Smart High-Side Power Switch for Industrial Applications One channel: 1 x 1 Ω

Similar documents
Operating temperature T a

Smart High-Side Power Switch BSP742RI PG-DSO8. AEC qualified Green product (RoHS compliant)

Application Note No. 097

ESD5V3U4RRS. Type Package Configuration Marking ESD5V3U4RRS SOT363 6 pins, uni-directional E8s

Industrial PROFET. Universal Application Board User s Manual

ESD8V0L... ESD8V0L1B-02LRH. Type Package Configuration Marking ESD8V0L1B-02EL

PROFET TM + Demoboard. Automotive Power. Smart High-Side Power Switch - Demoboard Description. Rev. 1.4,

TLS202B1. Demonstration Board Manual. Automotive Power. Demonstration Board Manual. Rev. 1.0,

Application Note No. 100

LOW EMI PWM INTELLIGENT POWER HIGH SIDE SWITCH

NovalithIC H-Bridge Demo Board

Absolute Pressure Sensor

Power Management & Drives. Application Note. February AN-EVAL 2x8-ISO1H815G-1

Scope: SW Installation: Start the Package PROG-KIT. Current. Page 1

Relaisdriving with HITFETs and SPIDERs

Application Note No. 104

Application Note TLE9252V. About this document. Application Note. Safety Recommendations Z8F

Application Note, V1.0, Jul AP08049 XC886/888CLM. Migration of Flash to ROM Device: Memory Protection Configurations.

SPI Protocol of the TLE941xy family

RF Power Product Selection Guide LDMOS Transistors and ICs

Chip Card & Security ICs SLE Intelligent 256-Byte EEPROM with Write Protection function and Programmable Security Code

Chip Card & Security ICs SLE Intelligent 1024 Byte EEPROM with Write Protection and Programmable Security Code

AP XC2000 & XE166 Families. Design Guidelines for XC2000 & XE166 Microcontroller Board Layout. Microcontrollers

Application Note, V 1.1, Apr AP08006 C868. Interfacing SPI/I2C Serial EEPROM with C868 Microcontroller. Microcontrollers. Never stop thinking.

Application Note, V 1.1, Feb AP DAP Connector. Microcontrollers

ZSPM4121. Under-Voltage Load Switch for Smart Battery Management. Datasheet. Brief Description. Features. Related IDT Smart Power Products

Application Note, V1.3, September 2008 AP XC2000/XE166 Family. Microcontrollers

Application Note, V1.0, Aug AP08064 XC866/886/888. Safeguarding the Microcontroller under Out-of-Spec Noise Conditions.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

TxD GND V CC. RxD WAKE V IO SCLK MISO. (Top-side x-ray view) SCLK INH

XE166 Family AP Application Note. Microcontrollers. X E D r i v e C a r d H a r d w a r e D e s c r i p t i o n Board REV.

ESDA8P80-1U1M. High power transient voltage suppressor. Description. Features. Applications

ESD7421, SZESD7421. ESD Protection Diodes. Micro Packaged Diodes for ESD Protection

EV-VND7040AJ. VND7040AJ evaluation board. Features. Applications

Application Note, V 1.0, April 2005 AP32086 EMC. Design Guideline for TC1796 Microcontroller Board Layout. Microcontrollers. Never stop thinking.

PESD5V0U2BT. 1. Product profile. Ultra low capacitance bidirectional double ESD protection diode. 1.1 General description. 1.

Sensor supply in bus mode

Design Guideline for TC1782 Microcontroller Board Layout

Dual back-to-back Zener diode

PESD5V0C1USF. in portable electronics, communication, consumer and computing devices.

Security & Chip Card ICs SLE 55R04. Intelligent 770 Byte EEPROM with Contactless Interface complying to ISO/IEC Type A and Security Logic

ESDA7P60-1U1M. High power transient voltage suppressor. Description. Features. Applications. Complies with the following standards:

TLT807B0EPV Demoboard

Design Guideline for TC1791 Microcontroller Board Layout

Application Note AN V1.3 August Module with adapted driver electronics

AOZ8234. Four-line TVS Diode

XC2000 Family AP Application Note. Microcontrollers. XC2236N Drive Card Description V1.0,

L05ESDL5V0D3-2 SOT-323. STAND-OFF VOLTAGE Volts POWER DISSIPATION - 50 WATTS ESD PROTECTION DEVICE

1 GHz wideband low-noise amplifier with bypass. The LNA is housed in a 6-pin SOT363 plastic SMD package.

AOZ8101. Ultra-Low Capacitance TVS Diode Array. General Description. Features. Applications. Typical Application

PUSB3FA0. 1 Product profile. ESD protection for ultra high-speed interfaces. 1.1 General description. 1.2 Features and benefits. 1.

