3cells Li ion/polymer battery protection IC MM3783 Series Description The MM3783 series are protection IC using high voltage CMOS process for overcharge, overdischarge, overcurrent, and temperature protection of the rechargeable Lithium ion or Lithium polymer battery. The overcharge, overdischarge, discharging overcurrent, charging overcurrent, short and 3 thresholds temperature protection by external NTC thermistor of the rechargeable 3cells Lithium ion or Lithium polymer battery can detected. The internal circuit of IC is composed by the voltage detector, the reference voltage source, delay time control circuit and the logical circuit, etc. Low cost and small size configuration can be achieved when MM3783 series is combined with our existing product MM3474 series and used for the applications of 6 cells or more. Features 1) Range and accuracy of detection/release voltage/temperature (Unless otherwise specified, Topr=+25 C) Item Range Accuracy Overcharge detection voltage 3.6V to 4.5V, 5mV step ±25mV (Topr=±0 to +50 C) Overcharge release voltage *1 3.4V to 4.5V, 50mV step ±50mV Overdischarge detection voltage 2.0V to 3.0V, 50mV step ±80mV Overdischarge release voltage *2 2.0V to 3.5V, 50mV step ±100mV Discharging overcurrentdetection voltage1 30mV to 300mV, 5mV step ±15% (Min.±10mV) Discharging overcurrent detection voltage2 2 or 4 times of VDET3 1 ±20% Short detection voltage 4 or 8 times of VDET3 1 ±30% Charging overcurrent detection voltage 300mV to 20mV, 5mV step ±15% (Min.±10mV) detection temperature *3 25 C to 75 C, 5 C step ±3 C 2) Range and accuracy of delay time Item Range Accuracy Overcharge detection delay time Setting by capacitor of COV ±50% Overcharge release delay time 1/10 to 10times of tvdet1 ±50% Overdischarge detection delay time Setting by capacitor of CUV ±50% Overdischarge release delay time 1/10 to 10times of tvdet2 ±50% Discharging overcurrent detection delay time1 Setting by capacitor of CDOC ±50% Discharging overcurrent detection delay time2 1/10 to 10times of tvdet3 1 ±50% Short detection delay time Typ.200us fixed Min.100us/max.400us Discharging overcurrent release delay time 1/10 to 10times of tvdet3 1 ±50% Charging overcurrent detection delay time Setting by capacitor of CCOC ±50% Charging overcurrent release delay time 1/10 to 10times of tvdet4 ±50% detection delay time Setting by capacitor of CTH ±50% release delay time 1/10 to 10times of tvdet5 ±50% *1 Overcharge release function is selectable from 3 options(voltage decrease, charger remove, load connect). *2 Overdischarge release function is selectable from 3 options(voltage increase, charger remove, load connect). *3 detection temperature accuracy is guaranteed by design. Detection accuracy may change with the specification of the used NTC thermistor. 30 Nov 16 1
Features 3) function thresholds can be setting 3 value (two thresholds of high temperature, one threshold of low temperature) by using a NTC thermistor. Example of temperature protection setting High temp protection Charge control Detect: +50 C±3 C, Release: +40 C±3 C Discharge control Detect: +70 C±3 C, Release: +60 C±3 C Lot temp protection Charge/Discharge control Detect: 10 C±3 C, Release: 0 C±3 C *4 Detection and release temperature change according to the spec (R, B constant) of NTC. 4) 0V battery charge function Selection from "Permission" or " Inhibition" 5) Low current consumption Consumption current1 (VDD), Vcell=4.4V Typ. 22.0uA Max. 34.0uA Consumption current2 (VDD), Vcell=3.5V Typ. 20.0uA Max. 26.0uA Consumption current3 (VDD), Vcell=1.8V Typ. 1.5uA, Max. 3.0uA 6) Input current V2 pin input current, Vcell=3.5V Max. ±0.3uA V1 pin input current, Vcell=3.5V Max. ±0.3uA 7) Absolute maximum ratings VDD pin VSS 0.3V to VSS+21V Voltage between the input terminal 0.3V to +10V OV, V pin VDD 30V to VDD+0.3V DCHG, CS, VSS_CS pin VSS 0.3V to VDD+0.3V REG, TH pin VSS 0.3V to VDD+0.3V COV, CUV pin VSS 0.3V to VDD+0.3V CDOC, CCOC, CTH pin VSS 0.3V to VDD+0.3V Storage temperature 55 to +125 C 8) Recommended operating conditions Operating temperature 30 to +80 C Supply voltage VSS+3.5V to +18.0V 30 Nov 16 2
