Protection for Lithium-Ion/Lithium Polymer Batteries (1 cell) Monolithic IC MM3090 Series

Transcription

1 Protection for Lithium-Ion/Lithium Polymer Batteries (1 cell) Monolithic IC MM3090 Series pril 26, 2004 Outline This is a protection IC developed for use with 1-serial cell lithium-ion/lithium polymer rechargeable batteries. It provides a function to protect the batteries by detecting overcharge, overdischarge, discharge overcurrent, and other abnormalities and turning off the external Nch MOS FET. The outputs of COUT pin(charge FET control pin) and pin(discharge FET control pin) are CMOS outputs, so that the external Nch MOS FET can be driven directly. charge overcurrent detection function is provided for abnormal charger detection. In addition, the IC has a built-in timer circuit (for each detection ), so that the protection circuitly can be comprised with fewer external components. Furthermore, by setting the pin at DD level, overcharge, overdischarge, discharge overcurrent can be detected, and the during release can be shortened. The device returns from an overdischarge state if the battery voltage is higher than the overdischarge release voltage when a charger is connected or even not connected. Features 1. Uses high voltage CMOS process bsolute maximum rating for charger connection Detection voltage precision Overcharge ±20m (Ta=25 C), ±25m (Ta=-5~60 C) Overdischarge ±35m (Ta=25 C), ±58m (Ta=-5~60 C) Discharge overcurrent ±10m (Ta=25 C), ±15m (Ta=-5~60 C) 3. Built-in detection s (timer circuit) Overcharge detection 0.25~7.0s (mask option) 4~128ms (mask option) Discharge overcurrent detection 4~128ms (mask option) Short detection 4. Includes a charge overcurrent detection function 5. Overcharge, overdischarge, and discharge overcurrent can be detected, and the during release can be shortened with the pin charge disable function (mask option) Package SOT-26 SON-6

2 Pin ssignment COUT 4 5 DD 6 SOT-26 (TOP IEW) SON-6 (TOP IEW) 1 2 DD COUT 6 - Block Diagram DD Oscillator Counter D1 Overcharge D2 Overdischarge Charging overcurrent D4 D3 Logic circuit Delay Logic circuit Level shift Short Discharging overcurrent COUT -

3 Pin Description SOT-26 Pin no. Pin name Functions 1 Output of overdischarge detection. Output type is CMOS. 2 - Input terminal connected to charger negative voltage. 3 COUT Output of overcharge detection. Output type is CMOS. 4 Delay shorten terminal. 5 DD DD terminal. Connected to IC substrate. 6 terminal. Connected to ground. SON-6 Pin no. Pin name Functions 1 Output of overdischarge detection. Output type is CMOS. 2 DD DD terminal. Connected to IC substrate. 3 terminal. Connected to ground. 4 Delay shorten terminal. 5 COUT Output of overcharge detection. Output type is CMOS. 6 - Input terminal connected to charger negative voltage. bsolute Maximum Ratings (TOPR=25 C, =0) Item Symbol Ratings Units Supply voltage DD -0.3~12 terminal input voltage - DD-28~DD+0.3 terminal input voltage -0.3~DD+0.3 COUT terminal output voltage COUT DD-28~DD+0.3 terminal output voltage -0.3~DD+0.3 Operation temperature TOPR -40~+85 C Storage temperature TSTG -55~+125 C Electrical Characteristics TOPR=25 C (Models listed : MM3090) Item Symbol Measurement conditions Min. Typ. Max. Units *1 Operating input voltage DD1 DD Minimum operating voltage for 0 charging ST DD--, DD-=0 1.2 Overcurrent release resistance RSHORT DD=3.6, -= kω F pin PULL DOWN resistance R DD= kω H COUT Nch ON voltage OL1 IOL=30µ, DD= I COUT Pch ON voltage OH1 IOL=-30µ, DD= J Nch ON voltage OL2 IOL=30µ, DD= K Pch ON voltage OH2 IOL=-30µ, DD= L Current consumption IDD DD=3.9, -= µ M Current consumption at stand-by IS DD= µ M Note: 1 The test circuit symbols.

