Comparison of Nine SDRAM Devices. Focused Technology Review

Similar documents
Samsung Exynos 5250 Dual ARM Cortex -A15 Application Processor

Texas Instruments OMAP4460BCBS Application Processor

Samsung S6E8AA0A01 Display Driver IC (DDI) Extracted from a Samsung Galaxy S III

Broadcom BCM4335 5G Wi-Fi ac Combo Wireless Chip

Texas Instruments OMAP4430FCBS (with Die Markings F781821F) Application Processor

Qualcomm WCN3660/WCN3680 Wireless Combo Chips

Samsung S5PC210 Exynos 4210 Application Processor

Sigma Designs SMP8642 Secure Media Processor

Micron Technology. MT41K512M8RH Gb DDR3 SDRAM. Circuit Analysis DQ, VDDQ, and VREFDQ I/O Pads

Atmel MXT540E Touch Screen Controller

Qualcomm APQ8064 Avenger Snapdragon S4 Pro Application Processor

Motorola Mobility T6VP0XBG-0001 Baseband Processor With FVP0 Die Markings From the Motorola Mobility DROID RAZR and BIONIC Smartphones

NXP Semiconductors. HTRC110 HITAG Read/Write IC. Full Circuit Analysis

RF Micro Devices RF6260 Power Amplifier Module from the Samsung Galaxy S II Smartphone

Sample Table of Contents

STMicroelectronics STM32F103ZET6 32 Bit MCU. Advanced Functional Analysis

LG Electronics LG4945 LCD Display Driver IC

STMicroelectronics STM32F103ZET6 32 Bit MCU Embedded NOR Flash

Texas Instruments. BQ2025 Single Wire Serial Interface for the Apple Lightning Cable. Full Circuit Analysis

Sony ICX098BL ¼ Inch Optical Format 5.6 µm Pixel Size CCD Image Sensor

Goodix BD10239A (ASIC Die from the GT1151) Touch Screen Controller ASIC

STMicroelectronics L9959T Dual PMOS High-Side H-Bridge

SanDisk Flash Memory Controller. Partial Circuit Analysis

Numonyx JSPCM128A00B85ES 128 Mbit Phase Change Memory 90 nm BiCMOS PCM Process

NVIDIA Tegra T20-H-A2 Application Processor TSMC 40 nm Low Power CMOS Process

Apple iphone 6s Fingerprint Sensor

QUALCOMM MSM6275 Chipset

Texas Instruments. XIO2000AI PCI Express to PCI Bus Translation Bridge. PCI Express Interface Circuit Analysis

Freescale. MCZ33905D5EK SBC Gen2 with CAN High Speed and LIN Interface. Circuit Analysis of Power Management Unit, CAN Interface, and LIN Block

Marvell. 88SE9123-NAA2 SATA 6 Gb/s RAID Controller. SATA 3.0 Interface Analog Macro Circuit Analysis

Luxtera PN Silicon CMOS Photonic Chip Freescale 130 nm SOI CMOS Process

Qualcomm MSM8974AC Snapdragon 801 Application Processor

G 32 Gb NAND Flash Multichip Package Controller Die Internal Voltage Converter and Oscillator

Sharp NC µm Pixel CCD Image Sensor

Memjet ML Printhead from the RapidX1 Color Label Printer

IBM 43E7488 POWER6 Microprocessor from the IBM System 8203-E4A Server

Nan Ya NT5DS32M8BT-6K 256 Mbit DDR SDRAM Structural Analysis

Texas Instruments TMX320TCI6488ZUNV Baseband Processor System on a Chip

Samsung Exynos 5433 Application Processor

AltaSens A5262-4T 4.5 Megapixel CMOS Image Sensor 0.18 µm IBM Process

Broadcom BCM7405 HD Video/Audio System-on-Chip (SoC)

Samsung K9GAG08U0M-PCB0 16 Gbit Multi-Level Cell (MLC) 51 nm Process Technology NAND Flash Memory