Electrical characteristics V DET1 V DET3 1 V DET3 2 Unless otherwise specified, Topr=+25 C, RNTC=RTH=100kΩ Parameter Symbol Conditions Min. Typ. Max. unit Current consumption Current consumption1 (VDD) I DD1 V CELL =4.3V 22.0 34.0 ua Current consumption2 (VDD) I DD2 V CELL =3.5V 20.0 26.0 ua Current consumption3 (VDD) I DD3 V CELL =2.0V 1.5 3.0 ua V2/V1 pin input current I V2 I V1 V CELL =3.5V 0.3 0.3 Detection / Release voltage Overcharge detection voltage Ta=±0 C to +50 C Typ 0.025 V DET1 Typ+0.025 Overcharge release voltage V REL1 Typ 0.050 V REL1 Typ+0.050 V Overdischarge detection voltage V DET2 Typ 0.080 V DET2 Typ+0.080 V Overdischarge release voltage V REL2 Typ 0.100 V REL2 Typ+0.100 V pin threshold voltage for overdischarge release *5 Discharging overcurrent detection voltage 1 *6 Discharging overcurrent detection voltage 2 Short detection voltage V pin short detection voltage V pin threshold voltage for discharging overcurrent release Charging overcurrent detection voltage *6 V pin threshold voltage for detecting Vf of charge FET V pin threshold voltage for detecting Vf of discharge FET detection temperature1 *7 release temperature1 *7 detection temperature2 *7 release temperature2 *7 detection temperature3 *7 release temperature3 *7 V VM4 Typ 10% V VM4 Typ+10% V Typ 15% Typ 20% V DET3 1 V DET3 2 Typ+15% Typ+20% V SHORT Typ 30% V SHORT Typ+30% V V REL3 VDD 0.2 VDD 0.3 VDD 0.4 V V VM1 V DET4 V VM3 T THR2 T THD3 T THR4 Typ 1% Typ 15% V VM1 V DET4 Typ+1% Typ+15% V VM2 Typ 0.050 V VM2 Typ+0.050 V T THD1 Typ 3 C T THD1 T THR1 Typ 0.050 V VM3 Typ+0.050 Typ 3 C ua Typ 3 C T THR3 Typ+3 C C V V V V V T THR1 Typ+3 C C T THD2 Typ 3 C T THD2 Typ+3 C C Typ 3 C T THR2 Typ+3 C C Typ 3 C T THD3 Typ+3 C V V Typ+3 C C C *5 The release condition from the overdischarge is "load remove". *6 The minimum value of detection accuracy is ±10mV. *7 This parameter is guaranteed by design. 30 Nov 16 3
Electrical characteristics Unless otherwise specified, Topr=+25 C, RNTC=RTH=100kΩ Parameter Symbol Conditions Min. Typ. Max. unit Detection / Release voltage delay time Overcharge detection delay time t VDET1 Typ 50% t VDET1 Typ+50% sec Overcharge release delay time t VREL1 Typ 50% t VREL1 Typ+50% msec Overdischarge detection delay time t VDET2 Typ 50% t VDET2 Typ+50% sec Overdischarge release delay time t VREL2 Typ 50% t VREL2 Typ+50% msec Discharging overcurrent detection delay time 1 Discharging overcurrent detection delay time 2 t DET3 1 t DET3 2 Typ 50% Typ 50% t DET3 1 t DET3 2 Typ+50% Typ+50% msec msec Short detection delay time t SHORT 100.0 200 400 usec Discharging overcurrent release delay time t SHORT Typ 50% t VREL3 Typ+50% msec Charging overcurrent detection delay time t VDET4 Typ 50% t VDET4 Typ+50% msec Charging overcurrent release delay time detection delay time Maximum forbidden voltage for 0V charging *9 t VREL4 Typ 50% t VREL4 Typ+50% t VDET5 V CELL0V msec Typ 50% t VDET5 Typ+50% msec release delay time t VREL5 Typ 50% t VREL5 Typ+50% msec Load detection delay time t LDET 0.02 sec Output pin DCHG pin source current I DCHG_SO V DCHG =VDD 0.5V 20 ua DCHG pin sink current I DCHG_SI V CELL =2.0V,V DCHG =VSS+0.5V 20 ua OV pin source current I OV_SO V OV =VDD 0.5V 20 ua OV pin sink current I OV_SI V CELL =4.5V,V OV =VSS+0.5V 20 ua Regulator Regulator output voltage V REG I REG =20uA 1.975 2.000 2.025 V Regulator output voltage *7 V REG I REG =20uA,Ta= 30~+80 C 1.950 2.000 2.050 V Others V pin pulldown resistance 1 R VMPD1 V CELL =3.5V, V =2.0V 37.1 53.0 68.9 kω V pin pulldown resistance 2 *5 R VMPD2 V CELL =2.0V, V =3.0V 0.7 1.0 1.3 MΩ V pin pullup resistance R VMPU V CELL =3.5V, V =0V 350.0 500.0 650.0 kω Minimum operating voltage for 0V charging *8 Vst 0.6 0.9 1.2 1.2 V V *5 The release condition from the overdischarge is "load remove". *7 This parameter is guaranteed by design. *8 The minimum voltage between VDD and V for charge when 0V charge function is "Permission". *9 The charge prohibited voltage when 0V charge function is "inhibition". 30 Nov 16 4
