30 V Silicon Varactor Diodes MSV34,000, SMTD & SMTV Series
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1 30 V Silicon Varactor Diodes MSV34,000, SMTD & SMTV Series Description The work horse of varactors these diodes are built tough with fully passivated mesa construction and Aerofl ex / Metelics trimetallization. Featuring a nominal gamma of 0.46 these diodes fi nd application in tunable fi lters and oscillators up to 8 GHz. Features 0 to 30 Volt tuning voltage Tuning ratios up to 4.7 typical Screening per MIL-PRF-9500 and MIL-PRF available Absolute Maximum Ratings Parameters Reverse Voltage Forward Current Power Dissipation Chip E28, E28X, SOD323, SOT23 & H20, P55 & T86 Operating Temperature Chip E28, E28X, SOD323, SOT23 & H20, P55 & T86 Storage Temperature Soldering Temperature Chip Packaged 30 V 0 ma Rating 250 mw at T C = 25 C, derate linearly to zero at T C = +200 C 0 mw at T A = 25 C, derate linearly to zero at T A = +50 C 0 mw at T A = 25 C, derate linearly to zero at T A = +200 C -65 C to +200 C -65 C to +50 C -65 C to +200 C Same as operating temperature C for seconds +260 C peak per JEDEC J-STD-20C Revision Date: /24/05 This datasheet has been downloaded from at this page
2 Chip Electrical Specifications, T A = 25 C Model 30 V Silicon Varactor Diodes MSV34,000 Series V BR C J Tuning Ratio Q NOM MAX TYP V MSV34, ,300.3 C2 MSV34, ,300.0 C2 MSV34, , C2 MSV34, , C2 MSV34, , C2 MSV34, , C2 MSV34, , C2 MSV34, , C22 Test Conditions I R = A F = MHz = 0 V & = 30 V F = MHz F = 50 MHz R S MAX F = GHz Outline Typical Performance, Chips MSV34,060 MSV34,064 MSV34,067 MSV34,069 0 MSV34,075 MSV34,082 MSV34,087 MSV34,092 C J C J Revision Date: /24/05
3 30 V Silicon Varactor Diodes MSV34,000 Series Packaged Electrical Specifications, T A = 25 C Model V BR Tuning Ratio Q NOM MAX V C P TYP L P TYP nh Package MSV34,060-E28 / 28 X , E28 / 28X MSV34,060-H , H20 MSV34,060-T , T86 MSV34, , MSV34,060-P , P55 MSV34,064-E28 / 28 X , E28 / 28X MSV34,064-H , H20 MSV34,064-T , T86 MSV34, , MSV34,064-P , P55 MSV34,067-E28 / 28 X , E28 / 28X MSV34,067-H , H20 MSV34,067-T , T86 MSV34, , MSV34,067-P , P55 MSV34,069-E28 / 28 X , E28 / 28X MSV34,069-H , H20 MSV34,069-T , T86 MSV34, , MSV34,069-P , P55 MSV34,075-E28 / 28 X , E28 / 28X MSV34,075-H , H20 MSV34,075-T , T86 MSV34, , MSV34,075-P , P55 MSV34,082-E28 / 28 X , E28 / 28X MSV34,082-H , H20 MSV34,082-T , T86 MSV34, , MSV34,082-P , P55 MSV34,087-E28 / 28 X , E28 / 28X MSV34,087-H , H20 MSV34,087-T , T86 MSV34, , MSV34,087-P , P55 MSV34,092-E28 / 28 X , E28 / 28X MSV34,092-H , H20 MSV34,092-T , T86 MSV34, , MSV34,092-P , P55 Test Conditions I R = A F = MHz = 0 V & = 30 V F = MHz F = 50 MHz 3 Revision Date: /24/05
