLC NAND Flash. The document does not provide detailed information on the individual devices, but highlights the major similarities and differences between them. The comparison covers the general features, performance, command codes and other differences. The information in this document is based on datasheets listed in Section 8. Newer versions of the datasheets may override the contents of this document. 2. General Features Both flash device families have similar features and functions as shown in Table 2-1. Feature differences are highlighted in Bold Italic type in the table. Table 2-1. Key Features Comparison Voltage 2.7V-3.6V 2.7V-3.6V Bus Width x8 x8 Operating Temperature -40 C to 85 C -40 C to 85 C Interface ONFI 1.0 Compliant ONFI 1.0 Compliant Page Size (2K+112)B (2K+64)B Block Size (128K+7K)B (128K+4K)B ECC Requirement 8bit/540B 4bit/528B OTP 30 Pages 30 Pages Unique ID ONFI Standard ONFI Standard Block Protection N/A Yes Guaranteed Good Blocks at shipping Block#0 Block#0 Data Retention 10 Years 10 Years Endurance 100K Cycles 100K Cycles Package 48TSOP (12x20mm) 63-VFBGA (9x11mm) 48TSOP (12x20mm) 63-VFBGA (9x11mm) P/N: AN0306 1

3. Electrical Performance Both flash device families have similar performance as shown in Table 3-1. Performance differences are highlighted in Bold Italic type in the table. Table 3-1. Key Performance Comparison Performance Min. Typ. Max. Min. Typ. Max. Access Time Program Time Random (tr) - - 25us - - 25us Cache Read Busy time - 2us 25us - 3.5us 25us Sequential 20ns - - 20ns - - Page Program - 300us 600us - 300us 600us Cache Program Busy time - 3us 600us - 5us 600us Erase Time Block - 1ms 3.5ms - 1ms 3.5ms Standby (TTL) - - 1mA - - 1mA Standby (CMOS) - 10uA 50uA - 10uA 50uA Active Read - 20mA 30mA - 20mA 30mA Current Consumption Partial-Page Programs Active Program - 20mA 30mA - 20mA 30mA Active Erase - 15mA 30mA - 15mA 30mA Power-up Current (Including POR - - 30mA - - 50mA Current) Input Leakage - - +/- 10uA - - +/- 10uA Output Leakage - - +/- 10uA - - +/- 10uA NOP - - 4 cycles - - 4 cycles P/N: AN0306 2

4. Command Set Command sets are the same with the addition of the Block Protection Status Read command which is highlighted in Bold Italic type in Table 4-1. Table 4-1. Command Set Command Description 1st cmd Cycle 2nd cmd Cycle 1st cmd Cycle 2nd cmd Cycle Read 00h 30h 00h 30h Random Data Input 85h - 85h - Random Read Data Output 05h E0h 05h E0h Cache Read Random 00h 31h 00h 31h Cache Read Sequential 31h - 31h - Cache Read End 3Fh - 3Fh - Read ID 90h - 90h - Parameter Page Read (ONFI) ECh - ECh - Read Unique ID (ONFI) EDh - EDh - Get Features (ONFI) EEh - EEh - Set Features (ONFI) EFh - EFh - Reset FFh - FFh - Page Program 80h 10h 80h 10h Cache Program 80h 15h 80h 15h Block Erase 60h D0h 60h D0h Status Read 70h - 70h - Status Enhanced Read (ONFI) 78h - 78h - Block Protection Status Read - - 7Ah - Two-plane Program (ONFI) 80h-11h-80h-10h 80h-11h-80h-10h Two-plane Cache Program (ONFI) 80h-11h-80h-15h 80h-11h-80h-15h Two-plane Block Erase (ONFI) 60h-D1h-60h-D0h 60h-D1h-60h-D0h OTP Area Access Set Feature followed by normal read/program command Set Feature followed by normal read/program command P/N: AN0306 3

5. Status Register Comparison Status Register bit functions are the same (Table 5-1). Please refer to the Macronix datasheet for additional details. Table 5-1. Status Register Comparison SR[0] Program/Erase Pass or Fail Program/Erase Pass or Fail SR[1] Cache Program Pass or Fail Cache Program Pass or Fail SR[2] Not Used Not Used SR[3] Not Used Not Used SR[4] Not Used Not Used SR[5] Ready/Busy for Internal Controller Ready/Busy for Internal Controller Program/Erase/Read Operation Program/Erase/Read Operation SR[6] Ready/Busy Ready/Busy SR[7] Write Protect Write Protect 6. Package Pin Definition The MX30LF2G(4G)28AB can be replaced by the MX30LF2G(4G)18AC without pin conflicts. Because the only difference is the PT (Protection) pin #38 of the MX30LF2G(4G)18AC. 48-TSOP (or ball G5 of the 63-VFBGA) (which has an internal weak pull-down) the user does not need to do anything if the protection feature is not used. Package physical dimensions are the same. For detailed information, please refer to the individual datasheets. Table 6-1. Package Pin Definition 48-TSOP pin 38 63-VFBGA ball G5 DNU PT (Protection) P/N: AN0306 4

