A DISRUPTIVE TECHNOLOGY FOR STORAGE CLASS MEMORY. Investor Open Briefing Feb 2018

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Transcription:

A DISRUPTIVE TECHNOLOGY FOR STORAGE CLASS MEMORY Investor Open Briefing Feb 2018 1

DISCLAIMER IMPORTANT NOTICE: This presentation has been prepared by 4DS Memory Limited. ( 4DS or the Company ) based on information available to it as at the date of this presentation. The information in this presentation is provided in summary form and does not contain all information necessary to make an investment decision. This presentation does not constitute an offer, invitation, solicitation or recommendation with respect to the purchase or sale of any security in 4DS, nor does it constitute financial product advice or take into account any individual s investment objectives, taxation situation, financial situation or needs. An investor must not act on the basis of any matter contained in this presentation but must make its own assessment of 4DS and conduct its own investigations. Before making an investment decision, investors should consider the appropriateness of the information having regard to their own objectives, financial situation and needs, and seek legal, taxation and financial advice appropriate to their jurisdiction and circumstances. 4DS is not licensed to provide financial product advice in respect of its securities or any other financial products. Cooling off rights do not apply to the acquisition of 4DS securities. Although reasonable care has been taken to ensure that the facts stated in this presentation are accurate and that the opinions expressed are fair and reasonable, no representation or warranty, express or implied, is made as to the fairness, accuracy, completeness or correctness of the information, opinions and conclusions contained in this presentation. To the maximum extent permitted by law, none of 4DS, its officers, directors, employees and agents, nor any other person, accepts any responsibility and liability for the content of this presentation including, without limitation, any liability arising from fault or negligence, for any loss arising from the use of or reliance on any of the information contained in this presentation or otherwise arising in connection with it. Forward looking statements This presentation contains certain forward looking statements that are based on the Company s management s beliefs, assumptions and expectations and on information currently available to management. Such forward looking statements involve known and unknown risks, uncertainties, and other factors which may cause the actual results or performance of 4DS to be materially different from the results or performance expressed or implied by such forward looking statements. Such forward looking statements are based on numerous assumptions regarding the Company s present and future business strategies and the political and economic environment in which 4DS will operate in the future, which are subject to change without notice. Past performance is not necessarily a guide to future performance and no representation or warranty is made as to the likelihood of achievement or reasonableness of any forward looking statements or other forecast. To the full extent permitted by law, 4DS and its directors, officers, employees, advisers, agents and intermediaries disclaim any obligation or undertaking to release any updates or revisions to information to reflect any change in any of the information contained in this presentation (including, but not limited to, any assumptions or expectations set out in the presentation). The information presented in this presentation is subject to change without notice and 4DS does not have any responsibility or obligation to inform you of any matter arising or coming to their notice, after the date of this presentation, which may affect any matter referred to in this presentation. The distribution of this presentation may be restricted by law and you should observe any such restrictions. 2

Welcome - Jim Dorrian Jim Dorrian is the non-executive Chairman of 4DS. Former partner at Crosspoint Venture Partners, a prestigious Silicon Valley VC firm. Been a CEO and Board Member of several multinational Silicon Valley companies. Holds a Bachelor of Arts in Economics and Communications from Indiana University. Invested over A$1 mil cash in 4DS since taking Chair, more recently an additional A$250,000 in early 2018 Substantial shareholder over 50 million shares Has never taken any salary or fees following ASX listing, directors fees are taken in scrip each year at June 30 price Has founded and exited Silicon Valley companies with cumulative exit value in excess of US$7 billion US$1 billion US$4 billion US$610 million US$440 million 3

GLOBAL DATA EXPLOSION PRESENTS HUGE CHALLENGES. The semiconductor industry recognises the challenge and is investing billions of dollars annually on research and development to create a solution. 4

THE CHALLENGE. DRAM and NAND Flash are the main technologies utilized today. Both are US$40-50 billion annual markets and growing. DRAM is super-fast, has exceptional endurance but is expensive and volatile A new innovation is required and the industry refers to it as Storage Class Memory - over time this is predicted to have a market size as large as DRAM and NAND Flash NAND Flash is slow, has limited endurance but is cheap and non-volatile 5

Access Time (Sec) STORAGE CLASS MEMORY. Storage NAND Flash STORAGE CLASS MEMORY Combines the best characteristics of DRAM and NAND Flash Memory Non-Volatile Volatile Emerging as the leading new category to extend the memory hierarchy. Storage Class Memory Die Cost ($/GB) DRAM Battleground for next generation memory technology. Faster DRAM-like read speed Cheaper NAND Flash-like costs Non-volatile Retains data when power is off 6

THE STORAGE CLASS MEMORY SOLUTION. World-leading Silicon Valley based Interface Switching ReRAM developer 4DS is the most advanced Interface Switching ReRAM 19 US patents developed and granted and 4 pending The most promising Interface Switching ReRAM cell for Storage Class Memory Joint development agreement with Western Digital subsidiary HGST since 2014 Strategic collaboration with imec signed in November 2017 Successful placement/option exercise in November 2017 raised A$3.83 mil 7

STORAGE CLASS MEMORY REQUIREMENTS. Requirements Based on well-understood physics to be sustainable over generations Area based to achieve cost and density as close as possible to NAND Flash Capable of speed comparable to DRAM Endurance suitable for Storage Class Memory As much retention as possible to meet Storage Class Memory requirements As much retention as possible without sacrificing speed and endurance Tunable technology in the vast opportunity between DRAM and NAND Flash 8