Nokia N90 (Toshiba ET8EA3-AS) 2.0 Megapixel CMOS Image Sensor Process Review

Sharp NC Mp, 1.66 µm Pixel Size CCD Image Sensor

Layout Analysis Embedded Memory

Texas Instruments S W Digital Micromirror Device

Canon Digic II CH Digital Image Processor Structural Analysis

Samsung SGH-I987 Galaxy Tablet 7.0. Teardown Report

Layout Analysis I/O. Analysis from an HD Video/Audio SoC

Sony IMX214 Second Generation 13 Mp Exmor RS Stacked BSI CIS with SME-HDR

Matsushita MN2DS0015 System on a Chip for DVD Players 65 nm CMOS Process Structural Analysis

Sony ICX098BL ¼ Inch Optical Format 5.6 µm Pixel Size CCD Image Sensor

Xilinx XC4VLX25-FF668AGQ FPGA. IOB Circuit Analysis

Panasonic Mp, 4.4 µm Pixel Size LiveMOS Image Sensor from Panasonic LUMIX DMC-G1 Micro Four Thirds Digital Interchangeable Lens Camera

Micron MT54V512H18EF-10 9Mb QDR SRAM Circuit Analysis

Texas Instruments TMS320F2812GHHA DSP Embedded Flash Macro Partial Circuit Analysis

Infineon HYB39S128160CT M SDRAM Circuit Analysis

Hewlett-Packard HDCS-2000 CMOS Image Sensor Circuit Analysis

Mosel Vitelic (IBM-Siemens) V53C181608K60 1Mx16 CMOS EDO DRAM

LG Semicon GM71C17400BJ6 16M DRAM Circuit Analysis Report

Memory in Digital Systems

MEMORIES. Memories. EEC 116, B. Baas 3

Memory in Digital Systems

Samsung Memory Card/UFD Authentication Utility

ESS Utility Android App User Guide

Intel Unite Plugin Guide for VDO360 Clearwater

3M Sun Control Window Films. Prestige Series. Prestige. Clearly Superior Window Films. for Clearly Superior Homes

Evaluation Board User Guide UG-302

Infrastructure and Asset Integrity Accreditation Publications Index. July 2018

USB3740 Evaluation Board User Manual

Inside Today s Hot Products: What Teardowns Can Reveal. Dick James, Senior Technology Analyst, Chipworks

AN S1401 Using BlueMod+S as Beacon

HYDRA-X EH-PROTOx-1 Heads

INCLUDING MEDICAL ADVICE DISCLAIMER

Unleashing the Power of Embedded DRAM

SOUTH AFRICAN NATIONAL STANDARD

Manufacturer Model Number Size Type Speed Rank DRAM Part Number Vendor Organization

AUTM Royalty and Deals Database Preview

AN USB332x Transceiver Layout Guidelines

GE865-JF2 Interface Application Note NT10067A Rev

RE866 Interface User Guide

1.1. This User Agreement (hereinafter referred to as the Agreement) refers to the website located at

DK-DEV-GW2AR18. User Guide

WM DS28-EV1-REV2 Schematic and Layout WOLFSON DEVICE(S):

DEMO MANUAL DC2645A LTC MHz to 9GHz High Linearity I/Q Demodulator with Wideband IF Amplifier DESCRIPTION BOARD PHOTO

WM DS28-EV2-REV1 Schematic and Layout

QUALCOMM Reports First Quarter Results Revenues $941 Million, $.65 EPS

IETF TRUST. Legal Provisions Relating to IETF Documents. Approved November 6, Effective Date: November 10, 2008

AN2667 Application note

Memory Design I. Array-Structured Memory Architecture. Professor Chris H. Kim. Dept. of ECE.

WM CS20-M-REV2

WM DT16-EV1. Customer Standalone Board WOLFSON DEVICE(S): DATE: August 2009

Avaya Client Applications Configurator User Guide

WM8805_6152_DS28_EV1_REV3 Schematic and Layout. WM8805_6152_DS28_EV1_REV3 Schematic and Layout. Customer Information 1 of 18 June 2007, Rev 3.

