SDRAM DDR3 256MX8 ½ Density Device Technical Note

Similar documents
SDRAM DDR3 512MX8 ½ Density Device Technical Note

SDRAM DDR3 512MX8 ½ Density Device Technical Note

Features. DDR3 Registered DIMM Spec Sheet

Datasheet. Zetta 4Gbit DDR3L SDRAM. Features VDD=VDDQ=1.35V / V. Fully differential clock inputs (CK, CK ) operation

Features. DDR3 UDIMM w/o ECC Product Specification. Rev. 14 Dec. 2011

Features. DDR2 UDIMM with ECC Product Specification. Rev. 1.2 Aug. 2011

Features. DDR2 UDIMM w/o ECC Product Specification. Rev. 1.1 Aug. 2011

TwinDie 1.35V DDR3L SDRAM

TwinDie 1.35V DDR3L SDRAM

LE4ASS21PEH 16GB Unbuffered 2048Mx64 DDR4 SO-DIMM 1.2V Up to PC CL

4GB Unbuffered VLP DDR3 SDRAM DIMM with SPD

2GB DDR3 SDRAM SODIMM with SPD

Automotive DDR3L-RS SDRAM

2GB DDR3 SDRAM 72bit SO-DIMM

SC64G1A08. DDR3-1600F(CL7) 240-Pin XMP(ver 2.0) U-DIMM 1GB (128M x 64-bits)

Organization Row Address Column Address Bank Address Auto Precharge 256Mx4 (1GB) based module A0-A13 A0-A9 BA0-BA2 A10

Organization Row Address Column Address Bank Address Auto Precharge 128Mx8 (1GB) based module A0-A13 A0-A9 BA0-BA2 A10

IMM128M72D1SOD8AG (Die Revision F) 1GByte (128M x 72 Bit)

RML1531MH48D8F-667A. Ver1.0/Oct,05 1/8

IMM128M64D1DVD8AG (Die Revision F) 1GByte (128M x 64 Bit)

APPROVAL SHEET. Apacer Technology Inc. Apacer Technology Inc. CUSTOMER: 研華股份有限公司 APPROVED NO. : T0031 PCB PART NO. :

Datasheet. Zetta 4Gbit DDR4 SDRAM. Features. RTT_NOM switchable by ODT pin Asynchronous RESET pin supported

TwinDie 1.35V DDR3L-RS SDRAM

DDR3 SDRAM UDIMM MT8JTF12864AZ 1GB MT8JTF25664AZ 2GB MT8JTF51264AZ 4GB. Features. 1GB, 2GB, 4GB (x64, SR) 240-Pin DDR3 UDIMM.

APPROVAL SHEET. Apacer Technology Inc. Apacer Technology Inc. CUSTOMER: 研華股份有限公司 APPROVED NO. : T0026 PCB PART NO. :

IMM64M72D1SCS8AG (Die Revision D) 512MByte (64M x 72 Bit)

ADQVD1B16. DDR2-800+(CL4) 240-Pin EPP U-DIMM 2GB (256M x 64-bits)

IMM64M64D1SOD16AG (Die Revision D) 512MByte (64M x 64 Bit)

1.35V DDR3L SDRAM SODIMM

DDR3 SDRAM UDIMM MT8JTF12864AZ 1GB MT8JTF25664AZ 2GB. Features. 1GB, 2GB (x64, SR) 240-Pin DDR3 SDRAM UDIMM. Features

1.35V DDR3L SDRAM UDIMM

Module height: 30mm (1.18in) Note:

1.35V DDR3L SDRAM SODIMM

1.35V DDR3L SDRAM UDIMM

IMM64M64D1DVS8AG (Die Revision D) 512MByte (64M x 64 Bit)

1GB, 2GB (x64, SR) 240-Pin DDR3 UDIMM Features

D G28RA 128M x 64 HIGH PERFORMANCE PC UNBUFFERED DDR3 SDRAM SODIMM

IMME256M64D2DUD8AG (Die Revision E) 2GByte (256M x 64 Bit)

DDR3 SDRAM UDIMM MT4JTF6464AZ 512MB MT4JTF12864AZ 1GB. Features. 512MB, 1GB (x64, SR) 240-Pin DDR3 SDRAM UDIMM. Features

IMME256M64D2SOD8AG (Die Revision E) 2GByte (256M x 64 Bit)

Key Features 240-pin, dual in-line memory module (DIMM) ECC 1-bit error detection and correction. Registered inputs with one-clock delay.

