M25PXX 512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface

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1 512 Kbit to 32 Mbit, Low Voltage, erial Flash Memory ith 40 MHz or 50 MHz PI Bus Interface ATA BRIEF FEATURE UMMARY 512Kbit to 32Mbit of Flash Memory Page Program (up to 256 Bytes) in 1.4ms (typical) ector Erase (256 Kbit or 512Kbit) Bulk Erase (512Kbit to 32Mbit) 2.7 to 3.6V ingle upply Voltage PI Bus ompatible erial Interface 40MHz to 50MHz lock Rate (maximum) eep Power-down Mode 1µA (typical) Electronic ignatures JEE tandard Two-Byte ignature (20xxh) RE Instruction, One-Byte, ignature, for backward compatibility More than Erase/Program ycles per ector More than 20 Year ata Retention Figure 1. Packages VFPN8 (ME) 8x6mm (MLP8) VFPN8 (MP) (MLP8) Table 1. Product List Reference Part Number M25P32 M25P16 M25P80 M25P40 M25P20 M25P10-A M25P05-A O16 (MF) 300 mil width 8 1 O8 (MN) 150 mil width October 2004 For further information contact your local T sales office. 1/7

2 UMMARY ERIPTION The is a 512Kbit to 32Mbit (2M x 8) erial Flash Memory, with advanced write protection mechanisms, accessed by a high speed PI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The memory is organized as a number of sectors, each containing 256 or 128 pages. Each page is 256 bytes wide. The whole memory can be erased using the Bulk Erase instruction, or a sector at a time, using the ector Erase instruction. Figure 2. Logic iagram Figure 3. O8 and VFPN onnections V AI V V Note: 1. There is an exposed die paddle on the underside of the MLP8 package. This is pulled, internally, to V, and must not be allowed to be connected to any other voltage or signal line on the PB. Figure 4. O16 onnections V Table 2. ignal Names erial lock erial ata Input AI10258 V V 9 AI10260 V V erial ata Output hip elect rite Protect Hold upply Voltage Ground Note: 1. = on t Use 2/7

3 Figure 5. Block iagram ontrol Logic High Voltage Generator I/O hift Register Address Register and ounter 256 Byte ata Buffer tatus Register Top of Address pace Y ecoder ize of the read-only memory area 00000h 256 Bytes (Page ize) X ecoder 000FFh AI /7

4 Table 3. Instruction et Instruction escription One-byte Instruction ode Address Bytes ummy Bytes ata Bytes REN rite Enable h RI rite isable h RI Read Identification Fh to 3 RR Read tatus Register h to RR rite tatus Register h REA Read ata Bytes h to FAT_REA Read ata Bytes at Higher peed Bh to PP Page Program h to 256 E ector Erase h BE Bulk Erase h P eep Power-down B9h RE Release from eep Power-down, and Read Electronic ignature ABh to Release from eep Power-down Table 4. tatus Register Format b7 b0 R 0 0 BP2 BP1 BP0 EL IP tatus Register rite Protect Block Protect Bits rite Enable Latch Bit rite In Progress Bit 4/7

5 PART NUMBERING Table 5. Ordering Information cheme Example: M25P80 V MP 6 T P evice Type M25P = erial Flash Memory for ode torage evice Function 32 = 32Mbit (4M x 8) 16 = 16Mbit (2M x 8) 80 = 8Mbit (1M x 8) 40 = 4Mbit (512K x 8) 20 = 2Mbit (256K x 8) 10-A = 1Mbit (128K x 8) 05-A = 512Kbit (64K x 8) Operating Voltage V = V = 2.7 to 3.6V Package ME = VFPN8 8x6mm (MLP8) MP = VFPN8 (MLP8) MF = O16 (300 mil width) MN = O8 (150 mil width) evice Grade 6 = Industrial temperature range, 40 to 85. evice tested with standard test flow 3 = evice tested with High Reliability ertified Flow 1. Automotive temperature range ( 40 to 125 ) Option blank = tandard Packing T = Tape and Reel Packing Plating Technology blank = tandard npb plating P = Lead-Free and RoH compliant G = Lead-Free, RoH compliant, b 2 O 3 -free and TBBA-free Note: 1. T strongly recommends the use of the Automotive Grade devices for use in an automotive environment. The High Reliability ertified Flow (HRF) is described in the quality note NEE9801. Please ask your nearest T sales office for a copy. For a list of available options (speed, package, etc.) or for further information on any aspect of this device, please contact your nearest T ales Office. 5/7

6 REVIION HITORY Table 6. ocument Revision History ate Rev. escription of Revision 08-Oct First release 6/7

7 Information furnished is believed to be accurate and reliable. However, TMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TMicroelectronics. pecifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. TMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of TMicroelectronics. The T logo is a registered trademark of TMicroelectronics. All other names are the property of their respective owners 2004 TMicroelectronics - All rights reserved TMicroelectronics group of companies Australia - Belgium - Brazil - anada - hina - zech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - ingapore - pain - weden - witzerland - United Kingdom - United tates of America 7/7