4 Typical Performance, Packaged MSV34,060-H20/T86 MSV34,064-H20/T86 MSV34,067-H20/T86 MSV34,069-H20/T86 30 V Silicon Varactor Diodes MSV34,000 Series 0 MSV34,075-H20/T86 MSV34,082-H20/T86 MSV34,087-H20/T86 MSV34,092-H20/T MSV34,060-E28/ MSV34,064-E28/ MSV34,067-E28/ MSV34,069-E28/ MSV34,075-E28/ MSV34,082-E28/ MSV34,087-E28/ MSV34,092-E28/ Revision Date: /24/05
5 30 V Silicon Varactor Diodes SMTD & SMTV Series Configuration Codes -0S -S -2ST -3CA 4CC Plastic Packaged Electrical Specifications, T A = 25 C Model Configuration NOM MAX Tuning Ratio Q Package SMTV300-SOT23-0S, S, 2SF, 3CA, 4CC ,000 SOT23 SMTV3002-SOT23-0S, S, 2SF, 3CA, 4CC ,800 SOT23 SMTV3004-SOT23-0S, S, 2SF, 3CA, 4CC ,400 SOT23 SMTV3006-SOT23-0S, S, 2SF, 3CA, 4CC ,0 SOT23 SMTV3008-SOT23-0S, S, 2SF, 3CA, 4CC ,800 SOT23 SMTV30-SOT23-0S, S, 2SF, 3CA, 4CC ,600 SOT23 SMTD300-SOD ,000 SOD323 SMTD3002-SOD ,800 SOD323 SMTD3004-SOD ,400 SOD323 SMTD3006-SOD ,0 SOD323 SMTD3008-SOD ,800 SOD323 SMTD30-SOD ,600 SOD323 Test Conditions F = MHz = 0 V = 30 V F = MHz F = 50 MHz Typical Performance, Plastic Packaged 0 SMTD300 SMTV300 SMTD3002 SMTV3002 SMTD3004 SMTV SMTD3006 SMTV3006 SMTD3008 SMTV3008 SMTD30 SMTV30 5 Revision Date: /24/05
6 Outline Drawings C2 30 V Silicon Varactor Diodes MSV34,000, SMTD & SMTV Series C22 7 [.432] 3 [.330] 7 [.432] 3 [.330] > 2 [0.05] Top Contact Back Contact 6 [0.52] 4 [0.2] E28 E28X Cathode Dot Cut lead is Cathode 78 [4.52] 62 [4.5] 0 [2.540] Min. 2 Pls 25 [0.635] 5 [0.38] 95 [2.43] 85 [2.59] 50 [.270] 40 [.06] Epoxy 50 [.270] Max. 5 [0.27] 4 [0.356] Max. 50 [.270] 40 [.06] 30 [0.762] Max. 20 [0.508] [0.254] 95 [2.43] 85 [2.59] 30 [0.762] 20 [0.508] Epoxy 25 [0.635] 5 [0.38] 5 [0.38] 8 [0.203] 8 [0.203] 4 [0.2] 6 Revision Date: /24/05
7 30 V Silicon Varactor Diodes MSV34,000, SMTD & SMTV Series Outline Drawings (Continued) H20 (hermetic) P55 (hermetic) Cut lead is Cathode 2 [2.59] 8 [2.057] Dia 23 [0.584] 7 [0.432] 55 [.397] 5 [.295] Dia. 8 [0.203] 4 [0.2] 4 [2.642] 92 [2.337] Square 6 [0.52] 30 [3.302] Min. 2 Pls Body 55 [.397] 45 [.43] 35 [0.889] 25 [0.635] Cathode (P55) Anode (P55p) T86 (hermetic) 24 [3.50] Dia. 8 [2.997] [2.59] 75 [.905] Epoxy 27 [0.686] Max. 64 [.626] 60 [.524] 55 [.397] 45 [.43] Body Cathode Dot 50 [.270] Max. 225 [5.75] 205 [5.207] 64 [.626] 60 [.524] 33 [0.838] 27 [0.686] Gold Metalization 64 [.626] Dia. 60 [.524] 83 [2.8] Dia. 77 [.956] Cathode (T86) Anode (T86p) 6 [0.406] 2 [0.305] 40 [.06] Min. Bottom View 7 Revision Date: /24/05