Block diagram Pin configuration 30 Nov 16 5
Terminal explanations PIN No. PIN name PIN description 1 OV 2 V 3 DCHG 4 COV 5 CUV 6 CDOC 7 CCOC 8 CTH 9 CS Charge control output pin. Output type is CMOS. Normal mode:"high" Charge prohibited mode:"low Negative voltage of charger and load input pin. Detected charger connection and load connection. Discharge control output pin. Output type is CMOS. Normal mode:"high" Discharge prohibited mode:"low This pin is delay time setting of overcharge detection and overcharge release. If a capacitor is connected between COV pin and VSS pin, overcharge detection delay time setting becomes possible. This pin is delay time setting of overdischarge detection and overdischarge release. If a capacitor is connected between CUV pin and VSS pin, overdischarge detection delay time setting becomes possible. This pin is delay time setting of discharging overcurrent detection and discharging overcurrent release. If a capacitor is connected between CDOC pin and VSS pin, discharging overcurrent detection delay time setting becomes possible. This pin is delay time setting of charring overcurrent detection and charging overcurrent release. If a capacitor is connected between CCOC pin and VSS pin, charging overcurrent detection delay time setting becomes possible. This pin is delay time setting of temperature protection detection and temperature protection release. If a capacitor is connected between CTH pin and VSS pin, temperature protection detection delay time setting becomes possible. Input of overcurrent detection. Detected overcurrent by connecting CS VSS_CS pins both sides of sense resistance. Detection of an discharging overcurrent will output a low level from a DCHG pin. Detection of a charging overcurrent will output a low level from OV pin. It protects from high current by these control. 10 TH Temperature detection pin. 11 REG The regulator output pin for a thermo sense resistor drive. 12 VSS_CS Common pin of overcurrent detection circuit. 13 VSS The input pin of the negative voltage of V1 cell. The input pin of the ground of IC. 14 V1 The input pin of the positive voltage of V1 cell, and the negative voltage of V2 cell. 15 V2 The input pin of the positive voltage of V2 cell, and the negative voltage of V3 cell. 16 VDD The input pin of the power supply of IC, and the positive voltage of V3 cell. 30 Nov 16 6
Typical application 1) 3 cells protection circuit (Current pathway : Separate) 2) 3 cells protection circuit (Current pathway : Common) These circuits are typical examples provided for reference purposes, so in actual applications, the circuit constants, conditions and operations should be thoroughly studied. Mitsumi Electric Co., Ltd. Assumes no responsibility for any trouble or damage as a result of the use of these circuits. 30 Nov 16 7
Typical application 3) Explanation of external parts :3 cells protection circuit Parts name Roles of parts R1, E2, R3 C1, C2, C3 CR low pass filter to stabilize a supply ripple of VDD pin, V2 pin and V1 pin. RCS1, RCS2, RV CCS C4 C5 COV CUV CDOC CCOC CTH RSENSE ROV1, ROV2, RDC1, RDC2 RNTC RTH CTH ZD1 ZD2, ZD3, ZD4, ZD5 QOV1, QOV2 QDG1, QDG2 SBD Resistor to protect terminal. Capacitor to stabilize a supply ripple of CS pin. Capacitor to stabilize a supply ripple of drain of QDG1 and QDG2. Capacitor to stabilize a supply ripple of source of QOV1. Capacitor to sets overcharge detection/release delay time. Capacitor to sets overdischarge detection/release delay time. Capacitor to sets discharging overcurrent