Samsung In-App Purchase v3.0 Development Preparations

Professional Service Partners. Advanced Signal Processing Products

WM DT20-EV1. Customer Standalone Board WOLFSON DEVICE(S): DATE: September 2009

AN2470 Application note TS4871 low voltage audio power amplifier Evaluation board user guidelines Features Description

MultiTech Conduit AEP + RE866

PS25405 EPIC sensor, non-contact, low gain Datasheet

Transcription:

Comparison of Nine SDRAM Devices 1891 Robertson Road, Suite 500, Ottawa, ON K2H 5B7 Canada Tel: 613.829.0414 www.chipworks.com

Some of the information in this report may be covered by patents, mask and/or copyright protection. This report should not be taken as an inducement to infringe on these rights. Chipworks Inc. 2013 all rights reserved. Chipworks and the Chipworks logo are registered trademarks of Chipworks Inc. This report is provided exclusively for the use of the purchasing organization. It can be freely copied and distributed within the purchasing organization, conditional upon the accompanying Chipworks accreditation remaining attached. Distribution of the entire report outside of the purchasing organization is strictly forbidden. The use of portions of the document for the support of the purchasing organization's corporate interest (e.g., licensing or marketing activities) is permitted, as defined by the fair use provisions of the copyright act. Accreditation to Chipworks must be attached to any portion of the reproduced information. FTR-1312-901 24836DYMC Revision 1.0 Published: December 10, 2013 Revision 2.0 Published: December 23, 2013

Table of Contents 1 Overview 1.1 List of Figures 1.2 List of Tables 1.3 Introduction 1.4 Device Process Feature Comparison 1.5 Device Circuit Feature Summary 2 Micron MT41K512M8RH-125 2.1 Introduction 2.2 Device Summary 2.3 Package 2.4 Die 2.5 Process Features 2.6 Circuit Features 3 Micron MT41J128M16HA-15E 3.1 Introduction 3.2 Device Summary 3.3 Package 3.4 Die 3.5 Process Features 3.6 Circuit Features 4 Micron MT47H128M8CF-3 4.1 Introduction 4.2 Device Summary 4.3 Package 4.4 Die 4.5 Process Features 4.6 Circuit Features

5 Hynix H5TQ2G43BFR-H9C 5.1 Introduction 5.2 Device Summary 5.3 Package 5.4 Die 5.5 Process Features 5.6 Circuit Features 6 Hynix H5TC2G83CFR-H9R 6.1 Introduction 6.2 Device Summary 6.3 Package 6.4 Die 6.5 Process Features 6.6 Circuit Features 7 Hynix H9TKNNN8JDAR-HRNGM 7.1 Introduction 7.2 Device Summary 7.3 Package 7.4 Die 7.5 Process Features 7.6 Circuit Features 8 Samsung K4B1G0846F-HCF8 8.1 Introduction 8.2 Device Summary 8.3 Package 8.4 Die 8.5 Process Features 8.6 Circuit Features 9 Samsung K4B4G0846C-BCK0 9.1 Introduction 9.2 Device Summary 9.3 Package 9.4 Die 9.5 Process Features 9.6 Circuit Features

10 Samsung K3PE7E700M 10.1 Introduction 10.2 Device Summary 10.3 Package 10.4 Die 10.5 Process Features 10.6 Circuit Features 11 Statement of Measurement Uncertainty and Scope Variation About Chipworks

