NAND Flash Memory / NAND

SEMICONDUCTOR GENERAL CATALOG 東芝半導体製品総覧表 2017 年 1 月版 Memory メモリ NAND Flash Memory /NAND 型フラッシュメモリ SCA0004I

NAND Flash Memory / NAND SLC Small Block / SLC 512 Mbits (max) (μs) ZTC58DVM92A5TA00 512 + 16 16K + 512 40 25 0.3 2.5 2.7 to 3.6 0 to 70 TSOP I 48-P-1220-0.50 ZTC58DVM92A5TAI0 512 + 16 16K + 512 40 25 0.3 2.5 2.7 to 3.6 40 to 85 TSOP I 48-P-1220-0.50 ZTC58DVM92A5BAJ3 512 + 16 16K + 512 40 25 0.3 2.5 2.7 to 3.6 40 to 85 P-TFBGA63-0813-0.80AZ SLC Large Block / SLC 1 Gbits 2 Gbits 4 Gbits 8 Gbits 16 Gbits 32 Gbits (max) (μs) ZTC58NVG0S3HTA00 2048 +128 128K + 8K 25 25 0.3 2.5 2.7 to 3.6 0 to 70 TSOP I 48-P-1220-0.50 ZTC58NVG0S3HTAI0 2048 +128 128K + 8K 25 25 0.3 2.5 2.7 to 3.6 40 to 85 TSOP I 48-P-1220-0.50 ZTC58NVG0S3HBAI6 2048 +128 128K + 8K 25 25 0.3 2.5 2.7 to 3.6 40 to 85 P-VFBGA67-0608-0.80-001 Z TC58NVG0S3HBAI4 2048 +128 128K + 8K 25 25 0.3 2.5 2.7 to 3.6 40 to 85 P-TFBGA63-0911-0.80CZ ZTC58NVG1S3HTA00 2048 +128 128K + 8K 25 25 0.3 2.5 2.7 to 3.6 0 to 70 TSOP I 48-P-1220-0.50 ZTC58NVG1S3HTAI0 2048 +128 128K + 8K 25 25 0.3 2.5 2.7 to 3.6 40 to 85 TSOP I 48-P-1220-0.50 ZTC58NVG1S3HBAI6 2048 +128 128K + 8K 25 25 0.3 2.5 2.7 to 3.6 40 to 85 P-VFBGA67-0608-0.80-001 ZTC58NVG1S3HBAI4 2048 +128 128K + 8K 25 25 0.3 2.5 2.7 to 3.6 40 to 85 P-TFBGA63-0911-0.80CZ Z TC58NVG2S0HTA00 4096 + 256 256K + 16K 25 25 0.3 2.5 2.7 to 3.6 0 to 70 TSOP I 48-P-1220-0.50 ZTC58NVG2S0HTAI0 4096 + 256 256K + 16K 25 25 0.3 2.5 2.7 to 3.6 40 to 85 TSOP I 48-P-1220-0.50 ZTC58NVG2S0HBAI6 4096 + 256 256K + 16K 25 25 0.3 2.5 2.7 to 3.6 40 to 85 P-VFBGA67-0608-0.80-001 ZTC58NVG2S0HBAI4 4096 + 256 256K + 16K 25 25 0.3 2.5 2.7 to 3.6 40 to 85 P-TFBGA63-0911-0.80CZ ZTH58NVG3S0HTA00 4096 + 256 256K + 16K 25 25 0.3 2.5 2.7 to 3.6 0 to 70 TSOP I 48-P-1220-0.50 ZTH58NVG3S0HTAI0 4096 + 256 256K + 16K 25 25 0.3 2.5 2.7 to 3.6 40 to 85 TSOP I 48-P-1220-0.50 ZTH58NVG3S0HBAI6 4096 + 256 256K + 16K 25 25 0.3 2.5 2.7 to 3.6 40 to 85 P-VFBGA67-0608-0.80-001 ZTH58NVG3S0HBAI4 4096 + 256 256K + 16K 25 25 0.3 2.5 2.7 to 3.6 40 to 85 P-TFBGA63-0911-0.80CZ ZTH58NVG4S0FTA20 4096 + 232 256K + 14.5K 25 30 0.3 3 2.7 to 3.6 0 to 70 TSOP I 48-P-1220-0.50C ZTH58NVG4S0FTAK0 4096 + 232 256K + 14.5K 25 30 0.3 3 2.7 to 3.6 40 to 85 TSOP I 48-P-1220-0.50C