detection/release delay time. Capacitor to sets charging overcurrent detection/release delay time. Capacitor to sets temperature protection detection/release delay time. Sense resistance to observe charging/discharging current. Resistor for preventing the gate destruction due to parasitic oscillation. NTC thermistor to observe to temperature. The REG voltage is divided by NTC and RTH, and it's input to TH pin. Capacitor to stabilize a supply ripple of TH pin. Zener diode to prevent destruction of IC by surge voltage and motor back electromotive voltage. Zener diode to prevent destruction the gate and source of charge/discharge Nch MOS FET to control charging current. Nch MOS FET to control discharging current. When V pin becomes more than it in VDD pin voltage, it is schottky barrier diode to bypass the current so that an current does not flow through the IC inside. 30 Nov 16 8
Typical application 4) Instructions and directions for use When the current pathway of the charge and the discharge is separated, wiring is separated from the drain of charge and discharge control FET. When the current pathway of the charge and the discharge is separated, do not connect load and charger at the same time. It may incorrect release from the discharging overcurrent detection state and the short detection state. When the current pathway of the charge and the discharge is separated, please be sure to connect capacitor(c5) of more than 0.1uF to between the drain and the source of charge control FET. If temperature protection function is repealed, please make TH pin and VDD pin connection and make a REG pin open. Temperature detection property is adjusted using the thermo sensitive register of the following part number, and resistance accuracy. In order to satisfy the characteristic of specification, it recommends using the following parts. Symbol Name Function RTNC NTC Thermistor 100KΩ±1% B(25/50)=3950±1% Part name MF52D 104F 3950 Remarks Shenzhen DCH Electronic RTH Resistor 100KΩ±1% * Calculation fomula of NTC resisance and voltage of TH terminal Ra = R0 * exp ( B * ( 1 / Ta 1 / T0 ) ) Ra : NTC resistance when the surrounding temperature is Ta(K). R0 : NTC resistance when the surrounding temperature is T0(K). B : Thermistor constant Vdet = VREG * RTH / ( RTH + Rdet ) Vdet : detection threshold of MM3783 TH terminal. VREG : Output voltage of MM3783 REG terminal. Rdet : NTC resistance when the surrounding temperature is detection temperature. RTH : The resistance between the TH terminal and the VSS terminal 30 Nov 16 9
Typical application 5) 3 cells protection circuit (High side charge control) These circuits are typical examples provided for reference purposes, so in actual applications, the circuit constants, conditions and operations should be thoroughly studied. Mitsumi Electric Co., Ltd. Assumes no responsibility for any trouble or damage as a result of the use of these circuits. 30 Nov 16 10
Typical application 6) 13 cells protection circuit (Current pathway : Separate) These circuits are typical examples provided for reference purposes, so in actual applications, the circuit constants, conditions and operations should be thoroughly studied. Mitsumi Electric Co., Ltd. Assumes no responsibility for any trouble or damage as a result of the use of these circuits. 30 Nov 16 11