1-1 1 Overview 1.1 List of Figures Figure 2.3.2 Micron MT41K512M8RH-125 Bottom Package Photograph Figure 2.3.3 Micron MT41K512M8RH-125 Package X-Ray Plan View Figure 2.3.4 Micron MT41K512M8RH-125 Package X-Ray Side-View Figure 2.4.1 Micron MT41K512M8RH-125 Die Photograph Figure 2.4.2 Micron MT41K512M8RH-125 Die Markings Figure 2.4.3 Micron MT41K512M8RH-125 Die Photograph Delayered to Polysilicon Figure 2.5.1 Micron MT41K512M8RH-125 Memory Array Capacitor Size Figure 2.5.2 Micron MT41K512M8RH-125 Bitline Pitch Figure 2.5.3 Micron MT41K512M8RH-125 Wordline Pitch Figure 2.6.1 Micron MT41K512M8RH-125 Die Photograph Pinout Figure 2.6.2 Micron MT41K512M8RH-125 Die Photograph Functional Blocks Figure 2.6.3 Micron MT41K512M8RH-125 Memory Array Close-Up Figure 2.6.4 Micron MT41K512M8RH-125 Sense Amplifier Close-Up Figure 3.3.1 Micron MT41J128M16HA-15E Top Package Photograph Figure 3.3.2 Micron MT41J128M16HA-15E Bottom Package Photograph Figure 3.3.3 Micron MT41J128M16HA-15E Package X-Ray Plan View Figure 3.3.4 Micron MT41J128M16HA-15E Package X-Ray Side View Figure 3.4.1 Micron MT41J128M16HA-15E Die Photograph Figure 3.4.2 Micron MT41J128M16HA-15E Die Markings Figure 3.4.3 Micron MT41J128M16HA-15E Die Photograph Delayered to Metal 1 Figure 3.5.1 Micron MT41J128M16HA-15E Memory Array Capacitor Size Figure 3.5.2 Micron MT41J128M16HA-15E Bitline Pitch Figure 3.5.3 Micron MT41J128M16HA-15E Wordline Pitch Figure 3.6.1 Micron MT41J128M16HA-15E Die Photograph Pinout Figure 3.6.2 Micron MT41J128M16HA-15E Die Photograph Functional Blocks Figure 3.6.3 Micron MT41J128M16HA-15E Memory Array Close-Up Figure 3.6.4 Micron MT41J128M16HA-15E Sense Amplifier Close-Up Figure 4.3.1 Micron MT47H128M8CF-3 Top Package Photograph Figure 4.3.2 Micron MT47H128M8CF-3 Bottom Package Photograph Figure 4.3.3 Micron MT47H128M8CF-3 Package X-Ray Plan View Figure 4.4.1 Micron MT47H128M8CF-3 Die Photograph Figure 4.4.2 Micron MT47H128M8CF-3 Die Markings Figure 4.4.3 Micron MT47H128M8CF-3 Die Photograph Delayered to Metal 1 Figure 4.5.1 Micron MT47H128M8CF-3 Memory Array Capacitor Size Figure 4.5.2 Micron MT47H128M8CF-3 Bitline Pitch Figure 4.5.3 Micron MT47H128M8CF-3 Wordline Pitch Figure 4.6.1 Micron MT47H128M8CF-3 Die Photograph Pinout Figure 4.6.2 Micron MT47H128M8CF-3 Die Photograph Functional Blocks