ZTH58NVG4S0FBAID 4096 + 232 256K + 14.5K 25 30 0.3 3 2.7 to 3.6 40 to 85 P-TFBGA63-1011-0.80-001 ZTH58NVG4S0HTA20 4096 + 256 256K + 16K 25 25 0.3 2.5 2.7 to 3.6 0 to 70 TSOP I 48-P-1220-0.50C ZTH58NVG4S0HTAK0 4096 + 256 256K + 16K 25 25 0.3 2.5 2.7 to 3.6 40 to 85 TSOP I 48-P-1220-0.50C ZTH58NVG5S0FTA20 4096 + 232 256K + 14.5K 25 30 0.3 3 2.7 to 3.6 0 to 70 TSOP I 48-P-1220-0.50C ZTH58NVG5S0FTAK0 4096 + 232 256K + 14.5K 25 30 0.3 3 2.7 to 3.6 40 to 85 TSOP I 48-P-1220-0.50C The above flash memories in BGA packages are also available in 1.8-V versions. For details, contact your local sales representative. BGA 1.8 V 2

SLC Large / SLC (Legacy Interface) 32 Gbits 64 Gbits (max) (μs) Z TC58NVG5H2HTA00 8192 + 1024 1M + 128K 20 45 0.4 4.5 2.7 to 3.6 0 to 70 TSOP I 48-P-1220-0.50C Z TC58NVG5H2HTAI0 8192 + 1024 1M + 128K 20 45 0.4 4.5 2.7 to 3.6 40 to 85 TSOP I 48-P-1220-0.50C Z TH58NVG6H2HTA20 8192 + 1024 1M + 128K 20 45 0.4 4.5 2.7 to 3.6 0 to 70 TSOP I 48-P-1220-0.50C Z TH58NVG6H2HTAK0 8192 + 1024 1M + 128K 20 45 0.4 4.5 2.7 to 3.6 40 to 85 TSOP I 48-P-1220-0.50C Z TH58NVG7H2HTA20 8192 + 1024 1M + 128K 20 45 0.4 4.5 2.7 to 3.6 0 to 70 TSOP I 48-P-1220-0.50C 128 Gbits Z TH58NVG7H2HTAK0 8192 + 1024 1M + 128K 20 45 0.4 4.5 2.7 to 3.6 40 to 85 TSOP I 48-P-1220-0.50C (Toggle Interface) 64 Gbits Access Time Program/Erase Time (typ.) (max) (μs) Supply Z TH58TEG6H2HBA4C 8192 + 1024 1M + 128K 5 to 10 45 0.4 4.5 2.7 to 3.6 Z TH58TEG6H2HBAMC 8192 + 1024 1M + 128K 5 to 10 45 0.4 4.5 2.7 to 3.6 Z TH58TEG7H2HBA8C 8192 + 1024 1M + 128K 5 to 10 45 0.4 4.5 2.7 to 3.6 128 Gbits Z TH58TEG7H2HBASC 8192 + 1024 1M + 128K 5 to 10 45 0.4 4.5 2.7 to 3.6 Z TH58TEG8H2HBA89 8192 + 1024 1M + 128K 5 to 10 45 0.4 4.5 2.7 to 3.6 256 Gbits Z TH58TEG8H2HBAS9 8192 + 1024 1M + 128K 5 to 10 45 0.4 4.5 2.7 to 3.6 I/O Port Power Supply 0 to 70 P-TFBGA132-1218-1.00-001 40 to 85 P-TFBGA132-1218-1.00-001 0 to 70 P-TFBGA132-1218-1.00-001 40 to 85 P-TFBGA132-1218-1.00-001 0 to 70 P-FBGA132-1218-1.00BZ 40 to 85 P-FBGA132-1218-1.00BZ 3