DDR2 SDRAM UDIMM MT4HTF1664AY 128MB MT4HTF3264AY 256MB MT4HTF6464AY 512MB. Features. 128MB, 256MB, 512MB (x64, SR) 240-Pin DDR2 SDRAM UDIMM.

DDR2 SDRAM UDIMM MT9HTF6472AZ 512MB MT9HTF12872AZ 1GB MT9HTF25672AZ 2GB. Features. 512MB, 1GB, 2GB (x72, SR) 240-Pin DDR2 SDRAM UDIMM.

4GB Unbuffered DDR3 SDRAM SODIMM

DDR2 SDRAM SODIMM MT16HTF12864HZ 1GB MT16HTF25664HZ 2GB. Features. 1GB, 2GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM. Features

1.35V DDR3L SDRAM SODIMM

DDR2 SDRAM SODIMM MT8HTF12864HZ 1GB MT8HTF25664HZ 2GB. Features. 1GB, 2GB (x64, SR) 200-Pin DDR2 SDRAM SODIMM. Features

IMM64M72SDDUD8AG (Die Revision B) 512MByte (64M x 72 Bit)

Options. Data Rate (MT/s) CL = 3 CL = 2.5 CL = 2-40B PC PC PC

DDR2 SDRAM UDIMM MT8HTF12864AZ 1GB

DDR SDRAM UDIMM. Draft 9/ 9/ MT18VDDT6472A 512MB 1 MT18VDDT12872A 1GB For component data sheets, refer to Micron s Web site:

Micron Technology, Inc. reserves the right to change products or specifications without notice. jsf8c256x64hdz.pdf Rev. C 11/11 EN

DDR2 SDRAM UDIMM MT16HTF25664AZ 2GB MT16HTF51264AZ 4GB. Features. 2GB, 4GB (x64, DR) 240-Pin DDR2 SDRAM UDIMM. Features

DDR2 SDRAM UDIMM MT16HTF25664AZ 2GB MT16HTF51264AZ 4GB For component data sheets, refer to Micron s Web site:

512Mb NAND FLASH + 256Mb LPDDR SDRAM MCP Product

PC2-5300/PC DDR2 SDRAM Unbuffered DIMM Design Specification Revision 3.1 October 2008

1024MB DDR2 SDRAM SO-DIMM

DDR SDRAM UDIMM MT16VDDT6464A 512MB MT16VDDT12864A 1GB MT16VDDT25664A 2GB

DDR3 SDRAM SODIMM MT8JTF12864HY 1GB MT8JTF25664HY 2GB

DDR3 SDRAM UDIMM MT18JSF25672AZ 2GB MT18JSF51272AZ 4GB. Features. 2GB, 4GB (x72, ECC, DR) 240-Pin DDR3 SDRAM UDIMM. Features

DDR3 SDRAM VLP UDIMM MT9JDF25672AZ 2GB MT9JDF51272AZ 4GB. Features. 2GB, 4GB (x72, ECC, SR) 240-Pin DDR3 VLP UDIMM. Features

2GB Unbuffered DDR3 SDRAM DIMM

TwinDie 1.2V DDR4 SDRAM

DDR2 SDRAM UDIMM MT18HTF12872AZ 1GB MT18HTF25672AZ 2GB MT18HTF51272AZ 4GB. Features. 1GB, 2GB, 4GB (x72, ECC, DR) 240-Pin DDR2 SDRAM UDIMM.

1.35V DDR3L-RS SDRAM SODIMM

PC2-6400/PC2-5300/PC2-4200/PC Registered DIMM Design Specification Revision 3.40 August 2006

1. The values of t RCD and t RP for -335 modules show 18ns to align with industry specifications; actual DDR SDRAM device specifications are 15ns.

2GB DDR3 SDRAM UDIMM. RoHS Compliant. Product Specifications. January 15, Version 1.2. Apacer Technology Inc.