1-2 Figure 4.6.3 Micron MT47H128M8CF-3 Memory Array Close-Up Figure 4.6.4 Micron MT47H128M8CF-3 Sense Amplifier Close-Up Figure 5.3.1 Hynix H5TQ2G43BFR-H9C Top Package Photograph Figure 5.3.2 Hynix H5TQ2G43BFR-H9C Bottom Package Photograph Figure 5.3.3 Hynix H5TQ2G43BFR-H9C Package X-Ray Plan View Figure 5.3.4 Hynix H5TQ2G43BFR-H9C Package X-Ray Side View Figure 5.4.1 Hynix H5TQ2G43BFR-H9C Die Photograph Figure 5.4.2 Hynix H5TQ2G43BFR-H9C Die Markings Figure 5.4.3 Hynix H5TQ2G43BFR-H9C Die Photograph Delayered to Metal 1 Figure 5.5.1 Hynix H5TQ2G43BFR-H9C Memory Array Capacitor Size Figure 5.5.2 Hynix H5TQ2G43BFR-H9C Bitline Pitch Figure 5.5.3 Hynix H5TQ2G43BFR-H9C Wordline Pitch Figure 5.6.1 Hynix H5TQ2G43BFR-H9CDie Photograph Pinout Figure 5.6.2 Hynix H5TQ2G43BFR-H9C Die Photograph Functional Blocks Figure 5.6.3 Hynix H5TQ2G43BFR-H9C Memory Array Close-Up Figure 5.6.4 Hynix H5TQ2G43BFR-H9C Sense Amplifier Close-Up Figure 6.3.1 Hynix H5TC2G83CFR-H9R Top Package Photograph Figure 6.3.2 Hynix H5TC2G83CFR-H9R Bottom Package Photograph Figure 6.3.3 Hynix H5TC2G83CFR-H9R Package X-Ray Plan View Figure 6.3.4 Hynix H5TC2G83CFR-H9R Package X-Ray Side View Figure 6.4.1 Hynix H5TC2G83CFR-H9R Die Photograph Figure 6.4.2 Hynix H5TC2G83CFR-H9R Die Markings Figure 6.4.3 Hynix H5TC2G83CFR-H9R Die Photograph Delayered to Metal 1 Figure 6.5.1 Hynix H5TC2G83CFR-H9R Memory Array Capacitor Size Figure 6.5.2 Hynix H5TC2G83CFR-H9R Bitline Pitch Figure 6.5.3 Hynix H5TC2G83CFR-H9R Wordline Pitch Figure 6.6.1 Hynix H5TC2G83CFR-H9R Die Photograph Pinout Figure 6.6.2 Hynix H5TC2G83CFR-H9R Die Photograph Functional Blocks Figure 6.6.3 Hynix H5TC2G83CFR-H9R Memory Array Close-Up Figure 6.6.4 Hynix H5TC2G83CFR-H9R Sense Amplifier Close-Up Figure 7.3.1 Hynix H9TKNNN8JDAR-HRNGM Top Package Photograph Figure 7.3.2 Hynix H9TKNNN8JDAR-HRNGM Bottom Package Photograph Figure 7.3.3 Hynix H9TKNNN8JDAR-HRNGM Package X-Ray Plan View Figure 7.3.4 Hynix H9TKNNN8JDAR-HRNGM Package X-Ray Side View Figure 7.4.1 Hynix H9TKNNN8JDAR-HRNGM Die Photograph Figure 7.4.2 Hynix H9TKNNN8JDAR-HRNGM Die Markings Figure 7.4.3 Hynix H9TKNNN8JDAR-HRNGM Die Photograph Delayered to Metal 1 Figure 7.5.1 Hynix H9TKNNN8JDAR-HRNGM Memory Array Capacitor Size Figure 7.5.2 Hynix H9TKNNN8JDAR-HRNGM Bitline Pitch Figure 7.5.3 Hynix H9TKNNN8JDAR-HRNGM Wordline Pitch Figure 7.6.1 Hynix H9TKNNN8JDAR-HRNGM Die Photograph Functional Blocks Figure 7.6.2 Hynix H9TKNNN8JDAR-HRNGM Memory Array Close-Up

