APPLICATION NOTE Migrating to MX25L1606E / MX25L8006E from MX25L1605D / MX25L8005

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Transcription:

Publication Number: AN-055

Contents 1. Introduction...2 2. General Features...3 2-1. Feature Comparison...3 Table 2-1: Major Feature Comparison of 8Mb Devices...3 Table 2-2: Major Feature Comparison of 16Mb Devices...4 2-2. Command Set Comparison...5 Table 2-3: Command Table Comparison of 8Mb Devices...5 Table 2-4: Command Table Comparison of 16Mb Devices...6 2-3. AC and DC Specifications Comparison...7 Table 2-5: AC & DC Characteristic Comparison of 8Mb Devices...7 Characteristic...7 Table 2-6: AC & DC Characteristic Comparison of 16Mb Devices...7 Characteristic...7 3. Device ID...8 Table 3-1: Device ID Comparison of 8Mb Devices...8 Table 3-2: Device ID Comparison of 16Mb Devices...8 4. References...8 Revision History...9 1

1. Introduction This application note indicates the differences between MX25L1606E/MX25L8006E and MX25L1605D /MX25L8005. In Single I/O mode, MX25L1606E and MX25L8006E are identical in forms and functions with MX25L1605D and MX25L8005. MX25L1606E and MX25L8006E are capable of Dual Output mode (Single Input / Dual Output) but no longer support x2 I/O (Dual Input / Dual Output) mode and Continuous Program (CP) mode. The comparison and features of new products are described in the following sections. The information provided is based on the data available at the time. The MX25L1606E and MX25L8006E datasheet may override this application note if there is a difference description for the same in the datasheet. 2

2. General Features 2-1. Feature Comparison The Dual Output mode (1I/2O) is one of the new features of MX25L1606E and MX25L8006E, and this new product accepts wide range of clock rate from DC (Direct Current)~ 86MHz. Table 2-1: Major Feature Comparison of 8Mb Devices Feature MX25L8005 MX25L8006E Voltage 2.7 to 3.6V 2.7 to 3.6V Interface x1 x1, 1I/2O* Package 8-SOP(150mil/209mil) 8-WSON(6x5mm) 8-USON(4x4mm) 8-PDIP(300mil) 8-SOP(150mil/209mil) 8-WSON(6x5mm) 8-USON(4x4mm) 8-PDIP(300mil) Operation Temperature -40 C to 85 C -40 C to 85 C Sector Structure 4KB 4KB Block Structure 64KB 64KB Clock Rate 86MHz 86MHz Byte Program No Yes CP (Continuous Program) Mode ACC Mode Yes No OTP No 512 bits Security Register No Yes Endurance (typ.) 100k 100k Data Retention 20y 20y No No *Note: MX25L8006E in Dual Output mode is single input, dual output (1I/2O). 3

Table 2-2: Major Feature Comparison of 16Mb Devices Feature MX25L1605D MX25L1606E Voltage 2.7 to 3.6V 2.7 to 3.6V Interface x1, x2 x1, 1I/2O* Package 8-SOP (150mil/209mil) 8-WSON (6x5mm) 8-USON (4x4mm) 8-PDIP (300mil) 8-SOP (150mil/209mil) 8-WSON (6x5mm) 8-USON (4x4mm) 8-PDIP (300mil) Operation Temperature -40 C to 85 C -40 C to 85 C Sector Structure 4KB 4KB Block Structure 64KB 64KB Clock Rate 86MHz 86MHz Byte Program Yes Yes CP (Continuous Program) Mode ACC Mode Yes No OTP 512 bits 512 bits Security Register Yes Yes Endurance (typ.) 100k 100k Data Retention 20y 20y Yes No *Note: MX25L1606E in Dual Output mode is single input, dual output (1I/2O). 4

2-2. Command Set Comparison The new product adds new command Double Output Mode Command (DREAD) for the new feature. Table 2-3: Command Table Comparison of 8Mb Devices Command MX25L8005 MX25L8006E WREN (Write Enable) 06 06 WRDI (Write Disable) 04 04 RDID (Read Identification) 9F 9F RDSR (Read Status Register) 05 05 WRSR (Write Status Register) 01 01 READ (Read Data) 03 03 FATS READ (Fast Read Data) 0B 0B DREAD (Dual Output Read Command) -- 3B SE (Sector Erase) 20 20 BE (Block Erase) 52 or D8 52 or D8 CE (Chip Erase) 60 or C7 60 or C7 PP (Page Program) 02 02 DP (Deep Power Down) B9 B9 RDP (Release from Deep Power Down) AB AB RES (Read Electronic ID) AB AB REMS 90 90 (Read Electronic Manufacturer & Device ID) ENSO (Enter Secured OTP) -- B1 EXSO (Exit Secured OTP) -- C1 RDSCUR (Read Security Register) -- 2B WRSCUR (Write Security Register) -- 2F 5