PESD5V0X2UM. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

AOZ8882. Ultra-Low Capacitance TVS Diode Array. General Description. Features. Applications. Typical Application

Total power dissipation: 500 mw Small plastic package suitable for surface-mounted design Wide working voltage range Low differential resistance

AOZ8251. One-line Bidirectional TVS Diode. Features. General Description. Applications. Signal Line

SOT23-6L ESDALCL6-2SC6

HSP line ESD protection for high speed lines. Applications. Description. Features. µqfn 4 leads. Benefits. Complies with following standards

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

Bidirectional ESD protection diode

ESD7002, SZESD7002. Transient Voltage Suppressors. Low Capacitance ESD Protection Diode for High Speed Data Line

EMIF06-HSD04F3. 6-line low capacitance IPAD for micro-sd card with EMI filtering and ESD protection. Features. Application.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

The second generation of the HITFET family offers low RDS(on) and restart function in the SOT223 and D-Pak with low-input current

8-line IPAD low capacitance EMI filter and ESD protection in QFN package

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

AOZ8312. Low Capacitance 2.5 V TVS Diode. Features. General Description. Applications

MMBZ16VAL. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

Easy Kit Board Manual

Application Note No. 103

Bidirectional Symmetrical (BiSy) Low Capacitance, Single-Line ESD Protection Diode in LLP1006-2M

Bidirectional Symmetrical (BiSy) Single Line ESD Protection Diode in LLP1006-2L

PTVSxS1UR series. 1. Product profile. 400 W Transient Voltage Suppressor. 1.1 General description. 1.2 Features and benefits. 1.

Low forward voltage Ultra small SMD plastic package Low capacitance Flat leads: excellent coplanarity and improved thermal behavior

Features. Case Material: Molded Plastic, Green Molding Compound. Computers and Peripheral

Peak Pulse Current (tp = 8/20us) Ipp 2.5 A. Storage Temperature Range Tstg -55 to I PP = 1A, tp = 8/20µs

EMIF03-SIM06F3. 3-line IPAD, EMI filter including ESD protection. Description. Features. Application. Complies with the following standards:

PNP 500 ma, 50 V resistor-equipped transistor; R1 = 2.2 kω, R2 = open

Ultra Low Capacitance Bidirectional Symmetrical (BiSy) Single Line ESD Protection Diode in LLP1006-2M

ESDA25LY Automotive dual Transil array for ESD protection Features Applications Description Benefits

SMP75. Trisil for telecom equipment protection. Features. Description. Applications. Benefits

Dual H-Bridge shield. Dual H-Bridge shield - board user manual. Shield for DC motor control with IFX9202. About this document.

PMEG2010EH; PMEG2010EJ; PMEG2010ET

HSP051-4M10. 4-line ESD protection for high speed lines. Datasheet. Features. Applications. Description

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PESD18VV1BBSF. Very symmetrical bidirectional ESD protection diode

HSP061-4M10. 4-line ESD protection for high speed lines. Datasheet. Features. Applications. Description

EMIF01-SMIC01F2 IPAD. Single line EMI filter including ESD protection. Main application. Description. Benefits. Pin configuration (Bump side view)

Obsolete Product(s) - Obsolete Product(s)

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

EMIF02-SPK02F2. 2-line IPAD, EMI filter and ESD protection. Features. Application. Description. Complies with the following standards

PESD5V0L1BSF. Ultra low profile bidirectional low capacitance ESD protection diode

PESD5V0U1BA; PESD5V0U1BB; PESD5V0U1BL

3D Magnetic Sensor 2 Go - TLE493D-A2B6

Application Note - PCB Layout & PIN Behavior Assessment

ESDA17P100-1U2M. High power transient voltage suppressor. Description. Features. Applications