7. Device Identification The ID codes of the MX30LF2G(4G)28AB and MX30LF2G(4G)18AC are identical except for the last byte which is used to indicate the ECC requirement. Please note that although the two devices share the same code of 1 for the Spare Area Size (4th Byte, Bit 2), the MX30LFxG28AB s Spare Area Size is 28 Bytes per 512 bytes, whereas the MX30LFxG18AC s Spare Area size is 16 bytes per 512 bytes. Firmware that uses a non-onfi detection method may need to be modified to recognize the smaller spare area of the MX30LFxG18AC device. Table 7-1. Device Identification Part Name MX30LFxG28AB MX30LFxG18AC ID Code 2Gb C2h/DAh/90h/95h/07h C2h/DAh/90h/95h/06h 4Gb C2h/DCh/90h/95h/57h C2h/DCh/90h/95h/56h 1st Byte Manufacturer ID Manufacturer ID 2nd Byte Device ID Device ID Number of Die per CE Number of Die per CE Cell Structure Cell Structure 3rd Byte Number of Concurrently Programmed Pages Number of Concurrently Programmed Pages Interleaved Programming between multiple devices Interleaved Programming between multiple devices Cache program Cache program Page Size Page Size ID Definition Spare Area Size (28-byte per 512- byte), bit2=1 Spare Area Size (16-byte per 512- byte), bit2=1 4th Byte Sequential Read Cycle Time (bit7, bit3=1,0) Sequential Read Cycle Time (bit7, bit3= 1,0) Block Size (Excluding spare area) Block Size (Excluding spare area) Organization Organization ECC level requirement, 8-bit ECC required (bit1:0=11b) ECC level requirement, 4-bit ECC required (bit1:0=10b) 5th Byte Plane number Plane number Plane Size (Excluding spare area) Plane Size (Excluding spare area) Reserved Reserved 8. Reference Table 8-1 shows the datasheet versions used for comparison in this application note. For the most current, detailed specification, please contact Macronix Sales and distributors. Table 8-1. Datasheet Versions Datasheet Location Date Issued Revision MX30LFxG28AB Website Jun. 2014 Rev. 1.1 MX30LFxG18AC Website Oct. 2014 Rev. 1.0 P/N: AN0306 5

9. Summary The Macronix MX30LFxG28AB and MX30LFxG18AC NAND flash share the same basic Read, Program, and Erase commands and have compatible pin-outs. The newly defined PT function on pin-38 of the MX30LFxG18AC can be left floating if the function is not needed or used. Migrating to the MX30LFxG18AC may require firmware modifications to accommodate differences in spare area sizes and ECC requirements 10. Part Number Cross-Reference Table 10-1. Part Number Cross Reference Bus Width Voltage Density Package Part Number Part Number 48-TSOP MX30LF2G28AB-TI MX30LF2G18AC-TI 2G 63-VFBGA MX30LF2G28AB-XKI MX30LF2G18AC-XKI x8 3V 48-TSOP MX30LF4G28AB-TI MX30LF4G18AC-TI 4G 63-VFBGA MX30LF4G28AB-XKI MX30LF4G18AC-XKI 11. Revision History Table 11-1. Revision History Revision No. Description Page Date REV. 1 Initial Release of Advanced Information Version ALL Jun. 20, 2014 REV. 2 Correct the issuing date 6 Jul. 17, 2014 1. Revised some timing spec to align with production datasheet 2 2. Defined ID byte#4 of MX30LFxG18AC to align 5 REV. 3 with production datasheet Nov. 25, 2014 3. Revised the datasheet version of MX30LFxG18AC as Rev 1.0. Also removed 5 title of "Advanced Information" P/N: AN0306 6

Except for customized products which have been expressly identified in the applicable agreement, Macronix's products are designed, developed, and/or manufactured for ordinary business, industrial, personal, and/or household applica- tions only, and not for use in any applications which may, directly or indirectly, cause death, personal injury, or severe property damages. In the event Macronix products are used in contradicted to their target usage above, the buyer shall take any and all actions to ensure said Macronix's product qualified for its actual use in accordance with the applicable laws and regulations; and Macronix as well as it s suppliers and/or distributors shall be released from any and all liabil- ity arisen therefrom. Copyright Macronix International Co., Ltd. 2014. All rights reserved, including the trademarks and tradename thereof, such as Macronix, MXIC, MXIC Logo, MX Logo, Integrated Solutions Provider, NBit, Nbit, NBiit, Macronix NBit, elite- Flash, HybridNVM, HybridFlash, XtraROM, Phines, KH Logo, BE-SONOS, KSMC, Kingtech, MXSMIO, Macronix vee, Macronix MAP, Rich Audio, Rich Book, Rich TV, and FitCAM. The names and brands of third party referred thereto (if any) are for identification purposes only. For the contact and order information, please visit Macronix s Web site at: http://www.macronix.com MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice. P/N: AN0306 7