BENAND TM BENAND (Built-in ECC NAND) is a family of flash memories with ECC functionality that provides a standard raw NAND flash interface. As is the case with traditional NAND flash memories, wear leveling and bad-block management are the responsibility of a host controller. However, BENAND removes the burden of ECC from the host controller, simplifying the use of advanced SLC NAND flash memories. BENAND Built-in ECC NAND ECC NAND NAND ECC SLC NAND (typ.) (μs) ZTC58BVG0S3HTA00 2048 + 64 128K + 4K 25 40 0.33 2.5 2.7 to 3.6 0 to 70 TSOP I 48-P-1220-0.50 1 Gbits ZTC58BVG0S3HTAI0 2048 + 64 128K + 4K 25 40 0.33 2.5 2.7 to 3.6 40 to 85 TSOP I 48-P-1220-0.50 ZTC58BVG0S3HBAI6 2048 + 64 128K + 4K 25 40 0.33 2.5 2.7 to 3.6 40 to 85 P-VFBGA67-0608-0.80-001 Z TC58BVG0S3HBAI4 2048 + 64 128K + 4K 25 40 0.33 2.5 2.7 to 3.6 40 to 85 P-TFBGA63-0911-0.80CZ ZTC58BVG1S3HTA00 2048 + 64 128K + 4K 25 40 0.33 2.5 2.7 to 3.6 0 to 70 TSOP I 48-P-1220-0.50 2 Gbits ZTC58BVG1S3HTAI0 2048 + 64 128K + 4K 25 40 0.33 2.5 2.7 to 3.6 40 to 85 TSOP I 48-P-1220-0.50 ZTC58BVG1S3HBAI6 2048 + 64 128K + 4K 25 40 0.33 2.5 2.7 to 3.6 40 to 85 P-VFBGA67-0608-0.80-001 ZTC58BVG1S3HBAI4 2048 + 64 128K + 4K 25 40 0.33 2.5 2.7 to 3.6 40 to 85 P-TFBGA63-0911-0.80CZ ZTC58BVG2S0HTA00 4096 + 128 256K + 8K 25 55 0.34 2.5 2.7 to 3.6 0 to 70 TSOP I 48-P-1220-0.50 4 Gbits ZTC58BVG2S0HTAI0 4096 + 128 256K + 8K 25 55 0.34 2.5 2.7 to 3.6 40 to 85 TSOP I 48-P-1220-0.50 ZTC58BVG2S0HBAI6 4096 + 128 256K + 8K 25 55 0.34 2.5 2.7 to 3.6 40 to 85 P-VFBGA67-0608-0.80-001 ZTC58BVG2S0HBAI4 4096 + 128 256K + 8K 25 55 0.34 2.5 2.7 to 3.6 40 to 85 P-TFBGA63-0911-0.80CZ ZTH58BVG3S0HTA00 4096 + 128 256K + 8K 25 55 0.34 2.5 2.7 to 3.6 0 to 70 TSOP I 48-P-1220-0.50 8 Gbits ZTH58BVG3S0HTAI0 4096 + 128 256K + 8K 25 55 0.34 2.5 2.7 to 3.6 40 to 85 TSOP I 48-P-1220-0.50 ZTH58BVG3S0HBAI6 4096 + 128 256K + 8K 25 55 0.34 2.5 2.7 to 3.6 40 to 85 P-VFBGA67-0608-0.80-001 ZTH58BVG3S0HBAI4 4096 + 128 256K + 8K 25 55 0.34 2.5 2.7 to 3.6 40 to 85 P-TFBGA63-0911-0.80CZ BENAND TM is a trademark of TOSHIBA CORPORATION. The above flash memories in BGA packages are also available in 1.8-V versions. For details, contact your local sales representative. BENAND BGA 1.8 V Serial Interface NAND Serial Interface NAND flash memories are compatible with Serial Peripheral Interface (SPI) that is commonly used as a general interface. Serial Interface NAND SLC NAND SPI Access Time Supply (min)(ns) TC58CVG0S3 HQAIE * 9.6 2048 + 64 128K + 4K 2.7 to 3.6 40 to 85 P-SOP16-1111-1.27-001 