STORAGE CLASS MEMORY REQUIREMENTS. 4DS Requirements Based on well-understood physics to be sustainable over generations Area based to achieve cost and density as close as possible to NAND Flash Capable of speed comparable to DRAM Endurance suitable for Storage Class Memory As much retention as possible to meet Storage Class Memory requirements As much retention as possible without sacrificing speed and endurance Tunable technology in the vast opportunity between DRAM and NAND Flash 9

PARAMETERS NEEDED MET. 4DS Interface Switching ReRAM has displayed enough relevant and meaningful data in each category to now move immediately to production of a Megabit chip, a giant step forward. Scales to geometries needed for high-density memory and 3D : 40nm memory cell Endurance far exceeds NAND Flash Endurance yield >97% Read speed comparable to DRAM an area-based ReRAM first No need for speed crippling error correction a ReRAM first Retention data adequate for Storage Class Memory 10

COLLABORATION AGREEMENT. imec, is the world s #1 independent semiconductor development institute Collaborates with the who s who of electronic products and systems Collaborates with makers of high-volume high-density memories Has a world leading track record in the transfer of semiconductor processes Uses the same tools as industry for high-volume production of high-density memories Has a proven megabit memory platform to fast track development of Megabit chip Used this platform to explore a wide range of emerging memories 11

COLLABORATION OBJECTIVES. Imec and 4DS have already commenced the 2018 development schedule End goal is to fabricate a megabit 4DS Interface Switching chip with a fully functioning memory Develop a fully transferable fabrication compatible process Mimic industry standard high volume production Utilizing imec s proven megabit memory platform reduces time and cost Report technical progress to shareholders more often upon significant developments 12

JOINT DEVELOPMENT AGREEMENT. HGST, is a subsidary of Western Digital Corporation (US$27 billion market cap), the largest global leader in digital storage. Strategic innovator in emerging high growth technologies Commenced JDA in 2014 Renewed in 2015, 2016 and 2017 Insight into what is important in a data-centric world Siva Sivaram, Head of Memory at Western Digital, commented We are committed to ReRAM, it is scalable with greater density, lower cost and latency and longer endurance * *12/8/2016 EE Times 14 Views from the Flash Summit 13

SUMMARY. 4DS is developing a breakthrough Interface Switching ReRAM Storage Class Memory solution Significant progress to date is pivotal for Storage Class Memory Four year strategic partnership with HGST, leader in digital storage Imec - strategic collaboration to develop megabit chip with the world-leading researcher in nano electronics Consistently achieves stated milestones Strong patent portfolio with 19 granted patents wholly owned and developed in-house World-class team of memory specialists, material scientists and test engineers Board experienced in founding, building and exiting high tech companies Sufficient cash to meet current objectives 4DS is addressing the massive memory demands of tomorrow 14

THANK YOU SILICON VALLEY 3155 Skyway Court Fremont CA 94539 UNITED STATES ABN 43 145 590 110 ASX Code: 4DS www.4dsmemory.com david@4dsmemory.com AUSTRALIA Level 2, 50 Kings Park Road West Perth WA 6005 AUSTRALIA 15

THE LEAP TO STORAGE CLASS MEMORY. Achieves Working 40nm ReRAM Cells Achieves Endurance Milestone 4DS ReRAM Reaches Read Speed Comparable to DRAM Renews HGST Agreement imec Collaboration - Focused on Megabit chip development - Current retention data is sufficient - A$3.83 mil placement / options exercised CORPORATE / TECH Strategic Partnership/s Development of Megabit chip October 2016 December 2016 June 2017 2 nd Half 2017 Going forward 16

BOARD AND MANAGEMENT. Global expertise founding and building high-tech companies. JIM DORRIAN Non-Executive Chairman Dr GUIDO ARNOUT CEO & Managing Director HOWARD DIGBY Non-Executive Director Served as CEO of several Silicon Valley companies 30+ years in commercialising electronics technology Former senior roles at IBM, Adobe, Gartner and the Economist Group Last transaction was the sale of Bill Me Later a company Jim founded and sold to PayPal for US$1 billion Extensive M&A experience Partner at VC firm Crosspoint Venture Partners Successes include, Power- Escape, CoWare, CrossCheck Technology and Silvar-Liso Non-Executive Director Elsight Ltd and Chairman of Omni Market Ltd Advisor to a number of early stage technology companies Dr SESHUBABU DESU Chief Technology Officer Expert in thin films, semiconductor processing and non-volatile memories Professor, Dean and Head of Electrical Engineering at various universities DAVID McAULIFFE Executive Director Experienced company director Involved in numerous capital raisings and in-licensing of technologies Founder of several companies in Australia, France and the UK, many of which are now ASX listed MICHAEL VAN BUSKIRK Chief Engineering Officer Executive roles with a number of leading memory companies in Silicon Valley These include, Adesto Technologies Corporation, Innovative Silicon Inc and Spansion Inc. 17

CAPITAL STRUCTURE. ASX Code Market Cap (Fully Diluted) Ordinary Shares on Issue Unlisted Options Cash 4DS A$86 Million* 942 Million 124 Million ~A$4.5 Million Feb 2018 Board and Management 15% Top 20 33% * As at 2nd Feb 2018 18