AT-31011, AT Low Current, High Performance NPN Silicon Bipolar Transistor. Data Sheet. Description
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1 AT-3111, AT-3133 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Avago s AT-3111 and AT-3133 are high performance NPN bipolar transistors that have been optimized for operation at low voltages, making them ideal for use in battery powered applications in wireless markets. The AT uses the 3 lead SOT 23, while the AT-3111 places the same die in the higher performance lead SOT 13. Both packages are industry standards compatible with high volume surface mount assembly techniques. The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of these transistors yields extremely high performance products that can perform a multiplicity of tasks. The 1 emitter finger interdigitated geometry yields an extremely fast transistor with low operating currents and reasonable impedances. Optimized performance at 2.7 V makes these devices ideal for use in 9 MHz, 1.9 GHz, and 2. GHz battery operated systems as an LNA, gain stage, buffer, oscillator, or active mixer. Applications include cellular and PCS handsets as well as Industrial-Scientific-Medical systems. Typical amplifier designs at 9 MHz yield 1.3 db noise figures with 11 db or more associated gain at a 2.7 V, 1 ma bias. Moderate output power capability (+9 dbm P 1dB ) coupled with an excellent noise figure yields high dynamic range for a microcurrent device. High gain capability at 1 V, 1 ma makes these devices a good fit for 9 MHz pager applications. The AT-3 series bipolar transistors are fabricated using an optimized version of Avago s 1 GHz f T, 3 GHz f max Self-Aligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of these devices. Features High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation 9 MHz Performance: AT-3111:.9 db NF, 13 db G A AT-3133:.9 db NF, 11 db G A Characterized for End-Of-Life Battery Use (2.7 V) SOT-13 SMT Plastic Package Tape-And-Reel Packaging Option Available Lead-free Pin Connections and Package Marking EMITTER BASE BASE COLLECTOR 31x EMITTER SOT-13 (AT-3111) COLLECTOR 31x EMITTER Top View. Package Marking provides orientation and identification. "x" is the date code.
2 AT-3111, AT-3133 Absolute Maximum Ratings Symbol Parameter Units Absolute Maximum [1] V EBO Emitter-Base Voltage V 1.5 V CBO Collector-Base Voltage V 11 V CEO Collector-Emitter Voltage V 5.5 I C Collector Current ma P T Power Dissipation [2,3] mw 15 T j Junction Temperature C 15 T STG Storage Temperature C -65 to 15 Thermal Resistance [2] : θ jc = 55 C/W 1. Operation of this device above any one of these parameters may cause permanent damage. 2. T mounting surface = 25 C. 3. Derate at 1.2 mw/ C for T C > 67.5 C. Electrical Specifications, T A = 25 C AT-3111 AT-3133 Symbol Parameters and Test Conditions Units Min Typ Max Min Typ Max NF G A Noise Figure V CE = 2.7 V, I C = 1 ma f =.9 GHz db.9 [1] 1.2 [1].9 [2] 1.2 [2] Associated Gain V CE = 2.7 V, I C = 1 ma f =.9 GHz db 11 [1] 13 [1] 9 [2] 11 [2] h FE Forward Current V CE = 2.7 V Transfer Ratio I C = 1 ma I CBO Collector Cutoff Current V CB = 3 V µa I EBO Emitter Cutoff Current V EB = 1 V µa Test