Product lineup Status of current IC (ES or MP) Product name (MM3783***VBH) Overcharge detection voltage Overcharge release voltage Overdischarge detection voltage Overdischarge release voltage Discharging overcurrent detection voltage 1 Discharging overcurrent detection voltage 2 V DET1 V REL1 V DET2 V REL2 V DET3 1 V DET3 2 V SHORT V DET4 V VM1 V VM2 V VM3 V VM4 V V V V V V V V V V V V MP A01 4.250 4.100 2.750 3.000 0.040 0.080 0.160 0.020 VDD 0.05 0.200 0.200 ES A02 4.200 4.050 2.750 3.000 0.040 0.080 0.160 0.020 VDD 0.05 0.200 0.200 PLAN A03 4.225 4.075 2.750 3.000 0.100 0.200 0.400 0.020 VDD 0.05 0.200 0.200 PLAN A04 4.200 4.100 2.500 3.000 0.040 0.080 0.160 0.020 VDD 0.05 0.200 0.200 PLAN A05 4.175 4.075 2.000 2.700 0.090 0.180 0.360 0.020 VDD 0.05 0.200 0.200 PLAN A06 4.350 4.150 2.300 3.000 0.090 0.180 0.360 0.020 VDD 0.05 0.200 0.200 PLAN A07 4.250 4.100 3.000 3.225 0.040 0.080 0.160 0.020 VDD 0.05 0.200 0.200 Short detection voltage PLAN A08 3.850 3.650 2.300 2.500 0.090090 0.180 0.360 PLAN D02 4.250 4.150 2.600 3.000 0.040 0.080 0.160 PLAN D04 4.225 4.075 2.500 3.000 0.040 0.080 0.160 detection voltage / release voltage Charging overcurrent detection voltage V pin threshold voltage for discharging overcurrent release V pin threshold voltage for detecting Vf of charge FET V pin threshold voltage for detecting Vf of discharge FET V pin threshold voltage for overdischarge release 0.030030 VDD 0.0505 0.200 0.200 PLAN A09 3.800 3.600 2.000 2.500 0.090 0.180 0.360 0.030 VDD 0.05 0.200 0.200 PLAN A10 3.750 3.550 2.200 2.700 0.090 0.180 0.360 0.030 VDD 0.05 0.200 0.200 ES C01 4.180 4.100 2.750 3.000 0.090 0.180 0.360 0.020 VDD 0.15 0.200 0.300 VDD 0.30 ES C02 4.200 4.100 2.750 3.000 0.090 0.180 0.360 0.020 VDD 0.15 0.200 0.300 VDD 0.30 MP C06 4.250 4.100 2.750 3.000 0.040 0.080 0.160 0.020 VDD 0.15 0.200 0.300 VDD 0.30 ES C07 4.250 4.150 2.500 3.000 0.090 0.180 0.360 0.020 VDD 0.15 0.200 0.300 VDD 0.30 PLAN C08 4.200 4.100 2.000 2.300 0.090 0.180 0.360 0.020 VDD 0.15 0.200 0.300 VDD 0.30 PLAN C09 4.250 4.000 2.800 3.300 0.040 0.080 0.160 0.020 VDD 0.15 0.200 0.300 VDD 0.30 PLAN C10 4.225 4.075 2.200 2.400 0.040 0.080 0.160 0.020 VDD 0.15 0.200 0.300 VDD 0.30 PLAN C11 3.750 3.550 2.200 2.700 0.090 0.180 0.360 0.030 VDD 0.15 0.200 0.300 VDD 0.30 PLAN C12 4.250 4.100 2.750 3.000 0.040 0.080 0.160 0.020 VDD 0.15 0.200 0.300 VDD 0.30 PLAN C13 4.250 4.100 2.750 3.000 0.040 0.080 0.160 0.020 VDD 0.15 0.200 0.300 VDD 0.30 PLAN D01 4.225 4.175 2.700 3.000 0.100 0.200 0.450 0.020 VDD 0.15 0.200 0.300 VDD 0.30 0.020 VDD 0.15 0.200 0.300 VDD 0.30 PLAN D03 4.200 4.050 2.750 3.000 0.090 0.180 0.360 0.020 VDD 0.15 0.200 0.300 VDD 0.30 0.020 VDD 0.15 0.200 0.300 VDD 0.30 Please inquire to us, if you request a rank other than the above. 30 Nov 16 12
Product lineup Status of current IC (ES or MP) Product name (MM3783***VBH) detection temperature 1 release temperature 1 detection/release temperature/voltage detection temperature 2 release temperature 2 detection temperature 3 release temperature 3 detection voltage 1 PLAN D04 10 0 55 50 75 60 0.151 release voltage 1 1 detection voltage 2 release voltage 2 detection voltage 3 V THD3 release voltage 3 T THD1 T THR1 T THD2 T THR2 T THD3 T THR3 V THD1 V THR1 V THD2 V THR2 V THR3 V REG C C C C C C VREG xxx V V MP A01 10 0 50 40 70 60 0.151 0.233 Chg/Dchg 0.736 0.653 0.852 0.802 2.000 ES A02 10 0 50 40 70 60 0.151 0.233 Chg/Dchg 0.736 0.653 0.852 0.802 2.000 PLAN A03 20 10 60 50 75 60 0.092 0.151 Chg/Dchg 0.802 0.736 0.872 0.802 2.000 PLAN A04 20 10 60 50 75 60 0.092 0.151 Chg/Dchg 0.802 0.736 0.872 0.802 2.000 PLAN A05 20 10 55 45 75 65 0.092 0.151 Chg/Dchg 0.771 0.697 0.872 0.828 2.000 PLAN A06 20 10 NA NA 70 60 0.092 0.151 Chg/Dchg NA NA 0.852 0.802 2.000 PLAN A07 NA NA 60 50 75 60 NA NA NA 0.802 0.736 0.872 0.802 2.000 PLAN A08 NA NA 60 50 75 60 NA NA NA 0.802 0.736 0.872 0.802 2.000 PLAN A09 NA NA 60 50 75 60 NA NA NA 0.802 0.736 0.872 0.802 2.000 PLAN A10 NA NA 60 50 75 60 NA NA NA 0.802 0.736 0.872 0.802 2.000 ES C01 0 5 55 45 65 55 0.233 0.281 Chg/Dchg 0.771 0.697 0.828 0.771 2.000 ES C02 10 0 55 45 75 65 0.151 0.233 Chg/Dchg 0.771 0.697 0.872 0.828 2.000 MP C06 NA NA 60 50 75 60 NA NA NA 0.802 0.736 0.872 0.802 2.000 ES C07 20 10 60 50 75 60 0.092 0.151 Chg/Dchg 0.802 0.736 0.872 0.802 2.000 PLAN C08 10 0 55 50 75 60 0.151 0.233 Chg/Dchg 0.771 0.736 0.872 0.802 2.000 PLAN C09 20 10 60 50 75 60 0.092 0.151 Chg/Dchg 0.802 0.736 0.872 0.802 2.000 