Features. Bottom View

PSpice Behavioral Model

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PART OBSOLETE NO ALTERNATE PART. Features W-WLB Bottom View

PESD24VF1BSF. Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit C d diode capacitance f = 1 MHz; V R = 0 V

Transcription:

Smart High-Side Power Switch for Industrial Applications One channel: 1 x 1 Ω ITS 4140N Features Current controlled input Product Summary Overvoltage protection V bbin(az) 62 V Operating voltage V Short circuit protection bb(on) 4,9...60 V On-state resistance R ON 1 Ω Current limitation Operating Temperature T a -30 +85 C Overload protection Overvoltage protection (including load dump) Switching inductive loads Clamp of negative voltage at output with inductive loads Thermal shutdown with restart ESD Protection PG-SOT223 4 Loss of GND and loss of V bb protection Very low standby current 3 2 Reverse battery protection 1 Improved electromagnetic compatibility (EMC) Application All types of resistive, inductive and capacitive loads in industrial applications Current controlled power switch for 12V, 24V and 42V DC industrial applications Driver for electromagnetic relays Signal amplifier General Description N channel vertical power MOSFET with charge pump and current controlled input, monolithically integrated in Smart SIPMOS technology. Providing embedded protection functions. Type Ordering code Package ITS 4140N SP000240073 PG-SOT223 Datasheet Page 1 Rev. 2.1, 2006-07-24

Block Diagram + V bb 2/4 Control Circuit OUT RIN Temperature Sensor 3 IN 1 R L GND Pin Symbol Function 1 IN Input, activates the power switch in case of connection to GND 2 Vbb Positive power supply voltage 3 OUT Output to the load 4 Vbb Positive power supply voltage Datasheet Page 2 Rev. 2.1, 2006-07-24

Maximum Ratings Parameter at Tj = 25 C unless otherwise specified Symbol Values Unit Supply voltage V bb 60 V Load current (Short circuit current, see page 5) I L self limited A Maximum current through the input pin (DC) I IN ±15 ma Junction temperature Operating temperature range Storage temperature range T j T a T stg +150-30 +85-40...+105 C Power dissipation 1) T a = 25 C Inductive load switch-off energy dissipation 2) Single pulse T j = 150 C, I L = 0.15A P tot 1.7 W E AS 1 J Load dump protection 3) V LoadDump 4) = V A + V S R L =2Ω, t d = 400ms, V IN = low or high I L = 150mA, V bb = 13.5V V bb = 27V V LoadDump 93.5 127 V Electrostatic discharge voltage (Human Body Model) According to ANSI EOS/ESD S5.1 1993 ESD STM5.1 1998 Input pin all other pins V ESD ±1 ±5 kv 1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for V bb connection. PCB is vertical without blown air. 2 Not subject to production test, specified by design 3 More details see EMC-Characteristics on page 7 4 V LoadDump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839. Datasheet Page 3 Rev. 2.1, 2006-07-24

Pin1 connected to GND Datasheet Page 4 Rev. 2.1, 2006-07-24

(see page 14) Datasheet Page 5 Rev. 2.1, 2006-07-24

Datasheet Page 6 Rev. 2.1, 2006-07-24

1 Supply voltage Vbb = 12 V instead of 13.5 V. Datasheet Page 7 Rev. 2.1, 2006-07-24

Datasheet Page 8 Rev. 2.1, 2006-07-24

Datasheet Page 9 Rev. 2.1, 2006-07-24

Datasheet Page 10 Rev. 2.1, 2006-07-24

E AS L V OUT ( CL) ( ) RL I L = V + + + bb VOUT ( CL) ln 1 I L R L RL VOUT ( CL) Datasheet Page 11 Rev. 2.1, 2006-07-24

Datasheet Page 12 Rev. 2.1, 2006-07-24

Datasheet Page 13 Rev. 2.1, 2006-07-24

Datasheet Page 14 Rev. 2.1, 2006-07-24

Datasheet Page 15 Rev. 2.1, 2006-07-24

Datasheet Page 16 Rev. 2.1, 2006-07-24

Datasheet Page 17 Rev. 2.1, 2006-07-24

Package and ordering code: ITS 4140N Type Ordering code Package ITS 4140N SP000240073 PG-SOT223 all dimensions in mm. Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2006. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Datasheet Page 18 Rev. 2.1, 2006-07-24