4 TOPR=25 C Item Symbol Measurement conditions Min. Typ. Max. Units *1 Overcharge DET1 R1=330Ω B Overcharge release voltage REL1 R1=330Ω B Overcharge hysteresis voltage HYS1 R1=330Ω, HYS1=DET1-REL B voltage DET2 -=0, R1=330Ω D Overdischarge release voltage REL2 -=OPEN, R1=330Ω D DET3 DD=3, R2=2.2kΩ F DET4 DD=3, R2=2.2kΩ G Short SHORT DD=3 DD-1.2 DD-0.9 DD-0.6 F Overcharge detection Overcharge release Overdischarge release detection release detection release tdet1 DD= s B trel1 DD= ms B tdet2 DD= ms D trel2 DD=3, -= ms E tdet3 DD=3, -= ms F trel3 DD=3, -= ms G tdet4 DD=3, -= ms G trel4 DD=3, -= ms F Short detection tshort DD=3, -= µs F Note: 1 The test circuit symbols.

5 TOPR=5~60 C 2 Item Symbol Measurement conditions Min. Typ. Max. Units *1 Overcharge DET1 R1=330Ω B Overcharge release voltage REL1 R1=330Ω B Overcharge hysteresis voltage HYS1 R1=330Ω, HYS1=DET1-REL B voltage DET2 -=0, R1=330Ω D Overdischarge release voltage REL2 -=OPEN, R1=330Ω D DET3 DD=3, R2=2.2kΩ F DET4 DD=3, R2=2.2kΩ G Short SHORT DD=3 DD-1.2 DD-0.9 DD-0.6 F Overcharge detection Overcharge release Overdischarge release detection release detection release tdet1 DD= s B trel1 DD= ms B tdet2 DD= ms D trel2 DD=3, -= ms E tdet3 DD=3, -= ms F trel3 DD=3, -= ms F tdet4 DD=3, -= ms G trel4 DD=3, -= ms G Short detection tshort DD=3, -= µs F Note: 1 The test circuit symbols. 2 The all parameters on this page is guaranteed by design.

6 TOPR=-30~70 C 2 Item Symbol Measurement conditions Min. Typ. Max. Units *1 Overcharge DET1 R1=330Ω B Overcharge release voltage REL1 R1=330Ω B Overcharge hysteresis voltage HYS1 R1=330Ω, HYS1=DET1-REL B voltage DET2 -=0, R1=330Ω D Overdischarge release voltage REL2 -=0, R1=330Ω D DET3 DD=3, R2=2.2kΩ F DET4 DD=3, R2=2.2kΩ G Short SHORT DD=3 DD-1.2 DD-0.9 DD-0.6 F Overcharge detection Overcharge release Overdischarge release detection release detection release tdet1 DD= s B trel1 DD= ms B tdet2 DD= ms D trel2 DD=3, -= ms E tdet3 DD=3, -= ms F trel3 DD=3, -= ms F tdet4 DD=3, -= ms G trel4 DD=3, -= ms G Short detection tshort DD=3, -= µs F Note: 1 The test circuit symbols. 2 The all parameters on this page is guaranteed by design.

7 Measuring Circuit DD H DD B DD I DD C DD J DD D DD K DD E DD L DD F DD M DD G DD

8 pplication Circuit R1 330 DD Oscillator Counter C1 0.1µ D1 Overcharge D2 Overdischarge Charging overcurrent D4 D3 Logic circuit Delay Logic circuit Level shift Short C2 0.1µ Discharging overcurrent - COUT C3 0.1µ R2 2.2k pplication hints R1 and C1 stabilize a supply voltage ripple. However, the rises by the current of penetration in IC of the voltage detection when R1 is enlarged, and the value of R1 is adjusted to 1kΩ or less. Moreover, adjust the value of C1 to 0.01µF or more to do the stability operation, please. R1 and R2 resistors are current limit resistance if a charger is connected reversibly or a highvoltage charger that exceeds the absolute maximum rating is connected. R1 and R2 may cause a power consumption will be over rating of power dissipation, therefore the R1+R2 should be more than 1kΩ. Moreover, if R2 is too enlarged, the charger connection release cannot be occasionally done after the overdischarge is detected, so adjust he value of R2 to 10kΩ or less, please. C2 and C3 capacitors have effect that the system stability about voltage ripple or imported noise. fter check characteristics, decide that these capacitors should be inserted or not, where should be inserted, and capacitance value, please.