PLAN C10 10 0 60 50 75 60 0.151 0.233 Chg/Dchg 0.802 0.736 0.872 0.802 2.000 PLAN C11 NA NA 60 50 75 60 NA NA NA 0.802 0.736 0.872 0.802 2.000 PLAN C12 NA NA 50 40 70 55 NA NA NA 0.736 0.653 0.852 0.771 2.000 PLAN C13 0 5 50 40 70 55 0.233 0.281 Chg 0.736 0.653 0.852 0.771 2.000 PLAN D01 0 5 50 45 70 65 0.233 0.281 Chg 0.736 0.697 0.852 0.828 2.000 PLAN D02 NA NA 60 50 75 60 NA NA Chg/Dchg 0.802 0.736 0.872 0.802 2.000 PLAN D03 20 10 60 50 75 60 0.092 0.151 Chg/Dchg 0.802 0.736 0.872 0.802 2.000 0.233 Chg/Dchg 0.771 Regulator output voltage 0.736 0.872 0.802 2.000 * 1 (Low temperature protection) Charge/Discharge control Chg / Dchg :When low temperature detected, charge and discharge are prohibited. Chg :When low temperature detected, charge is prohibited and discharge is permitted. Please inquire to us, if you request a rank other than the above. 30 Nov 16 13
Product lineup detection delay time / release delay time Status of current IC (ES or MP) Product name (MM3783***VBH) Overcharge detection delay time (at COV=0.1uF) Overcharge release delay time (at COV=0.1uF) Overdischarge detection delay time (at CUV=0.1uF) Overdischarge release delay time (at COV=0.1uF) Discharging overcurrent detection delay time 1 (at Discharging overcurrent detection delay time 2 (at Discharging overcurrent release delay time (at CDOC=0.01uF) Short detection delay time Charging overcurrent detection delay time (at CCOC=0.047uF) Charging overcurrent release delay time (at CCOC=0.047uF) detection delay time (at release delay time (at CTH=0.1uF) t VDET1 t VREL1 t VDET2 t VREL2 t VDET3 1 t VDET3 2 t VREL3 t SHORT t VDET4 t VREL4 t VDET5 t VREL5 sec msec sec msec msec msec msec usec msec msec sec sec MP A01 1.0 100 1.0 100 100 25.0 100 200 470 47.0 1.0 0.1 ES A02 1.0 100 1.0 100 100 25.0 100 200 470 47.0 1.0 0.1 PLAN A03 1.0 100 1.0 100 100 10.0 10 200 470 94.0 1.0 0.1 PLAN A04 1.0 100 1.0 100 100 10.0 10 200 470 94.0 1.0 0.1 PLAN A05 1.0 100 1.0 100 100 10.0 10 200 470 94.0 1.0 0.1 PLAN A06 1.0 100 1.0 100 100 10.0 10 200 470 94.0 1.0 0.1 PLAN A07 10 1.0 100 10 1.0 100 100 10.00 10 200 470 94.0 10 1.0 01 0.1 PLAN A08 1.0 100 1.0 100 100 10.0 10 200 470 94.0 1.0 0.1 PLAN A09 1.0 100 1.0 100 100 10.0 10 200 470 94.0 1.0 0.1 PLAN A10 1.0 100 1.0 100 100 10.0 10 200 470 94.0 1.0 0.1 ES C01 1.0 100 1.0 100 100 10.0 100 200 470 47.0 1.0 0.1 ES C02 1.0 100 1.0 100 100 10.0 100 200 470 47.0 1.0 0.1 MP C06 1.0 100 1.0 100 100 10.0 10 200 470 94.0 1.0 0.1 ES C07 1.0 100 1.0 100 100 10.0 10 200 470 94.0 1.0 0.1 PLAN C08 1.0 100 1.0 100 100 10.0 10 200 470 94.0 1.0 0.1 PLAN C09 1.0 100 1.0 100 100 10.0 10 200 470 94.0 1.0 0.1 PLAN C10 1.0 100 1.0 100 100 10.0 10 200 470 94.0 1.0 0.1 PLAN C11 1.0 100 1.0 100 100 10.0 10 200 470 94.0 1.0 0.1 PLAN C12 1.0 100 1.0 100 100 10.0 10 200 470 94.0 1.0 0.1 PLAN C13 1.0 100 1.0 100 100 10.0 10 200 470 94.0 1.0 0.1 PLAN D01 1.0 100 1.0 100 100 10.0 10 200 470 94.0 1.0 0.1 PLAN D02 1.0 100 1.0 100 100 10.0 10 200 470 94.0 1.0 0.1 PLAN D03 1.0 100 1.0 100 100 10.0 10 200 470 94.0 1.0 0.1 PLAN D04 1.0 100 1.0 100 100 10.0 10 200 470 94.0 1.0 0.1 Please inquire to us, if you request a rank other than the above. 30 Nov 16 14
Product lineup Status of current IC (ES or MP) MP A01 enable voltage ES A02 enable voltage enable voltage load remove charger remove temp Prohibition Not supported Supported PLAN Product name (MM3783***VBH) Overcharge hysteresis cancel function Overcharge release function PLAN A04 enable voltage Overdischarge hysteresis cancel function enable voltage Discharging overcurrent release function Option function Charging overcurrent release function load remove charger remove enable voltage load remove charger remove PLAN A06 enable voltage enable voltage load remove charger remove PLAN A08 enable voltage enable voltage load remove charger remove Overdischarge release function A03 enable voltage enable voltage load