SK, SK1 Silicon N-Channel MOS FET ADE--13 (Z) 1st. Edition Mar. 1 Application Low frequency power amplifier Complementary pair with SJ31, SJ3 Features High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Outline TO-3P D G 1 3 S 1. Gate. Source (Flange) 3. Drain
SK, SK1 Absolute Maximum Ratings (Ta = C) Item Symbol Ratings Unit Drain to source voltage SK V DSX 1 V SK1 Gate to source voltage V GSS ± V Drain current I D A Body to drain diode reverse drain current I DR A Channel dissipation Pch* 1 1 W Channel temperature Tch 1 C Storage temperature Tstg to +1 C Note 1. Value at Tc = C Electrical Characteristics (Ta = C) Item Symbol Min Typ Max Unit Test conditions Drain to source SK V (BR)DSX 1 V I D = 1 ma, V GS = 1 V breakdown voltage SK1 Gate to source breakdown voltage V (BR)GSS ± V I G = ±1 µa, V DS = Gate to source cutoff voltage V GS(off).1 1. V I D = 1 ma V DS = 1 V Drain to source saturation voltage V DS(sat) 1 V I D = A, V GD = V* 1 Forward transfer admittance y fs.7 1. 1. S I D = 3 A V DS = 1 V* 1 Input capacitance Ciss pf V GS = V Output capacitance Coss pf V DS = 1 V Reverse transfer capacitance Crss pf f = 1 MHz Turn-on time t on ns V DD = 3 V Turn-off time t off 9 ns I D = A Note 1. Pulse Test
SK, SK1 Channel Dissipation Pch (W) 1 1 Power vs. Temperature Derating 1 1 Case Temperature Tc ( C) 1 1.. Maximum Safe Operation Area PW = 1 ms (1 Shot) DC Operation (T C = C) Ta = C PW = 1 ms (1 Shot) SK SK1. 1 1 Drain to Source Voltage V DS (V) 1 V GS = 1 V Typical Output Characteristics 9 T C = C 7 Pch = 1 W 3 1 1 Typical Output Characteristics T C = C 9 V GS = 1 V 7 3 1 1 3 Drain to Source Voltage V DS (V) 1 Drain to Source Voltage V DS (V) 3
SK, SK1 1 Typical Transfer Characteristics 1. Typical Transfer Characteristics V DS = 1 V T C = C 7.... V DS = 1 V T C = C 7 1 Gate to Source Voltage V GS (V).. 1. 1.. Gate to Source Voltage V GS (V) Forward Transfer Admittance yfs (S) 1..1.1 Forward Transfer Admittance vs. Frequency T C = C V DS = 1 V I D = A.1. k 1 k 1 k 1 M 1 M M Frequency f (Hz) Switching Time t on, t off (ns) 1 1.1 Switching Time vs. Drain Current t on t off.. 1. 1
SK, SK1 Switching Time Test Circuit Waveforms Output 9% RL Input Input 1% t on t off PW = µs duty ratio = 1% Ω 3 V Output 1% 9%
SK, SK1 Package Dimensions 1. ±.3 φ3. ±. 1.. ±.3. ±. 1. As of January, 1 Unit: mm 1. ±. 19.9 ±.. 1. 1. Max.. 1.9 ±..3. 1. ±.. ±. 3..9 1.. ±.. ±. Hitachi Code JEDEC EIAJ Mass (reference value) TO-3P Conforms. g
SK, SK1 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi s or any third party s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party s rights, including intellectual property rights, in connection with use of the information contained in this document.. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support.. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.. This product is not designed to be radiation resistant.. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., --, Ohte-machi, Chiyoda-ku, Tokyo 1-, Japan Tel: Tokyo (3) 37-111 Fax: (3) 37-19 URL NorthAmerica : http://semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia : http://sicapac.hitachi-asia.com Japan : http://www.hitachi.co.jp/sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 913 Tel: <1> () 33-199 Fax: <1>() 33-3 Hitachi Europe GmbH Electronic Components Group Dornacher Straβe 3 D- Feldkirchen, Munich Germany Tel: <9> (9) 9 91- Fax: <9> (9) 9 9 3 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL YA, United Kingdom Tel: <> (1) Fax: <> (1) 1 Hitachi Asia Ltd. Hitachi Tower 1 Collyer Quay #-, Singapore 931 Tel : <>-3-33/3-77 Fax : <>-3-933/3-377 URL : http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) /F, No. 17, Tun Hwa North Road, Hung-Kuo Building, Taipei (1), Taiwan Tel : <>-()-71-3 Fax : <>-()-71-1 Telex : 3 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <>-()-73-91 Fax : <>-()-73-1 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd.,. All rights reserved. Printed in Japan. Colophon. 7
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