Table 2-4: Command Table Comparison of 16Mb Devices Command MX25L1605D MX25L1606E WREN (Write Enable) 06 06 WRDI (Write Disable) 04 04 RDID (Read Identification) 9F 9F RDSR (Read Status Register) 05 05 WRSR (Write Status Register) 01 01 READ (Read Data) 03 03 FATS READ (Fast Read Data) 0B 0B 2READ (Dual I/O Read Command) BB -- DREAD (Dual Output Read Command) -- 3B SE (Sector Erase) 20 20 BE (Block Erase) D8 52 or D8 CE (Chip Erase) 60 or C7 60 or C7 PP (Page Program) 02 02 CP (Continuous Program Mode) AD -- DP (Deep Power Down) B9 B9 RDP (Release from Deep Power Down) AB AB RES (Read Electronic ID) AB AB REMS 90 90 (Read Electronic Manufacturer & Device ID) REMS2 (Read ID for Dual I/O Mode) EF -- ENSO (Enter Secured OTP) B1 B1 EXSO (Exit Secured OTP) C1 C1 RDSCUR (Read Security Register) 2B 2B WRSCUR (Write Security Register) 2F 2F ESRY (Enable SO to Output RY/BY#) 70 -- DSRY (Disable SO to Output RY/BY#) 80 -- 6

2-3. AC and DC Specifications Comparison Table 2-5: AC & DC Characteristic Comparison of 8Mb Devices Characteristic MX25L8005 MX25L8006E ISB1 10uA 50uA ICC2 15mA 20mA ICC5 15mA 20mA tshsl 100 ns 15ns (read), 50ns (write) Table 2-6: AC & DC Characteristic Comparison of 16Mb Devices Characteristic MX25L1605D MX25L1606E ISB1 20uA 50uA ftsclk 10k~50MHz 10K~80MHz tclqv 10/8 ns 8/6 ns thhqx 10 ns 6ns thlqz 10ns 6ns tshsl 40ns 15ns (read), 50ns (write) 7

3. Device ID Table 3-1: Device ID Comparison of 8Mb Devices Command Type MX25L8005 MX25L8006E Remarks Manufacturer ID C2 C2 Electric ID 13 13 RES Command REMS C2,20,14 C2,20,14 RDID Command Table 3-2: Device ID Comparison of 16Mb Devices Command Type MX25L1605D MX25L1606E Remarks Manufacturer ID C2 C2 Electric ID 14 14 RES Command REMS C2,20,15 C2,20,15 RDID Command 4. References The following datasheets were used for preparing this comparison note: Datasheet Location Date Issued Versions MX25L8005 Macronix Website Jun. 05, 2009 2.3 MX25L8006E Macronix Website May. 19, 2010 1.1 MX25L1605D Macronix Website Apr. 29, 2009 1.5 MX25L1606E Macronix Website May. 19, 2010 1.1 For more functional and parametric specifications, please refer to the datasheet on the Macronix Website at http://www.macronix.com/ and go to: Products/Flash Memory/Serial Flash. 8

Revision History Revision No. Description Page Date 1.1 1. Modified Table 2-1, 2-2 and 2-3 P2-3 FEB/04/2010 1.2 1. Modified DMC description P6 MAR/31/2010 2. Revised notes for 1I/2O P2-3 3. Revised Table 2-1 P2 4. Changed DMC wording to SFDP All JUN/01/2010 5. Revised Introduction P2 6. Revised Table 3-1. 3-2 P8 7. Removed SFDP All JUL/2/2010 9

Macronix's products are not designed, manufactured, or intended for use for any high risk applications in which the failure of a single component could cause death, personal injury, severe physical damage, or other substantial harm to persons or property, such as life-support systems, high temperature automotive, medical, aircraft and military application. Macronix and its suppliers will not be liable to you and/or any third party for any claims, injuries or damages that may be incurred due to use of Macronix's products in the prohibited applications. Copyright Macronix International Co., Ltd. 2010. All Rights Reserved. Macronix, MXIC, MXIC Logo, MX Logo, are trademarks or registered trademarks of Macronix International Co., Ltd. The names and brands of other companies are for identification purposes only and may be claimed as the property of the respective companies. For the contact and order information, please visit Macronix s Web site at: http://www.macronix.com MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice. 10