4GB ECC DDR3 1.35V SO-DIMM

TwinDie 1.35V DDR3L SDRAM

256MEGX72 (DDR2-SOCDIMM W/PLL)

DDR SDRAM UDIMM MT8VDDT3264A 256MB MT8VDDT6464A 512MB For component data sheets, refer to Micron s Web site:

VDIC SYNCHRONOUS DYNAMIC RAM VD1D2G32XS86XX2T7B USER MANUAL

DDR3 SDRAM SODIMM MT16JSF25664H 2GB For component data sheets, refer to Micron s Web site:

2GB 4GB 8GB Module Configuration 256 x M x x x 8 (16 components)

4GB DDR3 SDRAM SO-DIMM

VDIC SYNCHRONOUS DYNAMIC RAM VD1D1G16XS66XX1T7B USER MANUAL

DDR SDRAM SODIMM MT8VDDT1664H 128MB 1. MT8VDDT3264H 256MB 2 MT8VDDT6464H 512MB For component data sheets, refer to Micron s Web site:

MT51J256M32 16 Meg x 32 I/O x 16 banks, 32 Meg x 16 I/O x 16 banks. Options 1. Note:

1.35V DDR3L SDRAM UDIMM

DDR SDRAM SODIMM MT16VDDF6464H 512MB MT16VDDF12864H 1GB

Address Summary Table: 1GB 2GB 4GB Module Configuration 128M x M x M x 64

Micron Technology, Inc. reserves the right to change products or specifications without notice. jdf18c512_1gx72az.pdf - Rev.

1.35V DDR3L SDRAM SODIMM

1.35V DDR3 SDRAM SODIMM

VDIC SYNCHRONOUS DYNAMIC RAM VD1D8G08XS66XX8T7B-Ⅱ USER MANUAL. Version :A5

ADATA Technology Corp. DDR3-1333(CL9) 240-Pin R-DIMM 8GB (1024M x 72-bit)

DDR3 SDRAM UDIMM MT9JSF12872AZ 1GB MT9JSF25672AZ 2GB MT9JSF51272AZ 4GB. Features. 1GB, 2GB, 4GB (x72, ECC, SR) 240-Pin DDR3 SDRAM UDIMM.

512MB DDR2 SDRAM SO-DIMM

2GB ECC DDR3 1.35V SO-DIMM

1.35V DDR3L SDRAM UDIMM

Note: Micron Technology, Inc. reserves the right to change products or specifications without notice. jsf36c2gx72pz.pdf - Rev.

APPROVAL SHEET. Apacer Technology Inc. Apacer Technology Inc. CUSTOMER: 研華股份有限公司 APPROVED NO. : T0007 PCB PART NO. :

DDR3(L) 4GB / 8GB SODIMM

DDR3 SDRAM Mini-RDIMM

4GB DDR3 SDRAM SO-DIMM

2GB DDR3 1.35V SO-DIMM

DDR3 SDRAM LRDIMM MT72JSZS4G72LZ 32GB. Features. 32GB (x72, ECC, QR) 240-Pin DDR3 LRDIMM. Features. Figure 1: 240-Pin LRDIMM (MO-269 RC/C)

DDR4 OverClock UDIMM Module

DDR4 OverClock UDIMM Module

Transcription:

SDRAM DDR3 256MX8 ½ Density Device Technical Note Introduction This technical note provides an overview of how the SGG128M8V79DG8GQF-15E DDR3 SDRAM device is configured and tested as a 1Gb device. This deivce is internaly configured as a standard 128MX8 JEDEC standard device. Addressing Parameter 2Gb ½ Density Device Configuration 128M X8 2Gb Device Configuration for reference only 256M X 8 Configuration 16MEG X 8 X 8 Banks 32MEG X 8 X 8 banks Refresh count 8K 8K Row addressing 16K A0-A13 32K A0-A14 Bank addressing 8: BA0-BA2 8: BAO-BA2 Column addressing 1K A0-A9 1K A0-A9 1 Spectek reserves the right to change products