1 Gbits TC58CVG0S3 HRAIG * 9.6 2048 + 64 128K + 4K 2.7 to 3.6 40 to 85 P-WSON8-0608-1.27-003 TC58CYG0S3 HQAIE * 9.6 2048 + 64 128K + 4K 40 to 85 P-SOP16-1111-1.27-001 TC58CYG0S3 HRAIG * 9.6 2048 + 64 128K + 4K 40 to 85 P-WSON8-0608-1.27-003 TC58CVG1S3 HQAIE * 9.6 2048 + 64 128K + 4K 2.7 to 3.6 40 to 85 P-SOP16-1111-1.27-001 2 Gbits TC58CVG1S3 HRAIG * 9.6 2048 + 64 128K + 4K 2.7 to 3.6 40 to 85 P-WSON8-0608-1.27-003 TC58CYG1S3 HQAIE * 9.6 2048 + 64 128K + 4K 40 to 85 P-SOP16-1111-1.27-001 TC58CYG1S3 HRAIG * 9.6 2048 + 64 128K + 4K 40 to 85 P-WSON8-0608-1.27-003 TC58CVG2S0 HQAIE * 9.6 4096 + 128 256K + 8K 2.7 to 3.6 40 to 85 P-SOP16-1111-1.27-001 4 Gbits TC58CVG2S0 HRAIG * 9.6 4096 + 128 256K + 8K 2.7 to 3.6 40 to 85 P-WSON8-0608-1.27-003 TC58CYG2S0 HQAIE * 9.6 4096 + 128 256K + 8K 40 to 85 P-SOP16-1111-1.27-001 TC58CYG2S0 HRAIG * 9.6 4096 + 128 256K + 8K 40 to 85 P-WSON8-0608-1.27-003 *: New product / 4

e MMC TM e MMC TM is a family of NAND flash memories with control functionality such as ECC, wear leveling and bad-block management. e MMC TM also provides a high-speed memory card interface compliant with JEDEC/MMCA Version 5.0/5.1, eliminating the need for users to be concerned about directly controlling NAND flash memories. Thus, e MMC TM can easily be used as a storage device for embedded applications. NAND JEDEC/MMCA Ver. 5.0/5.1 NAND Class 4 GBytes 8 GBytes 16 GBytes 32 GBytes 64 GBytes e MMC Version Max Data Rate (MB/s) Supply VCC VCCQ Size (mm) Code THGBMDG5D1LBAIT Premium 5.0 400 2.7 to 3.6, 2.7 to 3.6 25 to 85 11 x 10 x 0.8 P-WFBGA153-1110-0.50 THGBMDG5D1LBAIL Premium 5.0 400 2.7 to 3.6, 2.7 to 3.6 25 to 85 11.5 x 13 x 0.8 P-WFBGA153-1113-0.50 THGBMHG6C1LBAIL Premium 5.1 (1) 400 2.7 to 3.6, 2.7 to 3.6 25 to 85 11.5 x 13 x 0.8 P-WFBGA153-1113-0.50 THGBMHG6C1LBAU6 Industrial 5.1 (1) 400 2.7 to 3.6, 2.7 to 3.6 40 to 105 (2) 11.5 x 13 x 0.8 P-WFBGA153-1113-0.50 THGBMHG7C2LBAIL Supreme 5.1 (1) 400 2.7 to 3.6, 2.7 to 3.6 25 to 85 11.5 x 13 x 0.8 P-WFBGA153-1113-0.50 THGBMHG7C1LBAIL Premium 5.1 (1) 400 2.7 to 3.6, 2.7 to 3.6 25 to 85 11.5 x 13 x 0.8 P-WFBGA153-1113-0.50 THGBMHG7C2LBAU7 Industrial 5.1 (1) 400 2.7 to 3.6, 2.7 to 3.6 40 to 105 (2) 11.5 x 13 x 1.0 P-VFBGA153-1113-0.50 THGBMHG8C4LBAIR Supreme 5.1 (1) 