circuit B, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss =. db; output loss =. db. 2. Test circuit A, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss =. db; output loss =. db. 1 pf V BB W = 1 L = W = 1 L = V CC 25 Ω 1 pf W = 1 L = 1 W = 3 L = 1 W = 3 L = 1 W = 1 L = 5 TEST CIRCUIT BOARD MATL =.62" FR- (ε =.) DIMENSIONS IN MILS TEST CIRCUIT A: W = 2 L = 1 TEST CIRCUIT B: W = 2 L = 2 x 2 NOT TO SCALE Figure 1. Test Circuit for Noise Figure and Associated Gain. This Circuit is a Compromise Match Between Best Noise Figure, Best Gain, Stability, a Practical, Synthesizable Match, and a Circuit Capable of Matching Both the AT-35 and AT-31 Geometries. 2
3 Characterization Information, T A = 25 C AT-3111 Symbol Parameters and Test Conditions Units Typ Typ P 1dB G 1dB IP 3 Power at 1 db Gain Compression (opt tuning) V CE = 2.7 V, I C = 1 ma f =.9 GHz dbm 9 9 AT-3133 Gain at 1 db Gain Compression (opt tuning) V CE = 2.7 V, I C = 1 ma f =.9 GHz db Output Third Order Intercept Point, V CE = 2.7 V, I C = 1 ma (opt tuning) f =.9 GHz dbm 2 2 S 21 E 2 Gain in 5 Ω System; V CE = 2.7 V, I C = 1 ma f =.9 GHz db 1 9 C CB Collector-Base Capacitance V CB = 3V, f = 1 MHz pf NOISE FIGURE (db) NF MIN. AMPLIFIER NF 1 ma 1 ma Ga (db) ma 1 ma Ga (db) ma 1 ma Figure 2. AT-3111 and AT-3133 Minimum Noise Figure and Amplifier NF [1] vs. Frequency and Current at V ce = 2.7 V. Figure 3. AT-3111 Associated Gain at Optimum Noise Match vs. Frequency and Current at V ce = 2.7 V. Figure. AT-3133 Associated Gain at Optimum Noise Match vs. Frequency and Current at V ce = 2.7 V. 1 2 P 1dB (dbm) 6 1 ma 2 1 ma ma ma Figure 5. AT-3111 and AT-3133 Power at 1 db Gain Compression vs. Frequency and Current at V ce = 2.7 V. Figure 6. AT db Compressed Gain vs. Frequency and Current at V ce = 2.7 V. Figure 7. AT db Compressed Gain vs. Frequency and Current at V ce = 2.7 V. Note: 1. Amplifier NF represents the noise figure which can be expected in a real circuit representing reasonable reflection coefficients and including circuit losses. 3
4 AT-3111, AT-3133 Typical Performance ma P 1dB (dbm) ma ma ma Figure. AT-3111 and AT-3133 Power at 1 db Gain Compression vs. Frequency and Current at V ce = 5 V. Figure 9. AT db Compressed Gain vs. Frequency and Current at V ce = 5 V. Figure 1. AT db Compressed Gain vs. Frequency and Current at V ce = 5 V. 2 2 P 1dB (dbm) Figure 11. AT-3111 and AT-3133 Power at 1 db Gain Compression vs. Frequency and Current at V ce = 1 V. Figure. AT db Compressed Gain vs. Frequency and Current at V ce = 1 V. Figure 13. AT db Compressed Gain vs. Frequency and Current at V ce = 1 V. Ga (dbm) NF Ga NOISE FIGURE (db) Ga (dbm) Ga NF NOISE FIGURE (db) IM3 (dbc) IM3 (dbc) IM5 (dbc) IM7 (dbc) TEMPERATURE ( C) TEMPERATURE ( C) POWER PER TONE (dbm) Figure 1. AT-3111 Noise Figure and Associated Gain at V ce = 2.7 V, I c = 1 ma vs. Temperature in Test Circuit, Figure 1. (Circuit Losses De-embedded) Figure 15. AT-3133 Noise Figure and Associated Gain at V ce = 2.7 V, I c = 1 ma vs. Temperature in Test Circuit, Figure 1. (Circuit Losses De-embedded) Figure. AT-3111 and AT-3133 Intermodulation Products vs. Output Power at V ce = 2.7 V, I c = 1 ma, 9 MHz with Optimal Tuning.