remove charger remove release function Prohibition temp Prohibition temp Prohibition temp Prohibition temp Prohibition Not supported Supported Not supported Supported PLAN A05 enable voltage enable voltage load remove charger remove temp Prohibition Not supported Supported Not supported Supported PLAN A07 enable voltage enable voltage load remove charger remove temp Prohibition Not supported Supported Not supported Supported PLAN A09 enable voltage enable voltage load remove charger remove temp Prohibition Not supported Supported PLAN A10 enable voltage enable voltage load remove charger remove temp 0V battery charge function Separated current pathway of the charge and the discharge Not supported High side charge control Supported ES C02 enable voltage enable load remove load remove charger remove temp Prohibition Supported Not supported C06 enable voltage enable load remove load remove charger remove temp Prohibition ES C07 enable voltage enable load remove load remove charger remove temp Prohibition Supported Not supported PLAN C08 enable voltage enable load remove load remove charger remove temp Prohibition PLAN C09 enable voltage enable load remove load remove charger remove temp Prohibition Supported Not supported PLAN C10 enable voltage enable load remove load remove charger remove PLAN D01 enable voltage enable load remove load remove charger remove PLAN D03 enable voltage enable load remove load remove charger remove temp Prohibition temp Prohibition temp Prohibition temp Prohibition Not supported Supported ES C01 enable voltage enable load remove load remove charger remove temp Prohibition Supported Not supported MP Supported Not supported Supported Not supported Supported Not supported PLAN C11 enable voltage enable load remove load remove charger remove temp Prohibition Supported Not supported PLAN C12 enable voltage enable load remove load remove charger remove temp Prohibition Supported Not supported PLAN C13 enable voltage enable load remove load remove charger remove temp Prohibition Supported Not supported Not supported Supported PLAN D02 enable voltage enable load remove load remove charger remove temp Prohibition Not supported Supported Not supported Supported PLAN D04 enable voltage enable load remove load remove charger remove temp Prohibition Not supported Supported Please inquire to us, if you request a rank other than the above. 30 Nov 16 15
Delay time characteristic 100 Overcharge detection delay time 10000 Overcharge release delay time Delay time [sec] 10 1 0.1 0.01 0.001 Delay time [msec] 1000 100 10 1 0.0001 0.0001 0.001 0.01 0.1 1 10 Capacity value of Ccov [uf] 0.1 0.0001 0.001 0.01 0.1 1 10 Capacity value of Ccov [uf] 100 Overdischarge detection delay time 10000 Overdischarge release delay time elay time [sec] D 10 1 0.1 001 0.01 0.001 Delay time [msec] 1000 100 10 1 0.0001 0.0001 0.001 0.01 0.1 1 10 Capacity value of Ccuv [uf] 0.1 0.0001 0.001 0.01 0.1 1 10 Capacity value of Ccuv [uf] 100000 Discharging overcurrent detection delay time1 100000 Discharging overcurrent detection delay time2 10000 10000 Delay time [msec] 1000 100 10 1 Delay time [msec] 1000 100 10 1 0.1 0.0001 0.001 0.01 0.1 1 10 Capacity value of Ccdoc [uf] 0.1 0.0001 0.001 0.01 0.1 1 10 Capacity value of Ccdoc [uf] The above chart is characteristic of MM3783A01VBH. The above chart isn't the guarantee characteristic, so treat as reference data. 30 Nov 16 16
Delay time characteristic 100000 Discharging overcurrent release delay time 100000 Charging overcurrent detection delay time Delay time [msec] 10000 1000 100 10 1 Delay time [msec] 10000 1000 100 10 1 0.1 0.0001 0.001 0.01 0.1 1 10 Capacity value of Ccdoc [uf] 0.1 0.0001 0.001 0.01 0.1 1 10 Capacity value of Cccoc [uf] 10000 Charging overcurrent release delay time 100 detection delay time Delay time [msec] 1000 100 10 1 De elay time [sec] 10 1 0.1 001 0.01 0.001 0.1 0.0001 0.001 0.01 0.1 1 10 Capacity value of Cccoc [uf] 0.0001 0.0001 0.001 0.01 0.1 1 10 Capacity value of Ccth [uf] 10000 release delay time Delay time [msec] 1000 100 10 1 0.1 0.0001 0.001 0.01 0.1 1 10 Capacity value of Ccth [uf] The above chart is characteristic of MM3783A01VBH. The above chart isn't the guarantee characteristic, so treat as reference data. 30 Nov 16 17