400 2.7 to 3.6, 2.7 to 3.6 25 to 85 11.5 x 13 x 1.0 P-VFBGA153-1113-0.50 THGBMHG8C2LBAIL Premium 5.1 (1) 400 2.7 to 3.6, 2.7 to 3.6 25 to 85 11.5 x 13 x 0.8 P-WFBGA153-1113-0.50 THGBMHG8C4LBAU7 Industrial 5.1 (1) 400 2.7 to 3.6, 2.7 to 3.6 40 to 105 (2) 11.5 x 13 x 1.0 P-VFBGA153-1113-0.50 THGBMHG9C4LBAIR Supreme 5.1 (1) 400 2.7 to 3.6, 2.7 to 3.6 25 to 85 11.5 x 13 x 1.0 P-VFBGA153-1113-0.50 THGBMGG9U4 LBAIR Premium 5.1 400 2.7 to 3.6, 2.7 to 3.6 25 to 85 11.5 x 13 x 1.0 P-VFBGA153-1113-0.50 THGBMHG9C8LBAU8 Industrial 5.1 (1) 400 2.7 to 3.6, 2.7 to 3.6 40 to 105 (2) 11.5 x 13 x 1.2 P-TFBGA153-1113-0.50 128 GBytes THGBMHT0C8LBAIG Supreme 5.1 (1) 400 2.7 to 3.6, 2.7 to 3.6 25 to 85 11.5 x 13 x 1.2 P-TFBGA153-1113-0.50 THGBMGT0U8 LBAIG Premium 5.1 400 2.7 to 3.6, 2.7 to 3.6 25 to 85 11.5 x 13 x 1.2 P-TFBGA153-1113-0.50 Note (1): Compliant with the optional command queuing feature and the secure write protection feature of JEDEC e MMC Ver 5.1 / e JEDEC e MMC TM Version 5.1 (2): Tc = 115 C max. MMC TM is a trademark of JEDEC/MMCA. Contact the Toshiba sales representative for sample schedule about products under development. Details about your intended usage would be checked before submitting samples of the industrial class product. e MMC JEDEC/MMCA Industrial UFS Toshiba s Flash memories with an integrated controller provide error correction, wear leveling, bad-block management, etc. They have an interface compliant with JEDEC/UFS Version 2.1, eliminating the need for users to perform NAND-specific control. This simplifies integration of Flash memory storage into embedded applications. NAND JEDEC/UFS Ver. 2.1 NAND UFS Max Data Rate Supply Version (MB/s) VCC VCCQ VCCQ2 Size (mm) Code 32 GBytes THGAF4G8N2LBAIR 2.1 1166 2.7 to 3.6 (1) 25 to 85 11.5 x 13 x 1.0 P-VFBGA153-1113-0.50 64 GBytes THGAF4G9N4LBAIR 2.1 1166 2.7 to 3.6 (1) 25 to 85 11.5 x 13 x 1.0 P-VFBGA153-1113-0.50 128 GBytes THGAF4T0N8LBAIR 2.1 1166 2.7 to 3.6 (1) 25 to 85 11.5 x 13 x 1.0 P-VFBGA153-1113-0.50 Note (1): This product supports dual-supply operation at VCC and VCCQ2. VCCQ need not be supplied. / VCC VCCQ2 2 VCCQ Contact the Toshiba sales representative for sample schedule about products under development. 5

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