1-3 Figure 7.6.3 Hynix H9TKNNN8JDAR-HRNGM Sense Amplifier Close-Up Figure 8.3.1 Samsung K4B1G0846F-HCF8 Top Package Photograph Figure 8.3.2 Samsung K4B1G0846F-HCF8 Bottom Package Photograph Figure 8.3.3 Samsung K4B1G0846F-HCF8 Package X-Ray Plan View Figure 8.4.1 Samsung K4B1G0846F-HCF8 Die Photograph Figure 8.4.2 Samsung K4B1G0846F-HCF8 Die Markings Figure 8.4.3 Samsung K4B1G0846F-HCF8 Die Photograph Delayered to Polysilicon Figure 8.5.1 Samsung K4B1G0846F-HCF8 Memory Array Capacitor Size Figure 8.5.2 Samsung K4B1G0846F-HCF8 Bitline Pitch Figure 8.5.3 Samsung K4B1G0846F-HCF8 Wordline Pitch Figure 8.6.1 Samsung K4B1G0846F-HCF8 Die Photograph Pinout Figure 8.6.2 Samsung K4B1G0846F-HCF8 Die Photograph Functional Blocks Figure 8.6.3 Samsung K4B1G0846F-HCF8 Memory Array Close-Up Figure 8.6.4 Samsung K4B1G0846F-HCF8 Sense Amplifier Close-Up Figure 9.3.1 Samsung K4B4G0846C-BCK0 Top Package Photograph Figure 9.3.2 Samsung K4B4G0846C-BCK0 Bottom Package Photograph Figure 9.3.3 Samsung K4B4G0846C-BCK0 Package X-Ray Plan View Figure 9.3.4 Samsung K4B4G0846C-BCK0 Package X-Ray Side View Figure 9.4.1 Samsung K4B4G0846C-BCK0 Die Photograph Figure 9.4.2 Samsung K4B4G0846C-BCK0 Die Markings Figure 9.4.3 Samsung K4B4G0846C-BCK0 Die Photograph Delayered to Metal 1 Figure 9.5.1 Samsung K4B4G0846C-BCK0 Memory Array Capacitor Size Figure 9.5.2 Samsung K4B4G0846C-BCK0 Bitline Pitch Figure 9.5.3 Samsung K4B4G0846C-BCK0 Wordline Pitch Figure 9.6.1 Samsung K4B4G0846C-BCK0 Die Photograph Functional Blocks Figure 9.6.2 Samsung K4B4G0846C-BCK0 Memory Array Close-Up Figure 9.6.3 Samsung K4B4G0846C-BCK0 Sense Amplifier Close-Up Figure 10.3.1 Samsung K3PE7E700M Top Package Photograph Figure 10.3.2 Samsung K3PE7E700M Bottom Package Photograph Figure 10.3.3 Samsung K3PE7E700M Package X-Ray Plan View Figure 10.3.4 Samsung K3PE7E700M Package X-Ray Side View Figure 10.4.1 Samsung K3PE7E700M Die Photograph Figure 10.4.2 Samsung K3PE7E700M Die Markings Figure 10.4.3 Samsung K3PE7E700M Die Photograph Delayered to Metal 1 Figure 10.5.1 Samsung K3PE7E700M Memory Array Capacitor Size Figure 10.5.2 Samsung K3PE7E700M Bitline Pitch Figure 10.5.3 Samsung K3PE7E700M Wordline Pitch Figure 10.6.1 Samsung K3PE7E700M Die Photograph Functional Blocks Figure 10.6.2 Samsung K3PE7E700M Memory Array Close-Up Figure 10.6.3 Samsung K3PE7E700M Sense Amplifier Close-Up

1-4 1.2 List of Tables Table 1.4.1 Micron Die Summary Table 1.4.2 Hynix Die Summary Table 1.4.3 Samsung Die Summary Table 1.5.1 Micron Circuit Features Summary Table 1.5.2 Hynix Circuit Features Summary Table 1.5.3 Samsung Circuit Features Summary Table 2.2.1 Micron MT41K512M8RH-125 Summary Table 3.2.1 Micron MT41J128M16HA-15E Summary Table 4.2.1 Micron MT47H128M8CF-3 Summary Table 5.2.1 Hynix H5TQ2G43BFR-H9C Summary Table 6.2.1 Hynix H5TC2G83CFR-H9R Summary Table 7.2.1 Hynix H9TKNNN8JDAR-HRNGM Summary Table 8.2.1 Samsung K4B1G086F-HCF8 Summary Table 9.2.1 Samsung K4B4G0846C-BCK0 Summary Table 10.2.1 Samsung K3PE7E700M Summary

About Chipworks Chipworks is the recognized leader in reverse engineering and patent infringement analysis of semiconductors and electronic systems. The company s ability to analyze the circuitry and physical composition of these systems makes them a key partner in the success of the world s largest semiconductor and microelectronics companies. Intellectual property groups and their legal counsel trust Chipworks for success in patent licensing and litigation earning hundreds of millions of dollars in patent licenses, and saving as much in royalty payments. Research & Development and Product Management rely on Chipworks for success in new product design and launch, saving hundreds of millions of dollars in design, and earning even more through superior product design and faster launches. Contact Chipworks To find out more information on this report, or any other reports in our library, please contact Chipworks at 1-613-829-0414. Chipworks 1891 Robertson Road, Suite 500 Ottawa, Ontario K2H 5B7 Canada T 1-613-829-0414 F 1-613-829-0515 Web site: www.chipworks.com Email: info@chipworks.com Please send any feedback to feedback@chipworks.com