5 AT-3111 Typical Scattering Parameters, V CE = 1 V, I C = 1 ma, Common Emitter, Z O = 5 Ω AT-3111 Typical Noise Parameters, Common Emitter, Z O = 5 Ω, 1 V, I C = 1 ma.5 [2] Matching constraints may make F min values associated with high values unachievable 2..5 GHz noise parameter values are extrapolated, not measured Figure 17. AT-3111 Gains vs. Frequency at V ce = 1 V, I c = 1 ma. AT-3133 Typical Scattering Parameters, V CE = 1 V, I C = 1 ma, Common Emitter, Z O = 5 Ω AT-3133 Typical Noise Parameters, Common Emitter, Z O = 5 Ω, 1 V, I C = 1 ma.5 [2] Matching constraints may make F min values associated with high values unachievable 2..5 GHz noise parameter values are extrapolated, not measured Figure 1. AT-3133 Gains vs. Frequency at V ce = 1 V, I c = 1 ma. 5
6 AT-3111 Typical Scattering Parameters, V CE = 2.7 V, I C = 1 ma, Common Emitter, Z O = 5 Ω AT-3111 Typical Noise Parameters, Common Emitter, Z O = 5 Ω, 2.7 V, I C = 1 ma.5 [2] Matching constraints may make F min values associated with high values unachievable 2..5 GHz noise parameter values are extrapolated, not measured. AT-3133 Typical Scattering Parameters, V CE = 2.7 V, I C = 1 ma, Common Emitter, Z O = 5 Ω Figure 19. AT-3111 Gains vs. Frequency at V ce = 2.7 V, I c = 1 ma. AT-3133 Typical Noise Parameters, Common Emitter, Z O = 5 Ω, 2.7 V, I C = 1 ma.5 [2] Matching constraints may make F min values associated with high values unachievable 2..5 GHz noise parameter values are extrapolated, not measured Figure 2. AT-3133 Gains vs. Frequency at V ce = 2.7 V, I c = 1 ma. 6
7 AT-3111 Typical Scattering Parameters, V CE = 2.7 V, I C = 1 ma, Common Emitter, Z O = 5 Ω AT-3111 Typical Noise Parameters, Common Emitter, Z O = 5 Ω, 2.7 V, I C = 1 ma.5 [2] Matching constraints may make F min values associated with high values unachievable 2..5 GHz noise parameter values are extrapolated, not measured. AT-3133 Typical Scattering Parameters, V CE = 2.7 V, I C = 1 ma, Common Emitter, Z O = 5 Ω Figure 21. AT-3111 Gains vs. Frequency at V ce = 2.7 V, I c = 1 ma. AT-3133 Typical Noise Parameters, Common Emitter, Z O = 5 Ω, 2.7 V, I C = 1 ma.5 [2] Matching constraints may make F min values associated with high values unachievable 2..5 GHz noise parameter values are extrapolated, not measured Figure 22. AT-3133 Gains vs. Frequency at V ce = 2.7 V, I c = 1 ma. 7
8 AT-3111 Typical Scattering Parameters, V CE = 5 V, I C = 1 ma, Common Emitter, Z O = 5 Ω AT-3111 Typical Noise Parameters, Common Emitter, Z O = 5 Ω, 5 V, I C = 1 ma.5 [2] Matching constraints may make F min values associated with high values unachievable 2..5 GHz noise parameter values are extrapolated, not measured Figure 23. AT-3111 Gains vs. Frequency at V ce = 5 V, I c = 1 ma. AT-3133 Typical Scattering Parameters, V CE = 5 V, I C = 1 ma, Common Emitter, Z O = 5 Ω AT-3133 Typical Noise Parameters, Common Emitter, Z O = 5 Ω, 5 V, I C = 1 ma.5 [2] Matching constraints may make F min values associated with high values unachievable 2..5 GHz noise parameter values are extrapolated, not measured Figure 2. AT-3133 Gains vs. Frequency at V ce = 5 V, I c = 1 ma.
9 AT-3111 Typical Scattering Parameters, V CE = 5 V, I C = 1 ma, Common Emitter, Z O = 5 Ω AT-3111 Typical Noise Parameters, Common Emitter, Z O = 5 Ω, 5 V, I C = 1 ma.5 [2] Matching constraints may make F min values associated with high values unachievable 2..5 GHz noise parameter values are extrapolated, not measured. AT-3133 Typical Scattering Parameters, V CE = 5 V, I C = 1 ma, Common Emitter, Z O = 5 Ω Figure 25. AT-3111 Gains vs. Frequency at V ce = 5 V, I c = 1 ma. AT-3133 Typical Noise Parameters, Common Emitter, Z O = 5 Ω, 5 V, I C = 1 ma -.5 [2] Matching constraints may make F min values associated with high values unacheivable 2..5 GHz noise parameter values are extrapolated, not measured Figure 26. AT-3133 Gains vs. Frequency at V ce = 5 V, I c = 1 ma. 9
10 Ordering Information Part Numbers No. of Devices Comments AT-3111-BLKG AT-3133-BLKG 1 Bulk AT-3111-TR1G AT-3133-TR1G 3 7" Reel AT-3111-TR2G AT-3133-TR2G 1 13" Reel Package Dimensions SOT-23 Plastic Package SOT-13 Plastic Package e2 e1 e2 e1 B1 E XXX E1 E XXX E1 e L L B C e B C A1 D XXX-package marking Drawings are not to scale A SYMBOL A A1 B C D E1 e e1 e2 E L DIMENSIONS (mm) MIN MAX A1 D XXX-package marking Drawings are not to scale A SYMBOL A A1 B B1 C D E1 e e1 e2 E L DIMENSIONS (mm) MIN MAX For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright Avago Technologies. All rights reserved. Obsoletes EN AV2-795EN - June 9, 29
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