Temperature characteristic of main parameter 30 Current consumption1 (VDD) 25 Current consumption2 (VDD) 25 20 IDD1 [ua] 20 15 10 IDD2 [ua] 15 10 5 5 0 0 3 Current consumption3 (VDD) 4.28 Overcharge detection voltage V3 2.5 4.27 IDD3 [ua] 2 1.5 1 VDET13 [V] 4.26 4.25 4.24 0.5 4.23 0 4.22 4.28 Overcharge detection voltage V2 4.28 Overcharge detection voltage V1 4.27 4.27 VDET12 [V] 4.26 4.25 4.24 VDET11 [V] 4.26 4.25 4.24 4.23 4.23 4.22 4.22 2.78 Overdischarge detection voltage V3 2.78 Overdischarge detection voltage V2 2.77 2.77 VDET23 [V] 2.76 2.75 2.74 VDET22 [V] 2.76 2.75 2.74 2.73 2.73 2.72 The above chart is characteristic of MM3783A01VBH. 2.72 The above chart isn't the guarantee characteristic, so treat as reference data. 30 Nov 16 18
Temperature characteristic of main parameter 2.78 Overdischarge detection voltage V1 Discharging overcurrent detection voltage 1 0.050 VDET21 [V] 2.77 2.76 2.75 2.74 2.73 2.72 VDET3-1 [V] 0.045 0.040 0.035 0.030 0.10 Discharging overcurrent detection voltage 2 0.20 Short detection voltage 0.09 0.18 VDET3-2 [V] 0.08 0.07 VSHORT [V] 0.16 0.14 0.06 0.12-0.010 Charging overcurrent detection voltage 2.03 Regulator output voltage VDET4 [V] -0.015-0.020-0.025-0.030 VREG [V] 2.02 2.01 2.00 1.99 1.98 1.97 1.30 Overcharge detection delay time 1.30 Overdischarge detection delay time 1.20 1.20 tvdet1 [sec] 1.10 1.00 0.90 tvdet2 [sec] 1.10 1.00 0.90 0.80 0.80 0.70 0.70 The above chart is characteristic of MM3783A01VBH. The above chart isn't the guarantee characteristic, so treat as reference data. 30 Nov 16 19
Temperature characteristic of main parameter tvdet3-1 [msec] Discharging overcurrent detection delay time1 130 120 110 100 90 80 70 tvdet3-2 [msec] Discharging overcurrent detection delay time2 33 31 29 27 25 23 21 19 17 260 Short detection delay time 620 Charging overcurrent detection delay time 240 570 tshort [usec] 220 200 180 160 tvdet4 [msec] 520 470 420 370 140 320 1.30 detection delay time 1.20 tvdet5 [sec] 1.10 1.00 0.90 0.80 0.70 The above chart is characteristic of MM3783A01VBH. The above chart isn't the guarantee characteristic, so treat as reference data. 30 Nov 16 20
Timing chart 1) Overcharge detect/release operations The above is a timing chart in the case of the circuit of "Current pathway : Separate" using MM3783C01VBH. 30 Nov 16 21
Timing chart 2) Overdischarge detect/release operations The above is a timing chart in the case of the circuit of "Current pathway : Separate" using MM3783C01VBH. 30 Nov 16 22
Timing chart 3)Discharging overcurrent detect/release operations The above is a timing chart in the case of the circuit of "Current pathway : Separate" using MM3783C01VBH. 30 Nov 16 23
Timing chart 4) Charging overcurrent detect/release operations The above is a timing chart in the case of the circuit of "Current pathway : Separate" using MM3783C01VBH. 30 Nov 16 24
Timing chart 5) detect/release operations The above is a timing chart in the case of the circuit of "Current pathway : Separate" using MM3783C01VBH. 30 Nov 16 25
PACKAGE DIMENSIONS TSOP 16B Unit:mm MITSUMI ELECTRIC CO.,LTD. Strategy Engineering Department http://www.mitsumi.co.jp Semiconductor Business Division tel:+81 46 230 3470 Any products mentioned this leaflet are subject to any modification in their appearance and others for improvements without prior notification. The details listed here are not a guarantee of the individual products at the time of ordering. When using the products, you will be asked to check their specifications. 30 Nov 16 26