8 Outline Drawings (Continued) 30 V Silicon Varactor Diodes MSV34,000, SMTD & SMTV Series SOT23 SOD323 6 [2.692] 94 [2.388] 20 [3.048] 5 [2.667] 75 [.905] 63 [.600] CL 2 [0.533] [0.254] 3 57 [.448] 45 [.43] 98 [2.489] 55 [.397] 83 [2.8] 47 [.94] 43 [.092] 34 [0.864] 6 [0.406] [0.254] 22 [0.559] 7 [0.432] 2 [0.254] 5 [0.27] 79 [2.007] 7 [.803] 6 [0.52] 4 [0.2] Side View Cathode Strip 6 [0.52] 43 [.092] 34 [0.864] 4 [0.2] Aeroflex / Metelics Aerofl ex Microelectronic Solutions 975 Stewart Drive, Sunnyvale, CA TEL: Fax: sales@aeroflex-metelics.com Aerofl ex / Metelics, Inc. reserves the right to make changes to any products and services herein at any time without notice. Consult Aerofl ex or an authorized sales representative to verify that the information in this data sheet is current before using this product. Aerofl ex does not assume any responsibility or liability arising out of the application or use of any product or service described herein, except as expressly agreed to in writing by Aerofl ex; nor does the purchase, lease, or use of a product or service from Aerofl ex convey a license under any patent rights, copyrights, trademark rights, or any other of the intellectual rights of Aerofl ex or of third parties. Copyright 2003 Aerofl ex / Metelics. All rights reserved. Our passion for performance is defi ned by three attributes represented by these three icons: solution-minded, performance-driven and customer-focused. Revision Date: /24/05 A7040 (-)
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Rev. 04 15 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for
TSZL52C2V4 thru TSZL52C39 Taiwan Semiconductor. SMD Zener Diode. Small Signal Product FEATURES MECHANICAL DATA
SMD Zener Diode FEATURES - Wide zener voltage range selection : 2.4V to 39V - Designed for mounting on small surface - Extremely thin / leadless package - Packing code with suffix "G" means green compound
1N47- Series DO-41. Mechanical Data. Page <1> 18/07/08 V1.1
Features: Low profile package. Built-in strain relief. Glass passivated junction. Low inductance. Typical I R less than 5.0µA above 11V. High temperature soldering guaranteed: 260 C/10 seconds at terminals
Headset/Speaker EMI Filter with ESD Protection CM1416/D. Features. Product Description. Applications. ±30kV ESD protection on each channel per
Headset/Speaker EMI Filter with ESD Protection CM1416 Features Functionally and pin compatible with the CSPEMI201A and CM1411 OptiGuard coated for improved reliability at assembly Two channels of EMI filtering
MM5Z2V4 - MM5Z75V Zener Diodes
June 2015 MM5Z2V4 - MM5Z75V Zener Diodes Features Wide Zener Voltage Range Selection, 2.4 V to 75 V Flat Lead, Surface Mount Device Under 0.70 mm Height Extremely Small Outline Plastic Package SOD523F
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
RClamp0582B. Low Capacitance RClamp ESD and EOS Protection. PROTECTION PRODUCTS Description. Features. Mechanical Characteristics.