Spectek Component Part Options and Designations Options Spectek Memory Designation SGG Spectek Component sales Component depth 128MEG Component width x8 Design ID V79D (1/2 density device) Operating voltage 1.5V Refresh 8: 8K Component package type: GQ: 78/117B 8x10.5MM Material type F: LEAD-FREE Device speed -15E 1333MHz 9-9-9-1.5V Pin Descriptions Symbol Type Description A0-A13 Input Address inputs: Provide the row address for ACTIVE commands, and the column address and auto precharge bit (A10) for READ/WRITE commands, to select one location out of memory array in the respective bank. A10 sampled during a PRECHARGE command determines whether the PRECHARGE applies to one bank (A10 LOW, bank selected by BA[2:0]) or all banks (A10 HIGH). The address inputs also provide the op-code during a LOAD MODE command. Address inputs are referenced to Vrefca. A12: When enable in the mode register (MR), A12 is sampled during READ adn WRTIE commands to determne whether burst chop (on-the-fly) will be perfrmed (HIGH = BL8 or no burst chop, LOW = BC4) BA0-BA2 Input Bank address inputs: Define the device bank to which an ACTIVE, READ, WRITE, or PRECHARGE command is being applied. BA[2:0] define which mode register (MRO, MR1, MR2 or MR3) is loaded during the LOAD MODE command.ba[2:0] are reference to Vrefca CKx CKx# Input Clock: Differential clock inputs. All control command and address input signals are sampled on the crossing of the positive edge of CK and the negative edge of CK#. Output data strobe (DQS,DSS#) is referenced to crossings of CK and CK#. CKEx Input Clock enable: Enables (registered HIGH) and disables (registered LOW) internal circuitry and clocks on the DRAM. CS# Input Chip select: CS# enables (registered LOW) and disables (registered HIGH) the command decoder. All commands are masked when CS# is registered HIGH. CS# provides for external bank selection on systems with multiple ranks. CS# is considered part of the command code. DM Input Data mask (x8 devices only): DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH, along with the input data during a write access. Although DM pins are input-only, DM loading is designed to match that of the DQ and DQS pins. ODT Input On-die termination: Enables (registered HIGH) and disables (register LOW) termination resistance internal to the DDR3 SDRAM. When enabled in normal operation, ODT is only applied to the following pins: DQ, DQS. DQS#, DM RAS#, CAS#, WE# Input and CB. The ODT input will be ignored if disabled via the LOAD MODE command. Command inputs: RAS#, CAS# and WE# (along with CS#) define the command being entered. RESET# Input Reset: RESET# is an active LOW CMOS input referenced to Vss. The RESET# input receiver is a CMOS input defined as a rail-to rail signal wiht DC HIGH >0.8 x Vdd and DC LOW < 0.2X Vddq. RESET# asserion and deseerion are asynchronous. DQ0- DQ7 DQS DQS# I/O I/O Data input/output: Bidirectional data bus. Data strobe: Differential data strobes. Output with read data: edge-aligned with read data: input with read data: input with write data: center-aligned with write data 2 Spectek reserves the right to change products

Pin Descriptions - Continued) Symbol Type Description TDQS TDQSx# Output Termination data strobe (x8 devices only) When TDQS is enabled, DM is disabled and TDQS and TDQS# provide termination resistance:. Vdd Supply Power Supply: 1.5V +0.1V. VddQ Supply DQ Power Supply: 1.5V +0.1V Isolated on the device for improved noise immunity. Vddrefca Supply Reference voltage for control, command and address: Vrefca must be maintained at all times (including self refresh) for proper device operation. Vrefdq Supply Reference voltage for data: Vrefdq must be maintained at all times (excluding self refresh) for proper device operation. Vss Supply Ground VssQ Supply DQ ground: Isolated on the device for improved noise immunity. ZQ Reference External reference ball for output drive calibration: This ball is tied to an external 240 ohm resistor (RZQ) which is tied to Vssq. NC - No connect: These pins are not connected on the module NF - No function: These pins are connected within the module, but provide no functionality. 3 Spectek reserves the right to change products

Ball Assignments and Descriptions 78 Ball FBGA X8 (Top View) 4 Spectek reserves the right to change products

78 Ball FBGA Package 8MM X 10.5MM x8 5 Spectek reserves the right to change products