RClamp582B Low Capacitance RClamp ESD and EOS Protection PROTECTION PRODUCTS Description The RClamp 582B transient voltage suppressor is specifically designed to protect sensitive components which are
1N5221B - 1N5263B Zener Diodes
1N5-1N5 Zener Diodes Tolerance = 5% 1N5-1N5 Zener Diodes DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The
PESD18VF1BL. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data. 5. Pinning information
10 July 2018 Product data sheet 1. General description Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a DFN1006-2 (SOD882) leadless ultra small Surface-Mounted Device
500 mw SURFACE MOUNT ZENER DIODES
Available on commercial versions 0 mw SURFACE MOUNT ZENER DIODES DESCRIPTION Screening in reference to MIL-PRF-190 available The 1N4678UR-1 thru 1N4717UR-1 series of 0.5 watt glass surface mount DO-213AA
Features. Applications
2.5/3.3V 1-to-1 Differential to LVCMOS/LVTTL Translator Precision Edge General Description Micrel s is a 1-to-1, differential-to-lvcmos / LVTTL translator. The differential input is highly flexible and
PTVSLC3D24VB Low Capacitance TVS
Description The is a low capacitance transient voltage suppressor for high speed data interface that designed to protect sensitive electronics from damage or latch-up due to ESD lightning, and other voltage
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
PTVSHC2EN10VU Transient Voltage Suppressor
Transient Voltage Suppressor Description The ESD protector is designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computers, and PDA s. They feature large
BZT52-C2V4S SERIES SURFACE MOUNT SILICON ZENER DIODES FEATURES MECHANICAL DATA
SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 2.4 to 75 Volt POWER 200 mwatt FEATURES Planar Die construction 200mW Power Dissipation Zener Voltages from 2.4~75V 0.078(1.95) 0.068(1.75) Ideally Suited for
BZT52-B2V4~BZT52-B75 SURFACE MOUNT SILICON ZENER DIODES FEATURES MECHANICAL DATA
SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 2.4 to 75 Volt POWER 4 mwatt FEATURES Planar Die construction 4mW Power Dissipation.154(3.9).141(3.6).1(2.8).98(2.5) Zener Voltages from 2.4~75V Ideally Suited
AT-31011, AT Low Current, High Performance NPN Silicon Bipolar Transistor. Data Sheet. Description
AT-3111, AT-3133 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Avago s AT-3111 and AT-3133 are high performance NPN bipolar transistors that have been optimized for
BZW04-5V8 thru BZW TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor. FEATURES TYPICAL APPLICATIONS
TRANSZORB Transient Voltage Suppressors DO-41 (DO-204AL) FEATURES Glass passivated chip junction Available in uni-directional and bi-directional 400 W peak pulse power capability with a 10/0 μs waveform,
BZT52-B2V4S SERIES SURFACE MOUNT SILICON ZENER DIODES FEATURES MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 2.4 to 75 Volt POWER 200 mwatt FEATURES Planar Die construction 200mW Power Dissipation Zener Voltages from 2.4~75V Ideally Suited for Automated Assembly Processes
ESD7451, SZESD7451. ESD Protection Diodes. Micro Packaged Diodes for ESD Protection
ESD Protection Diodes Micro Packaged Diodes for ESD Protection The ESD751 is designed to protect voltage sensitive components that require ultra low capacitance from ESD and transient voltage events. Excellent
PTVSHC3N7VUL1 Transient Voltage Suppressor
Transient Voltage Suppressor Description The ESD protector is designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computers, and PDA s. They feature large
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
Transient Voltage Suppressor
Features: Glass Passivated Junction Low Incremental Surge Resistance, Excellent Clamping Capability Low Profile Package With Built-In Strain Relief for Surface Mounted Applications 600W Peak Pulse Power
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
2 Anode. Parameter Symbol Value Units. Max Reverse Leakage Current V IZT IZT IZK VR Nom. V Min. V Max.
SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 2.4~33 Volt POWER 25 mwatt FEATURES.42(.5).37(.95) Planar Die construction 25mW Power Dissipation Zener Voltages from 2.4~ Ideally Suited for Automated Assembly
RClamp7524T. Low Capacitance RClamp 4-Line ESD Protection. PROTECTION PRODUCTS Description. Features. Mechanical Characteristics.
Low Capacitance RClamp 4-Line ESD Protection PROTECTION PRODUCTS Description RailClamp TVS arrays are ultra low capacitance ESD protection devices designed to protect high speed data interfaces. This series
NCR402T. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data
16 October 2015 Product data sheet 1. General description LED driver consisting of a resistor-equipped PNP transistor with two diodes on one chip in a small SOT23 plastic package. 2. Features and benefits
Unidirectional ESD protection diode
Rev. 1 5 March 2012 Product data sheet 1. Product profile 1.1 General description Unidirectional ElectroStatic Discharge (ESD) protection diode in a leadless ultra small SOD882 Surface-Mounted Device (SMD)